AlGaInP light-emitting diode based on SiC substrate and its fabrication method

Abstract

This invention provides an AlGaInP light-emitting diode based on a SiC substrate and its fabrication method. This fabrication method grows an AlGaInP epitaxial layer on a SiC substrate with excellent thermal conductivity. Therefore, it is not necessary to transfer the AlGaInP epitaxial wafer to other substrates with high thermal conductivity through substrate transfer technology as in the prior art. The process is relatively simple. Considering the problem of lattice mismatch between SiC and AlGaInP, a target low-temperature buffer layer and a high-temperature buffer layer are grown on the SiC substrate to provide a better platform for subsequent epitaxial growth of AlGaInP. Furthermore, the target low-temperature buffer layer adopts a two-step growth method with different temperatures, which can significantly reduce the dislocation density.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronics technology, and more specifically, to an AlGaInP light-emitting diode based on a SiC substrate and its fabrication method. Background Technology

[0002] With the continuous development of science and technology, LED (Light Emitting Diode) has become a new type of light-emitting device. Compared with traditional light-emitting devices, LED has advantages such as energy saving, environmental protection, good color rendering and response speed. It has been widely used in people's lives and work, bringing great convenience to people's daily lives.

[0003] Among them, AlGaInP material, which matches the gallium arsenide lattice, can cover the visible light range of 560nm to 650nm, making it an ideal material for preparing green and red light-emitting diodes. It has broad application prospects in fields such as RGB three-color displays, traffic lights, and automotive lights.

[0004] In the existing technology, AlGaInP light-emitting diodes are all epitaxially fabricated on GaAs substrates. However, since GaAs substrates are light-absorbing and have low thermal conductivity (as low as 44 W / mK), the heat generated by AlGaInP light-emitting diodes cannot be conducted away in time, resulting in an increase in junction temperature and affecting internal quantum efficiency. This limits the application of this structure to low power ranges.

[0005] To improve the high-temperature operating characteristics and output power of AlGaInP light-emitting diodes, the industry generally uses substrate transfer technology to bond the P-side of the epitaxial wafer to a Si substrate with high thermal conductivity, and then removes the GaAs substrate using wet etching. Although this technology can significantly improve the luminous brightness of AlGaInP light-emitting diodes and can produce high-power devices, the process is complex, the product consistency is poor, and a large amount of As-containing chemical waste liquid is generated during the removal of the GaAs substrate, which pollutes the environment. Summary of the Invention

[0006] In view of this, to solve the above problems, the present invention provides an AlGaInP light-emitting diode based on a SiC substrate and a method for its fabrication, the technical solution of which is as follows:

[0007] A method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, the method comprising:

[0008] Provide a SiC substrate;

[0009] A partial low-temperature buffer layer is grown on one side of the SiC substrate at a first growth temperature, and the remaining portion of the low-temperature buffer layer is grown at a second growth temperature to form the target low-temperature buffer layer. The first growth temperature is lower than the second growth temperature.

[0010] A high-temperature buffer layer is grown on the side of the target low-temperature buffer layer that is away from the SiC substrate;

[0011] An N-type confinement layer, an active layer, and a P-type confinement layer are sequentially stacked on the side of the high-temperature buffer layer opposite to the SiC substrate.

[0012] Preferably, in the above-described method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, before growing the target low-temperature buffer layer, the fabrication method further includes:

[0013] The SiC substrate is subjected to heat treatment.

[0014] Preferably, in the above-described method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, the step of growing a portion of a low-temperature buffer layer on one side of the SiC substrate at a first growth temperature, and continuing to grow the remaining portion of the low-temperature buffer layer at a second growth temperature to form a target low-temperature buffer layer, wherein the first growth temperature is lower than the second growth temperature, includes:

[0015] At a first growth temperature of 500±40℃, a partial low-temperature buffer layer is grown on one side of the SiC substrate;

[0016] At a second growth temperature of 550±20℃, the remaining low-temperature buffer layer continues to grow to form the target low-temperature buffer layer.

[0017] Preferably, in the above-mentioned method for fabricating AlGaInP light-emitting diodes based on SiC substrates, the thickness of the target low-temperature buffer layer is 15nm-25nm.

[0018] Preferably, in the above method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, the target low-temperature buffer layer is a GaAs target low-temperature buffer layer;

[0019] The doping element is Si, and the doping concentration is 5E16cm⁻¹. -3 -2E19cm -3 .

[0020] Preferably, in the above-mentioned method for fabricating AlGaInP light-emitting diodes based on SiC substrates, the thickness of the high-temperature buffer layer is 0.3 μm-2 μm.

[0021] Preferably, in the above method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, the high-temperature buffer layer is a GaAs high-temperature buffer layer.

[0022] The doping element is Si, and the doping concentration is 5E16cm⁻¹. -3 -2E19cm -3 .

[0023] Preferably, in the above-described method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, before growing the N-type confinement layer, the fabrication method further includes:

[0024] An ohmic contact layer and a DBR reflector layer are sequentially stacked on the side of the high-temperature buffer layer opposite to the SiC substrate.

[0025] Preferably, in the above-described method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, after growing the P-type confinement layer, the fabrication method further includes:

[0026] A P-type window layer is grown on the side of the P-type confinement layer opposite to the SiC substrate;

[0027] A P-electrode is formed on the side of the P-type window layer away from the SiC substrate, and an N-electrode is formed on the side of the SiC substrate away from the target low-temperature buffer layer.

[0028] This application also provides an AlGaInP light-emitting diode based on a SiC substrate, the AlGaInP light-emitting diode comprising:

[0029] SiC substrate;

[0030] A target low-temperature buffer layer located on one side of the SiC substrate, the target low-temperature buffer layer comprising a portion of the low-temperature buffer layer grown on one side of the SiC substrate at a first growth temperature, and the remaining portion of the low-temperature buffer layer grown at a second growth temperature, wherein the first growth temperature is lower than the second growth temperature;

[0031] A high-temperature buffer layer located on the side of the target low-temperature buffer layer opposite to the SiC substrate;

[0032] An N-type confinement layer, an active layer, and a P-type confinement layer are stacked sequentially on one side of the high-temperature buffer layer.

[0033] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:

[0034] This invention provides a method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, comprising: providing a SiC substrate; growing a portion of a low-temperature buffer layer on one side of the SiC substrate at a first growth temperature, and continuing to grow the remaining portion of the low-temperature buffer layer at a second growth temperature to form a target low-temperature buffer layer, wherein the first growth temperature is lower than the second growth temperature; growing a high-temperature buffer layer on the side of the target low-temperature buffer layer opposite to the SiC substrate; and sequentially stacking an N-type confinement layer, an active layer, and a P-type confinement layer on the side of the high-temperature buffer layer opposite to the SiC substrate. This fabrication method grows an AlGaInP epitaxial layer on a SiC substrate with excellent thermal conductivity, thus eliminating the need for substrate transfer technology to transfer the AlGaInP epitaxial wafer to other substrates with high thermal conductivity, as is done in existing technologies. The process is relatively simple. Considering the lattice mismatch between SiC and AlGaInP, growing the target low-temperature buffer layer and the high-temperature buffer layer on the SiC substrate provides a better platform for subsequent epitaxial growth of AlGaInP. Furthermore, the target low-temperature buffer layer is grown using a two-step method with different temperatures, which can significantly reduce dislocation density. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0036] Figure 1 A schematic diagram of an AlGaInP light-emitting diode based on a SiC substrate is provided for an embodiment of the present invention;

[0037] Figure 2 A schematic flowchart illustrating a method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0038] Figure 3 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention.

[0039] Figure 4 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0040] Figure 5 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0041] Figure 6 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0042] Figure 7 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0043] Figure 8 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention;

[0044] Figure 9 This is a schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention. Detailed Implementation

[0045] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0046] Based on the content described in the background art, the present invention proposes an AlGaInP light-emitting diode based on a SiC substrate and a method for its fabrication. The thermal conductivity of SiC material is 4 times that of Si material and 8 times that of GaAs material, thereby further improving the high-current operating capability of the device.

[0047] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0048] refer to Figure 1 , Figure 1 A schematic diagram of an AlGaInP light-emitting diode based on a SiC substrate is provided for an embodiment of the present invention. (Refer to...) Figure 2 , Figure 2 This is a schematic flowchart illustrating a method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, according to an embodiment of the present invention. The method includes:

[0049] S101: Provides a SiC substrate.

[0050] Specifically, in this step, the thermal conductivity of the SiC substrate is 4 times that of the Si substrate and 8 times that of the GaAs substrate.

[0051] S102: A partial low-temperature buffer layer is grown on one side of the SiC substrate at a first growth temperature, and the remaining part of the low-temperature buffer layer is grown at a second growth temperature to form a target low-temperature buffer layer. The first growth temperature is lower than the second growth temperature.

[0052] S103: A high-temperature buffer layer is grown on the side of the target low-temperature buffer layer away from the SiC substrate.

[0053] S104: An N-type confinement layer, an active layer, and a P-type confinement layer are sequentially stacked on the side of the high-temperature buffer layer away from the SiC substrate.

[0054] Specifically, in this embodiment of the invention, the preparation method grows an AlGaInP epitaxial layer on a SiC substrate with excellent thermal conductivity. Therefore, it is not necessary to transfer the AlGaInP epitaxial wafer to other substrates with high thermal conductivity through substrate transfer technology as in the prior art. The process is relatively simple. Considering the problem of lattice mismatch between SiC and AlGaInP, a target low-temperature buffer layer and a high-temperature buffer layer are grown on the SiC substrate to provide a better platform for the subsequent epitaxial growth of AlGaInP. Furthermore, the target low-temperature buffer layer adopts a two-step growth method with different temperatures, which can significantly reduce the dislocation density.

[0055] Optionally, in another embodiment of the invention, reference is made to... Figure 3 , Figure 3 This is a schematic flowchart of another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided by an embodiment of the present invention. Before growing the target low-temperature buffer layer, the fabrication method further includes:

[0056] S105: Perform heat treatment on the SiC substrate.

[0057] Specifically, in this step, the SiC substrate is placed in the growth chamber of the MOVCD device and heated to 700±50℃ in an H2 atmosphere for heat treatment, which takes 5 to 20 minutes.

[0058] Optionally, in another embodiment of the invention, reference is made to... Figure 4 , Figure 4 This is a schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention.

[0059] One possible implementation of step S102, which involves "growing a portion of the low-temperature buffer layer on one side of the SiC substrate at a first growth temperature, and continuing to grow the remaining portion of the low-temperature buffer layer at a second growth temperature to form the target low-temperature buffer layer, wherein the first growth temperature is lower than the second growth temperature," is as follows:

[0060] S1021: At a first growth temperature of 500±40℃, a partial low-temperature buffer layer is grown on one side of the SiC substrate.

[0061] S1022: Increase the temperature to a second growth temperature of 550±20℃, and continue to grow the remaining part of the low-temperature buffer layer to form the target low-temperature buffer layer.

[0062] Specifically, in this embodiment, the thickness of the target low-temperature buffer layer is 15nm-25nm, for example, the thickness of the target low-temperature buffer layer is 15nm, 17nm, 19.5nm, or 25nm, etc., and the target low-temperature buffer layer is a GaAs target low-temperature buffer layer; the doping element of the target low-temperature buffer layer is Si element with n-type doping, and the doping concentration is 5E16cm. -3 -2E19cm -3 .

[0063] After the SiC substrate is heat-treated, the temperature is adjusted to a first growth temperature of 500±40℃, and TMGa and AsH3 are introduced to grow a portion of the low-temperature buffer layer on one side of the SiC substrate. Then, the temperature is adjusted to a second growth temperature of 550±20℃, and TMGa and AsH3 are introduced to continue growing the remaining portion of the low-temperature buffer layer to form the target low-temperature buffer layer.

[0064] It should be noted that the invention is based on a two-step growth technique for epitaxial GaN growth on a sapphire substrate, but it differs from GaN because GaAs material properties are different from GaN. GaAs has much better wettability with SiC substrates, which means that two-dimensional growth is easily achieved at a low temperature of 500±40℃. To overcome this problem, a sub-low temperature growth method is introduced in the low-temperature buffer layer growth process in this application embodiment. That is, a portion of the low-temperature buffer layer is grown at a first growth temperature of 500±40℃, and then the temperature is raised to a sub-low temperature range to grow the remaining portion of the low-temperature buffer layer. This sub-low temperature range can be 550±20℃. By introducing the sub-low temperature, the direct two-dimensional growth of GaAs and SiC substrate at low temperatures can be broken. At a temperature slightly higher than that of low-temperature GaAs, Ga atoms can gain greater kinetic energy, making it easier to form three-dimensional island growth. Then, during the subsequent high-temperature GaAs growth, the two-dimensional growth merges, forming a flat surface and significantly reducing defect density.

[0065] After the target low-temperature buffer layer is grown, the temperature is adjusted to 720±40℃, and then TMGa and AsH3 are introduced to grow a high-temperature buffer layer on the side of the target low-temperature buffer layer away from the SiC substrate.

[0066] The thickness of the high-temperature buffer layer is 0.3μm-2μm, for example, the thickness of the high-temperature buffer layer is 0.3μm, 1μm, 1.5μm, or 2μm, etc. The doping element of the high-temperature buffer layer is Si element with n-type doping, and the doping concentration is 5E16cm. -3 -2E19cm -3 .

[0067] Optionally, in another embodiment of the invention, reference is made to... Figure 5 , Figure 5 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided by an embodiment of the present invention, further includes the following steps before growing the N-type confinement layer:

[0068] S106: An ohmic contact layer and a DBR reflector layer are sequentially stacked on the side of the high-temperature buffer layer away from the SiC substrate.

[0069] Specifically, in this embodiment, the ohmic contact layer is an N-type gallium arsenide ohmic contact layer. The ohmic contact layer is grown on the side of the high-temperature buffer layer away from the SiC substrate by introducing TMGa and AsH3 at a reaction chamber temperature of 720±40℃. The thickness of the ohmic contact layer is 0.2μm-0.6μm, for example, 0.2μm, 0.4μm, 0.5μm, or 0.6μm. The doping element of the ohmic contact layer is Si with n-type doping at a doping concentration of 1E18cm⁻¹. -3 -4E18cm -3 .

[0070] After the ohmic contact layer is grown, a DBR mirror layer is grown on the side of the ohmic contact layer away from the SiC substrate at a reaction chamber temperature of 720±40℃. The DBR mirror layer is grown using TMGa, TMAl, Si2H6, and AsH3 as reactants to grow Al. x Ga 1-x As / Al y Ga 1-y As DBR reflector layer, or grown using TMGa, TMAl, TMIn, Si2H6 and PH3 as reactants (Al x Ga 1-x ) 0.5 In 0.5 P / (Al y Ga 1-y ) 0.5 In 0.5 P is a DBR reflector layer, where x≠y.

[0071] Optionally, in another embodiment of the invention, reference is made to... Figure 6 , Figure 6 This is a schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided in an embodiment of the present invention.

[0072] One possible implementation of step S104, which involves "sequentially stacking an N-type confinement layer, an active layer, and a P-type confinement layer on the side of the high-temperature buffer layer facing away from the SiC substrate," is as follows:

[0073] S1041: An N-type confinement layer is grown on the side of the DBR mirror layer opposite to the SiC substrate.

[0074] Specifically, in this step, TMGa, TMAl, TMIn, and PH3 are introduced into the reaction chamber at a temperature of 720±40℃ to grow on the side of the DBR mirror layer facing away from the SiC substrate (Al). x Ga 1-x ) 0.5 In 0.5 An N-type confinement layer of P, where 0.6 < x < 1, has a thickness of 0.3 μm to 1 μm, for example, a thickness of 0.3 μm, 0.5 μm, 0.8 μm, or 1 μm. The doping element of the N-type confinement layer is Si with n-type doping at a concentration of 0.7E18 cm⁻¹. -3 -4E18cm -3 .

[0075] S1042: An active layer is grown on the side of the N-type confinement layer opposite to the SiC substrate.

[0076] Specifically, in this step, TMGa, TMAl, TMIn, and PH3 are introduced into the reaction chamber at a temperature of 720±40℃ to grow the traps and barriers, which are respectively (Al... x Ga 1-x ) 0.5 In 0.5 P(0≤x≤0.3), (Al) x Ga 1-x ) 0.5 In 0.5 The active layer is P(0.4≤x≤0.6), where the thickness of the well and barrier monolayer is 5nm-20nm, for example, the thickness can be 5nm or 8.5nm or 12nm or 20nm, etc., and the number of periods is 15-40 pairs, which is unintentionally doped.

[0077] S1043: A P-type confinement layer is grown on the side of the active layer opposite to the SiC substrate.

[0078] Specifically, in this step, TMGa, TMAl, TMIn, and PH3 are introduced into the active layer on the side facing away from the SiC substrate at a reaction chamber temperature of 720±40℃ to grow (Al... x Ga 1-x ) 0.5 In 0.5 A p-type confinement layer of P, wherein 0.6 ≤ x ≤ 1, has a thickness of 0.3 μm-1 μm, for example, a thickness of 0.3 μm, 0.5 μm, 0.8 μm, or 1 μm, etc., and the doping element of the p-type confinement layer is Mg element performing p-type doping, with a doping concentration of 0.5E18cm. -3 -2E18cm -3 .

[0079] Optionally, in another embodiment of the invention, reference is made to... Figure 7 , Figure 7 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided by an embodiment of the present invention, further includes the following steps after the N-type confinement layer is grown and before the active layer is grown:

[0080] S107: An N-type space layer is grown on the side of the N-type confinement layer opposite to the SiC substrate.

[0081] Specifically, in this step, TMGa, TMAl, TMIn, and PH3 are introduced into the N-type confinement layer on the side facing away from the SiC substrate at a reaction chamber temperature of 720±40℃ to grow (Al). x Ga 1-x ) 0.5 In 0.5 The N-type space layer of P, where 0.6 < x < 1, has a thickness of 0.2 μm to 0.5 μm, for example, the thickness of the N-type space layer is 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., and is not intentionally doped.

[0082] Optionally, in another embodiment of the invention, reference is made to... Figure 8 , Figure 8 A schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided by an embodiment of the present invention, further includes the following steps after the growth of the active layer and before the growth of the P-type confinement layer:

[0083] S108: A P-type space layer is grown on the side of the active layer away from the SiC substrate.

[0084] Specifically, in this step, TMGa, TMAl, TMIn, and PH3 are introduced into the active layer on the side facing away from the SiC substrate at a reaction chamber temperature of 720±40℃ to grow (Al... x Ga 1-x ) 0.5 In 0.5 The P-type space layer has an N-type space layer, where 0.6 ≤ x ≤ 1, and the thickness of the P-type space layer is 0.2 μm-0.5 μm, for example, the thickness of the P-type space layer is 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., and it is not intentionally doped.

[0085] Optionally, in another embodiment of the invention, reference is made to... Figure 9 , Figure 9 This is a schematic flowchart illustrating another method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, provided by an embodiment of the present invention. After growing the P-type confinement layer, the fabrication method further includes:

[0086] S109: A P-type window layer is grown on the side of the P-type confinement layer opposite to the SiC substrate.

[0087] S110: A P electrode is formed on the side of the P-type window layer away from the SiC substrate, and an N electrode is formed on the side of the SiC substrate away from the target low-temperature buffer layer.

[0088] Specifically, in this embodiment of the invention, TMGa and PH3 are introduced into the reaction chamber at a temperature of 760±50℃ to grow a GaP P-type window layer on the side of the P-type confinement layer facing away from the SiC substrate, serving as a P-type current spreading layer. The thickness of the P-type window layer is 0.5μm-5μm, for example, 0.5μm, 1μm, 3.5μm, or 5μm. The doping element of the P-type window layer is Mg element for p-type doping, with a doping concentration greater than 1E18cm. -3 .

[0089] Then, P and N electrodes are grown at the corresponding positions.

[0090] Optionally, based on the above embodiments of the present invention, another embodiment of the present invention also provides an AlGaInP light-emitting diode based on a SiC substrate, such as... Figure 1 As shown, the AlGaInP light-emitting diode based on a SiC substrate includes:

[0091] SiC substrate; a target low-temperature buffer layer located on one side of the SiC substrate, the target low-temperature buffer layer comprising a portion of the low-temperature buffer layer grown on one side of the SiC substrate at a first growth temperature, and the remaining portion of the low-temperature buffer layer grown at a second growth temperature, wherein the first growth temperature is lower than the second growth temperature.

[0092] A high-temperature buffer layer located on the side of the target low-temperature buffer layer opposite to the SiC substrate.

[0093] An N-type confinement layer, an active layer, and a P-type confinement layer are stacked sequentially on one side of the high-temperature buffer layer.

[0094] like Figure 1 As shown, the SiC-based AlGaInP light-emitting diode further includes: an ohmic contact layer, a DBR reflector layer, a P-type window layer, a P-electrode, and an N-electrode. Optionally, the SiC-based AlGaInP light-emitting diode may also include: an N-type space layer and a P-type space layer.

[0095] The present invention provides a detailed description of an AlGaInP light-emitting diode based on a SiC substrate and its fabrication method. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

[0096] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0097] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that elements inherent to a process, method, article, or apparatus that comprises a list of elements, or elements inherent to such processes, methods, articles, or apparatus, are also included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0098] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for fabricating an AlGaInP light-emitting diode based on a SiC substrate, characterized in that, The preparation method includes: Provide a SiC substrate; A partial low-temperature buffer layer is grown on one side of the SiC substrate at a first growth temperature, and the remaining portion of the low-temperature buffer layer is grown at a second growth temperature to form the target low-temperature buffer layer. The first growth temperature is lower than the second growth temperature. Specifically, at a first growth temperature of 500±40℃, a partial low-temperature buffer layer is grown on one side of the SiC substrate; at a second growth temperature of 550±20℃, the remaining portion of the low-temperature buffer layer is grown to form the target low-temperature buffer layer. The target low-temperature buffer layer is a GaAs target low-temperature buffer layer. A high-temperature buffer layer is grown on the side of the target low-temperature buffer layer that is away from the SiC substrate; An N-type confinement layer, an active layer, and a P-type confinement layer are sequentially stacked on the side of the high-temperature buffer layer opposite to the SiC substrate.

2. The preparation method according to claim 1, characterized in that, Before growing the target low-temperature buffer layer, the preparation method further includes: The SiC substrate is subjected to heat treatment.

3. The preparation method according to claim 1, characterized in that, The thickness of the target low-temperature buffer layer is 15nm-25nm.

4. The preparation method according to claim 1, characterized in that, The target low-temperature buffer layer is doped with Si, and the doping concentration is 5E16cm⁻¹. -3 -2 E19cm -3 .

5. The preparation method according to claim 1, characterized in that, The thickness of the high-temperature buffer layer is 0.3μm-2μm.

6. The preparation method according to claim 1, characterized in that, The high-temperature buffer layer is a GaAs high-temperature buffer layer; The doping element is Si, and the doping concentration is 5E16cm⁻¹. -3 -2E19cm -3 .

7. The preparation method according to claim 1, characterized in that, Before growing the N-type confinement layer, the preparation method further includes: An ohmic contact layer and a DBR reflector layer are sequentially stacked on the side of the high-temperature buffer layer opposite to the SiC substrate.

8. The preparation method according to claim 1, characterized in that, After the P-type confinement layer has been grown, the preparation method further includes: A P-type window layer is grown on the side of the P-type confinement layer opposite to the SiC substrate; A P-electrode is formed on the side of the P-type window layer away from the SiC substrate, and an N-electrode is formed on the side of the SiC substrate away from the target low-temperature buffer layer.

9. An AlGaInP light-emitting diode based on a SiC substrate, characterized in that, The AlGaInP light-emitting diode includes: SiC substrate; A target low-temperature buffer layer is located on one side of the SiC substrate. The target low-temperature buffer layer includes a portion of the low-temperature buffer layer grown on one side of the SiC substrate at a first growth temperature, and the remaining portion of the low-temperature buffer layer grown at a second growth temperature. The first growth temperature is lower than the second growth temperature. Specifically, the portion of the low-temperature buffer layer is grown on one side of the SiC substrate at a first growth temperature of 500±40℃; the remaining portion of the low-temperature buffer layer is grown at a second growth temperature of 550±20℃ to form the target low-temperature buffer layer. The target low-temperature buffer layer is a GaAs target low-temperature buffer layer. A high-temperature buffer layer located on the side of the target low-temperature buffer layer opposite to the SiC substrate; An N-type confinement layer, an active layer, and a P-type confinement layer are stacked sequentially on one side of the high-temperature buffer layer.

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