Gas inlet mechanism for a CVD reactor having two feed-in positions

Abstract

This invention relates to a method for depositing at least one layer on at least one substrate. A first gas flow containing an active gas is fed into a gas distribution volume of an inlet mechanism through a first inlet, and a second gas flow is fed into the gas distribution volume of the inlet mechanism through a second inlet. The inlet mechanism has an exhaust surface facing a processing chamber, and the exhaust surface has a plurality of exhaust ports fluidly connected to the gas distribution volume. The active gas enters the processing chamber through these exhaust ports. The substrate is arranged in the processing chamber such that the reaction products of the active gas entering the processing chamber form a layer on the surface of the substrate. Two gas flows are provided and fed into the same gas distribution volume, thereby forming regions with different concentrations of active gas within the gas distribution volume. To avoid non-uniformity in layer thickness caused by substrate warping, according to the invention, active gas with different concentrations in the carrier gas is fed into the gas distribution volume at different locations through the inlets.

Description

Technical Field

[0001] The present invention relates to a method for depositing at least one layer on at least one substrate, wherein a first gas flow containing at least one active gas is fed into at least one gas distribution volume of an inlet mechanism through at least one first inlet, and at least one second gas flow is fed into at least one gas distribution volume of the inlet mechanism through at least one second inlet, wherein the inlet mechanism has an exhaust surface facing a processing chamber, the exhaust surface having a plurality of exhaust ports fluidly connected to the gas distribution volume, the active gas entering the processing chamber through these exhaust ports, and the substrate is arranged in the processing chamber such that the products of a physical or chemical reaction of the active gas entering the processing chamber form a layer on the surface of the substrate, wherein the two gas flows are provided and fed into the same gas distribution volume, thereby forming regions with different concentrations of active gas within the gas distribution volume.

[0002] The present invention also relates to an apparatus for depositing at least one layer on at least one substrate, the apparatus having an inlet mechanism having an exhaust surface facing the processing chamber, the exhaust surface having a plurality of exhaust ports fluidly connected to a gas distribution volume of the inlet mechanism, the apparatus further having a base having a bearing side facing the processing chamber for receiving the substrate to be coated, and the apparatus further having a gas mixing system having a mass flow controller, at least one gas source for an active gas and at least one gas source for a carrier gas, the gas mixing system being able to provide a first gas flow containing the active gas and feed the first gas flow into a first input line, the first input line being connected to the gas distribution volume through at least one first inlet, and the gas mixing system being able to provide a second gas flow and feed the second gas flow into a second input line, the second input line being connected to the same gas distribution volume through a second inlet. Background Technology

[0003] Document US 2007 / 0218200 A1 describes a method and apparatus for depositing a layer on a substrate, wherein a first gas flow containing an active gas is fed into a gas distribution volume of an inlet mechanism in a central region. A dilution gas is fed into multiple peripheral locations of the same gas distribution volume.

[0004] Document US 2016 / 0194756 A1 describes a method and apparatus in which a first airflow is fed into a gas distribution volume of an intake mechanism in a central region through a first air inlet. A second airflow can be fed into the central region through a plurality of second air inlets.

[0005] The active gas and the carrier gas are fed into the processing chamber together through an inlet mechanism. This device and method are also known from documents US 6,756,235 B1, US 2018 / 350562, US 2017 / 194172, US 2018 / 135177, WO 2017 / 200696, US 2016 / 340781, US 2016 / 020074, US 2013 / 299009, US 2011 / 033638, US 2007 / 251642, WO2006 / 020424, WO 01 / 04931, US 6,161,500, EP 0 821 084 and EP 0 550 058. Prior art includes CVD reactors with an inlet mechanism in the form of a showerhead. One or more gas distribution volumes are located within the inlet mechanism, extending over the entire surface of the exhaust surface or only over a section or local segment of the exhaust surface. An inlet conduit leads into the gas distribution volume, through which process gas can be fed. The process gas can be a mixture of an active gas and a carrier gas or an inert gas. The process gas is substantially uniformly distributed within the gas distribution volume so that it can enter the processing chamber through the exhaust port of the exhaust surface in a uniformly distributed small flow. The process gas is uniformly distributed within the gas distribution volume. Arrangements of the gas distribution volumes are known in the prior art, in which multiple gas distribution volumes are arranged concentrically around the geometric center of the inlet mechanism or arranged parallel to each other in a strip-like pattern. Different process gases, especially those differing only in the mixing ratio of the active gas and the carrier gas, can be fed into different gas distribution volumes. This arrangement of the gas distribution volumes allows for the regulation of the concentration gradient of the active gas within the carrier gas in the processing chamber. At the boundaries of the gas distribution volumes, significant concentration differences of the active gas in the processing gas within the chamber may occur.

[0006] In an apparatus for depositing III-V layers, such as GaN or GaAlN layers or layer systems, process gas is fed into a processing chamber through an exhaust port, in which a substrate is arranged. The substrate rests on a heated pedestal. Multiple layers can be deposited in successive process steps. The process steps can be performed at different temperatures. In some methods, only a single substrate may be present on the pedestal, concentrically arranged relative to the exhaust surface. It has been observed that the heat loading from the heated pedestal causes the substrate to bend. The central region of the substrate may arch away from or towards the exhaust surface. In both cases, the distance between the substrate surface and the exhaust surface changes in the central region. The situation differs in the central region and in the peripheral region. This causes the layer to deposit at a different growth rate in the central region than in the peripheral region. Depending on the direction of the arching, the deposited layer may be thinner or thicker in the central region than in the peripheral region. Summary of the Invention

[0007] The technical problem to be solved by the present invention is to provide a means by which radial non-uniformity of layer thickness caused by arching can be offset. Furthermore, the technical problem to be solved by the present invention is to provide a measure by which a gentle concentration gradient of the active gas in the processing gas in the processing chamber can be adjusted.

[0008] The technical problem described herein is solved by a method for depositing at least one layer on at least one substrate and an apparatus for depositing at least one layer on at least one substrate.

[0009] Firstly, it is primarily suggested that a first air inlet connects to a gas distribution volume, through which a first gas flow containing at least one active gas can be fed into the gas distribution volume, and a second air inlet connects to the same gas distribution volume, through which a second gas flow can be fed into the gas distribution volume. According to the first aspect of the invention, the two gas flows contain different active gases or have different concentrations of the same active gas. According to the second aspect of the invention, one or more first air inlets are arranged in a central region, and a plurality of second air inlets are arranged in a peripheral region. Here, the first and second air inlets are arranged and the first and second gas flows are adjusted such that the gas flow exiting the air inlets has a constant concentration of active gas in the carrier gas in the circumferential direction relative to the center of the exhaust surface. However, the concentration of active gas in the carrier gas should vary radially relative to the center. With this design and by this process implementation, for example, the partial pressure of the third component in the processing chamber can be adjusted radially, such that the partial pressure in the central region is higher or lower than the partial pressure in the peripheral region depending on the direction of the substrate's curvature, thereby allowing the growth rate in the central region to be greater or less than the growth rate in the peripheral region. Therefore, it is recommended to provide at least two inlets in the gas distribution volume, through which gases or gas mixtures with different compositions are fed into the gas distribution volume. This results in the gases not being uniformly mixed within the gas distribution volume, but rather forming regions with different concentrations of at least one active gas within the gas distribution volume. Thus, in these regions with different concentrations of active gas, gas streams of different concentrations of active gas enter the processing chamber through exhaust ports corresponding to these regions. Preferably, there are no partition walls, flow barriers, or regions with reduced cross-sections between the two inlets, thereby creating a gentle concentration gradient within the gas distribution volume between these regions. However, it is also possible to specify that a throttling plate extends within the gas distribution volume; the throttling plate may be, for example, a perforated plate or a glass frit made of a porous, gas-permeable material. This creates a flat concentration gradient in the processing chamber. In a preferred embodiment of the invention, it is recommended that the additional gas include a second active gas. The second active gas may be the same as the first active gas, or may have different elements from the same group. The second active gas may also differ from the first active gas in other respects. Furthermore, it can be specified that the other gas is either a carrier gas or an inert gas. However, a preferred variation is that the same active gas, diluted differently in the carrier gas, is fed into the gas distribution volume through two inlets. Therefore, the present invention relates to an apparatus and method in which the same, however, active gases with different mixing ratios of active gas relative to the carrier gas are fed into the same gas distribution volume at two different locations, thereby creating a concentration gradient within the gas distribution volume.It can also be specified that the gas distribution volume has a geometric center, and one or more first air inlets are arranged at or around the geometric center. One or more second air inlets can be arranged away from the geometric center. One or more gas distribution elements can be arranged within the gas distribution volume. A first airflow can be fed into the gas distribution volume at a first feed position. The feed position can constitute an air inlet. However, gas distribution elements forming multiple air inlets can also communicate with the feed position. One or more additional gas distribution elements can be arranged around the first feed position, through which a second airflow can be fed into the gas distribution volume. The second airflow is fed into the gas distribution elements at a second feed position. The gas distribution elements enter the gas distribution volume through air inlets formed by the gas distribution elements. These openings can extend around the geometric center in a ring-shaped arrangement. However, multiple additional feed positions can also be provided, which are arranged in a uniform circumferential distribution around the geometric center at uniform distances from the geometric center, wherein additional gas can be directly fed into the gas distribution volume at the additional feed positions. However, the gas can also be fed into a gas distribution element that distributes additional gas planarly or linearly within a gas distribution volume. Process gas can also be partially fed at the first feeding location. Alternatively, feeding can be made into a gas distribution element arranged therein that distributes the first process gas over a large area in the central region of the gas distribution volume. In particular, the gas distribution element is arranged such that a radial concentration gradient of the active gas is generated within the gas distribution volume, wherein an azimuthal concentration gradient may also be eliminated. The apparatus or method according to the invention is particularly suitable for depositing Group IV-IV, Group III-V, or Group II-VI layers on a large-area substrate. A substrate with an area only slightly smaller than the exhaust surface is preferred. The exhaust surface preferably extends at least over the entire surface of the substrate. The cross-section of the gas distribution volume can extend over the entire exhaust surface. A variation of the invention may specify that two or more gas distribution volumes extend over a localized area of ​​the exhaust surface. It can also be specified that each of one or more gas distribution volumes has a first feed position and at least one additional feed position, at which gas mixtures of different compositions can be fed. Prior art describes an intake mechanism in which multiple gas distribution volumes extend side-by-side in a strip-like manner. Processing gases of different compositions can be fed into these parallel gas distribution volumes at different feed positions to produce the aforementioned effect in the processing chamber. For example, it can be specified that a central, elongated gas distribution volume extends through or approximately through the geometric center of the intake mechanism. A first feed position can be provided at the center of this central gas distribution volume, and second feed positions can be provided at each of the two ends of the gas distribution volume.These two feed positions can each form an air inlet. However, it is also possible to specify that a gas distribution element with an air inlet is provided at the feed position. Adjacent to these central gas distribution volumes, other similarly designed elongated gas distribution volumes extend to the edge of the intake mechanism. Each of these gas distribution volumes can have a central feed position and feed positions at both ends. Active gases with different compositions or concentrations in the carrier gas can be fed in through two second feed positions preferably arranged at the edge of the intake mechanism. The invention can also be implemented in an intake mechanism in which multiple partial gas volumes are arranged concentrically. According to the invention, the feed position or the gas distribution element fluidly connected to the feed position is arranged such that the gas flow exiting from the exhaust port of the exhaust surface has a different concentration of active gas radially relative to the center of the exhaust surface. The feed position or the gas distribution element associated with the feed position can also be arranged such that the gas flow exiting from the exhaust port has a constant concentration of active gas azimuthally relative to the center of the exhaust surface. However, it is also possible to specify that multiple feed points or gas distribution elements fluidly connected to the input lines flowing into the feed points are arranged such that the gas flow exiting the exhaust port has different concentrations of reactive gas over the surface extension of the exhaust surface. It has proven advantageous for the reactive gas to be supplied by a common gas source. The reactive gas is guided from the gas mixing system to the CVD reactor through the input lines. The input lines can branch. A first branch can enter a gas distribution volume or gas distribution element at a first feed point. A second branch can enter a gas distribution volume or gas distribution element at a second feed point. An additional carrier gas flow can be fed into the second branch by means of a mass flow controller, thereby diluting the process gas fed through the second branch relative to the process gas fed through the first branch. However, dilution can also be achieved through the process gas flow fed through the first branch. However, it is preferable to feed the diluted gas into an annular region spaced from the center. The annular region can have annular or horseshoe-shaped gas distribution elements. Multiple concentrically arranged annular zones can be configured, for example, by feeding diluted reactive gas into the annular zones via gas distribution elements or by inlet lines introduced therein. An electronic control device can be provided to control valves and mass flow controllers. The control device can be programmable and also controls heating devices or vacuum pumps. In an extended design of the invention, the gas mixing system can be specified to provide process gas to two reactors. A mass flow controller can be provided to supply the mass flow of reactive gas. A further mass flow controller can be used to mix carrier gas into the mass flow of reactive gas.This gas flow can be fed into a single gas distribution volume at the first feed point, or it can be divided into two gas flow streams and fed into multiple, particularly two, gas distribution volumes at the feed point, wherein the gas distribution volumes belong to different reactors. The gas mixing system also provides a small amount of additional carrier gas flow in a corresponding manner, which is fed into another branch of the process gas input line, which is introduced at another feed point so that diluted process gas is fed into the gas distribution volume there. The dilution ratio is preferably about 1 to 10% or 2 to 10%.

[0010] In a variant of the invention, the gas distribution volume can be divided into an upper section and a lower section. This division is achieved by means of the aforementioned throttling plate, which is permeable to gas; however, a small pressure difference is required between the upper and lower sections to allow gas to pass through the throttling plate. According to a variant of the invention, all inlets or all gas distribution elements can be arranged in the upper section. In this variant, the same, but with different concentrations in the carrier gas, reactive gases are fed into the upper section through the inlets or gas distribution elements at different radial distances from the central inlet or the central gas distribution element. Reactive gases involving Group III elements are preferred here. Gases of Group V elements can be fed into another gas distribution volume. According to another variant, the reactive gas, especially along with the carrier gas, is fed only through the central inlet or through the inlet of the central gas distribution element. The carrier gas is fed in solely through additional gas distribution elements arranged around the central inlet or central gas distribution element to dilute the reactive gas in the gas distribution volume. In this variant, the central inlet or central gas distribution element is located in the upper section. Other inlets or gas distribution elements, used solely for feeding inert gas, are located in the lower section.

[0011] According to another variation, a directional airflow flows from the inlet into the gas distribution volume. Here, the airflow may have a directional component pointing parallel to the extension direction of the exhaust surface. The gas distribution volume may have an upper wall. The directional component of the airflow may extend parallel to the extension direction of the upper wall. The airflow may extend generally parallel to the extension direction of the upper wall. According to another variation, the airflow exiting the inlet may have a directional component pointing towards the upper wall. The airflow may point obliquely towards the upper wall. The airflow thus may have a directional component in a direction away from the exhaust surface, and simultaneously have a directional component along the extension direction of the exhaust surface. The inlet is preferably regularly arranged in the outer peripheral region around the geometric center of the exhaust surface. Attached Figure Description

[0012] The embodiments of the present invention will now be described with reference to the accompanying drawings. In the drawings:

[0013] Figure 1 The first embodiment of the present invention is shown in the schematic diagram of the longitudinal section obtained by cutting CVD reactor 1.

[0014] Figure 2 Showing according to Figure 1 The cross-sectional view obtained by cutting along line II-II.

[0015] Figure 3 The corresponding second embodiment is shown. Figure 1 The illustration,

[0016] Figure 4 The corresponding second embodiment is shown. Figure 2 The illustration,

[0017] Figure 5 The corresponding third embodiment is shown. Figure 1 The illustration,

[0018] Figure 6 Showing according to Figure 5 The top view of arrow VI in the image.

[0019] Figure 7 The corresponding fourth embodiment is shown. Figure 1 The illustration,

[0020] Figure 8 Showing according to Figure 7 The cross-sectional view obtained by cutting along line VIII-VIII in the middle.

[0021] Figure 9 The corresponding fifth embodiment is shown. Figure 1 The illustration,

[0022] Figure 10 Showing according to Figure 9 The cross-sectional view obtained by cutting along line XX in the middle.

[0023] Figure 11 The corresponding sixth embodiment is shown. Figure 1 The illustration,

[0024] Figure 12 Showing according to Figure 11 The cross-sectional view obtained by cutting along line XII-XII in the middle.

[0025] Figure 13 A schematic diagram of the seventh embodiment is shown.

[0026] Figure 14 The eighth embodiment is shown schematically.

[0027] Figure 15 In the corresponding Figure 1 The diagram shows the ninth embodiment.

[0028] Figure 16 In the corresponding Figure 1 The diagram shows the tenth embodiment.

[0029] Figure 17 In the corresponding Figure 1 The diagram shows the eleventh embodiment. Detailed Implementation

[0030] The embodiments described relate to apparatuses having at least one CVD reactor 1, which is supplied with processing gas by a gas mixing system and equipped with a gas handling system (not shown), which may include a pump and a gas cleaning device. The CVD reactor 1 has an outwardly airtight shell with shell walls 2 forming a cavity. Within the evacuable cavity of the reactor shell 1 is a graphite base 3, which supports one or more substrates 4 to be coated on its upward-facing side. Below the base 3, designed as a circular disk, is a heating device 5 capable of heating the base 3 to a processing temperature of 500 to 1000°C or higher.

[0031] The processing chamber 8 extends above the base 3, and the processing gas is fed into the processing chamber. This is achieved by an exhaust surface 6' that partially forms the top of the processing chamber 8, which in this embodiment is formed by a shielding plate 9. However, a diffuser plate can also be arranged there instead of the shielding plate. Alternatively, the exhaust surface 6' can be formed directly by the base plate of the intake mechanism 10.

[0032] In the embodiment described, the intake mechanism 10, extending directly above the shielding plate 9, is constructed of a hollow body having at least one gas distribution volume 11. In this embodiment, the intake mechanism 10 has an additional gas distribution volume 13 extending below the gas distribution volume 11. A coolant chamber 14, through which coolant flows, is adjacent to the base plate of the intake mechanism 10. Each of the two chambers constituting the gas distribution volumes 11 and 13 is fluidly connected to the exhaust surface 6' via pipes 17 and 20, allowing the processed gas fed into the gas distribution volumes 11 and 13 to flow out from the exhaust surface 6' with a uniform fluid distribution. The processed gas enters the processing chamber 8 and flows radially through the processing chamber 8 to the exhaust mechanism 6, which annularly surrounds the processing chamber 8 and is connected to the gas processing system via an exhaust port 7. Different active gases can be fed into the two gas distribution volumes 11 and 13, respectively, along with the carrier gas; these two gas distribution volumes are shown only schematically in the figures. The active gases enter the processing chamber 8 through pipes 17 and 20, where they decompose or react with each other, causing a layer composed of the reaction products of the active gases to be deposited on the surface of the substrate.

[0033] An active gas containing a Group III element can be fed into gas distribution volume 11 along with an inert gas, such as hydrogen. The inert gas constitutes the carrier gas. An active gas containing a Group V element can be fed into gas distribution volume 13 along with an inert gas, such as hydrogen. A chemical reaction between the two active gases can occur in the gas phase above substrate 4 or on the surface of substrate 4, thereby depositing a layer composed of Group III and Group V elements on the surface of substrate 4. The growth rate is determined here by the partial pressure of the Group III active gas on the substrate surface or by the mass flow of the Group III active gas exiting from the exhaust surface; the active gas can be an organometallic compound.

[0034] The present invention will now be described in more detail with reference to gas distribution volume 11:

[0035] exist Figures 1 to 8 and Figures 15 to 17 In the first to fourth and ninth to eleventh embodiments shown, the gas distribution volume 11 extends over the entire circular exhaust surface 6'. Exhaust ports 16, or corresponding pipes 16, are evenly distributed over the entire exhaust surface 6'. Inlet pipes 35, 36, and 38 enter the gas distribution volume 11 at at least two different feed positions 12, 23, and 26, allowing the processed gas to be fed into the gas distribution volume 11 at different locations. The processed gas enters the gas distribution volume 11 through inlets 25, 28, and 39. Figures 1 to 8In the described embodiment, the gas distribution volume has a constant height over its entire surface extension and does not have intermediate walls or other elements that impede the diffusion of gas within the gas distribution volume 11. Figures 15 to 17 The illustrated embodiment includes an intermediate wall, diffusion barrier, or flow barrier 40 to slow molecular migration from one region of the gas distribution volume 11 to another. It is also specified that each different feed location 12, 23, 26 corresponds to a region fluidly connected to other regions.

[0036] A mixture of active gas and carrier gas is fed into different feed positions 12, 23, and 26, respectively, wherein the mixing ratio between the active gas and the carrier gas or inert gas is different at the feed positions 12, 23, and 26.

[0037] The mixing ratio is adjusted by a gas mixing system. This system has a gas source 30 for the active gas and a gas source 31 for the carrier gas or inert gas. The active gas can be an organometallic compound of an element from Group II, III, or IV. It can also be a hydride of an element from Group IV, V, or VI. The active gas is preferably a mixture of these gases. The inert gas can be hydrogen, nitrogen, or a rare gas. The mass flow of the active gas is provided by a mass flow controller 32 and diluted by means of the carrier gas and the mass flow controller 33. The mass flow thus provided for the process gas is branched into an input line 35 at the central inlet position 12, which enters into the gas distribution volume 11, and into an input line 36 at the peripheral inlet positions 23, which also enters into the gas distribution volume 11. The carrier gas flow is fed into the input line 36 by means of the mass flow controller 34, thereby diluting the process gas fed into the peripheral inlet positions 23 relative to the process gas fed into the central inlet position 12.

[0038] exist Figure 1 and Figure 2 In the illustrated embodiment, a gas distribution element 24 extends within a gas distribution volume 11. The gas distribution element has an annular shape and can be designed as a tube bent into an annular shape. An air inlet 25 is provided on the wall of the gas distribution element 24, which feeds the processed gas from the surrounding air inlet positions 23 into an annular region surrounding the geometric center of the gas distribution volume 11.

[0039] like Figure 1As shown, at the inlet position 12, a single pipe can lead into the gas distribution volume 11. The inlet position 12 here constitutes an inlet 39. However, it is also possible for multiple pipes to lead into the gas distribution volume 11 at its center. A first gas flow of the mixture of carrier gas and reactive gas can flow into the gas distribution volume 11 through one or more inlets 39. Furthermore, it can be specified that an annular opening or a concentric ring formed by the inlets is arranged at the central inlet position.

[0040] A second gas flow, consisting of a mixture of carrier gas and reactive gas, enters the gas distribution volume 11 through inlet 25. However, the mixing ratio here differs from that of the first gas flow.

[0041] The exhaust port 16 can be located at the corner of the grid, where the grid cells can be designed as rectangles, squares, hexagons, or polygons. Preferably, the exhaust port 16 is located at the corner of a grid composed of identical grid cells. However, the exhaust port 16 can also be arranged on concentric lines around the center of the exhaust surface.

[0042] exist Figure 3 and Figure 4 The main difference between the second embodiment shown and the first embodiment is that a radially inner gas distribution element 27 is arranged between the radially outer gas distribution elements 24, and the radially inner gas distribution element also has a ring shape. The two gas distribution elements 24 and 27 are arranged concentrically relative to the central air inlet position 12. The input pipe 38 enters at the air inlet position 26, and the processed gas diluted in the carrier gas is fed through the input pipe by means of the mass flow controller 37. The dilution degree of the processed gas can be adjusted by means of the mass flow controllers 34 and 37, thereby adjusting to form a radial concentration gradient within the gas distribution volume 11. The radial concentration gradient causes the processed gas with a higher concentration of active gas to be fed into the processing chamber 8 through the exhaust port 16 arranged at the center of the exhaust surface 6', rather than through the peripheral exhaust ports 16.

[0043] In an embodiment not shown, two or more annular zones may be provided within the gas distribution volume 11, where gas distribution elements extending within the respective zones may be provided.

[0044] The air inlets 25 or 28 of the gas distribution elements 24 or 27 may extend transversely to the plane through which the gas distribution elements 24 or 27 extend. The air inlets 25 or 28 may be lateral openings. However, the air inlets 25 or 27 may also open towards the exhaust surface 6'. Therefore, the air inlets 25 or 28 may also be downward-pointing openings. However, the air inlets 25 or 28 may point upwards and thus have a directional component away from the exhaust surface 6'.

[0045] exist Figure 5 and Figure 6 In the illustrated embodiment, a central gas inlet is provided at a central feed position 12, which is located at the geometric center of a gas distribution volume 11 with a generally circular outline. A plurality of feed positions 23 are provided, arranged in a uniform circumferential distribution around the geometric center. Process gases with different mixtures can be directly fed into the gas distribution volume at feed position 12 and the peripheral feed positions 23, respectively.

[0046] exist Figure 7 and Figure 8 In the illustrated embodiment, a central gas distribution element 43 is arranged at the geometric center of the gas distribution volume 11. The central gas distribution element is a looped tube with an inlet 39 disposed on its wall. This tube is supplied by an input conduit (not shown) that enters the gas distribution element 29 at feed position 12. A plurality of gas distribution elements 24 are arranged in a uniform circumferential distribution around the central gas distribution element 43. In this embodiment, these gas distribution elements are also looped tubes with openings 25 in their walls. The same processing gas, i.e., the same mixture of the active gas and the carrier gas, can be fed into the plurality of peripheral gas distribution elements 24. However, it is also possible to specify that different mixtures of the active gas and the carrier gas are fed into different gas distribution elements 24 at corresponding feed positions 23.

[0047] Gas distribution elements 24, consisting of annular tubes, are arranged at each feed position 23. The gas distribution element 24 is a peripheral gas distribution element 24 that extends in the outer peripheral region around the central gas distribution element 43 having an air inlet 39.

[0048] exist Figure 9 and Figure 10 In the illustrated embodiment, the intake mechanism 10 has a plurality of gas distribution volumes 11 arranged in a strip-like pattern. The middle gas distribution volume 11 extends radially through the center of the circular intake mechanism 10. The other gas distribution volumes 11 are respectively adjacent to the two longitudinal sides of the elongated gas distribution volume 11. A plurality of elongated gas distribution volumes 11 extending across the entire exhaust surface 6' are arranged side by side.

[0049] Each gas distribution volume 11 has a first feed position 12, 12' at its center, at which process gas can be fed into the corresponding gas distribution volume. In addition to the external gas distribution volumes 11, each gas distribution volume 11 also has additional feed positions 23 at its two ends located at the edge of the exhaust surface 6', at which process gases with different mixtures can be fed.

[0050] The central feed position 12 corresponds to the inlet 39 for feeding the first airflow. The feed positions 23 correspond to the inlets 25 for feeding the second airflow. The central feed positions 12, 12', and 12" can be supplied by a common input line. The feed positions 23 can also be supplied by a common input line.

[0051] In the foregoing embodiments, the base 3 is on the single, large-area substrate 4; however, in other embodiments not shown, the base 3 is on... Figure 11 Multiple substrates 4 are arranged as shown, and this embodiment is otherwise consistent with the previous embodiment.

[0052] Figure 11 and 12 The main difference between the illustrated embodiment and the previous embodiment lies in the shape of the gas distribution element 24, which is horseshoe-shaped. Alternatively, multiple gas distribution elements 24 may be arranged concentrically with respect to the geometric center of the gas distribution volume 11.

[0053] In this embodiment, different processing gases can be fed into two feed positions 12 and 23. For this purpose, additional mass flow controllers 32' and 33' are provided to generate a mixture of an active gas supplied by gas source 30' and a carrier gas supplied by gas source 31. This processing gas mixture is fed into a gas distribution element 24 at feed position 23 via an input line 35'. The gas distribution element 24 has a plurality of evenly arranged inlets 25, which point both laterally and downward.

[0054] The figure also shows a control device 42, which can be used to control mass flow controllers 32, 37, and 34, or gas sources 30 and 31, or heating device 5. The control device 42 can control the airflow to adjust the concentration of the active gas, as described above and below, in the processing chamber.

[0055] Figure 13 The illustrated embodiment shows a modified gas mixing system in which a mixture of active gas and carrier gas is generated by means of mass flow controllers 32 and 33. The mixture is fed into a multi-branched input line. The input line first branches into input line 35, which enters the gas distribution volume 11 of the first CVD reactor 1 at feed position 12, and then branches into input line 35', which enters the gas volume 11 of the second CVD reactor 1'.

[0056] Two mass flow controllers 34 and 37 are provided, through which carrier gas is supplied. This carrier gas is fed into input lines 36 or 38 for dilution of the process gas. Input lines 36 or 38 respectively connect to the gas distribution volume 11 at feed point 23. CVD reactors 1 and 1' can be configured as follows: Figures 1 to 11 The design shown is as follows.

[0057] Figure 14 The illustrated embodiment shows another variation of the gas mixing system, wherein only the carrier gas is fed into the gas distribution volume 11 at the peripheral feed point 23.

[0058] Figure 15 An embodiment is shown, which is related to Figure 1 The main difference in the illustrated embodiment is that the air inlet 25 is angled toward the upper wall 44 of the gas distribution volume 11. Furthermore, Figure 15 A measuring device 41, such as an optical measuring device, is shown, which can determine the curvature of the substrate 4; the measuring device can provide the measured value to a control device 42. Depending on the degree of curvature 4, the mixing ratio of the active gas and the carrier gas in the gas flow to each individual feed position 12, 23 can be changed by the control device 42. Therefore, it is stipulated that during the deposition process, the gas flow mixing ratio is changed by the control device 42, whereby this change can depend on the measured curvature of the substrate 4. However, the mixing ratio can also depend on the type of the corresponding process step. The curvature can reach 0.5 to 1 mm.

[0059] Figure 16 Another variation is shown, in which multiple annular gas distribution elements 24 are arranged around a central annular gas distribution element 43. A first airflow can be fed into the upper section of the gas distribution volume 11 through the inlet 39 of the central annular gas distribution element 43, and one or more second airflows can be fed into the upper section of the gas distribution volume 11 through the inlets 25 of the peripheral gas distribution elements 24. The upper section is separated from the lower section by a throttling plate 40. The lower section is fluidly connected to the exhaust surface 6' via a pipe 17. Figure 16 In the illustrated embodiment, all gas distribution elements 24, 43 are located in the upper section. A mixture of active and inert gases is fed through each gas distribution element 24, 43, however, the mixing ratios differ. Gas distribution elements 24, 43 may be located in a common plane.

[0060] exist Figure 17In the illustrated embodiment, the gas distribution volume 11 is divided into an upper section and a lower section by a throttling plate 40. A gas distribution element 43 is arranged in the upper section, through which both active and inert gases are fed into the upper section. A plurality of annular gas distribution elements 24, located in a common plane, are arranged in the lower section. The gas distribution elements 24 are located in a different plane than the gas distribution elements 43. In this embodiment, the gas distribution elements 24 arranged in the lower section ensure that only the carrier gas can be fed into the lower section of the gas distribution volume 11 as a means of diluting the treatment gas.

[0061] In the embodiments described, the gas distribution element is shown as an annularly closed tube or a horseshoe-shaped tube. However, the gas distribution element may also have different shapes, such as cavities surrounded by walls with openings, thereby enabling the feed of process gas into the gas distribution volume over a larger surface area.

[0062] The foregoing embodiments are used to illustrate the invention generally included in this application, which extends the prior art independently by at least the following combinations of features, wherein two, more, or all of these combinations of features can also be combined, namely:

[0063] A method characterized in that a gas other than the processing gas is fed into the same gas distribution volume at at least one second feed position 23, 26, such that a region with a different concentration of active gas is formed within the gas distribution volume 11.

[0064] An apparatus characterized in that the connecting portions of the feed positions 23, 26 are arranged such that the mass flow controllers 32, 33, 34, 37 are connected such that regions with different concentrations of active gas are formed within the gas distribution volume 11.

[0065] A method characterized in that the two airflows contain different active gases or have different concentrations of the same active gas in the carrier gas.

[0066] A method characterized in that the first and second air inlets 39, 25, 28 are arranged such that the first and second airflows are regulated such that the airflows exiting from these exhaust ports 16 have a constant concentration of active gas in the carrier gas in the azimuth direction relative to the center of the exhaust surface 6' and have different concentrations of active gas in the carrier gas in the radial direction relative to the center.

[0067] A method characterized in that at least one of the two airflows contains a carrier gas to dilute an active gas, or each of the at least two airflows contains an active gas of different concentrations in the carrier gas.

[0068] A method characterized in that only the carrier gas is fed into the gas distribution volume 11 through the second air inlets 25, 28.

[0069] A method characterized in that the active gas has an element of Group III, and a second active gas having an element of Group V is fed into the second gas distribution volume 13, and both active gases are fed into the processing chamber 8 through the exhaust port 16.

[0070] A method characterized in that gas streams of different concentrations of active gas in a carrier gas are fed into the processing chamber 8 in at least three, four, or five regions arranged concentrically around a center.

[0071] A method characterized in that, during the deposition of at least one layer 4, the concentration of an active gas in at least one of a plurality of gas streams is changed.

[0072] A method characterized in that bending of the substrate 4 is observed during the deposition of the layer, and the concentration of an active gas in at least one of a plurality of gas streams is changed according to the degree of bending of the substrate 4.

[0073] A method characterized in that the gas distribution volume 11 is divided into an upper section and a lower section by a throttling plate 40, wherein the first gas flow is fed into the upper section and the second gas flow is fed into the lower section, or both gas flows are fed into the upper section.

[0074] A method characterized in that a processing gas stream consisting of a carrier gas and an active gas is uniformly divided into one or more gas streams, and an additional carrier gas for dilution is fed into at least one gas stream.

[0075] A method characterized in that the additional carrier gas is at most 2% or 1% of the process gas flow.

[0076] A method characterized by using gas distribution elements 24, 27, 29 for feeding in a first and / or second airflow, the gas distribution elements having a plurality of air inlets 39, 28 through which the airflow enters the gas distribution volume 1, the gas distribution volume having a directional component parallel to the extended plane of the exhaust surface 6' and / or having a directional component pointing away from the exhaust surface 6'.

[0077] An apparatus characterized in that the mass flow controllers 32, 33, 34, and 37 are arranged such that two different reactive gases in the carrier gas or the same reactive gas with different concentrations in the carrier gas are fed into the gas distribution volume 11 through two input lines 35, 36, and 38.

[0078] An apparatus characterized in that a gas source 30 for an active gas is fluidly connected to both a first input line 35 and a second input line 36, 38, and a gas source 31 for carrying gas is fluidly connected to at least one of the first or second input lines 35, 36, 38, or another gas source for the active gas is fluidly connected to the second input lines 36, 38.

[0079] An apparatus characterized in that second air inlets 25, 28, which are fluidly connected to the second input conduits 36, 38, are arranged on concentric lines or in concentric regions around the geometric center of the exhaust surface 6'.

[0080] An apparatus characterized in that one or more second input lines 36, 38 are connected to the gas distribution elements 24, 27, 29, the gas distribution elements being volumes arranged in the distribution volume 11 that form the second air inlets 25, 28, and the one or more gas distribution elements 24, 27, 29 extending in a region concentrically extending around the geometric center of the exhaust surface 6'.

[0081] An apparatus characterized in that the at least one first air inlet 39 is connected to the upper section of the gas distribution volume 11, and the second input pipes 36, 38 are connected to the lower section of the gas distribution volume 11 that is separated from the upper section by a throttling plate 40.

[0082] An apparatus characterized in that the gas distribution volume 11 is connected to the gas source 30, in which an active gas having an element of Group III is stored, and a second gas distribution volume 13, which is fluidly connected to a plurality of exhaust ports 16 arranged in the exhaust surface 6', is connected to the gas source, in which a second active gas having an element of Group V is stored.

[0083] An apparatus characterized in that a first air inlet 39 is associated with a central air inlet position 12, or a plurality of first air inlets 39 are associated with a central gas distribution element 29, and a second air inlet 28 is constituted by at least one gas distribution element 24, 27, 29, which distributes a second airflow into the gas distribution volume in the form of a volume arranged in the gas distribution volume 11, the second airflow being fed into the gas distribution element 24, 27 at at least one air inlet position 23, 26.

[0084] An apparatus characterized in that the first or second air inlet 25, 28, 39 generates an airflow having a flow direction, the airflow having a directional component that is transverse to the flow direction of the airflow flowing from the gas distribution volume 11 to the exhaust surface 6' and / or the directional component points away from the exhaust surface 6'.

[0085] An apparatus characterized in that the gas distribution elements 24, 27 extend along concentric lines around the geometric center of the exhaust surface 6', and the gas distribution elements have a plurality of air inlets 25, 28 communicating with an annular region around the geometric center.

[0086] An apparatus characterized in that two, three, four or five gas distribution elements 29 are arranged concentrically around a central air intake position 12 or around a central air intake mechanism.

[0087] An apparatus characterized in that it is provided with a measuring device 41, which is capable of measuring the bending of a substrate 4, and a control device 42, which changes the concentration of an active gas in a first or second airflow according to the bending of the substrate 4.

[0088] An apparatus characterized in that a first feed position 12 for feeding the first gas flow is arranged in the center of the gas distribution volume 11, and two second feed positions 23 for feeding the second gas flow are respectively arranged at the ends of the gas distribution volume 11.

[0089] All disclosed features (in themselves and in combinations thereof) are inventive or have inventive value. The disclosures of the subordinate / attached priority texts (previous applications) are also fully included in the publication of this application. This invention also relates to design forms in which certain technical features mentioned in the foregoing description cannot be implemented, particularly those that can be identified as unnecessary for the various application purposes or that can be substituted by other technically equivalent devices.

[0090] List of reference numerals

[0091] 1. Reactor shell, CVD reactor

[0092] 1'CVD reactor

[0093] 2 Shell wall

[0094] 3 bases

[0095] 4 substrates

[0096] 5 Heating device

[0097] 6. Exhaust mechanism

[0098] 6' exhaust surface

[0099] 7 air outlets

[0100] 8 processing rooms

[0101] 9 shielding plates

[0102] 10 intake mechanism

[0103] 11 Gas Distribution Volume

[0104] 12. Central air intake position, feed-in position

[0105] 13 Gas Distribution Volume

[0106] 14 Coolant Chambers

[0107] 15 exhaust plates

[0108] 16 exhaust ports

[0109] 17 pipes

[0110] 18 partitions

[0111] 19 exhaust ports

[0112] 20 pipes

[0113] 21 partitions

[0114] 23. External air intake position, feed-in position

[0115] 24 Gas Distribution Elements

[0116] 25 air intake

[0117] 26. External air intake position, feed-in position

[0118] 27 Gas Distribution Element

[0119] 28 air intakes

[0120] 29 Gas Distribution Element

[0121] 30 gas sources, active gases

[0122] 30' gas source, active gas

[0123] 31. Gas source, carrier gas / inert gas

[0124] 32 Mass Flow Controller

[0125] 32' Mass Flow Controller

[0126] 33 Mass Flow Controller

[0127] 33' Mass Flow Controller

[0128] 34 Mass Flow Controller

[0129] 35 Inlet Pipeline

[0130] 35' Inlet Pipe

[0131] 36 Inlet Piping

[0132] 37 Mass Flow Controller

[0133] 38 Inlet Pipes

[0134] 39' air intake

[0135] 40 throttling plate, flow barrier

[0136] 41 Optical measuring equipment

[0137] 42 Control Device

[0138] 43 Gas Distribution Element

[0139] 44 on the wall.

Claims

1. A method of depositing at least one layer on at least one substrate (4), wherein, A first gas flow containing at least one active gas is fed into at least one gas distribution volume (11) of the intake mechanism (10) through at least one first inlet (39), and at least one second gas flow is fed into at least one gas distribution volume (11) of the intake mechanism (10) through at least one second inlet (25, 28), wherein the intake mechanism (10) has an exhaust surface (6') facing the processing chamber (8), the exhaust surface having a plurality of exhaust ports (16) fluidly connected to the gas distribution volume (11), through which the active gas enters the processing chamber (8), wherein the first inlet is arranged at the center of the exhaust surface. In the region, and the second air inlet is arranged in the peripheral region of the exhaust surface, and wherein the substrate (4) is arranged in the processing chamber (8) such that the products of the physical or chemical reaction of the active gas entering the processing chamber (8) form a layer on the surface of the substrate (4), wherein the two airflows are provided, wherein the two airflows contain different active gases or have different concentrations of the same active gas in the carrier gas, characterized in that the bending of the substrate (4) is observed during the deposition of the layer, and the concentration of the active gas in at least one of the first and second airflows is changed according to the degree of bending of the substrate (4).

2. The method of claim 1, wherein, At least one of the two airflows contains a carrier gas to dilute the active gas, or each of the at least two airflows contains an active gas of different concentrations in the carrier gas.

3. The method of claim 1, wherein, The active gas contains elements of Group III, and a second active gas containing elements of Group V is fed into the second gas distribution volume (13), and both active gases are fed into the processing chamber (8) through the exhaust port (16).

4. The method of claim 1, wherein, The flow of different concentrations of active gas in the carrier gas is fed into the processing chamber (8) in at least three concentric regions arranged around the center.

5. The method of claim 1, wherein, During the deposition of at least one layer, the concentration of the active gas in at least one of the multiple gas streams changes.

6. The method of claim 1, wherein, A gas distribution element is used to feed in a first and / or second airflow. The gas distribution element has multiple air inlets through which the airflow enters the gas distribution volume (11). The gas distribution volume has a directional component parallel to the extended plane of the exhaust surface (6') and / or has a directional component pointing away from the exhaust surface (6').

7. An apparatus for depositing at least one layer on at least one substrate (4), the apparatus having an air intake mechanism (10) having an exhaust surface (6') facing a processing chamber (8) having a plurality of exhaust ports (16), the apparatus further having a base (3) having a bearing side facing the processing chamber (8) for receiving the substrate (4) to be coated, and the apparatus further having a gas mixing system having a mass flow controller (32, 33, 34, 37), at least one gas source (30) for an active gas and at least one gas source (31) for a carrier gas, the gas mixing system being able to provide a first airflow containing an active gas and feed the first airflow into a first input conduit (35) having a first air inlet (39), and the gas mixing system being able to provide a second airflow and feed the second airflow into a second input conduit (36, 38) having a second air inlet (25, 28), wherein, The first and second air inlets are connected to at least one gas distribution volume (11) of the air intake mechanism (10), and the exhaust port (16) is fluidly connected to the at least one gas distribution volume (11). The first air inlet is arranged in the central region of the exhaust surface, and the second air inlet is arranged in the peripheral region of the exhaust surface. The mass flow controllers (32, 33, 34, 37) are arranged such that two different active gases or the same active gas with different concentrations in the carrier gas flow through two input pipes (35; 36, 38). The device is characterized by having a measuring device (41) that can measure the curvature of the substrate (4) and a control device (42) that changes the concentration of the active gas in the first or second airflow according to the curvature of the substrate (4).

8. The apparatus of claim 7, wherein, The gas source (30) of the active gas is fluidly connected to both the first input line (35) and the second input line (36, 38), and the gas source (31) of the transport gas is fluidly connected to at least one of the first or second input lines (35; 36, 38), or another gas source of the active gas is fluidly connected to the second input line (36, 38).

9. The apparatus of claim 7, wherein, The second air inlet (25, 28), which is fluidly connected to the second input line (36, 38), is arranged on a concentric line or in a concentric region around the geometric center of the exhaust surface (6').

10. The apparatus of claim 7, wherein, One or more second input lines (36, 38) are connected to a gas distribution element, which is a volume arranged in the gas distribution volume (11) that forms the second air inlet (25, 28), and the one or more gas distribution elements extend in a region that extends concentrically around the geometric center of the exhaust surface (6').

11. The apparatus of claim 7, wherein, The at least one first air inlet (39) is connected to the upper section of the gas distribution volume (11), and the second input line (36, 38) is connected to the lower section of the gas distribution volume (11) that is separated from the upper section by a throttle plate (40).

12. The apparatus of claim 7, wherein, The gas distribution volume (11) is connected to the gas source (30), in which an active gas containing elements of Group III is stored, and the second gas distribution volume is fluidly connected to a plurality of exhaust ports (16) arranged in the exhaust surface (6'), and the second gas distribution volume (13) is connected to the gas source, in which a second active gas containing elements of Group V is stored.

13. The apparatus of claim 7, wherein, The first air inlet (39) is associated with the central air inlet position (12), or multiple first air inlets (39) are associated with the central gas distribution element, and the second air inlet is composed of at least one gas distribution element, which distributes a second airflow into the gas distribution volume in the form of a volume arranged in the gas distribution volume (11), the second airflow being fed into the gas distribution element at at least one air inlet position (23, 26).

14. The apparatus of claim 7, wherein, The first or second air inlet generates an airflow with a flow direction, the airflow having a directional component that is transverse to the flow direction of the airflow flowing from the gas distribution volume (11) to the exhaust surface (6') and / or the directional component points away from the exhaust surface (6').

15. The apparatus of claim 10, wherein, The gas distribution element extends along a concentric line around the geometric center of the exhaust surface (6'), and the gas distribution element has a plurality of second air inlets (25, 28) that communicate with an annular region around the geometric center.

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