Anti-static vertical structure LED chip and manufacturing method thereof

By setting an unintentional doping layer and an electrostatic discharge channel in the vertical structure LED chip, the problem of insufficient antistatic capability of the chip is solved, achieving higher antistatic capability and light extraction efficiency, and protecting the integrity of the chip.

CN116504893BActive Publication Date: 2026-06-19XIAMEN CHANGELIGHT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIAMEN CHANGELIGHT CO LTD
Filing Date
2023-06-14
Publication Date
2026-06-19

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Abstract

This invention provides an antistatic vertical structure LED chip and its manufacturing method. By setting an unintentional doping layer, the lattice mismatch of the vertical structure LED chip is reduced. Taking advantage of its high resistance and background charge carrier characteristics, an electrostatic discharge channel is formed by a conductive substrate, a metal bonding layer, a first type semiconductor layer, an unintentional doping layer, and a first electrode for reverse voltage protection of the vertical structure LED chip, thereby improving the antistatic capability of the vertical structure LED chip. The process is simple and convenient, and easy to mass-produce.
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