A non-volatile modulated photoelectric sensor, its preparation method and application

Abstract

The application belongs to the technical field of photoelectric sensing devices, and particularly relates to a nonvolatile regulated photoelectric sensor and a preparation method and application thereof. The photoelectric sensor comprises, from bottom to top, a substrate, a channel layer, a storage layer, a barrier layer and an ion gate dielectric layer; the storage layer is wrapped around the periphery of the channel layer; the storage layer comprises graphdiyne; and the channel layer comprises carbon nanotubes. The carbon nanotube@graphdiyne heterojunction formed by the carbon nanotubes and the graphdiyne has a large specific surface area, provides more sites for Li + storage, and thus realizes the low-energy-consumption nonvolatile storage characteristic; meanwhile, the light responsivity can be regulated through a light pulse. The application regulates the density of Li + in the graphdiyne layer through a voltage pulse and a light pulse, and thus realizes different conductive states and light responsivity.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic sensor technology, and specifically relates to a non-volatile controllable optoelectronic sensor, its fabrication method, and its application. Background Technology

[0002] With the rapid development of artificial intelligence, big data, and the Internet of Things, visual sensors have received increasing attention. The dramatic increase in the number of sensors, along with the ever-increasing pixel count and frame rate, generates a massive amount of unstructured data, making visual image processing a "data-intensive" task. This is especially true for traditional CMOS vision chips, which employ independent sensing, computing, and storage units. The frequent transfer of large amounts of data between these units and the analog-to-digital conversion place stringent demands on the chip's computing power and energy consumption.

[0003] In contrast, the human visual system is highly efficient and energy-saving in perceiving and processing visual information. The retina at the front converts visual signals into electrical signals and encodes the image (extracting image features) through complex internal neural circuits. The encoded data is then transmitted to the visual cortex of the brain via the optic nerve for further processing. The retina plays a crucial role in the human visual system, possessing both the function of detecting and processing visual signals. In recent years, although neuromorphic visual devices and systems simulating the function of the human retina have developed rapidly, significantly reducing the transmission of redundant data and thus lowering the computational latency and energy consumption of visual chips, which is of great significance for a series of "time-sensitive" applications such as autonomous driving and intelligent robots, when photoelectric sensors cannot achieve non-volatile control of photoresponse, they cannot simulate the function of biological synapses, and therefore cannot achieve integrated sensing and computing.

[0004] Therefore, there is an urgent need to provide a photoelectric sensor that has low-power non-volatile storage characteristics, can realize different conductivity states and photoresponse rates, and has good stability, durability and write / erase capability. Summary of the Invention

[0005] This invention aims to solve one or more technical problems existing in the prior art, and at least provide a beneficial option or create conditions. This invention provides a non-volatile modulated photoelectric sensor, which has low-power non-volatile storage characteristics, can achieve different conductance states and photoresponse rates, and has good stability, durability, and write / erase capabilities.

[0006] The inventive concept of this invention: The photoelectric sensor of this invention comprises, from bottom to top: a substrate, a channel layer, a storage layer, a barrier layer, and an ion gate dielectric layer; the substrate serves as a support layer, and the storage layer surrounds the channel layer; the storage layer comprises graphdiyne; the channel layer comprises carbon nanotubes. Because the carbon nanotube@graphdiyne heterojunction formed by carbon nanotubes and graphdiyne has a large specific surface area, it can be used for Li... + The storage provides more storage sites. The ion gate dielectric layer and the storage layer are connected by graphdiyne with threshold switching properties, utilizing the storage layer to capture Li in the ion gate dielectric layer. + This enables low-energy non-volatile storage and achieves ultra-low-energy, high-efficiency control of the channel material under low-voltage pulses; furthermore, the presence of the storage layer avoids Li + The absence of damage to the channel lattice results in improved device durability and stability. The barrier layer prevents direct contact between the ion gate dielectric layer and the channel layer, thus avoiding damage to the channel lattice from repeated lithium ion implantation. Simultaneously, the introduction of light provides new degrees of freedom for device modulation, allowing for control via optical signals and Li-ion interaction. + The synergistic effect of the gate signal enables photoelectric sensors to perform photoresponsivity modulation and non-volatile modulation, providing a new strategy for efficient and low-power visual neural networks.

[0007] Therefore, the present invention provides a non-volatile controllable photoelectric sensor.

[0008] Specifically, a non-volatile controllable photoelectric sensor, comprising, from bottom to top: a substrate, a channel layer, a storage layer, a barrier layer, and an ion gate dielectric layer;

[0009] The storage layer covers the periphery of the channel layer;

[0010] The storage layer includes graphynylene;

[0011] The channel layer comprises carbon nanotubes.

[0012] Specifically, the alkyne bonds in graphdiyne can act as a positively charged attracting matrix, providing Li in the ion gate dielectric layer. + When not trapped in the storage layer, π electrons in the storage layer facilitate the separation and transfer of photogenerated holes from the carbon nanotube to the storage layer; photogenerated electrons remaining in the carbon nanotube cause a decrease in the channel layer conductivity, which manifests as a negative photocurrent. Finally, under illumination, as the Li trapped in the storage layer... + As the density increases, an electrostatic field is formed from the storage layer to the carbon nanotubes, which prevents the injection of holes and counteracts the attraction of the alkyne bonds to the holes. When the electrostatic field is strong enough, the graphdiyne layer will attract photogenerated electrons, thereby causing a positive photoresponse and realizing the regulation of photoresponsivity.

[0013] Specifically, graphyne exhibits threshold switching properties, and carbon nanotubes and graphyne can form @graphyne heterostructures, which are Li + The storage provides more sites, allowing Li to be captured in the ion gate dielectric layer using the storage layer. + It can achieve low-energy non-volatile storage, thus enabling ultra-low-energy and efficient control of channel materials under low-voltage pulses.

[0014] Preferably, the substrate comprises a Si layer and a SiO2 layer grown on the Si layer.

[0015] Preferably, the thickness of the Si layer is 675 nm; the thickness of the SiO2 layer is 25 nm.

[0016] Specifically, substrates of different thicknesses can be selected based on the actual situation.

[0017] Preferably, the carbon nanotubes include single-walled carbon nanotubes and multi-walled carbon nanotubes; the ion gate dielectric layer includes a solid electrolyte; the solid electrolyte is selected from at least one of lithium perchlorate, lithium chloride, and sodium chloride; and the barrier layer is selected from at least one of polymethyl methacrylate and boron nitride.

[0018] Specifically, the ion gate dielectric is a conductive electrolyte that can perform Li ion exchange under the drive of low-voltage pulses. + Ion migration; additionally, the presence of graphdiene in the storage layer can trap Li. + Li ions + Li provides a site for ion anchoring. + It can be rapidly injected and stored in graphylene under the drive of a low-voltage electric field, thereby regulating the electrical conductivity state of the channel layer and achieving the purpose of ultra-low energy consumption control of photoelectric sensors.

[0019] Specifically, the barrier layer prevents the ion gate dielectric layer from contacting the channel layer, thereby protecting the crystal structure of the channel material.

[0020] Preferably, a source electrode is provided at one end of the channel layer, and a drain electrode is provided at the other end of the channel layer; a gate electrode is provided at the upper end of the ion gate dielectric layer.

[0021] Preferably, the gate electrode, the source electrode, and the drain electrode each independently comprise chromium and gold.

[0022] Preferably, the thickness of the chromium is 2-8 nm, and the thickness of the gold is 40-60 nm.

[0023] More preferably, the thickness of the chromium is 5 nm and the thickness of the gold is 50 nm.

[0024] A second aspect of the present invention provides a method for fabricating the non-volatile modulated photoelectric sensor described in the first aspect of the present invention, comprising the following steps:

[0025] The channel layer, storage layer, barrier layer, and ion gate dielectric layer are sequentially transferred onto the substrate to fabricate a photoelectric sensor.

[0026] Preferably, graphdiene is generated around the channel layer using van der Waals epitaxy to serve as the storage layer; the channel layer is fabricated using inkjet printing; and the barrier layer and ion gate dielectric layer are fabricated using spin coating.

[0027] Preferably, the reaction temperature of the van der Waals epitaxy is 20-25℃ and the reaction time is 1-3h; the spin coating speed of the spin coating method is 1200-1800r / min and the spin coating time is 35-55s.

[0028] More preferably, the reaction temperature of the van der Waals epitaxy is 20-25℃ and the reaction time is 2h; the spin coating speed of the spin coating method is 1500r / min and the spin coating time is 45s.

[0029] Specifically, the reaction involves the desiliconized monomer, hexaethynylbenzene, reacting in a toluene-pyridine system with copper acetate as a catalyst.

[0030] Preferably, the channel layer and the storage layer are transferred by inkjet printing; the barrier layer and the ion gate dielectric layer are transferred by spin coating.

[0031] Preferably, the gate electrode is prepared on the ion gate dielectric layer using laser direct writing lithography and thermal evaporation techniques; the source electrode and drain electrode are prepared on the channel layer using laser direct writing lithography and thermal evaporation techniques.

[0032] Specifically, the gate electrode is used to connect to an external voltage, thereby providing a voltage pulse to the photoelectric sensor.

[0033] Specifically, charge transport between the source electrode and the drain electrode is mainly carried out through carbon nanotubes.

[0034] A third aspect of the present invention also provides an application of the non-volatile modulated photoelectric sensor described in the first aspect of the present invention in an analog visual neural network system.

[0035] Compared with the prior art, the beneficial effects of the technical solution provided by the present invention are as follows:

[0036] (1) The ion gate dielectric layer of this invention is a conductive electrolyte, which can perform Li ion exchange under the drive of a low voltage pulse. + Ion migration and Li trapping using the storage layer +Furthermore, the carbon nanotube@graphyne heterostructure formed by carbon nanotubes and graphyne has a large specific surface area, which is beneficial for Li + The storage provides more storage sites, thus achieving low-energy, non-volatile storage characteristics; at the same time, the introduction of light provides new degrees of freedom for the control of photoelectric sensors, through the interaction of light signals with Li + The synergistic effect of the grating signal enables photoelectric sensors to perform photoresponsivity modulation and non-volatile modulation, providing a new strategy for efficient and low-power visual neural networks. Its excellent photoresponsivity has broad application prospects in visual neural network systems.

[0037] (2) The photoelectric sensor of the present invention can regulate the Li in the graphyne layer through voltage pulses and light pulses. + The density is adjusted to achieve different electrical conductance states and photoresponse rates.

[0038] (3) By applying voltage pulses of -0.5V (10ms) and 0.5V (10ms) to the ion gate dielectric layer, the photoelectric sensor can switch to the off state and the on state respectively, which has millisecond-level write and erase capability. Furthermore, by cyclically applying voltage, the switching current of the photoelectric sensor does not change significantly, which has good durability. In addition, after applying voltage, the current of the 32 programmable conductance states of the photoelectric sensor does not change significantly, which has good stability. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the photoelectric sensor according to Embodiment 1 of the present invention;

[0040] Figure 2 This is a schematic cross-sectional view of the photoelectric sensor of Embodiment 1 of the present invention along the AA direction;

[0041] Figure 3 This is a flowchart of the fabrication method of the photoelectric sensor in Embodiment 1 of the present invention;

[0042] Figure 4 This is a schematic diagram of a 3×3×3 optical sensor array of the photoelectric sensor in Embodiment 1 of the present invention;

[0043] Figure 5 This is a schematic diagram of the mechanism of the photoelectric sensor of Embodiment 1 of the present invention when a positive voltage pulse is applied to the ion gate dielectric layer;

[0044] Figure 6 This is a schematic diagram of the mechanism of the photoelectric sensor in Embodiment 1 of the present invention after the positive voltage pulse is removed;

[0045] Figure 7 This is a schematic diagram of the mechanism of the photoelectric sensor of Embodiment 1 of the present invention when a negative voltage is applied to the ion gate dielectric layer;

[0046] Figure 8 This is a diagram illustrating the mechanism of the photoelectric sensor in Embodiment 1 of the present invention under the action of light pulses;

[0047] Figure 9 This is a current-voltage curve of the photoelectric sensor with positive and negative voltage dual scans according to Embodiment 1 of the present invention;

[0048] Figure 10 This is a test diagram of the write / erase capability of the photoelectric sensor in Embodiment 1 of the present invention;

[0049] Figure 11 This is a durability test diagram of the photoelectric sensor according to Embodiment 1 of the present invention;

[0050] Figure 12 This is a stability test diagram of the photoelectric sensor in Embodiment 1 of the present invention;

[0051] Figure 13 This is a graph showing the minimum power consumption of the photoelectric sensor according to Embodiment 1 of the present invention.

[0052] Figure 14 This is a negative light response diagram of the photoelectric sensor of Embodiment 1 of the present invention under light pulses;

[0053] Figure 15 This is the positive light response diagram of the photoelectric sensor of Embodiment 1 of the present invention under light pulses;

[0054] Figure 16 The diagram shows the 32 conductance states of the photoelectric sensor array under 1000 repeated tests of the photoelectric sensor of Embodiment 1 of the present invention.

[0055] Figure 17 This is a graph showing the photoresponse rate of 32 photoelectric sensor arrays under 1000 repeated tests of the photoelectric sensor of Embodiment 1 of the present invention.

[0056] Wherein, 1 is the substrate, 11 is the Si layer, 12 is the SiO2 layer, 2 is the storage layer, 3 is the channel layer, 4 is the barrier layer, 5 is the ion gate dielectric layer, 6 is the gate electrode, 7 is the drain electrode, and 8 is the source electrode. Detailed Implementation

[0057] To enable those skilled in the art to more clearly understand the technical solutions described in this invention, the following embodiments are provided for illustration. It should be noted that the following embodiments do not constitute a limitation on the scope of protection claimed by this invention.

[0058] Unless otherwise specified, the raw materials, reagents or devices used in the following examples are available from conventional commercial sources or can be obtained by existing known methods.

[0059] Example 1

[0060] A photoelectric sensor comprises, from bottom to top: a substrate 1, a channel layer 3, a storage layer 2, a barrier layer 4, and an ion gate dielectric layer 5; the storage layer 2 covers the periphery of the channel layer 3, the channel layer 3 is a single-walled carbon nanotube (SWNT), and the storage layer 2 is graphodyne (GDY); a source electrode 8 is provided at one end of the channel layer 3, and a drain electrode 7 is provided at the other end of the channel layer 3; a gate electrode 6 is provided above the ion gate dielectric layer 5.

[0061] The substrate 1 includes a Si layer 11 and a SiO2 layer 12 grown on the Si layer, with the thicknesses of the Si layer 11 and the SiO2 layer 12 being 675 nm and 25 nm, respectively.

[0062] The gate electrode 6, source electrode 8, and drain electrode 7 are all made of chromium and gold, with the chromium layer being 5nm thick and the gold layer being 50nm thick. The 5nm chromium layer is plated first, followed by the 50nm gold layer.

[0063] A schematic diagram of the photoelectric sensor in Example 1 is shown below. Figure 1 As shown.

[0064] A schematic cross-sectional view of the photoelectric sensor in Example 1 along the AA direction, as shown below. Figure 2 As shown.

[0065] A method for fabricating a photoelectric sensor includes the following steps:

[0066] The channel layer 3 was prepared by inkjet printing.

[0067] Using van der Waals epitaxy, at 25°C, the desilication monomer, i.e., hexaethynylbenzene, was reacted in a toluene-pyridine system with copper acetate as a catalyst for 2 hours to synthesize graphyne as storage layer 2 around the channel layer 3.

[0068] The barrier layer 4 and the ion gate dielectric layer 5 were prepared by spin coating at a spin coating speed of 1500 r / min for 45 s.

[0069] A gate electrode 6 is fabricated on the ion gate dielectric layer 5 using laser direct writing lithography and thermal evaporation techniques, and a source electrode 8 and a drain electrode 7 are fabricated at both ends of the channel layer 3, respectively.

[0070] The channel layer 3, storage layer 2, barrier layer 4, and ion gate dielectric layer 5 are sequentially transferred onto the substrate 1 to fabricate a photoelectric sensor.

[0071] The channel layer 3 and the storage layer 2 are transferred by inkjet printing; the barrier layer 4 and the ion gate dielectric layer 5 are transferred by spin coating.

[0072] The flowchart of the photoelectric sensor fabrication method in Example 1 is as follows: Figure 3 As shown.

[0073] The photoelectric sensor in Embodiment 1 of this invention can be configured into a 3×3×3 photoelectric sensor array, such as... Figure 4 As shown.

[0074] Example 2

[0075] This embodiment 2 is used to illustrate the low-power non-volatile storage of the photoelectric sensor of embodiment 1 under voltage pulses.

[0076] Since the storage layer is a graphyne (GDY layer) film, the lateral conductivity of the graphyne film is much lower than that of the single-walled carbon nanotubes (SWNTs) in the channel layer. Therefore, the charge transport between the source electrode and the drain electrode is mainly carried out through the single-walled carbon nanotubes.

[0077] The gate electrode is controlled by applying a positive gate voltage (VG) using an external voltage. Driven by VG, positively charged Li in the electrolyte of the ion gate dielectric layer... + Migrating from the electrolyte to the electrolyte / GDY interface, due to the uniform distribution of macropores in GDY, Li + It can penetrate the GDY layer, i.e., the memory layer, with a relatively small gate bias voltage. It is worth noting that Li... + Entering SWNT requires a higher gate voltage pulse, therefore Li can be controlled with a smaller VG (0.5V). + Enter the GDY layer while maintaining Li + Impermeable to SWNT channels. Li entering the GDY layer. + This can be viewed as the positive charges trapped in the GDY layer forming a locally high-capacitance electric double layer (EDL) near the SWNT. The EDL gate control effect significantly alters the carrier density and the conductivity of the SWNT. The mechanism of a photoelectric sensor when a positive voltage pulse is applied to the ion gate dielectric layer is as follows: Figure 5 As shown.

[0078] When the positive voltage pulse VG applied to the ion gate dielectric layer is removed, Li + The diffusion barrier in the GDY layer restricts the Li trapped in the GDY layer. + Migration occurs, therefore, in the absence of an external electric field, Li + The synaptic weights, namely conductivity and photoresponsivity, are stored in the GDY layer. This is the mechanism by which the photoelectric sensor operates after the positive voltage pulse is removed. Figure 6 As shown.

[0079] Finally, by applying an opposite VG pulse, i.e., a negative gate voltage, to the gate electrode, the Li-ionization process can be achieved. + The mechanism of a photoelectric sensor when a negative voltage is applied to the ion gate dielectric layer in the electrolyte extracted from the GDY layer is as follows: Figure 7 As shown. When the Li trapped by the GDY layer is removed + Afterwards, the device returns to its initial state.

[0080] in, Figure 5 In this diagram, S represents the source electrode, D represents the drain electrode, Gate represents the switch, electrolyte represents ions, and E represents Li. + Migrate to the GDY layer; Figure 6 In the middle, intercalation Li + in GDY indicates Li + Stored in the GDY layer; Figure 7 In this context, E represents Li + The ion gate dielectric layer was extracted from the GDY layer.

[0081] Example 3

[0082] This embodiment 3 is used to illustrate the photoresponsivity modulation of the photoelectric sensor of embodiment 1 of the present invention under light pulses.

[0083] A light pulse was applied to the photoelectric sensor of Example 1. The process parameters of the light pulse were: wavelength of 532 nm and intensity of 1.0 nW / μm. -2 The laser pulse. First, the alkyne bonds of GDY are used as a positively charged attracting matrix; second, in Li + If not trapped by the GDY layer, π electrons in the GDY layer facilitate the separation and transfer of photogenerated holes from the SWNT to the GDY layer. Photogenerated electrons remaining in the SWNT cause a decrease in channel conductivity, resulting in a negative photocurrent. Finally, with the action of the light pulse, the Li trapped in the GDY layer... + As the density increases, an electrostatic field is formed from GDY to SWNT, preventing hole injection and counteracting the attraction of alkyne bonds to holes. When the electrostatic field is strong enough, the GDY layer attracts photogenerated electrons, thereby causing a positive photoresponse. Schematic diagram of the working mechanism of the photoelectric sensor in Example 1 under the action of light pulses. Figure 8 As shown, where, Figure 8 (a) is Li + A diagram illustrating the working mechanism of a photoelectric sensor under light pulses when it is not captured by the GDY layer. Figure 8 (b) is Li + A diagram illustrating the working mechanism of a photoelectric sensor under light pulses after being captured by the GDY layer.

[0084] in, Figure 8 In (a), without Li + intercalation indicates that Li was not inserted. + Li +Not captured by the GDY layer, charge-attracting sites represent charge attraction points; Figure 8 (b) with Li + intercalation indicates the insertion of Li + Li + Captured by the GDY layer.

[0085] Performance testing

[0086] To investigate the write / erase capability of the device, ±0.5V, 10ms voltage pulses are applied to the ion-gate dielectric layer via the gate electrode (i.e., 10ms of 0.5V followed by 10ms of -0.5V). To investigate the cycle durability of the device, ±0.5V, 10ms voltage pulses are applied cyclically to the ion-gate dielectric layer via the gate electrode (i.e., cyclically inputting 0.5V and -0.5V voltages for 10ms). To investigate the stability of the device, ±0.5V, 10ms voltage pulses are applied to the ion-gate dielectric layer via the gate electrode, and the current state of the device is read out using a 0.1V readout voltage. Finally, to investigate the minimum power consumption of the photoelectric sensor under single-pulse conditions by controlling the voltage pulses input to the ion-gate dielectric layer.

[0087] The current-voltage curves of the photoelectric sensor in Example 1, obtained by double-scanning positive and negative voltages, are as follows: Figure 9 As shown. Among them, Figure 9 In the graph, the horizontal axis represents the gate voltage (V), and the vertical axis represents the current (A). From Figure 9 It can be seen that the photoelectric sensor of Example 1 has the characteristic of threshold switching, and is clockwise with a switching ratio of 103.

[0088] The write / erase capability test of the photoelectric sensor in Example 1, such as... Figure 10 As shown. Among them, Figure 10 (a) is a diagram of inhibitory synaptic behavior. Figure 10 (b) is a diagram of excitatory synaptic behavior. Figure 10 (a) and Figure 10 In (b), the horizontal axis represents time (s), and the vertical axis represents current (A). Figure 10 In (a), ΔI = 6pA represents a 6pA decrease in postsynaptic current. Figure 10 In (b), ΔI = 7pA indicates that the postsynaptic current increases by 7pA. Figure 10 It can be seen that by applying voltage pulses of -0.5V (10ms) and 0.5V (10ms) to the ion gate dielectric layer by the gate electrode, the photoelectric sensor can be switched to the off state and the on state respectively, indicating that the photoelectric sensor of Example 1 has millisecond-level write and erase capability.

[0089] Durability testing of the photoelectric sensor in Example 1, such as Figure 11 As shown. Among them, Figure 11 The horizontal axis represents time (s), and the vertical axis represents conductance (nS). Voltage pulses of -0.5V (10ms) and 0.5V (10ms) were cyclically applied 10⁵ times to the ion-gate dielectric layer via the gate electrode, and changes in the current state were monitored. Figure 11 It can be seen that the switching current hardly changes, indicating that the photoelectric sensor of Example 1 has good durability.

[0090] The stability test of the photoelectric sensor in Example 1, such as... Figure 12 As shown. Among them, Figure 12 The horizontal axis represents the number of iterations (×10). 5 The vertical axis represents conductivity (S). After applying a voltage pulse of ±0.5V for 10ms to the ion-gate dielectric layer via the gate electrode, the change in current is monitored at a readout voltage of 0.1V. Figure 12 It can be seen that the photoelectric sensor of Example 1 has 32 programmable conductance states, and the current in each conductance state does not change significantly, indicating that the photoelectric sensor of Example 1 has good stability.

[0091] The minimum power consumption curve of the photoelectric sensor in Example 1 is shown below. Figure 13 As shown. Among them, Figure 13 (a) is the minimum energy consumption diagram for inhibitory synaptic behavior; Figure 13 (b) is the minimum energy consumption diagram for excitatory synaptic behavior; Figure 13 (a) The horizontal axis represents time (s), the vertical axis represents current (A), and ΔI = 0.4pA means that the postsynaptic current decreases by 0.4pA; Figure 13 (b) The horizontal axis represents time (s), and the vertical axis represents current (A). ΔI = 0.7 pA indicates a postsynaptic current increase of 0.7 pA. After applying a 0.5 V voltage pulse to the ion-gate dielectric layer through the gate electrode, the current change is monitored at a readout voltage of 0.1 V. Figure 13 It can be seen that the photoelectric sensor in Example 1 consumes 50 Aj under a single pulse.

[0092] The negative light response of the photoelectric sensor in Example 1 under light pulses, such as Figure 14 As shown in the figure. The horizontal axis represents time (ms), and the vertical axis represents current (nA). From... Figure 14 It can be seen that in Li + When not captured by the GDY layer, the photoelectric sensor exhibits a negative light response.

[0093] The photoelectric sensor in Example 1 exhibits a positive light response under light pulses, such as... Figure 15As shown in the figure. The horizontal axis represents time (ms), and the vertical axis represents current (nA). From... Figure 15 It can be seen that Li was successfully captured in the GDY layer. + Afterwards, the GDY layer can induce the photoelectric sensor to exhibit a positive light response.

[0094] The photoelectric sensor of Example 1 exhibits a state diagram of 32 conductances of the photoelectric sensor array after 1000 repeated tests, as shown below. Figure 16 As shown in the figure. The horizontal axis represents conductivity (nS); the vertical axis represents cumulative probability (%). The specific process is as follows: at a wavelength of 532 nm and an intensity of 1.0 nW / μm... -2 The test was repeated 1000 times under the laser pulse. From Figure 16 It can be seen that, under different conductance states, the photoelectric sensor array achieved 32 different conductance states using the closed-loop programming method, indicating that the photoelectric sensor array of Example 1 can achieve symmetrical conductance modulation.

[0095] The photoresponse maps of the 32 photoresponse parameters of the photoelectric sensor array in Example 1 after 1000 repeated tests are shown below. Figure 17 As shown in the figure. The horizontal axis represents the discrete optical responsivity (mAW). -1 The vertical axis represents the cumulative probability (%). The specific process is as follows: at a wavelength of 532 nm and an intensity of 1.0 nW / μm... -2 The test was repeated 1000 times under the laser pulse. From Figure 17 It can be seen that, under different photoresponse states, the photoelectric sensor array achieved 32 different photoresponse states using the closed-loop programming method, indicating that the photoelectric sensor array of Example 1 can achieve linear photoresponse state updates.

[0096] The above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A photoelectric sensor, characterized in that, The photoelectric sensor comprises, from bottom to top, a substrate, a channel layer, a storage layer, a barrier layer, and an ion gate dielectric layer; The storage layer covers the periphery of the channel layer; The storage layer includes graphynylene; The channel layer comprises carbon nanotubes.

2. The photoelectric sensor according to claim 1, characterized in that, The substrate includes a Si layer and a SiO2 layer grown on the Si layer.

3. The photoelectric sensor according to claim 1, characterized in that, The carbon nanotubes include any one of single-walled carbon nanotubes and multi-walled carbon nanotubes; the ion gate dielectric layer includes a solid electrolyte; the solid electrolyte is selected from at least one of lithium perchlorate, lithium chloride, and sodium chloride; the barrier layer is selected from at least one of polymethyl methacrylate and boron nitride.

4. The photoelectric sensor according to claim 1, characterized in that, A source electrode is provided at one end of the channel layer, and a drain electrode is provided at the other end of the channel layer; a gate electrode is provided at the upper end of the ion gate dielectric layer.

5. The photoelectric sensor according to claim 4, characterized in that, The gate electrode, the source electrode, and the drain electrode each independently comprise chromium and gold.

6. The photoelectric sensor according to claim 5, characterized in that, The thickness of the chromium is 2-8 nm, and the thickness of the gold is 40-60 nm.

7. The method for fabricating the photoelectric sensor according to any one of claims 1-6, characterized in that, Includes the following steps: The channel layer, storage layer, barrier layer, and ion gate dielectric layer are sequentially transferred onto the substrate to obtain the photoelectric sensor.

8. The preparation method according to claim 7, characterized in that, Graphdiyne was generated around the channel layer using van der Waals epitaxy to serve as the storage layer; the channel layer was fabricated using inkjet printing; and the barrier layer and ion gate dielectric layer were fabricated using spin coating.

9. The preparation method according to claim 8, characterized in that, The reaction temperature of the van der Waals epitaxy method is 20-25℃, and the reaction time is 1-3h; the spin coating speed of the spin coating method is 1200-1800r / min, and the spin coating time is 35-55s.

10. The application of the photoelectric sensor according to any one of claims 1-6 in an analog visual neural network system.

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