Power conversion device

Abstract

The power conversion device of the embodiment has a direct-current side terminal and a heat dissipation member. The heat dissipation member is electrically conductive. The heat dissipation member is provided to the direct-current side terminal.

Description

Technical Field

[0001] Embodiments of the present invention relate to power conversion devices. Background Technology

[0002] Conventional power control devices exist where the housing of electronic devices has a heat sink. Power conversion devices, for example, cool multiple switching elements by having a heat sink on a heat-dissipating substrate on which multiple switching elements, which act as heat sources, are mounted.

[0003] However, in power conversion devices, heat generation corresponding to heat transfer or electrical current is generated in the path of electrical current, such as metal conductors or wires connected to multiple switching elements, which may lead to abnormal conditions caused by temperature rise.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2020-167808 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The problem to be solved by the present invention is to provide a power conversion device that can improve heat dissipation capacity.

[0009] Methods for solving problems

[0010] The power conversion device of this embodiment has a DC side terminal and a heat dissipation component. The heat dissipation component is conductive. The heat dissipation component is disposed at the DC side terminal. Attached Figure Description

[0011] Figure 1 This is an exploded perspective view showing the structure of the power conversion device according to the embodiment.

[0012] Figure 2 This is a diagram showing the structure of the power conversion device according to the implementation method.

[0013] Figure 3 This is an exploded perspective view showing the structure of the power conversion device in a modified embodiment.

[0014] Figure 4 This is a diagram showing the structure of the power conversion device in a modified embodiment. Detailed Implementation

[0015] Hereinafter, the power conversion device according to the embodiments will be described with reference to the accompanying drawings.

[0016] Figure 1This is an exploded perspective view showing the structure of the power conversion device 10 according to the embodiment. Figure 2 This is a diagram showing the structure of the power conversion device 10 according to the embodiment.

[0017] Below, the directions of the X, Y, and Z axes, which are orthogonal to each other in 3D space, are parallel to each other. For example, as... Figure 1 As shown, the Z-axis is parallel to the thickness direction of the power conversion device 10. The Y-axis is parallel to the short side direction of the power conversion device 10. The X-axis is parallel to the long side direction of the power conversion device 10.

[0018] The power conversion device 10 is, for example, a panel found in electrical equipment. The panel is a distribution panel, sub-distribution panel, or control panel that constitutes a power supply device and a motor drive device.

[0019] The power conversion device 10 includes, for example, various circuit components such as semiconductor elements, conductors, fuses, capacitors, transformers, switches, circuit breakers, and measuring devices that constitute a power converter such as an inverter.

[0020] like Figure 1 As shown, the power conversion device 10 includes, for example, a multiphase semiconductor stack 11, multiple capacitors 13, a positive bus 15P and a negative bus 15N, a positive side connection component 17P and a negative side connection component 17N, an insulating component 19, positive heat dissipation components (21P, 23P, 25P) for each phase of the multiphase system, and negative heat dissipation components (21N, 23N, 25N) for each phase of the multiphase system.

[0021] The multiphase semiconductor stack 11 is, for example, a three-phase semiconductor stack 11 consisting of an R phase, an S phase, and a T phase. The three-phase semiconductor stack 11 is, for example, disposed at the first end of the two ends in the thickness direction of the power conversion device 10. The first end is, for example, the end on the positive direction side of the Z-axis. The three-phase semiconductor stack 11 is, for example, arranged in a row along the X-axis direction.

[0022] like Figure 2 As shown, each semiconductor stack 11 has, for example, a bridge circuit formed by multiple bridging switching elements and rectifier elements. The switching elements are transistors such as IGBTs (Insulated Gate Bipolar Transistors) or MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The rectifier elements are diodes connected in parallel with each transistor.

[0023] The bridging circuit has multiple pairs of high-side and low-side transistors H and L. The bridging circuit has a freewheeling diode D connected in the forward direction from the emitter to the collector between the collector and emitter of each transistor H and L.

[0024] The collector of each phase's high-side-arm transistor H is connected to the positive terminals PR, PS, and PT of that phase. The emitter of each phase's low-side-arm transistor L is connected to the negative terminals NR, NS, and NT of that phase. The emitter of each phase's high-side-arm transistor H and the collector of each phase's low-side-arm transistor L are connected to the AC side terminals R, S, and T of that phase.

[0025] like Figure 1 As shown, a plurality of capacitors 13 are disposed, for example, at the second end of the two ends in the thickness direction of the power conversion device 10. The second end is, for example, the end on the negative direction side of the Z-axis. The plurality of capacitors 13 are arranged in multiple rows, for example, along the X-axis and Y-axis directions respectively.

[0026] like Figure 2 As shown, multiple capacitors 13 are connected in parallel with the semiconductor stack 11 of each of the three phases. Each capacitor 13 is, for example, a capacitor that smooths out voltage fluctuations caused by the switching operations of the switching elements of the semiconductor stack 11. The capacitors 13 of each phase are connected between the positive terminal CP and the negative terminal CN of each phase.

[0027] Positive busbar 15P is a conductor connected to the positive terminals PR, PS, and PT of each phase in the multiphase system. Negative busbar 15N is a conductor connected to the negative terminals NR, NS, and NT of each phase in the multiphase system.

[0028] like Figure 1 As shown, the positive bus 15P and the negative bus 15N are, for example, rectangular plates. The positive bus 15P and the negative bus 15N are positioned, for example, at one end in the Y-axis direction and at the center in the X-axis direction of the power conversion device 10. The positive bus 15P and the negative bus 15N are arranged adjacent to each other in the X-axis direction and are configured to be parallel to each other in the Z-axis direction.

[0029] The positive electrode side connection component 17P and the negative electrode side connection component 17N are, for example, plate-shaped conductors. The positive electrode side connection component 17P and the negative electrode side connection component 17N are, for example, configured to be stacked on top of each other in the Z-axis direction between the multiphase semiconductor stack 11 and the plurality of capacitors 13.

[0030] like Figure 2 As shown, the positive side connection component 17P connects the positive terminals PR, PS, and PT of the multiphase capacitor to the positive side terminal CP of the multiphase capacitor 13.

[0031] The negative side connection component 17N connects the negative terminals NR, NS, and NT of the multiphase capacitor to the negative side terminal CN of the multiphase capacitor 13.

[0032] The positive side connection component 17P and the negative side connection component 17N connect the multiphase capacitor 13 in parallel.

[0033] like Figure 1 As shown, the insulating member 19 is, for example, sheet-like in shape. The insulating member 19 is disposed, for example, between the positive-side connecting member 17P and the negative-side connecting member 17N, which are stacked along the Z-axis direction. The insulating member 19 electrically insulates the positive-side connecting member 17P from the negative-side connecting member 17N.

[0034] The multiphase positive electrode heat dissipation component and the multiphase negative electrode heat dissipation component are each, for example, plate-shaped. Each positive electrode heat dissipation component and each negative electrode heat dissipation component are configured to protrude from the positive electrode side connection component 17P and the negative electrode side connection component 17N in the Z-axis direction. Each positive electrode heat dissipation component and each negative electrode heat dissipation component are, for example, formed of a material with electrical and thermal conductivity, such as metal.

[0035] The positive electrode heat dissipation components of the multiphase are, for example, the positive electrode heat dissipation component 21P of the R phase, the positive electrode heat dissipation component 21P of the S phase, and the positive electrode heat dissipation component 21P of the T phase.

[0036] The negative electrode heat dissipation components of the multiphase system are, for example, the negative electrode heat dissipation component 21N for the R phase, the negative electrode heat dissipation component 23N for the S phase, and the negative electrode heat dissipation component 25N for the T phase.

[0037] The positive heat dissipation components 21P, 23P, and 25P of each phase, and the negative heat dissipation components 21N, 23N, and 25N of each phase, are connected to the positive terminals PR, PS, and PT of each phase and the negative terminals NR, NS, and NT of each phase, for example, at the central portion in the Y-axis direction of the power conversion device 10. The positive heat dissipation components 21P, 23P, and 25P of each phase, and the negative heat dissipation components 21N, 23N, and 25N of each phase, extend from the central portion in the Y-axis direction of the power conversion device 10 toward one end and are connected to the positive bus 15P and the negative bus 15N.

[0038] For example, the positive electrode heat dissipation component 21P of the R phase has a first positive electrode heat dissipation component 21Pa and a second positive electrode heat dissipation component 21Pb. The negative electrode heat dissipation component 21N of the R phase has a first negative electrode heat dissipation component (not shown) and a second negative electrode heat dissipation component (not shown). The first positive electrode heat dissipation component 21Pa and the first negative electrode heat dissipation component of the R phase extend from the center of the power conversion device 10 in the Y-axis direction toward one end. The second positive electrode heat dissipation component 21Pb and the second negative electrode heat dissipation component of the R phase extend along the inner wall surface of the frame 31 from the first end of the two ends in the X-axis direction toward the center.

[0039] For example, the positive electrode heat dissipation component 25P of phase T has a first positive electrode heat dissipation component 25Pa and a second positive electrode heat dissipation component 25Pb. The negative electrode heat dissipation component 25N of phase T has a first negative electrode heat dissipation component (not shown) and a second negative electrode heat dissipation component (not shown). The first positive electrode heat dissipation component 25Pa and the first negative electrode heat dissipation component of phase T extend from the center of the power conversion device 10 in the Y-axis direction toward one end. The second positive electrode heat dissipation component 25Pb and the second negative electrode heat dissipation component of phase T extend along the inner wall surface of the frame 31 from the second end of the two ends in the X-axis direction toward the center.

[0040] According to the embodiments described above, heat dissipation capacity can be improved by using positive heat dissipation components 21P, 23P, 25P and negative heat dissipation components 21N, 23N, 25N, each having a positive terminal PR, PS, PT and a negative terminal NR, NS, NT provided on the DC side of each of the three phases. Each heat dissipation component 21P, 23P, 25P, 21N, 23N, 25N is connected to each semiconductor stack 11, which serves as a heat source, via each terminal PR, PS, PT, NR, NS, NT, thereby promoting heat dissipation from the heat source and suppressing temperature rise in the path used for power transmission.

[0041] Each positive electrode heat dissipation component 21P, 23P, 25P and each negative electrode heat dissipation component 21N, 23N, 25N are connected to the positive electrode bus 15P and the negative electrode bus 15N, which can promote heat transfer from the semiconductor stack 11 of each phase to the positive electrode bus 15P and the negative electrode bus 15N respectively. The semiconductor stack 11 of each phase is directly connected to the positive electrode bus 15P and the negative electrode bus 15N without passing through other phases, thereby improving the heat dissipation of the semiconductor stack 11 of each phase and suppressing the local temperature rise of the path used for power transmission.

[0042] By having a positive-side connection member 17P and a negative-side connection member 17N that connect the multiphase capacitors 13 in parallel, the voltage balance among the multiphase capacitors can be easily ensured.

[0043] By having a second positive electrode heat dissipation component 21Pb and a second negative electrode heat dissipation component of the R phase and a second positive electrode heat dissipation component 25Pb and a second negative electrode heat dissipation component of the T phase arranged along the inner wall surface of the frame 31, the heat dissipation of the semiconductor stack 11 of the R phase and the T phase can be improved.

[0044] In addition, when the power conversion device 10 is used as a reactive power compensation device, the positive bus 15P and the negative bus 15N function as heat dissipation components that do not carry current, which can increase the device capacity.

[0045] The following is an explanation of the variations.

[0046] In the above-described embodiment, the power conversion device 10 has positive heat dissipation components 21P, 23P, and 25P for each phase connected to the positive bus 15P and the negative bus 15N, and negative heat dissipation components 21N, 23N, and 25N for each phase, but is not limited thereto. For example, at least one of the three-phase positive heat dissipation components 21P, 23P, and 25P and at least one of the three-phase negative heat dissipation components 21N, 23N, and 25N may be connected to the positive bus 15P and the negative bus 15N.

[0047] Figure 3 This is an exploded perspective view showing the structure of the power conversion device 10A in a modified embodiment. Figure 4 This is a diagram showing the structure of the power conversion device 10A in a modified embodiment.

[0048] like Figure 3 and Figure 4 As shown, in the modified power conversion device 10A, only the positive heat dissipation component 23P of phase S of the three-phase positive heat dissipation components 21P, 23P, and 25P is directly connected to the positive bus 15P. Only the negative heat dissipation component 23N of phase S of the three-phase negative heat dissipation components 21N, 23N, and 25N is directly connected to the negative bus 15N.

[0049] In the modified power conversion device 10A, the positive terminals PR and PT of the R phase and T phase are indirectly connected to the positive bus 15P via the positive side connection member 17P and the positive heat dissipation member 23P of the S phase. The negative terminals NR and NT of the R phase and T phase are indirectly connected to the negative bus 15N via the negative side connection member 17N and the negative heat dissipation member 23N of the S phase.

[0050] Furthermore, in the above embodiment, one end of the positive bus 15P and the negative bus 15N in the Y-axis direction is disposed at the center in the X-axis direction of the power conversion device 10, but this is not a limitation. The positive bus 15P and the negative bus 15N may also be disposed at appropriate positions in the power conversion device 10.

[0051] According to at least one embodiment described above, heat dissipation capacity can be improved by having positive heat dissipation components 21P, 23P, 25P and negative heat dissipation components 21N, 23N, 25N, each having a positive terminal PR, PS, PT and a negative terminal NR, NS, NT provided on the DC side of each of the three phases. Each heat dissipation component 21P, 23P, 25P, 21N, 23N, 25N is connected to each semiconductor stack 11, which serves as a heat source, via each terminal PR, PS, PT, NR, NS, NT, thereby promoting heat dissipation from the heat source and suppressing temperature rise in the path used for power transmission.

[0052] Several embodiments of the present invention have been described, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope or spirit of the invention, as well as in the scope of the invention as described in the claims and their equivalents.

[0053] Label Explanation

[0054] 10, 10A…Power conversion device, 11…Semiconductor stack, 13…Capacitor, 15N…Negative busbar, 15P…Positive busbar, 17N…Negative side connection component, 17P…Positive side connection component, 19…Insulating component, 21N, 23N, 25N…Negative heat dissipation component, 21P, 23P, 25P…Positive heat dissipation component, 31…Frame, CP…Positive side terminal, CN…Negative side terminal, NR, NS, NT…Negative terminal, PR, PS, PT…Positive terminal

Claims

1. A power conversion device, comprising: Multiple positive extremes; Multiple negative extremes; A common positive conductor, serving as a common conductor relative to the plurality of positive terminals; A common conductor for negative terminals, serving as a common conductor relative to the plurality of negative terminals; Multiple positive electrode heat dissipation components connect each of the positive terminals to the common positive electrode conductor, and are electrically conductive; Multiple negative electrode heat dissipation components connect each negative electrode terminal to the common conductor of the negative electrode, and are electrically conductive; Each of the aforementioned positive electrode heat dissipation components is connected to the heating element via the positive terminal. Each of the negative electrode heat dissipation components is connected to the heat-generating element via the negative electrode terminal.

2. The power conversion device according to claim 1, comprising: Multiple capacitors are connected, respectively, between the positive and negative terminals of each phase; and A connecting component connects multiple capacitors in parallel.

3. The power conversion device according to claim 1 or 2, wherein, The power conversion device has a frame. The positive electrode heat dissipation component and the negative electrode heat dissipation component are arranged along the wall of the frame.

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