一种改善定向凝固初期籽晶氧化引起凝固缺陷形成的方法
By adjusting the position and time control of the water-cooled plate in the directional solidification furnace, the solidification defect problem caused by seed crystal oxidation was solved, which simplified the process, reduced costs, and improved the success rate of preparing single-crystal superalloys.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIANGTAN UNIV
- Filing Date
- 2023-05-24
- Publication Date
- 2026-07-17
AI Technical Summary
In the preparation of single-crystal superalloys, the oxidation of the seed crystal tip leads to solidification defects, resulting in complicated processes and high costs, which limits the application of the seed crystal method in industrial production.
By adjusting the position of the water-cooled plate in the directional solidification furnace, the temperature field and microstructure evolution of the seed crystal can be controlled, preventing the seed crystal tip from oxidizing at high temperatures. After the melt is poured, the position of the water-cooled plate is adjusted and the settling time is extended to ensure the microstructure of the seed crystal in the remelting zone and reduce solidification defects.
It simplifies the process, reduces costs, increases the success rate of single crystal preparation, effectively improves solidification defects caused by seed crystal oxidation, and is suitable for industrial production.
Smart Images
Figure CN116460278B_ABST