Shield and method of manufacturing the same

Abstract

The present application provides a shield, which includes a first surface and a second surface opposite to the first surface, and has a full-etch region and a plurality of clearance regions. The shield has a plurality of through holes in the full-etch region, and each through hole communicates the first surface and the second surface. The plurality of clearance regions are distributed in the full-etch region, and the plurality of through holes of the full-etch region surround each clearance region, wherein each clearance region further has a through hole communicating the first surface and the second surface. The shape of each clearance region is circular or polygonal; wherein when each internal angle of the polygonal is less than 120 degrees, the clearance region further includes a first clearance area and a second clearance area. The first clearance area surrounds the second clearance area, and the shield has a plurality of etch grooves in the first clearance area. The present application also provides a manufacturing method of the shield.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Taiwan Patent Application No. 112113665, filed on April 12, 2023, which is incorporated herein by reference for all purposes, as if fully set forth herein. Technical Field

[0003] This invention relates to the field of vapor deposition technology, and more particularly to a shielding method. Background Technology

[0004] With advancements in light sources and backlight modules, the thickness of displays such as liquid crystal displays (LCDs) has decreased significantly. Furthermore, the demand for thinner and lighter mobile phones has led to the development of organic light-emitting diode (OLED) displays. OLED displays utilize the characteristic of having no backlight module to achieve thinner and lighter mobile phones while offering better image quality and lower power consumption.

[0005] Fine metal masks are commonly used in the display industry, such as in the manufacture of OLED display panels, to deposit pixel material onto a substrate to form a pixel array. During the deposition process, alignment between the mask and the substrate is crucial, and any factor affecting the mask structure can cause misalignment and deposition errors. For example, even if the fine metal mask has alignment marks, if the mask is bent or uneven, it may interfere with the alignment of the marks, rendering the mask unusable. Summary of the Invention

[0006] To address the shortcomings of existing technologies, this invention provides a shield that can prevent stress concentration and stress-induced creases, thereby improving the accuracy of alignment and enabling effective monitoring of the thickness of the vapor-deposited material layer during vapor deposition.

[0007] The shield provided by this invention includes a first surface and a second surface opposite to the first surface, and has a fully etched area and multiple clearance areas. The shield has multiple through holes in the fully etched area, and each through hole connects the first surface and the second surface. Multiple clearance areas are distributed within the fully etched area, and the multiple through holes in the fully etched area surround each clearance area. Each clearance area further has a through hole connecting the first surface and the second surface. Each clearance area is circular or polygonal in shape; wherein, when each interior angle of the polygon is less than 120 degrees, the clearance area further includes a first clearance region and a second clearance region. The first clearance region surrounds the second clearance region, and the shield has multiple etched grooves in the first clearance region.

[0008] In one embodiment of the present invention, the area of ​​the first clearance region is greater than 5% of the area of ​​the clearance region, and the plurality of etched groove openings are on the first surface or the second surface.

[0009] In one embodiment of the present invention, the area of ​​the first clearance area is greater than or equal to 10% of the area of ​​the clearance area.

[0010] In one embodiment of the present invention, the shape of the above-mentioned clearance area is rectangular, and includes a first clearance area and a second clearance area.

[0011] In one embodiment of the present invention, the aforementioned total etch zone further includes multiple working zones, which are arranged at intervals between each other; wherein, multiple clearance zones are arranged around each working zone.

[0012] In one embodiment of the present invention, the aforementioned total etch zone further includes a peripheral zone surrounding multiple working zones; multiple clearance zones are further disposed between the edge of each working zone and the edge of the shield.

[0013] The present invention also provides a shielding system comprising a first surface and a second surface opposite to the first surface, and having a fully etched region and a plurality of clearance regions. The shielding system has a plurality of through-holes in the fully etched region, each through-hole connecting the first surface and the second surface. The plurality of clearance regions are distributed within the fully etched region, and at least one of the plurality of clearance regions includes a first clearance area and a second clearance area, wherein the first clearance area surrounds the second clearance area. The area of ​​the first clearance area is greater than 5% of the area of ​​the at least one clearance region. The shielding system further has a plurality of etched grooves in the first clearance region and through-holes in the second clearance region; the plurality of etched grooves open onto the first surface or the second surface, and the through-holes connect the first surface and the second surface.

[0014] The present invention also provides a method for manufacturing a shield, comprising the steps of: providing a substrate having opposing first and second surfaces, as well as a full etching preparation area and a plurality of clearance preparation areas; forming a first photoresist layer on the first surface of the substrate and a second photoresist layer on the second surface, wherein the first photoresist layer has a plurality of first openings located in the full etching preparation area, and the second photoresist layer has a plurality of second openings located in the full etching preparation area; forming a plurality of first etched portions on the first surface corresponding to the plurality of first openings; forming a plurality of second etched portions on the second surface corresponding to the plurality of second openings; and connecting each of the first etched portions and each of the second etched portions to form a plurality of through holes.

[0015] As can be seen from the above solutions, the advantages of the present invention are:

[0016] This invention utilizes a circular or polygonal clearance area, with each interior angle of the polygon being greater than or equal to 120 degrees, thus minimizing regional stress concentration and preventing creases. Furthermore, because the clearance area can comprise a first clearance area and a second clearance area, with the first clearance area having multiple etched grooves surrounding the second clearance area, the structural difference between the clearance area and the fully etched area is minimized, reducing the stress gradient and further preventing creases. This invention further enhances the accuracy of alignment and facilitates effective monitoring of the vapor deposition material layer thickness during vapor deposition. The manufacturing method of this invention also helps improve the pass rate and usability of shielding. Attached Figure Description

[0017] Figure 1 This is a bottom view schematic diagram of the shielding in the first embodiment of the present invention;

[0018] Figure 2 for Figure 1 A magnified view of a portion of the image;

[0019] Figure 3 for Figure 2 A partial sectional view along section line A-A';

[0020] Figures 4A-4B for Figure 1 A photographic illustration of an embodiment;

[0021] Figure 5 This is a schematic diagram of the first process of a shielding manufacturing method according to an embodiment of the present invention;

[0022] Figures 6A-6C This is a schematic diagram of the first operation of a shielding manufacturing method according to an embodiment of the present invention;

[0023] Figure 7 This is a schematic diagram of the second process of a shielding manufacturing method according to an embodiment of the present invention;

[0024] Figures 8A-8D This is a second operational schematic diagram of a shielding manufacturing method according to an embodiment of the present invention;

[0025] Figure 9 This is a schematic diagram of the third process of a shielding manufacturing method according to an embodiment of the present invention;

[0026] Figure 10 This is a schematic diagram of the third operation of a shielding manufacturing method according to an embodiment of the present invention;

[0027] Figure 11 This is a bottom view schematic diagram of the shielding according to the second embodiment of the present invention;

[0028] Figure 12 for Figure 11 A magnified view of a portion of the image;

[0029] Figure 13 for Figure 12 A partial sectional view along section line B-B';

[0030] Figures 14-14B are... Figure 11 Microscopic images of an embodiment;

[0031] Figures 15A-15B for Figure 11 A photographic illustration of an embodiment;

[0032] in:

[0033] 10, 10a - Shielding;

[0034] 100-Sheet metal;

[0035] 110 - First surface;

[0036] 120 - Second surface;

[0037] 200 - Total erosion zone;

[0038] 200' - Total erosion preparation zone;

[0039] 2000 - Through hole;

[0040] 300, 300a - Clearance Zone;

[0041] 300' - Clearance preparation area;

[0042] 3000 - Through hole;

[0043] 3000' - Through-hole range;

[0044] 310 - First Clearance Zone;

[0045] 320 - Second Clearance Zone;

[0046] 330 - Etching groove;

[0047] 335-Opening;

[0048] 410 - First photoresist layer;

[0049] 415 - First opening;

[0050] 420 - Second photoresist layer;

[0051] 425 - Second opening;

[0052] 510 - First Etching Section;

[0053] 520 - First Opening;

[0054] 530 - Second Etching Section;

[0055] 540 - Second opening;

[0056] 600' - Pattern;

[0057] 600 - First photoresist layer pattern;

[0058] 6000 - First opening pattern;

[0059] 610 - Closed geometric figures;

[0060] 611 - Boundary;

[0061] 612 - Inner boundary;

[0062] 720 - Corresponding area of ​​total eclipse;

[0063] 730 - Clearance Corresponding Zone;

[0064] 731 - First Area;

[0065] 732 - Second Area;

[0066] A-A'-Section line. Detailed Implementation

[0067] The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front, back, top, or bottom, are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the present invention.

[0068] Figure 1 This is a bottom view schematic diagram of the shielding according to an embodiment of the present invention. Figure 2 for Figure 1 A magnified view of the area selected by the dashed line. Figure 3 for Figure 2 A partial cross-sectional view along section line A-A'. The shield 10 of this embodiment may have a sheet-like or plate-like main body. The main body is preferably made of metal. For example... Figure 1 and Figure 3 As shown, in embodiments of the present invention, the shield 10 may be generally rectangular sheet-like or rectangular plate-like, and includes a first surface 110 and a second surface 120 opposite to the first surface 110. In some embodiments, the shield 10 may have a length of, for example, 250 to 1800 mm, and a width of, for example, 50 to 400 mm. Furthermore, in some embodiments, the thickness may be, for example, 15 to 50 μm.

[0069] like Figure 1 , Figure 2 and Figure 3As shown, the shield 10 includes a fully etched region 200 and a clearance region 300. The shield 10 has multiple through holes 2000 in the fully etched region 200, and each through hole 2000 connects a first surface 110 and a second surface 120. The through holes 2000 may have a first opening 520 on the first surface 110 and a second opening 540 on the second surface 120. The sizes of the first opening 520 and the second opening 540 may be different. In this embodiment, for example, the first opening 520 is larger than the second opening 540. Multiple clearance regions 300 are distributed within the fully etched region 200. The clearance regions 300 may have through holes 3000, and the through holes 2000 of the fully etched region 200 surround the clearance regions 300. The through holes 3000 connect the first surface 110 and the second surface 120. The through-hole 3000 within the clearance area 300 can be used, for example, for alignment during the tensioning of the shield 10, and for monitoring the thickness of the vapor-deposited material layer during vapor deposition.

[0070] In a preferred embodiment of the present invention, such as Figure 1 As shown, the etched area 200 may further include a plurality of working areas 210 and a peripheral area 220. In several embodiments, the working areas 210 and the plurality of through holes 2000 therein have a patterned design that can be used to implement the pattern onto the substrate in, for example, a vapor deposition process. The plurality of working areas 210 are arranged at intervals from each other, and a plurality of clearance areas 300 are disposed around the periphery of each working area 210. The peripheral area 220 preferably surrounds the plurality of working areas 210. For example, the peripheral area 220 includes the area between the periphery of the shield 10 and the plurality of working areas 210. The plurality of clearance areas 300 may further be disposed between the edge of each working area 210 and the edge of the shield 10. Figure 1 The number and arrangement of the clearance zone 300 are for illustrative purposes only, and the number of clearance zone 300 is not directly proportional to the size of the shielding 10. The number and arrangement of clearance zone 300 can be adjusted as needed.

[0071] like Figures 1-3 As shown, the clearance area 300 is circular in shape; however, it can also be polygonal. Furthermore, the shapes of multiple clearance areas 300 can also differ. When the clearance area 300 is polygonal, except in special cases (described later), each interior angle of the polygon is greater than 90 degrees, and preferably greater than or equal to 120 degrees. That is, in special cases, each interior angle of the polygon can be less than or equal to 90 degrees. Furthermore, the polygon can be a convex polygon. The area of ​​the clearance area 300 can be determined according to the extent occupied by the through-hole 3000, in accordance with well-known methods. For example, the area of ​​the clearance area 300 can be approximately 1 mm². 2 Or smaller.

[0072] Figure 1 An actual example of the embodiment may be as follows Figures 4A-4B As shown, where Figure 4A These are images taken from the second surface 120. Figure 4B The image is taken from the first surface 110. Because the clearance area 300 in this embodiment of the invention possesses circular symmetry and does not have a right-angle (90-degree) structure, it is less prone to regional stress concentration, thus avoiding crease formation. For example... Figures 4A-4B As shown, no creases were observed at the boundary between the clearance area 300 and the fully etched area 200, and the appearance was smooth. Therefore, it can avoid alignment errors in processes such as wire mesh forming and avoid inaccurate thickness monitoring in processes such as vapor deposition.

[0073] The present invention also provides a method for manufacturing a shield, such as Figure 5 As shown, steps S810 to S850 are explained below. Step S810: A substrate is provided, having a first surface and a second surface opposite to each other, as well as a full etching preparation area and a plurality of clearance preparation areas; Step S820: A first photoresist layer is formed on the first surface of the substrate, and a second photoresist layer is formed on the second surface; wherein, the first photoresist layer has a plurality of first openings located in the full etching preparation area, and the second photoresist layer has a plurality of second openings located in the full etching preparation area; Step S830: A plurality of first etched portions are formed on the first surface, each corresponding to a plurality of first openings; Step S840: A plurality of second etched portions are formed on the second surface, each corresponding to a plurality of second openings; Step S850: Each first etched portion and each second etched portion is connected to form a plurality of through holes.

[0074] The sheet material 100 provided in step S810 can be referred to, for example... Figure 6A The illustration is shown. Furthermore, the board 100 can be pre-treated in any well-known manner to suit steps S820 to S850. Step S820 can be performed in any well-known manner, and its operation can be referred to, for example... Figure 6B The illustration may include, for example, coating a photoresist layer 410 on a first surface 110, exposing and developing it to form a first photoresist layer 410 and a plurality of first openings 415 on the first surface 110, and coating a photoresist layer 420 on a second surface 120, exposing and developing it to form a second photoresist layer 420 and a plurality of second openings 425 on the second surface 120. In a preferred embodiment of the invention, the first openings 415 are larger than the second openings 425.

[0075] Steps S830 to S840 can be performed in any well-known manner, and their operation can be referred to, for example... Figure 6CThe illustration may include, for example, performing a first etching, to etch the substrate 100 by exposing the portion of the first surface 110 exposed to the first opening 415 and the portion of the second surface 120 exposed to the second opening 425, thereby initially forming the first etched portion 510 and the second etched portion 530. Step S850 may be performed in any well-known manner and may include, for example, performing a second etching, to further etch the first etched portion 510 by the etching solution. Step S850 preferably further includes forming a protective layer (not shown) on the second photoresist layer 420, wherein the protective layer may fill the second etched portion 530 and maintain the shape of the second etched portion 530 during the second etching. When etching reaches the protective layer, the first etched portion 510 and the second etched portion 530 may connect and form a through hole 2000. The first etched portion 510 has a first opening 520 on the first surface 110, and the second etched portion 530 has a second opening 540 on the second surface 120. In embodiments of the invention, the first opening 520 may be larger than the second opening 540. The manufacturing method of the shielding of the present invention may further include removing the first photoresist layer 410, the second photoresist layer 420 and the protective layer. The removal can be carried out by any appropriate means, which will not be described in detail here.

[0076] In this embodiment of the invention, step S820 further includes designing a first photoresist layer pattern and designing a second photoresist pattern. In several embodiments, such as Figure 7 As shown, the steps for designing the first photoresist layer pattern may include steps S910 to S930, as explained below. Step S910: Design a pattern, including multiple first aperture patterns suitable for forming multiple first apertures; Step S920: Draw a boundary on the pattern, the boundary being a closed geometric shape, and defining a full etch corresponding area and a clearance corresponding area; Step S930: Delete the multiple first aperture patterns located within and on the clearance corresponding areas of the boundary, completing the first photoresist layer pattern suitable for forming the first photoresist layer. Step S910 may further include designing the range and location of the via 3000.

[0077] The operation of steps S910 to S930 can be referred to, for example Figures 8A-8D An illustration. For example... Figure 8A As shown, pattern 600' includes a plurality of first opening patterns 6000, wherein the size or range of pattern 600' is ( Figure 8A The pattern shown is only a partial representation (600'), which preferably reflects, for example, the size or range of the subsequent first photoresist layer 410, while the first aperture pattern 6000 can reflect the size, density, and arrangement of the subsequent first aperture 415, and can also further reflect the shape, density, and arrangement of the first opening 520. For example... Figure 8BAs shown, the area within the closed geometry 610 is preferably designated as the clearance region 730, while the area outside is designated as the total etch region 720. The size of the clearance region 730 is preferably significantly different from the via range 3000', for example, being sufficiently large relative to the via range 3000' to be clearly distinguishable from it. For instance, the diameter of the clearance region 730 is preferably greater than 100 μm. Figures 8A-8B The diagram only shows a portion of the pattern 600' and a corresponding clearance area 730; however, the entire pattern 600' may contain multiple closed geometric figures 610, defining multiple clearance areas 730. The closed geometric figures 610 preferably reflect the shape of the clearance area 300, such as circles or polygons as previously described, and except in special cases (described later), each interior angle of the polygon is greater than 90 degrees, preferably greater than or equal to 120 degrees. Figure 8B The closed geometric figure 610 shown is a circle.

[0078] For example Figure 8C As shown, step S930 deletes the first opening pattern 6000 in the closed geometry 610. In this embodiment of the invention, the first opening pattern 6000 that the contour of the closed geometry 610 passes through, i.e., the first opening pattern 6000 on the boundary 611, is also deleted, thus completing the process as shown. Figure 8D The first photoresist layer pattern 600 is shown. In simple terms, since the clear area 730 in the first photoresist layer pattern 600 does not contain the first opening pattern 6000, step S820 preferably only forms the first opening 415 in the full etch preparation area 200', thereby steps S830 to S850 form the first etched portion 510 and the through-hole 2000 in the full etch preparation area 200' of the first surface 110. Furthermore, steps S830 to S850 may further include etching to form the through-hole 3000.

[0079] In several embodiments, such as Figure 9 As shown, the steps for designing the second photoresist layer pattern may include steps S940 to S960, as explained below. Step S940: Design a pattern, which includes multiple second aperture patterns suitable for forming multiple second apertures; Step S950: Draw a boundary on the pattern, the boundary being a closed geometric shape, and defining a full etch corresponding area and a clearance corresponding area; Step S960: Delete the multiple second aperture patterns located within and on the clearance corresponding areas of the boundary, completing the second photoresist layer pattern suitable for forming the second photoresist layer.

[0080] The operation of steps S940 to S960 can be referred to Figures 8A-8DPreferably, the closed geometric figure in step S950 corresponds in position to the closed geometric figure in step S920, and they are consistent in shape, size, and quantity. In several embodiments of the present invention, step S820 includes steps S910-S930 and steps S940-S960, but it is not limited thereto. For example, step S820 may also include only steps S910-S930 or only steps S940-S960. When only steps S910 to S930 are performed, since the multiple second openings 425 are located in the clearance preparation area 300' on the second surface 120, the second surface 120 can be etched in the clearance preparation area 300', and the clearance area 300 on the second surface 120 can have etched grooves (described later); when only steps S940 to S960 are performed, since the first surface 110 can be etched in the clearance preparation area 300', the clearance area 300 on the first surface 110 can have etched grooves.

[0081] In several embodiments, such as Figure 10 As shown, step S920 or step S950 may further include drawing an inner boundary 612 within the closed geometry 610, which divides the corresponding clearance area 730 into a first region 731 and a second region 732. Preferably, the first region 731 surrounds the second region 732, and the percentage of the area of ​​the first region 731 relative to the area of ​​the second region 732 is preferably greater than 5%. Next, step S930 further includes deleting a plurality of first opening patterns 6000 located in the second region 732, and step S960 further includes deleting a plurality of second opening patterns located in the second region 732. Based on the fact that the clearance corresponding area 730 in the first photoresist layer pattern 600 has multiple first opening patterns 6000 in the first region 731, while there are no first opening patterns 6000 in the second region 732, step S820 can form multiple first openings 415 in the full etch preparation area 200' and part of the clearance preparation area 300', so that in steps S830 to S850, part of the clearance preparation area 300' of the first surface 110 is etched, and thus the clearance area 300 can have multiple etch grooves on the first surface 110. Alternatively, step S820 can form multiple second openings 425 in the full etch preparation area 200' and part of the clearance preparation area 300', so that in steps S830 to S850, part of the clearance preparation area 300' of the second surface 120 is etched, and the clearance area 300 can have multiple etch grooves on the second surface 120.

[0082] In a preferred embodiment of the present invention, an etching groove is formed in a clearance preparation area 300' on either the first surface 110 or the second surface 120. Further, the clearance preparation area 300' on the first surface 110 of the substrate 100 may further include a first clearance area preparation area (not shown) and a second clearance area preparation area (not shown), or the clearance preparation area 300' on the second surface 120 may further include a first clearance area preparation area (not shown) and a second clearance area preparation area (not shown). The first clearance area preparation area surrounds the second clearance area preparation area. When the etching groove is formed on the first surface 110, the first photoresist layer 410 in step S820 further has a plurality of first openings 415 in the first clearance area preparation area. When the etching groove is formed on the second surface 120, the second photoresist layer 420 in step S820 further has a plurality of second openings 425 in the first clearance area preparation area. The shield 10 manufactured according to the manufacturing method embodiment of the present invention has a circular or polygonal clearance area 300, and each interior angle of the polygon is preferably greater than or equal to 120 degrees, which can reduce or avoid the generation of creases and help improve the manufacturing yield and shield availability.

[0083] Figure 11 This is a bottom view schematic diagram of the shielding according to another embodiment of the present invention. Figure 12 for Figure 11 A magnified view of the area selected by the dashed line. Figure 13 for Figure 12 A partial sectional view along section line B-B'. Figures 11-13 Implementation examples and Figures 1-3 The main difference in the embodiments is that the clearance area 300a further includes a first clearance area 310 and a second clearance area 320, the first clearance area 310 surrounding the second clearance area 320, and the shield 10a has a plurality of grooves 330 in the first clearance area 310 and a through hole 3000 in the second clearance area 320. Testing has shown that when the area of ​​the first clearance area 310 is greater than 5% of the area of ​​the clearance area 300a, the formation of creases can be improved. In a preferred embodiment of the invention, the percentage of the area of ​​the first clearance area 310 to the area of ​​the clearance area 300a is preferably greater than or equal to 10%.

[0084] like Figure 13As shown, the etching groove 330 is formed on the first surface 110, and its opening 335 is located on the first surface 110. However, the present invention is not limited thereto; the etching groove 330 may also be formed on the second surface 120, and the opening 335 may be located on the second surface 120. It should be noted that, in the embodiments of the present invention, the etching groove 330 refers to a groove formed by partially etching from the first surface 110 or the second surface 120 of the plate 100 without etching through the plate 100. The embodiments of the present invention do not limit the depth of the etching groove 330. For example, the depth of the etching groove 330 may be approximately the depth of the first etched portion 510, but it is not limited thereto.

[0085] Figure 14A and 14B This is a schematic diagram of a microscopic image with 10a shielded. Figure 14A The image is taken from the second surface 120, showing that there is no opening 335 of the groove 330 within the clearance area 300a. Figure 14B The image is taken from the first surface 110, showing that the clearance area 300a surrounds the second clearance area 320 by the etched groove 330 in the first clearance area 310. The method for forming the etched groove 330 can be referred to above, including, as in steps S920 to S930 or steps S950 to S960, drawing an inner boundary 612 within the closed geometry 610 to divide the clearance corresponding area 730 into a first area 731 and a second area 732, and deleting a plurality of first opening patterns 6000 or a plurality of second opening patterns located in the second area 732.

[0086] like Figures 11-13 As shown, the clearance area 300a is rectangular. However, the clearance area 300a can also be circular or other polygonal shapes, such as pentagons or hexagons. In this embodiment of the invention, generally, when the interior angle of the polygon is less than or equal to 90 degrees, for example, when the polygon is rectangular, the clearance area 300a is configured with a first clearance region 310 having multiple etched grooves 330. In a preferred embodiment of the invention, when the interior angle of the polygon is less than 120 degrees, the clearance area 300a is configured with a first clearance region 310 having multiple etched grooves 330. Because the multiple etched grooves 330 surround the second clearance region 320, and the fully etched region 200 is adjacent to the first clearance region 310 having multiple etched grooves 330, the structural difference between the clearance area 300 and the fully etched region 200 is weakened in this embodiment, thereby reducing the stress gradient and preventing creases from forming.

[0087] Figure 11 An actual example of the embodiment may be as follows Figures 15A-15B As shown, where Figure 15A These are images taken from the second surface 120. Figure 15B These are images captured from the first surface 110. For example... Figures 15A-15BAs shown, no visible creases are generated at the junction of the clearance area 300a and the fully etched area 200, and the appearance is smooth. Therefore, it can avoid alignment errors in processes such as wire mesh forming and avoid inaccurate thickness monitoring in processes such as vapor deposition.

[0088] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Those skilled in the art to which this invention pertains may make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A shielding system, characterized in that, It includes a first surface and a second surface opposite to the first surface, and has: A fully etched area; the shield has multiple through holes in the fully etched area, and each through hole connects the first surface and the second surface; as well as Multiple clearance zones; these multiple clearance zones are distributed within the total etch zone, and the multiple through holes in the total etch zone surround each clearance zone; Each clearance zone has a through hole that connects the first surface and the second surface. The through hole is used for mesh alignment or vapor deposition monitoring. Each clearance zone is circular or polygonal in shape. When each interior angle of the polygon is less than 120 degrees, the clearance zone further includes a first clearance area and a second clearance area. The first clearance area surrounds the second clearance area, and the shield has multiple etched grooves in the first clearance area.

2. The shielding according to claim 1, characterized in that, The area of ​​the first clearance region is greater than 5% of the area of ​​the clearance region, and the plurality of etched groove openings are on the first surface or the second surface.

3. The shielding according to claim 1, characterized in that, The area of ​​the first clearance zone is greater than or equal to 10% of the total area of ​​the clearance zone.

4. The shielding according to claim 1, characterized in that, The clearance area is rectangular in shape and includes the first clearance area and the second clearance area.

5. The shielding according to claim 1, characterized in that, The total erosion zone further includes multiple working areas, which are arranged at intervals between each other; wherein, multiple clearance zones are configured around each working area.

6. The shielding according to claim 5, characterized in that, The total etch zone further includes a peripheral zone surrounding the plurality of working areas; the plurality of clearance zones are further disposed between the edge of each working area and the edge of the shield.

7. A shielding system, characterized in that, It includes a first surface and a second surface opposite to the first surface, and has: A fully etched area; the shield has multiple through holes in the fully etched area, and each through hole connects the first surface and the second surface; as well as Multiple clearance zones are distributed within the total eclipse area, and at least one of the multiple clearance zones includes a first clearance area and a second clearance area, the first clearance area surrounding the second clearance area; the area of ​​the first clearance area is greater than 5% of the area of ​​the at least one clearance zone. The shield has multiple etching grooves in the first clearance area and a through hole in the second clearance area; the multiple etching grooves open on the first surface or the second surface, and the through hole connects the first surface and the second surface, and the through hole is used for mesh alignment or vapor deposition monitoring.

8. A method for manufacturing a shield, characterized in that, include: A sheet material is provided, the sheet material having a first surface and a second surface opposite to each other, as well as a total etching preparation area and a plurality of clearance preparation areas; A first photoresist layer is formed on the first surface of the substrate, and a second photoresist layer is formed on the second surface; wherein the first photoresist layer has a plurality of first openings located in the full etching preparation area, and the second photoresist layer has a plurality of second openings located in the full etching preparation area. A plurality of first etched portions are formed on the first surface, and the plurality of first etched portions correspond to the plurality of first openings respectively; A plurality of second etched portions are formed on the second surface, each of the plurality of second etched portions corresponding to a plurality of second openings; and The first etched section and the second etched section are connected to form multiple through holes.

9. The method for manufacturing a shield according to claim 8, characterized in that, The clearance preparation area of ​​the first surface further includes a first clearance area preparation area and a second clearance area preparation area, the first clearance area preparation area surrounds the second clearance area preparation area, and the first photoresist layer further has a plurality of first openings located in the first clearance area preparation area; the step of forming a plurality of first etched portions further includes forming a plurality of etch grooves in the first clearance area preparation area.

10. The method for manufacturing a shield according to claim 8, characterized in that, The clearance preparation area of ​​the second surface further includes a first clearance area preparation area and a second clearance area preparation area, the first clearance area preparation area surrounds the second clearance area preparation area, and the second photoresist layer further has a plurality of second openings located in the second clearance area preparation area; the step of forming a plurality of second etched portions further includes forming a plurality of etch grooves in the second clearance area preparation area.

11. The method for manufacturing a shield according to claim 8, characterized in that, Each of the first etched portions further has a first opening, and each of the second etched portions further has a second opening, wherein the first opening is larger than the second opening.

12. The method for manufacturing a shield according to claim 8, characterized in that, The step of forming the first photoresist layer further includes designing a first photoresist layer pattern, comprising: Design a pattern; the pattern includes a plurality of first opening patterns, adapted for forming the plurality of first openings; Draw a boundary on the pattern; the boundary is a closed geometric shape and defines a total eclipse corresponding area and a clearance corresponding area. as well as The first aperture patterns located within and on the boundary are deleted to complete the first photoresist layer pattern suitable for forming the first photoresist layer.

13. The method for manufacturing a shield according to claim 12, characterized in that, It further includes forming a total eclipse zone in the total eclipse preparation zone based on the total eclipse corresponding zone, and forming multiple clearance zones in the multiple clearance corresponding zones based on the multiple clearance corresponding zones.

14. The method for manufacturing a shield according to claim 8, characterized in that, The step of forming the second photoresist layer further includes designing a second photoresist layer pattern, comprising: Design a pattern; the pattern includes a plurality of second opening patterns, adapted for forming the plurality of second openings; Draw a boundary on the pattern; the boundary is a closed geometric shape and defines a total eclipse corresponding area and a clearance corresponding area. as well as The second aperture pattern is deleted from the multiple clear corresponding areas located within and on the boundary to complete the second photoresist layer pattern suitable for forming the second photoresist layer.

15. The method for manufacturing a shield according to claim 14, characterized in that, It further includes forming a total eclipse zone in the total eclipse preparation zone based on the total eclipse corresponding zone, and forming multiple clearance zones in the multiple clearance corresponding zones based on the multiple clearance corresponding zones.

Images