Current-aperture vertical electron transistors and methods of making the same

Abstract

The application provides a current aperture vertical electron transistor and a preparation method thereof, the transistor comprising: a substrate; a contact layer; a drift layer; a current blocking layer, wherein a current aperture is arranged in the current blocking layer; a back barrier layer; a channel layer; a top barrier layer, wherein the top barrier layer and the channel layer form a two-dimensional electron gas channel; a gate electrode, which is arranged on the top barrier layer and corresponds to the position above the current aperture; a drain electrode, which is arranged on the bottom surface of the substrate; a source electrode, which is arranged on the top barrier layer; and a through hole arranged in the region of the back barrier layer corresponding to the gate electrode, wherein the aperture diameter of the through hole is less than or equal to the radial size of the gate electrode and greater than or equal to the aperture diameter of the current aperture of the current blocking layer. The current aperture vertical electron transistor has a better electron confinement effect, can effectively prevent the drift of electrons in the channel layer outside the two-dimensional electron gas, reduce the leakage current of the transistor, and improve the switching speed of the transistor, so that the gate electrode can more effectively control the switching of the transistor.

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