Light emitting display device

Abstract

A light emitting display apparatus includes a substrate, a pixel driving circuit layer disposed in the substrate, a planarization layer disposed on the pixel driving circuit layer, and an anode electrode disposed on the planarization layer, wherein the anode electrode is connected to a driving transistor included in the pixel driving circuit layer, the pixel driving circuit layer includes a first main electrode and a second main electrode disposed on the first main electrode with an insulating layer therebetween, and a first low reflection electrode is disposed under the first main electrode and a second low reflection electrode is disposed under the second main electrode.

Description

Technical Field

[0001] This disclosure relates to a light-emitting display device. Background Technology

[0002] A polarizing film is attached to the light-emitting display panel used in light-emitting display devices to prevent the reflection of external light.

[0003] In this case, the manufacturing cost of the light-emitting display device increases because a polarizing film should be added, and the manufacturing process of the light-emitting display device becomes more complicated because a process of attaching the polarizing film to the light-emitting display panel should be added.

[0004] Furthermore, the thickness of the light-emitting display device increases due to the polarizing film, and therefore, it cannot meet the user's requirement to reduce the thickness of the light-emitting display device. Summary of the Invention

[0005] Therefore, this disclosure provides a light-emitting display device that substantially eliminates one or more problems caused by the limitations and disadvantages of the prior art.

[0006] More specifically, this disclosure provides a light-emitting display device in which a low-reflection electrode is disposed below a main electrode included in a pixel driving circuit layer and the side surfaces of the low-reflection electrode and the main electrode are covered by a black material.

[0007] Additional advantages and features of this disclosure will be set forth in part in the description which follows, and will become apparent in part to those skilled in the art upon examination of the following, or may be learned from practice of this disclosure. Other advantages of this disclosure may be realized and obtained from the structures specifically pointed out in the draft specification and its claims, as well as in the accompanying drawings.

[0008] To achieve these and other advantages and in accordance with the purposes of this disclosure, as specifically implemented and broadly described herein, a light-emitting display device includes: a substrate; a pixel driving circuit layer disposed in the substrate; a planarization layer disposed on the pixel driving circuit layer; and an anode electrode disposed on the planarization layer, wherein the anode electrode is connected to a driving transistor included in the pixel driving circuit layer, the pixel driving circuit layer including a first main electrode and a second main electrode disposed on the first main electrode with an insulating layer therebetween, and a first low-reflection electrode disposed below the first main electrode and a second low-reflection electrode disposed below the second main electrode.

[0009] It will be understood that the above general description and the following detailed description of this disclosure are exemplary and illustrative, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0010] The accompanying drawings are included to provide a further understanding of this disclosure and are incorporated in and constitute a part of this application. The drawings illustrate various aspects of this disclosure and, together with the description, serve to illustrate the principles of this disclosure.

[0011] In the attached image:

[0012] Figure 1 This is an example diagram illustrating the configuration of a light-emitting display device according to this disclosure;

[0013] Figure 2 This is an example diagram illustrating the structure of a pixel for a light-emitting display device according to the present disclosure;

[0014] Figure 3 This is a cross-sectional view of the light-emitting display panel of the light-emitting display device according to the present disclosure;

[0015] Figure 4 This is an example diagram showing the first main electrode included in the first metal layer of the light-emitting display device according to the present disclosure;

[0016] Figure 5 This is an example diagram illustrating the second main electrode included in the second metal layer of the light-emitting display device according to the present disclosure;

[0017] Figure 6 It is shown Figure 4 The first main electrode shown and Figure 5 An example diagram of the second main electrode is shown;

[0018] Figure 7 It shows along Figure 6 An example diagram of a cross-section taken by line A-A';

[0019] Figure 8 It shows along Figure 6 An example diagram of a cross-section taken by line B-B';

[0020] Figure 9 This is an example diagram used to describe the phenomenon of light reflection occurring in a light-emitting display panel; and

[0021] Figure 10 It shows along Figure 6 Another example of a cross-sectional view taken by line A-A'. Detailed Implementation

[0022] Exemplary aspects of this disclosure will now be described in detail, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts.

[0023] The advantages and features of this disclosure, and its implementation methods, will be illustrated by the following aspects described with reference to the accompanying drawings. However, this disclosure may be embodied in various forms and should not be construed as limited to the aspects set forth herein. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is limited only by the scope of the claims.

[0024] The shapes, dimensions, ratios, angles, and quantities disclosed in the accompanying drawings for the purpose of describing various aspects of this disclosure are merely examples, and therefore, this disclosure is not limited to the details shown. Similar reference numerals always denote similar elements. In the following description, detailed descriptions of relevant known functions or configurations will be omitted where it is determined that such detailed descriptions would unnecessarily obscure the focus of this disclosure. When using the terms "comprising," "having," and "including" as described in this specification, an additional part may be added unless "only" is used. Unless otherwise indicated, singular terms may include plural forms.

[0025] When interpreting a component, even if there is no explicit description of the error or tolerance range, the component is interpreted as including such an error or tolerance range.

[0026] When describing positional relationships, for example, when the positional relationship between two parts is described as such as "on," "above," "below," and "next to," one or more other parts may be placed between the two parts unless more restrictive terms such as "exactly" or "directly" are used.

[0027] When describing temporal relationships, such as when time sequence is described as “after,” “following,” “next,” and “before,” discontinuous situations may be included unless more restrictive terms such as “just,” “immediately,” or “directly” are used.

[0028] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0029] In describing the elements of this disclosure, the terms “first,” “second,” “A,” “B,” “(a),” “(b),” etc., may be used. These terms are intended to identify corresponding elements relative to other elements, and the basis, order, or number of corresponding elements shall not be limited by these terms. Expressions of an element being “connected,” “joined,” or “adhered” to another element or layer, unless otherwise specified, indicate that the element or layer may be directly connected or adhered to another element or layer, or indirectly connected or adhered to another element or layer, with one or more intermediate elements or layers “set” or “intercalated” between elements or layers.

[0030] The term "at least one" should be understood to include any and all combinations of one or more of the related listed items. For example, "at least one of the first, second, and third items" means a combination of all items proposed from two or more of the first, second, and third items, as well as the first, second, or third item.

[0031] The features of the various aspects of this disclosure may be partially or wholly linked or combined with each other, and may interoperate differently with each other and be driven technically as will be fully understood by those skilled in the art. The aspects of this disclosure may be implemented independently of each other, or may be implemented together in an interdependent relationship.

[0032] The various aspects of this disclosure will now be described in detail with reference to the accompanying drawings.

[0033] Figure 1 This is an example diagram illustrating the configuration of a light-emitting display device according to the present disclosure. Figure 2 This is an example diagram illustrating the structure of a pixel for a light-emitting display device according to the present disclosure.

[0034] The light-emitting display device according to this disclosure can be configured with various electronic devices. For example, the electronic devices may include smartphones, tablet personal computers (PCs), televisions (TVs), and monitors.

[0035] like Figure 1 As shown, the light-emitting display device according to this disclosure may include: a light-emitting display panel 100, which includes a display area 120 for displaying images and a non-display area 130 disposed outside the display area 120; a gating driver 200 for supplying gating signals to a plurality of gating lines GL1 to GLg disposed in the display area 120 of the light-emitting display panel 100; a data driver 300 for supplying data voltage to a plurality of data lines DL1 to DLd disposed in the light-emitting display panel 100; a controller 400 for controlling the driving of the gating driver 200 and the data driver 300; and a power supply 500 for supplying power to the controller 400, the gating driver 200, the data driver 300 and the light-emitting display panel 100.

[0036] First, the light-emitting display panel 100 may include a display area 120 and a non-display area 130.

[0037] Pixels 110 for displaying images may be disposed in display area 120, and non-display area 130 may at least partially or completely surround display area 120.

[0038] The gate lines GL1 to GLG, the data lines DL1 to DLd, and the pixel 110 can be set in the display area 120. Therefore, the display area 120 can display an image. Here, g and d can each be natural numbers.

[0039] like Figure 2 As shown, the pixel 110 included in the light-emitting display panel 100 may include an emission region, which includes a pixel driving circuit PDC (including a switching transistor Tsw1, a storage capacitor Cst, a driving transistor Tdr, and a sensing transistor Tsw2) and a light-emitting device ED.

[0040] The first terminal of the driving transistor Tdr can be connected to the high-voltage supply line PLA, which supplies high voltage EVDD, and the second terminal of the driving transistor Tdr can be connected to the light-emitting device ED. The second electrode of the light-emitting device ED can be connected to the low-voltage supply line PLB, which supplies low voltage EVSS.

[0041] The first terminal of the switching transistor Tsw1 can be connected to the data line DL, the second terminal of the switching transistor Tsw1 can be connected to the gate of the driving transistor Tdr, and the gate of the switching transistor Tsw1 can be connected to the gate line GL.

[0042] The data voltage Vdata can be supplied to the data line DL, and the strobe signal GS can be supplied to the strobe line GL.

[0043] The sensing transistor Tsw2 provides a threshold voltage or mobility for measuring the driving transistor. The first terminal of the sensing transistor Tsw2 can be connected to the second terminal of the driving transistor Tdr and the light-emitting device ED. The second terminal of the sensing transistor Tsw2 can be connected to the reference voltage line RL, which supplies the reference voltage Vref. The gate of the sensing transistor Tsw2 can be connected to the sensing control line SCL, which supplies the sensing control signal SS.

[0044] The structure of the pixels 110 included in the light-emitting display panel 100 is not limited to Figure 2 The structure shown is such that the structure of pixel 110 can be changed to various types.

[0045] Various metal electrodes and insulating layers configuring the pixels 110 can be disposed on a base substrate (hereinafter referred to as the substrate), such as a film or glass substrate. That is, the light-emitting display panel 100 may include the substrate and the insulating layers and metal electrodes disposed on the substrate.

[0046] The data driver 300 can be mounted on a chip-on-film (COF) attached to the display panel 100. In this case, the data driver 300 can be connected to the controller 400 and the data lines DL1 to DLd included in the light-emitting display panel 100.

[0047] The data driver 300 can be directly installed in the light-emitting display panel 100 and then connected to the controller 400 set on the main substrate.

[0048] The data driver 300, together with the controller 400, can be implemented as an integrated circuit (IC). In this case, the IC can be mounted on the COF or directly integrated into the light-emitting display panel 100.

[0049] The controller 400 can use a timing synchronization signal transmitted from an external system to re-align input video data transmitted from an external system, and can generate a data control signal DCS to be supplied to the data driver 300 and a gating control signal GCS to be supplied to the gating driver 200.

[0050] For this purpose, the controller 400 may include: a data aligner that realigns input video data to generate image data Data and supplies the image data Data to the data driver 300; a control signal generator that uses a timing synchronization signal to generate a gating control signal GCS and a data control signal DCS; an input unit that receives the timing synchronization signal and input video data transmitted from an external system and transmits the timing synchronization signal and input video data to the data aligner and the control signal generator, respectively; and an output unit that supplies the image data Data generated by the data aligner and the data control signal DCS generated by the control signal generator to the data driver 300, and supplies the gating control signal GCS generated by the control signal generator to the gating driver 200.

[0051] An external system can perform the functions of the drive controller 400 and the electronic device. For example, when the electronic device is a TV, the external system can receive various audio, video, and audio information via a communication network, and can transmit the received video information to the controller 400. In this case, the image information may include input video data.

[0052] The power supply 500 can generate various types of electricity and can supply the generated electricity to the controller 400, the strobe driver 200, the data driver 300 and the light-emitting display panel 100.

[0053] Finally, the gating driver 200 can supply gating pulses to gating lines GL1 to GLg. When the gating pulse generated by the gating driver 200 is supplied to the gate of the switching transistor Tsw1 included in pixel 110, the switching transistor Tsw1 can be turned on. When the switching transistor Tsw1 is turned on, the data voltage supplied through the data lines can be supplied to pixel 110. When the gating cutoff signal generated by the gating driver 200 is supplied to the switching transistor Tsw1, the switching transistor Tsw1 can be turned off. When the switching transistor Tsw1 is turned off, the data voltage is no longer supplied to pixel 110. The gating signal GS supplied to the gating line GL can include a gating pulse and a gating cutoff signal.

[0054] Figure 3 This is a cross-sectional view of a light-emitting display panel for a light-emitting display device according to the present disclosure, specifically, Figure 3 This is a cross-sectional view showing the driving transistor Tdr and the light-emitting device ED.

[0055] like Figure 3 As shown, the light-emitting display panel applied to this disclosure may include: a substrate 101; a pixel driving circuit layer PDL disposed on the substrate 101; a planarization layer 105 disposed on and covering the pixel driving circuit layer PDL; an anode electrode AE ​​disposed on the planarization layer 105; a light-emitting layer EL disposed on the anode electrode AE; a cathode electrode CE disposed on the light-emitting layer EL; and an encapsulation layer 106 covering the cathode electrode CE.

[0056] First, the substrate 101 can be a glass substrate or a plastic substrate, and in addition, it can include various types of films.

[0057] A pixel driving circuit layer (PDL), including a driving transistor (Tdr), can be disposed on the substrate 101.

[0058] The pixel driving circuit PDC, including the driving transistor Tdr, can be set in the pixel driving circuit layer PDL. (See above reference.) Figure 2 As described, the pixel driving circuit PDC may include a switching transistor Tsw1, a storage capacitor Cst, a driving transistor Tdr, and a sensing transistor Tsw2. That is, the pixel driving circuit layer PDL may include at least two transistors. Other circuit layouts may have more transistors and / or capacitors.

[0059] Each transistor may include: an active layer AC, which includes a semiconductor; a gate insulating layer 103 disposed on the active layer AC; and a gate G disposed on the gate insulating layer 103. The gate G may be covered by a passivation layer 104, which may be covered by a planarization layer 105.

[0060] For example, the driving transistor Tdr may include: an active layer AC disposed on the buffer layer 102; a gate insulating layer 103 disposed on the active layer AC; a gate G disposed on the gate insulating layer 103; and a passivation layer 104 covering the upper end of the gate G. In this case, other transistors may be configured to... Figure 3 The driving transistor Tdr shown is of a similar type.

[0061] However, the structure of the driving transistor Tdr and each of the other transistors is not limited to Figure 3 The structure of the driving transistor Tdr is shown. That is, the structure of the driving transistor Tdr and each of the other transistors can be changed to various types.

[0062] In this case, such as Figure 3 As shown, a light-blocking plate LS can be disposed below the driving transistor Tdr to block external light from penetrating into the active layer AC during the manufacture of the light-emitting display device or when the light-emitting display device is used. Additionally, the light-blocking plate LS can be connected to one of the gate, first gate electrode, and second gate electrode of the driving transistor Tdr. Furthermore, the light-blocking plate LS can be used as various lines (e.g., data lines). Therefore, the light-blocking plate LS can be disposed in a floating state and can also be connected to a signal line supplying voltage. In this case, the light-blocking plate LS disposed in the floating state or connected to the signal line can be the first electrode.

[0063] The light-blocking plate LS can be positioned below other transistors included in the pixel driving circuit layer PDL, or it can be omitted. That is, the light-blocking plate LS can be positioned below the lower end of other transistors that need to block light, except for the lower end of the driving transistor Tdr, or it can be positioned in the area where light needs to be blocked in the area where no transistors are located.

[0064] The light-blocking plate LS can be disposed on the substrate 101 and can be covered by the buffer layer 102, and the active layer AC can be disposed on the buffer layer 102.

[0065] In addition, the pixel driving circuit layer PDL may include a data line DL, a gating line GL, a sensing control line SCL, a sensing line SL, and a voltage supply line PLA connected to the pixel driving circuit PDC.

[0066] Hereinafter, the data line DL, gating line GL, sensing control line SCL, sensing line SL, and voltage supply line PLA can be referred to as signal lines. That is, at least one signal line may be included in the pixel driver circuit layer PDL.

[0067] Each of the buffer layer 102, the gate insulating layer 103, and the passivation layer 104 may be formed of at least one inorganic layer or at least one organic layer, or may be formed of at least one inorganic layer and at least one organic layer. The buffer layer 102, the gate insulating layer 103, and the passivation layer 104 may be referred to as insulating layers. The passivation layer 104 may be omitted.

[0068] The gate, light-blocking plate LS, and signal lines of the driving transistor Tdr may include metal. A layer comprising at least one of the gate, light-blocking plate LS, and signal lines may be referred to as a metal layer.

[0069] That is, at least two metal layers and at least two insulating layers may be included in the pixel driving circuit layer (PDL).

[0070] The planarization layer 105 can be disposed on the pixel driving circuit layer PDL.

[0071] The planarization layer 105 can perform the function of planarizing the uneven upper surface of the pixel driving circuit layer PDL. That is, the planarization layer 105 can be formed with a thickness greater than the thickness of the pixel driving circuit layer PDL, so the upper surface of the planarization layer 105 can be a flat surface.

[0072] The planarization layer 105 may be formed of at least one inorganic layer or at least one organic layer, or may be formed of at least one inorganic layer and at least one organic layer.

[0073] The anode electrode AE ​​can be disposed on the planarization layer 105. The anode electrode AE ​​can be configured as part of the light-emitting device ED.

[0074] like Figure 2 and Figure 3 As shown, the anode electrode AE ​​can be electrically connected to the drive transistor Tdr included in the pixel drive circuit layer PDL and can be patterned for each pixel 110.

[0075] The anode electrode AE ​​may include transparent electrodes such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0076] That is, in the light-emitting display panel applied to this disclosure, such as Figure 3 As shown, light emitted from the light-emitting device ED can illuminate in the direction toward the substrate 101 (i.e., toward the lower end of the light-emitting display panel). This type of emission can be referred to as bottom emission type.

[0077] In this case, the light emitted from the light-emitting layer EL should pass through the anode electrode AE. Therefore, the anode electrode AE ​​may include a transparent electrode.

[0078] The dam BN may be disposed on the planarization layer 105 and may include an opening portion that exposes the anode electrode AE.

[0079] That is, the dam BN can cover the outer portion of the anode electrode AE, thus forming an opening portion for output light in pixel 110. Figure 3 The area of ​​the anode electrode AE ​​not covered by the dam BN shown can be an open portion.

[0080] For the purpose of further description, the dam BN may cover the outer portion of the anode electrode AE ​​and may be disposed in the display area 120 of the substrate 101 so that the anode electrode AE ​​is exposed.

[0081] BN (Bridge Noise Block) prevents light from overlapping between adjacent pixels.

[0082] The dam BN can be formed from at least one inorganic layer or at least one organic layer, or it can be formed from at least one inorganic layer and at least one organic layer.

[0083] Subsequently, the light-emitting layer EL can be disposed on the entire surface of the substrate 101 to cover the anode electrode AE ​​and the diaphragm BN.

[0084] The light-emitting layer EL may include one of an organic light-emitting layer, an inorganic light-emitting layer, and a quantum dot light-emitting layer, or may include a stacked or combined structure of an organic light-emitting layer (or an inorganic light-emitting layer) and a quantum dot light-emitting layer.

[0085] The light-emitting layer (EL) may include a hole injection layer (HIL), a hole transport layer (HTL), a hole blocking layer (HBL), an electron injection layer (EIL), an electron transport layer (ETL), an electron blocking layer (EBL), and a charge generation layer (CGL).

[0086] When the light-emitting layer EL emits white light, the light-emitting layer EL may include a hole injection layer (HIL) / hole transport layer (HTL), a blue organic layer, an electron injection layer (EIL) / charge generation layer (CGL) / electron transport layer (ETL), a red organic layer, a yellow-green organic layer, an electron injection layer (EIL) / charge generation layer (CGL) / electron transport layer (ETL), a blue organic layer, an electron injection layer (EIL) / electron transport layer (ETL), and an organic buffer layer, which are sequentially stacked on the anode electrode AE.

[0087] In addition to layers having the stacking order described above, the light-emitting layer EL may include layers having various stacking orders.

[0088] Subsequently, the cathode electrode CE can be disposed on the light-emitting layer EL, specifically, it can be disposed in the display area 120 and the non-display area 130 according to the shape of the plate.

[0089] The light-emitting layer EL used in this disclosure can be of the bottom-emission type as described above. In this case, the cathode electrode CE can perform the function of reflecting light emitted from the light-emitting layer EL toward the anode electrode AE. For this purpose, the cathode electrode CE can include metals such as copper and aluminum.

[0090] When the light-emitting device ED emits white light, the color filter can be placed below the anode electrode AE, or when it is a top-emitting display, the color filter can be placed on the cathode electrode CE.

[0091] Finally, the cathode electrode CE may be covered by the encapsulation layer 106.

[0092] The encapsulation layer 106 may be formed of at least one organic layer or at least one inorganic layer, or may be formed of at least one inorganic layer and at least one organic layer.

[0093] Water and oxygen flowing in from the outside can be blocked by the encapsulation layer 106 and cannot penetrate into the light-emitting layer EL.

[0094] A color filter can be disposed on the encapsulation layer 106. In this case, the color filter and the encapsulation layer 106 can be covered by the encapsulation substrate.

[0095] Figure 4 This is an example diagram illustrating the first main electrode included in the first metal layer of the light-emitting display device according to the present disclosure. Figure 5 This is an example diagram illustrating the second main electrode included in the second metal layer of the light-emitting display device according to the present disclosure. Figure 6 It is shown Figure 4 The first main electrode shown and Figure 5 An example diagram of the second main electrode is shown. Specifically, Figures 4 to 6 The first and second main electrodes are shown in four adjacent pixels R, G, B and W.

[0096] As described above, the pixel driving circuit layer (PDL) of the light-emitting display panel in this disclosure may include at least two metal layers and at least two insulating layers. Hereinafter, the two metal layers may be referred to as the first metal layer 150 and the second metal layer 160.

[0097] First, the first metal layer 150 is set in relation to... Figure 3 The light-blocking plate LS is located in a similar position as shown.

[0098] like Figure 4 As shown, the first main electrode 1M may be included in the first metal layer 150.

[0099] That is, the first metal layer 150 may include the first main electrode 1M. In this case, the first low-reflection electrode 1MTO may be disposed below the first main electrode 1M. Therefore, the first metal layer 150 may include the first low-reflection electrode 1MTO and the first main electrode 1M.

[0100] Furthermore, the first low-reflection electrode 1MTO and the first main electrode 1M included in the first metal layer 150 may be the first electrode 1ME, which will be described below.

[0101] For the purpose of further description, the first main electrode 1M included in the first metal layer 150 can be used as various lines such as gate lines and sensing control lines SCL, and can also be used as a light-blocking plate LS. Therefore, the first electrode 1ME described below can represent one of various lines or light-blocking plates LS.

[0102] The first metal layer 150 may be disposed on the substrate 101, and the first main electrode 1M may be included in the first metal layer 150.

[0103] The first main electrode 1M can be one of the aforementioned light-blocking plate LS and the signal line. The signal line formed by the first main electrode 1M can be referred to as the first signal line.

[0104] The first main electrode 1M may include copper (Cu), or may be formed from at least one of a variety of metallic materials other than Cu. For example, the first main electrode 1M may include metals such as molybdenum, aluminum, tungsten, and titanium, or alloys thereof. Alternatively, the first main electrode 1M may include a single metal such as Cu, or may be formed by stacking two or more metal layers.

[0105] The second metal layer 160 may represent including Figure 3 The layer of the gate G of the driving transistor Tdr in the middle.

[0106] like Figure 5 As shown, the second main electrode 2M may be included in the second metal layer 160.

[0107] That is, the second metal layer 160 may include the second main electrode 2M. In this case, the second low-reflection electrode 2MTO may be disposed below the second main electrode 2M. Therefore, the second metal layer 160 may include the second low-reflection electrode 2MTO and the second main electrode 2M.

[0108] Furthermore, the second low-reflection electrode 2MTO and the second main electrode 2M included in the second metal layer 160 may be the second electrode 2ME, which will be described below.

[0109] For the purpose of further description, the second main electrode 2M included in the second metal layer 160 can be used as various lines such as data lines and power lines, and also as electrodes for transistors. Therefore, the second electrode 2ME described below can represent one of various types of lines or one of the electrodes used to configure transistors.

[0110] The second metal layer 160 may overlap the first metal layer 150 with an insulating layer therebetween. The second metal layer 160 may be disposed on the first metal layer 150 with an insulating layer therebetween, and the second main electrode 2M may be included in the second metal layer 160. Here, the insulating layer may be at least one of the buffer layer 102 and the gate insulating layer 103.

[0111] As described above, the second main electrode 2M can be one of the gate G of the driving transistor Tdr, the gate G of other transistors, or a signal line. The signal line formed by the second main electrode 2M can be referred to as the second signal line.

[0112] The second main electrode 2M may be formed of a bilayer comprising copper and an alloy of molybdenum and titanium (MoTi). However, the second main electrode 2M may be formed solely of an alloy of molybdenum and titanium (MoTi). However, this disclosure is not limited thereto; the second main electrode 2M may comprise a metallic material with an etching rate lower than that of the second low-reflection electrode 2MTO. For example, the etching rate of the second main electrode 2M may be lower than that of the second low-reflection electrode 2MTO disposed below the second main electrode 2M.

[0113] Figure 7 It shows along Figure 6 The example diagram shown is a cross-sectional view taken by line A-A'. Figure 8 It shows along Figure 6 The example diagram shown is a cross-sectional view taken by line B-B'. Figure 9 This is an example diagram used to describe the phenomenon of light reflection occurring in a light-emitting display panel.

[0114] As described above, the pixel drive circuit layer (PDL) of the light-emitting display panel in this disclosure may include at least two metal layers and at least two insulating layers.

[0115] In this case, the first main electrode 1M may be included in the first metal layer 150 disposed on the substrate 101, and the second main electrode 2M may be included in the second metal layer 160 disposed on the first metal layer 150 through an insulating layer.

[0116] That is, the pixel driving circuit layer PDL may include a second main electrode 2M disposed on the first main electrode 1M with an insulating layer therebetween.

[0117] In this case, such as Figure 7As shown, the first low-reflection electrode 1MTO can be disposed below the first main electrode 1M, and the second low-reflection electrode 2MTO can be disposed below the second main electrode 2M.

[0118] The first main electrode 1M may include copper, the second main electrode 2M may include copper and an alloy of molybdenum and titanium (MoTi), and the first low-reflection electrode 1MTO and the second low-reflection electrode 2MTO may include molybdenum tantalum oxide (MTO). More specifically, the first low-reflection electrode 1MTO and the second low-reflection electrode 2MTO may be molybdenum tantalum oxide (MoTaOx).

[0119] In this case, in addition to molybdenum tantalum oxide (MoTaOx), the first low-reflection electrode 1MTO and the second low-reflection electrode 2MTO may include oxide metals such as molybdenum titanium oxide (MoTiOx), molybdenum chromium oxide (MoCrOx), and tungsten oxide (Wox).

[0120] The first main electrode 1M and the second main electrode 2M may comprise different metals, and molybdenum tantalum oxide (MTO) may be disposed beneath each of the first main electrode 1M and the second main electrode 2M. Specifically, the second main electrode 2M may be formed of a bilayer comprising an alloy (MoTi) and copper, and the first main electrode 1M may comprise copper. However, as described above, the first main electrode 1M may be formed of multiple layers, and the second main electrode 2M may be formed of a single layer.

[0121] In this case, the first electrode 1ME, which includes the first main electrode 1M and the first low-reflection electrode 1MTO, can be a first signal line or a light-blocking plate LS included in the pixel driving circuit layer.

[0122] That is, the first main electrode 1M can be a light-blocking plate LS or a first signal line, but in this disclosure, a first low-reflection electrode 1MTO, comprising a material with low reflectivity, can be disposed below the first main electrode 1M to prevent external light from being reflected by the first main electrode 1M. Therefore, the first electrode 1ME, comprising the first main electrode 1M and the first low-reflection electrode 1MTO, can be a light-blocking plate LS or a first signal line.

[0123] Furthermore, the second electrode 2ME, which includes the second main electrode 2M and the second low-reflection electrode 2MTO, can be the gate G of a transistor or a second signal line included in the pixel driving circuit layer.

[0124] That is, the second main electrode 2M can be a gate G or a second signal line, but in this disclosure, a second low-reflection electrode 2MTO, comprising a material with low reflectivity, can be disposed below the second main electrode 2M to prevent external light from being reflected by the second main electrode 2M. Therefore, the second electrode 2ME, comprising the second main electrode 2M and the second low-reflection electrode 2MTO, can be the gate G of a transistor or a second signal line.

[0125] In this case, the insulating layer may be disposed between the first electrode 1ME and the second electrode 2ME, and may be at least one of the buffer layer 102 and the gate insulating layer 103.

[0126] In this disclosure, such as Figure 7 and Figure 8 As shown, the outer portion of the first region C1 of the second electrode 2ME, which does not overlap with the first electrode 1ME, may be covered by a black material BM. The black material BM may be one of the materials that are black and used as a black substrate, or it may be one of the materials that are black and used as a black dam. For example, the black material BM may include negative photoresist (RP).

[0127] That is, the black material BM can be formed by mixing a chromium-based metallic material or a carbon-based organic material with a photoresist including a photopolymerization initiator, a binder resin, a polymer monomer, and a solvent. Alternatively, the black material BM may include a black substrate using an organic material including carbon black, or a black substrate using a composite metal oxide, or a black substrate using an inorganic material, or an organic material including carbon black.

[0128] The reason why the black material is placed on the outer part of the first region C1 of the second electrode 2ME, which does not overlap with the first electrode 1ME, will be briefly described below.

[0129] For example, the first main electrode 1M may include copper, the second main electrode 2M may include copper and an alloy of molybdenum and titanium (MoTi), and the first low-reflection electrode 1MTO and the second low-reflection electrode 2MTO may include molybdenum tantalum oxide (MTO).

[0130] The first low-reflection electrode 1MTO can be configured to prevent light penetrating into the lower end of the first main electrode 1M from being reflected by the first main electrode 1M, and the second low-reflection electrode 2MTO can be configured to prevent light penetrating into the lower end of the second main electrode 2M from being reflected by the second main electrode 2M.

[0131] Therefore, in the manufacturing process of the light-emitting display panel, molybdenum tantalum oxide (MTO) and copper, including those in the first electrode 1ME, can be sequentially deposited on the substrate. Subsequently, the molybdenum tantalum oxide (MTO) and copper can be etched using an etching process to form the first electrode 1ME.

[0132] In this case, since the etching properties of molybdenum tantalum oxide (MTO) are similar to those of copper, MTO and copper can be etched as similar types.

[0133] Through this process, a first electrode 1ME can be formed, and then the first electrode 1ME can be covered by a buffer layer 102 and a gate insulating layer 103.

[0134] The materials included in the second electrode 2ME (i.e., molybdenum tantalum oxide (MTO), copper and MoTi) can be sequentially deposited on the gate insulating layer 103.

[0135] Subsequently, molybdenum tantalum oxide (MTO), copper, and MoTi can be etched using an etching process to form the second electrode 2ME.

[0136] In this case, MoTi included in the second main electrode 2M may have the property of being less etched than molybdenum tantalum oxide (MTO) included in the second low-reflection electrode 2MTO.

[0137] Therefore, in the second electrode 2ME formed after the etching of molybdenum tantalum oxide (MTO), copper, and MoTi, as... Figure 7 and Figure 8 In this process, the end of the second main electrode 2M may protrude more than the end of the second low-reflection electrode 2MTO. As described above, the end of the second main electrode 2M, whose etching rate is less than that of the second low-reflection electrode 2MTO, may protrude more than the end of the second low-reflection electrode 2MTO.

[0138] As in this disclosure, in a bottom-emitting type light-emitting display device, external light can be incident on the inner portion of the light-emitting display panel 100 from a direction toward the substrate 101.

[0139] In this case, in such Figure 9 In the prior art light-emitting display panel shown, since the end of the second main electrode 2M protrudes more than the end of the second low-reflection electrode 2MTO, external light can be reflected through the protruding first region C1 and then released to the outside of the light-emitting display device through the substrate 101. However, since the second low-reflection electrode 2MTO is disposed in the second region C2, light is not reflected in the second region C2.

[0140] To prevent light from Figure 9 As shown, the reflection is in the first region C1. In this disclosure, the first region C1, in which the end of the second main electrode 2M protrudes more than the end of the second low-reflection electrode 2MTO, can be covered by a black material BM.

[0141] The first region C1 can represent the area of ​​the second electrode 2ME that does not overlap with the first electrode 1ME. Specifically, the first region C1 can represent the area at the end of the second electrode 2ME that does not overlap with the first electrode 1ME.

[0142] That is, such as Figure 7As shown, in the second region C2 where the second electrode 2ME overlaps with the first electrode 1ME, although the end of the second main electrode 2M protrudes more than the end of the second low-reflection electrode 2MTO, the protruding portion can be covered by the first electrode 1ME. Therefore, light penetrating the substrate 101 will not penetrate into the second region C2, and thus, external light will not be reflected in the second region C2.

[0143] Therefore, the black material BM may not be placed in the second region C2.

[0144] However, the black material BM can be configured to cover the entire second electrode 2ME.

[0145] The following will refer to Figure 7 and Figure 8 The features of this disclosure are described herein. Here, Figure 7 A cross-sectional view showing a portion of the overlapping area between the first electrode 1ME and the second electrode 2ME. Figure 8 The diagram shows a cross-sectional view of the region where the first electrode 1ME does not overlap with the second electrode 2ME, that is, a cross-sectional view of the region where only the second electrode 2ME is provided.

[0146] First, the insulating layer may be disposed between the first electrode 1ME and the second electrode 2ME, and may be at least one of the buffer layer 102 and the gate insulating layer 103.

[0147] In this case, the first electrode 1ME can be as follows Figure 7 As shown, it overlaps with the second electrode 2ME, or it can be as follows: Figure 8 As shown, it does not overlap with the second electrode 2ME. Additionally, as... Figure 7 As shown, only a portion of the second electrode 2ME can overlap with the first electrode 1ME, while the entire second electrode 2ME can overlap with the first electrode 1ME.

[0148] When the second electrode 2ME completely overlaps with the first electrode 1ME, as described above, external light can penetrate into the second electrode 2ME, and therefore, no reflection occurs within the second electrode 2ME. Therefore, the description of the case where the second electrode 2ME completely overlaps with the first electrode 1ME is omitted.

[0149] Subsequently, as described above, the outer portion of the first region C1 of the second electrode 2ME that does not overlap with the first electrode 1ME may be covered by the black material BM.

[0150] In this case, such as Figure 7 and Figure 8 As shown, the black material BM and the second electrode 2ME can be covered by a passivation layer 104, and the passivation layer 104 can be covered by a planarization layer 105.

[0151] However, the passivation layer 104 can be omitted. The passivation layer 104 can also be omitted in the following aspects.

[0152] Subsequently, as Figure 7 As shown, the outer portion of the second region C2 of the second electrode 2ME overlapping with the first electrode 1ME can be covered by the passivation layer 104, and the passivation layer 104 can be covered by the planarization layer 105.

[0153] Subsequently, as Figure 8 As shown, when the second electrode 2ME does not overlap with the first electrode 1ME, the entire outer portion of the second electrode 2ME that does not overlap with the first electrode 1ME can be covered by the black material BM.

[0154] In this case, the black material BM and the second electrode 2ME can be covered by the passivation layer 104, and the passivation layer 104 can be covered by the planarization layer 105.

[0155] Subsequently, as described above, the end of the second main electrode 2M may protrude more outward in the direction than the end of the second low-reflection electrode 2MTO.

[0156] That is, since less MoTi included in the second main electrode 2M is etched in the etching process than molybdenum tantalum oxide (MTO) included in the second low-reflection electrode 2MTO, the end of the second main electrode 2M can protrude more in the outward direction than the end of the second low-reflection electrode 2MTO.

[0157] like Figure 7 and Figure 8 As shown, the outer portion of the first region C1 at the end of the second main electrode 2M that does not overlap with the first electrode 1ME can be covered by black material BM. In this case, the outer portion of the second region C2 at the end of the second main electrode 2M that overlaps with the first electrode 1ME, the black material BM, and the second main electrode 2M can be covered as follows: Figure 7 The layer shown is covered by a passivation layer 104, and the passivation layer 104 may be covered by a planarization layer 105.

[0158] However, as Figure 8 As shown, when there is no second region overlapping with the first electrode 1ME at the end of the second main electrode 2M, the second main electrode 2M and the black material BM included in the first region C1 can be covered by the passivation layer 104, and the passivation layer 104 can be covered by the planarization layer 105.

[0159] Finally, the distance between the end of the second main electrode 2M and the end of the second low-reflection electrode 2MTO can be greater than the distance between the end of the first main electrode 1M and the end of the first low-reflection electrode 1MTO.

[0160] That is, since less of the MoTi included in the second main electrode 2M is etched than the molybdenum tantalum oxide (MTO) included in the second low-reflection electrode 2MTO, the end of the second main electrode 2M can protrude more in the outward direction than the end of the second low-reflection electrode 2MTO.

[0161] However, the etching characteristics of copper included in the first main electrode 1M are almost similar to those of molybdenum tantalum oxide (MTO) included in the first low-reflection electrode 1MTO.

[0162] Therefore, the distance between the end of the second main electrode 2M and the end of the second low-reflection electrode 2MTO can be greater than the distance between the end of the first main electrode 1M and the end of the first low-reflection electrode 1MTO.

[0163] The outer portion of the first region C1 at the end of the second main electrode 2M that does not overlap with the first electrode 1ME may be covered by a black material BM. The outer portion of the second region C2 at the end of the second main electrode 2M that overlaps with the first electrode 1ME, the black material BM, and the second main electrode 2M may be covered by a passivation layer 104, and the passivation layer 104 may be covered by a planarization layer 105.

[0164] However, as Figure 8 As shown, when there is no second region overlapping with the first electrode 1ME at the end of the second main electrode 2M, the second main electrode 2M and the black material BM included in the first region C1 can be covered by the passivation layer 104, and the passivation layer 104 can be covered by the planarization layer 105.

[0165] As described above, according to this disclosure, since the outer portion of the first region C1 at the end of the second main electrode 2M that does not overlap with the first electrode 1ME is covered by the black material BM, no external light reflection occurs in the first region C1, thereby enhancing the quality of the light-emitting display device.

[0166] Figure 10 It shows along Figure 6 Another example of a cross-sectional view taken by line A-A'.

[0167] As described above, the second main electrode 2M included in the second electrode 2ME may comprise a metallic material with an etching rate lower than that of the second low-reflection electrode 2MTO. In this case, as referenced above... Figures 7 to 9 As described, the end of the second main electrode 2M may not be covered by the second low-reflection electrode 2MTO and may be exposed, therefore, as Figure 9 As shown, light reflection may occur at the end of the second main electrode 2M.

[0168] However, the above phenomenon may also occur in the first electrode 1ME and the second electrode 2ME.

[0169] For example, when the first electrode 1ME includes a first main electrode 1M and a first low-reflection electrode 1MTO, when the first main electrode 1M includes a metal material with an etching rate lower than that of the first low-reflection electrode 1MTO, light may be reflected in the first electrode 1ME.

[0170] In this case, such as Figure 10 As shown, the black material BM can be disposed at the end of the first electrode 1ME, so that light passing through the end of the first electrode 1ME will not be reflected.

[0171] In this case, an insulating layer such as silicon oxide (SiO2) can be patterned and disposed below the first low-reflection electrode 1MTO, or it can be disposed as a single layer.

[0172] For the purpose of providing additional description, this disclosure can be applied to various situations where, when a metal electrode is formed of a low-reflectivity electrode and a metal material, the end of the metal material is not covered by the low-reflectivity electrode due to the difference in etching rates between the low-reflectivity electrode and the metal material.

[0173] According to this disclosure, since the low-reflection electrode is disposed below the main electrode, the reflected light reflected from the lower end of the main electrode to the outside can be reduced.

[0174] In this case, the area on the outer part of the main electrode that is not covered by the low-reflection electrode can be covered with a black material. Therefore, the reflected light from the outer part of the main electrode can be reduced.

[0175] Therefore, reflected light from the light-emitting display device can be removed or reduced, thus enhancing the image quality of the light-emitting display device even without a polarizing film.

[0176] The features, structures, and effects described above are included in at least one aspect of this disclosure, but are not limited to only one aspect. Furthermore, the features, structures, and effects described in at least one aspect of this disclosure can be implemented by those skilled in the art through combinations or modifications of other aspects. Therefore, anything related to combinations and modifications should be interpreted as being within the scope of this disclosure.

[0177] It will be apparent to those skilled in the art that various modifications and variations may be made to this disclosure without departing from the spirit or scope thereof. Therefore, this disclosure is intended to cover such modifications and variations as long as they fall within the scope of the appended claims and their equivalents.

[0178] Cross-references to related applications

[0179] This application claims priority to Korean Patent Application No. 10-2021-0194755, filed on December 31, 2021, the entirety of which is incorporated herein by reference.

Claims

1. A light-emitting display device, the light-emitting display device comprising: substrate; A pixel driving circuit layer is disposed in the substrate and includes driving transistors; A planarization layer is disposed on the pixel driving circuit layer; as well as An anode electrode, which is disposed on the planarization layer and connected to the driving transistor of the pixel driving circuit layer. The pixel driving circuit layer further includes a first main electrode and a second main electrode disposed on the first main electrode, and an insulating layer is provided between the first main electrode and the second main electrode. A first low-reflection electrode is disposed below the first main electrode; A second low-reflection electrode is disposed below the second main electrode, wherein the first end of the second main electrode protrudes further than the first end of the second low-reflection electrode; and A black material is used to cover the first end of the second main electrode that does not overlap with the first main electrode and the first low-reflection electrode.

2. The light-emitting display device according to claim 1, wherein, The first low-reflection electrode and the second low-reflection electrode comprise oxide metals.

3. The light-emitting display device according to claim 1, wherein, The first main electrode and the first low-reflection electrode constitute the first electrode, and the second main electrode and the second low-reflection electrode constitute the second electrode. The insulating layer is disposed between the first electrode and the second electrode.

4. The light-emitting display device according to claim 3, further comprising a passivation layer covering the black material and the second electrode.

5. The light-emitting display device according to claim 4, wherein, The passivation layer covers the second end of the second electrode that overlaps with the first electrode.

6. The light-emitting display device according to claim 3, wherein, The black material further covers the second end of the second main electrode, which protrudes more than the second end of the second low-reflection electrode and does not overlap with the first main electrode and the first low-reflection electrode.

7. The light-emitting display device according to claim 6, further comprising a passivation layer covering the black material and the second electrode. in, The passivation layer is covered by the planarization layer.

8. The light-emitting display device according to claim 1, wherein, The distance between the end of the second main electrode and the end of the second low-reflection electrode is greater than the distance between the end of the first main electrode and the end of the first low-reflection electrode.

9. The light-emitting display device according to claim 3, further comprising a black material covering the outer portion of the first electrode when the etching rate of the first main electrode is lower than the etching rate of the first low-reflection electrode.

10. The light-emitting display device according to claim 1, wherein, The etching rate of the second main electrode is lower than that of the second low-reflection electrode.

11. The light-emitting display device according to claim 10, further comprising a black material covering both ends of the first main electrode when the etching rate of the first main electrode is less than the etching rate of the first low-reflection electrode.

12. A light-emitting display device, the light-emitting display device comprising: substrate; A first low-reflection electrode is disposed on the substrate; A first main electrode is disposed on the first low-reflection electrode; An insulating layer is disposed on the substrate and covers the first low-reflection electrode and the first main electrode; A second low-reflection electrode is disposed on the insulating layer; The second main electrode is disposed on the second low-reflection electrode, and the first end of the second main electrode protrudes more than the first end of the second low-reflection electrode. as well as A black material covers the first end of the second main electrode that does not overlap with the first main electrode and the first low-reflection electrode.

13. The light-emitting display device according to claim 12, further comprising a passivation layer covering the black material and the insulating layer.

14. The light-emitting display device according to claim 12, wherein, The second end of the second main electrode protrudes more than the second end of the second low-reflection electrode, and The second end of the second main electrode overlaps with the first low-reflection electrode and the first main electrode.

15. The light-emitting display device according to claim 12, wherein, The two ends of the first main electrode protrude more than the two ends of the first low-reflection electrode, and The two ends of the first main electrode are covered with a black material.

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