一种SiC MOSFET的去饱和电路参数设计方法

By analyzing the operating modes and conduction characteristic curve fitting of the SiC MOSFET desaturation protection circuit, effective desaturation circuit parameters were designed, solving the problem of SiC MOSFET burnout due to overcurrent and achieving rapid protection and safe operation.

CN116451629BActive Publication Date: 2026-07-17SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SOUTHEAST UNIV
Filing Date
2023-05-25
Publication Date
2026-07-17

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Abstract

本发明公开了一种SiCMOSFET的去饱和电路参数设计方法，包括以下步骤：分析开关周期内去饱和保护电路的工作模态，并给出消隐时间td与稳态时VDESAT的表达式；根据给定的消隐时间td与消隐电阻RBLANK等参数可计算得到消隐电容CBLANK；提取开关管、阻断二极管数据手册中的导通特性曲线数据，并对其进行多项式拟合；将开关管最大导通电流IDamx与此时的阻断二极管稳态正向电流If分别代入拟合得到的开关管、阻断二极管导通特性多项式得到各自的导通电压Vf与VDS；反推稳态时VDESAT的表达式，并代入已得到的各参数计算出分压电阻RDSAT的值。本发明方法可以根据目标电流阈值准确计算出对应的电路参数，且具有较快的触发速度，保证开关管不被过大的电流损坏。
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