IGBT structure with integrated drive circuit and intelligent power module

Abstract

The application discloses an IGBT structure integrated with a driving circuit and an intelligent power module, wherein the IGBT structure integrated with the driving circuit comprises a substrate, an active region and a terminal region formed in the substrate, the terminal region is arranged around the active region and comprises a main junction and a plurality of field limiting rings, the plurality of field limiting rings are concentrically arranged around the main junction in sequence, and the driving circuit is arranged in the main junction. Thus, the embodiment of the application can save the gate region connected with the driving circuit on the IGBT structure, reduce the area of the integrated chip and the number of packaged wafers, reduce the number and length of the connecting lines, improve the packaging efficiency of the IGBT, greatly reduce the parasitic inductance in the driving circuit and improve the working efficiency of the IGBT.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an IGBT structure with integrated driving circuit and an intelligent power module. Background Technology

[0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully controllable voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field-effect transistor. It combines the advantages of high input impedance of the insulated gate field-effect transistor and low on-state voltage drop of the bipolar transistor. Due to its advantages of low driving power and low saturation voltage drop, IGBT is currently widely used in various fields as a new type of power electronic device.

[0003] During use, IGBTs require a driver chip to operate, specifically by connecting the drive signal output of the driver chip to the gate region of the IGBT. In related technologies, the IGBT and driver chip are often separated, which can lead to drawbacks such as a large number of wafers required for packaging, a larger package size, higher parasitic inductance in the drive circuit, and lower switching efficiency. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in related technologies. Therefore, one objective of this invention is to propose an IGBT structure with an integrated drive circuit, which can save the gate area connected to the drive circuit on the IGBT structure, reduce the area of ​​the integrated chip and the number of packaged wafers, while reducing the number and length of connecting lines, improving the packaging efficiency of the IGBT, significantly reducing parasitic inductance in the drive circuit, and improving the operating efficiency of the IGBT.

[0005] The second objective of this invention is to propose an intelligent power module.

[0006] To achieve the above objectives, a first aspect of the present invention provides an IGBT structure with an integrated driving circuit. The IGBT structure includes a substrate and an active region and a termination region formed in the substrate, wherein the termination region is disposed around the active region and includes a main junction and a plurality of field limiting rings, the plurality of field limiting rings being concentrically disposed around the main junction in sequence, and the driving circuit is disposed in the main junction.

[0007] In the IGBT structure with integrated drive circuitry in this invention example, the termination region includes a main junction and multiple field-limiting rings, wherein the field-limiting rings sequentially surround the main junction. In this example, the drive circuitry is located within the main junction. This saves the gate area connected to the drive circuitry on the IGBT structure, reduces the area of ​​the integrated chip and the number of packaged wafers, while also reducing the number and length of interconnects, improving the IGBT's packaging efficiency, significantly reducing parasitic inductance in the drive circuit, and improving the IGBT's operating efficiency.

[0008] In some examples of the present invention, a P-well region and an N-well region are formed in the main junction, wherein at least a portion of the driving circuit is disposed in the N-well region, and the P+ structure of the P-well region is connected to the emitter of the IGBT.

[0009] In some examples of the present invention, the driving circuitry is entirely disposed in the N-well region.

[0010] In some examples of the present invention, the power supply voltage terminal of the driving circuit is connected to the N+ structure of the N-well region, the ground terminal of the driving circuit is connected to the P+ structure formed in the N-well region, and the P+ structure formed in the N-well region is connected to the emitter of the IGBT.

[0011] In some examples of the present invention, a sub-P-well region is formed within the N-well region, and the P+ structure formed within the N-well region is located in the sub-P-well region.

[0012] In some examples of the present invention, a portion of the driving circuit is disposed in the N-well region, and another portion of the driving circuit is disposed in the P-well region.

[0013] In some examples of the present invention, the power supply voltage terminal of the driving circuit is connected to the N+ structure of the N-well region, and the ground terminal of the driving circuit is connected to the P+ structure of the P-well region.

[0014] In some examples of the present invention, a first preset distance is maintained between the edge of the N-well region and the edge of the main junction.

[0015] In some examples of the present invention, the first preset distance is 3 micrometers to 30 micrometers.

[0016] To achieve the above objectives, a second aspect of the present invention provides an intelligent power module comprising an IGBT structure with an integrated drive circuit as described in the above example.

[0017] The intelligent power module in this example, through the IGBT structure with integrated drive circuitry as described above, can save the gate area connected to the drive circuitry on the IGBT structure, reduce the area of ​​the integrated chip and the number of packaged wafers, while also reducing the number and length of connecting lines, improving the packaging efficiency of the IGBT, significantly reducing parasitic inductance in the drive circuit, and improving the operating efficiency of the IGBT.

[0018] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of an IGBT structure according to an embodiment of the present invention;

[0020] Figure 2 This is a partially enlarged schematic diagram of an IGBT terminal structure according to an embodiment of the present invention;

[0021] Figure 3 This is a schematic diagram of the IGBT structure in related technologies;

[0022] Figure 4 This is a schematic diagram of the integrated design of a drive circuit according to an embodiment of the present invention;

[0023] Figure 5 This is a schematic diagram of the integrated design of the drive circuit according to another embodiment of the present invention;

[0024] Figure 6 This is a structural block diagram of an intelligent power module according to an embodiment of the present invention. Detailed Implementation

[0025] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0026] The IGBT structure and intelligent power module of the integrated drive circuit of the present invention are described below with reference to the accompanying drawings.

[0027] Figure 1 This is a schematic diagram of an IGBT structure according to an embodiment of the present invention.

[0028] like Figure 1 As shown, this invention proposes an IGBT structure 100 integrating a driving circuit. The IGBT structure 100 includes a substrate 10, an active region 11 formed on the substrate 10, and a termination region 12. It should be noted that... Figure 1 The double arrows in the terminal area 12 directly indicate the area of ​​the terminal area 12. That is, in the IGBT structure 100, the central area is the active area 11, and the area between the edge of the active area 11 and the edge of the IGBT structure 100 can be regarded as the terminal area 12 of the IGBT structure. That is, the terminal area 12 is set around the active area 11.

[0029] Terminal area 12 includes a main junction and multiple field limiting loops, which concentrically surround the main junction sequentially. Specifically, as... Figure 2 As shown, Figure 2 for Figure 1 The enlarged view of the dashed box, i.e. Figure 2 This is an enlarged schematic diagram of terminal area 12, from Figure 2 As shown, the terminal region 12 includes a main junction and multiple field limiting loops, such as field limiting loop 1, field limiting loop 2, and field limiting loop 3. Furthermore, in this embodiment, the driving circuit for driving the IGBT can be located within the main junction region, i.e. Figure 2 The driving circuit area shown in the figure.

[0030] In this embodiment, the driving circuit can be located within the main junction region, so it is not necessary to have a gate region on the substrate, allowing the IGBT to connect to the driving circuit through this gate region. Figure 3 As shown, in related technologies, an IGBT structure typically includes a gate region. This gate region can be connected to the output signal terminal of an external driving circuit, allowing the external driving circuit to send control signals to the IGBT gate and thus control the IGBT. However, the embodiments of this invention integrate the driving circuit into the main junction, thereby eliminating the need for the gate region on the IGBT structure. Furthermore, by placing the driving circuit within the main junction of the IGBT, it does not occupy the active region of the IGBT, thus having minimal impact on the IGBT's performance. In fact, it can even increase the area of ​​the active region to compensate for the increased area resulting from integrating the driving circuit into the main junction region.

[0031] In addition, after setting the drive circuit in the circuit area in this embodiment, a terminal block needs to be set in the main junction area so that the drive circuit set in the main junction area can be connected to an external circuit, thereby completing the control of the IGBT. For example... Figure 4 As shown, several binding terminals can be set inside the IGBT main junction for connection to external terminals. These terminals can be used for signal input or output. It should be noted that the number, location, size, and other information of the binding terminals can be determined based on the number and function of the external signals.

[0032] In some embodiments of the present invention, it is understood that the main junction of the IGBT structure is composed of a P-well. This is to ensure that the driving circuit, after being placed inside the main junction, can function properly. Figure 4 or Figure 5 As shown, in this embodiment of the invention, an N-well region is also formed within the P-well region. A P+ structure is provided in the P-well region, and the modified P+ structure can be connected to the emitter of the IGBT. An N+ structure is provided in the N-well region.

[0033] In this embodiment, such as Figure 4 As shown, this invention allows the entire driving circuit to be housed within the N-well region. It should be noted that in this embodiment, a sub-P-well region is also formed within the N-well region, and a P+ structure is formed within this sub-P-well region. This P+ structure is connected to the ground terminal of the driving circuit, while the N+ structure in the N-well region is connected to the power supply voltage terminal of the driving circuit. It is understood that all P-well regions in the main junction are interconnected, so all P+ structures in the main junction are connected to the ground terminal of the driving circuit and the emitter of the IGBT. In this embodiment, setting the N-well potential to be connected to the power supply voltage terminal VCC of the driving circuit ensures that a reverse-biased PN junction is formed between the N-well region and the P-well region of the main junction. This reverse-biased PN junction provides sufficient withstand voltage between VCC, the ground terminal of the driving circuit, and the emitter of the IGBT.

[0034] It should be noted that, as Figure 4 As shown, P in the N-well region represents a PMOS (positive channel Metal-Oxide Semiconductor) transistor, and N in the P-well region represents an NMOS (negative channel Metal-Oxide-Semiconductor) transistor. In this embodiment, it is meant that PMOS transistors can be disposed in the N-well region, and NMOS transistors can be disposed in the P-well region. Therefore, the driving circuit located in this region can place the NMOS transistors and PMOS transistors appearing in the driving circuit in the corresponding P-well and N-well regions. To ensure the reverse bias withstand voltage safety between the N-well region where the driving circuit is located and the P-well of the main junction, a first preset distance needs to be maintained between the edge of the N-well region where the driving circuit is located and the edge of the main junction. This first preset distance is generally between 3 micrometers and 30 micrometers, and the specific distance can be determined by the process technology. It should be noted that the first preset distance in this embodiment can be the minimum distance from the edge of the N-well region where the driving circuit is located to the edge of the main junction. Of course, it is also possible to set it to a distance greater than 30 micrometers, such as 40 micrometers, 50 micrometers, etc., without making a specific limitation here.

[0035] In another embodiment of the invention, such as Figure 5As shown, a portion of the driving circuit can be located on the N-well region, and another portion can be directly located on the P-well region of the main junction. The power supply voltage terminal of the driving circuit can be connected to the N+ structure on the N-well region, while the ground terminal of the driving circuit can be connected to the P+ structure on the P-well region.

[0036] Specifically, see Figure 5 As can be seen, in this embodiment, an N-well region is directly set on the P-well region of the main junction. This N-well region has an N+ structure, and the P-well region also has a P+ structure. It can be understood that, as Figure 5 As shown, the P-well region can have two P+ structures. One is used to connect to the emitter of the IGBT, and the other is used to connect to the ground terminal of the drive circuit. It should be noted that the two P+ structures on the P-well region are also connected. Of course, if the ground terminal of the drive circuit is close to the emitter of the IGBT, the two P+ structures can be integrated into one, that is, the emitter of the IGBT is connected to the ground terminal of the drive circuit and then connected to the P+ structure.

[0037] like Figure 5 As shown, the NMOS and PMOS transistors in the driving circuit can be placed in the corresponding P-well and N-well regions. Similarly, in order to ensure the reverse bias withstand voltage safety between the N-well region where the driving circuit is located and the P-well of the main junction, a first preset distance needs to be maintained between the edge of the N-well region and the edge of the P-well region of the main junction. This first preset distance is generally between 3 micrometers and 30 micrometers, and the specific distance can be determined by the process technology.

[0038] Furthermore, it should be noted that the width of the main junction in this embodiment can be appropriately adjusted according to design cost, design shape, or design requirements. For example, the width of the main junction for a 650-volt withstand voltage specification is generally limited to between 30 micrometers and 150 micrometers.

[0039] Based on the above embodiments, it can be concluded that, Figure 4 and 5 As shown, where, Figure 4 First, an N-well region is set within the main junction P-well region. Then, a sub-P-well region is set within this N-well region. The driving circuit is then placed within both the N-well region and the sub-P-well region. The power supply terminal of the driving circuit is connected to the N+ structure in the N-well region, while the ground terminal of the driving circuit is connected to the P+ structure in the sub-P-well region. Figure 5 An N-well region is directly set within the P-well region of the main junction. The driving circuit is then placed in both the N-well and P-well regions. The power supply terminal of the driving circuit is connected to the N+ structure in the N-well region, while the ground terminal is connected to the P+ structure in the P-well region. Relative to... Figure 4 The embodiment shown, Figure 5 The limited embodiments are more flexible, allowing the driving circuit to be directly placed on the P-well region of the main junction, while Figure 4The limited embodiment further involves first setting up an N-well region, and then setting up a sub-P-well region within the N-well region, which is relatively cumbersome. However, regardless of the above... Figure 4 or Figure 5 The embodiments shown all integrate the drive circuit within the main junction of the IGBT termination structure, ensuring that the drive circuit can function properly.

[0040] In summary, the IGBT structure in the integrated drive circuit of this invention can save the gate area connected to the drive circuit on the IGBT structure, reduce the area of ​​the integrated chip and the number of packaged wafers, and at the same time reduce the number and length of the connecting lines, improve the packaging efficiency of the IGBT, significantly reduce the parasitic inductance in the drive circuit, and improve the working efficiency of the IGBT.

[0041] Figure 6 This is a structural block diagram of an intelligent power module according to an embodiment of the present invention.

[0042] Furthermore, such as Figure 6 As shown, the present invention proposes an intelligent power module 1000, which includes an IGBT structure with integrated drive circuitry in the above embodiments.

[0043] The intelligent power module of this invention, through the IGBT structure with integrated drive circuit in the above example, can save the gate area connected to the drive circuit on the IGBT structure, reduce the area of ​​the integrated chip and the number of packaged wafers, and at the same time reduce the number and length of connecting lines, improve the packaging efficiency of IGBT, significantly reduce the parasitic inductance in the drive circuit, and improve the working efficiency of IGBT.

[0044] Furthermore, the other components and functions of the intelligent power module in the embodiments of the present invention are known to those skilled in the art, and will not be described in detail here to reduce redundancy.

[0045] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0046] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0047] Furthermore, the terms "first," "second," etc., used in the embodiments of this invention are for descriptive purposes only and should not be construed as indicating or implying relative importance, or implicitly specifying the number of technical features indicated in this embodiment. Therefore, features defined with terms such as "first" and "second" in the embodiments of this invention can explicitly or implicitly indicate that the embodiment includes at least one of those features. In the description of this invention, the word "multiple" means at least two or more, such as two, three, four, etc., unless otherwise explicitly specified in the embodiments.

[0048] In this invention, unless otherwise explicitly specified or limited in the embodiments, the terms "installation," "connection," "joining," and "fixing" appearing in the embodiments should be interpreted broadly. For example, a connection can be a fixed connection, a detachable connection, or an integral part; it can also be a mechanical connection, an electrical connection, etc. Of course, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components, or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific implementation.

[0049] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0050] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. An IGBT structure with integrated drive circuitry, characterized in that, include: Substrate; An active region and a termination region are formed in the substrate. The termination region is arranged around the active region and includes a main junction and multiple field limiting rings. The multiple field limiting rings concentrically surround the main junction in sequence. All driving circuits are arranged in the main junction. In the driving circuit, the NMOS transistor is placed in the first well region; In the driving circuit, the PMOS transistor is placed in the second well region; The first well region is a P-type well region; The second well region is an N-type well region; The main junction has a P-well region and an N-well region, wherein at least a portion of the driving circuit is disposed in the N-well region, and the P+ structure of the P-well region is connected to the emitter of the IGBT.

2. The IGBT structure according to claim 1, characterized in that, All of the driving circuits are located in the N-well region.

3. The IGBT structure according to claim 2, characterized in that, The power supply voltage terminal of the driving circuit is connected to the N+ structure of the N-well region, and the ground terminal of the driving circuit is connected to the P+ structure formed in the N-well region. The P+ structure formed in the N-well region is connected to the emitter of the IGBT.

4. The IGBT structure according to claim 3, characterized in that, A sub-P-well region is formed within the N-well region, and the P+ structure formed within the N-well region is located within the sub-P-well region.

5. The IGBT structure according to claim 2, characterized in that, A portion of the driving circuit is disposed in the N-well region, and another portion of the driving circuit is disposed in the P-well region.

6. The IGBT structure according to claim 5, characterized in that, The power supply voltage terminal of the driving circuit is connected to the N+ structure of the N-well region, and the ground terminal of the driving circuit is connected to the P+ structure of the P-well region.

7. The IGBT structure according to any one of claims 2-6, characterized in that, The edge of the N-well region and the edge of the main junction maintain a first preset distance.

8. The IGBT structure according to claim 7, characterized in that, The first preset distance is 3 micrometers to 30 micrometers.

9. A smart power module, characterized in that, An IGBT structure including an integrated drive circuit according to any one of claims 1-8.

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