三维存储器装置
By introducing dual access paths into the three-dimensional AND gate flash memory, the problem of the limited number of sense amplifiers is solved, enabling more efficient data writing and reading, reducing circuit area and current consumption, and improving memory performance.
CN116417046BActive Publication Date: 2026-07-17MACRONIX INTERNATIONAL CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MACRONIX INTERNATIONAL CO LTD
- Filing Date
- 2022-01-19
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In 3D AND gate flash memory, the data read bandwidth is limited by the number of sense amplifiers, resulting in a large layout area and high current consumption, which cannot effectively improve memory performance.
Method used
It adopts a dual access path design, which realizes data writing and reading through path selector and page buffer respectively, and shares bit line and sense amplifier, reducing circuit area and current consumption.
Benefits of technology
By separating the data write and read paths, the performance of the 3D memory device is improved, the circuit area and current consumption are reduced, and the data read efficiency is increased.
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Smart Images
Figure CN116417046B_ABST
Abstract
本发明提供一种三维存储器装置，如三维与门快闪存储器(3D AND Flash memory)装置，包括第一页缓冲器、第二页缓冲器、感测放大器、第一路径选择器以及第二路径选择器。第一页缓冲器以及第二页缓冲器分别用以暂存第一写入数据以及第二写入数据。第一路径选择器依据第一控制信号以使感测放大器或第一页缓冲器耦接至第一共用位线。第二路径选择器依据第二控制信号以使感测放大器或第二页缓冲器耦接至第二共用位线。
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