Plant growth promoting method and system based on organosilicon, and electronic device

Abstract

The application provides a plant growth promoting method and system based on organic silicon, and an electronic device, wherein a fluorescent powder and an organic silicon glue are used to make an LED growth promoting light source; light intensity data and environmental temperature data of an environment where plants are located are collected by using a light intensity sensor and a temperature sensor according to a first monitoring period; it is judged whether the environmental temperature data is greater than or equal to a first preset threshold value and whether the light intensity data is greater than or equal to a second preset threshold value; and a control signal about an output duty cycle of an IGBT transistor in the LED growth promoting light source and / or an output duty cycle of an IGBT transistor in a heating module is output according to a judgment result. The frequency conversion control of the heating module and the LED growth promoting light source is realized, the dynamic complementary adjustment of the temperature and the light intensity of the environment where the plants are located is realized, the energy is greatly saved, the stability of the temperature and the light intensity of the environment where the plants are located is improved, and the consistency of the plant growth is improved.

Description

Technical Field

[0001] This invention relates to the field of plant growth promotion technology, specifically to a plant growth promotion method, system, and electronic equipment based on organosilicon. Background Technology

[0002] Light is a crucial environmental factor for crop growth and development. Light quality (wavelength composition) and light intensity have a significant impact on crop morphology, photosynthesis, metabolic regulation, and quality. January to March each year is the season with the lowest temperatures and light intensities, the fewest hours of sunshine, and frequent cold waves in most regions. These unfavorable climatic conditions mean that despite the use of greenhouses for centralized seedling cultivation, insufficient light results in weak plants with poor resilience and prolonged recovery periods after transplanting, significantly impacting plant growth, yield, and quality. Therefore, low temperatures and insufficient light duration are among the main reasons why it is difficult to improve the quality of tobacco plants in various regions.

[0003] Existing technology reports an LED plant grow light composed of a chip-plus-chip configuration for supplementing lighting in vegetable and flower greenhouses and hothouses. Its advantages include: rich wavelength types, high luminous efficiency, low heat load, long lifespan, energy saving, environmental friendliness, and low operating costs. However, the chip-plus-chip configuration has two problems: First, the spectrum obtained by combining blue and red light chips is a line spectrum, which differs significantly from sunlight and is far removed from the plant's original growth environment. Second, red light chips are 2-3 times more expensive than blue light chips, and the dual-chip packaging itself increases the difficulty of the manufacturing process, indirectly increasing production costs. Therefore, this restricts the application and promotion of chip-plus-chip LED plant lighting devices. Furthermore, in existing technologies, temperature and light intensity are constantly changing throughout the day. When the temperature from the supplementary heating device and natural temperature are superimposed, resulting in excessively high temperatures, or when the intensity of the supplementary light and natural light are superimposed, resulting in excessively high light intensity, it may cause energy waste and fluctuations in the plant's environment, affecting optimal plant growth.

[0004] Therefore, the existing technology still needs further development. Summary of the Invention

[0005] The purpose of this invention is to overcome the above-mentioned technical deficiencies and provide a plant growth promotion method based on organosilicon to solve the problems existing in the prior art.

[0006] To achieve the above-mentioned technical objectives, according to a first aspect of the present invention, the present invention provides a plant growth promotion method based on organosilicon, comprising:

[0007] S100: An LED growth-promoting light source is made using phosphor and silicone to provide light for plants. A heating module is used to regulate the temperature of the plant's environment. The light intensity sensor and temperature sensor collect light intensity data and ambient temperature data of the plant's environment according to the first monitoring cycle.

[0008] S200: Determine whether the ambient temperature data is greater than or equal to the first preset threshold, and determine whether the light intensity data is less than the second preset threshold;

[0009] S300: Based on the judgment result, output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0010] Specifically, S300 includes:

[0011] If the temperature data is greater than or equal to the first preset threshold and the light intensity data is less than the second preset threshold, a control signal is output to reduce the output duty cycle of the IGBT switching transistor in the heating module according to the first preset ratio. The light intensity data and ambient temperature data of the plant's environment are collected in the second monitoring cycle. It is determined whether the light intensity data of the next time is greater than or equal to the second preset threshold. Based on the determination result, a control signal is output to adjust the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0012] Specifically, S300 further includes:

[0013] If the next light intensity data is greater than or equal to the second preset threshold, return to step S100.

[0014] Specifically, S300 further includes:

[0015] If the next light intensity data is less than the second preset threshold, a control signal is output regarding increasing the output duty cycle of the IGBT transistor in the LED growth-promoting light source according to the first preset ratio. The third ambient temperature data is collected according to the second monitoring cycle, and it is determined whether the third ambient temperature data is greater than or equal to the first preset threshold. Based on the determination result, a control signal is output regarding adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0016] Specifically, S300 further includes:

[0017] If the third ambient temperature data is greater than or equal to the first preset threshold, return to step S100.

[0018] Specifically, S300 further includes:

[0019] If the third ambient temperature data is less than the first preset threshold, a control signal is output regarding increasing the output duty cycle of the IGBT transistor in the heating module according to the second preset ratio, and the process returns to step S100.

[0020] Specifically, S100 further includes:

[0021] The total time data in a day when the light intensity is greater than or equal to the second preset threshold is calculated using a light intensity sensor and the first monitoring cycle. It is then determined whether the total time data is greater than or equal to the third preset threshold. If so, a control signal is output to control the IGBT transistor in the LED growth light source to turn off.

[0022] Specifically, S300 further includes:

[0023] If the light intensity data is less than or equal to the second preset threshold, determine whether the light intensity data is less than or equal to the fourth preset threshold. If so, output a control signal related to increasing the output duty cycle of the IGBT transistor in the LED growth light source according to the first preset ratio.

[0024] According to a second aspect of the present invention, a plant growth promoting system based on organosilicon is provided, comprising:

[0025] LED growth-promoting light sources are used to provide light for plants;

[0026] The heating module is used to regulate the temperature of the environment in which the plants are located;

[0027] The control module is used to collect light intensity data and ambient temperature data of the plant's environment according to a first monitoring cycle using a light intensity sensor and a temperature sensor; or to determine whether the ambient temperature data is greater than or equal to a first preset threshold and whether the light intensity data is less than a second preset threshold; or to control the execution module to output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module based on the judgment results.

[0028] The execution module is used to output control signals regarding the adjustment of the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0029] According to a third aspect of the present invention, an electronic device is provided, comprising: a memory; and a processor, wherein the memory stores computer-readable instructions, which, when executed by the processor, implement the plant growth promotion method based on organosilicon according to any one of claims 1 to 8.

[0030] Beneficial effects:

[0031] This invention utilizes phosphors and silicone to create an LED growth-promoting light source, providing a light source for plants. A heating module regulates the temperature of the plant's environment. A light intensity sensor and a temperature sensor collect light intensity and ambient temperature data of the plant's environment according to a first monitoring cycle. The system determines whether the ambient temperature data is greater than or equal to a first preset threshold and whether the light intensity data is greater than or equal to a second preset threshold. Based on the determination results, control signals are output to adjust the output duty cycle of the IGBT transistors in the LED growth-promoting light source and / or the IGBT transistors in the heating module. This achieves frequency conversion control of the heating module and the LED growth-promoting light source. Heating accelerates molecular motion, increases the probability of intermolecular collisions, and increases non-radiative transitions, thereby reducing fluorescence efficiency. This achieves dynamic complementary regulation of the temperature and light intensity of the plant's environment, significantly saving energy and improving the stability of the temperature and light intensity of the plant's environment, thus improving the uniformity of plant growth. Attached Figure Description

[0032] Figure 1 This is a flowchart of a plant growth promotion method based on organosilicon provided in a specific embodiment of the present invention;

[0033] Figure 2 This is a structural diagram of a plant growth promotion method based on organosilicon provided in a specific embodiment of the present invention. Detailed Implementation

[0034] To enable those skilled in the art to better understand the technical solutions of the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Based on the embodiments in this application, other similar embodiments obtained by those skilled in the art without creative effort should all fall within the scope of protection of this application. Furthermore, directional terms mentioned in the following embodiments, such as "up," "down," "left," and "right," are only for reference to the directions in the accompanying drawings; therefore, the directional terms used are for illustrative purposes and not for limiting the invention.

[0035] The present invention will be further described below with reference to the accompanying drawings and preferred embodiments.

[0036] Please see Figure 1 This invention provides a plant growth promotion method based on organosilicon, comprising:

[0037] S100: An LED growth-promoting light source is made using phosphors and silicone to provide light for plants. A heating module is used to regulate the temperature of the plant's environment. The light intensity sensor and temperature sensor collect light intensity data and ambient temperature data of the plant's environment according to the first monitoring cycle.

[0038] It should be noted here that step S100 includes the following:

[0039] The system includes a first preset threshold, a second preset threshold, a third preset threshold, a fourth preset threshold, a first monitoring period, a second monitoring period, a first preset ratio, and a second preset ratio, wherein the fourth preset threshold is less than the second preset threshold, and the second monitoring period is greater than the first monitoring period.

[0040] It should be noted here that the LED growth-promoting light source made using phosphors and silicone includes:

[0041] This invention relates to an LED light-emitting device that utilizes red phosphor and a blue LED chip for co-encapsulation, providing a light source. The phosphor used is an aluminate matrix, vanadate matrix, or nitride matrix material, with an excitation spectrum range of 440-470 nm and an emission spectrum range of 600-660 nm. The phosphor used in this invention has a main emission peak between 630-660 nm and a full width at half maximum (FWHM) between 60-120 nm. When assembling the phosphor and blue LED chip into a light-emitting device, the mass ratio of phosphor to silicone is 1:4-20. In the fabricated LED light source, after combining the red phosphor and blue LED chip, the integrated area of ​​the red peak of the red phosphor is 0.5-2 times that of the integrated area of ​​the blue peak of the blue LED chip. The red-to-blue ratio of the emitted spectrum of the fabricated LED light source is between 1:2 and 1:10.

[0042] When plants are being cultivated, the light intensity, expressed as photonic efficiency, is controlled between 80-150 μmol / m² / s, with a photoperiod of 12 h / d. The phosphor of this invention is used in conjunction with a 440-460nm blue light chip to assemble a light-emitting device. The resulting light source can be assembled into one of three types: a flat panel lamp, a straight tube lamp, or a UFO lamp, and can be used for supplemental lighting in greenhouse plant cultivation or for indoor plant cultivation, with a particular suitability for the latter.

[0043] In this embodiment, a nitride red phosphor Sr2Si5N8:Eu is prepared under high temperature and high pressure conditions and a temperature of 1700℃. This phosphor has very strong excitation at 460nm and very strong emission spectrum at 600nm. The phosphor is uniformly mixed with organosilicon at a mass ratio of 1:10 and assembled into an LED growth-promoting light source. Preferably, it can be assembled into an LED flat panel lamp. The assembly bracket is made of iron material, with a length of 69cm, a width of 23cm, and a layer spacing of 17cm, for placing the floating plate. Each layer hangs one set of the phosphor-excited LED plant growth flat panel lamp of this invention, which is applied to indoor plant seedling cultivation. The room temperature is 28℃, which is the first preset threshold, preferably 28 degrees. This first preset threshold of 28 degrees was determined by the technical personnel of this application through numerous experiments, and it can provide good heat for plant growth. The light intensity is expressed as photon efficiency and is controlled between 80-150 μmol / m2 / s, which is the second preset threshold of 150 μmol / m2 / s. The fourth preset threshold is preferably 40 μmol / m2 / s. The second preset threshold of 150 μmol / m2 / s and the fourth preset threshold of 40 μmol / m2 / s are controlled between 80-150 μmol / m2 / s, which was determined by the technical personnel of this application through numerous experiments, and it can provide sufficient light source for plant production. The light cycle is 12h / d, which is the third preset threshold of 12h. This third preset threshold of 12h was determined by the technical personnel of this application through numerous experiments, and it can provide good light time for plant growth. The time (in days) required for the emergence, cross-shaped, and mature seedling stages of tobacco leaves was statistically analyzed, and the agronomic traits (seedling color, seedling height, stem height, stem circumference), physical indicators (root dry weight, stem dry weight, width ratio, single leaf weight), and chemical indicators (root activity, chlorophyll, carotenoids, nicotine, etc.) of the mature seedling stage were observed and tested.

[0044] Specifically, S100 further includes:

[0045] The total time data in a day when the light intensity is greater than or equal to the second preset threshold is calculated using a light intensity sensor and the first monitoring cycle. It is then determined whether the total time data is greater than or equal to the third preset threshold. If so, a control signal is output to control the IGBT transistor in the LED growth light source to turn off.

[0046] It should be noted that when the total time data is greater than or equal to the third preset threshold, it proves that the light required by the plant for the day is sufficient. At this time, the present invention controls the LED growth-promoting light source to turn off by outputting a control signal related to the IGBT transistor in the LED growth-promoting light source, thus saving energy and requiring no human intervention. This greatly improves the intelligence and automation of the present invention and reduces the workload of the staff.

[0047] S200: Determine whether the ambient temperature data is greater than or equal to the first preset threshold, and determine whether the light intensity data is less than the second preset threshold.

[0048] S300: Based on the judgment result, output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0049] Specifically, S300 includes:

[0050] If the temperature data is greater than or equal to the first preset threshold and the light intensity data is less than the second preset threshold, a control signal is output to reduce the output duty cycle of the IGBT switching transistor in the heating module according to the first preset ratio. The light intensity data and ambient temperature data of the plant's environment are collected in the second monitoring cycle. It is determined whether the light intensity data of the next time is greater than or equal to the second preset threshold. Based on the determination result, a control signal is output to adjust the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0051] It should be noted that when the temperature data is greater than or equal to the first preset threshold and the light intensity data is less than the second preset threshold, it indicates that the ambient temperature is high and the light intensity is low. In this case, the present invention utilizes heating to accelerate molecular motion, increase the probability of intermolecular collisions, and increase non-radiative transitions, thereby reducing fluorescence efficiency. By outputting a control signal that reduces the output duty cycle of the IGBT switch of the heating module according to the first preset ratio, the ambient temperature of the plant is appropriately reduced, thereby improving fluorescence efficiency. This achieves the utilization of ambient heat, reducing system energy consumption and saving energy to a large extent, which aligns with the technological development concept of energy conservation and emission reduction. It also achieves dynamic complementary regulation of the temperature and light intensity of the plant's environment, significantly saving energy and improving the stability of the temperature and light intensity of the plant's environment, thus improving the uniformity of plant growth. Preferably, the first preset ratio is 3%. Setting the first preset ratio to 3% was determined by the inventors through extensive experiments and can effectively achieve dynamic complementary regulation of the temperature and light intensity of the plant's environment.

[0052] This invention also collects light intensity and ambient temperature data of the plant's environment according to a second monitoring cycle, determines whether the next light intensity data is greater than or equal to a second preset threshold, and determines whether a decrease in ambient temperature will raise the light intensity data to a range suitable for plant production. Based on the determination results, it outputs control signals regarding adjusting the output duty cycle of the IGBT transistors in the LED growth-promoting light source and / or the IGBT transistors in the heating module. This further improves the intelligence and usability of the invention.

[0053] Specifically, S300 further includes:

[0054] If the next light intensity data is greater than or equal to the second preset threshold, return to step S100.

[0055] It should be noted that if the next light intensity data is greater than or equal to the second preset threshold, it proves that the decrease in ambient temperature has raised the light intensity data to a range suitable for plant production. The process then returns to step S100 to continue routine monitoring, which further improves the intelligence and automation of the invention, further enhances the consistency of plant growth and the stability of the production environment, and further expands the application scenarios of the invention.

[0056] Specifically, S300 further includes:

[0057] If the next light intensity data is less than the second preset threshold, a control signal is output regarding increasing the output duty cycle of the IGBT transistor in the LED growth-promoting light source according to the first preset ratio. The third ambient temperature data is collected according to the second monitoring cycle, and it is determined whether the third ambient temperature data is greater than or equal to the first preset threshold. Based on the determination result, a control signal is output regarding adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0058] It should be noted that if the next light intensity data is less than the second preset threshold, it indicates that the decrease in ambient temperature has not raised the light intensity data to a suitable range for plant production. In this case, the output power of the LED growth-promoting light source is increased by increasing the control signal of the output duty cycle of the IGBT transistor in the LED growth-promoting light source according to the first preset ratio, thereby increasing the light intensity of the plant's environment. A third ambient temperature data is collected according to the second monitoring cycle to determine whether the third ambient temperature data is greater than or equal to the first preset threshold, and whether the ambient temperature has been reduced below the first preset threshold by the above steps. If the third ambient temperature data is greater than or equal to the first preset threshold, the process returns to step S100, indicating that the ambient temperature has not been reduced below the first preset threshold by the above steps. In this case, there is no need to increase the ambient temperature, and the process returns to step S100 for routine monitoring.

[0059] If the third ambient temperature data is less than the first preset threshold, it proves that the ambient temperature has been reduced below the first preset threshold by the above steps, and it is necessary to increase the ambient temperature to improve the quality of plant production. At this time, the present invention outputs a control signal regarding increasing the output duty cycle of the IGBT transistor in the heating module according to a second preset ratio, thereby increasing the output power of the heating module, raising the ambient temperature, and returning to step S100 for cyclic adjustment. This greatly improves the stability and consistency of the plant growth environment temperature, reduces the impact of fluctuations in the plant growth environment temperature caused by natural temperature changes on plant production, and significantly improves the consistency of plant growth. No complex algorithm modeling is required, application and maintenance costs are low, and the application scenarios of the present invention are greatly expanded.

[0060] Specifically, S300 further includes:

[0061] If the third ambient temperature data is greater than or equal to the first preset threshold, return to step S100.

[0062] Specifically, S300 further includes:

[0063] If the third ambient temperature data is less than the first preset threshold, a control signal is output regarding increasing the output duty cycle of the IGBT transistor in the heating module according to the second preset ratio, and the process returns to step S100.

[0064] Specifically, S300 further includes:

[0065] If the light intensity data is less than or equal to the second preset threshold, determine whether the light intensity data is less than or equal to the fourth preset threshold. If so, output a control signal related to increasing the output duty cycle of the IGBT transistor in the LED growth light source according to the first preset ratio.

[0066] It's important to note the trade-offs here. If the light intensity data is less than or equal to the fourth preset threshold, it indicates that the light intensity is too low. Adjusting the temperature cannot raise the light intensity to between 80-150 μmol / m² / s. In this case, the present invention outputs a control signal that increases the output duty cycle of the IGBT transistor in the LED growth-promoting light source according to a first preset ratio. This increases the output power of the LED growth-promoting light source, thereby increasing the light intensity of the plant's environment. This further enhances the intelligence of the invention, improves the stability and consistency of the plant growth environment, and reduces the impact of fluctuations in light intensity caused by changes in natural light on plant production, significantly improving the consistency of plant growth. No complex algorithm modeling is required, resulting in low application and maintenance costs, which greatly expands the application scenarios of the present invention.

[0067] It should be noted that this invention utilizes phosphors and silicone to create an LED growth-promoting light source, providing light to plants. A heating module regulates the temperature of the plant's environment. A light intensity sensor and a temperature sensor collect light intensity and ambient temperature data of the plant's environment according to a first monitoring cycle; determine whether the ambient temperature data is greater than or equal to a first preset threshold, and whether the light intensity data is greater than or equal to a second preset threshold; based on the determination results, output control signals are generated to adjust the output duty cycle of the IGBT transistors in the LED growth-promoting light source and / or the IGBT transistors in the heating module. This achieves frequency conversion control of the heating module and the LED growth-promoting light source. Heating accelerates molecular motion, increases the probability of intermolecular collisions, and increases non-radiative transitions, thereby reducing fluorescence efficiency. This achieves dynamic complementary regulation of the temperature and light intensity of the plant's environment, significantly saving energy and improving the stability of the temperature and light intensity of the plant's environment, thus improving the uniformity of plant growth.

[0068] Please see Figure 2 The present invention provides another embodiment, which provides a plant growth promotion system based on organosilicon, the system comprising:

[0069] LED growth-promoting light source 100 is used to provide light for plants;

[0070] Heating module 200 is used to regulate the temperature of the environment in which the plant is located;

[0071] The control module 300 is used to collect light intensity data and ambient temperature data of the plant's environment according to a first monitoring cycle using the light intensity sensor 400 and the temperature sensor 500; or to determine whether the ambient temperature data is greater than or equal to a first preset threshold and whether the light intensity data is less than a second preset threshold; or to control the execution module 600 to output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source 100 and / or the output duty cycle of the IGBT transistor in the heating module 200, based on the judgment results.

[0072] The execution module 600 is used to output control signals regarding the adjustment of the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module.

[0073] It should be noted that the light intensity sensor described in this invention is a light intensity sensor.

[0074] In a preferred embodiment, this application also provides an electronic device, the electronic device comprising:

[0075] The computer device includes a memory and a processor, wherein the memory stores computer-readable instructions that, when executed by the processor, implement the described organosilicon-based plant growth promotion method. The computer device can be broadly categorized as a server, terminal, or any other electronic device with the necessary computing and / or processing capabilities. In one embodiment, the computer device may include a processor, memory, network interface, communication interface, etc., connected via a system bus. The processor of the computer device can be used to provide the necessary computing, processing, and / or control capabilities. The memory of the computer device may include a non-volatile storage medium and internal memory. The non-volatile storage medium may store an operating system, computer programs, etc. The internal memory can provide an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The network interface and communication interface of the computer device can be used to connect and communicate with external devices via a network. When the computer program is executed by the processor, it performs the steps of the method of the present invention.

[0076] This invention can be implemented as a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, causes the steps of the methods of embodiments of the invention to be performed. In one embodiment, the computer program is distributed across multiple network-coupled computer devices or processors, such that the computer program is stored, accessed, and executed in a distributed manner by one or more computer devices or processors. A single method step / operation, or two or more method steps / operations, may be executed by a single computer device or processor or by two or more computer devices or processors. One or more method steps / operations may be executed by one or more computer devices or processors, and one or more other method steps / operations may be executed by one or more other computer devices or processors. One or more computer devices or processors may execute a single method step / operation, or execute two or more method steps / operations.

[0077] Those skilled in the art will understand that the method steps of this invention can be performed by a computer program instructing related hardware, such as a computer device or processor, to perform the steps of this invention when executed. Depending on the context, any references herein to memory, storage, databases, or other media may include non-volatile and / or volatile memory. Examples of non-volatile memory include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), flash memory, magnetic tape, floppy disk, magneto-optical data storage device, optical data storage device, hard disk, solid-state drive, etc. Examples of volatile memory include random access memory (RAM), external cache memory, etc.

[0078] The technical features described above can be combined arbitrarily. Although not all possible combinations of these technical features are described, any combination of these technical features should be considered to be covered by this specification, provided that such combination does not contain contradictions.

[0079] The specific embodiments of the present invention described above do not constitute a limitation on the scope of protection of the present invention. Any other corresponding changes and modifications made in accordance with the technical concept of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A plant growth promotion method based on organosilicon, characterized in that, The method includes: S100 uses phosphor and silicone to make an LED growth-promoting light source to provide light for plants. It uses a heating module to regulate the temperature of the plant environment and uses light intensity sensors and temperature sensors to collect light intensity data and ambient temperature data of the plant environment according to the first monitoring cycle. S200: Determine whether the ambient temperature data is greater than or equal to the first preset threshold, and determine whether the light intensity data is less than the second preset threshold; S300: Based on the judgment result, output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module; The S300 includes: If the temperature data is greater than or equal to the first preset threshold and the light intensity data is less than the second preset threshold, a control signal is output to reduce the output duty cycle of the IGBT switching transistor in the heating module according to the first preset ratio. The light intensity data and ambient temperature data of the plant's environment are collected in the second monitoring cycle. It is determined whether the light intensity data of the next time is greater than or equal to the second preset threshold. Based on the determination result, a control signal is output to adjust the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

2. The plant growth promotion method based on organosilicon according to claim 1, characterized in that, The S300 also includes: If the next light intensity data is greater than or equal to the second preset threshold, return to step S100.

3. The plant growth promotion method based on organosilicon according to claim 1, characterized in that, The S300 also includes: If the next light intensity data is less than the second preset threshold, a control signal is output regarding increasing the output duty cycle of the IGBT transistor in the LED growth-promoting light source according to the first preset ratio. The third ambient temperature data is collected according to the second monitoring cycle, and it is determined whether the third ambient temperature data is greater than or equal to the first preset threshold. Based on the determination result, a control signal is output regarding adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module.

4. The plant growth promotion method based on organosilicon according to claim 3, characterized in that, The S300 also includes: If the third ambient temperature data is greater than or equal to the first preset threshold, return to step S100.

5. The plant growth promotion method based on organosilicon according to claim 3, characterized in that, The S300 also includes: If the third ambient temperature data is less than the first preset threshold, output a control signal about increasing the output duty cycle of the IGBT transistor in the heating module according to the second preset ratio, and return to step S100.

6. The plant growth promotion method based on organosilicon according to claim 1, characterized in that, The S100 further includes: The system uses a light intensity sensor and a first monitoring cycle to calculate the total time data within a day when the light intensity is greater than or equal to a second preset threshold. It then determines whether the total time data is greater than or equal to a third preset threshold. If so, it outputs a control signal to control the IGBT transistors in the LED growth-promoting light source to turn off.

7. The plant growth promotion method based on organosilicon according to claim 6, characterized in that, The S300 also includes: If the light intensity data is less than or equal to the second preset threshold, determine whether the light intensity data is less than or equal to the fourth preset threshold. If so, output a control signal related to increasing the output duty cycle of the IGBT transistor in the LED growth light source according to the first preset ratio.

8. A plant growth promotion system based on organosilicon, characterized in that, The plant growth promotion method based on organosilicon as described in any one of claims 1-7 includes: LED growth-promoting light sources are used to provide light for plants; The heating module is used to regulate the temperature of the environment in which the plants are located; The control module is used to collect light intensity data and ambient temperature data of the plant's environment according to a first monitoring cycle using a light intensity sensor and a temperature sensor; or to determine whether the ambient temperature data is greater than or equal to a first preset threshold and whether the light intensity data is less than a second preset threshold; or to control the execution module to output control signals related to adjusting the output duty cycle of the IGBT transistor in the LED growth-promoting light source and / or the output duty cycle of the IGBT transistor in the heating module based on the judgment results. The execution module is used to output control signals regarding the adjustment of the output duty cycle of the IGBT transistor in the LED growth light source and / or the output duty cycle of the IGBT transistor in the heating module.

9. An electronic device, characterized in that, include: Memory; The memory stores computer-readable instructions that, when executed by the processor, implement the plant growth promotion method based on organosilicon according to any one of claims 1 to 7.

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