Electronic device

Abstract

An electronic device includes a hysteresis circuit, a voltage divider circuit, a control circuit, and a discharge resistor. The hysteresis circuit has a first threshold voltage and a second threshold voltage, and is configured to generate a hysteresis voltage based on an output voltage at an output node. The voltage divider circuit is configured to generate a divided voltage based on the output voltage and the hysteresis voltage. The control circuit has a reference voltage and is configured to monitor the divided voltage. If the divided voltage is lower than the reference voltage, the control circuit is configured to perform a discharge operation on the output voltage at the output node via the discharge resistor.

Description

Technical Field

[0001] This invention relates to an electronic device, and more particularly to an electronic device with a fast discharge function. Background Technology

[0002] In traditional electronic devices, an output capacitor is typically coupled to a discharge resistor. If the resistance of this discharge resistor is too high, the discharge speed of the electronic device will be too slow; conversely, if the resistance of this discharge resistor is too low, it will often lead to excessive non-ideal losses in the electronic device. In view of this, it is necessary to propose a completely new solution to overcome the problems faced by traditional technologies. Summary of the Invention

[0003] In a preferred embodiment, the present invention provides an electronic device comprising: a hysteresis circuit having a first critical potential and a second critical potential, wherein the hysteresis circuit generates a hysteresis potential based on an output potential at an output node; a voltage divider circuit generating a voltage divider potential based on the output potential and the hysteresis potential; a discharge resistor; and a control circuit having a reference potential and monitoring the voltage divider potential, wherein if the voltage divider potential is lower than the reference potential, the control circuit performs a discharge operation on the output potential at the output node via the discharge resistor.

[0004] In some embodiments, if the voltage divider potential is higher than or equal to the reference potential, the control circuit disables the discharge resistor and stops the discharge operation.

[0005] In some embodiments, if the output potential rises and reaches the first critical potential, the hysteresis potential will switch to a low logic level, and if the output potential falls and reaches the second critical potential, the hysteresis potential will switch to a high logic level.

[0006] In some embodiments, the hysteresis circuit includes: an operational amplifier having a positive input terminal, a negative input terminal, and an output terminal, wherein the positive input terminal of the operational amplifier is coupled to a first node, the negative input terminal of the operational amplifier is used to receive the output potential, and the output terminal of the operational amplifier is coupled to a second node to output the hysteresis potential; a first resistor having a first end and a second end, wherein the first end of the first resistor is coupled to the second node, and the second end of the first resistor is coupled to the first node; a second resistor having a first end and a second end, wherein the first end of the second resistor is coupled to the first node, and the second end of the second resistor is coupled to a third node; and a DC voltage source having a positive terminal and a negative terminal, wherein the positive terminal of the DC voltage source is coupled to the third node, and the negative terminal of the DC voltage source is coupled to a ground potential.

[0007] In some embodiments, the voltage divider circuit includes: a diode having an anode and a cathode, wherein the anode of the diode is coupled to the second node to receive the hysteresis potential, and the cathode of the diode is coupled to a fourth node to output the voltage divider potential; a third resistor having a first terminal and a second terminal, wherein the first terminal of the third resistor is coupled to the output node to receive the output potential, and the second terminal of the third resistor is coupled to the fourth node; and a fourth resistor having a first terminal and a second terminal, wherein the first terminal of the fourth resistor is coupled to the fourth node, and the second terminal of the fourth resistor is coupled to the ground potential.

[0008] In some embodiments, the control circuit includes: a potential comparator that compares the voltage divider potential with the reference potential, wherein if the voltage divider potential is lower than the reference potential, the potential comparator is coupled to a fifth node to the ground potential, and if the voltage divider potential is higher than or equal to the reference potential, the potential comparator is not coupled to the fifth node to the ground potential.

[0009] In some embodiments, the control circuit further includes: a fifth resistor having a first end and a second end, wherein the first end of the fifth resistor is coupled to a supply node to receive a supply potential, and the second end of the fifth resistor is coupled to the fifth node; and a sixth resistor having a first end and a second end, wherein the first end of the sixth resistor is coupled to the supply node, and the second end of the sixth resistor is coupled to a sixth node.

[0010] In some embodiments, the control circuit further includes: a first transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the first transistor is coupled to the fifth node, the first terminal of the first transistor is coupled to the ground potential, and the second terminal of the first transistor is coupled to the sixth node.

[0011] In some embodiments, the control circuit further includes: a second transistor having a control terminal, a first terminal, and a second terminal, wherein the control terminal of the second transistor is coupled to the sixth node, the first terminal of the second transistor is coupled to the ground potential, and the second terminal of the second transistor is coupled to a seventh node; wherein the discharge resistor has a first terminal and a second terminal, the first terminal of the discharge resistor is coupled to the output node, and the second terminal of the discharge resistor is coupled to the seventh node.

[0012] In some embodiments, the first transistor and the second transistor are each an N-type metal-oxide-semiconductor field-effect transistor (MOSFET). Attached Figure Description

[0013] Figure 1 This is a schematic diagram showing an electronic device according to an embodiment of the present invention.

[0014] Figure 2 This is a hysteresis curve diagram showing the hysteresis circuit according to an embodiment of the present invention.

[0015] Figure 3 This is a schematic diagram showing an electronic device according to an embodiment of the present invention.

[0016] Figure 4 This is a schematic diagram showing a hysteresis circuit according to an embodiment of the present invention.

[0017] Figure 5 This is a waveform diagram showing the potential of an electronic device according to an embodiment of the present invention.

[0018] [Symbol Explanation]

[0019] 100, 300: Electronic devices

[0020] 110, 310: Hysteresis circuit

[0021] 120, 320: Voltage divider circuit

[0022] 130, 330: Control circuit

[0023] 312: Operational Amplifier

[0024] 314: DC voltage source

[0025] 340: Potential comparator

[0026] 342: Equivalent Switcher

[0027] D1: Diode

[0028] M1: First transistor

[0029] M2: Second transistor

[0030] N1: First node

[0031] N2: Second node

[0032] N3: Third node

[0033] N4: Fourth Node

[0034] N5: Fifth Node

[0035] N6: Sixth Node

[0036] N7: Seventh Node

[0037] NOUT: Output node

[0038] NS: Supply Node

[0039] R1: First resistor

[0040] R2: Second resistor

[0041] R3: Third resistor

[0042] R4: Fourth resistor

[0043] R5: Fifth resistor

[0044] R6: Sixth resistor

[0045] RD: Discharge resistor

[0046] T1: First Time Point

[0047] T2: Second Time Point

[0048] T3: Third Time Point

[0049] T4: Fourth Time Point

[0050] V5: Potential of the fifth node

[0051] V6: Potential of the sixth node

[0052] VCC: Supply Potential

[0053] VD: Voltage divider potential

[0054] VE: Hysteresis potential

[0055] VOUT: Output potential

[0056] VREF: Reference potential

[0057] VSS: Grounding Potential

[0058] VTH1: First critical potential

[0059] VTH2: Second critical potential Detailed Implementation

[0060] To make the objectives, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below in detail with reference to the accompanying drawings.

[0061] Certain terms are used in the specification and claims to refer to specific elements. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same element. This specification and claims do not distinguish elements by differences in name, but rather by differences in function. The terms "comprising" and "including" used throughout the specification and claims are open-ended and should be interpreted as "including but not limited to". The term "generally" means that within an acceptable margin of error, those skilled in the art can solve the technical problem and achieve the basic technical effect within a certain margin of error. Furthermore, the term "coupled" in this specification includes any direct and indirect electrical connection means. Therefore, if a first device is described as coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device via other devices or connection means.

[0062] The following disclosure provides numerous different embodiments or examples to implement various features of this application. The following disclosure describes specific examples of the various components and their arrangements for simplification. Of course, these specific examples are not intended to be limiting. For example, if this disclosure describes a first feature formed on or above a second feature, it indicates that it may include embodiments where the first and second features are in direct contact, or embodiments where additional features are formed between the first and second features, so that the first and second features may not be in direct contact. Furthermore, the same reference numerals and / or designations may be repeated in different examples of the following disclosure. These repetitions are for simplification and clarity and are not intended to limit any specific relationship between the different embodiments and / or structures discussed.

[0063] Furthermore, spatially related terms, such as "below," "below," "lower," "above," "higher," and similar terms, are used to facilitate the description of the relationship between one element or feature and another(s) in the illustration. In addition to the orientations shown in the accompanying drawings, these spatially related terms are intended to encompass different orientations of the device in use or operation. The device may be rotated to different orientations (90 degrees or other orientations), and the spatially related terms used herein can be interpreted in the same way.

[0064] Figure 1 This is a schematic diagram showing an electronic device 100 according to an embodiment of the present invention. The electronic device 100 can be applied to a mobile device, such as a smartphone, a tablet computer, or a notebook computer. Figure 1 As shown, electronic device 100 includes: a hysteresis circuit 110, a voltage divider circuit 120, a control circuit 130, and a discharge resistor RD. Generally, electronic device 100 can be used to dynamically adjust a discharge operation with respect to an output potential VOUT at an output node NOUT. In some embodiments, the output node NOUT may be coupled to an output capacitor (not shown) of another circuit, but is not limited thereto.

[0065] The hysteresis circuit 110 has a first threshold voltage VTH1 and a second threshold voltage VTH2, wherein the first threshold voltage VTH1 and the second threshold voltage VTH2 can be used to define the hysteresis characteristics of the hysteresis circuit 110. For example, the first threshold voltage VTH1 may be higher than the second threshold voltage VTH2. The hysteresis circuit 110 can generate a hysteresis potential VE based on the output potential VOUT of NOUT at the output node.

[0066] Figure 2 This is a hysteresis curve diagram showing the hysteresis circuit 110 according to an embodiment of the present invention. For example, the hysteresis circuit 110 can also be referred to as a clockwise hysteresis circuit 110. Figure 2 In this embodiment, if the output potential VOUT rises and reaches the first critical potential VTH1, the hysteresis potential VE can be switched to a low logic level (e.g., a ground potential VSS). Conversely, if the output potential VOUT falls and reaches the second critical potential VTH2, the hysteresis potential VE can be switched to a high logic level (e.g., a supply potential VCC).

[0067] Voltage divider circuit 120 generates a voltage divider potential VD based on output potential VOUT and hysteresis potential VE. Control circuit 130 has a reference potential VREF and monitors voltage divider potential VD. If voltage divider potential VD is lower than reference potential VREF, control circuit 130 can perform a discharge operation on output potential VOUT at output node NOUT via discharge resistor RD. Conversely, if voltage divider potential VD is higher than or equal to reference potential VREF, control circuit 130 can disable discharge resistor RD and stop the aforementioned discharge operation. In this design, electronic device 100 can selectively use discharge resistor RD via a hysteresis mechanism, which not only accelerates the discharge speed of electronic device 100 but also simultaneously reduces non-ideal losses of electronic device 100.

[0068] The following embodiments will describe different configurations and detailed structural features of the electronic device 100. It must be understood that these figures and descriptions are merely illustrative and not intended to limit the scope of the invention.

[0069] Figure 3 This is a schematic diagram showing an electronic device 300 according to an embodiment of the present invention. Figure 3 and Figure 1 Similar. Figure 3 In this embodiment, the electronic device 300 has an output node NOUT and a supply node NS, and includes a hysteresis circuit 310, a voltage divider circuit 320, a control circuit 330, and a discharge resistor RD. The output node NOUT of the electronic device 300 can be used to receive an output potential VOUT, which may come from an output capacitor (not shown) of another circuit. Additionally, the supply node NS of the electronic device 300 can be used to receive a supply potential VCC, which can be used to provide power to the internal components of the electronic device 300.

[0070] The hysteresis circuit 310 is powered by a supply potential VCC and has a first critical potential VTH1 and a second critical potential VTH2. The hysteresis circuit 310 can generate a hysteresis potential VE based on the output potential VOUT. A hysteresis curve for the hysteresis circuit 310 can be described as previously... Figure 2 As described in the embodiments.

[0071] Figure 4 This is a schematic diagram showing a hysteresis circuit 310 according to an embodiment of the present invention. Figure 4In one embodiment, the hysteresis circuit 310 includes an operational amplifier (OP) 312, a first resistor R1, a second resistor R2, and a DC voltage source 314. The operational amplifier 312 has a positive input terminal, a negative input terminal, and an output terminal. The positive input terminal of the operational amplifier 312 is coupled to a first node N1, the negative input terminal of the operational amplifier 312 is used to receive an output potential VOUT, and the output terminal of the operational amplifier 312 is coupled to a second node N2 to output a hysteresis potential VE. The first resistor R1 has a first end and a second end, wherein the first end of the first resistor R1 is coupled to the second node N2, and the second end of the first resistor R1 is coupled to the first node N1. The second resistor R2 has a first end and a second end, wherein the first end of the second resistor R2 is coupled to the first node N1, and the second end of the second resistor R2 is coupled to a third node N3. The DC voltage source 314 has a positive electrode and a negative electrode, wherein the positive electrode of the DC voltage source 314 is coupled to the third node N3, and the negative electrode of the DC voltage source 314 is coupled to a ground potential VSS. In some embodiments, the first critical potential VTH1 and the second critical potential VTH2 of the hysteresis circuit 310 can be adjusted by changing the first resistor R1, the second resistor R2, and the relevant parameters of the DC voltage source 314.

[0072] Voltage divider circuit 320 includes a diode D1, a third resistor R3, and a fourth resistor R4. Diode D1 has an anode and a cathode, wherein the anode of diode D1 is coupled to a second node N2 to receive a hysteresis potential VE, and the cathode of diode D1 is coupled to a fourth node N4 to output a voltage divider potential VD. The third resistor R3 has a first terminal and a second terminal, wherein the first terminal of the third resistor R3 is coupled to an output node NOUT to receive an output potential VOUT, and the second terminal of the third resistor R3 is coupled to the fourth node N4. The fourth resistor R4 has a first terminal and a second terminal, wherein the first terminal of the fourth resistor R4 is coupled to the fourth node N4, and the second terminal of the fourth resistor R4 is coupled to a ground potential VSS.

[0073] The control circuit 330 includes a voltage comparator 340, a fifth resistor R5, a sixth resistor R6, a first transistor M1, and a second transistor M2. For example, the first transistor M1 and the second transistor M2 may each be an N-type metal-oxide-semiconductor field-effect transistor (MOSFET), but are not limited to this.

[0074] Potential comparator 340 compares a voltage divider potential VD with a reference potential VREF. If the voltage divider potential VD is lower than the reference potential VREF, the potential comparator 340 is coupled to a fifth node N5 to ground potential VSS. Conversely, if the voltage divider potential VD is higher than or equal to the reference potential VREF, the potential comparator 340 is not coupled to the fifth node N5 to ground potential VSS. In some embodiments, the potential comparator 340 includes an equivalent switch element 342, one end of which is coupled to the fifth node N5, and the other end of which is coupled to ground potential VSS. If the voltage divider potential VD is lower than the reference potential VREF, the equivalent switch element 342 will be turned on (i.e., it can approximate a short-circuit element). Conversely, if the voltage divider potential VD is higher than or equal to the reference potential VREF, the equivalent switch element 342 will be turned off (i.e., it can approximate an open-circuit element).

[0075] The fifth resistor R5 has a first terminal and a second terminal, wherein the first terminal of the fifth resistor R5 is coupled to the supply node NS to receive the supply potential VCC, and the second terminal of the fifth resistor R5 is coupled to the fifth node N5. The sixth resistor R6 has a first terminal and a second terminal, wherein the first terminal of the sixth resistor R6 is coupled to the supply node NS, and the second terminal of the sixth resistor R6 is coupled to a sixth node N6. The first transistor M1 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain), wherein the control terminal of the first transistor M1 is coupled to the fifth node N5, the first terminal of the first transistor M1 is coupled to the ground potential VSS, and the second terminal of the first transistor M1 is coupled to the sixth node N6.

[0076] The second transistor M2 has a control terminal (e.g., a gate), a first terminal (e.g., a source), and a second terminal (e.g., a drain). The control terminal of the second transistor M2 is coupled to the sixth node N6, the first terminal of the second transistor M2 is coupled to ground potential VSS, and the second terminal of the second transistor M2 is coupled to a seventh node N7. The discharge resistor RD has a first terminal and a second terminal. The first terminal of the discharge resistor RD is coupled to the output node NOUT, and the second terminal of the discharge resistor RD is coupled to the seventh node N7.

[0077] Figure 5 This is a waveform diagram showing the potential of the electronic device 300 according to an embodiment of the present invention. Please refer to it as well. Figure 3 , 5 To understand the operating principle of this invention.

[0078] Initially, the output potential VOUT gradually rises, but has not yet reached the first critical potential VTH1. Both the hysteresis potential VE and the voltage divider potential VD remain at a high logic level (assuming diode D1 is ideal and its cut-in voltage is 0V). Since the voltage divider potential VD is higher than the reference potential VREF, the equivalent switch 342 of the potential comparator 340 will be disconnected. At this time, one potential V5 at the fifth node N5 will be pulled up to the supply potential VCC to enable the first transistor M1, while one potential V6 at the sixth node N6 will be pulled down to the ground potential VSS to disable the second transistor M2.

[0079] At a first time point T1, the output potential VOUT rises and reaches the first critical potential VTH1, while the hysteresis potential VE switches from a high logic level to a low logic level. This causes diode D1 to be turned off and no longer affect the voltage divider potential VD. At this time, the relationship between the voltage divider potential VD and the output potential VOUT can be described by the following equation (1):

[0080]

[0081] Where “VD” represents the potential level of the voltage divider potential VD, “VOUT” represents the potential level of the output potential VOUT, “R3” represents the resistance value of the third resistor R3, and “R4” represents the resistance value of the fourth resistor R4.

[0082] At a second time point T2, the output potential VOUT and its associated voltage divider potential VD both begin to gradually decrease. Then, at a third time point T3, the voltage divider potential VD begins to fall below the reference potential VREF, so the equivalent switch 342 of the potential comparator 340 will switch from an off state to an on state. At this time, the potential V5 at the fifth node N5 will be pulled down to the ground potential VSS to disable the first transistor M1, while the potential V6 at the sixth node N6 will be pulled up to the supply potential VCC to enable the second transistor M2.

[0083] Finally, at a fourth time point T4, the output potential VOUT drops and reaches the second critical potential VTH2, while the hysteresis potential VE switches from a low logic level back to a high logic level. At this time, the voltage divider potential VD also switches from a low logic level back to a high logic level, enabling the first transistor M1 again and disabling the second transistor M2 again (similar to the initial state).

[0084] according to Figure 5 According to the measurement results, the control circuit 330 can only perform a discharge operation on the output potential VOUT at the output node NOUT via the discharge resistor RD when the second transistor M2 is enabled. Conversely, when the second transistor M2 is disabled, the discharge resistance value of the output node NOUT will approach infinity, and the aforementioned discharge operation will naturally stop. Under this design, during the charging operation (e.g., from the first time point T1 to the second time point T2), the output node NOUT of the electronic device 300 will have a larger discharge resistance value and a smaller non-ideal loss. In addition, during the discharging operation (e.g., from the third time point T3 to the fourth time point T4), the output node NOUT of the electronic device 300 will have a smaller discharge resistance value and a shorter discharge time. It should be noted that because the electronic device 300 does not need to use any central processing unit (CPU) or microcontroller unit (MCU), its overall manufacturing cost can be further reduced.

[0085] In some embodiments, the component parameters of the electronic device 100 (or 300) may be as follows: The first critical potential VTH1 may be approximately 11.5V. The second critical potential VTH2 may be approximately 1V. The resistance ratio of the third resistor R3 and the fourth resistor R4 may be 4.5. The resistance value of the fifth resistor R5 may be approximately 100KΩ. The resistance value of the sixth resistor R6 may be approximately 100KΩ. The resistance value of the discharge resistor RD may be between 1Ω and 10Ω, for example, approximately 6Ω. The supply potential VCC may be approximately 5V. The ground potential VSS may be approximately 0V. The reference potential VREF may be approximately 2V. It must be understood that the above component parameters are merely examples and can be fine-tuned according to different requirements.

[0086] This invention proposes a novel electronic device. According to actual measurement results, the electronic device designed above can achieve multiple advantages such as reducing non-ideal losses, increasing discharge speed, and saving manufacturing costs, making it very suitable for application in a wide variety of devices.

[0087] It is worth noting that the potential, current, resistance, inductance, capacitance, and other component parameters mentioned above are not limiting conditions of this invention. Designers can adjust these settings according to different needs. The electronic device of this invention is not limited to... Figure 1-5 The state illustrated. This invention may include only... Figure 1-5 Any one or more features of any one or more embodiments. In other words, not all illustrated features need to be implemented simultaneously in the electronic device of the present invention. Although embodiments of the present invention use metal-oxide-semiconductor field-effect transistors as examples, the present invention is not limited thereto, and those skilled in the art can use other types of transistors, such as junction field-effect transistors or fin field-effect transistors, without affecting the effects of the present invention.

[0088] The ordinal numbers in this specification and claims, such as "first," "second," "third," etc., are not sequential in any particular order; they are only used to distinguish between two different elements with the same name.

[0089] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the scope of the invention. Those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the appended claims.

Claims

1. An electronic device comprising: A hysteresis circuit has a first critical potential and a second critical potential, wherein the hysteresis circuit generates the hysteresis potential based on the output potential at the output node. The voltage divider circuit generates a voltage divider potential based on the output potential and the hysteresis potential. Discharge resistor; as well as The control circuit has a reference potential and monitors the voltage divider potential. If the voltage divider potential is lower than the reference potential, the control circuit performs a discharge operation on the output potential at the output node by means of the discharge resistor.

2. The electronic device of claim 1, wherein if the voltage divider potential is higher than or equal to the reference potential, the control circuit disables the discharge resistor and stops the discharge operation.

3. The electronic device of claim 1, wherein if the output potential rises and reaches the first critical potential, the hysteresis potential will switch to a low logic level, and if the output potential falls and reaches the second critical potential, the hysteresis potential will switch to a high logic level.

4. The electronic device of claim 1, wherein the hysteresis circuit comprises: An operational amplifier has a positive input terminal, a negative input terminal, and an output terminal, wherein the positive input terminal of the operational amplifier is coupled to a first node, the negative input terminal of the operational amplifier is used to receive the output potential, and the output terminal of the operational amplifier is coupled to a second node to output the hysteresis potential. A first resistor has a first end and a second end, wherein the first end of the first resistor is coupled to the second node, and the second end of the first resistor is coupled to the first node; A second resistor has a first end and a second end, wherein the first end of the second resistor is coupled to the first node, and the second end of the second resistor is coupled to a third node; as well as A DC voltage source has a positive terminal and a negative terminal, wherein the positive terminal of the DC voltage source is coupled to the third node, and the negative terminal of the DC voltage source is coupled to ground potential.

5. The electronic device of claim 4, wherein the voltage divider circuit comprises: A diode having an anode and a cathode, wherein the anode of the diode is coupled to the second node to receive the hysteresis potential, and the cathode of the diode is coupled to the fourth node to output the voltage divider potential; A third resistor has a first terminal and a second terminal, wherein the first terminal of the third resistor is coupled to the output node to receive the output potential, and the second terminal of the third resistor is coupled to the fourth node. as well as A fourth resistor has a first end and a second end, wherein the first end of the fourth resistor is coupled to the fourth node, and the second end of the fourth resistor is coupled to the ground potential.

6. The electronic device of claim 5, wherein the control circuit comprises: The voltage comparator compares the voltage divider potential with the reference potential. If the voltage divider potential is lower than the reference potential, the voltage comparator will couple the fifth node to the ground potential. If the voltage divider potential is higher than or equal to the reference potential, the voltage comparator will not couple the fifth node to the ground potential.

7. The electronic device of claim 6, wherein the control circuit further comprises: A fifth resistor has a first terminal and a second terminal, wherein the first terminal of the fifth resistor is coupled to a supply node to receive a supply potential, and the second terminal of the fifth resistor is coupled to the fifth node; as well as A sixth resistor has a first end and a second end, wherein the first end of the sixth resistor is coupled to the supply node, and the second end of the sixth resistor is coupled to the sixth node.

8. The electronic device of claim 7, wherein the control circuit further comprises: A first transistor has a control terminal, a first terminal, and a second terminal, wherein the control terminal of the first transistor is coupled to the fifth node, the first terminal of the first transistor is coupled to the ground potential, and the second terminal of the first transistor is coupled to the sixth node.

9. The electronic device of claim 8, wherein the control circuit further comprises: The second transistor has a control terminal, a first terminal, and a second terminal, wherein the control terminal of the second transistor is coupled to the sixth node, the first terminal of the second transistor is coupled to the ground potential, and the second terminal of the second transistor is coupled to the seventh node. The discharge resistor has a first end and a second end. The first end of the discharge resistor is coupled to the output node, and the second end of the discharge resistor is coupled to the seventh node.

10. The electronic device of claim 9, wherein the first transistor and the second transistor are each N-type metal-oxide-semiconductor field-effect transistors (MOSFETs).

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