Method for controlling carrier concentration of semiconductor material and semiconductor power generation device

Abstract

This application relates to the field of semiconductor materials technology, and particularly to a method for regulating the carrier concentration of a semiconductor material and a semiconductor power generation device. The method includes the following steps: depositing a first friction layer on the surface of a semiconductor material layer; depositing a second friction layer on the side of the first friction layer facing away from the semiconductor material layer; the second friction layer and the first friction layer are capable of sliding relative to each other, and in the sliding direction, the size of the second friction layer is smaller than that of the first friction layer, so that the charge density of the second friction layer is greater than that of the first friction layer. This method achieves different electrostatic doping effects on the semiconductor material layer through electrostatic control, thereby regionally regulating the carrier concentration on the surface of the semiconductor material layer.

Description

Technical Field

[0001] This application relates to the field of semiconductor materials technology, and in particular to a method for regulating the carrier concentration of semiconductor materials and a semiconductor power generation device. Background Technology

[0002] The electrical conductivity of a material depends on the ability of its atoms to bind to their outermost electrons. Semiconductor materials offer advantages such as controllability, miniaturization, and energy efficiency, leading to the widespread application of optoelectronic devices made from them. Because electronic device materials require properties that allow for controlled conductivity, chemical doping is currently the most common method for controlling semiconductor conductivity.

[0003] Chemical doping involves introducing specific impurity elements into semiconductor materials to regulate the concentration of charge carriers, thereby controlling the conductivity of the semiconductor. Chemical doping introduces impurity elements into semiconductor materials, altering their chemical structure and thus affecting their performance. Summary of the Invention

[0004] This application discloses a method for regulating the carrier concentration of semiconductor materials and a semiconductor power generation device to solve the problem that existing chemical doping methods introduce impurity elements into semiconductor materials.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] In a first aspect, a method for regulating the carrier concentration of a semiconductor material is disclosed, the method comprising the following steps:

[0007] A first friction layer is deposited on the surface of the semiconductor material layer;

[0008] A second friction layer is deposited on the surface of the first friction layer that is away from the semiconductor material layer;

[0009] The second friction layer and the first friction layer can slide relative to each other, and in the sliding direction, the size of the second friction layer is smaller than the size of the first friction layer, so that the charge density of the second friction layer is greater than the charge density of the first friction layer.

[0010] In a second aspect, a semiconductor power generation device includes a semiconductor material layer, a first friction layer disposed on the surface of the semiconductor material layer, a second friction layer disposed on a side of the first friction layer opposite to the semiconductor material layer, and a first electrode and a second electrode connected to the semiconductor material layer; the first friction layer and the second friction layer are capable of sliding relative to each other, and in the sliding direction, the size of the second friction layer is smaller than the size of the first friction layer, so that the charge density of the second friction layer is greater than the charge density of the first friction layer; along the sliding direction, the first electrode and the second electrode are spaced apart to output current.

[0011] Furthermore, the semiconductor material layer includes a first semiconductor region and a second semiconductor region. In the plane in which the second friction layer slides, there is a gap between the first semiconductor region and the second semiconductor region. Both the first semiconductor region and the second semiconductor region are provided with a first electrode and a second electrode. The first electrode of the first semiconductor region and the second electrode of the second semiconductor region are connected, and the second electrode of the first semiconductor region and the first electrode of the second semiconductor region are connected, so that the semiconductor power generation device outputs direct current.

[0012] Furthermore, the gap dimension L is 0 < L ≤ 20 mm.

[0013] Furthermore, at least one diode is provided between the interconnected first and second electrodes to enable the semiconductor power generation device to output direct current.

[0014] Furthermore, the thickness of both the first friction layer and the second friction layer is 0.01 μm to 5000 μm; the thickness of the semiconductor material layer is 0.001 μm to 50000 μm.

[0015] Furthermore, the resistivity of the semiconductor material layer ranges from 0.01 kOhm·cm to 1000 kOhm·cm.

[0016] Furthermore, the material of the first friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6, or nylon-66.

[0017] Furthermore, the material of the second friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6, nylon-66, aluminum, copper, titanium, or iron.

[0018] Thirdly, the semiconductor power generation device of the second aspect is used as a speed sensor.

[0019] The beneficial effects of adopting the technical solution of this application are as follows:

[0020] The semiconductor material carrier concentration control method provided in this application involves a first friction layer and a second friction layer moving relative to each other, generating triboelectric charges through friction. The first and second friction layers each carry static charges of opposite signs and equal quantities. Because the size of the second friction layer is smaller than that of the first friction layer in the sliding direction, the charge density of the first friction layer is lower than that of the second friction layer. The net charge in the overlapping region of the first and second friction layers has the same polarity as the static charge of the second friction layer, thereby attracting charges of opposite polarity from the static charge of the second friction layer to the surface of the semiconductor material layer. Similarly, the net charge in the non-overlapping region of the first and second friction layers has the same polarity as the static charge of the first friction layer, thereby attracting charges of opposite polarity from the static charge of the first friction layer to the surface of the semiconductor material layer. Because the overlapping and non-overlapping regions have different polarities of net charge, different field effects are generated, resulting in different electrostatic doping effects on the semiconductor material layer, thus allowing for the regional control of the carrier concentration on the surface of the semiconductor material layer. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of a semiconductor material carrier concentration control method according to an embodiment of this application;

[0022] Figure 2 This is a schematic diagram of the structure of a semiconductor power generation device according to an embodiment of this application;

[0023] Figure 3 This is a circuit connection diagram of a semiconductor power generation device according to an embodiment of this application;

[0024] Figure 4 This is a circuit connection diagram of a semiconductor power generation device according to another embodiment of this application;

[0025] Figure 5 This is a schematic diagram of the structure of a semiconductor power generation device with partitioned semiconductor material layers according to an embodiment of this application;

[0026] Figure 6 This is a schematic diagram of the structure and circuit connection of a semiconductor power generation device with partitioned semiconductor material layers according to an embodiment of this application;

[0027] Figure 7 This is a schematic diagram of the structure and circuit connection of a semiconductor power generation device including a diode and partitioned semiconductor material layers according to an embodiment of this application;

[0028] Figure 8 This is a circuit connection diagram of a semiconductor power generation device including four diodes according to one embodiment of this application;

[0029] Figure 9This is a circuit connection diagram of a semiconductor power generation device including four diodes according to another embodiment of this application;

[0030] Figure 10 This is a diagram showing the current and voltage output of the semiconductor power generation device when the second friction layer in Embodiment 1 of this application undergoes variable speed motion.

[0031] Figure 11 The diagram shows the current and voltage output of the semiconductor power generation device when the second friction layer in Embodiment 1 of this application moves at varying speeds and at constant speeds.

[0032] Figure 12 This is a current output diagram of the semiconductor power generation device in Embodiment 2 of this application;

[0033] Figure 13 This is a current output diagram of the semiconductor power generation device in Embodiment 3 of this application;

[0034] Figure 14 This is a graph showing the relationship between the movement speed of the second friction layer and the voltage in the semiconductor power generation device of Embodiment 3 of this application;

[0035] Figure 15 This is a graph showing the relationship between the movement speed of the second friction layer of the semiconductor power generation device in Embodiment 3 of this application and the current.

[0036] Reference numerals: 100 - Semiconductor material layer; 110 - First semiconductor region; 120 - Second semiconductor region; 200 - First friction layer; 300 - Second friction layer; 400 - First electrode; 500 - Second electrode; 600 - Rotating body; 700 - Diode;

[0037] 01-Gap. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0039] The application scenarios described in this application are for the purpose of more clearly illustrating the technical solutions of this application, and do not constitute a limitation on the technical solutions provided in this application. Those skilled in the art will understand that with the emergence of new application scenarios, the technical solutions provided in this application are also applicable to similar technical problems. In the description of this application, unless otherwise stated, "multiple" means two or more.

[0040] The most common method for regulating the conductivity of semiconductors is chemical doping. Chemical doping introduces impurity elements into semiconductor materials, which changes the chemical structure of the semiconductor materials and thus affects the performance of the materials.

[0041] In view of this, this application provides a method for regulating the carrier concentration of a semiconductor material, the method comprising the following steps:

[0042] A first friction layer is deposited on the surface of the semiconductor material layer;

[0043] A second friction layer is deposited on the surface of the first friction layer that is away from the semiconductor material layer;

[0044] The second friction layer and the first friction layer can slide relative to each other, and in the sliding direction, the size of the second friction layer is smaller than the size of the first friction layer, so that the charge density of the second friction layer is greater than the charge density of the first friction layer.

[0045] Figure 1 This is a schematic diagram illustrating a semiconductor material carrier concentration control method according to an embodiment of this application. (Refer to...) Figure 1 When the first friction layer 200 and the second friction layer 300 move relative to each other, they generate electric charge through friction. The first friction layer 200 and the second friction layer 300 each carry static charges of opposite signs and equal quantities. Because the size of the second friction layer 300 is smaller than that of the first friction layer 200 in the sliding direction, the charge density of the first friction layer 200 is less than that of the second friction layer 300. The net charge of the overlapping area of ​​the first friction layer 200 and the second friction layer 300 has the same polarity as the static charge of the second friction layer 300, thereby attracting charges of opposite polarity to the static charge of the second friction layer 300 in the semiconductor material layer 100 to transfer to the surface of the semiconductor material layer 100. The net charge of the non-overlapping area of ​​the first friction layer 200 and the second friction layer 300 has the same polarity as the static charge of the first friction layer 200, thereby attracting charges of opposite polarity to the static charge of the first friction layer 200 in the semiconductor material layer 100 to transfer to the surface of the semiconductor material layer 100. Because overlapping and non-overlapping regions have net charges of different polarities, they generate different field effects and exert different electrostatic doping effects on the semiconductor material layer 100, thereby regionally controlling the carrier concentration on the surface of the semiconductor material layer 100. This control method can controllably and reversibly change the carrier concentration of the semiconductor material through electrostatic doping without introducing impurities and disorder into the semiconductor material.

[0046] Understandably, when the first and second friction layers generate static electricity through relative motion, the layer with weaker electron-binding ability loses electrons and becomes positively charged, while the layer with stronger electron-binding ability gains electrons and becomes negatively charged. Therefore, the first and second friction layers should be made of materials with different electron-binding abilities.

[0047] Preferably, the first friction layer is a non-conductive material layer, thereby avoiding charge transfer between the first friction layer and the semiconductor material layer.

[0048] Specifically, the material of the first friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6, or nylon-66.

[0049] In one alternative embodiment, the material of the second friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6, nylon-66, aluminum, copper, titanium, or iron.

[0050] In this application, the shape of the semiconductor material layer is not limited. Specifically, the semiconductor material layer may be rectangular, triangular, or elliptical, etc.

[0051] Similarly, the shapes of the first and second friction layers can also be rectangles, triangles, ellipses, etc.

[0052] Based on the same inventive concept, this application also provides a semiconductor power generation device. Figure 2 This is a schematic diagram of the structure of a semiconductor power generation device according to an embodiment of this application, with reference to... Figure 2 The semiconductor power generation device includes a semiconductor material layer 100, a first friction layer 200 disposed on the surface of the semiconductor material layer 100, a second friction layer 300 disposed on the surface of the first friction layer 200 facing away from the semiconductor material layer 100, and a first electrode 400 and a second electrode 500 connected to the semiconductor material layer 100. The first friction layer 200 and the second friction layer 300 are slidable relative to each other, and in the sliding direction, the size of the second friction layer 300 is smaller than the size of the first friction layer 200, so that the charge density of the second friction layer 300 is greater than the charge density of the first friction layer 200. Along the sliding direction, the first electrode 400 and the second electrode 500 are spaced apart to output current.

[0053] The first electrode 400 and the second electrode 500 can be disposed on the surface of the semiconductor material layer 100 facing the first friction layer 200, or on the side of the semiconductor material layer 100, or buried inside the semiconductor material layer 100.

[0054] When the first electrode 400 and the second electrode 500 can be disposed on the surface of the semiconductor material layer 100 facing the first friction layer 200, specifically, the entire surface of the first friction layer 200 facing away from the second friction layer 300 abuts against the semiconductor material layer 100.

[0055] Alternatively, a portion of the surface of the first friction layer 200 facing away from the second friction layer 300 abuts against the semiconductor material layer 100, and another portion abuts against the first electrode 400 and / or the second electrode 500.

[0056] It is understandable that the sliding direction of the second friction layer will affect the current direction, and the sliding speed of the second friction layer will affect the magnitude of the output current.

[0057] Figure 3 This is a circuit connection diagram of a semiconductor power generation device according to an embodiment of this application. Figure 4 This is a circuit connection diagram of a semiconductor power generation device according to another embodiment of this application, referring to... Figure 4 , refer to Figure 3 and Figure 4 The second friction layer 300 of the semiconductor power generation device moves in a circular motion away from the surface of the first friction layer 200 away from the semiconductor material layer 100. The semiconductor material layer 100 is divided into region S1 and region S2 by the line connecting the first electrode 400 and the second electrode 500. When the second friction layer 300 moves clockwise in region S1, the current flows from the second electrode 500 to the first electrode 400. When the second friction layer 300 moves clockwise in region S2, the current flows from the first electrode 400 to the second electrode 500.

[0058] Figure 5 This is a schematic diagram of the structure of a semiconductor power generation device with partitioned semiconductor material layers according to an embodiment of this application. Figure 6 This is a schematic diagram of the structure and circuit connection of a semiconductor power generation device with partitioned semiconductor material layers according to an embodiment of this application, with reference to... Figure 5 and Figure 6The semiconductor material layer 100 includes a first semiconductor region 110 and a second semiconductor region 120. In the plane where the second friction layer 300 slides, a gap 01 is provided between the first semiconductor region 110 and the second semiconductor region 120. The first semiconductor region 110 and the second semiconductor region 120 are each provided with a first electrode 400 and a second electrode 500. The first electrode 400 of the first semiconductor region 110 and the second electrode 500 of the second semiconductor region 120 are connected, and the second electrode 500 of the first semiconductor region 110 and the first electrode 400 of the second semiconductor region 120 are connected, so that the semiconductor power generation device outputs direct current.

[0059] The first electrode 400 of the first semiconductor region 110 and the first electrode 400 of the second semiconductor region 120 are centrally symmetrical, and the second electrode 500 of the first semiconductor region 110 and the second electrode 500 of the second semiconductor region 120 are centrally symmetrical. Within the first semiconductor region 110 and the second semiconductor region 120, the second friction layer 300 moves from the first electrode 400 to the second electrode 500, and the second friction layer 300 gradually approaches the second electrode 500, thereby enabling the semiconductor power generation device to output direct current.

[0060] Continue to refer to Figure 6 The size L of the gap 01 is 0 < L ≤ 20 mm. Specifically, the gap 01 can be 1 mm, 3 mm, 5 mm, 7 mm, 10 mm, 13 mm, 16 mm or 20 mm.

[0061] It is understood that the application does not limit the movement trajectory of the second friction layer. Specifically, the second friction layer can move along a straight line or along a curve, such as an arc.

[0062] Continue to refer to Figure 5 The semiconductor power generation device also includes a rotating body 600 coaxially disposed with the semiconductor material layer 100. The rotating body 600 is used to drive the second friction layer 300 to perform circular motion on the surface of the first friction layer 200. Specifically, the rotating body 600 is disposed on the side of the first friction layer 200 away from the semiconductor material layer 100, and the second friction layer 300 is disposed on the surface of the rotating body 600 facing the first friction layer 200, so that the second friction layer 300 and the first friction layer 200 abut against each other. The rotating body 600 can rotate around the center, thereby driving the second friction layer 300 and the first friction layer 200 to slide relative to each other.

[0063] In the semiconductor power generation device with the above structure, when the second friction layer 300 slides out from the first semiconductor region 110 and slides to the second semiconductor region 120, a reverse current may be generated. In order to ensure that the semiconductor power generation device always outputs direct current, in the semiconductor power generation device of this application embodiment, at least one diode 700 is provided between the interconnected first electrode 400 and second electrode 500.

[0064] Figure 7 This is a schematic diagram and circuit connection diagram of a semiconductor power generation device including a diode and partitioned semiconductor material layers according to an embodiment of this application, with reference to... Figure 7 A diode 700 is provided between the second electrode 500 of the first semiconductor region 110 and the first electrode 400 of the second semiconductor region 120, so that the semiconductor power generation device always outputs DC power.

[0065] When the semiconductor material layer 100 is a continuous material layer, at least two diodes 700 are provided between the interconnected first electrode 400 and second electrode 500 so that the semiconductor power generation device with the above structure can output direct current. Figure 8 This is a circuit connection diagram of a semiconductor power generation device including four diodes according to one embodiment of this application. Figure 9 This is a circuit connection diagram of a semiconductor power generation device including four diodes according to another embodiment of this application, referring to... Figure 8 and Figure 9 Four 700 diodes form a bridge rectifier circuit, which rectifies the current and converts AC to DC.

[0066] The materials of the first and second electrodes include, but are not limited to, platinum, gold, silver, nickel, copper, or aluminum.

[0067] In one optional embodiment, the thickness of both the first friction layer and the second friction layer is 0.01 μm to 5000 μm. The thinner the first and second friction layers, the more obvious the electrostatic control effect and the larger the output current.

[0068] In one optional embodiment, the thickness of the semiconductor material layer is 0.001 μm to 50000 μm. The thinner the semiconductor material layer, the more pronounced the electrostatic control effect and the greater the output current.

[0069] In one optional embodiment, the resistivity of the semiconductor material layer ranges from 0.01 kOhm·cm to 1000 kOhm·cm. Preferably, the resistivity of the semiconductor material layer is greater than or equal to 100 kOhm·cm; the higher the resistivity, the higher the output voltage of the semiconductor power generation device.

[0070] The semiconductor material layer includes, but is not limited to, inorganic semiconductor materials, organic semiconductor materials, or two-dimensional semiconductor materials.

[0071] Specifically, inorganic semiconductor materials can be silicon, germanium, gallium arsenide, indium phosphide, gallium nitride, aluminum nitride, silicon carbide, cadmium sulfide, or zinc oxide; organic semiconductor materials can be polythiophene, polypyrrole, polyphenylene, or polyaniline; and two-dimensional semiconductor materials can be molybdenum disulfide, graphene, tungsten disulfide, selenium disulfide, or black scale.

[0072] Based on the same inventive concept, this application also provides the use of a semiconductor power generation device as a speed sensor, which can be used to monitor the movement speed and direction of the second friction layer.

[0073] The semiconductor power generation device of this application will be further described in detail below with reference to specific embodiments.

[0074] Example 1

[0075] This embodiment is a semiconductor power generation device, see reference. Figure 2 The semiconductor power generation device includes a semiconductor material layer, a first friction layer disposed on the surface of the semiconductor material layer, a second friction layer disposed on the surface of the first friction layer opposite to the semiconductor material layer, and a first electrode and a second electrode connected to the semiconductor material layer. Specifically, the semiconductor material layer is a 100mm*40mm*0.5mm silicon wafer, the first friction layer is an 80mm*40mm*0.08mm polytetrafluoroethylene (PTFE) film, the second friction layer is a 30*30cm nylon film, and both the first and second electrodes are copper electrodes. The silicon wafer can be disposed on the surface of a 100mm*60mm acrylic sheet, and the nylon film can be disposed on the surface of a 30*30cm acrylic sheet. The acrylic sheet is used to support the silicon wafer or the nylon film.

[0076] The resistivity of the silicon wafer is greater than 100 kΩ·cm. Before use, the silicon wafer is ultrasonically cleaned sequentially with acetone, ethanol, and deionized water. After the PTFE film is attached to the silicon wafer, it is covered by a photomask, and then two copper metal electrodes are magnetron sputtered onto the silicon surface.

[0077] The nylon membrane slides back and forth in a straight line on the surface of the PTFE membrane, with a straight distance of 50cm.

[0078] Figure 10 This is a diagram showing the current and voltage output of the semiconductor power generation device when the second friction layer in Embodiment 1 of this application undergoes variable speed motion. Figure 11 The diagram shows the current and voltage output of the semiconductor power generation device during the variable speed and uniform speed motion of the second friction layer in Embodiment 1 of this application, with reference to... Figure 10 and Figure 11When the sliding speed of the nylon film increases, the output current and voltage increase accordingly. When the sliding speed of the nylon film is constant, the magnitude of the output current and voltage remains unchanged. In addition, when the nylon film slides in opposite directions on the PTFE film surface, the output current of the semiconductor power generation device is in the opposite direction.

[0079] Example 2

[0080] This embodiment is a semiconductor power generation device, see reference. Figure 5 and Figure 6 The semiconductor material layer includes a first semiconductor region and a second semiconductor region. The semiconductor material layer is circular with a diameter of 10cm and is disposed on the surface of an acrylic plate of the same size. The semiconductor material layer is a silicon wafer. In the plane in which the second friction layer slides, there is a gap of 0.1mm between the first semiconductor region and the second semiconductor region. The second friction layer is a 30cm*30cm polyamide layer.

[0081] The second friction layer moves in a circular motion on the surface of the first friction layer. Figure 12 The current output diagram of the semiconductor power generation device in Embodiment 2 of this application is shown in the figure. Figure 12 When the second friction layer slides from the first semiconductor region to the second semiconductor region, the direction of the current output by the semiconductor power generation device will change.

[0082] Example 3

[0083] This embodiment is a semiconductor power generation device, whose structure is the same as that of the semiconductor power generation device in Embodiment 2. The difference is that a diode is provided between the second electrode of the first semiconductor region and the first electrode of the second semiconductor region in the semiconductor power generation device of Embodiment 3. Figure 13 The current output diagram of the semiconductor power generation device in Embodiment 3 of this application is shown in the figure. Figure 13 The fact that the semiconductor power generation device always outputs DC power indicates that by placing a diode between the second electrode of the first semiconductor region and the first electrode of the second semiconductor region, the DC output of the semiconductor power generation device in Embodiment 2 can be achieved.

[0084] Figure 14 This is a graph showing the relationship between the movement speed and voltage of the second friction layer in the semiconductor power generation device of Embodiment 3 of this application, with reference to... Figure 14 As the speed of the second friction layer increases, the output voltage of the semiconductor power generation device also increases.

[0085] Figure 15 This is a graph showing the relationship between the movement speed and current of the second friction layer in the semiconductor power generation device of Embodiment 3 of this application, with reference to... Figure 15 As the speed of the second friction layer increases, the output current of the semiconductor power generation device also increases.

[0086] Reference Figure 14 and Figure 15 The semiconductor power generation device in Example 3 can also be used as a speed sensor to monitor the speed and direction of movement of the second friction layer.

[0087] The output voltage and current of the semiconductor power generation devices in embodiments 1-3 above are detected by Keithley 6517b. The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for controlling the carrier concentration of a semiconductor material, characterized in that, Includes the following steps: A first friction layer is deposited on the surface of the semiconductor material layer; A second friction layer is deposited on the surface of the first friction layer that is away from the semiconductor material layer; The second friction layer and the first friction layer can slide relative to each other, and in the sliding direction, the size of the second friction layer is smaller than the size of the first friction layer, so that the charge density of the second friction layer is greater than the charge density of the first friction layer.

2. A semiconductor power generation device, characterized in that, It includes a semiconductor material layer, a first friction layer disposed on the surface of the semiconductor material layer, a second friction layer disposed on the surface of the first friction layer facing away from the semiconductor material layer, and a first electrode and a second electrode connected to the semiconductor material layer; The first friction layer and the second friction layer can slide relative to each other, and in the sliding direction, the size of the second friction layer is smaller than the size of the first friction layer, so that the charge density of the second friction layer is greater than the charge density of the first friction layer; Along the sliding direction, the first electrode and the second electrode are spaced apart to output current.

3. The semiconductor power generation device according to claim 2, characterized in that, The semiconductor material layer includes a first semiconductor region and a second semiconductor region. In the plane in which the second friction layer slides, there is a gap between the first semiconductor region and the second semiconductor region. The first semiconductor region and the second semiconductor region are each provided with a first electrode and a second electrode. The first electrode of the first semiconductor region and the second electrode of the second semiconductor region are connected, and the second electrode of the first semiconductor region and the first electrode of the second semiconductor region are connected, so that the semiconductor power generation device outputs direct current.

4. The semiconductor power generation device according to claim 3, characterized in that, The dimension L of the gap is 0 < L ≤ 20 mm.

5. The semiconductor power generation device according to any one of claims 2-4, characterized in that, At least one diode is provided between the first electrode and the second electrode that are connected to each other, so that the semiconductor power generation device outputs direct current.

6. The semiconductor power generation device according to any one of claims 2-4, characterized in that, The thicknesses of both the first friction layer and the second friction layer are 0.01 μm to 5000 μm; The thickness of the semiconductor material layer is 0.001 μm to 50000 μm.

7. The semiconductor power generation device according to any one of claims 2-4, characterized in that, The resistivity of the semiconductor material layer ranges from 0.01 kOhm·cm to 1000 kOhm·cm.

8. The semiconductor power generation device according to any one of claims 2-4, characterized in that, The material of the first friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6 or nylon-66.

9. The semiconductor power generation device according to any one of claims 2-4, characterized in that, The material of the second friction layer is selected from at least one of perfluoroethylene-propylene copolymer, polytetrafluoroethylene, polydimethylsiloxane, polyvinyl chloride, polyimide, polypropylene, polyethylene, polyvinylidene fluoride, polyacrylonitrile, nitrile rubber, polyurethane, polyethylene terephthalate, sponge, fur, cotton, paper, nylon-6, nylon-66, aluminum, copper, titanium, or iron.

10. Use of the semiconductor power generation device as a speed sensor according to any one of claims 2-9.

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