Viewing angle switchable display device including integrated lens

Abstract

The present disclosure relates to a viewing angle switchable display device including an integrated lens, and more particularly, to a viewing angle switchable display device including a substrate having at least one sub-pixel thereon, a plurality of transistors in the at least one sub-pixel on the substrate, a first light emitting diode and a second light emitting diode in the at least one sub-pixel on the substrate, the first light emitting diode and the second light emitting diode being respectively connected to two of the plurality of transistors, and an integrated lens on the first light emitting diode and the second light emitting diode, the integrated lens including a semi-cylindrical lens corresponding to the first light emitting diode and a semi-spherical lens corresponding to the second light emitting diode.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0192433, filed on December 30, 2021, which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to a display device, and more specifically, to a view-angle switchable display device including an integrated lens, said integrated lens being composed of a semi-cylindrical lens and a hemispherical lens having rounded edges. Background Technology

[0004] Recently, with the advent of the information society and the increasing interest in information displays for processing and displaying large amounts of information, as well as the growing demand for portable information media, the display field has developed rapidly. Consequently, various thin and light flat panel display devices have been developed and highlighted.

[0005] Among various flat panel display devices, organic light-emitting diode (OLED) displays are emission-type devices and do not include the backlight unit used in non-emission-type devices (such as liquid crystal displays (LCDs)). As a result, OLED displays offer advantages in terms of viewing angle, contrast ratio, and power consumption, making them suitable for a wide range of applications.

[0006] Specifically, OLED displays can be used in vehicle dashboards. In the automotive field, OLED displays with switchable viewing angles have been researched and developed, allowing drivers and passengers to selectively view images.

[0007] In view-switching OLED displays, view-switching films and light-control films are used to switch the viewing angle of the image. However, the addition of these extra films reduces brightness and increases manufacturing costs. Furthermore, it is difficult to develop view-switching films for stable use in the automotive field. Summary of the Invention

[0008] Therefore, this disclosure relates to a view-angle switchable display device including an integrated lens, which substantially eliminates one or more of the problems caused by the aforementioned limitations and disadvantages.

[0009] The purpose of this disclosure is to provide a view-angle switchable display device including an integrated lens, wherein by providing an integrated lens consisting of a semi-cylindrical lens and a hemispherical lens with rounded edges on a first light-emitting diode and a second light-emitting diode, brightness is increased and manufacturing cost is reduced.

[0010] Another object of this disclosure is to provide a view-angle switchable display device including an integrated lens, wherein the aperture ratio is increased and the brightness is enhanced by integrating a semi-cylindrical lens and a hemispherical lens with rounded edges and a light-shielding pattern inserted therebetween into an integrated lens.

[0011] Additional features and aspects will be set forth in the following description and will be apparent in part from the description, or may be learned by practicing the disclosure provided herein. Other features and aspects of the inventive concept may be realized and obtained by means of structures particularly pointed out in or derived from the written description, and particularly pointed out in the claims and drawings.

[0012] To achieve these and other aspects of this disclosure, as embodied and broadly described herein, a view-angle switchable display device includes: a substrate having at least one sub-pixel thereon; a plurality of transistors in the at least one sub-pixel on the substrate; a first light-emitting diode and a second light-emitting diode in the at least one sub-pixel on the substrate, the first light-emitting diode and the second light-emitting diode being respectively connected to two of the plurality of transistors; and an integrated lens on the first light-emitting diode and the second light-emitting diode, the integrated lens including a semi-cylindrical lens corresponding to the first light-emitting diode and a hemispherical lens corresponding to the second light-emitting diode.

[0013] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0014] The accompanying drawings illustrate various aspects of this disclosure and, together with the description, serve to explain the various principles of this disclosure. The drawings are included to provide a further understanding of this disclosure and are incorporated into and constitute a part of this application.

[0015] In the attached diagram:

[0016] Figure 1 This is a top view illustrating a view-switching display device according to an embodiment of the present disclosure;

[0017] Figure 2 This is a circuit diagram illustrating the sub-pixels of a view-switching display device according to an embodiment of the present disclosure;

[0018] Figure 3 This is a cross-sectional view illustrating a view-switching display device according to an embodiment of the present disclosure;

[0019] Figure 4 This is a view illustrating the operation of the wide-viewing-angle mode and narrow-viewing-angle mode of the pixels of the display panel of the view-switching display device according to an embodiment of the present disclosure;

[0020] Figure 5 This is a top view showing the integrated lens of a view-switching display device according to an embodiment of the present disclosure;

[0021] Figure 6 It is along Figure 5 A cross-sectional view taken from line VI-VI; and

[0022] Figure 7 This is a table showing the brightness of a view-switching display device according to embodiments of the present disclosure. Detailed Implementation

[0023] Reference will now be made in detail to various aspects of this disclosure, exemplary embodiments of which are illustrated in the accompanying drawings.

[0024] Figure 1 This is a top view illustrating a view-switching display device according to an embodiment of the present disclosure. The display device may be an organic light-emitting diode (OLED) display device.

[0025] exist Figure 1 In the present disclosure, the view-switching display device 110 according to an embodiment of the present disclosure includes a timing control unit 120, a data driving unit 130, a gate driving unit 140, and a display panel 150.

[0026] The timing control unit 120 uses multiple timing signals, including a data enable signal, a horizontal synchronization signal, a vertical synchronization signal, and a clock signal, as well as image signals, transmitted from an external system (such as a graphics card or a television system) to generate image data, data control signals, and gate control signals. The image data and data control signals are transmitted to the data drive unit 130, and the gate control signals are transmitted to the gate drive unit 140.

[0027] The data drive unit 130 uses data control signals and image data transmitted from the timing control unit 120 to generate a data signal (data voltage) and transmits the data signal to the data line DL of the display panel 150.

[0028] The gate driving unit 140 uses the gate control signal transmitted from the timing control unit 120 to generate a gate signal (gate voltage) and a transmission signal, and transmits the gate signal and the transmission signal to the gate line GL of the display panel 150.

[0029] The gate driving unit 140 may be an in-panel gate (GIP) type unit, which is to be formed in the non-display area NDA of the substrate of the display panel 150 having gate lines GL, data lines DL and pixels P.

[0030] Display panel 150 includes a display area DA at its center and a non-display area NDA surrounding the display area DA. Display panel 150 uses gate signals, transmission signals, and data signals to display images. To display images, display panel 150 includes multiple pixels P, multiple gate lines GL, and multiple data lines DL in the display area DA.

[0031] Each of the plurality of pixels P includes red, green, and blue sub-pixels SPr, SPg, and SPb, and gate line GL and data line DL intersect each other to define the red, green, and blue sub-pixels SPr, SPg, and SPb. Each of the red, green, and blue sub-pixels SPr, SPg, and SPb is connected to gate line GL and data line DL.

[0032] When the view-switching display device 110 is an OLED display device, each of the red, green and blue sub-pixels SPr, SPg and SPb may include multiple transistors (such as switching transistors, driving transistors and sensing transistors), storage capacitors and light-emitting diodes.

[0033] The structure and operation of the display panel 150 of the view-switching display device 110 can be explained with reference to the accompanying drawings.

[0034] Figure 2 This is a circuit diagram illustrating the sub-pixels of a view-switching display device according to an embodiment of the present disclosure.

[0035] exist Figure 2 In the display panel 150 of the view-switching display device 110, each of the red, green and blue sub-pixels SPr, SPg and SPb (SP) includes first to eighth transistors T1 to T8, a storage capacitor Cst and a first light-emitting diode D1 and a second light-emitting diode D2.

[0036] For example, each of the first to eighth transistors T1 to T8 can be a positive transistor.

[0037] The first transistor T1, acting as the driving transistor, switches (turns on and off) according to the voltage of the first electrode of the storage capacitor Cst. The gate electrode of the first transistor T1 is connected to the first electrode of the storage capacitor Cst and the drain electrode of the fourth transistor T4. The source electrode of the first transistor T1 is connected to the high-level voltage VDD. The drain electrode of the first transistor T1 is connected to the source electrode of the fourth transistor T4, the source electrode of the second transistor T2, and the source electrode of the third transistor T3.

[0038] The second transistor T2, which acts as the emitter transistor, is switched according to the second emitter signal EM2. The gate electrode of the second transistor T2 is connected to the second emitter signal EM2, the source electrode of the second transistor T2 is connected to the drain electrode of the first transistor T1, the source electrode of the fourth transistor T4, and the source electrode of the third transistor T3, and the drain electrode of the second transistor T2 is connected to the source electrode of the fifth transistor T5 and the anode of the first light-emitting diode D1.

[0039] The third transistor T3, acting as the emitter transistor, is switched according to the third emitter signal EM3. The gate electrode of the third transistor T3 is connected to the third emitter signal EM3, the source electrode of the third transistor T3 is connected to the drain electrode of the first transistor T1, the source electrode of the fourth transistor T4, and the source electrode of the second transistor T2, and the drain electrode of the third transistor T3 is connected to the source electrode of the sixth transistor T6 and the anode of the second light-emitting diode D2.

[0040] The fourth transistor T4 is switched according to the second gate signal (sCAN2). The gate electrode of the fourth transistor T4 is connected to the second gate signal SCAN2, the source electrode of the fourth transistor T4 is connected to the drain electrode of the first transistor T1, the source electrode of the second transistor T2, and the source electrode of the third transistor T3, and the drain electrode of the fourth transistor T4 is connected to the gate electrode of the first transistor T1 and the first electrode of the storage capacitor Cst.

[0041] The fifth transistor T5 is switched according to the second gate signal SCAN2. The gate electrode of the fifth transistor T5 is connected to the second gate signal SCAN2, the source electrode of the fifth transistor T5 is connected to the drain electrode of the second transistor T2 and the anode of the first light-emitting diode D1, and the drain electrode of the fifth transistor T5 is connected to the drain electrode of the seventh transistor T7, the drain electrode of the sixth transistor T6 and the reference signal Vref.

[0042] The sixth transistor T6 is switched according to the second gate signal SCAN2. The gate electrode of the sixth transistor T6 is connected to the second gate signal SCAN2, the source electrode of the sixth transistor T6 is connected to the drain electrode of the third transistor T3 and the anode of the second light-emitting diode D2, and the drain electrode of the sixth transistor T6 is connected to the drain electrode of the seventh transistor T7, the drain electrode of the fifth transistor T5 and the reference signal Vref.

[0043] The seventh transistor T7 is switched according to the first transmit signal EM1. The gate electrode of the seventh transistor T7 is connected to the first transmit signal EM1, the source electrode of the seventh transistor T7 is connected to the second electrode of the storage capacitor Cst and the source electrode of the eighth transistor T8, and the drain electrode of the seventh transistor T7 is connected to the drain electrode of the fifth transistor T5 and the drain electrode of the sixth transistor T6.

[0044] The eighth transistor T8, acting as a switching transistor, is switched according to the first gate signal SCAN1. The gate electrode of the eighth transistor T8 is connected to the first gate signal SCAN1, the source electrode of the eighth transistor T8 is connected to the second electrode of the storage capacitor Cst and the source electrode of the seventh transistor T7, and the drain electrode of the eighth transistor T8 is connected to the data signal Vdata.

[0045] The storage capacitor Cst stores the data signal Vdata and the threshold voltage Vth. The first electrode of the storage capacitor Cst is connected to the gate electrode of the first transistor T1 and the drain electrode of the fourth transistor T4, and the second electrode of the storage capacitor Cst is connected to the source electrode of the seventh transistor T7 and the source electrode of the eighth transistor T8.

[0046] A first light-emitting diode (LED) D1 is connected between the second and fifth transistors T2 and T5 and a low-level voltage VSS, and emits light proportional to the current of the first transistor T1. The anode of the first LED D1 is connected to the drain electrode of the second transistor T2 and the source electrode of the fifth transistor T5, and the cathode of the first LED D1 is connected to the low-level voltage VSS. The first LED D1 is configured to correspond to ( Figure 3 The integrated lens IL has rounded edges. Figure 3 The semi-cylindrical lens CL. The first light-emitting diode D1 has a conducting state to obtain a wide viewing angle mode in the left and right directions, and a cut-off state to obtain a narrow viewing angle mode in the left and right directions.

[0047] The second light-emitting diode D2 is connected between the third and sixth transistors T3 and T6 and the low-level voltage VSS, and emits light proportional to the current of the first transistor T1. The anode of the second light-emitting diode D2 is connected to the drain electrode of the third transistor T3 and the source electrode of the sixth transistor T6, and the cathode of the second light-emitting diode D2 is connected to the low-level voltage VSS. The second light-emitting diode D2 is configured to correspond to the integrated lens IL. Figure 3 The hemispherical lens SL. The second light-emitting diode D2 has an on state and an off state to obtain a narrow viewing angle mode in the left and right directions.

[0048] The first light-emitting diode D1 and the second light-emitting diode D2 are connected to the second transistor T2 and the third transistor T3, respectively, and emit light according to the second transmission signal EM2 and the third transmission signal EM3, respectively, so they can be driven independently.

[0049] Subpixel SPs can be driven during the initialization period, sensing period, holding period, and emission period.

[0050] During the initialization period, transistors T7 and T8 (seventh and eighth) are turned on, while transistors T4, T5, and T6 (fourth, fifth, and sixth) are turned off. A reference signal Vref is applied to the second electrode of the storage capacitor Cst, causing the gate electrode of the first transistor T1 to be initialized.

[0051] During the sensing period, transistors T4, T5, T6, and T8 (fourth, fifth, sixth, and eighth) are turned on, while transistor T7 (seventh) is turned off. A data signal Vdata is applied to the second electrode of the storage capacitor Cst, and the sum of the difference between the data signal Vdata and the reference voltage Vref (Vdata-Vref) and the threshold voltage Vth (Vdata-Vref+Vth) is applied to the first electrode of the storage capacitor Cst, causing the threshold voltage Vth to be stored in the storage capacitor Cst.

[0052] During the hold period, transistors T4, T5, T6, T7, and T8 are turned off. The second electrode of the storage capacitor Cst remains at the data signal Vdata, and the first electrode of the storage capacitor Cst remains at the sum of the difference between the data signal Vdata and the reference voltage Vref (Vdata-Vref) and the threshold voltage Vth (Vdata-Vref+Vth).

[0053] During the emission period, transistors T4, T5, T6, and T8 are off, while transistor T7 is on. A current proportional to the square of the value obtained by subtracting the threshold voltage Vth from the gate-source voltage Vgs ((Vdata-Vref+Vth-VDD)-Vth=Vdata-Vref-VDD) flows through the first transistor T1, and the first LED D1 and the second LED D2 emit light with a brightness corresponding to the current flowing through the first transistor T1, depending on the on and off states of the second transistor T2 and the third transistor T3.

[0054] Despite Figure 2 In one embodiment, the subpixel SP exemplarily includes eight transistors, a storage capacitor, and two light-emitting diodes; however, in another embodiment, the subpixel may include a number of transistors less than or greater than eight.

[0055] For example, a subpixel may include nine transistors, a storage capacitor, and two light-emitting diodes, or in another embodiment it may include twelve transistors, a storage capacitor, and two light-emitting diodes.

[0056] The cross-sectional structure of the view-switching display device 110 can be described with reference to the attached drawings.

[0057] Figure 3This is a cross-sectional view illustrating a view-switching display device according to an embodiment of the present disclosure.

[0058] exist Figure 3 In the present disclosure, the display panel 150 of the view-switching display device 110 includes a plurality of sub-pixels SP.

[0059] The semiconductor layer 222 is disposed on the substrate 220, and the gate insulating layer 224 is disposed on the semiconductor layer 222 and the entire substrate 220.

[0060] Semiconductor layer 222 may include a semiconductor material such as silicon or an oxide semiconductor material, and gate insulating layer 224 may include an inorganic insulating material such as silicon oxide (SiO2) and silicon nitride (SiNx). When semiconductor layer 222 includes polysilicon, semiconductor layer 222 may include an active region at its central portion and source and drain regions at its two end portions.

[0061] Semiconductor layer 222 may correspond to the regions of the first to eighth transistors T1 to T8.

[0062] The gate electrode 226 is disposed on the gate insulating layer 224 above the semiconductor layer 222, and the first interlayer insulating layer 230 is disposed on the gate electrode 226 and the entire gate insulating layer 224.

[0063] The gate electrode 226 may include metallic materials such as aluminum (Al) and molybdenum (Mo), and the first interlayer insulating layer 230 may include inorganic insulating materials such as silicon oxide (SiO2) and silicon nitride (SiNx).

[0064] The source electrode 232 and the drain electrode 234 are disposed on the first interlayer insulating layer 230 above the semiconductor layer 222, and the second interlayer insulating layer 240 is disposed on the source electrode 232, the drain electrode 234 and the entire first interlayer insulating layer 230.

[0065] The source electrode 232 and drain electrode 234 may include metallic materials such as aluminum (Al) and molybdenum (Mo), and the second interlayer insulating layer 240 may include inorganic insulating materials such as silicon oxide (SiO2) and silicon nitride (SiNx).

[0066] The source electrode 232 and the drain electrode 234 can be connected to the two end portions of the semiconductor layer 222 through contact holes in the first interlayer insulating layer 230 and the gate insulating layer 224.

[0067] Semiconductor layer 222, gate electrode 226, source electrode 232 and drain electrode 234 constitute each of the first to eighth transistors T1 to T8.

[0068] The first anode 242 and the second anode 244 are disposed on the second interlayer insulation layer 240, and the embankment 246 is disposed on the first anode 242 and the second anode 244.

[0069] The first anode 242 and the second anode 244 may have a three-layer structure of a transparent conductive material (such as indium tin oxide (ITO)) and a metallic material (such as silver palladium copper alloy (APC)). The dam 246 may include an organic insulating material such as polyimide (PI).

[0070] The first anode 242 and the second anode 244 can be connected to the drain electrodes of the second and fourth transistors T2 and T4, respectively.

[0071] The embankment 246 may cover the edge portion of each of the first anode 242 and the second anode 244 and may have an opening that exposes the central portion of each of the first anode 242 and the second anode 244.

[0072] The emitting layer 250 is disposed on the portion of each of the first anode 242 and the second anode 244 exposed through the opening of the embankment 246, and the cathode 252 is disposed on the emitting layer 250 and the entire embankment 246.

[0073] The emitting layer 250 can emit red, green, and blue light in the red, green, and blue sub-pixels SPr, SPg, and SPb, respectively, and can apply a low-level voltage VSS to the cathode 252.

[0074] The first anode 242, the emitting layer 250, and the cathode 252 constitute the first light-emitting diode D1, and the second anode 244, the emitting layer 250, and the cathode 252 constitute the second light-emitting diode D2.

[0075] An encapsulation layer 254 is disposed on the entire cathode 252, and a first touch insulating layer 260 is disposed on the entire encapsulation layer 254.

[0076] The encapsulation layer 254 may include multiple inorganic material layers and multiple organic material layers that are stacked alternately on each other, and the first touch insulating layer 260 may include inorganic insulating materials such as silicon oxide (SiO2) and silicon nitride (SiNx).

[0077] The first touch electrode 262 is disposed on the first touch insulating layer 260, and the second touch insulating layer 264 is disposed on the entire first touch electrode 262.

[0078] The first touch electrode 262 may include metallic materials such as aluminum (Al) and molybdenum (Mo), and the second touch insulating layer 264 may include inorganic insulating materials such as silicon oxide (SiO2) and silicon nitride (SiNx).

[0079] The second touch electrode 266 is disposed on the second touch insulating layer 264, and the first planarization layer 270 is disposed on the entire second touch electrode 266.

[0080] The second touch electrode 266 may include metallic materials such as aluminum (Al) and molybdenum (Mo), and the first planarization layer 270 may include an organic insulating material such as photoacrylic acid.

[0081] An integrated lens IL is disposed on a first planarization layer 270 above a first anode 242 and a second anode 244, and a second planarization layer 274 is disposed on the integrated lens IL and the entire first planarization layer 270.

[0082] The integrated lens IL includes a semi-cylindrical lens CL with rounded edges, a hemispherical lens SL, and a light-shielding pattern 272 located between the semi-cylindrical lens CL and the hemispherical lens SL. The semi-cylindrical lens CL and the hemispherical lens SL can be configured to cover the first anode 242 and the second anode 244 of the first light-emitting diode D1 and the second light-emitting diode D2, respectively, and the light-shielding pattern 272 can be disposed at the interface between the semi-cylindrical lens CL and the hemispherical lens SL.

[0083] The first anode 242 and the second anode 244 of the first light-emitting diode D1 and the second light-emitting diode D2 may have planar shapes corresponding to the semi-cylindrical lens CL and the hemispherical lens SL of the integrated lens IL, respectively.

[0084] For example, the first anode 242 and the semi-cylindrical lens CL can have a rectangular planar shape with a concave edge, and the second anode 244 and the hemispherical lens SL can have a circular planar shape.

[0085] Although not shown, a polarization layer, including a linear polarization layer and a delay layer, can be disposed on the second planarization layer 274. The polarization layer can convert the polarization state of external light incident on the display panel 150 to prevent external light from being emitted to the outside.

[0086] The operation of the display panel 150 of the view-switching display device 110 in each mode can be explained with reference to the accompanying drawings.

[0087] Figure 4 This is a view illustrating the operation of the wide-viewing-angle mode and narrow-viewing-angle mode of the pixels of the display panel of the view-switching display device according to an embodiment of the present disclosure.

[0088] exist Figure 4In the present disclosure, each of the red, green, and blue sub-pixels SPr, SPg, and SPb of the pixel P of the view-switching display device 110 110 includes a first light-emitting diode D1, a second light-emitting diode D2, and an integrated lens IL. The integrated lens IL includes a semi-cylindrical lens CL with a rounded edge (or a portion of the rounded edge) corresponding to the first light-emitting diode D1 and a hemispherical lens SL corresponding to the second light-emitting diode D2.

[0089] Because the circular (or curved) surface of the semi-cylindrical lens CL is set along the vertical direction, incident light from the bottom is focused on the central part in the vertical direction, rather than on the central part in the horizontal direction.

[0090] The vertical direction is defined as the direction connecting the upper and lower parts of the viewing angle switchable display device 110 when the display panel 150 is viewed from the front, and the horizontal direction is defined as the direction connecting the left and right parts of the viewing angle switchable display device 110 when the display panel 150 is viewed from the front. The vertical and horizontal directions intersect each other.

[0091] Because the circular surface of the hemispherical lens SL is set along the vertical and horizontal directions, incident light from the bottom is focused onto the central part in the vertical and horizontal directions.

[0092] When the display panel 150 is driven in wide viewing angle mode, the first light-emitting diode D1 in each of the red, green and blue sub-pixels SPr, SPg and SPb is in an on state to emit light, and the second light-emitting diode D2 in each of the red, green and blue sub-pixels SPr, SPg and SPb is in an off state to not emit light.

[0093] The light from the first light-emitting diode D1 is focused vertically by the semi-cylindrical lens CL of the integrated lens IL. Conversely, the light from the first light-emitting diode D1 is not focused but diffused horizontally by the semi-cylindrical lens CL of the integrated lens IL to be emitted from the display panel 150. As a result, the viewing angle switchable display device 110 displays an image with a narrow viewing angle vertically and an image with a wide viewing angle horizontally.

[0094] When the display panel 150 is driven in narrow viewing angle mode, the first light-emitting diode D1 in each of the red, green and blue sub-pixels SPr, SPg and SPb is in a cut-off state and does not emit light, while the second light-emitting diode D2 in each of the red, green and blue sub-pixels SPr, SPg and SPb is in a conducting state and emits light.

[0095] The light from the second light-emitting diode D2 is focused by the hemispherical lens SL of the integrated lens IL in both vertical and horizontal directions to be emitted from the display panel 150. As a result, the viewing angle switchable display device 110 displays an image with a narrow viewing angle in both vertical and horizontal directions.

[0096] The viewing angle switchable display device 110 displays an image with a wide viewing angle along the left and right directions in a wide viewing angle mode, and displays an image with a narrow viewing angle along the left and right directions in a narrow viewing angle mode. As a result, in the wide viewing angle mode, both the driver and the passenger can view the image, while in the narrow viewing angle mode, only one of the driver and the passenger can view the image.

[0097] Furthermore, since the view-switching display device 110 displays an image with a narrow viewing angle in the vertical direction in both wide and narrow viewing angle modes, it prevents visual interference to the driver caused by reflection of the image at the windshield of the vehicle.

[0098] The structure of the integrated lens IL of the view-switching display device 110 can be explained with reference to the attached drawings.

[0099] Figure 5 This is a top view illustrating the integrated lens of a view-switching display device according to an embodiment of the present disclosure. Figure 6 It is along Figure 5 The cross-sectional view taken from line VI-VI.

[0100] exist Figure 5 and Figure 6 In this display panel 150 of the view-angle switchable display device 110, an integrated lens IL is disposed on the first planarization layer 270, and a second planarization layer 274 is disposed on the integrated lens IL in each of the red, green, and blue sub-pixels SPr, SPg, and SPb of the pixel P. The refractive index of the integrated lens IL may be greater than the refractive index of the second planarization layer 274.

[0101] The integrated lens IL includes a semi-cylindrical lens CL with rounded edges, a hemispherical lens SL, and a light-shielding pattern 272 located between the semi-cylindrical lens CL and the hemispherical lens SL.

[0102] In a semi-cylindrical lens CL with a rounded edge, the bottom surface of the semi-cylindrical lens CL contacts the first planarization layer 270. The cross-section of the semi-cylindrical lens CL in the vertical direction has a semi-circular shape, and the cross-section of the semi-cylindrical lens CL in the horizontal direction has: a rectangular shape with a rounded edge portion; or a semi-elliptical shape with an inclined top side.

[0103] As a result, light emitted through the top surface of the interface between the semi-cylindrical lens CL and the hemispherical lens SL is focused vertically but not horizontally (it is diffused). Furthermore, light emitted through the top surface of the edge or inclined portion of the semi-cylindrical lens CL is focused vertically, but horizontally onto the inclined surface instead of the horizontal (or normal) surface. Therefore, horizontal diffusion of light increases.

[0104] In the hemispherical lens SL, the bottom surface of the hemispherical lens SL contacts the first planarization layer 270, and the cross-section of the hemispherical lens SL along the up-down and left-right directions has a semi-circular shape.

[0105] A light-shielding pattern 272 is disposed at the interface between the semi-cylindrical lens CL and the hemispherical lens SL to prevent interference between the light emitted by the first light-emitting diode D1 and the second light-emitting diode D2. By preventing light emitted from the first light-emitting diode D1 from entering the hemispherical lens SL and light emitted from the second light-emitting diode D2 from entering the semi-cylindrical lens CL, a clear switching between a wide-viewing-angle mode and a narrow-viewing-angle mode in the left-right direction is achieved.

[0106] Figure 7 This is a table showing the brightness of a view-switching display device according to embodiments of the present disclosure.

[0107] exist Figure 7 In the comparative example, the viewing angle switchable display device includes an encapsulation layer with approximately 90% transmittance, a polarizing layer with approximately 45% transmittance, a viewing angle switching film with approximately 70% transmittance, and a light control film with approximately 80% transmittance.

[0108] The light emitted from approximately 100% of the emission area of ​​the light-emitting diode is reduced to approximately 90% due to the encapsulation layer, approximately 40.5% due to the polarization layer, approximately 28.4% due to the viewing angle switching film, and approximately 22.7% due to the light control film. As a result, the light emitted from the light-emitting diode of the comparative example viewing angle switchable display device has a final emissivity of approximately 22.7% and an expected brightness of approximately 672 nits.

[0109] The view-switching display device 110 according to an embodiment of the present disclosure includes an integrated lens IL with a hemispherical lens SL having a light-gathering efficiency of about 327% and a semi-cylindrical lens CL having a light-gathering efficiency of about 165%, an encapsulation layer 254 with a transmittance of about 90%, and a polarizing layer with a transmittance of about 45%.

[0110] The light emitted from approximately 32.5% of the emission area of ​​the second light-emitting diode D2 becomes approximately 106.3% due to the hemispherical lens SL of the integrated lens IL, approximately 95.7% due to the encapsulation layer 254, and approximately 43.0% due to the polarization layer. The light emitted from approximately 67.5% of the emission area of ​​the first light-emitting diode D1 becomes approximately 111.4% due to the semi-cylindrical lens CL of the integrated lens IL, approximately 100.2% due to the encapsulation layer 254, and approximately 45.1% due to the polarization layer. As a result, the light emitted by the second light-emitting diode D2 of the view-switching display device 110 according to an embodiment of the present disclosure has a final emissivity of approximately 43.0% and an expected brightness of approximately 1275.3 nits, and the light emitted by the first light-emitting diode D1 of the view-switching display device 110 according to an embodiment of the present disclosure has a final emissivity of approximately 45.1% and an expected brightness of approximately 1336.3 nits.

[0111] Therefore, compared with the view-angle switchable display device of the comparative example, the view-angle switchable display device 110 according to the embodiments of the present disclosure has an increased final emissivity and an increased brightness.

[0112] Therefore, in the view-angle switchable display device 110 according to the embodiments of the present disclosure, since the integrated lens IL, which consists of a semi-cylindrical lens CL and a hemispherical lens SL with rounded edges corresponding to the first light-emitting diode D1 and the second light-emitting diode D2 respectively, causes light to be collected or diffused, a wide viewing angle mode and a narrow viewing angle mode in the left-right direction are obtained with increased brightness and reduced manufacturing cost.

[0113] Furthermore, since the light-shielding pattern 272 is disposed between the semi-cylindrical lens CL and the hemispherical lens SL with rounded edges in the integrated lens IL, the aperture ratio and brightness are improved and interference is minimized.

[0114] It will be apparent to those skilled in the art that various modifications and variations can be made to the display device of this disclosure without departing from the technical spirit or scope thereof. Therefore, this disclosure is intended to cover such modifications and variations as long as they fall within the scope of the appended claims and their equivalents.

Claims

1. A view-switching display device, comprising: A substrate having at least one sub-pixel thereon; Multiple transistors in each of the at least one sub-pixel on the substrate; A first light-emitting diode and a second light-emitting diode in each of the at least one sub-pixel on the substrate, wherein the first light-emitting diode and the second light-emitting diode are respectively connected to two of the plurality of transistors; as well as An integrated lens is located on the first light-emitting diode and the second light-emitting diode in each of the at least one sub-pixel, the integrated lens comprising a semi-cylindrical lens corresponding to the first light-emitting diode and a hemispherical lens corresponding to the second light-emitting diode. The curved surface of the semi-cylindrical lens is arranged along the vertical direction, so that the incident light from the first light-emitting diode is focused along the vertical direction, and not along the horizontal direction. The circular surface of the hemispherical lens is arranged along the vertical and horizontal directions, so that the incident light from the second light-emitting diode is focused along the vertical and horizontal directions.

2. The view-switching display device according to claim 1, wherein, The integrated lens also includes a light-shielding pattern disposed at the interface between the semi-cylindrical lens and the hemispherical lens.

3. The view-switching display device according to claim 1, wherein, The semi-cylindrical lens has a semi-circular cross-section along the vertical direction, and The semi-cylindrical lens has one of the following shapes in its cross-section along the left-right direction: a rectangular shape with rounded edge portions; and a semi-elliptical shape with an inclined top side.

4. The view-switching display device according to claim 1, wherein, The first anode of the first light-emitting diode has a planar shape corresponding to the semi-cylindrical lens, and the second anode of the second light-emitting diode has a planar shape corresponding to the hemispherical lens.

5. The view-angle switchable display device according to claim 4, wherein, The first anode and the semi-cylindrical lens have a rectangular shape with a concave edge, while the second anode and the hemispherical lens have a circular shape.

6. The view-switching display device according to claim 1, further comprising: Encapsulation layers on the first and second light-emitting diodes; The first touch electrode and the second touch electrode on the encapsulation layer; A first planarization layer between the first touch electrode and the second touch electrode and the integrated lens; as well as A second planarization layer on the integrated lens.

7. The view-switching display device according to claim 6, wherein, The refractive index of the integrated lens is greater than that of the second planarization layer.

8. The view-switching display device according to claim 1, wherein, The plurality of transistors includes: The first transistor is connected to a high-level voltage; The second transistor is switched and connected to the first transistor according to the second transmit signal; The third transistor is switched and connected to the first transistor according to the third transmit signal; A fourth transistor, which switches according to a second gate signal and is connected to the first transistor; The fifth transistor is switched according to the second gate signal and connected to the second transistor; The sixth transistor, which switches according to the second gate signal and is connected to the third transistor; A seventh transistor, which switches and is connected to a reference signal according to a first transmit signal; and The eighth transistor is switched according to the first gate signal and connected to the data signal.

9. The view-angle switchable display device according to claim 8, wherein, A storage capacitor is connected between the first transistor, the fourth transistor, and the eighth transistor in each of the at least one sub-pixel. Wherein, the first light-emitting diode is connected between the second transistor and the low-level voltage, and The second light-emitting diode is connected between the third transistor and the low-level voltage.

10. The view-angle switchable display device according to claim 1, wherein, The semi-cylindrical lens has a flat bottom surface facing the first light-emitting diode, and the curved surface of the semi-cylindrical lens is a top surface facing away from the first light-emitting diode.

11. The view-angle switchable display device according to claim 1, wherein, The hemispherical lens has a flat bottom surface facing the second light-emitting diode, and the circular surface of the hemispherical lens is the top surface facing away from the second light-emitting diode.

12. The view-angle switchable display device according to claim 1, wherein, The semi-cylindrical lens and the hemispherical lens are connected to each other.

13. The view-angle switchable display device according to claim 12, wherein, The semi-cylindrical lens has a concave portion, and the hemispherical lens contacts the entire concave portion of the semi-cylindrical lens.

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