Method, device and equipment for detecting semiconductor structure and storage medium

Abstract

This disclosure provides a method, apparatus, device, and storage medium for detecting semiconductor structures. The detection method includes: applying a preset voltage to both ends of the semiconductor structure through a first detection circuit to obtain a current value flowing through the semiconductor structure; applying a preset current to both ends of the semiconductor structure through a second detection circuit to obtain a voltage value across the semiconductor structure; and determining the resistance value of the semiconductor structure based on the voltage value and the current value. This disclosure obtains the current value flowing through the semiconductor structure through the first detection circuit and the voltage value across the semiconductor structure through the second detection circuit. By using the first and second detection circuits to form separate current detection terminals and voltage detection terminals, the influence of wiring and contact resistance impedance can be effectively eliminated, improving detection accuracy and the reliability of detection results.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a method, apparatus, device and storage medium for detecting semiconductor structures. Background Technology

[0002] Currently, the method for testing the resistance of a Pwell well involves measuring the voltage and current across the Pwell well and then calculating its resistance. However, because the probe used in the test generates contact resistance when it comes into contact with the Pwell well, the calculated resistance includes both the Pwell well's resistance and the probe's contact resistance, resulting in low reliability of the test results. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0004] This disclosure provides a method, apparatus, device, and storage medium for detecting semiconductor structures.

[0005] According to a first aspect of the present disclosure, a method for detecting a semiconductor structure is provided, the method comprising:

[0006] A preset voltage is applied to both ends of the semiconductor structure through the first detection circuit to obtain the current value flowing through the semiconductor structure.

[0007] A preset current is applied to both ends of the semiconductor structure through the second detection circuit to obtain the voltage value across the semiconductor structure.

[0008] The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

[0009] According to some embodiments of the present disclosure, the first detection circuit includes a first detection terminal and a second detection terminal, wherein the first detection terminal is located at a first end of the semiconductor structure and the second detection terminal is located at a second end of the semiconductor structure.

[0010] A first voltage is applied to the first detection terminal, and a second voltage is applied to the second detection terminal. The difference between the first voltage and the second voltage is the preset voltage.

[0011] According to some embodiments of this disclosure, the second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at a first end of the semiconductor structure and the fourth detection terminal is located at a second end of the semiconductor structure;

[0012] A first current is supplied to the third detection terminal, and a second current is supplied to the fourth detection terminal, wherein the first current and the second current are the same.

[0013] According to some embodiments of this disclosure, the first current and the second current are 0A.

[0014] According to some embodiments of this disclosure, the first detection end includes a first probe, the second detection end includes a second probe, and the first probe and the second probe are connected to a first source detection unit.

[0015] According to some embodiments of this disclosure, the third detection end includes a third probe, the fourth detection end includes a fourth probe, and the third probe and the fourth probe are connected to the second source detection unit.

[0016] According to some embodiments of this disclosure, the resistance value of the semiconductor structure is determined based on the ratio of the voltage value to the current value.

[0017] A second aspect of this disclosure provides a semiconductor structure detection apparatus, the detection apparatus comprising:

[0018] The first acquisition module is configured to apply a preset voltage to both ends of the semiconductor structure through a first detection circuit to acquire the current value flowing through the semiconductor structure.

[0019] The second acquisition module is configured to apply a preset current to both ends of the semiconductor structure through a second detection circuit to acquire the voltage value across the semiconductor structure.

[0020] The determination module is configured to determine the resistance value of the semiconductor based on the voltage value and the current value.

[0021] According to some embodiments of the present disclosure, the first detection circuit includes a first detection terminal and a second detection terminal, wherein the first detection terminal is located at a first end of the semiconductor structure and the second detection terminal is located at a second end of the semiconductor structure.

[0022] The first acquisition module is configured to apply a first voltage to the first detection terminal and a second voltage to the second detection terminal, wherein the difference between the first voltage and the second voltage is the preset voltage.

[0023] According to some embodiments of this disclosure, the second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at a first end of the semiconductor structure and the fourth detection terminal is located at a second end of the semiconductor structure;

[0024] The second acquisition module is configured to supply a first current to the third detection terminal and a second current to the fourth detection terminal, wherein the first current and the second current are the same.

[0025] According to some embodiments of this disclosure, the first current and the second current are 0A.

[0026] According to some embodiments of this disclosure, the first detection end includes a first probe, the second detection end includes a second probe, and the first probe and the second probe are connected to a first source detection unit.

[0027] According to some embodiments of this disclosure, the third detection end includes a third probe, the fourth detection end includes a fourth probe, and the third probe and the fourth probe are connected to the second source detection unit.

[0028] According to some embodiments of this disclosure, the determining module is configured to determine the resistance value of the semiconductor structure based on the ratio of the voltage value to the current value.

[0029] A third aspect of this disclosure provides a semiconductor structure detection apparatus, the detection apparatus comprising:

[0030] processor;

[0031] Memory used to store processor-executable instructions;

[0032] The processor is configured to perform the following operations:

[0033] A preset voltage is applied to both ends of the semiconductor structure through the first detection circuit to obtain the current value flowing through the semiconductor structure.

[0034] A preset current is applied to both ends of the semiconductor structure through the second detection circuit to obtain the voltage value across the semiconductor structure.

[0035] The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

[0036] According to a fourth aspect of the present disclosure, a non-transitory computer-readable storage medium is provided, which, when instructions in the storage medium are executed by a processor of a semiconductor-structured detection device, enables the detection device to perform the following operations:

[0037] A preset voltage is applied to both ends of the semiconductor structure through the first detection circuit to obtain the current value flowing through the semiconductor structure.

[0038] A preset current is applied to both ends of the semiconductor structure through the second detection circuit to obtain the voltage value across the semiconductor structure.

[0039] The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

[0040] The semiconductor structure detection method, apparatus, device, and storage medium provided in this disclosure obtain the current value flowing through the semiconductor structure through a first detection circuit and the voltage value across the semiconductor structure through a second detection circuit. By using the first and second detection circuits to form separate current detection terminals and voltage detection terminals, the influence of wiring and contact resistance impedance can be effectively eliminated, thereby improving detection accuracy and reliability of detection results.

[0041] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0042] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0043] Figure 1 This is a schematic diagram of the testing principle of semiconductor structures in related technologies;

[0044] Figure 2 This is a flowchart illustrating a test method for a semiconductor structure according to an exemplary embodiment;

[0045] Figure 3 This is a schematic diagram illustrating a testing method for a semiconductor structure according to an exemplary embodiment;

[0046] Figure 4-1 and Figure 4-2 It is a RU curve diagram of a semiconductor structure tested using relevant technologies;

[0047] Figure 5-1 and Figure 5-2 This is a test method for testing a semiconductor structure using an exemplary embodiment of the present disclosure, and includes a graph showing the RUB curve.

[0048] Figure 6 This is a structural diagram of a test apparatus for a semiconductor structure according to an exemplary embodiment;

[0049] Figure 7 This is a block diagram illustrating a test apparatus for a semiconductor structure according to an exemplary embodiment. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0051] In the field of semiconductor technology, when performing reverse analysis and failure analysis, it is necessary to perform various electrical tests on semiconductor structures, such as electronic devices, capacitors, and resistors in a chip, in order to understand various electrical-related parameters.

[0052] In related technologies, the detection of the Pwell well resistance in a chip is referenced... Figure 1 As shown, the same test circuit is used in all cases. During the test, the voltage U across the Pwell is directly read using voltmeter V', and the current I flowing through the Pwell is read using ammeter I'. Then, the resistance R of the Pwell is calculated using R = U / I. p However, the resistance value calculated using this testing and calculation method includes the contact resistance R between the probes at both ends of the detection circuit and the Pwell well. c1 and R c2 That is, the calculation result R = R c1 +R p +R c2 This results in the calculated resistance value R being lower than the actual resistance value R of the Pwell well. p Too large.

[0053] This disclosure provides a method and apparatus for detecting semiconductor structures. Based on the Kelvin test principle, it utilizes a four-wire detection method, using different detection circuits to detect and obtain the voltage values ​​across the semiconductor structure and the current values ​​flowing through the semiconductor structure. This effectively ignores the influence of the contact resistance of the detection circuit. The resistance value of the semiconductor structure can be directly calculated from the detected voltage and current values, thereby improving the detection accuracy and reliability of the detection results.

[0054] Kelvin four-terminal sensing, also known as four-terminal sensing (4T sensing), four-wire sensing, or four-point probe method, is an impedance measurement technique used to measure low resistance. It uses separate electrodes for current and voltage sensing, and can perform more accurate measurements compared to traditional two-terminal (2T) sensing. It uses separate current and voltage electrodes, eliminating the impedance of wiring and contact resistance.

[0055] Figure 2 This is a flowchart illustrating a method for detecting semiconductor structures in this disclosure according to an exemplary embodiment. Figure 3 This is a schematic diagram illustrating the detection method according to an exemplary embodiment, which integrates... Figure 2 and Figure 3 As shown, the detection method includes:

[0056] In step S100, a preset voltage is applied to both ends of the semiconductor structure 600 through the first detection circuit 400 to obtain the current value flowing through the semiconductor structure 600.

[0057] In step S200, a preset current is applied to both ends of the semiconductor structure 600 through the second detection circuit 500 to obtain the voltage value across the semiconductor structure 600.

[0058] Step S300: Determine the resistance value of semiconductor structure 600 based on the voltage and current values.

[0059] The detection method provided in this disclosure uses different detection circuits to detect the current value flowing through the semiconductor structure and the voltage value across the semiconductor structure, thereby determining the resistance value of the semiconductor structure. This can effectively eliminate the influence of contact resistance and improve the detection accuracy and reliability of the detection results.

[0060] In step S100, a preset voltage is applied to both ends of the semiconductor structure 600 by the first detection circuit 400, creating a voltage difference across the semiconductor structure 600. The current flowing through the semiconductor structure 600 can then be read by the ammeter 401. The first detection circuit 400 operates in voltage source mode, applying different voltages to both ends of the semiconductor structure 600 to create a voltage difference, thereby obtaining the current flowing through the semiconductor structure 600.

[0061] In step S200, a preset current is applied to both ends of the semiconductor structure 600 through the second detection circuit 500, and the voltage value across the semiconductor structure 600 can then be read using the voltmeter 501. For example, the second detection circuit 500 can employ a current source mode. For instance, by applying the same current to both ends of the semiconductor structure 600 through the second detection circuit 500 and then reading the voltage value across the semiconductor structure 600, and combining this reading with the voltage value obtained in step S100, the influence of contact resistance can be effectively eliminated, improving the reliability of the detection results.

[0062] In step S300, based on the current and voltage values ​​obtained by different detection circuits in steps S100 and S200, the influence of the contact resistance at both ends of the semiconductor structure 600 can be effectively eliminated, the resistance value of the semiconductor structure 600 can be determined, and the detection accuracy and reliability of the detection results can be improved.

[0063] It should be noted that the semiconductor structure detection method provided in this disclosure can be used to detect the resistance of a Pwell well, as well as the resistance of an Nwell well, thin film sheet resistance, etc.

[0064] In some embodiments, the first detection circuit 400 includes a first detection terminal 410 and a second detection terminal 420, wherein the first detection terminal 410 is located at the first end of the semiconductor structure 600 and the second detection terminal 420 is located at the second end of the semiconductor structure 600; during the detection process, a first voltage is applied to the first detection terminal 410 and a second voltage is applied to the second detection terminal 420, and the difference between the first voltage and the second voltage is a preset voltage. At this time, the current value flowing through the semiconductor structure 600 can be obtained by the ammeter 401.

[0065] In this embodiment, a first voltage is applied to the first end of the semiconductor structure 600 through the first detection terminal 410, and a second voltage is applied to the second end of the semiconductor structure 600 through the second detection terminal 420, thereby forming a voltage difference of a preset voltage across the two ends of the semiconductor structure 600, so that current flows through the semiconductor structure 600, and the current value flowing through the semiconductor structure 600 can be directly read by the ammeter 401.

[0066] According to some embodiments of this disclosure, the second detection circuit 500 includes a third detection terminal 510 and a fourth detection terminal 520, wherein the third detection terminal 510 is located at the first end of the semiconductor structure 600, and the fourth detection terminal 520 is located at the second end of the semiconductor structure 600. During the detection process, a first current is applied to the third detection terminal 510, and a second current is applied to the fourth detection terminal 520. The first current and the second current are the same, and the voltage value across the semiconductor structure 600 can be obtained by the voltmeter 501.

[0067] In this embodiment, a first current is applied to the first end of the semiconductor structure 600 through the third detection terminal 510, and a second current is applied to the second end of the semiconductor structure 600 through the fourth detection terminal 520. Since the first current and the second current are the same, the voltage value obtained at both ends of the semiconductor structure 600 at this time does not include the voltage corresponding to the contact resistance at both ends of the semiconductor structure 600, which can effectively eliminate the influence of the contact resistance on the resistance detection result of the semiconductor structure 600.

[0068] In some exemplary embodiments, both the first current and the second current are 0A.

[0069] In this embodiment, a current of 0A is simultaneously applied to both ends of the semiconductor structure 600. The voltage value measured by the voltmeter 501 is the voltage value after excluding the contact resistance of the third detection terminal 510 and the fourth detection terminal 520, which is the voltage value across the semiconductor structure 600. Based on this voltage value and the current value flowing through the semiconductor structure 600 obtained in step S100, the resistance value of the semiconductor structure 600 can be accurately calculated, effectively eliminating the influence of contact resistance and improving the reliability and accuracy of the detection results.

[0070] According to some exemplary embodiments of the present disclosure, the first detection end 410 includes a first probe 411, the second detection end 420 includes a second probe 421, and the first probe 411 and the second probe 421 are connected to the first source detection unit 430.

[0071] In this embodiment of the disclosure, the first detection circuit 400 applies a preset voltage to both ends of the semiconductor structure 600 in a voltage source mode. Exemplarily, its first source detection unit 430 is a voltage source detection unit.

[0072] The first source detection unit 430 applies a first voltage to the first end of the semiconductor structure 600 through the first probe 411 and applies a second voltage to the second end of the semiconductor structure 600 through the second probe 421, so that a voltage difference with a preset voltage is formed across the two ends of the semiconductor structure 600, and the current value flowing through the semiconductor structure 600 at this time can be read by the ammeter 401.

[0073] In some embodiments, the third detection end 510 includes a third probe 511, and the fourth detection end 520 includes a fourth probe 521. The third probe 511 and the fourth probe 521 are connected to the second source detection unit 530.

[0074] In this disclosure, the second detection circuit 500 adopts a current source mode, applying a preset current to both ends of the semiconductor structure 600. Exemplarily, its second source detection unit 530 is a current source detection unit.

[0075] The second source detection unit 530 applies a first current to the first end of the semiconductor structure 600 through the third probe 511 and a second current to the second end of the semiconductor structure 600 through the fourth probe 521. When the first current and the second current are the same, the voltage value across the semiconductor structure 600 is read by the voltmeter 501. This voltage value excludes the contact resistance of the third probe 511 and the fourth probe 521, effectively eliminating the influence of contact resistance on the resistance value of the semiconductor structure 600 and improving the accuracy and reliability of the detection results.

[0076] According to some embodiments of this disclosure, the resistance value of the semiconductor structure 600 is determined based on the ratio of the voltage value to the current value.

[0077] Based on the voltage value across the semiconductor structure 600 obtained by the second detection circuit 500, which is the voltage value after excluding contact resistance, the resistance value of the semiconductor structure 600 can be directly calculated according to R=U / I based on the voltage value obtained in step S200 and the current value flowing through the semiconductor structure 100 obtained in step S100. Moreover, the calculation result can eliminate the influence of contact resistance caused by the probe of the detection circuit, ensuring the accuracy and reliability of the detection result.

[0078] The semiconductor structure detection method provided in this disclosure obtains the current value flowing through the semiconductor structure 600 through a first detection circuit, and then obtains the voltage value across the semiconductor structure 600 under the same current through a second detection circuit. This method can eliminate the influence of contact resistance caused by the detection circuit, accurately calculate the resistance value of the semiconductor structure 600, and effectively improve the accuracy and reliability of the detection structure.

[0079] Based on relevant technologies and the detection methods disclosed herein, the inventors conducted comparative experiments using two detection methods for the same semiconductor structure: referring to... Figure 1 and Figure 3 The schematic diagram is shown. Table 1 shows the parameters for detecting semiconductor structures using related technologies, and Table 2 shows the parameters for detecting semiconductor structures using the detection method of this disclosure. Figure 4-1 and Figure 4-2 The RU curve is plotted based on two measurements using relevant technologies. Figure 5-1 and Figure 5-2 The RU curve is plotted for two tests performed according to the detection method of this disclosure. The horizontal axis represents voltage, and the vertical axis represents resistance.

[0080] Table 1. Parameters in the detection methods of related technologies

[0081] First detection probe 0V <![CDATA[I1’]]> Second detection probe -2～2V <![CDATA[I2’]]>

[0082] Reference Figure 1As shown in Table 1, two measurements were performed using related techniques. A first detection probe and a second detection probe were brought into contact with the two ends of the semiconductor structure to be tested, respectively. A voltage of 0V was applied to the first detection probe, and a voltage ranging from -2V to 2V was applied to the second detection probe. As the voltage applied to the second detection probe changed, the current values ​​I1' and I2' across the semiconductor structure were measured and recorded. Then, the resistance value of the semiconductor structure measured under different voltages at the second detection probe was calculated using R = U / I. Based on the calculation results, the RU curve of the tested semiconductor structure was plotted.

[0083] like Figure 4-1 The measurement results shown indicate that when the applied voltage of the first detection probe is 0V and the applied voltage of the second detection probe is -2 to 2V, the average resistance measured is 37375.34Ω. Figure 4-2 The measurement results shown indicate that when the applied voltage of the first detection probe is 0V and the applied voltage of the second detection probe is -2 to 2V, the average resistance measured is 37416.64Ω. Taking the average of the two measurements, the resistance of the semiconductor structure measured using related techniques is 37396Ω.

[0084] Table 2 Parameters in the detection method disclosed herein

[0085]

[0086] Reference Figure 3 The principle shown is illustrated, and the detection method provided in this disclosure is used to perform two tests on the same semiconductor structure according to the parameters shown in Table 2:

[0087] First, a voltage of 0V is applied to the first probe 411 via the first detection circuit 400 in voltage source mode. A voltage is then applied to the second probe 421 within the range of 0 to 2V. As the voltage applied to the second probe 421 changes, the currents I1 and I2 across the semiconductor structure are recorded, where I1 = I2. Next, a second detection circuit 500 in current source mode is used for detection. Simultaneously, a current of 0A is applied to both the third probe 511 and the fourth probe 521, and the voltages V3 and V4 across the semiconductor structure are measured. The voltage difference ΔV across the semiconductor structure is calculated as the absolute value of the difference between V3 and V4. Finally, according to R = U / I, the resistance of the semiconductor structure is calculated as ΔV / I1.

[0088] Based on the results of each test, a curve representing the resistance value measured as the voltage value of the second probe 421 changes is plotted, i.e., the RU curve, as shown below. Figure 5-1 and Figure 5-2 As shown. According to Figure 5-1 The test results shown indicate that the average resistance was 30333.11Ω; according to Figure 5-2The test results shown indicate that the average resistance value is 29721.56Ω. Taking the average of the two measurements, the resistance value of the semiconductor structure measured using the method disclosed herein is 30027.34Ω.

[0089] A comparison of the detection results of the present disclosure's detection method and related technologies shows that the error between the two measurement results reaches 24.54%, which is much greater than 5%. The detection method of the present disclosure effectively eliminates the influence of contact resistance generated at both ends of the semiconductor structure during the measurement process, resulting in more accurate and reliable measurement results.

[0090] A second aspect of this disclosure provides a semiconductor structure detection device. Figure 6 A schematic diagram of an exemplary embodiment of the detection device is shown, with reference to... Figure 3 and Figure 6 As shown, the detection device 700 includes a first acquisition module 710, a second acquisition module 720, and a determination module 730. Among them,

[0091] The first acquisition module 710 is configured to apply a preset voltage to both ends of the semiconductor structure 600 through the first detection circuit 400 to acquire the current value flowing through the semiconductor structure 600.

[0092] The second acquisition module 720 is configured to apply a preset current to both ends of the semiconductor structure 600 through the second detection circuit 500 to acquire the voltage value across the semiconductor structure 600.

[0093] The determination module 730 is configured to determine the resistance value of the semiconductor structure 600 based on the voltage and current values.

[0094] In this embodiment, the first acquisition module 710 acquires the current value flowing through the semiconductor structure 600 through the first detection circuit 400, and the second acquisition module 720 acquires the voltage value across the semiconductor structure 600 through the second detection circuit 500, thus eliminating the influence of contact resistance. Then, the determination module 730 determines the resistance value of the semiconductor structure 600 based on the acquisition results of the first acquisition module 710 and the second determination module 720, effectively eliminating the influence of contact resistance on the resistance value of the semiconductor structure 600 and improving the accuracy and reliability of the detection results.

[0095] In some embodiments, the first detection circuit 400 includes a first detection terminal 410 and a second detection terminal 420, wherein the first detection terminal 410 is located at a first end of the semiconductor structure 600 and the second detection terminal 420 is located at a second end of the semiconductor structure 600. In this case, the first acquisition module 710 is configured to apply a first voltage to the first detection terminal 410 and a second voltage to the second detection terminal 420, wherein the difference between the first voltage and the second voltage is a preset voltage.

[0096] In this embodiment, a first voltage is applied to the first end of the semiconductor structure 600 through the first detection terminal 410, and a second voltage is applied to the second end of the semiconductor structure 600 through the second detection terminal 420, thereby forming a voltage difference of a preset voltage across the two ends of the semiconductor structure 600, so that current flows through the semiconductor structure 600, and the current value flowing through the semiconductor structure 600 can be directly read by the ammeter 401.

[0097] Accordingly, in some embodiments, the second detection circuit 500 includes a third detection terminal 510 and a fourth detection terminal 520, wherein the third detection terminal 510 is located at the first end of the semiconductor structure 600, and the fourth detection terminal 520 is located at the second end of the semiconductor structure 600. In this embodiment, the second acquisition module 720 is configured to supply a first current to the third detection terminal 510 and a second current to the fourth detection terminal 520, wherein the first current and the second current are the same.

[0098] The same current is applied to both ends of the semiconductor structure 600 through the third detection terminal 510 and the fourth detection terminal 520 respectively. The voltage value across the semiconductor structure 600 is then obtained through the voltmeter 501. The obtained voltage value can effectively eliminate the influence of contact resistance and improve the reliability of the detection result.

[0099] In some embodiments, the first current and the second current are 0A.

[0100] In this embodiment, a 0A current is simultaneously applied to both ends of the semiconductor structure 600. The voltage value measured by the voltmeter 501 is the voltage value after excluding the contact resistance of the third detection terminal 510 and the fourth detection terminal 520, which is the voltage value across the semiconductor structure 600. Based on this voltage value, combined with the current value flowing through the semiconductor structure 600 obtained by the first acquisition module 710, the resistance value of the semiconductor structure 600 can be accurately calculated, effectively eliminating the influence of contact resistance and improving the reliability and accuracy of the detection results.

[0101] In some embodiments, the first detection end 410 includes a first probe 411, the second detection end 420 includes a second probe 421, and the first probe 411 and the second probe 421 are connected to the first source detection unit 430.

[0102] The first source detection unit 430 is in voltage source detection mode. It applies a first voltage to the first end of the semiconductor structure 600 through the first probe 411 and applies a second voltage to the second end of the semiconductor structure 600 through the second probe 421, so that a voltage difference with a preset voltage is formed between the two ends of the semiconductor structure 600. The current value flowing through the semiconductor structure 600 at this time can be read by the ammeter 401.

[0103] Accordingly, in some embodiments, the third detection end 510 includes a third probe 511, and the fourth detection end 520 includes a fourth probe 521. The third probe 511 and the fourth probe 521 are connected to the second source detection unit 530.

[0104] In this embodiment, the second source detection unit 530 operates in current source detection mode. A first current is applied to the first end of the semiconductor structure 600 via the third probe 511, and a second current is applied to the second end of the semiconductor structure 600 via the fourth probe 521. When the first and second currents are the same, the voltage value across the semiconductor structure 600 is read by the voltmeter 501. This voltage value excludes the contact resistance of the third probe 511 and the fourth probe 521, effectively eliminating the influence of contact resistance on the resistance of the semiconductor structure 600 and improving the accuracy and reliability of the detection results.

[0105] According to some embodiments of this disclosure, the determining module 730 is configured to determine the resistance value of the semiconductor structure based on the ratio of the voltage value to the current value.

[0106] Based on the voltage value across the semiconductor structure 600 obtained by the second acquisition module 720 through the second detection circuit 500, which is the voltage value after excluding contact resistance, the resistance value of the semiconductor structure 600 can be directly calculated according to R=U / I based on the voltage value obtained by the second acquisition module 720 and the current value flowing through the semiconductor structure 100 obtained by the first acquisition module 710. Moreover, the calculation result can eliminate the influence of contact resistance caused by the probe of the detection circuit, ensuring the accuracy and reliability of the detection result.

[0107] Figure 7 This is a block diagram illustrating a semiconductor structure detection device, namely a computer device 800, according to an exemplary embodiment. For example, the computer device 800 can be provided as a terminal device. (Refer to...) Figure 7 The computer device 800 includes a processor 810, the number of which can be set to one or more as needed. The computer device 800 also includes a memory 820 for storing instructions executable by the processor 810, such as application programs. The number of memory units can be set to one or more as needed. The stored application programs can be one or more. The processor 810 is configured to execute instructions to perform the methods described above.

[0108] Those skilled in the art will understand that embodiments of this disclosure can be provided as methods, apparatus (devices), or computer program products. Therefore, this disclosure can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this disclosure can take the form of a computer program product implemented on one or more computer-usable storage media containing computer-usable program code. Computer storage media include volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data), including but not limited to RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible by a computer. Furthermore, it is known to those skilled in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and can include any information delivery medium.

[0109] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is provided, such as a memory 820 including instructions, which can be executed by a processor 810 of a device 800 to perform the above-described method. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0110] A non-transitory computer-readable storage medium, when instructions in the storage medium are executed by a processor of a semiconductor-structured detection device, enables the detection device to perform the following operations:

[0111] A preset voltage is applied to both ends of the semiconductor structure through the first detection circuit to obtain the current value flowing through the semiconductor structure.

[0112] A preset current is applied to both ends of the semiconductor structure through the second detection circuit to obtain the voltage value across the semiconductor structure.

[0113] The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

[0114] This disclosure is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of this disclosure. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create a machine for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0115] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0116] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0117] In this disclosure, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase “comprising…” does not exclude the presence of additional identical elements in the article or device that includes said element.

[0118] Although preferred embodiments of the present disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.

[0119] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, the intent of this disclosure also includes these modifications and variations.

Claims

1. A method of detecting a semiconductor structure, characterized by, The detection method includes: A preset voltage is applied to both ends of the semiconductor structure through a first detection circuit to obtain the current value flowing through the semiconductor structure; the first detection circuit includes a first detection terminal and a second detection terminal, the first detection terminal is located at the first end of the semiconductor structure, and the second detection terminal is located at the second end of the semiconductor structure; a first voltage is applied to the first detection terminal, and a second voltage is applied to the second detection terminal, the difference between the first voltage and the second voltage is the preset voltage; A preset current is applied to both ends of the semiconductor structure through a second detection circuit to obtain the voltage value across the semiconductor structure. The second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at the first end of the semiconductor structure and the fourth detection terminal is located at the second end of the semiconductor structure. A first current is applied to the third detection terminal and a second current is applied to the fourth detection terminal, wherein both the first current and the second current are 0A. The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

2. The method of detecting a semiconductor structure according to claim 1, wherein The first detection end includes a first probe, and the second detection end includes a second probe. The first probe and the second probe are connected to the first source detection unit.

3. The method of claim 1, wherein The third detection end includes a third probe, and the fourth detection end includes a fourth probe. The third probe and the fourth probe are connected to the second source detection unit.

4. The method for detecting semiconductor structures according to claim 1, characterized in that, The resistance value of the semiconductor structure is determined based on the ratio of the voltage value to the current value.

5. An apparatus for detecting a semiconductor structure, characterized by The detection device includes: A first acquisition module is configured to apply a preset voltage to both ends of the semiconductor structure via a first detection circuit to acquire the current value flowing through the semiconductor structure; the first detection circuit includes a first detection terminal and a second detection terminal, the first detection terminal being located at a first end of the semiconductor structure and the second detection terminal being located at a second end of the semiconductor structure; the first acquisition module is configured to apply a first voltage to the first detection terminal and a second voltage to the second detection terminal, the difference between the first voltage and the second voltage being the preset voltage; The second acquisition module is configured to apply a preset current to both ends of the semiconductor structure through a second detection circuit to acquire the voltage value across the semiconductor structure. The second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at the first end of the semiconductor structure and the fourth detection terminal is located at the second end of the semiconductor structure. The second acquisition module is configured to pass a first current to the third detection terminal and a second current to the fourth detection terminal, wherein both the first current and the second current are 0A. The determination module is configured to determine the resistance value of the semiconductor structure based on the voltage value and the current value.

6. The apparatus of claim 5, wherein The first current and the second current are both 0A.

7. The semiconductor structure detection device according to claim 5, characterized in that, The first detection end includes a first probe, and the second detection end includes a second probe. The first probe and the second probe are connected to the first source detection unit.

8. The semiconductor structure detection device according to claim 5, characterized in that, The third detection end includes a third probe, and the fourth detection end includes a fourth probe. The third probe and the fourth probe are connected to the second source detection unit.

9. The semiconductor structure detection device according to claim 5, characterized in that, The determining module is configured to determine the resistance value of the semiconductor structure based on the ratio of the voltage value to the current value.

10. A semiconductor structure detection device, characterized in that, The detection equipment includes: processor; Memory used to store processor-executable instructions; The processor is configured to perform the following operations: A first detection circuit applies a preset voltage to both ends of the semiconductor structure to obtain the current value flowing through the semiconductor structure. The first detection circuit includes a first detection terminal and a second detection terminal, with the first detection terminal located at the first end of the semiconductor structure and the second detection terminal located at the second end of the semiconductor structure. A first acquisition module applies a first voltage to the first detection terminal and a second voltage to the second detection terminal, the difference between the first voltage and the second voltage being the preset voltage. A preset current is applied to both ends of the semiconductor structure through a second detection circuit to obtain the voltage value across the semiconductor structure. The second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at the first end of the semiconductor structure and the fourth detection terminal is located at the second end of the semiconductor structure. The second acquisition module supplies a first current to the third detection terminal and a second current to the fourth detection terminal, wherein both the first current and the second current are 0A. The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

11. A non-transitory computer-readable storage medium, characterized in that, When the instructions in the storage medium are executed by the processor of the semiconductor-structured detection device, the detection device is able to perform the following operations: A preset voltage is applied to both ends of the semiconductor structure through a first detection circuit to obtain the current value flowing through the semiconductor structure; the first detection circuit includes a first detection terminal and a second detection terminal, the first detection terminal is located at the first end of the semiconductor structure, and the second detection terminal is located at the second end of the semiconductor structure. The first acquisition module applies a first voltage to the first detection terminal and a second voltage to the second detection terminal, wherein the difference between the first voltage and the second voltage is the preset voltage; A preset current is applied to both ends of the semiconductor structure through the second detection circuit to obtain the voltage value across the semiconductor structure. The second detection circuit includes a third detection terminal and a fourth detection terminal, wherein the third detection terminal is located at the first end of the semiconductor structure and the fourth detection terminal is located at the second end of the semiconductor structure; The second acquisition module supplies a first current to the third detection terminal and a second current to the fourth detection terminal, wherein both the first current and the second current are 0A. The resistance value of the semiconductor structure is determined based on the voltage value and the current value.

Images