Plasma device

Abstract

A plasma apparatus. The plasma apparatus includes a pedestal, a metal ring, and a movable dielectric ring. The pedestal is configured to carry a workpiece to be processed. The metal ring is disposed above the pedestal. The metal ring is configured to surround the workpiece to be processed. A movable dielectric ring is disposed above the pedestal. A footprint of the movable dielectric ring covers the metal ring.

Description

Technical Field

[0001] This application relates to a device, and more specifically, to a plasma device. Background Technology

[0002] In existing technologies, when using plasma to process wafers, a metal ring is placed on a base and surrounds the wafer. However, because the metal ring and the wafer are made of different materials, the strong electric field during wafer processing can easily induce arcing between the metal ring and the wafer. Furthermore, plasma bombardment of the metal ring can easily cause metal sputtering contamination inside the plasma equipment. Summary of the Invention

[0003] In view of this, this application proposes a plasma device to solve the above problems.

[0004] According to one embodiment of this application, a plasma device is provided. The plasma device includes a base, a metal ring, and a movable dielectric ring. The base is configured to support a workpiece to be processed. The metal ring is disposed on the base. The metal ring is configured to surround the workpiece to be processed. The movable dielectric ring is disposed on the base. The orthographic projection of the movable dielectric ring covers the metal ring.

[0005] According to one embodiment of this application, the inner circumference of the movable medium ring has a downwardly extending sidewall portion.

[0006] According to one embodiment of this application, the sidewall portion is annular.

[0007] According to one embodiment of this application, the plasma device further includes a bushing. The bushing includes a first extension extending upward from the outer circumference of the movable dielectric ring.

[0008] According to one embodiment of this application, the bushing further includes a second extension extending downward from the outer circumference of the movable medium ring.

[0009] According to one embodiment of this application, the bushing and the movable medium ring are integrally formed.

[0010] According to one embodiment of this application, the bushing and the movable medium ring are detachably connected.

[0011] According to one embodiment of this application, the included angle between the bushing and the movable medium ring is in the range of 10-100 degrees.

[0012] According to one embodiment of this application, the movable medium ring and the bushing comprise ceramic or polytetrafluoroethylene.

[0013] According to one embodiment of this application, the movable medium ring is configured to move away from the base as the workpiece to be processed enters the plasma device.

[0014] According to one embodiment of this application, the movable medium ring is configured to move toward the base when the workpiece to be processed is placed on the base.

[0015] According to one embodiment of this application, the movable medium ring is configured to move toward the metal ring to a distance of 0-5 mm from the base when the workpiece to be processed is placed on the base.

[0016] According to one embodiment of this application, the inner diameter of the movable medium ring is in the range of 300-310 mm. Attached Figure Description

[0017] The accompanying drawings are provided to further illustrate the present application and form part of the specification. They are used together with the following detailed description to explain the present application, but do not constitute a limitation thereof. In the drawings:

[0018] Figure 1 A block diagram illustrating a plasma device according to an embodiment of this application.

[0019] Figure 2 A schematic diagram illustrating a plasma device according to an embodiment of this application.

[0020] Figure 3 The illustration shows a top view of a movable medium ring and a workpiece to be processed placed on a base according to an embodiment of this application.

[0021] Figure 4 A schematic diagram illustrating a plasma device according to an embodiment of this application.

[0022] Figure 5 A schematic diagram illustrating a plasma device according to an embodiment of this application.

[0023] Figure 6 An enlarged view of a movable medium ring and bushing according to an embodiment of this application is shown.

[0024] Figure 7A and Figure 7B Schematic diagrams showing the included angle between the movable medium ring and the bushing. Detailed Implementation

[0025] The following disclosure provides various implementations or examples that can be used to achieve different features of this disclosure. Specific examples of components and configurations described below are for simplification purposes. It is understood that these descriptions are illustrative only and are not intended to limit the scope of this disclosure. For example, in the following description, forming a first feature on or over a second feature may include, in some embodiments, the first and second features being in direct contact with each other; and may also include, in some embodiments, additional components being formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, component symbols and / or reference numerals may be reused in multiple embodiments of this disclosure. Such reuse is for the purpose of brevity and clarity and does not in itself represent a relationship between the different embodiments and / or configurations discussed.

[0026] Furthermore, the use of spatially relative terms, such as "below," "below," "lower than," "above," "above," and similar terms, may be for the convenience of describing the relationship between one component or feature depicted in the figure and one or more other components or features. These spatially relative terms, in addition to the orientation shown in the figure, also encompass various different orientations of the device during use or operation. The device may be placed in other orientations (e.g., rotated 90 degrees or in other orientations), and these spatially relative descriptive terms should be interpreted accordingly.

[0027] While the numerical ranges and parameters used to define the broader scope of this application are approximate values, the relevant values ​​in the specific embodiments have been presented as precisely as possible. However, any numerical value inevitably contains standard deviations due to individual test methods. Here, "approximately" generally means that the actual value is within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range. Alternatively, the term "approximately" means that the actual value falls within the acceptable standard error of the average value, as determined by those skilled in the art to which this application pertains. It is understood that, except for experimental examples, or unless expressly stated otherwise, all ranges, quantities, values, and percentages used herein (e.g., to describe material usage, duration, temperature, operating conditions, quantity ratios, and the like) are modified with "approximately". Therefore, unless otherwise stated, the numerical parameters disclosed in this specification and the accompanying claims are approximate values ​​and are subject to change as needed. At a minimum, these numerical parameters should be understood as the indicated significant digits and values ​​obtained by applying general rounding. Here, a range of values ​​is expressed as a distance from one endpoint to the other or between the two endpoints; unless otherwise stated, the range of values ​​described herein includes the endpoints.

[0028] Figure 1This is a block diagram illustrating a plasma device 1 according to an embodiment of the present application. In some embodiments, the plasma device 1 is configured to process a workpiece (such as a wafer) using plasma.

[0029] In some embodiments, the plasma device 1 can activate the surface of the workpiece to be processed using plasma. In some embodiments, the plasma device 1 can perform other treatments on the workpiece to be processed using plasma.

[0030] In some embodiments, the plasma device 1 includes a base 11, a metal ring 12, and a movable dielectric ring 13. In some embodiments, the base 11 is configured to support a workpiece to be processed. In some embodiments, the metal ring 12 is disposed on the base 11. In some embodiments, the metal ring 12 is configured to surround the workpiece to be processed. In some embodiments, the movable dielectric ring 13 is disposed on the base 11. In some embodiments, the orthographic projection of the movable dielectric ring 13 covers the metal ring 12; in other words, viewed from a top view, the movable dielectric ring 13 completely obscures the metal ring 12. In some embodiments, the movable dielectric ring 13 includes an insulating material. In some embodiments, the movable dielectric ring 13 includes ceramic or polytetrafluoroethylene (PTFE). In some embodiments, the movable dielectric ring 13 may include alumina ceramic, aluminum nitride ceramic, or PTFE. In some embodiments, the movable dielectric ring 13 includes polyimide.

[0031] It should be noted that the plasma device 1 also includes other necessary components to process the workpiece. For example, the plasma device 1 also includes a chamber for accommodating the base 11, the metal ring 12, and the movable dielectric ring 13. For example, the plasma device 1 also includes control components (such as a stepper motor) for controlling the movement of the movable dielectric ring 13.

[0032] Figure 2 A schematic diagram illustrating a plasma device 2 according to an embodiment of this application. In some embodiments, the plasma device 2 can be used to implement... Figure 1 Plasma device 1. In some embodiments, plasma device 2 uses radio frequency power (not shown) to ignite the reactive gas filled in plasma device 2 to generate plasma, and then processes the workpiece WF to be processed by plasma.

[0033] In some embodiments, the plasma device 2 includes a base 21, a metal ring 22, and a movable dielectric ring 23. In some embodiments, the base 21 is disposed at the lower part of the plasma device 2 and configured to support the workpiece WF to be processed. In some embodiments, the base 21 is coupled to an external radio frequency power supply RFS to attract plasma to process the workpiece WF on the base 21.

[0034] In some embodiments, the metal ring 22 is disposed on the base 21. In some embodiments, the metal ring 22 can be moved into the plasma device 2 simultaneously with the workpiece WF and placed on the base 21. In some embodiments, the metal ring 22 can be directly disposed on the base 21. In some embodiments, when the workpiece WF is placed on the base 21, the metal ring 22 surrounds the workpiece WF.

[0035] In some embodiments, the movable dielectric ring 23 is disposed on the base 21. In some embodiments, the movable dielectric ring 23 is coupled to a control component CE, which controls the movement of the movable dielectric ring 23. In some embodiments, the control component CE can control the movable dielectric ring 23 to move vertically. In some embodiments, the control component CE can control the movable dielectric ring 23 to move horizontally. In some embodiments, the movable dielectric ring 23 comprises ceramic or polytetrafluoroethylene. In some embodiments, the movable dielectric ring 23 may comprise alumina ceramic, aluminum nitride ceramic, or polytetrafluoroethylene. In some embodiments, the movable dielectric ring 23 comprises polyimide.

[0036] In some embodiments, the orthographic projection of the movable medium ring 23 covers the metal ring 22. (See reference...) Figure 3 , Figure 3 This illustration shows a top view of a movable medium ring 23 and a workpiece WF, according to an embodiment of this application, placed on a base 21. Since the orthographic projection of the movable medium ring 23 covers the metal ring 22, the movable medium ring 23 completely obscures the metal ring 22 when viewed from a top angle. In some embodiments, the movable medium ring 23 may be completely flush against the upper surface of the metal ring 22. In some embodiments, the distance between the movable medium ring 23 and the metal ring 22 is in the range of 0-5 mm. In some embodiments, the distance between the movable medium ring 23 and the metal ring 22 is in the range of 0-1 mm.

[0037] Refer again Figure 2In some embodiments, the inner diameter 1R23 of the movable medium ring 23 is equal to the inner diameter of the metal ring 22; in other words, the inner circumference 1S23 of the movable medium ring 23 is aligned with the inner circumference of the metal ring 22. In some embodiments, the inner diameter 1R23 of the movable medium ring 23 is smaller than the inner diameter of the metal ring 22; in other words, the inner circumference 1S23 of the movable medium ring 23 is closer to the workpiece WF to be processed than the inner circumference of the metal ring 22. The actual size of the movable medium ring 23 is related to the actual size of the metal ring 22 and / or the actual size of the movable medium ring 23. In some embodiments, when the diameter of the workpiece WF to be processed is 300 mm, the inner diameter R23 of the movable medium ring 23 is approximately in the range of 300-320 mm. In some embodiments, when the diameter of the workpiece WF to be processed is 300 mm, the inner diameter R23 of the movable medium ring 23 is approximately in the range of 302-310 mm. In some embodiments, when the diameter of the workpiece WF to be processed is 300 mm, the inner diameter R23 of the movable medium ring 23 is approximately in the range of 300.4-306 mm.

[0038] In some embodiments, the outer diameter 2R23 of the movable medium ring 23 is equal to the outer diameter of the metal ring 22; in other words, the outer circumference 2S23 of the movable medium ring 23 is aligned with the outer circumference of the metal ring 22. In some embodiments, the outer diameter 2R23 of the movable medium ring 23 is larger than the outer diameter of the metal ring 22; in other words, the outer circumference 2S23 of the movable medium ring 23 is further away from the workpiece WF to be processed than the outer circumference of the metal ring 22. In some embodiments, when the diameter of the workpiece WF to be processed is 300 mm, the outer diameter 2R23 of the movable medium ring 23 is 0.4-6 mm larger than the outer diameter of the metal ring 22.

[0039] It should be noted that the inner diameter of the movable medium ring 23 only needs to be slightly larger than the diameter of the workpiece WF to be processed in order to avoid affecting the processing of the workpiece WF, and the inner and outer diameters of the movable medium ring 23 only need to be able to completely cover the metal ring 22. The inner and outer diameters of the movable medium ring 23 are not a limitation of this application.

[0040] When the workpiece WF is to be moved into the plasma device 2, the control unit CE controls the movable medium ring 23 to move away from the base 21. The control unit CE can control the movable medium ring 23 to move away from the base 21 in a vertical or horizontal direction. Next, the robotic arm grasps the workpiece WF and moves it into the plasma device 2, placing it on the base 21. When the workpiece WF is placed on the base 21, the metal ring 22 surrounds it. Then, the control unit CE controls the movable medium ring 23 to move closer to the base 21 until the movable medium ring 23 is completely flush with the metal ring 22 or at a certain distance. Next, the plasma device 2 ignites the reactive gas to generate plasma, and then processes the workpiece WF using the plasma.

[0041] When the workpiece WF is processed by plasma using plasma device 2, the movable dielectric ring 23 completely shields the metal ring 22, thus reducing the risk of arc discharge under high electric fields and even effectively preventing arc discharge between the metal ring 22 and the workpiece WF. Furthermore, since the movable dielectric ring 23 completely shields the metal ring 22, plasma bombardment of the metal ring 22 is effectively prevented, thereby avoiding metal sputtering contamination inside the plasma device 2.

[0042] It should be noted that, although in Figure 2 In one embodiment, the movable medium ring 23 has a circular ring structure; however, in other embodiments, the movable medium ring 23 may be of other shapes. The shape of the movable medium ring 23 is not a limitation of this application, as long as it can cover the metal ring 22 during processing.

[0043] Figure 4 A schematic diagram illustrating a plasma device 3 according to an embodiment of this application is shown. The plasma device 3 is substantially the same as the plasma device 2, differing only in the movable dielectric ring 33. Therefore, the parts identical to those in the plasma device 3 and plasma device 2 will not be described again to save space. In some embodiments, the inner circumference 1S33 of the movable dielectric ring 33 has a downwardly extending sidewall portion 331. In some embodiments, the sidewall portion 331 is configured to shield the metal ring 22 from the side for better shielding. In some embodiments, the sidewall portion 331 is annular. In some embodiments, the sidewall portion 331 may also be an incomplete annulus; in other words, the sidewall portion 331 may be composed of multiple downwardly extending tooth-like structures.

[0044] Figure 5A schematic diagram illustrating a plasma device 4 according to an embodiment of this application is shown. Plasma device 4 is substantially the same as plasma device 2, the only difference being that plasma device 4 also includes a bushing 44. Therefore, the parts of plasma device 3 that are the same as plasma device 2 will not be described again to save space.

[0045] In some embodiments, the bushing 44 includes a first extension 441 extending upward from the outer circumference 2S23 of the movable medium ring 23. In some embodiments, the bushing 44 also includes a second extension 442 extending downward from the outer circumference 2S23 of the movable medium ring 23. In some embodiments, the bushing 44 is annular. In some embodiments, the bushing 44 and the movable medium ring 23 are integrally formed. In some embodiments, the bushing 44 and the movable medium ring 23 may be detachably connected. In some embodiments, the first extension 441 and the second extension 442 may be detachably connected. In some embodiments, the material of the bushing 44 is similar to that of the movable medium ring 23. In some embodiments, the bushing 44 comprises ceramic or polytetrafluoroethylene (PTFE). In some embodiments, the bushing 44 may comprise alumina ceramic, aluminum nitride ceramic, or PTFE. In some embodiments, the control component CE can simultaneously control the movable medium ring 23 and the bushing 44 to move together. In some embodiments, the movable medium ring 23 and bushing 44 can be moved separately by different control components (not shown).

[0046] Figure 6 This illustration shows an enlarged view of the movable dielectric ring 23 and the bushing 44 according to an embodiment of this application. In some embodiments, the angle θ between the bushing 44 and the movable dielectric ring 23 is in the range of 5-95 degrees. In some embodiments, the angle θ between the bushing 44 and the movable dielectric ring 23 is in the range of 10-90 degrees. In some embodiments, the angle θ between the bushing 44 and the movable dielectric ring 23 is in the range of 15-75 degrees. Due to edge effects, plasma uniformity varies, which may cause oversputtering in some areas or incomplete activation in others after surface activation treatment. By changing the angle θ between the bushing 44 and the movable dielectric ring 23, the incident angle of the plasma on the surface of the workpiece WF can be adjusted, thereby making the plasma more concentrated at the center of the workpiece WF or deviating from the center of the workpiece WF.

[0047] In some embodiments, the angle θ can be changed by maintaining the bushing 44 vertical and adjusting the tilt angle of the movable medium ring 23. (See reference...) Figure 7A The included angle θ can be adjusted by setting the movable medium ring 23 to an inclined position and setting the bushing 44 to a vertical position. In some embodiments, the included angle θ can be changed by keeping the movable medium ring 23 horizontal and adjusting the tilt angle of the bushing 44. (See reference...) Figure 7BThe included angle θ can be adjusted by setting the movable medium ring 23 to a horizontal position and setting the bushing 44 to an inclined position. However, this application is not limited thereto. In some embodiments, the change of the included angle θ can be achieved by simultaneously changing the inclination angle of the bushing 44 and the inclination angle of the movable medium ring 23. Those skilled in the art should be able to understand its implementation after reading the above embodiments, and detailed descriptions are omitted here.

[0048] It should be noted that the above embodiments can be combined with each other. For example, Figure 4 The movable medium ring 33 in the embodiment can be with Figure 5 The bushings 44 in the embodiments can be combined. Those skilled in the art should be able to understand their implementation after reading the above embodiments; detailed descriptions are omitted here.

[0049] In this application, different structural designs, such as shape and size, of the movable dielectric ring 23 or bushing 44 can be adjusted to affect plasma and gas flow characteristics, thereby changing the uniformity of surface activation. The device of this application can be applied in various fields, such as pre-wafer bonding treatment, which can improve plasma uniformity, ensure uniform activation, and increase bonding success rate. It can also be used in other devices where a metal ring needs to be shielded during processing.

[0050] As used herein, the terms “approximately,” “substantially,” “essentially,” and “about” are used to describe and account for small variations. When used in conjunction with an event or situation, the terms may refer to examples where the event or situation occurs precisely or very approximately. As used herein with respect to a given value or range, the term “about” generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. A range may be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term “substantially coplanar” may refer to two surfaces located along the same plane within a few micrometers (μm), for example, within 10 μm, 5 μm, 1 μm, or 0.5 μm along the same plane. When referring to “substantially” identical numerical values ​​or characteristics, the term may refer to values ​​within ±10%, ±5%, ±1%, or ±0.5% of the average of said values.

[0051] As used herein, the terms “approximately,” “substantially,” “essentially,” and “about” are used to describe and explain small variations. When used in conjunction with an event or situation, the terms may refer to examples where the event or situation occurred precisely or where it occurred very approximately. For example, when used in conjunction with a numerical value, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two values ​​is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), then the two values ​​can be considered "substantially" or "approximately" the same. For example, "substantially" parallel can refer to an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, “basically” vertical can refer to an angular variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0052] For example, if the displacement between two surfaces is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm, then the two surfaces can be considered coplanar or substantially coplanar. If the displacement between any two points on a surface relative to a plane is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm, then the surface can be considered planar or substantially planar.

[0053] As used herein, the terms “conductive,” “electrically conductive,” and “conductivity” refer to the ability to transfer electric current. Conductive materials generally indicate those that exhibit little or no resistance to the flow of electric current. One measure of conductivity is Siemens per meter (S / m). Typically, a conductive material is one with a conductivity greater than approximately 10⁴ S / m (e.g., at least 10⁵ S / m or at least 10⁶ S / m). The conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0054] As used herein, unless the context clearly indicates otherwise, the singular terms “a / an” and “the” may include plural indicators. In the description of some embodiments, a component provided “on” or “above” another component may cover the case where the preceding component is directly on the following component (e.g., in physical contact with the following component), and the case where one or more intermediate components are located between the preceding and following components.

[0055] As used herein, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” “lower,” “left,” “right,” etc., may be used to describe the relationship between one component or feature and another component or feature as illustrated in the figures. In addition to the orientations depicted in the figures, spatial relative terms are intended to cover different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein shall be interpreted accordingly. It should be understood that when a component is referred to as “connected to” or “coupled to” another component, it may be directly connected to or coupled to said other component, or there may be an intermediate component.

[0056] The foregoing outlines several embodiments and detailed features of this disclosure. The embodiments described in this disclosure can readily serve as the basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of this disclosure and various changes, substitutions, and modifications can be made without departing from the spirit and scope of this disclosure.

Claims

1. A plasma device, characterized in that, include: A base, configured to support the workpiece to be processed; A metal ring is disposed on the base and configured to surround the workpiece to be processed; A movable medium ring is disposed on the base, and the orthographic projection of the movable medium ring covers the metal ring; as well as The bushing includes a first extension extending upward from the outer circumference of the movable medium ring, wherein the movable medium ring is configured to be horizontal, the bushing is configured to be inclined, and the included angle between the bushing and the movable medium ring is in the range of 5-95 degrees.

2. The plasma device according to claim 1, characterized in that, The inner circumference of the movable medium ring has a downwardly extending sidewall portion.

3. The plasma device according to claim 2, characterized in that, The sidewall portion is ring-shaped.

4. The plasma device according to claim 1, characterized in that, The bushing also includes a second extension extending downward from the outer circumference of the movable medium ring.

5. The plasma device according to claim 1, characterized in that, The bushing and the movable medium ring are integrally formed.

6. The plasma device according to claim 1, characterized in that, The bushing is detachably connected to the movable medium ring.

7. The plasma device according to claim 1, characterized in that, The movable medium ring and the bushing are made of ceramic or polytetrafluoroethylene.

8. The plasma device according to claim 1, characterized in that, The movable medium ring is configured to move away from the base as the workpiece enters the plasma device.

9. The plasma device according to claim 1, characterized in that, The movable medium ring is configured to move toward the base when the workpiece to be processed is placed on the base.

10. The plasma device according to claim 9, characterized in that, The movable medium ring is configured to move toward the base to a distance of 0-5 mm from the metal ring when the workpiece to be processed is placed on the base.

11. The plasma device according to claim 1, characterized in that, The inner diameter of the movable medium ring is in the range of 300-310 mm.

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