半导体器件的制作方法以及半导体器件
By forming a contact layer, a metal layer, and an oxide layer in an LDMOS device and performing substrate bonding, the poor performance caused by the floating body effect is solved, and the device resistance is reduced and the performance is improved.
CN116487262BActive Publication Date: 2026-07-17SUZHOU WATECH ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU WATECH ELECTRONICS CO LTD
- Filing Date
- 2022-12-28
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing LDMOS devices suffer from poor performance due to the floating body effect, making it impossible to use long gates.
Method used
A buried metal layer is formed by metal implantation, and a contact layer, a first metal layer and a second oxide layer are formed by bonding a first substrate and a second substrate. The first substrate and part of the epitaxial layer are removed to form a target epitaxial layer, and a gate structure is formed on the target epitaxial layer.
Benefits of technology
It alleviates the floating body effect, reduces device resistance, and improves device performance.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116487262B_ABST
Abstract
本申请提供了一种半导体器件的制作方法以及半导体器件，该方法包括：首先，提供第一基底以及第二基底，第一基底包括层叠的第一衬底以及预备外延层，第二基底包括层叠的第二衬底以及第一氧化层；然后，去除部分预备外延层，形成位于预备外延层中的第一凹槽；之后，至少形成接触层、第一金属层以及第二氧化层，接触层位于第一凹槽的底部，第一金属层至少位于第一凹槽中，第一金属层位于接触层的远离第一衬底的表面上；之后，以第二氧化层以及第一氧化层为键合面，键合第一基底以及第二基底，并去除第一衬底以及部分外延层；最后，至少形成栅极结构，且栅极结构在目标外延层中的投影覆盖部分第一金属层。保证了半导体器件的性能较好。
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