LED structure and GaN-based substrate, and manufacturing method of GaN-based substrate

Abstract

An LED structure and a GaN-based substrate and a method for manufacturing the GaN-based substrate. The GaN-based substrate comprises: a patterned substrate (10), comprising a plurality of recessed portions (10a) and a plurality of raised portions (10b); a metal Ga layer (12') located in the recessed portions (10a); and a second semiconductor layer (13) located on the metal Ga layer (12') and the raised portions (10b) exposed by the metal Ga layer (12'), wherein the material of the second semiconductor layer (13) is a GaN-based material. When the LED light-emitting structure is formed on the GaN-based substrate, the light emitted by the LED light-emitting structure can be emitted from the upper surface or side surface of the LED light-emitting structure after being reflected by the metal Ga layer, thereby reducing light absorption and improving the light emission efficiency of the LED light-emitting structure.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an LED structure and a GaN-based substrate thereof, and a method for manufacturing the GaN-based substrate. Background Art

[0002] Group III nitrides are the third generation of new semiconductor materials following the first and second generation semiconductor materials such as Si and GaAs. Among them, GaN as a wide bandgap semiconductor material has many advantages, such as high saturation drift velocity, large breakdown voltage, excellent carrier transport performance, and the ability to form AlGaN, InGaN ternary alloys and AlInGaN quaternary alloys, and it is easy to make GaN-based PN junctions. In view of this, GaN-based materials and semiconductor devices have been widely and deeply studied in recent years, and the MOCVD (Metal-organic Chemical Vapor Deposition) technology for growing GaN-based materials has become increasingly mature; in the research of semiconductor devices, GaN-based optoelectronic devices such as LEDs and LDs and GaN-based microelectronic devices such as HEMTs have achieved remarkable results and made great progress.

[0003] As the application of GaN-based materials in light-emitting devices gradually deepens, the industry's demand for the light output efficiency of terminal products is further increased. Summary of the invention

[0004] The purpose of the present invention is to provide an LED structure and a GaN-based substrate thereof, and a method for manufacturing the GaN-based substrate, so as to improve the light extraction efficiency of the LED structure.

[0005] To achieve the above object, a first aspect of the present invention provides a GaN-based substrate, comprising:

[0006] A patterned substrate including a plurality of concave portions and a plurality of convex portions;

[0007] a metal Ga layer located in the recessed portion; and

[0008] A second semiconductor layer is located on the metal Ga layer and the protruding portion exposed by the metal Ga layer, wherein the material of the second semiconductor layer is a GaN-based material.

[0009] Optionally, a first nucleation layer is provided between the recessed portion and the metal Ga layer, and between the raised portion and the second semiconductor layer, and a material of the first nucleation layer is AlGaN or AlN.

[0010] Optionally, a third nucleation layer is provided between the protrusion and the second semiconductor layer, and a material of the third nucleation layer is AlGaN or AlN.

[0011] Optionally, the patterned substrate is a patterned sapphire substrate.

[0012] A second aspect of the present invention provides an LED structure, comprising:

[0013] The GaN-based substrate described in any one of the above;

[0014] An LED light-emitting structure is located on the GaN-based substrate, and the LED light-emitting structure includes a semiconductor layer of a first conductivity type, a semiconductor layer of a second conductivity type, and a light-emitting layer located between the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, wherein the first conductivity type is opposite to the second conductivity type.

[0015] A third aspect of the present invention provides a method for manufacturing a GaN-based substrate, comprising:

[0016] Providing a patterned substrate, the patterned substrate comprising a plurality of recessed portions and a plurality of raised portions; epitaxially growing a first semiconductor layer on the recessed portions, wherein the material of the first semiconductor layer is GaN;

[0017] epitaxially growing a second semiconductor layer on the first semiconductor layer and the protruding portion exposed by the first semiconductor layer, wherein the material of the second semiconductor layer is a GaN-based material, and the material of the second semiconductor layer is different from the material of the first semiconductor layer; and the second semiconductor layer has a notch therein, and the notch penetrates the second semiconductor layer in a thickness direction;

[0018] At a temperature greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer through the gap to generate a metal Ga layer.

[0019] Optionally, the material of the second semiconductor layer is AlGaN or AlN.

[0020] Optionally, before the epitaxial growth of the first semiconductor layer, a first nucleation layer is grown on the patterned substrate, the first nucleation layer is conformally located on the patterned substrate, and the material of the first nucleation layer is AlGaN or AlN; the first semiconductor layer and the second semiconductor layer are epitaxially grown on the first nucleation layer.

[0021] Optionally, before the epitaxial growth of the first semiconductor layer, a second nucleation layer is grown at low temperature on the patterned substrate, the second nucleation layer is conformally located on the patterned substrate, and the material of the second nucleation layer is GaN; the first semiconductor layer is epitaxially grown on the second nucleation layer in the recessed portion, the second semiconductor layer is first epitaxially grown upward on the first semiconductor layer, and then laterally heals on the raised portion exposed by the first semiconductor layer, and then epitaxially grows the entire surface upward again.

[0022] Optionally, the patterned substrate is a patterned sapphire substrate.

[0023] A fourth aspect of the present invention provides a method for manufacturing a GaN-based substrate, comprising:

[0024] Providing a patterned substrate, the patterned substrate comprising a plurality of recessed portions and a plurality of raised portions; epitaxially growing a first semiconductor layer on the recessed portions, wherein the material of the first semiconductor layer is GaN;

[0025] At a temperature greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer to generate a metal Ga layer;

[0026] Epitaxial growth is performed on the protruding portion exposed by the metal Ga layer to form a second semiconductor layer covering the entire surface of the metal Ga layer, wherein the material of the second semiconductor layer is a GaN-based material.

[0027] Optionally, the material of the second semiconductor layer is AlGaN or AlN.

[0028] Optionally, before the epitaxial growth of the first semiconductor layer, a first nucleation layer is grown on the patterned substrate, the first nucleation layer is conformally located on the patterned substrate, and the material of the first nucleation layer is AlGaN or AlN; the first semiconductor layer and the second semiconductor layer are epitaxially grown on the first nucleation layer.

[0029] Optionally, before the epitaxial growth of the first semiconductor layer, a second nucleation layer is grown on the patterned substrate at low temperature, the second nucleation layer is conformally located on the patterned substrate, and the material of the second nucleation layer is GaN; the first semiconductor layer is epitaxially grown on the second nucleation layer in the recessed portion;

[0030] After the first semiconductor layer reacts to generate a metal Ga layer, a third nucleation layer is grown on the protruding portion exposed by the metal Ga layer, and the material of the third nucleation layer is AlGaN or AlN; the second semiconductor layer is epitaxially grown on the third nucleation layer.

[0031] Optionally, the patterned substrate is a patterned sapphire substrate.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] 1) The first semiconductor layer between the patterned substrate and the second semiconductor layer of the GaN-based material is processed to become a metal Ga layer to form a GaN-based substrate. When the LED light-emitting structure is formed on the GaN-based substrate, the light emitted by the LED light-emitting structure can be reflected by the metal Ga layer and then emitted from the upper surface or side surface of the LED light-emitting structure, thereby reducing light absorption and improving the light extraction efficiency of the LED light-emitting structure.

[0034] 2) In the optional scheme, after forming a GaN first semiconductor layer and a GaN-based material second semiconductor layer in sequence on a patterned substrate, hydrogen reacts with the GaN first semiconductor layer through the gaps in the second semiconductor layer to generate a metal Ga layer. Or 3) In the optional scheme, after forming a GaN first semiconductor layer on a patterned substrate, hydrogen is introduced to react with the GaN first semiconductor layer to generate a metal Ga layer, and then a GaN-based material second semiconductor layer covering the entire surface of the metal Ga layer is epitaxially grown on the raised portion of the patterned substrate. The above two methods are simple and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a flow chart of a method for manufacturing a GaN-based substrate according to a first embodiment of the present invention;

[0036] Figures 2 to 4 yes Figure 1 Schematic diagram of the intermediate structure corresponding to the process in;

[0037] Figure 5 is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to a first embodiment of the present invention;

[0038] Figure 6 and Figure 7 is a schematic diagram of an intermediate structure corresponding to a method for manufacturing a GaN-based substrate according to a second embodiment of the present invention;

[0039] Figure 8 is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to a second embodiment of the present invention;

[0040] Fig. 9 is a flow chart of a method for manufacturing a GaN-based substrate according to a third embodiment of the present invention;

[0041] Fig.10 yes Fig. 9 Schematic diagram of the intermediate structure corresponding to the process in;

[0042] Fig.11 is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to a third embodiment of the present invention;

[0043] Fig.12 is a schematic diagram of an intermediate structure corresponding to a method for manufacturing a GaN-based substrate according to a fourth embodiment of the present invention;

[0044] Fig.13 is a schematic cross-sectional structural diagram of a GaN-based substrate according to a fourth embodiment of the present invention;

[0045] Fig.14 FIG. 5 is a schematic cross-sectional view of an LED structure according to a fifth embodiment of the present invention.

[0046] To facilitate understanding of the present invention, all the reference numerals appearing in the present invention are listed below:

[0047] Patterned substrate 10 Depression 10a

[0048] Protrusion 10b First nucleation layer 11

[0049] The first semiconductor layer 12 and the second semiconductor layer 13

[0050] Gap 131 Metal Ga layer 12'

[0051] The second nucleation layer 14 and the third nucleation layer 15

[0052] GaN-based substrate 1, 2, 3, 4 light-emitting structure 5

[0053] The first conductivity type semiconductor layer 51 and the second conductivity type semiconductor layer 52

[0054] Light-emitting layer 53 DETAILED DESCRIPTION

[0055] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0056] Figure 1 It is a flow chart of a method for manufacturing a GaN-based substrate according to a first embodiment of the present invention. Figures 2 to 4 yes Figure 1 Schematic diagram of the intermediate structure corresponding to the process in . Figure 5 It is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to the first embodiment of the present invention.

[0057] First, refer to Figure 1 Step S1 in Figure 2 and Figure 3 As shown, a patterned substrate 10 is provided, and the patterned substrate 10 includes a plurality of recessed portions 10a and a plurality of raised portions 10b; a first semiconductor layer 12 is epitaxially grown in the recessed portions 10a, and the material of the first semiconductor layer 12 is GaN.

[0058] The material of the patterned substrate 10 may be sapphire, silicon carbide, silicon, silicon on insulator (SOI), lithium niobate or diamond.

[0059] In this embodiment, refer to Figure 2 As shown, before epitaxially growing the first semiconductor layer 12, a first nucleation layer 11 is grown on the patterned substrate 10, and the first nucleation layer 11 is conformally located on the patterned substrate 10. The material of the first nucleation layer 11 is AlGaN or AlN.

[0060] The first nucleation layer 11 can be a) a low-temperature nucleation layer, or b) a low-temperature nucleation layer is first formed, and then a high-temperature nucleation layer is formed on the low-temperature nucleation layer. Compared with the a) solution, the b) solution can reduce the defect density and material stress of the semiconductor layer subsequently epitaxially grown on the first nucleation layer 11, and improve the quality.

[0061] The epitaxial growth process of the first semiconductor layer 12 may include: atomic layer deposition (ALD), chemical vapor deposition (CVD), molecular beam epitaxy (MBE), plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), metal-organic chemical vapor deposition (MOCVD), or a combination thereof.

[0062] For example, when the first semiconductor layer 12 is epitaxially grown using MOCVD, the metal source may be trimethylgallium (TMGa), the N source may be NH 3 , the carrier gas may be H 2 , and the temperature may be greater than 300° C., preferably greater than 700° C.

[0063] Next, refer to Figure 1 Step S2 in Figure 4 As shown, a second semiconductor layer 13 is epitaxially grown on the first semiconductor layer 12 and the exposed protrusion 10b of the first semiconductor layer 12. The material of the second semiconductor layer 13 is a GaN-based material, and the material of the second semiconductor layer 13 is different from that of the first semiconductor layer 12. The second semiconductor layer 13 has a notch 131 therein, and the notch 131 penetrates the second semiconductor layer 13 in the thickness direction.

[0064] The material of the second semiconductor layer 13 may be at least one of AlN, InN, AlGaN, InGaN, AlInN and AlInGaN.

[0065] The epitaxial growth process of the second semiconductor layer 13 may refer to the epitaxial growth process of the first semiconductor layer 11. For example, when the second semiconductor layer 13 is epitaxially grown using the MOCVD method, the metal source may be trimethyl gallium (TMGa) and trimethyl aluminum (TMAl), the N source may be NH3, the carrier gas may be H2, and the temperature may be greater than 300°C, preferably greater than 700°C.

[0066] Since the second semiconductor layer 13 is made of a different material from the first semiconductor layer 11 , there is a lattice mismatch between the two layers, resulting in a gap 131 in the second semiconductor layer 13 .

[0067] Afterwards, refer to Figure 1 Step S3 in Figure 4 and Figure 5 As shown, when the temperature is greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer 12 through the gap 131 to generate a metal Ga layer 12 ′.

[0068] At high temperatures, for example, when the temperature is greater than 300° C., the chemical equation for the reaction between hydrogen and the first semiconductor layer 12 is:

[0069] 3H2+2GaN=2Ga(l)+2NH3↑.

[0070] It should be noted that the temperature at which hydrogen reacts with the first semiconductor layer 12 should be lower than the boiling point of metal Ga.

[0071] The above-mentioned high temperature and H2 supply can be achieved by stopping the supply of the metal source and N source for epitaxially growing the second semiconductor layer 13 and only supplying the carrier gas. The advantages are: it is carried out in the same reaction chamber without transferring the chamber, which can avoid the pollution introduced during the transfer process, and can also avoid the re-heating process, thereby improving the production efficiency.

[0072] The metal Ga layer 12 ′ has a reflective property. Since H2 does not react with the second semiconductor layer 13 , the embodiment uses the gap 131 to realize the formation of a reflective layer between the second semiconductor layer 13 and the patterned substrate 10 .

[0073] Figure 5 It is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to the first embodiment of the present invention.

[0074] Reference Figure 5 As shown, the GaN-based substrate 1 of this embodiment includes:

[0075] The patterned substrate 10 includes a plurality of recessed portions 10a and a plurality of raised portions 10b (see Figure 2 shown);

[0076] a metal Ga layer 12' located in the recessed portion 10a; and

[0077] The second semiconductor layer 13 is located on the metal Ga layer 12 ′ and the protruding portion 10 b exposed by the metal Ga layer 12 ′. The material of the second semiconductor layer 13 is a GaN-based material.

[0078] The material of the substrate 10 may be sapphire, silicon carbide, silicon, silicon on insulator (SOI), lithium niobate or diamond.

[0079] The material of the second semiconductor layer 13 may be at least one of AlN, InN, AlGaN, InGaN, AlInN and AlInGaN.

[0080] There is a first nucleation layer 11 between the concave portion 10 a and the metal Ga layer 12 ′, and between the convex portion 10 b and the second semiconductor layer 13 . The material of the first nucleation layer 11 is AlGaN or AlN.

[0081] Figure 6 and Figure 7 It is a schematic diagram of the intermediate structure corresponding to the method for manufacturing a GaN-based substrate according to the second embodiment of the present invention. Figure 8 It is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to the second embodiment of the present invention.

[0082] Reference Figures 6 to 8 As shown, the manufacturing method of the GaN-based substrate 2 of the second embodiment is substantially the same as the manufacturing method of the GaN-based substrate 1 of the first embodiment, and the only difference is that:

[0083] In step S1, refer to Figure 6 As shown, before the epitaxial growth of the first semiconductor layer 12, the second nucleation layer 14 is grown at low temperature on the patterned substrate 10, and the second nucleation layer 14 is conformally located on the patterned substrate 10. The material of the second nucleation layer 14 is GaN.

[0084] Reference Figure 7 As shown, since the epitaxial growth of the first semiconductor layer 12 is a high-temperature process, the second nucleation layer 14 grown at a low temperature will be heated and crystallized again, and the second nucleation layer 14 on the convex arc surface, especially the second nucleation layer 14 on the top surface of the convex portion 10b, will slide down to the upper surface of the concave portion 10a. Figure 8 As shown, the second semiconductor layer 13 first grows epitaxially upward on the first semiconductor layer 12 ; then laterally heals on the exposed protrusion 10 b of the first semiconductor layer 12 ; and then grows epitaxially upward on the entire surface.

[0085] Fig. 9 It is a flow chart of a method for manufacturing a GaN-based substrate according to a third embodiment of the present invention. Fig.10 yes Fig. 9 Schematic diagram of the intermediate structure corresponding to the process in . Fig.11It is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to the third embodiment of the present invention.

[0086] Reference Fig. 9 As shown, the manufacturing method of the GaN-based substrate 3 of the third embodiment is substantially the same as the manufacturing method of the GaN-based substrate 1 of the first embodiment, and the only difference is that:

[0087] In step S2', refer to Fig.10 As shown, when the temperature is greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer 12 to generate a metal Ga layer 12′:

[0088] In step S3', refer to Fig.11 As shown, epitaxial growth is performed on the protruding portion 10 b exposed by the metal Ga layer 12 ′ to form a second semiconductor layer 13 covering the entire surface of the metal Ga layer 12 ′. The material of the second semiconductor layer 13 is a GaN-based material.

[0089] Specifically, the reaction conditions of step S2' may refer to the reaction conditions of step S3 of the aforementioned embodiment.

[0090] In step S3', since the first nucleation layer 11 is grown on the patterned substrate 10 before the first semiconductor layer 12 is epitaxially grown, the second semiconductor layer 13 firstly grows epitaxially upward on the first nucleation layer 11, then laterally heals on the metal Ga layer 12', and then grows epitaxially upward on the entire surface.

[0091] Accordingly, refer to Fig.11 As shown, the GaN-based substrate 3 of the third embodiment is substantially the same as the GaN-based substrate 1 of the first embodiment.

[0092] Fig.12 It is a schematic diagram of the intermediate structure corresponding to the method for manufacturing a GaN-based substrate according to the fourth embodiment of the present invention. Fig.13 It is a schematic diagram of the cross-sectional structure of a GaN-based substrate according to the fourth embodiment of the present invention.

[0093] Reference Fig.12 As shown, the manufacturing method of the GaN-based substrate 4 of the fourth embodiment is substantially the same as the manufacturing method of the GaN-based substrate 3 of the third embodiment, and the only difference is that:

[0094] In step S1', before epitaxially growing the first semiconductor layer 12, a second nucleation layer 14 is grown at low temperature on the patterned substrate 10, and the second nucleation layer 14 is conformally located on the patterned substrate 10. The material of the second nucleation layer 14 is GaN.

[0095] Since the epitaxial growth of the first semiconductor layer 12 is a high-temperature process, the second nucleation layer 14 grown at a low temperature will be heated and crystallized again, and the second nucleation layer 14 on the convex arc surface, especially the second nucleation layer 14 on the top surface of the convex portion 10b, will slide down to the upper surface of the concave portion 10a. In this way, in step S3', the third nucleation layer 15 is grown on the exposed convex portion 10b of the metal Ga layer 12', and the material of the third nucleation layer 15 is AlGaN or AlN; the second semiconductor layer 13 first grows epitaxially upward on the third nucleation layer 15; then it is laterally healed on the metal Ga layer 12'; and then the entire surface is epitaxially grown upward.

[0096] The third nucleation layer 15 can be grown entirely on the metal Ga layer 12 ′ and the protrusion 10 b exposed by the metal Ga layer 12 ′. Since the metal Ga layer 12 ′ is liquid at high temperature, the second semiconductor layer 13 first grows epitaxially upward on the third nucleation layer 15 on the protrusion 10 b.

[0097] Fig.14 FIG. 5 is a schematic cross-sectional view of an LED structure according to a fifth embodiment of the present invention.

[0098] Reference Fig.14 As shown, the LED structure includes:

[0099] The GaN-based substrate 1, 2, 3, 4 of any of the above embodiments;

[0100] An LED light emitting structure 5 is located on a GaN-based substrate 1, 2, 3, 4, and includes a semiconductor layer 51 of a first conductivity type, a semiconductor layer 52 of a second conductivity type, and a light emitting layer 53 located between the semiconductor layer 51 of the first conductivity type and the semiconductor layer 52 of the second conductivity type, wherein the first conductivity type is opposite to the second conductivity type.

[0101] The materials of the first conductivity type semiconductor layer 51 , the light emitting layer 53 and the second conductivity type semiconductor layer 52 can all be group III-V compounds, such as GaN-based materials.

[0102] The light emitting layer 53 may include at least one of a single quantum well structure, a multi-quantum well (MQW) structure, a quantum wire structure, and a quantum dot structure. The light emitting layer may include a well layer and a barrier layer.

[0103] Reference Fig.14 As shown, the light emitted by the LED light emitting structure 5 can be emitted from the upper surface or side surface of the LED light emitting structure 5 after being reflected by the metal Ga layer 12 ′, thereby reducing light absorption and improving the light extraction efficiency of the LED light emitting structure 5 .

[0104] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A GaN-based substrate, characterized in that: include: A patterned substrate (10) comprising a plurality of recessed portions (10a) and a plurality of raised portions (10b); a metal Ga layer (12') located in the recessed portion (10a); as well as a second semiconductor layer (13) located on the metal Ga layer (12') and the protruding portion (10b) exposed by the metal Ga layer (12'), wherein the material of the second semiconductor layer (13) is a GaN-based material; The metal Ga layer (12') is formed by the reaction of hydrogen with a first semiconductor layer (12) epitaxially grown in the recessed portion (10a), wherein the material of the first semiconductor layer (12) is GaN.

2. The GaN-based substrate according to claim 1, characterized in that A first nucleation layer (11) is provided between the recessed portion (10a) and the metal Ga layer (12'), and between the raised portion (10b) and the second semiconductor layer (13), and the material of the first nucleation layer (11) is AlGaN or AlN.

3. The GaN-based substrate according to claim 1, characterized in that A third nucleation layer (15) is provided between the protruding portion (10b) and the second semiconductor layer (13), and the material of the third nucleation layer (15) is AlGaN or AlN.

4. The GaN-based substrate according to claim 1, characterized in that The patterned substrate (10) is a patterned sapphire substrate.

5. An LED structure, characterized in that: include: The GaN-based substrate according to any one of claims 1 to 4; An LED light-emitting structure (5) located on the GaN-based substrate, the LED light-emitting structure comprising a semiconductor layer (51) of a first conductivity type, a semiconductor layer (52) of a second conductivity type, and a light-emitting layer (53) located between the semiconductor layer (51) of the first conductivity type and the semiconductor layer (52) of the second conductivity type, wherein the first conductivity type is opposite to the second conductivity type.

6. A method for manufacturing a GaN-based substrate, characterized in that: include: A patterned substrate (10) is provided, wherein the patterned substrate (10) comprises a plurality of recessed portions (10a) and a plurality of raised portions (10b); a first semiconductor layer (12) is epitaxially grown on the recessed portions (10a), wherein the material of the first semiconductor layer (12) is GaN; epitaxially growing a second semiconductor layer (13) on the first semiconductor layer (12) and the protruding portion (10b) exposed by the first semiconductor layer (12), wherein the material of the second semiconductor layer (13) is a GaN-based material, and the material of the second semiconductor layer (13) is different from the material of the first semiconductor layer (12); and the second semiconductor layer (13) has a notch (131) therein, and the notch (131) penetrates the second semiconductor layer (13) in a thickness direction; At a temperature greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer (12) through the gap (131) to generate a metal Ga layer (12′).

7. The method for manufacturing a GaN-based substrate according to claim 6, characterized in that: The material of the second semiconductor layer (13) is AlGaN or AlN.

8. The method for manufacturing a GaN-based substrate according to claim 6, characterized in that: Before the epitaxial growth of the first semiconductor layer (12), a first nucleation layer (11) is grown on the patterned substrate (10), the first nucleation layer (11) is conformally located on the patterned substrate (10), and the material of the first nucleation layer (11) is AlGaN or AlN; the first semiconductor layer (12) and the second semiconductor layer (13) are epitaxially grown on the first nucleation layer (11).

9. The method for manufacturing a GaN-based substrate according to claim 6, characterized in that: Before the epitaxial growth of the first semiconductor layer (12), a second nucleation layer (14) is grown at low temperature on the patterned substrate (10); the second nucleation layer (14) is conformally located on the patterned substrate (10); the material of the second nucleation layer (14) is GaN; the first semiconductor layer (12) is epitaxially grown on the second nucleation layer (14) of the recessed portion (10a); the second semiconductor layer (13) is first epitaxially grown upward on the first semiconductor layer (12), and then laterally heals on the raised portion (10b) exposed by the first semiconductor layer (12), and then epitaxially grows upward on the entire surface.

10. The method for manufacturing a GaN-based substrate according to claim 6, characterized in that: The patterned substrate (10) is a patterned sapphire substrate.

11. A method for manufacturing a GaN-based substrate, characterized in that: include: A patterned substrate (10) is provided, wherein the patterned substrate (10) comprises a plurality of recessed portions (10a) and a plurality of raised portions (10b); a first semiconductor layer (12) is epitaxially grown on the recessed portions (10a), wherein the material of the first semiconductor layer (12) is GaN; At a temperature greater than 300° C., hydrogen is introduced, and the hydrogen reacts with the first semiconductor layer (12) to generate a metal Ga layer (12′); Epitaxial growth is performed on the protruding portion (10b) exposed on the metal Ga layer (12') to form a second semiconductor layer (13) covering the entire surface of the metal Ga layer (12'); the material of the second semiconductor layer (13) is a GaN-based material.

12. The method for manufacturing a GaN-based substrate according to claim 11, characterized in that: The material of the second semiconductor layer (13) is AlGaN or AlN.

13. The method for manufacturing a GaN-based substrate according to claim 11, characterized in that: Before the epitaxial growth of the first semiconductor layer (12), a first nucleation layer (11) is grown on the patterned substrate (10), the first nucleation layer (11) is conformally located on the patterned substrate (10), and the material of the first nucleation layer (11) is AlGaN or AlN; the first semiconductor layer (12) and the second semiconductor layer (13) are epitaxially grown on the first nucleation layer (11).

14. The method for manufacturing a GaN-based substrate according to claim 11, characterized in that: Before the epitaxial growth of the first semiconductor layer (12), a second nucleation layer (14) is grown at low temperature on the patterned substrate (10), the second nucleation layer (14) is conformally located on the patterned substrate (10), and the material of the second nucleation layer (14) is GaN; the first semiconductor layer (12) is epitaxially grown on the second nucleation layer (14) in the recessed portion (10a); After the first semiconductor layer (12) reacts to generate a metal Ga layer (12'), a third nucleation layer (15) is grown on the protruding portion (10b) exposed by the metal Ga layer (12'), and the material of the third nucleation layer (15) is AlGaN or AlN; and the second semiconductor layer (13) is epitaxially grown on the third nucleation layer (15).

15. The method for manufacturing a GaN-based substrate according to claim 11, characterized in that: The patterned substrate (10) is a patterned sapphire substrate.

Images