Chamber body penetration for chamber-in-resistance heating element

Abstract

A method and apparatus for providing uniform heating of a substrate disposed within a processing chamber is provided. The apparatus includes one or more heating coils disposed in the processing chamber. The one or more heating coils are electrically coupled to a power source using a heater rod. The heater rod is coupled to a socket on a distal end opposite the connection to the heating coil. The socket includes a cooling plate that passes through and is configured to remove contaminants, such as methane, from an area surrounding the heater rod.

Description

background Technical Field

[0002] The embodiments described herein generally relate to the field of semiconductor substrate processing, and more specifically, to pre-epitaxial baking of semiconductor substrates. Pre-epitaxial baking is performed prior to the epitaxial deposition operation to clean the substrate. Background Technology

[0004] In traditional semiconductor manufacturing, substrates (such as wafers) are pre-cleaned to remove contaminants, such as oxides, before thin films are grown on them via epitaxial processes. Substrate pre-cleaning is performed by baking the wafer in a single substrate epitaxial (Epi) chamber or in a hydrogen atmosphere within a furnace. A single substrate Epi chamber is designed to provide a uniform temperature distribution over the substrates positioned within the processing volume and precise control over gas flow over the substrates. However, a single substrate Epi chamber processes one substrate at a time and may therefore not provide the required throughput in the manufacturing process. Furnaces enable batch processing of multiple substrates. However, furnaces do not provide a uniform temperature distribution over each substrate and / or among the substrates positioned within the processing volume, and therefore cannot provide the required quality in the manufactured apparatus. Specifically, heat loss near the substrate edges results in a highly non-uniform temperature distribution over each substrate.

[0005] Therefore, there is a need for processes and equipment capable of performing batch multi-substrate processes while reducing heat loss near the substrate edges to provide a uniform temperature distribution above the substrate. Summary of the Invention

[0006] This disclosure generally relates to a system for processing semiconductor substrates. More specifically, this disclosure relates to embodiments of a heating system for substrate processing. The heating system includes: a first heater including a continuous heating coil; a first heater rod coupled to a first connection point of the first heater; a second heater rod coupled to a second connection point of the first heater; and a socket coupled to one of the first heater rods or the second heater rod at a distal end opposite to the first heater. Each of the first and second heater rods is configured to screw onto the first heater and includes a passage disposed through the first heater. The socket includes a through-hole coupled to the first or second heater rod and includes a through-hole through an inert gas passage fluidly coupled to the through-hole through the first or second heater rod. A cooling plate is disposed around at least a portion of the through-hole.

[0007] In another embodiment, a receptacle assembly for coupling to a heater rod in a substrate processing chamber is described. The receptacle assembly includes a through-hole and a cooling plate disposed around at least a portion of the through-hole. The through-hole includes a cavity containing a female threaded section and configured to receive the heater rod, and a through-hole inert gas passage fluidly coupled to the cavity. The cooling plate includes a cooling plate inert gas passage, a connecting channel disposed in the surface of the cooling plate and fluidly connecting the cooling plate inert gas passage and the through-hole inert gas passage, and a cooling channel disposed through the cooling plate.

[0008] In another embodiment, a heating system for substrate processing is described. The heating system includes: a first heater having a continuous heating coil; a first heater rod coupled to a first connection point of the first heater; a second heater rod coupled to a second connection point of the first heater; and a socket coupled to one of the first heater rod or the second heater rod. Each of the first heater rod and the second heater rod includes a passage disposed through each of the two. The socket includes a through-passage coupled to the first heater rod or the second heater rod and includes a through-passage through an inert gas passage fluidly coupled to the through-passage through the first heater rod or the second heater rod. A cooling plate is disposed around at least a portion of the through-passage and includes a cooling plate inert gas passage fluidly coupled to the through-passage through the inert gas passage, and a cooling channel disposed through the cooling plate. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure briefly outlined above can be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and are not intended to limit the scope of the embodiments, and allow for other equally effective embodiments.

[0010] Figure 1 It is a schematic plan view of an example of a semiconductor processing system according to one or more embodiments.

[0011] Figure 2 This is a schematic cross-sectional view of an exemplary processing chamber that can be used to perform a batch multi-substrate cleaning process according to one or more embodiments.

[0012] Figure 3 yes Figure 2 A schematic cross-sectional plan view of the processing chamber.

[0013] Figures 4A to 4B This is a schematic side view of a process chamber heating element according to one embodiment.

[0014] Figure 5 This is a schematic side view of a heater rod according to one embodiment.

[0015] Figure 6A This is a schematic cross-sectional view of the connection point from the heater rod to the heating element.

[0016] Figure 6B This is a schematic cross-sectional view of the connection point from the heater rod to the socket.

[0017] For ease of understanding, the same reference numerals have been used to identify common elements in the figures where possible. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0018] This disclosure generally relates to semiconductor processing. More specifically, this disclosure relates to pre-epitaxial baking of a substrate within a semiconductor processing chamber.

[0019] The embodiments described herein provide a multi-substrate batch processing system in which multiple substrates are simultaneously pre-cleaned to remove contaminants, such as oxides. Pre-cleaning of multiple substrates includes baking the substrates in a hydrogen atmosphere within a single or batch epitaxial deposition chamber. The epitaxial deposition chamber maintains a uniform temperature distribution above each substrate disposed within the processing volume. Therefore, the multi-substrate batch processing system can provide improved quality and yield in the manufactured apparatus.

[0020] The apparatus for maintaining a uniform temperature distribution includes one or more heaters disposed within a processing chamber. The one or more heaters are resistance heating coils disposed around at least a portion of the processing chamber volume. The one or more resistance heating coils are coated to reduce the interaction between the coil material and the internal environment of the processing chamber. The resistance heating coils are coupled to a power source via heater rods. The heater rods are separate from the resistance heating coils but can be similarly coated with a coating material. The materials of the resistance heater coils and heater rods are porous. The combination of coating and purge gas systems helps reduce contamination of the substrate within the processing chamber and prevents damage to the materials of the resistance heater coils and heater rods.

[0021] This document describes various implementation methods. Although multiple elements of different implementation methods may be described together in a process flow or system, multiple elements may be implemented in combinations described herein, in variations of the systems described herein, or independently in different process flows or systems.

[0022] Figure 1This is a schematic plan view of an example of a semiconductor processing system 100 according to one or more embodiments. The processing system 100 typically includes a factory interface 102, loading and locking chambers 104, 106, transfer chambers 108, 116 with corresponding transfer robots 110, 118, holding chambers 112, 114, and processing chambers 120, 122, 124, 126, 128, 130. As detailed herein, substrates in the processing system 100 can be processed in and transferred between the respective chambers without exposure to the surrounding environment outside the processing system 100. For example, substrates can be processed in and transferred between the respective chambers under low pressure (e.g., less than or equal to about 300 Torr) or vacuum conditions without disrupting the low pressure or vacuum environment between different processes performed on the substrates in the processing system 100. Accordingly, the processing system 100 can provide an integrated solution for some processing of substrates.

[0023] Examples of processing systems that can be appropriately modified based on the disclosure provided herein include: or Integrated processing systems or other suitable processing systems commercially available from Applied Materials, Inc., located in Santa Clara, California. It will be anticipated that other processing systems, including those from other manufacturers, can be adapted to benefit from the aspects described herein.

[0024] exist Figure 1 In the illustrated example, factory interface 102 includes a docking station 140 and factory interface robots 142 disposed within the docking station 140 to facilitate substrate transfer. The docking station 140 is coupled to one or more front-opening unified pods (FOUPs) 144. In some embodiments, each factory interface robot 142 typically includes blades 148 disposed at one end of the respective factory interface robot 142, the factory interface robots being configured to transfer substrates from factory interface 102 to loading locking chambers 104, 106.

[0025] Loading and locking chambers 104 and 106 have corresponding ports 150 and 152 coupled to the factory interface 102 and corresponding ports 154 and 156 coupled to the transfer chamber 108. The transfer chamber 108 further has corresponding ports 158 and 160 coupled to the holding chambers 112 and 114 and corresponding ports 162 and 164 coupled to the processing chambers 120 and 122. Similarly, the transfer chamber 116 has corresponding ports 166 and 168 coupled to the holding chambers 112 and 114 and corresponding ports 170, 172, 174, and 176 coupled to the processing chambers 124, 126, 128, and 130. Ports 154, 156, 158, 160, 162, 164, 166, 168, 170, 172, 174, and 176 may be, for example, slit openings with slit valves for passing substrates through the transfer robots 110 and 118 and for providing a seal between the respective chambers to prevent gas transfer between them. Typically, any port is open for transferring substrates through it; otherwise, the port is closed.

[0026] Loading and locking chambers 104 and 106, transfer chambers 108 and 116, holding chambers 112 and 114, and processing chambers 120, 122, 124, 126, 128, and 130 are fluidly coupled to a gas and pressure control system. The gas and pressure control system may include one or more gas pumps (e.g., turbopumps, cryogenic pumps, low-vacuum pumps, etc.), gas sources, valves, and piping fluidly coupled to the respective chambers. In operation, a factory interface robot 142 transfers a substrate from FOUP 144 through port 150 or 152 to loading and locking chambers 104 or 106. The gas and pressure control system then evacuates loading and locking chambers 104 or 106. The gas and pressure control system further maintains transfer chambers 108 and 116 and holding chambers 112 and 114 in an internal low-pressure or vacuum environment (which may include an inert gas). Therefore, the vacuum loading locking chamber 104 or 106 facilitates the transfer of substrates between the atmospheric environment of, for example, the factory interface 102 and the low-pressure or vacuum environment of the transfer chamber 108.

[0027] Processing chambers 120, 122, 124, 126, 128, and 130 can be any suitable chamber for processing a substrate. In some examples, processing chamber 122 can perform a cleaning process; processing chamber 120 can perform an etching process; and processing chambers 124, 126, 128, and 130 can perform corresponding epitaxial growth processes. Processing chamber 122 can be SiCoNi available from Applied Materials, Inc., Santa Clara, California. TM Pre-cleaning chamber. Processing chamber 120 can be available from Applied Materials' Selectra product in Santa Clara, California. TMEtched chambers. It is also expected that additional chambers from other manufacturers will be included.

[0028] System controller 190 is coupled to processing system 100 for controlling processing system 100 or components thereof. For example, system controller 190 may control the operation of processing system 100 by directly controlling chambers 104, 106, 108, 112, 114, 116, 120, 122, 124, 126, 128, and 130 of processing system 100, or by controlling controllers associated with chambers 104, 106, 108, 112, 114, 116, 120, 122, 124, 126, 128, and 130. In operation, system controller 190 performs data collection and feedback from the respective chambers to coordinate the performance of processing system 100.

[0029] System controller 190 typically includes a central processing unit (CPU) 192, memory 194, and support circuitry 196. CPU 192 can be one of any type of general-purpose processor used in industrial settings. Memory 194, or a non-transitory computer-readable medium, is accessible by CPU 192 and can be one or more of the following: random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of digital storage (local or remote). Support circuitry 196 is coupled to CPU 192 and may include cache, clock circuitry, input / output subsystems, power supply, and the like. Various methods disclosed herein can typically be implemented by CPU 192 executing computer instruction code (e.g., as software routines) stored in memory 194 (or in memory of a specific processing chamber) under the control of CPU 192. When the computer instruction code is executed by CPU 192, CPU 192 controls the chamber to perform the process according to various methods.

[0030] Other processing systems may be configured differently. For example, more or fewer processing chambers may be coupled to a transfer device. In the illustrated example, the transfer device includes transfer chambers 108, 116 and holding chambers 112, 114. In other examples, more or fewer transfer chambers (e.g., one transfer chamber) and / or more or fewer holding chambers (e.g., no holding chambers) may be implemented as transfer devices in a processing system.

[0031] Figure 2This is a schematic cross-sectional view of an exemplary processing chamber 200 that can be used to perform batch multi-substrate processes, such as a baking process in a hydrogen atmosphere at a temperature of about 800°C. Epitaxial deposition operations are performed using separate processing chambers. Separate processing chambers may also be part of processing system 100 and may be a single substrate or a batch substrate system. In some embodiments, the apparatus disclosed herein can also be used for epitaxial deposition processes. The processing chamber 200 described herein can additionally be used for H2 baking of substrates to remove carbon / oxygen residues, HCl baking of substrates to etch undoped / doped silicon, epitaxial deposition of one or more layers (including Si, SiGe, SiGeB, SiB, SiP, etc.), and deposition of polycrystalline and amorphous silicon (doped or undoped). Processing chamber 200 can replace... Figure 1 Any of the processing chambers 120, 122, 124, 126, 128, and 130 may be used. Non-limiting examples of suitable processing chambers that can be modified according to the embodiments disclosed herein may include an RPEPI reactor commercially available from Applied Materials, Inc., Santa Clara, California. Processing chamber 200 may be added to an Applied Materials reactor available from Applied Materials, Inc., Santa Clara, California. Integrated processing system. Although the processing chamber 200 is described below for practicing the various embodiments described herein, other semiconductor processing chambers from different manufacturers may also be used to practice the embodiments described in this disclosure.

[0032] Processing chamber 200 includes a housing structure 202, a support system 204, and a controller 206. Housing structure 202 is made of a process-resistant material (such as aluminum or stainless steel). Housing structure 202 encloses various components of processing chamber 200, such as quartz chamber 208, which includes an upper portion 210 and a lower portion 212. Process accessories 214 are adapted to receive multiple substrates W within quartz chamber 208, which contains a processing volume 216.

[0033] As used herein, the term "substrate" refers to a layer of material used as the basis for subsequent processing operations and including a surface to be configured for forming a thin film. The substrate can be a silicon substrate, silicon oxide, strained silicon, germanium silicon, doped or undoped polycrystalline silicon, doped or undoped silicon substrate, patterned or unpatterned silicon-on-insulator (SOI) substrate, carbon-doped silicon oxide, silicon nitride, indium phosphide, germanium, gallium arsenide, gallium nitride, quartz, fused silicon oxide, glass, or sapphire. Furthermore, the substrate is not limited to any particular size or shape. The substrate can be a circular substrate with a diameter of 200 mm, 300 mm, or other diameters (such as 450 mm, etc.). The substrate can also be any polygonal, square, rectangular, curved, or other non-circular workpiece, such as a polygonal glass substrate.

[0034] Heating of the substrate W can be provided by radiation sources, such as one or more upper lamp modules 218 above the quartz chamber 208 in the Z direction and one or more lower lamp modules 220 below the quartz chamber 208 in the Z direction. In one embodiment, the upper lamp module 218 and the lower lamp module 220 are infrared lamps. Radiation from the upper lamp module 218 and the lower lamp module 220 travels through the upper quartz window 222 in the upper portion 210 and through the lower quartz window 224 in the lower portion 212.

[0035] One or more gases are supplied to the processing volume 216 of the quartz chamber 208 via the gas injection assembly 230, and processing byproducts are removed from the processing volume 216 via the gas discharge assembly 232, which is typically connected to a vacuum source (not shown).

[0036] Process accessory 214 further includes a plurality of cylindrical gaskets. The plurality of cylindrical gaskets include an inner gasket 234 and an outer gasket 236 shielding the processing volume 216 from the sidewall 242 of the housing structure 202. The inner gasket 234 includes one or more inlet holes 264 on the side facing the gas injection assembly 230 in the -X direction (hereinafter referred to as the "injection side") and one or more outlet holes 270 on the side facing the gas emission assembly 232 in the +X direction (hereinafter referred to as the "emission side"). The outer gasket 236 includes one or more inlet holes 260 on the injection side and one or more outlet holes 272 on the emission side. A first heater 400A, serving as an inlet heater, is disposed on the injection side between the inner gasket 234 and the outer gasket 236. A second heater 400B, serving as an emission heater, is disposed on the emission side between the inner gasket 234 and the outer gasket 236.

[0037] The internal liner 234 serves as the cylinder wall leading to the process volume 216, which accommodates a plurality of baffles 248 (e.g., in...). Figure 2 A housing 246 (shown with five partitions) is used to hold multiple substrates W for batch multi-substrate processes. Partitions 248 are staggered among the substrates W held in the housing 246, such that gaps exist between the partitions 248 and the substrates W to allow efficient mechanical transfer of substrates W to and from the partitions 248. The substrates W can be transferred via a transfer robot (such as...) through a slit opening (not shown) formed in an outer pad 236 on the front side facing the -Y direction. Figure 1 The transfer robots 110 and 118 shown convey the substrates into and from the processing volume 216. In some embodiments, the substrates W are conveyed one by one into and from the cassette 246. In some embodiments, the slit opening of the outer pad 236 is openable and closeable using a slit valve (not shown).

[0038] The process accessory 214 further includes a top plate 250 and a bottom plate 252 attached to the inner surface of the inner liner 234 and enclosing the cylindrical processing volume 216 within the process accessory 214. The top plate 250 and the bottom plate 252 are positioned at a sufficient distance from the partition 248 to allow gas flow above the substrate W held in the partition 248.

[0039] The internal liner 234 is formed of transparent quartz, silicon carbide (SiC) coated graphite, graphite, or silicon carbide (SiC). The top plate 250 and bottom plate 252 are formed of transparent quartz, opaque quartz, silicon carbide (SiC) coated graphite, graphite, silicon carbide (SiC), or silicon (Si), thereby reducing heat loss from the processing volume 216 through the top plate 250 and / or bottom plate 252. The partition 248 of the box 246 disposed within the processing volume 216 is also formed of materials such as silicon carbide (SiC) coated graphite, graphite, or silicon carbide (SiC). The external liner 236 is formed of a material with high reflectivity (such as opaque quartz) and further reduces heat loss from the processing volume 216 within the process fitting 214. In some embodiments, the outer liner 236 is formed in a hollow structure, wherein the vacuum between the inner surface of the outer liner 236 facing the inner liner 234 and the outer surface of the outer liner 236 facing the sidewall 242 of the housing structure 202 reduces heat conduction through the outer liner 236.

[0040] Gas can be injected into the processing volume 216 from a first gas source 254 (such as hydrogen (H2), nitrogen (N2), or any carrier gas) along with a second gas source 256 of the gas injection assembly 230, or without utilizing the second gas source 256 of the gas injection assembly 230. The inlet orifice 264 in the inner liner 234 is in fluid communication with the first gas source 254 and the second gas source 256 via an injection-inflation-pressurization chamber 258 formed in the sidewall 242 and an inlet orifice 260 formed in the outer liner 236. The injected gas forms a gas flow along a laminar flow path 266. The inlet orifices 260, 264 can be configured to provide gas flow with varying parameters (such as velocity, density, or composition).

[0041] Gas flowing along flow path 266 is configured to flow across processing volume 216 into discharge pressurization chamber 268 formed in sidewall 242 for discharge from processing volume 216 via gas discharge assembly 232. Gas discharge assembly 232 is in fluid communication with outlet orifice 270 formed in inner liner 234 and discharge pressurization chamber 268 via outlet orifice 272 formed in outer liner 236, thereby causing gas to peak in discharge flow path 278. Discharge pressurization chamber 268 is coupled to discharge element or vacuum pump (not shown). At least injection pressurization chamber 258 may be supported by injection cap 280. In some embodiments, processing chamber 200 is adapted to supply one or more liquids for processes such as deposition and etching processes. Furthermore, although in Figure 2 Only two gas sources 254 and 256 are shown in the diagram. The processing chamber 200 can be adapted to accommodate the many fluid connections required as a process performed in the processing chamber 200.

[0042] The support system 204 includes components for performing and monitoring predetermined processes in the processing chamber 200. The controller 206 is coupled to and adapted to control the processing chamber 200 and the support system 204.

[0043] The processing chamber 200 includes a lifting and rotating mechanism 282 positioned in the lower portion 212 of the outer casing structure 202. The lifting and rotating mechanism 282 includes a shaft 284 positioned within a shroud 286, coupled to the shroud 286 via a lifting rod (not shown) disposed through an opening (not marked) formed in a partition 248 of the process fitting 214. The shaft 284 is vertically movable in the Z direction to allow passage by a transfer robot (such as...) Figure 1The transfer robots 110, 118 shown load the substrate W into and unload the substrate W from the partition 248 through a slit opening (not shown) in the inner liner 234 and a slit opening (not shown) in the outer liner 236. The shaft 284 can also rotate to facilitate rotation of the substrate W, positioned within the process fitting 214, in the XY plane during processing. Rotation of the shaft 284 is facilitated by an actuator 288 coupled to the shaft 284. The position of the shield 286 is generally fixed and therefore does not rotate during processing.

[0044] The quartz chamber 208 includes peripheral flanges 290 and 292, which are attached to the sidewall 242 of the housing structure 202 and vacuum-sealed to the sidewall 242 using an O-ring 294 or other sealing mechanism. The peripheral flanges 290 and 292 may both be formed of opaque quartz to protect the O-ring 294 from direct exposure to heat radiation. The peripheral flange 290 may be formed of an optically transparent material (such as quartz).

[0045] In the example embodiments described herein, process accessory 214 includes one or more heaters 400A, 400B disposed between inner liner 234 and outer liner 236, which improve the temperature uniformity above each substrate W held in the partition 248 of the processing volume 216 by compensating for or reducing heat loss from the processing volume 216 near the edge of the substrate W.

[0046] Figure 3 yes Figure 2 A schematic cross-sectional plan view of the processing chamber 200. The processing chamber 200 includes a first heating assembly 302A and a second heating assembly 302B. The first heating assembly 302A includes a first heater 400A, two or more heater rods 304, and two or more sockets 303, 305. The second heating assembly 302B includes a second heater 400B, two or more heater rods 304, and two or more sockets 313, 315. The first heater 400A is an inlet heater and is adjacent to inlet openings 260, 264. Figure 2 The second heater 400B is the outlet heater and is located adjacent to outlet holes 270, 272. Figure 2 The plurality of heater rods 304 are configured to couple the first heater 400A and the second heater 400B to sockets 303, 305, 313, and 315.

[0047] Each of the first heater 400A and the second heater 400B is disposed within the outer pad 236 and the sidewall 242. The first heater 400A and the second heater are bent coils of resistance heating elements. The first heater 400A and the second heater 400B are bent such that a first side is recessed. A heater rod 304 is coupled to the side of the first heater 400A and the second heater 400B opposite to the recessed side. The heater rod 304 extends through at least a portion of the sidewall 242 and the outer pad 236. The heater rod 304 electrically couples the first heater 400A and the second heater 400B to each of the sockets 303, 305, 313, and 315.

[0048] The first heater 400A is coupled to the first heater rod of the heater rod 304 at the first heater-to-heater rod connection point 320, and is coupled to the second heater rods of the plurality of heater rods 304 at the second heater-to-heater rod connection point 322. The second heater 400B is coupled to the third heater rod of the heater rod 304 at the third heater-to-heater rod connection point 340, and is coupled to the fourth heater rod of the heater rod 304 at the fourth heater-to-heater rod connection point 342. Each of the heater rods 304 provides an electrical connection to the heaters 400A and 400B. Each of the heater rods 304 is coupled to one of the first heater 400A or the second heater 400B by screwing the heater rods 304 into the first heater 400A and the second heater 400B as the connection points described herein.

[0049] Heater rod 304 provides an electrical path to heaters 400A, 400B and minimizes heat loss that may occur through sidewall 242. Heater rod 304 is electrically and thermally coupled to heaters 400A, 400B at its distal end. Each heater rod 304 is coupled to a socket, such as one of sockets 303, 305, 313, 315 shown herein. Each of the heater rods 304 is coupled to a socket at its distal end. The cross-sectional area of ​​each heater rod 304 is larger than the cross-sectional area of ​​each portion of the coil of heaters 400A, 400B. This difference in cross-sectional area reduces the internal energy generated within the heater rod 304 due to the passage of electricity through it.

[0050] Heaters 400A and 400B are adapted to heat the edge of the substrate W held in the partition 248 and are used in conjunction with the upper lamp module 218 and the lower lamp module 220 to compensate for the internal pad 234. Figure 2 Heat loss from processing volume 216 is reduced in the vicinity. The combination of heaters 400A, 400B, upper lamp module 218, and lower lamp module 220 improves temperature uniformity throughout the substrate W and improves pre-cleaning operation.

[0051] In some embodiments, the temperature of the edge of the substrate W can be tuned to a predetermined temperature by adjusting the power supplied to the heaters 400A and 400B. Each heater 400A and 400B is powered by a separate power source, and each power source is independently controlled by a phase angle semiconductor controlled rectifier (SCR) controller. Using a temperature sensor 350 communicatively coupled to the SCR controller 352, one or both of the heaters 400A and 400B are controlled in an open loop and / or one or both of the heaters 400A and 400B are controlled in a closed loop. The temperature sensor 350 (such as a pyrometer) is configured to monitor the temperature of one or more substrates W disposed within the housing. The SCR controller 352 receives temperature data from the temperature sensor 350 and controls the power supplied to each of the heaters 400A and 400B based on the temperature of one or more substrates W. Specifically, the substrate W disposed at the center of the box 246 between the top plate 250 and the bottom plate 252 is heated by the first heater 400A and the second heater 400B.

[0052] The first heater 400A and the second heater 400B provide uniform heating to the substrate W disposed from the top to the bottom of the housing 246 and promote uniform heating from the center to the edge of each of the substrates W. Heat is radiatively transferred from the heaters 400A and 400B to the substrate W and / or convectively transferred to the gas flowing from the injection assembly 230 to the gas discharge assembly 232. An independent SCR controller 352 is used to adjust one or more of the heaters 400A and 400B to compensate for uneven energy loss to and from the sidewall 242 and to produce an isothermal container for multi-substrate batch processing. Each of the first heater 400A and the second heater 400B is configured to independently output energy at a rate of about 3 kW to about 10 kW. However, other power ranges are also contemplated.

[0053] The openings 308, 318 (e.g., slits) in the heaters allow unobstructed flow of gas between the inlet orifice 260 and the outlet orifice 272 of the outer liner 236. Heaters 400A, 400B also provide barriers to suppress heat loss from housing 246. The first heater 400A includes a first heater rod 304 coupled to a first end of the coil of the first heater 400A at a first heater-to-heater rod connection point 320 and a second heater rod 304 coupled to a second end of the coil of the first heater 400A at a second heater-to-heater rod connection point 322. The second heater 400B includes a first heater rod 304 coupled to a first end of the coil of the second heater 400B at a third heater-to-heater rod connection point 340 and a second heater rod 304 coupled to a second end of the coil of the second heater 400B at a fourth heater-to-heater rod connection point 342. Although each heater 400A, 400B is shown to have two heater-to-heater rod connection points 320, 322, 340, 342, it is contemplated that each heater 400A, 400B may include multiple heater sections. Each individual heater section of heater 400A, 400B may have an additional heater-to-heater rod connection point or may be coupled to another heater section.

[0054] Figures 4A to 4B This is a schematic side view of a process chamber heater element according to one embodiment. Figure 4A The figure shows a side view of the first heater 400A. Figure 4B The figure shows a side view of the second heater 400B. Each of the heaters 400A and 400B is bent to wrap around at least a portion of the circumference of the processing volume 216.

[0055] like Figure 3 As shown, two heaters 400A and 400B are arranged opposite to each other and at least partially surround the inner liner 234 and the housing 246. Additional heaters (not shown) may be arranged around other portions of the circumference of the processing volume 216. The first heater 400A is arranged on the injection side and the second heater 400B is arranged on the discharge side. The first heater 400A surrounds an arcuate portion of the periphery of the housing 246. The arcuate portion of the first heater 400A extends approximately 20 degrees to approximately 180 degrees around the housing 246, such as approximately 95 degrees to approximately 100 degrees around the housing 246.

[0056] Each of heaters 400A and 400B comprises a continuous coil 306. The coil 306 is arranged in a serpentine pattern and includes multiple turns and bends. The continuous coil 306 includes vertical portions 410 and 412 arranged parallel to each other and horizontal portions 414 and 416 arranged parallel to each other. Current from a power source (not shown) flows through the vertical portions 410 and 412 and resistively heats the coil 306. The coil 306 is arranged sufficiently closely and has a sufficiently large current flowing through it to heat the material of the coil 306. This heating is further amplified by the coil 306, which serves as an induction coil. The material of the coil 306 is a carbon-based material, such that the resistivity of the coil material is from about 500 Ω·cm to about 1500 Ω·cm, such as from about 750 Ω·cm to about 1250 Ω·cm. In some embodiments, the coil 306 is formed of a graphite material. Other materials forming the coil 306 may include paralytic graphite and silicon carbide. Paralyzing graphite and silicon carbide may include alternative resistivity ranges. In some embodiments, heaters 400A, 400B are permanently coupled to heater rods 304, such that each heater 400A, 400B includes a coil 306 formed as a single component and two heater rods 304. In some embodiments, the coil 306 and each of the two corresponding heater rods 304 are formed from a single piece of material (such as a piece of graphite) and are not individually screwed together.

[0057] Vertical portions 410 and 412 are spaced apart, and openings 308 and 318 are formed between the vertical portions 410 and 412 of coil 306. The opening 308 of the first heater 400A and the opening 318 of the second heater 400B are configured to be in fluid communication with the gas injection assembly and the exhaust injection assembly, respectively. The openings 308 and 318 are in the form of slits extending parallel to the vertical portions 410 and 412, thereby allowing effective heat generation and gas flow through the internal liner 234. The spatial arrangement and size of the plurality of slits can be adjusted to provide a desired temperature gradient. In one example, heaters 300A and 300B each have: a total coil length of approximately 1,000 mm to approximately 3,500 mm (e.g., approximately 2,700 mm) (e.g., the total distance along the coil path between heater rod connection points 320, 340 and heater rod connection points 322, 342); a coil width 402 of approximately 6 mm to approximately 10 mm (e.g., the width of the vertical portion of the coil); a thickness of approximately 4 mm to approximately 8 mm; and a height 406 of approximately 25 mm to approximately 150 mm. Each of the first heater 400A and the second heater 400B is curved and has a similar central axis. In the embodiments described herein, the outer radius of curvature of each of the first heater 400A and the second heater 400B is approximately 310 mm to approximately 500 mm, such as approximately 360 mm to approximately 460 mm. The slit width D1 between each of the vertical portions 410 and 412 is about 1 mm to about 5 mm, such as about 1 mm to about 3 mm, such as about 1.5 mm to about 2.5 mm.

[0058] Each of the first heater rod connection points 322 and 342 is located at one end of an arc formed by the first heater 400A and the second heater 400B, respectively. Each of the second heater rod connection points 320 and 340 is located inside the arc and includes a portion of a coil 306 disposed around the second heater rod connection points 320 and 340.

[0059] Figure 5 This is a schematic side view of a heater rod 304 according to one embodiment. The heater rod 304 is made of a similar material to the coil 306. The heater rod 304 may have a resistivity of about 500 Ω·cm to about 1500 Ω·cm, such as about 750 Ω·cm to about 1250 Ω·cm. Other materials forming the coil 306 may include paralyzed graphite and silicon carbide. Paralyzed graphite and silicon carbide may include alternative resistivity ranges. In some embodiments, the heater rod 304 is formed of a graphite material. The heater rod 304 is configured to provide power to a first heater 400A and a second heater 400B.

[0060] The heater rod 304 has an overall length L1 of approximately 100 mm to approximately 250 mm, such as approximately 150 mm to approximately 225 mm, such as approximately 175 mm to approximately 200 mm. The heater rod 304 is configured to extend through the sidewall 242 of the processing chamber 200. Figure 2 The heater rod 304 includes a central shaft 502 extending through the sidewall 242. The central shaft 502 has a diameter D2 of about 10 mm to about 15 mm, such as about 10 mm to about 13 mm, such as about 11 mm to about 12 mm. The central shaft 502 has a central length L2 of about 140 mm to about 175 mm, such as about 150 mm to about 160 mm.

[0061] The central shaft 502 is a cylindrical shaft and is linear. Each heater rod 304 further includes a fastening section 514, a shaft extension 516, and a first threaded section 518 disposed at a distal end of the central shaft 502. The fastening section 514 is connected to the central shaft 502 and disposed between the central shaft 502 and the shaft extension 516. The fastening section 514 is a non-cylindrical section and includes a plurality of planar surfaces extending between the central shaft 502 and the shaft extension 516. Each of the planar surfaces is configured to allow the fastening section 514 to be gripped using a wrench or other tightening device. In the embodiments described herein, the fastening section 514 includes six sides and is configured to allow the heater rod 304 to be tuned using a hex wrench. In still other embodiments, the fastening section 514 includes three or more sides, such as four sides, five sides, six sides, seven sides, eight sides, nine sides, or ten sides. In some embodiments, the distance between the two parallel sides of the fastening section 514 is about 8 mm to about 12 mm, such as about 9 mm to about 12 mm, such as about 10 mm to about 11 mm. The maximum diameter of the fastening section 514 is smaller than the diameter of the central shaft 502.

[0062] On the side of the fastening section 514 opposite the central shaft 502 is a shaft extension 516. The shaft extension 516 has a diameter similar to or smaller than the central shaft 502 and is cylindrical in shape. In the embodiment described herein, the diameter of the shaft extension 516 is the same as the diameter of the central shaft 502. The fastening section 514 is positioned between the central shaft 502 and the shaft extension 516 to allow a technician or tool to better access the fastening section 514 using a wrench or other fastening device. The diameters of the fastening section 514 and the shaft extension 516 are equal to or smaller than the diameter of the central shaft 502 to allow the end of the heater rod 304 having the fastening section 514 and the shaft extension 516 to be inserted through a hole in the sidewall 242. The hole is sized to receive the heater rod 304 and is similar in size to the central shaft 502 to allow the heater rod 304 to be pushed through the hole while minimizing heat loss through the hole.

[0063] A first threaded section 518 is provided on the distal end of the shaft extension 516 furthest from the fastening section 514. The first threaded section 518 also has a diameter equal to or smaller than the diameter of the central shaft 502. As described herein, the first threaded section 518 has a diameter smaller than the diameter of the central shaft 502. In some embodiments, the first threaded section 518 includes a male threaded outer surface to allow the first threaded section 518 to be inserted into and coupled to each of the heater rod connection points 320, 322, 340, 342 of the first heater 400A and the second heater 400B. In the embodiments described herein, the first threaded section 518 is a 1 / 4-16 thread to a 1 / 2-16 thread, such as a 3 / 8-16 thread.

[0064] An expansion section 508 is located at the distal end of the central shaft 502 opposite to the fastening section 514, the shaft extension 516, and the first threaded section 518. The expansion section 508 is connected to the central shaft 502 via a first chamfered surface 512. The first chamfered surface 512 extends between the distal end of the central shaft 502 and the distal end of the expansion section 508. The first chamfered surface 512 forms a transition portion of the shaft between the central shaft 502 and the expansion section 508, such that the first chamfered surface 512 forms a frustum of a cone, wherein the smaller diameter end is connected to the central shaft 502 and the larger diameter end is connected to the expansion section 508. The expansion section 508 has a larger diameter than the central shaft 502. The expansion section 508 has a diameter of approximately 13 mm to approximately 20 mm, such as approximately 15 mm to approximately 18 mm. The expansion section 508 is a cylindrical section extending from the central shaft 502. Expansion section 508 includes a passage 520 disposed through expansion section 508. Passage 520 is disposed from one side of expansion section 508 to the other side of expansion section 508 (such as opposite sides of expansion section 508). Passage 520 serves as an exhaust port for gas to travel through expansion section 508. Gas traveling through expansion section 508 reduces the accumulation of methane or other byproducts within heater rod 304. Second passage 522 is disposed through end surface 526 of heater rod 304. End surface 526 is disposed at the distal end of second threaded section 504 furthest from central shaft 502. Second passage 522 is disposed at a vertical angle ( Figure 6B It connects to the first passage and helps reduce the buildup of methane or other contaminants around the end of the heater rod 304.

[0065] At the farthest end of the expansion section 508 from the central shaft 502, a second chamfered surface 510 is provided. As the second chamfered surface 510 moves away from the expansion section 508, its diameter decreases. The second chamfered surface 510 also forms a frustum of a cone and is coupled to the expansion section 508 at its larger end and to the second threaded section 504 at its smaller end. Each of the first chamfered surface 512 and the second chamfered surface 510 is arranged at an angle of approximately 20 degrees to approximately 60 degrees relative to the outer surface 524 of the expansion section 508. The second threaded section 504 is provided at the end of the heater rod 304 opposite to the first threaded section 518. The second threaded section 504 has a larger diameter than the first threaded section 518. The outer surface of the second threaded section 504 is a male thread surface, allowing the second threaded section 504 to be screwed into and secured to sockets such as sockets 303, 305, 313, and 315. Figure 3 One of them. The second threaded section 504 is provided at the distal end of the heater rod 304 and has 1 / 4-20UNF to approximately 3 / 4-20UNF thread, such as approximately1 / 2-20UNF. Each end of the second threaded section 504 includes a wedge shape of about 45 degrees to about 75 degrees, such as a wedge shape of about 60 degrees.

[0066] Coating 530 is applied to the entire surface of each of the following: shaft extension 516, fastening section 514, central shaft 502, first chamfered surface 512, and portion of the outer surface 524 of expansion section 508. Coating 530 stops at expansion section 508 before reaching passage 520 or second chamfered surface 510. Coating 530 is applied to heater rod 304 to reduce the material exposure of heater rod 304 to precursors used within processing chamber 200. Coating 530, as described herein, is a silicon carbide (SiC) coating or a thermally decomposed boron nitride (pBN) coating. Although other coatings are envisioned for protecting the surface of heater rod 304, SiC and pBN have shown to have low reactivity with process precursors and maintain good properties at high processing temperatures. Coating 530 does not cover either the first threaded section 518 or the second threaded section 504, so as not to impair the ability of threaded sections 518, 504 to couple to other components. The coating 530 may further exclude sections of the heater rod 304 containing openings, such as passages 520, 522, or sections disposed within the connection to the heater. In some embodiments, the coating 530 is applied only to a portion of the shaft extension 516. Coating only a portion of the shaft extension 516 allows the shaft extension 516 to be disposed within and in contact with a portion of the connection points 320, 322, 340, 342.

[0067] Figure 6A This is a schematic cross-sectional view of one of the connection points 320, 322, 340, and 342. Figure 6AThe diagram specifically illustrates the connection point 320 from the first heater to the heater rod. Each of the connection points 320, 322, 340, and 342 has a similar structure and function. The first heater to heater rod connection point 320 includes a protrusion 608 projecting from one end of the coil 306. The protrusion 608 is disposed at the distal end of the coil 306 and includes a cavity 606 disposed within the protrusion 608. The cavity 606 includes a female heater thread 604. The female heater thread 604 is a female threaded section disposed in at least a portion of the cavity 606. The female heater thread 604 allows a first threaded section 518 to be screwed into it. The first threaded section 518 and the female heater thread 604 mate to facilitate easy connection of the heater rod 304 to the first heater 400A. In some embodiments, the heater rod 304 does not completely fill the cavity 606, and the cavity 606 includes an open space. In some embodiments, in the presence of hydrogen (H2), the higher temperature regions of heater 400A and heater rod 304 are prone to methane formation, which can contaminate the substrate and / or corrode the graphite used to form the first heater 400A and heater rod 304. The high-temperature region includes the connection between heater rod 304 and heater 400A at the first heater-to-heater rod connection point 320. The apparatus described herein helps to reduce methane generation and / or remove generated methane from the region surrounding heater rod 304.

[0068] To further help reduce methane escape into the processing chamber 200 and reduce the reaction between heaters 400A, 400B and heater rod 304, heaters 400A, 400B and heater rod 304 are coated with coating 530 after heater rod 304 is connected to heaters 400A, 400B.

[0069] Figure 6B This is a schematic cross-sectional view of one of sockets 303, 305, 313, and 315 when the heater rod 304 is installed in the socket. Figure 6B In the embodiments described herein, a first socket 303 of sockets 303, 305, 313, and 315 is described. Each of sockets 303 has similar device and function. As shown herein, a heater rod 304 passes through a sidewall 242 of the processing chamber 200 and is disposed through an opening. Socket 303 is coupled to an injection cap 620 disposed on the sidewall 242. Injection cap 620 further includes an opening through which the heater rod 304 is disposed. Injection cap 620 may be similar to... Figure 2 and Figure 3The injection cap 280 includes an opening through which one or more heater rods 304 are disposed. A socket 303 is configured to electrically couple the heater rods 304 to a power source (not shown) via a power line 628. The socket 303 electrically couples the heater rods 304 to the power line 628 and includes means for cooling the distal end of the heater rods 304 and removing contaminants (such as methane).

[0070] The socket 303 includes a power line 628 coupled to a through-hole 630. The through-hole 630 is coupled to a cooling plate 624. At one distal end, a heater rod 304 is disposed within and screwed into the through-hole 630. A through-hole insulator 634 is disposed between the through-hole 630 and the injection cap 620 to isolate the through-hole from the injection cap 620. The through-hole insulator 634 is also disposed around a portion of the heater rod 304. A through-hole spacer 632 is disposed around the through-hole insulator 634 and at least a portion of the through-hole 630.

[0071] The heater rod 304 is connected to the through-hole 630 at its distal end, furthest from the first heater to the heater rod connection point 320. The through-hole 630 is configured to surround a portion of the second threaded section 504 and the expansion section 508 of the heater rod 304. The through-hole 630 is shaped to surround a portion of the second threaded section 504 and the expansion section 508 such that the heater rod 304 is disposed within a cavity 688 within the through-hole 630. The cavity 688 includes a female threaded section for screwing the second threaded section 504 of the heater rod 304 into the female threaded section. The cavity 688 includes a volume at the end of the heater rod 304 and in fluid communication with the second passage 522.

[0072] A passage 520, passing through the expansion section 508 of the heater rod 304, is in fluid communication with a through-inert gas passage 642. The through-inert gas passage 642 passes through a through-hole 630 and is in fluid communication with the passage 520 of the heater rod 304 at its opening. In some embodiments, the opening is a circular hole or opening formed in the surface of the through-hole 630. In other embodiments, the through-inert gas passage 642 surrounds a portion of a cavity 688 in which the heater rod 304 is disposed. Surrounding a portion of the cavity 688 allows the through-inert gas passage 642 to be aligned with one of the openings of the passage 520, even if the passage 520 is not perfectly aligned (e.g., vertically) as shown. In some embodiments, the through-inert gas passage 642 surrounds at least 90 degrees, such as at least 120 degrees, such as at least 180 degrees, the circumference of the heater rod 304. In some embodiments, the through-inert gas passage 642 is an arc of approximately 180 degrees around the circumference of the cavity 688. The through-inert gas passage 642 is a diagonal passage and is positioned at an angle different from approximately 0 degrees and approximately 90 degrees to the outer surface 524 of the expansion section 508. In some embodiments, the through-inert gas passage 642 extends at an angle of approximately 20 degrees to approximately 70 degrees to the outer surface 524 of the expansion section 508 of the heater rod 304. The through-inert gas passage 642 connects the surfaces of the through-hole 630 that contact the heater rod 304 and the through-hole 630 that contact the cooling plate 624.

[0073] A through-inert gas passage 642 connects to a connecting passage 520 and a cooling plate inert gas passage 644 passing through a cooling plate 624. The cooling plate inert gas passage 644 includes a connecting channel 670. The connecting channel 670 is disposed within the surface of the cooling plate 624 between the cooling plate 624 and the through-pass 630. The connecting channel 670 is fluidly coupled to both the through-inert gas passage 642 and the cooling plate inert gas passage 644. The connecting channel 670 is a ring disposed around the surface of the cooling plate 624 that contacts the through-pass 630. The connecting channel 670 forms a ring to achieve fluid communication between the through-inert gas passage 642 and the cooling plate inert gas passage 644, even if the through-inert gas passage 642 is in a different location than the through-pass 630. Figure 6B The location shown is provided at the position shown. In some embodiments, the through inert gas passage 642 is provided on the lower part of the through passage 630 shown, but is still in fluid communication with the cooling plate inert gas passage 644 due to the connecting channel 670.

[0074] As described herein, the through-hole 630 comprises a metallic material or metal alloy to conduct electricity between the power source and the heater rod 304. In some embodiments, the through-hole 630 is a nickel through-hole. It has been found that the through-hole 630 formed of nickel material provides sufficient conductivity, ease of machining, and does not react with the material of the heater rod 304 or the purge gas.

[0075] A cooling plate inert gas passage 644 is disposed through the cooling plate 624 and configured to be fluidly coupled to an insulator passage 648 and a conduit passage 646. An insulator passage 648 is disposed through a cooling plate insulator 650, which is coupled to the top of the cooling plate 624. The cooling plate insulator 650 electrically and thermally insulates the cooling plate 624 from the conduit 647, electrically and thermally isolating the conduit 647 from the power line 628, and thermally isolating it from the cooling plate 624. The cooling plate insulator 650 is surrounded by a cooling plate spacer 652, which further separates the cooling plate 624 from the conduit 647. The cooling plate insulator 650 is formed of an electrically insulating material. In the embodiments described herein, the cooling plate insulator 650 is a material such as quartz, glass, or ceramic. Figure 6B The implementation method utilizes a quartz cooling plate insulator 650.

[0076] The cooling plate spacer 652 is formed of a polymer or plastic material. In the embodiment described herein, the cooling plate spacer 652 is formed of polyetheretherketone (PEEK) material. The PEEK material allows the cooling plate spacer 652 to withstand significant forces and elevated temperatures without deterioration.

[0077] A seal is formed between the cooling plate 624 and the cooling plate insulator 650 by a sealing ring 654 disposed in a sealing ring groove 660. A seal is formed between the cooling plate insulator 650 and the conduit 647 by a sealing ring 656 disposed in a sealing ring groove 658. The seal formed by the sealing rings 654 and 656 forms a sealed passage between the cooling plate inert gas passage 644 and the conduit passage 646. The conduit passage 646, the insulator passage 648, the cooling plate inert gas passage 644, and the through-inert gas passage 642 are all in fluid communication to allow inert gas to be supplied to the passage 520 disposed through the heater rod 304. Contaminants (such as methane) are also removed via the conduit passage 646, the insulator passage 648, the cooling plate inert gas passage 644, and the through-inert gas passage 642.

[0078] A seal is formed between the connecting channel 670 and the inert gas passage 642. The seal is formed by a first sealing ring 668 and a second sealing ring 664 disposed within a groove in the cooling plate 624. The first sealing ring 668 is disposed inside the connecting channel 670, while the second sealing ring 664 is disposed outside the connecting channel 670. The area between the first sealing ring 668 and the second sealing ring 664 is sealed to allow fluid to flow from the connecting channel 670 to the inert gas passage 642 without interacting with external contaminants.

[0079] A cooling passage 640 is disposed through a cooling plate 624. The cooling passage 640 delivers cooling fluid from a cooling fluid source 638 to the cooling plate 624. The cooling passage 640 and the cooling fluid circulating within it cool the cooling plate 624 and help maintain a low temperature at the distal end of the heater rod 304 disposed within a through-passage 630. The temperature of the through-passage 630 is also maintained by the cooling passage 640. The cooling passage 640 is connected to the cooling fluid source 638 at a cooling fluid line connection 636. The cooling fluid line connection 636 is configured to couple to a cooling fluid line. A through-passage insulator 634 is disposed between the through-passage 630 and the inlet cap 620. The through-passage insulator 634 electrically and thermally insulates the through-passage 630 from the inlet cap 620, thereby electrically isolating the inlet cap 620 from the through-passage 630 and the power line 628, and thermally isolating it from the through-passage 630.

[0080] The through-insulator 634 is a ring having an opening through which it passes. The through-insulator 634 includes a groove for a sealing ring 662 disposed in the inner surface of the opening. The sealing ring 662 within the through-insulator 634 fluidly seals the region surrounding the distal end of the heater rod 304 disposed within the through-insulator 634 from the region surrounding the remainder of the heater rod 304. Because the sealing ring 662 is in contact with the heater rod 304, it is subjected to high temperatures and extreme process conditions. Therefore, the sealing ring 662 described herein can be a highly durable sealing ring. The sealing ring 662 is a polymer or plastic having a hardness greater than 50 duro (e.g., greater than 60 duro, e.g., about 65 duro). In some embodiments, the sealing ring 662 is described as a heater rod sealing ring. A seal is formed between the through-insulator 634 and the injection cap 620 by a sealing ring 674 disposed in a groove on the outer surface of the injection cap 620. The sealing ring 674 prevents gas around the heater rod 304 from escaping into the atmosphere surrounding the socket 303.

[0081] The outer radial surface of the through-insulator 634 is surrounded by a through-spacer 632. The through-spacer 632 is similar to the cooling plate spacer 652, but separates the through-hole 630 and the cooling plate 624 from the injection cap 620. The through-spacer 632 is a ring surrounding the through-insulator 634.

[0082] The through-insulator 634 is formed of an electrically insulating material. In the embodiments described herein, the through-insulator 634 is a material such as quartz, glass, or ceramic. Figure 6B The embodiment utilizes a quartz through-insulator 634. The through-spacer 632 is formed of a polymer or plastic material. In the embodiment described herein, the through-spacer 632 is formed of polyetheretherketone (PEEK) material. The PEEK material allows the through-spacer 632 to withstand significant forces and elevated temperatures without deterioration. The injection cap 620 comprises a metal or metal alloy, such as stainless steel or aluminum.

[0083] Cover 626 couples power line 628 to through-hole 630. Cover 626 surrounds and clamps onto through-hole 630. Power line 628 is coupled to cover 626 such that when cover 626 is connected to and disposed on through-hole 630, power can be supplied to through-hole 630 via power line 628. Through-hole 630 then supplies power to heater rod 304 and heaters 400A, 400B. Cover 626 is made of metal or metal alloy, or other conductive material. In the embodiments described herein, cover 626 is a copper cover, such as a nickel-plated copper cover 626.

[0084] Each of the sealing rings 654, 656, 664, 668, and 674 described herein is a polymer or plastic ring. In some embodiments, the sealing rings 653, 665, 664, 668, and 674 are silicone rings, fluorocarbon rubber (FPM) rings, polytetrafluoroethylene (PTFE) rings, or perfluoroelastomer rings. Other sealing ring materials may also be used. The sealing rings 654, 656, 664, 668, and 674 described herein may be O-rings or other gaskets. The sealing rings 654, 656, 664, 668, and 674 may have a hardness greater than 50 duro, such as greater than 60 duro, such as about 65 duro.

[0085] As shown herein, a purge gas (such as hydrogen (H2) or argon (Ar)) is supplied via a purge gas source 681, flows through a purge gas conduit 683, and proceeds to a downstream portion 686 of the gas exhaust system. The downstream portion 686 is downstream of the processing chamber 200 and serves, for example, after exhaust, to reduce the likelihood of contaminants removed from the area surrounding the heater rod 304 contaminating the substrate disposed within the processing chamber 200. During processing, methane or other contaminant gases are removed via the purge gas conduit 683 attached to the conduit passage 646. Methane or other contaminant gases are removed by supplying purge gas via the purge gas source 681. Due to the supply of purge gas, methane generated around the heater rod 304 is passively removed by diffusion into the purge gas conduit 683 and subsequently swept away by the purge gas. Alternatively, the purge gas conduit 683 may be configured to supply purge gas to the conduit passage 646 and passages 520, 522 disposed through the heater rod 304 before purge gas is removed via the conduit passage 646 or another purge gas removal passage (not shown). The porosity of the heater rod 304 allows the purge gas to communicate with the rest of the heater rod 304 and the cavity 606 of the first heater 400A. This removes methane or other contaminants that form near the end of the heater rod 304 located in the first heater 400A. Removing methane or other contaminants reduces the chance of contamination of the substrate within the processing volume. In embodiments where argon purge gas is used, since argon does not react with graphite to form methane, methane generation and corrosion of the graphite within heaters 400A, 400B and the heater rod 304 are eliminated. Additional inert gases can be supplied via purge gas source 681 to exhaust gas from the heater rod 304 and passages 520, 522. Other inert gases include helium and nitrogen.

[0086] Each of the heater rods 304 utilizes a method similar to Figure 6B The socket 303 is a socket. In some embodiments, socket 303 is described as a first socket and each of sockets 305, 313, and 315 is a second socket, a third socket, and a fourth socket, respectively.

[0087] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

Claims

1. A heating system for substrate processing, comprising: The first heater includes a continuous heating coil; The first heater rod is coupled to the first connection point of the first heater; A second heater rod is coupled to a second connection point of the first heater, wherein each of the first heater rod and the second heater rod is configured to be screwed onto the first heater and includes a passage provided through each of the first heater rod and the second heater rod. A socket, coupled at a distal end opposite to the first heater to one of the first heater rod or the second heater rod, the socket comprising: A through-hole, coupled to the first heater rod or the second heater rod, and including a through-hole inert gas passage, the through-hole inert gas passage being fluidly coupled to the passage disposed through the first heater rod or the second heater rod; and A cooling plate is disposed around at least a portion of the through-hole.

2. The heating system of claim 1, wherein the socket is a first socket coupled to the first heater rod and the second socket coupled to the second heater rod.

3. The heating system of claim 2, wherein the second socket comprises: A second through-hole, coupled to the second heater rod and including a second through-hole inert gas passage, the second through-hole inert gas passage being fluidly coupled to a passage disposed through the second heater rod; and A second cooling plate is disposed around at least a portion of the second through-hole.

4. The heating system of claim 1, wherein the cooling plate further comprises: An inert gas passage for the cooling plate is formed between the first and second surfaces adjacent to the passage; A connecting channel is provided in the first surface of the cooling plate and fluidly connects the inert gas passage of the cooling plate and the through inert gas passage; and Cooling channels are provided through the cooling plate.

5. The heating system of claim 1, wherein the first heater rod further comprises: The first threaded section, at the first distal end, is configured to engage the first heater; The second threaded section is located at the second distal end; and The fastening section is provided between the central shaft of the first heater rod and the first threaded section.

6. The heating system of claim 1, wherein the socket further comprises: The power line is coupled to the passage; and A purified gas source is fluidly coupled to the through-inert gas passage.

7. The heating system of claim 1, wherein the through-hole is a nickel through-hole.

8. The heating system of claim 1, wherein each of the first heater rod and the second heater rod is based on a carbon-based material.

9. A socket assembly for coupling a heater rod to a substrate processing chamber, comprising: Through, including: A cavity containing a female threaded section and configured to receive the heater rod; and An inert gas passage is provided, and fluid is coupled to the cavity; and A cooling plate is disposed around at least a portion of the through-hole and comprises: Inert gas passage for cooling plate; A connecting channel is provided in the surface of the cooling plate and fluidly connects the inert gas passage of the cooling plate and the penetrating inert gas passage; and Cooling channels are provided through the cooling plate.

10. The socket assembly of claim 9, wherein the through-hole comprises metal or a metal alloy.

11. The socket assembly of claim 10, wherein the through-hole comprises a nickel material.

12. The socket assembly of claim 9, further comprising: The power line is coupled to the passage; and A purified gas source is fluidly coupled to the through-inert gas passage.

13. The socket assembly of claim 12, wherein the power line is coupled to the through-hole via a cover disposed around a protrusion on the through-hole.

14. The socket assembly of claim 9, further comprising a through-insulator disposed adjacent to the through-surface.

15. The socket assembly of claim 14, wherein the through-insulator comprises quartz, glass, or ceramic material.

16. The socket assembly of claim 14, wherein the through-insulator includes a heater rod sealing ring disposed on the inner surface of the through-insulator.

17. The socket assembly of claim 9, wherein the first sealing ring and the second sealing ring are disposed on opposite sides of the connection channel and form a seal between the through-hole and the cooling plate.

18. A heating system for substrate processing, comprising: The first heater includes a continuous heating coil; The first heater rod is coupled to the first connection point of the first heater; A second heater rod is coupled to a second connection point of the first heater, wherein each of the first heater rod and the second heater rod includes a passage disposed through each of the first heater rod and the second heater rod; A socket, coupled to one of the first heater rod or the second heater rod, the socket comprising: A through-hole, coupled to the first heater rod or the second heater rod, and including a through-hole inert gas passage, the through-hole inert gas passage being fluidly coupled to the passage disposed through the first heater rod or the second heater rod; and A cooling plate is disposed around at least a portion of the through passage, the cooling plate comprising a cooling plate inert gas passage fluidly coupled to the through inert gas passage, and a cooling channel disposed through the cooling plate.

19. The heating system of claim 18, wherein at least a portion of the first heater and the first heater rod and the second heater rod includes a coating disposed on the first heater and the at least a portion of the first heater rod and the second heater rod.

20. The heating system of claim 19, wherein the coating comprises a silicon carbide (SiC) coating or a thermally decomposed boron nitride (pBN) coating.

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