A wake-up device that can be embedded in a CMOS image sensor array
CN116389896BActive Publication Date: 2025-06-06BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
Patent Information
- Application Number
- CN202310181094.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-02-16
- Publication Date
- 2025-06-06
- Estimated Expiration
- 2043-02-16
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Figure CN116389896B_ABST
Abstract
The present invention discloses a wake-up device that can be embedded in a CMOS image sensor array, including a detection module detectingpixel, a switch capacitor amplifier OPAMP, a light intensity detection module, a light weakening detection module, and a logic module. One or more detection modules are arranged at the center of multiple areas divided by the CMOS image sensor array; the sensed output voltage Vdet_out is amplified by the switch capacitor amplifier; the output voltage amp_out is then connected to the light intensity detection module and the light weakening detection module; the light intensity signal High_out and the light weakening signal Low_out are both connected to the logic module; when the external system detects that the wake-up signal wakeup is at a high level, the operation of waking up the CMOS image sensor array is immediately performed. The above-mentioned wake-up device has low power consumption and does not require large data calculation and storage units, which can effectively improve the wake-up efficiency.
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Citation Information
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