Etching liquid composition, method for manufacturing metal pattern using the same, and method for manufacturing display device

Abstract

Disclosed are an etching solution composition, a method of manufacturing a metal pattern using the same, and a method of manufacturing a display device, the etching solution composition according to an embodiment of the present invention including: 8 wt% or more and 15 wt% or less of nitric acid; 3 wt% or more and 8 wt% or less of an alkyl sulfonic acid; 25 wt% or more and 55 wt% or less of an organic acid; 15 wt% or more and 25 wt% or less of a sulfate; 0.01 wt% or more and 1.0 wt% or less of a metal salt; 0.5 wt% or more and 7 wt% or less of a nitrate; and water such that the total weight of the overall composition is 100 wt%.

Description

Technical Field

[0001] The present invention relates to an etching solution composition and a method for manufacturing a metal pattern thereon and a method for manufacturing a display device, and more specifically, to an etching solution composition provided for etching a multilayer metal film and a method for manufacturing a metal pattern thereon and a method for manufacturing a display device. Background Technology

[0002] Various wirings and electrodes in display devices can be formed using patterning processes such as photolithography, including etching. However, when wirings or electrodes are composed of multilayer films with different properties, there are limitations to forming wirings or electrodes with desired characteristics through simultaneous etching. Furthermore, the etching solutions used in the past for etching wirings contained phosphoric acid. Therefore, during the etching process, the phosphoric acid can damage other wirings within the display device, and silver ions are reduced and precipitated in this process, potentially resulting in defects caused by silver particles. Summary of the Invention

[0003] The purpose of this invention is to provide an etching solution composition capable of etching a metal layer containing silver and a method for manufacturing a display device using the same.

[0004] An etching solution composition according to an embodiment of the present invention comprises: 8% to 15% by weight of nitric acid; 3% to 8% by weight of alkyl sulfonic acid; 25% to 55% by weight of organic acid; 15% to 25% by weight of sulfate; 0.01% to 1.0% by weight of metal salt; 0.5% to 7% by weight of nitrate; and water such that the total weight of the entire composition is 100% by weight.

[0005] The metal salt may contain at least one of zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium.

[0006] It is possible that the stability constant of the metal salt is 25.3 or higher.

[0007] The nitrate may include at least one of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate.

[0008] The alkyl sulfonic acid may include at least one of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid.

[0009] The organic acid may include at least one of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid.

[0010] The sulfate may include at least one of potassium bisulfate, sodium bisulfate, and ammonium bisulfate.

[0011] A method for manufacturing a metal pattern according to an embodiment of the present invention includes: a step of forming a metal layer comprising silver on a substrate; a step of forming a photoresist pattern on the metal layer; a step of patterning the metal layer with an etchant composition using the photoresist pattern as a mask; and a step of removing the photoresist pattern, wherein the etchant composition comprises: 8% to 15% by weight of nitric acid; 3% to 8% by weight of alkyl sulfonic acid; 25% to 55% by weight of organic acid; 15% to 25% by weight of sulfate; 0.01% to 1.0% by weight of metal salt; 0.5% to 7% by weight of nitrate; and water such that the total weight of the entire composition is 100% by weight.

[0012] The metal layer may include: a first conductive film; a metal film disposed on the first conductive film and containing the silver; and a second conductive film disposed on the metal film, wherein the first conductive film and the second conductive film are independently transparent or semi-transparent electrodes.

[0013] The metal salt may contain at least one of zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium.

[0014] It is possible that the stability constant of the metal salt is 25.3 or higher.

[0015] The nitrate may include at least one of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate.

[0016] The alkyl sulfonic acid may include at least one of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid.

[0017] The organic acid may include at least one of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid.

[0018] The sulfate may include at least one of potassium bisulfate, sodium bisulfate, and ammonium bisulfate.

[0019] A method for manufacturing a display device according to an embodiment of the present invention includes: a step of forming a thin-film transistor on a substrate; a step of forming a planarization layer on the thin-film transistor; a step of forming an electrode layer on the planarization layer; and a step of etching the electrode layer with an etching solution composition to form a pixel electrode, the etching solution composition comprising: 8% by weight or more and 15% by weight of nitric acid; 3% by weight or more and 8% by weight of alkyl sulfonic acid; 25% by weight or more and 55% by weight of organic acid; 15% by weight or more and 25% by weight of sulfate; 0.01% by weight or more and 1.0% by weight of metal salt; 0.5% by weight or more and 7% by weight of nitrate; and water such that the total weight of the entire composition is 100% by weight.

[0020] The electrode layer may contain silver.

[0021] The steps of forming the electrode layer may include: forming a first conductive film on the planarization layer; forming a silver-containing metal film on the first conductive film; and forming a second conductive film on the metal film.

[0022] Alternatively, the first conductive film and the second conductive film may be independently transparent or semi-transparent electrodes.

[0023] The step of forming the pixel electrode may include: forming the electrode layer; forming a photoresist pattern on the electrode layer; and using the photoresist pattern as a mask to pattern the electrode layer with the etching solution composition.

[0024] The etching solution composition according to an embodiment of the present invention can simultaneously etch the silver-containing electrode layer while preventing silver ions from being reduced and precipitated. This improves the reliability of the display device. Attached Figure Description

[0025] Figures 1a to 1e This is a diagram illustrating the steps of a method for manufacturing a metal pattern using an etchant composition of one embodiment.

[0026] Figure 2 This is a perspective view of a display device according to an embodiment of the present invention.

[0027] Figure 3 This is a cross-sectional view of a display device according to an embodiment of the present invention.

[0028] Figure 4 This is a cross-sectional view of a display panel according to an embodiment of the present invention.

[0029] Figure 5a This is a plan view of a display panel according to an embodiment of the present invention.

[0030] Figure 5b This is a cross-sectional view of a display panel according to an embodiment of the present invention.

[0031] Figure 6a This is a plan view showing the pad area of ​​a display panel according to an embodiment of the present invention.

[0032] Figure 6b This is a cross-sectional view showing the pad area of ​​a display panel according to an embodiment of the present invention.

[0033] Figure 7 This is a flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention.

[0034] Figures 8a to 8h This is a diagram that briefly illustrates the steps of a method for manufacturing a display device according to an embodiment of the present invention.

[0035] Figure 9 This is a diagram illustrating the formation of a metal pattern using an etching solution composition according to an embodiment of the present invention and an etching solution composition according to a comparative example.

[0036] (Explanation of reference numerals in the attached diagram)

[0037] ML: Metallic pattern; ML1: First conductive pattern

[0038] ML2: Second conductive pattern; PRP: Photoresist pattern Detailed Implementation

[0039] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0040] In this specification, when a constituent element (or region, layer, part, etc.) is referred to as being "on", "connected to", or "in conjunction with" other constituent elements, it means that it can be directly connected to / in conjunction with other constituent elements or that a third constituent element can be disposed between them.

[0041] The same reference numerals refer to the same constituent elements. Furthermore, in the drawings, the thickness, scale, and dimensions of the constituent elements are enlarged for the purpose of effectively illustrating the technical content. "And / or" includes all combinations of the relevant constituent elements that can be defined.

[0042] The terms "first," "second," etc., can be used to describe various constituent elements, but the constituent elements described above are not limited by these terms. These terms are used only to distinguish one constituent element from another. For example, without departing from the scope of the invention, a first constituent element can be named a second constituent element, and similarly, a second constituent element can be named a first constituent element. Singular expressions include plural expressions unless explicitly stated otherwise in the context.

[0043] In addition, terms such as "above," "below," "under," and "upper" are used to describe the relationship between the constituent elements shown in the accompanying drawings. These terms are relative concepts and are explained based on the directions indicated in the drawings.

[0044] Terms such as “including” or “having” should be understood as indicating the presence of features, numbers, steps, operations, constituent elements, components, or combinations thereof as described in the specification, and do not preclude the existence or additional possibilities of one or more other features, numbers, steps, operations, constituent elements, components, or combinations thereof.

[0045] In the instruction manual, "direct configuration" can mean that there are no additional layers, films, areas, plates, etc. between the parts and other parts. For example, "direct configuration" can mean that two layers or two components are configured without the use of additional components such as adhesive parts.

[0046] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning in the context of the relevant art, and shall not be construed as having overly idealized or formalistic meanings unless explicitly defined herein.

[0047] Hereinafter, an etching solution composition according to an embodiment of the present invention will be described.

[0048] The etching solution composition according to an embodiment of the present invention can be used to etch a metal film to form a metal pattern. The etching solution composition according to an embodiment of the present invention can be used to etch a metal film containing silver (Ag) or a silver alloy. For example, the etching solution composition of one embodiment can be used to etch a metal film containing silver to form a metal pattern.

[0049] The etching solution composition according to an embodiment of the present invention can be used for etching multilayer metal layers composed of metal films containing silver or silver alloys. Specifically, the etching solution composition according to an embodiment of the present invention can be used to etch a metal layer composed of a first conductive film containing a transparent conductive material, a metal film disposed on the first conductive film and containing silver or silver alloys, and a second conductive film disposed on the metal film and containing a transparent conductive material. Alternatively, the etching solution composition according to an embodiment of the present invention can be used to etch a metal layer composed of a bilayer of a first conductive film containing a transparent conductive material and a metal film disposed on the first conductive film and containing silver or silver alloys.

[0050] Transparent conductive materials can include at least one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-tin-zinc-oxide (ITZO), and indium-gallium-zinc-oxide (IGZO). Silver alloys can be silver-based and can take various forms, including alloys of other metals such as neodymium (Nd), copper (Cu), palladium (Pd), niobium (Nb), nickel (Ni), molybdenum (Mo), chromium (Cr), magnesium (Mg), tungsten (W), praseodymium (Pa), and titanium (Ti), as well as silver nitrides, silver silicides, silver carbides, or silver oxides.

[0051] One embodiment of the etching solution composition includes nitric acid, alkyl sulfonic acid, organic acid, sulfate, metal salt, nitrate and water.

[0052] In one embodiment of the etching solution composition, nitric acid is used as an oxidant to oxidize the silver-containing metal film and conductive film. The nitric acid content can be 8% to 15% by weight, based on the total weight of the etching solution composition. If the nitric acid content is less than 8% by weight, the etching rate of the silver-containing metal film and conductive film decreases, potentially reducing etching uniformity. Alternatively, if the nitric acid content exceeds 15% by weight, the etching rate of the conductive film accelerates, resulting in undercutting of the conductive film located above and / or below the silver-containing metal film, which may cause problems in subsequent processes. When the nitric acid content meets the aforementioned range, the etching rate is easily controlled, and the silver-containing metal film and conductive film can be etched uniformly.

[0053] One embodiment of the etching solution composition includes an alkyl sulfonic acid. The alkyl sulfonic acid can be used to etch silver-containing metal films and conductive films oxidized with nitric acid. The sulfonic acid compound can slow down the decomposition rate of nitric acid, thereby maintaining a constant etching rate.

[0054] One embodiment of the etching solution composition may contain alkyl sulfonic acid at a concentration of 3% to 8% by weight, based on the total weight of the etching solution composition. When the alkyl sulfonic acid content is less than 3% by weight, the inhibitory effect against nitric acid decomposition is reduced, potentially decreasing stability and possibly generating silver residue. Furthermore, when the alkyl sulfonic acid content exceeds 8% by weight, the silver etching rate becomes too fast, potentially creating tips in the conductive film above and / or below the silver, or causing wiring defects due to silver overetching. When the alkyl sulfonic acid content meets the aforementioned range, the etching rate of both the silver-containing metal film and the conductive film can be easily controlled, and defects arising from silver residue and silver re-adsorption can be prevented.

[0055] Alkyl sulfonic acid can be methanesulfonic acid, ethanesulfonic acid, or propanesulfonic acid, etc. An etching solution composition of one embodiment may contain at least one of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid as an alkyl sulfonic acid. That is, an etching solution composition of one embodiment may contain any one or more of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid as an alkyl sulfonic acid.

[0056] One embodiment of the etching solution composition includes an organic acid. The organic acid, as an etchant for silver films, can etch silver films oxidized by nitric acid.

[0057] The organic acid can be included at a concentration of 25% to 55% by weight, based on the total weight of the etching solution composition. If the organic acid content is less than 25% by weight, uneven etching rates may result in streaks. Furthermore, if the organic acid content exceeds 55% by weight, over-etching may occur. When the organic acid content meets the aforementioned range, the etching rate of the silver film can be easily controlled, and defects arising from silver residue and silver re-adsorption can be prevented.

[0058] The organic acid can be acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, or tartaric acid, etc. One embodiment of the etching solution composition may contain at least one of citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid as an organic acid. That is, one embodiment of the etching solution composition may contain any one or more of citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid as an organic acid.

[0059] One embodiment of the etching solution composition includes a sulfate. The sulfate, as an etchant for conductive films, can be used to etch conductive films. Furthermore, the sulfate can cause an etch stop phenomenon in the silver film. Therefore, even if the etching time is increased in the etching process, an increase in side etch can be prevented. That is, by including a sulfate in the etching solution composition according to an embodiment of the present invention, the occurrence of the etch stop phenomenon can be controlled, thereby controlling the etching rate and adjusting side etch.

[0060] The etching solution composition can contain sulfate at a concentration of 15% to 25% by weight, based on the total weight of the etchant composition. When the sulfate content is less than 15% by weight, the etching rate of the conductive film decreases, potentially resulting in silver film and conductive film residue. Conversely, when the sulfate content exceeds 25% by weight, the etching rate of the conductive film is too fast, potentially inducing erosion defects. When the sulfate content meets the aforementioned range, the etching rate can be easily controlled, i.e., the etching time can be easily controlled in the etching process, the etch stop phenomenon occurs regularly, and the silver film and conductive film are etched uniformly.

[0061] The sulfate can be potassium bisulfate, sodium bisulfate, or ammonium bisulfate, etc. An etching solution composition of one embodiment may contain at least one of potassium bisulfate, sodium bisulfate, and ammonium bisulfate as a sulfate. That is, an etching solution composition of one embodiment may contain any one or more of potassium bisulfate, sodium bisulfate, and ammonium bisulfate as a sulfate.

[0062] One embodiment of the etching solution composition includes a metal salt. The metal salt contained in the etching solution composition of one embodiment acts as an etching rate maintainer for the conductive film, preventing a decrease in the etching rate of the conductive film due to external contaminants that may arise during the etching process, such as organic chelators. The etching equipment used in the etching process may contain contaminants caused by photoresist residues, organic matter within the substrate, or various impurities. Such contaminants may adsorb onto the conductive film and hinder etching. According to the present invention, the etching solution composition according to one embodiment includes a metal salt, which can prevent a decrease in the etching rate of the conductive film due to contaminants.

[0063] The stability constant of the metal salt contained in the etching solution composition of one embodiment relative to the first compound can be 25.3 or higher. The first compound can refer to a contaminant generated within the aforementioned etching equipment, i.e., an organic chelating agent. Specifically, the first compound can be Nylon 6,6, polyvinyl butyral, polyvinyl alcohol, polyacrylamide, or ethylene diamine.

[0064] In one embodiment, the metal salt can react with the first compound to form a bond as shown in reaction formula 1 below.

[0065] [Reaction Formula 1]

[0066]

[0067] In the above reaction formula 1, M can represent the metal ion of the metal salt, K can represent the first compound, and x can represent the number of the first compound that combines with the metal ion of the metal salt.

[0068] In one embodiment, the stability constant (logK) of the metal salt with that of the first compound at room temperature (25°C) is... M The value can be 25.3 or higher. In this specification, the stability constant, as an indicator of the strength of the bonding force between the metal salt and the first compound, can be obtained as the logarithm of the equilibrium constant in the reaction expressed by the above reaction formula 1. For example, the equilibrium constant (K... M It can be obtained through Equation 1 below.

[0069] [Formula 1]

[0070]

[0071] In Equation 1 above, [MK x [] represents the concentration of the complex of the metal salt and the first compound, [M] represents the concentration of the metal salt, [K] represents the concentration of the first compound, and x represents the amount of the first compound that has bound to the metal salt.

[0072] According to one embodiment, the etching solution composition includes a metal salt with a stability constant of 25.3 or higher with the first compound, which can form a complex with at least a portion of the contaminants generated during the etching process. This prevents a decrease in etching performance due to contaminants, thereby improving process reliability. Specifically, in the case of a metal salt with a stability constant of 25.3 or higher with the first compound, the binding force with the first compound, which is a contaminant, is relatively strong, thus preventing the first compound from binding to the conductive film and effectively preventing a decrease in etching rate.

[0073] The stability constant of the metal salt contained in the etching solution composition of one embodiment relative to the first compound can be 25.3 or higher. If the stability constant of the metal salt relative to the first compound is less than 25.3, the bonding force with the first compound is insufficient, and therefore the amount of the first compound reacting with the conductive film during the etching process may not be sufficiently reduced. Since the stability constant of the metal salt relative to the first compound meets the aforementioned range, it is more effective to prevent the conductive film from reacting with contaminants and hindering the etching rate. That is, since the stability constant of the metal salt relative to the first compound is 25.3 or higher, it can bond with contaminants before the conductive film, thereby effectively preventing a decrease in the etching rate of the conductive film due to contaminants.

[0074] The metal salt can be included at a concentration of 0.01% to 1.0% by weight, based on the total weight of the etching solution composition. If the metal salt content is less than 0.01% by weight, the adhesion of contaminants within the etching equipment to the conductive film cannot be suppressed, potentially leading to a decrease in etching performance. Furthermore, if the metal salt content exceeds 1.0% by weight, the metal salt may adsorb onto the metal film, potentially causing a decrease in the etching performance of the etching solution composition.

[0075] In one embodiment, the metal salt may be a metal salt of zirconium, niobium, cobalt, hafnium, bismuth, palladium, or uranium. The etching solution composition of one embodiment may contain at least one metal salt selected from zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium as a metal salt. For example, the etching solution composition of one embodiment may contain any one or a mixture of two or more metal salts selected from zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium as a metal salt.

[0076] One embodiment of the etching solution composition includes a nitrate. The nitrate contained in the etching solution composition of one embodiment acts as a silver residue remover, and can be used to remove silver residue. The nitrate contained in the etching solution composition of one embodiment has a higher oxidation potential compared to other salts such as sulfates, thus being more conducive to the oxidation of metals including silver. Therefore, by including a nitrate in the etching solution composition of one embodiment of the present invention, the etching rate can be controlled, thereby adjusting unilateral etching and removing silver residue.

[0077] The etchant composition may contain nitrates at a concentration of 0.5% to 7% by weight, based on the total weight of the etchant composition. For example, one embodiment of the etchant composition may contain nitrates at a concentration of 1% to 5% by weight, based on the total weight of the etchant composition. When the nitrate content is less than 0.5% by weight, defects may occur due to a decrease in etching rate and the formation of silver residue. Alternatively, when the nitrate content exceeds 7% by weight, the etching rate of the silver film may be too fast, potentially resulting in sharp points on the conductive film disposed above and / or below the silver film, or defects due to over-etching of the silver. When the nitrate content meets the aforementioned range, the etching rate can be easily controlled, i.e., the etching time can be easily controlled in the etching process, and the silver film can be etched uniformly.

[0078] The nitrate can be sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, or aluminum nitrate, etc. One embodiment of the etching solution composition may contain at least one of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate as a nitrate. That is, one embodiment of the etching solution composition may contain any one or more of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate as a nitrate.

[0079] On the other hand, one embodiment of the etching solution composition includes water. Water can be included in the etching solution composition such that the sum of the compounds constituting the above-described etching solution composition and water is 100% by weight. That is, water accounts for the remaining portion of the total etching solution other than the weight percentage of the other remaining components besides water. Semiconductor-grade water or ultrapure water can be used as the water used in the etching solution composition of one embodiment.

[0080] Hereinafter, a method for manufacturing a metal pattern and a method for manufacturing a display device according to an embodiment of the present invention will be described.

[0081] Figures 1a to 1e This is a diagram illustrating the steps of a method for manufacturing a metal pattern using an etchant composition of one embodiment. Figures 1a to 1e The figures sequentially illustrate a method for forming a metal pattern using the etching solution composition of one embodiment described above. Figures 1a to 1e A cross section is briefly shown in a plane parallel to the plane defined by the third direction DR3, which is the thickness direction, and the first direction DR1, which is orthogonal to it.

[0082] One embodiment of the method for manufacturing a metal pattern may include: forming a metal layer containing silver on a substrate; forming a photoresist pattern on the metal layer; patterning the metal layer with an etching solution composition using the photoresist pattern as a mask; and removing the photoresist pattern.

[0083] Figures 1a to 1c This can represent the step of forming a photoresist pattern on a metal layer in a method for manufacturing a metal pattern according to one embodiment. The step of forming a photoresist pattern on a metal layer may include: forming a silver-containing metal layer on a substrate, and forming a photoresist pattern on the metal layer.

[0084] Figure 1a This can represent the steps of forming a silver-containing metal layer CL on a substrate PSB. The steps of forming the metal layer CL may include: forming a first conductive film CL1 on the substrate PSB; forming a metal film CL2 on the first conductive film CL1; and forming a second conductive film CL3 on the metal film CL2. The metal film CL2 may be a silver-containing metal film. The first conductive film CL1 and the second conductive film CL3 may each be independently transparent or semi-transparent electrodes. The transparent or semi-transparent electrodes may contain at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). In one embodiment, the first conductive film CL1 and the second conductive film CL3 may each independently contain indium tin oxide (ITO) as a transparent or semi-transparent conductive film, and the metal film CL2 may contain silver (Ag). Therefore, the metal layer CL can be configured as an indium tin oxide (ITO) / silver (Ag) / indium tin oxide (ITO) stacked structure.

[0085] On the other hand, Figure 1a In the diagram, the metal layer CL represents a three-layer film consisting of a first conductive film CL1, a metal film CL2, and a second conductive film CL3 stacked sequentially; however, the embodiment is not limited to this. The metal layer CL can also be a single-layer film composed of silver or an alloy containing silver, or a double-layer film consisting of a silver-containing metal film and alternating transparent or semi-transparent electrodes, or a multilayer film consisting of four or more layers.

[0086] On the other hand, the substrate PSB can be an insulating substrate. However, unlike this, in one embodiment, the substrate PSB can be a thin-film transistor substrate in the manufacturing process. For example, the substrate PSB can be an unfinished thin-film transistor substrate, or a thin-film transistor substrate formed as an intermediate step in forming a portion of the circuit layer on the base substrate. Specifically, the substrate PSB can refer to a portion of the substrates in a display device according to a later embodiment; for example, the substrate PSB can refer to the base substrate.

[0087] like Figure 1a As shown, after forming a metal layer CL on the substrate PSB, as Figure 1b As shown, after the entire surface of the metal layer CL formed on the substrate PSB is provided with a photoresist film PR, the photoresist film PR is patterned using a mask MSK.

[0088] The mask MSK can be composed of a first portion M1 that blocks all the incident light and a second portion M2 that transmits only a portion of the light and blocks a portion of it. The substrate PSB and the metal layer CL can be divided into a first region R1 and a second region R2 corresponding to the first portion M1 and the second portion M2.

[0089] Next, if the photoresist film PR, which is only exposed to a portion of the light through the mask MSK, is developed, then as follows: Figure 1c As shown, a photoresist pattern PRP of predetermined thickness is retained in a first region R1, which is shielded from light by the mask MSK and therefore does not provide light. In a second region R2, where light is provided in the second portion M2 of the mask MSK, the photoresist film PR is completely removed, exposing the surface of the substrate PSB. On the other hand, in response to... Figure 1b as well as Figure 1c The description uses a positive photosensitive liquid to remove the exposed portions of the photoresist film PR as an example, but the embodiments are not limited to this. In one embodiment, a negative photosensitive liquid that removes the unexposed portions of the photosensitive film may also be used.

[0090] Next, the first conductive film CL1, the metal film CL2, and the second conductive film CL3 can be patterned using a photoresist patterned PRP. The photoresist patterned PRP can be used as a mask layer for patterning the metal layer CL. That is, as shown... Figure 1c As shown, an etchant composition (not shown) can be provided on a metal layer CL with a photoresist patterned PRP, and the metal layer CL without a photoresist patterned PRP can be etched using the provided etchant composition, thereby achieving the desired effect. Figure 1dThe metal pattern ML is formed as shown. The metal pattern ML may include a first conductive pattern ML1, a second conductive pattern ML2, and a third conductive pattern ML3. In one embodiment, the first conductive pattern ML1 and the third conductive pattern ML3 may be independently transparent or semi-transparent electrodes, and the second conductive pattern ML2 may be a metal layer containing silver.

[0091] One embodiment of the etching solution composition may be a substance that etches the first conductive film CL1, the metal film CL2, and the second conductive film CL3 together to form a metal pattern ML. The etching solution composition provided in the metal pattern manufacturing method of one embodiment is the etching solution composition described above according to an embodiment of the present invention.

[0092] Reference Figure 1d as well as Figure 1e The photoresist pattern PRP and the metal pattern ML can have a trapezoidal shape on the cross section defined by the first direction DR1 and the third direction DR3. However, the embodiments are not limited to this.

[0093] On the other hand, the maximum width W2 of the metal pattern ML on the cross-section can be smaller than the maximum width W1 of the photoresist pattern PRP. Furthermore, in the etching process utilizing the photoresist pattern PRP, the difference (W1-W2) between the maximum width W1 of the photoresist pattern PRP and the maximum width W2 of the metal pattern ML is defined as the CD skew (Critical Dimension Skew). Figure 1d In the diagram, "CD1" or "CD2" respectively correspond to unilateral CD skewness.

[0094] After forming a metal pattern ML using a photoresist pattern PRP, the photoresist pattern PRP can be removed. Figure 1e The final metal pattern ML is shown after the photoresist pattern PRP has been removed. The metal pattern ML can be a multilayer metal pattern consisting of transparent or translucent electrodes stacked with a silver metal pattern.

[0095] In a method for manufacturing a metal pattern according to an embodiment of the present invention, a metal pattern containing silver can be manufactured. More specifically, in a method for manufacturing a metal pattern according to an embodiment of the present invention, a three-layer metal pattern of transparent or semi-transparent electrode / silver metal pattern / transparent or semi-transparent electrode can be manufactured. (The last sentence appears to be incomplete and possibly refers to a separate topic.) Figures 1a to 1e The description discloses a method for forming a multilayer metal pattern, but the embodiments are not limited thereto. A metal pattern formed in a single layer containing silver can also be manufactured in substantially the same way.

[0096] Hereinafter, a method for manufacturing a display device according to an embodiment of the present invention will be described.

[0097] Figure 2 This is a perspective view of a display device DD according to an embodiment of the present invention. Figure 3 This is a cross-sectional view of a display device DD according to an embodiment of the present invention.

[0098] like Figure 2 As shown, the display device DD can display the image IM through the display surface DD-IS. The display surface DD-IS is parallel to the surface defined by the first direction DR1 and the second direction DR2. The normal direction of the display surface DD-IS, i.e., the thickness direction of the display device DD, points to the third direction DR3.

[0099] The front (or top) and back (or bottom) of each component or unit described below are divided by a third direction DR3. However, the first to third directions DR1 to DR3 shown in this embodiment are merely examples. Hereinafter, the first to third directions are defined as the directions indicated by each of the first to third directions DR1 to DR3, and refer to the same reference numerals.

[0100] One embodiment of the present invention illustrates a display device DD having a planar display surface, but it is not limited thereto. The display device DD may also include a curved display surface. The display device DD may also include a three-dimensional display surface. The three-dimensional display surface may also include multiple display areas indicating different directions from each other, for example, including a polygonal cylindrical display surface.

[0101] The display device DD according to this embodiment can be a rigid display device. However, it is not limited thereto; the display device DD according to the present invention can be a flexible display device. A flexible display device may include a foldable display device that can be folded or a curved display device in which a portion of the area is bent.

[0102] This embodiment exemplarily illustrates a display device DD applicable to a mobile phone terminal. Although not shown, a mobile phone terminal can be constructed by configuring the display device DD together with an electronic module, camera module, power module, etc., mounted on a motherboard and mounted on a bracket / housing, etc. The display device DD according to the present invention is applicable to large electronic devices such as televisions and monitors, and also to small and medium-sized electronic devices such as tablet computers, car navigation systems, game consoles, and smartwatches.

[0103] like Figure 2 As shown, the display surface DD-IS includes an image area DD-DA that displays the image IM and a border area DD-NDA adjacent to the image area DD-DA. The border area DD-NDA is an area where no image is displayed. Figure 2 The image IM example shows a clock window and an icon image.

[0104] like Figure 2As shown, the image region DD-DA can be a substantially quadrilateral shape. "Substantially quadrilateral shape" includes not only quadrilateral shapes in the mathematical sense, but also quadrilateral shapes that do not define vertices but define the boundaries of curves in the vertex region (or corner region).

[0105] The border area DD-NDA may surround the image area DD-DA. However, it is not limited to this; the image area DD-DA and the border area DD-NDA may be designed with different shapes. The border area DD-NDA may also be configured only on one side of the image area DD-DA. Depending on the combination of the display device DD with other components of the electronic device, the border area DD-NDA may not be exposed to the outside.

[0106] Figure 3 The cross-section defined by the second direction DR2 and the third direction DR3 is shown. Figure 3 In this diagram, the components of the display device DD are simply shown to illustrate their stacking relationship.

[0107] A display device DD according to an embodiment of the present invention may include a display panel DP, an input sensor ISL, an anti-reflector RPP, and a window WP. At least one of the components of the display panel DP, the input sensor ISL, the anti-reflector RPP, and the window WP may be formed by a continuous process, or at least a portion of the components may be bonded together by an adhesive component. The adhesive component ADS may be a transparent adhesive component such as a pressure-sensitive adhesive film (PSA), an optically clear adhesive film (OCA), or an optically clear resin (OCR). The adhesive components described below may include conventional adhesives or adhesives. In one embodiment of the present invention, the anti-reflector RPP and the window WP may be replaced by other components or omitted.

[0108] exist Figure 3 In this embodiment, the input sensor ISL, the anti-reflective component RPP, and the input sensor ISL in the window WP, which is formed in a continuous process with the display panel DP, are directly disposed on the display panel DP. In this specification, "component B is directly disposed on component A" means that no separate adhesive layer / adhesive component is disposed between component A and component B. Component B is formed on the substrate surface provided by component A after component A is formed, using a continuous process.

[0109] In this embodiment, the anti-reflector RPP and the window WP are of the "panel" type, and the input sensor ISL is of the "layer" type. The "panel" type may include a base layer providing a substrate surface, such as a synthetic resin film, a composite material film, a glass substrate, etc., while the "layer" type omits the base layer. In other words, the "layer" type component is disposed on the substrate surface provided by other components. In one embodiment of the invention, the anti-reflector RPP and the window WP may also be of the "layer" type.

[0110] The display panel DP generates an image, and the input sensor ISL obtains coordinate information of external input (e.g., a touch event). Although not shown separately, the display device DD according to an embodiment of the present invention may also include a protective member disposed below the display panel DP. The protective member and the display panel DP may be bonded together by an adhesive member.

[0111] The display panel DP according to an embodiment of the present invention can be a light-emitting display panel, and is not particularly limited. For example, the display panel DP can be an organic light-emitting display panel or a quantum dot light-emitting display panel. The panel is distinguished according to the constituent material of the light-emitting element. The light-emitting layer of an organic light-emitting display panel may contain organic light-emitting material. The light-emitting layer of a quantum dot light-emitting display panel may contain quantum dots and / or quantum rods. Hereinafter, the display panel DP will be described using an organic light-emitting display panel.

[0112] The anti-reflective component RPP reduces the reflectivity of external light incident from the upper side of the window WP. According to an embodiment of the invention, the anti-reflective component RPP may include a phase retarder and a polarizer. The phase retarder may be a film type or a liquid crystal coating type, and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. For example, the film type may include a stretched synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a predetermined pattern. The phase retarder and polarizer may also include a protective film. The phase retarder and polarizer themselves, or the protective film, may define the base layer of the anti-reflective component RPP.

[0113] An anti-reflective component RPP according to an embodiment of the present invention may include color filters. The color filters have a predetermined arrangement. The arrangement of the color filters can be determined by taking into account the emission colors of the pixels included in the display panel DP. The anti-reflective component RPP may also include a black matrix adjacent to the color filters.

[0114] An anti-reflective component RPP according to an embodiment of the present invention may include a destructive interference structure. For example, the destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers from each other. The first reflected light and the second reflected light reflected from the first reflective layer and the second reflective layer, respectively, can destructively interfere, thereby reducing the external light reflectivity.

[0115] According to an embodiment of the present invention, the window WP includes a base layer WP-BS and a light-shielding pattern WP-BZ. The base layer WP-BS may include a glass substrate and / or a synthetic resin film. The base layer WP-BS is not limited to a single layer. The base layer WP-BS may include two or more films bonded together by adhesive components.

[0116] The light-shielding pattern WP-BZ partially overlaps with the substrate layer WP-BS. Alternatively, the light-shielding pattern WP-BZ may be disposed on the back side of the substrate layer WP-BS, and the light-shielding pattern WP-BZ substantially defines the bezel area DD-NDA of the display device DD. The area without the light-shielding pattern WP-BZ may define the image area DD-DA of the display device DD. If defined by a window WP, the area with the light-shielding pattern WP-BZ is defined as the light-shielding area of ​​the window WP, and the area without the light-shielding pattern WP-BZ is defined as the transmissive area of ​​the window WP.

[0117] The light-shielding pattern WP-BZ can have a multi-layered structure. This multi-layered structure can include a colored layer and a non-colored (especially black) light-shielding layer. The colored layer and the non-colored light-shielding layer can be formed by vapor deposition, printing, or coating processes. Although not shown separately, the window WP can also include a functional coating disposed on the entire surface of the base layer WP-BS. This functional coating can include an anti-fingerprint layer, an anti-reflective layer, and a hard coating, etc.

[0118] Figure 4 This is a cross-sectional view of a display panel DP according to an embodiment of the present invention.

[0119] like Figure 4 As shown, the display panel DP includes a substrate layer BL, a circuit element layer DP-CL disposed on the substrate layer BL, a display element layer DP-OLED, and an upper insulating layer TFL. The display panel DP can define a display area DP-DA and a non-display area DP-NDA, respectively corresponding to the image area DD-DA and the border area DD-NDA shown in FIG. 1. The non-display area DP-NDA can define a pad area NDA-PA, which is described later, and has pad electrodes. In this specification, "area / part corresponding to area / part" means "overlapping with each other," and is not limited to having the same area and / or the same shape.

[0120] The substrate layer BL may include at least one synthetic resin film. The substrate layer BL may include a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, etc.

[0121] The circuit element layer DP-CL includes at least one insulating layer and circuit elements. The insulating layer includes at least one inorganic layer and at least one organic layer. The circuit elements include signal lines and pixel driving circuits, etc.

[0122] The display element layer of a DP-OLED includes at least organic light-emitting diodes as light-emitting elements. The display element layer of a DP-OLED may also include an organic layer such as a pixel-defining film.

[0123] The upper insulating layer TFL comprises multiple thin films. Some films are configured to improve optical efficiency, while others are configured to protect the organic light-emitting diode.

[0124] Figure 5a This is a plan view of a display panel DP according to an embodiment of the present invention. Figure 5b This is a cross-sectional view of a display panel DP according to an embodiment of the present invention.

[0125] like Figure 5a As shown, the display panel DP includes a display area DP-DA and a non-display area DP-NDA on a plane. In this embodiment, the non-display area DP-NDA can be defined along the edge of the display area DP-DA.

[0126] The display panel DP may include a driving circuit GDC, multiple signal lines SGL (hereinafter signal lines), multiple signal pads DP-PD (hereinafter signal pads), and multiple pixels PX (hereinafter pixels). Pixels PX are configured in the display area DP-DA. Each pixel PX includes an organic light-emitting diode and a pixel driving circuit connected thereto. The driving circuit GDC, signal lines SGL, signal pads DP-PD, and pixel driving circuit may be included in... Figure 4 The circuit element layer DP-CL is shown.

[0127] The driving circuit GDC may include a scan driving circuit. The scan driving circuit generates multiple scan signals (hereinafter, scan signals) and outputs the scan signals sequentially to multiple scan lines GL (hereinafter, scan lines), as described later. The scan driving circuit may also output another control signal to the pixel driving circuit of pixel PX.

[0128] The scan driving circuit may include multiple thin-film transistors formed using the same process as the pixel driving circuit of the pixel PX, such as LTPS (Low Temperature Polycrystalline Silicon) or LTPO (Low Temperature Polycrystalline Oxide) processes.

[0129] The signal line SGL includes scan lines GL, data lines DL, power lines PL, and control signal lines CSL. Scan lines GL are connected to corresponding pixels PX, and data lines DL are connected to corresponding pixels PX. Power lines PL are connected to pixels PX. Control signal lines CSL provide control signals to the scan drive circuit.

[0130] The signal line SGL overlaps the display area DP-DA and the non-display area DP-NDA. The signal line SGL may include a pad portion and a line portion. The line portion overlaps the display area DP-DA and the non-display area DP-NDA. The pad portion is connected to the end of the line portion. The pad portion is disposed in the non-display area DP-NDA and overlaps with the corresponding signal pad in the signal pad DP-PD. A detailed explanation of this will follow. The area in the non-display area DP-NDA where the signal pad DP-PD is disposed can be defined as the pad area NDA-PA.

[0131] The line portion connected to pixel PX essentially constitutes most of the signal line SGL. The line portion is connected to thin-film transistors T1 and T2 of pixel PX (see reference). Figure 5b The wire portion can have a single-layer / multi-layer structure, and can be a single-body shape or comprise two or more parts. The two or more parts can be disposed on different layers and connected to each other through contact holes in the insulating layer disposed between the two or more parts.

[0132] Figure 5b It is to intercept Figure 5a Cross-sectional view of sections I to I'. Figure 5b This shows a cross-sectional view of the display area DP-DA of the display panel DP. (Refer to...) Figure 5bThe display panel DP may include a first buffer layer BFL1, a second buffer layer BFL2, a first gate insulating layer GI1, a second gate insulating layer GI2, a first insulating layer ILD, a second insulating layer VIA1, a third insulating layer VIA2, a semiconductor pattern ACP including multiple patterns, a first conductive layer GMP1 including multiple patterns, a second conductive layer GMP2 including multiple patterns, a third conductive layer DMP1 including multiple patterns, and a fourth conductive layer DMP2 including multiple patterns. Here, the first conductive layer GMP1 may include a first gate metal pattern, the second conductive layer GMP2 may include a second gate metal pattern, the third conductive layer DMP1 may include a first data metal pattern, and the fourth conductive layer DMP2 may include a second data metal pattern.

[0133] In one embodiment of the present invention, the first gate insulating layer GI1, the second gate insulating layer GI2, and the first insulating layer ILD each comprise an organic film and / or an inorganic film. In another embodiment of the present invention, the first gate insulating layer GI1, the second gate insulating layer GI2, and the first insulating layer ILD each may comprise a plurality of inorganic thin films. The plurality of inorganic thin films may comprise a silicon nitride layer and a silicon oxide layer.

[0134] In one embodiment of the present invention, the second insulating layer VIA1 and the third insulating layer VIA2 may each contain organic and / or inorganic substances. In one embodiment of the present invention, the first conductive layer GMP1 and the second conductive layer GMP2 may each contain molybdenum (Mo), but are not limited thereto.

[0135] In one embodiment of the present invention, the third conductive layer DMP1 and the fourth conductive layer DMP2 may each contain at least one of aluminum (Al) and titanium (Ti), but are not limited thereto. In one embodiment of the present invention, the third conductive layer DMP1 and the fourth conductive layer DMP2 may each have a structure in which titanium, aluminum, and titanium are stacked sequentially.

[0136] A first buffer layer BFL1 can be disposed on the base layer BL. A second buffer layer BFL2 can be disposed on the first buffer layer BFL1. Both the first buffer layer BFL1 and the second buffer layer BFL2 can prevent impurities present in the base layer BL from flowing into the pixel PX (see reference). Figure 5a In particular, it can prevent impurities from diffusing into the constituent pixels PX (see reference). Figure 5a The semiconductor pattern ACP of thin-film transistors T1 and T2.

[0137] Impurities can flow in from the outside or be generated through the thermal decomposition of the substrate layer BL. Impurities can be gases or sodium expelled from the substrate layer BL. Additionally, the first buffer layer BFL1 and the second buffer layer BFL2 each block impurities from the outside into the pixel PX (see reference). Figure 5a(Water flowing in.) In another embodiment of the invention, at least one of the first buffer layer BFL1 and the second buffer layer BFL2 may be omitted.

[0138] A semiconductor pattern ACP can be configured on the second buffer layer BFL2. The semiconductor pattern ACP can form thin-film transistors T1 and T2 respectively. The semiconductor pattern ACP can contain polycrystalline silicon, amorphous silicon, or metal-oxide-semiconductor. Figure 5b The diagram shows the semiconductor pattern ACP constituting the source S1, active region A1, and drain D1 of the first thin-film transistor T1, and the semiconductor pattern ACP constituting the source S2, active region A2, and drain D2 of the second thin-film transistor T2.

[0139] A first gate insulating layer GI1 may be disposed on a second buffer layer BFL2 and cover a semiconductor pattern ACP. A first conductive layer GMP1 may be disposed on the first gate insulating layer GI1. The gate G1 of the first thin-film transistor T1 and the gate G2 of the second thin-film transistor T2 are shown on the first conductive layer GMP1. Although not shown separately, in one embodiment of the invention, the first conductive layer GMP1 may include components constituting a pixel PX (see reference). Figure 5a ( ) is either of the two electrodes of a capacitor.

[0140] A second gate insulating layer GI2 may be disposed on the first gate insulating layer GI1 and cover the first conductive layer GMP1. A second conductive layer GMP2 may be disposed on the second gate insulating layer GI2. In one embodiment of the present invention, the second conductive layer GMP2 may include components constituting a pixel PX (see reference). Figure 5a The upper electrode UE is the other of the two electrodes of the capacitor. The upper electrode UE is shown as the second conductive layer GMP2. An opening UE-OP may be defined on the upper electrode UE.

[0141] The first insulating layer ILD can be disposed on the second gate insulating layer GI2 and cover the second conductive layer GMP2. The third conductive layer DMP1 can be disposed on the first insulating layer ILD. Two first connection electrodes CNE-D1 are exemplarily shown on the third conductive layer DMP1. The two first connection electrodes CNE-D1 can be connected to the gate G1 of the first thin film transistor T1 and the source S2 of the second thin film transistor T2 through contact holes CH-10 penetrating the first insulating layer ILD and the second gate insulating layer GI2, and contact holes CH20 penetrating the first insulating layer ILD, the second gate insulating layer GI2 and the first gate insulating layer GI1, respectively.

[0142] The second insulating layer VIA1 can be disposed on the first insulating layer ILD and cover the third conductive layer DMP1. The fourth conductive layer DMP2 can be disposed on the second insulating layer VIA1. A second connection electrode CNE-D2 is exemplarily shown on the fourth conductive layer DMP2. Multiple second connection electrodes CNE-D2 can be provided. The second connection electrodes CNE-D2 can be connected to the corresponding first connection electrode CNE-D1 through contact holes CH22 penetrating the second insulating layer VIA1. The first and second connection electrodes CNE-D1 and CNE-D2 can be disposed on the first insulating layer ILD. Specifically, the first connection electrode CNE-D1 can be disposed on the first insulating layer ILD, and the second connection electrode CNE-D2 can be disposed on the second insulating layer VIA1.

[0143] Reference Figure 5b In the display area DP-DA, the third insulating layer VIA2 can be disposed on the second insulating layer VIA1 and cover the fourth conductive layer DMP2. On the other hand, in this specification, the third insulating layer VIA2 may be referred to as a planarization layer in the later description of the manufacturing method of the display device.

[0144] The light-emitting element layer ELL may include a light-emitting element LD and a pixel defining film PDL. The light-emitting element LD may include a pixel electrode AE, a light-emitting layer EML, and a counter electrode CE.

[0145] The pixel electrode AE ​​can be disposed on the third insulating layer VIA2. The pixel electrode AE ​​can be electrically connected to the fourth conductive layer DMP2 through a contact hole. The pixel defining film PDL can be disposed on the third insulating layer VIA2, exposing at least a portion of the pixel electrode AE. The light-emitting layer EML can be disposed on the pixel electrode AE. The counter electrode CE can be disposed on the light-emitting layer EML.

[0146] When the light-emitting element LD is an organic light-emitting diode (OLED), the light-emitting layer EML can contain organic materials. In another embodiment of the invention, when the light-emitting element LD is a micro LED, the light-emitting layer EML can contain inorganic materials. The encapsulation layer ECP can seal the light-emitting element layer ELL, thereby protecting the light-emitting element layer ELL from external oxygen or moisture. The encapsulation layer ECP can be a layer that mixes organic and inorganic films. The encapsulation layer ECP can correspond to... Figure 4 The upper insulating layer TFL.

[0147] Figure 6a This is a plan view showing the pad areas NDA-PA of a display panel DP according to an embodiment of the present invention. Figure 6b This is a cross-sectional view showing the pad area NDA-PA of a display panel DP according to an embodiment of the present invention.

[0148] Figure 6a This is an enlarged view of a portion of the pad area NDA-PA of a display panel DP according to an embodiment of the present invention. Figure 6a Enlarged display Figure 5a The AA region. In one embodiment of the invention, any signal line and its corresponding signal pad are electrically connected via a contact hole that penetrates at least one insulating layer that fully overlaps with the display area DP-DA and the non-display area DP-NDA. The following description, with reference to the accompanying drawings, will be slightly more detailed.

[0149] exist Figure 6a In this embodiment, the data line DL may include a line portion DL-L and a pad portion DL-P. The pad portion DL-P may have a larger area than the line portion DL-L for the same length. The line portion DL-L and the pad portion DL-P may be electrically connected through a contact hole CNT1. Although the pad portion DL-P is shown as having a quadrilateral shape, its shape may be deformed during manufacturing. In one embodiment, the signal pad DP-PD may include a plurality of pad electrodes SD (see reference 1). Figure 6b ).

[0150] Figure 6b It is to intercept Figure 6a Cross-sectional view of sections II to II'. Figure 6b The non-display area DP-NDA of the display panel DP is shown. Specifically, Figure 6b The pad area NDA-PA is shown, defined within the non-display area DP-NDA. The pad area NDA-PA can be equivalent to the area where the pad electrodes SD are configured.

[0151] exist Figure 6b In this design, the pad electrode SD may include a first pad electrode SD1 and a second pad electrode SD2. The pad electrode SD may be disposed on the first insulating layer IDL. The second pad electrode SD2 may be directly disposed on the first pad electrode SD1. The first pad electrode SD1 may be electrically connected to a first gate GA1 or a second gate GA2 disposed on the first gate insulating layer GI1 through a contact hole CH-SD. The pad electrode SD may overlap with the pad region NDA-PA. The second pad electrode SD2 may be configured to be exposed to the outside for subsequent attachment of a COF or COP film in the module process.

[0152] The following is for reference Figure 7 as well as Figures 8a to 8h A method for manufacturing a display device according to an embodiment is described. Figures 8a to 8h This is a diagram that briefly illustrates the steps of a method for manufacturing a display device according to an embodiment of the present invention. Figures 8a to 8h Show interception Figure 5a The cross section and the sectioning of I to I' Figure 6aThe cross-sections of sections III to III'. In the description of the manufacturing method of the display device according to one embodiment, the display device can be described in accordance with the above description of the display device according to one embodiment. Hereinafter, in the description of the manufacturing method of the display device according to one embodiment, the content that is repeated in the above description of the display device according to one embodiment will not be described, and the description will focus on the differences.

[0153] One embodiment of the manufacturing method of the display device can represent manufacturing in Figures 2 to 6b The method of a display device DD according to one embodiment is described herein. One embodiment provides a pixel electrode AE ​​comprising silver. Figure 5b The manufacturing method of the display device.

[0154] Figure 7 This is a flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention.

[0155] Reference Figure 7 One embodiment of the method for manufacturing a display device may include: a step of forming a thin film transistor on a substrate (S100); a step of forming a planarization layer on the thin film transistor (S200); a step of forming an electrode layer on the planarization layer (S300); and a step of etching the electrode layer with an etching solution composition to form a pixel electrode (S400).

[0156] Reference Figure 8a The step of forming thin-film transistors T1 and T2 on a substrate can be performed. In one embodiment, the substrate may be... Figure 8a The substrate layer BL. The display panel DP can include the substrate layer BL, a first buffer layer BFL1, a second buffer layer BFL2, a first gate insulating layer GI1, a second gate insulating layer GI2, and a first insulating layer ILD in the display area DP-DA and the non-display area DP-NDA. The first and second buffer layers BFL1 and BFL2 disposed on the substrate layer BL, the first gate insulating layer GI1 disposed on the first and second buffer layers BFL1 and BFL2, the second gate insulating layer GI2 disposed on the first gate insulating layer GI1, and the first insulating layer ILD disposed on the second gate insulating layer GI2 can be stacked to completely overlap with the display area DP-DA and the non-display area DP-NDA.

[0157] In one embodiment, the gates G1 and G2 of the display area DP-DA and the first gate GA1 of the non-display area DP-NDA can be stacked simultaneously. The first pad electrode SD1 and the first connection electrode CNE-D1 can also be stacked simultaneously. The first connection electrode CNE-D1 and the first pad electrode SD1 can be disposed on the first insulating layer ILD. Alternatively, a second insulating layer VIA1 can be disposed between the first connection electrode CNE-D1 and the second connection electrode CNE-D2, and the first connection electrode CNE-D1 and the second connection electrode CNE-D2 are electrically connected through a contact hole CH22. Figure 8a In the steps shown, the second connection electrode CNE-D2 and the second pad electrode SD2 can be exposed to the outside.

[0158] Reference Figure 8b After forming thin-film transistors T1 and T2 on the substrate, a step of forming a planarization layer VIA2 on the thin-film transistors T1 and T2 can be performed. The planarization layer VIA2 can be formed on the second insulating layer VIA1 of the display area DP-DA. The planarization layer VIA2 may not be formed on the first insulating layer ILD of the non-display area DP-NDA. The planarization layer VIA2 can completely cover the second connection electrode CNE-D2.

[0159] The first pad electrode SD1 and the second pad electrode SD2 can each be provided as a multilayer structure. The first and second pad electrodes SD1 and SD2 may include at least first to third pad metal layers SML1, SML2, and SML3. For example, the first to third pad metal layers SML1, SML2, and SML3 can be provided as a structure of sequentially stacked titanium, aluminum, and titanium layers. The first and second pad electrodes SD1 and SD2 may include at least one aluminum layer.

[0160] Reference Figures 8c to 8f This describes the steps for forming a pixel electrode AE ​​according to an embodiment of the present invention. Figures 8c to 8f In this process, an electrode layer DL for forming pixel electrodes AE can be formed on the planarization layer VIA2.

[0161] Figure 8cThis can represent the step of forming a silver-containing electrode layer DL on a planarization layer VIA2. The step of forming the electrode layer DL may include: forming a first conductive film DL1 on the planarization layer VIA2; forming a metal film DL2 on the first conductive film DL1; and forming a second conductive film DL3 on the metal film DL2. The metal film DL2 may be a silver-containing metal film. The first conductive film DL1 and the second conductive film DL3 may each be independently a transparent or semi-transparent electrode. The transparent or semi-transparent electrode may contain at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). In one embodiment, the first conductive film DL1 and the second conductive film DL3 may each independently contain indium tin oxide (ITO) as a transparent or semi-transparent conductive film, and the metal film DL2 may contain silver (Ag). Thus, the electrode layer DL can be configured as an indium tin oxide (ITO) / silver (Ag) / indium tin oxide (ITO) stacked structure.

[0162] On the other hand, Figure 8c In the diagram, the electrode layer DL shows a three-layer film consisting of a first conductive film DL1, a metal film DL2, and a second conductive film DL3 stacked sequentially; however, the embodiment is not limited to this. The electrode layer DL can also be a single-layer film made of silver or an alloy containing silver, or a double-layer film consisting of a metal film containing silver and alternating transparent or semi-transparent electrodes, or a multilayer film with four or more layers.

[0163] Reference Figures 8d to 8f After the step of forming the electrode layer DL on the planarization layer VIA2, the step of etching the electrode layer DL with an etchant composition according to an embodiment to form the pixel electrode AE ​​can be performed. (See also...) Figure 8d as well as Figure 8e During the patterning process of etching the electrode layer DL, the pad electrodes SD can be exposed to the outside. For example... Figure 8d as well as Figure 8e As shown, the second pad electrode SD2 in the pad electrode SD can be exposed to the outside.

[0164] The electrode layer DL may include a pixel electrode portion P-AEP and a peripheral portion SR. In the step of etching the electrode layer DL to form a pixel electrode AE ​​using an etchant composition of one embodiment, a photoresist pattern PRP may be patterned on the electrode layer DL, and then the electrode layer DL may be etched using the etchant composition of the aforementioned embodiment to form the pixel electrode AE.

[0165] When the electrode layer DL contains silver and the second pad electrode SD2 contains aluminum (Al), silver particles may precipitate during the etching process of the electrode layer DL. Specifically, the silver-containing electrode layer DL is etched by the etching solution to become silver ions (Ag). + ), silver ions (Ag) + During the etching of the electrode layer DL, aluminum (Al) contained in the second pad electrode SD2 exposed to the outside is reduced and silver particles are precipitated. After the precipitated silver particles adhere to the sides and top of the second pad electrode SD2, they are separated from the second pad electrode SD2 by sprayed cleaning solution during subsequent cleaning processes and transferred to the pixel electrode AE. Thus, the silver particles transferred to the pixel electrode AE ​​may cause issues with the pixel PX (refer to...). Figure 5a Problems such as dark spot defects or pad contact defects.

[0166] Here, in an etchant composition according to an embodiment of the present invention, as a non-phosphoric acid etchant composition, by using an etchant composition comprising 8% to 15% nitric acid, 3% to 8% alkyl sulfonic acid, 25% to 55% organic acid, 15% to 25% sulfate, 0.01% to 1.0% metal salt, 0.5% to 7% nitrate, and the balance water, there is less damage to aluminum (Al), thereby preventing the precipitation of silver (Ag) even when the pad electrode SD is exposed to the outside during the etching of the electrode layer DL.

[0167] Refer again Figures 8d to 8fThe step of forming the pixel electrode AE ​​includes forming a photoresist pattern PRP on the electrode layer DL. The step of forming the photoresist pattern PRP can involve forming a photoresist layer (not shown) that completely covers the pixel electrode portion P-AEP and the peripheral portion SR of the electrode layer DL, and then removing the portion overlapping with the peripheral portion SR from the photoresist layer (not shown) through exposure and development, thereby leaving only the photoresist pattern PRP on the pixel electrode portion P-AEP. The photoresist pattern PRP can expose the entire peripheral portion SR except for the pixel electrode portion P-AEP. If an etching step is performed to remove the exposed peripheral portion SR of the electrode layer DL, only the pixel electrode portion P-AEP and the photoresist pattern PRP disposed on the pixel electrode portion P-AEP are retained. Figure 8f In this process, if the photoresist pattern PRP is removed to expose the pixel electrode portion P-AEP, a pixel electrode AE ​​can be formed. The pixel electrode AE ​​may include a first electrode film MTL1, a second electrode film MTL2, and a third electrode film MTL3. The second electrode film MTL2 may be a metal film containing silver. The first electrode film MTL1 and the third electrode film MTL3 may each be independently transparent or semi-transparent electrodes.

[0168] Reference Figure 8g A pixel defining film (PDL) can be formed on the pixel electrode AE, the PDL defining an opening that exposes at least a portion of the pixel electrode AE. The PDL is configured for pixel deposition.

[0169] Reference Figure 8h A light-emitting element (LD) overlapping the display area DP-DA can be formed on the pixel defining film (PDL). In one embodiment, the light-emitting element (LD) may include a pixel electrode (AE), a light-emitting layer (EML), and a counter electrode (CE).

[0170] Hereinafter, the etching solution composition according to the present invention will be specifically described together with examples and comparative examples. However, the etching solution composition and the metal pattern formed therefrom described in the examples are examples and do not limit the scope of the embodiments.

[0171] (Preparation of the etching solution composition)

[0172] The etching solution compositions of Examples 1 to 3 according to the present invention and the etching solution compositions of Comparative Examples 1 to 7 were prepared according to the configurations shown in Table 1 below. In Table 1, the units indicating the content of each component are expressed as % by weight when the total weight of the etching solution composition is 100%. In Table 1, when the total weight of the etching solution composition is taken as 100%, the remaining amount is equivalent to water.

[0173] Table 1

[0174]

[0175]

[0176] (Metal pattern manufacturing and evaluation)

[0177] Etching tests were performed on a silver-containing metal film using the etching solution compositions shown in Table 1. The etching tests involved forming a three-layer metal film—a lower ITO film, an Ag film, and an upper ITO film—on a substrate, and then fabricating a sample with a photoresist pattern formed on the upper ITO film.

[0178] In Table 2 below, "new etching solution" indicates the state immediately after preparation, while "old etching solution" indicates the state assuming an etching process has been performed over a long period of time, with 1000 ppm of Ag powder completely dissolved in the etching solution.

[0179] 1. Side Etch Review

[0180] In the test pieces, three metal films exposed by a photoresist pattern were etched. The etching solution compositions of Examples 1-3 and Comparative Examples 1-7 were placed in a jet etching experimental apparatus (model name: ETCHER (TFT), SEMES Corporation). The temperature was set to 40°C and raised. When the temperature reached 40 ± 0.1°C, the etching process of the test pieces was performed. At this time, based on the time point at which the etching of the three metal films ended, additional etching of 50% (O / E 50%) and additional etching of 100% (O / E 100%) were performed. The distance from the end of the photoresist pattern to the etched Ag film (Side Etch) was measured using a scanning electron microscope (SEM), and the results are shown in Table 2 below. Here, 50% additional etching (O / E 50%) means etching for 50% of the total etching time of the three metal layers, and 100% additional etching (O / E 100%) means etching for 100% of the total etching time of the three metal layers. The preferred side etch range is below 0.3 μm; when it exceeds 0.3 μm, it is considered non-specification (Spec.out).

[0181] 2. Evaluation of Ag and ITO residues

[0182] The etching solutions of Examples 1-3 and Comparative Examples 1-7 were placed in the jet etching experimental equipment (model name: ETCHER (TFT), SEMES Corporation), and the temperature was set to 40°C and raised. Then, when the temperature reached 40 ± 0.1°C, the etching process of the test pieces was performed. The total etching time was 85 seconds. The test pieces were placed in the equipment, and jet etching began. After the 85-second etching time was completed, the test pieces were removed, washed with deionized water, dried using a hot air drying device, and the photoresist pattern was removed using a photoresist stripper. After cleaning and drying, the residue, which was a phenomenon where Ag and ITO were not etched and remained in the areas not covered with photoresist, was measured using scanning electron microscopy (SEM). The residue was evaluated according to the following criteria, and the results are shown in Table 2 below.

[0183] <Standards for Residue Determination and Evaluation>

[0184] Good: No Ag or ITO residue was produced.

[0185] Defect: Production of Ag or ITO residue

[0186] 3. Silver re-adsorption

[0187] The silver etching solution compositions of Examples 1-3 and Comparative Examples 1-7 were placed in a jet etching experimental apparatus (model name: ETCHER (TFT), SEMES Corporation). The temperature was set to 40°C and heated until it reached 40 ± 0.1°C, at which point the etching process of the test pieces was performed. The total etching time was 85 seconds. The substrate was placed in and jetting began. After the 85-second etching time was completed, the substrate was removed, washed with deionized water, and dried using a hot air drying device. After washing and drying, the substrate was cut off and measured using a scanning electron microscope (SEM; model name: SU-8010, HITACHI Corporation). Due to the etching process, the number of silver particles adsorbed on Ti above the Ti / Al / Ti triple film exposed in the Source / Drain region of the substrate was measured and evaluated according to the following criteria. The results are shown in Table 2 below.

[0188] <Evaluation Criteria for Silver Resorption>

[0189] Good: [Silver re-adsorption count less than 10]

[0190] Defect: [The number of silver re-adsorbed exceeds 10]

[0191] 4. Evaluation of conductive film etching rate

[0192] The silver etching solution compositions of Examples 1-3 and Comparative Examples 1-7 were placed in a jet etching experimental apparatus (model name: ETCHER (TFT), SEMES Corporation). The temperature was set to 40°C and increased until it reached 40 ± 0.1°C, at which point the etching process of the test pieces was performed. To simulate the effects of external contaminants, the etching time of the top ITO film before and after the addition of artificially introduced organic substances (ethylenediamine and polyvinyl butyral) was compared to determine whether the etching rate decreased. Using the initial etching end point detection (EPD) of the top ITO film as a benchmark, a decrease of 5% or more was considered a decrease in etching rate. (Variations less than 5% can be considered as deviations at each substrate position during evaluation).

[0193] Example 1) Initial ITO etching end time (before organic material addition): 25 seconds / ITO etching end time after organic material addition: 26 seconds → Etching rate decreases, X occurs.

[0194] Example 2) Initial ITO etching completion time (before organic material addition): 25 seconds / ITO etching completion time after organic material addition: 28 seconds → Etching rate decreases and O occurs

[0195] 5. Mouse Bite Phenomenon (Local Over-etching of Wiring)

[0196] The etching solutions of Examples 1-3 and Comparative Examples 1-7 were placed in a jet etching experimental apparatus (model name: 5.5ETCHER, Prowet Corporation). The temperature was set to 40°C and heated until it reached 40 ± 0.1°C, at which point the etching process of the test pieces was performed. The total etching time was 100 seconds. The substrate was placed in the apparatus and jet etching was started. After the 100-second etching time was completed, the substrate was removed, cleaned with deionized water, and dried using a hot air drying device. The photoresist pattern was removed using a photoresist stripper. After cleaning and drying, the experiments were performed using a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI Corporation) using the post-etching analysis method. The results were evaluated according to the following criteria and are shown in Table 2 below.

[0197] <Mouse Bite Evaluation Criteria>

[0198] ○: Excellent (no localized areas where wiring width is reduced to below 1.5μm)

[0199] X: Defect (there are localized areas where the wiring width is reduced to below 1.5μm)

[0200] Table 2

[0201]

[0202]

[0203] Referring to Table 2 above, it can be seen that, in the case of the etching solutions of Examples 1 to 3, the side etching achieved by additional etching of 50% (O / E 50%) and 100% (O / E 100%) using both new and old etching solutions falls within the range of 0.3 μm and below. Therefore, it can be concluded that, in the case of the etching solutions of Examples 1 to 3, the side etching is within the preferred range. Furthermore, it can be confirmed that, in the case of the etching solutions of Examples 1 to 3, the evaluation of Ag residue and ITO residue, as well as the evaluation of Ag re-adsorption, are good, and no decrease in etching rate or MouseBite phenomenon is observed.

[0204] As in Comparative Examples 1 to 3, when the etching solution composition does not contain metal salt or the metal salt content exceeds 0.01% by weight and is less than 1.0% by weight, a decrease in etching rate occurs, or precipitates are generated in the etching solution due to the use of excessive metal salt.

[0205] As in Comparative Example 4, when using a metal salt containing iron, the Mouse Bite phenomenon can occur due to the oxidation of the silver film.

[0206] As in Comparative Examples 5 to 7, silver residue may be produced or the Side Etch value may exceed 0.3 μm in the absence of nitrate or in a range of 0.5% by weight or more but less than 7% by weight, thus confirming non-compliance with specifications (Spec.out).

[0207] Figure 9 This is a diagram illustrating the formation of a metal pattern using an etching solution composition according to an embodiment of the present invention and an etching solution composition according to a comparative example. Figure 9 This is a graph showing the evaluation of unilateral CD skew, silver residue, silver resorption, and bulk residue after forming a metal pattern using the etching solution compositions of Example 1 and Comparative Example 8. At this time, based on the time point at which the etching of the metal pattern ended, additional etching of 50% (O / E 50%) and additional etching of 100% (O / E 100%) were performed, and the measurements were performed using a scanning electron microscope (SEM). The results are shown below. Figure 9 .exist Figure 9In this context, "new etching solution" refers to the appearance of a metal pattern immediately after the etching solution is prepared, while "old etching solution" refers to the appearance of a metal pattern formed after an etching process has been carried out over a long period of time, with 1000 ppm of Ag powder completely dissolved in the etching solution. That is, Figure 9 The "old etching solution" is used to confirm the etching characteristics based on the number of treatments performed with the etching solution composition. This is illustrated by showing the pattern formed after adding 1000 ppm of silver (Ag) to the etching solution composition. On the other hand, the block residue is evaluated according to the following criteria, and the results are shown below. Figure 9 .

[0208] <Evaluation Standard for Block Residue>

[0209] Lv.0: No visible marks / no residue on the entire surface

[0210] Lv.1: No visible streaks / countable levels of residue

[0211] Lv.2: No visible marks / 1 / 8 of the total area of ​​residue

[0212] Lv.3: Visible markings (weak) / 1 / 4 of the total area of ​​residue

[0213] Lv.4: Visible markings (medium) / 1 / 2 of the total area of ​​residue

[0214] Lv.5: Visible markings (strong) / Overall area of ​​residue

[0215] exist Figure 9 Comparative Example 8 is a conventional etching solution composition containing a phosphoric acid composition. The etching solution composition according to one embodiment (Example 1) is an etching solution composition containing 8% by weight or more and 15% by weight of nitric acid, 3% by weight or more and 8% by weight of alkyl sulfonic acid, 25% by weight or more and 55% by weight of organic acid, 15% by weight or more and 25% by weight of sulfate, 0.01% by weight or more and 1.0% by weight of metal salt, 0.5% by weight or more and 7% by weight of nitrate, and the balance being water.

[0216] Reference Figure 9It can be confirmed that the CD skew of the metal pattern formed using the etching solution composition according to an embodiment of the present invention has a lower CD skew value than that of Comparative Example 8, with no silver residue, low silver re-adsorption, and reduced bulk residue. Furthermore, it can be confirmed that in the case of the metal pattern formed using the etching solution composition according to an embodiment of the present invention, even if the added silver (Ag) increases from 0 ppm to 1000 ppm, the CD skew remains within the range of 0.16 to 0.20, with no silver residue, low silver re-adsorption, and no bulk residue. That is, it can be confirmed that even with repeated use of the etching solution composition according to an embodiment, the required physical properties of the etching solution composition remain constant even with increased silver (Ag) ion concentration. The etching solution composition according to an embodiment of the present invention does not produce defects due to silver (Ag) particles even with increased treatment cycles, thus allowing for increased treatment cycles compared to conventional etching solution compositions.

[0217] 6. EPD Restoration Evaluation

[0218] Tables 4 and 5 show the results of EPD recovery evaluation based on the addition of metal salts in an etching solution composition according to an embodiment of the present invention. The recovery evaluation based on the addition of metal salts was performed by monitoring EPD after adding the aforementioned first compound and metal salt to an etching solution composition that does not contain metal salts. After adding the etching solution composition to an etching solution composition that does not contain metal salts, the EPD was measured based on the concentration of the added first compound. Then, after recovery was performed by adding a metal salt with a stability constant of 25.3 or higher, the EPD was measured again. As a metal salt with a stability constant of 25.3 or higher, one of zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium was used, and the stability constant values ​​of said metal salts are shown in Table 3 below. Table 4 shows the EPD recovery evaluation results using nylon 6,6 as the first compound, and Table 5 shows the EPD recovery evaluation results using polyvinyl butyral, polyvinyl alcohol, polyacrylamide, or ethylenediamine as the first compound. As shown in Table 4, after confirming the EPD delay by gradually increasing the concentration of nylon 6,6 at 0 ppm, 1000 ppm, 3000 ppm, and 5000 ppm, the EPD was measured again after adding 1500 ppm of zirconium phosphate, and the recovery result was confirmed. Additionally, as shown in Table 5, when the first compound was polyvinyl butyral, polyvinyl alcohol, polyacrylamide, or ethylenediamine, after confirming the EPD delay by gradually increasing the concentration at 0 ppm, 25 ppm, 50 ppm, and 100 ppm, the EPD was measured again after adding 1500 ppm of zirconium phosphate, and the recovery result was confirmed.

[0219] Table 3

[0220]

[0221]

[0222] Table 4

[0223]

[0224] Table 5

[0225]

[0226] Referring to Tables 4 and 5, it can be confirmed that the EPD increases after the addition of the first compound, but the EPD recovers and returns to the level before the addition of the first compound, which is a contaminant, after the addition of zirconium phosphate. Therefore, it can be seen that the etching solution composition according to an embodiment of the present invention can suppress the EPD delay caused by contaminants by introducing a metal salt with a stability constant of 25.3 or higher.

[0227] 7. EPD Delay Evaluation

[0228] Tables 6 and 7 show the results of EPD delay evaluation for the addition of a first compound in the etching solution composition according to an embodiment of the present invention. The EPD delay evaluation was performed by monitoring the EPD after adding the aforementioned first compound to the etching solution composition of Example 1. Table 6 shows the EPD delay evaluation results using nylon 6,6 as the first compound, and Table 7 shows the EPD delay evaluation results using polyvinyl butyral, polyvinyl alcohol, polyacrylamide, or ethylenediamine as the first compound. As shown in Table 6, the EPD was measured and confirmed while the concentration of nylon 6,6 was gradually increased to 0 ppm, 1000 ppm, 3000 ppm, and 5000 ppm. Additionally, as shown in Table 7, when the first compound was polyvinyl butyral, polyvinyl alcohol, polyacrylamide, or ethylenediamine, the EPD was measured and confirmed while the concentration was increased to 0 ppm, 25 ppm, 50 ppm, and 100 ppm.

[0229] Table 6

[0230]

[0231] Table 7

[0232]

[0233] Referring to Tables 6 and 7, it can be confirmed that even when the first compound is added to the etching solution composition according to an embodiment of the present invention, the EPD does not increase and remains at the level before the addition of the first compound. Therefore, it can be understood that the etching solution composition of an embodiment of the present invention can suppress the EPD delay phenomenon caused by contaminants.

[0234] The present invention has been described above with reference to preferred embodiments. However, it will be understood by those skilled in the art or those with ordinary knowledge of the invention that various modifications and alterations can be made to the invention without departing from the scope of the concept and technical field of the invention as set forth in the appended claims. Therefore, the technical scope of the present invention is not limited to the contents described in the detailed description of the specification, but should be determined by the claims.

Claims

1. An etching solution composition, wherein, Include: Nitric acid, 8% or more but less than 15% by weight; Alkyl sulfonic acid, 3% or more and 8% or less by weight; Organic acids, 25% by weight or more and 55% by weight or less; Sulfates of 15% to 25% by weight or more; Metal salts of 0.01% by weight or more and 1.0% by weight or less; Nitrates of 0.5% to 7% by weight; and This makes the total weight of the entire composition 100% by weight of water. The stability constant of the metal salt relative to the contaminants generated within the etching equipment used in the etching process is 25.3 or higher. The nitrate comprises at least one of sodium nitrate, potassium nitrate, ammonium nitrate, calcium nitrate, magnesium nitrate, and aluminum nitrate. The alkyl sulfonic acid includes at least one of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid. The organic acid includes at least one selected from acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid. The sulfate comprises at least one of potassium bisulfate, sodium bisulfate, and ammonium bisulfate.

2. The etching solution composition according to claim 1, wherein, The metal salt contains at least one of zirconium, niobium, cobalt, hafnium, bismuth, palladium, and uranium.

3. A method for manufacturing a metal pattern, wherein, include: The step of forming a silver-containing metal layer on a substrate; The step of forming a photoresist pattern on the metal layer; The step of using the photoresist pattern as a mask to pattern the metal layer with the etching solution composition of claim 1 or 2; as well as The step of removing the photoresist pattern.

4. The method for manufacturing a metal pattern according to claim 3, wherein, The metal layer includes: First conductive film; A metal film, disposed on the first conductive film, and comprising the silver; and A second conductive film is disposed on the metal film. The first conductive film and the second conductive film are each independently a transparent or semi-transparent electrode.

5. A method for manufacturing a display device, wherein, include: The step of forming a thin-film transistor on a substrate; The step of forming a planarization layer on the thin-film transistor; The step of forming an electrode layer on the planarization layer; as well as The step of etching the electrode layer to form a pixel electrode using the etching solution composition according to claim 1 or 2.

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