Pickup method of semiconductor dies and pickup device of semiconductor dies

Abstract

A semiconductor die pickup method and a semiconductor die pickup device are provided. The semiconductor die pickup method raises a stage (20), pushes up a lower surface (12b) of a wafer (12), relatively moves the stage (20) with respect to the wafer (12) in a lateral direction in a manner that an adsorption surface (22a) of the stage (20) rubs the lower surface (12b) of the wafer (12), and causes initial peeling between a semiconductor die (15) and the wafer (12).

Description

Technical Field

[0001] The present invention relates to an initial peeling method for performing an initial peeling between a semiconductor die and a wafer before picking up a semiconductor die, and to the structure of a semiconductor die picking device for picking up a semiconductor die attached to the upper surface of a wafer. Background Technology

[0002] Semiconductor dies are manufactured by dicing 6-inch or 8-inch wafers into specified sizes. During dicing, to prevent the diced semiconductor dies from becoming scattered, a wafer is attached to the back side, and the wafer is cut from the surface side using a dicing machine or similar equipment. At this point, the wafer attached to the back side is cut to a certain extent but not completely severed, thus retaining the individual semiconductor dies. Then, the diced semiconductor dies are picked up one by one from the wafer and sent to the next process, such as die bonding.

[0003] As a method for picking up semiconductor dies from wafers, the following method is proposed: a wafer with semiconductor dies attached is fixed to a stage, a roller with multiple protrusions is rotated while the wafer is repeatedly lifted by the multiple protrusions, the semiconductor dies are peeled off from the wafer, and then the semiconductor dies are picked up with a suction nozzle (for example, see Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2003-224088 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] However, in existing picking methods, there are situations where the adhesion of the wafer fails to completely separate the semiconductor die from the wafer, resulting in picking errors where the semiconductor die cannot be picked up.

[0009] Therefore, the object of the present invention is to reduce semiconductor die picking errors in a semiconductor die picking device.

[0010] Technical means to solve the problem

[0011] The initial peeling method of the present invention performs initial peeling between a semiconductor die and a wafer before picking up a semiconductor die attached to the upper surface of a wafer. The initial peeling method includes: a preparation step, preparing a pickup device, the pickup device picking up the semiconductor die attached to the upper surface of the wafer, the pickup device including: a wafer holder for holding the wafer with the semiconductor die attached to its upper surface; and a stage including an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; and an initial peeling step, in which the stage is raised, the lower surface of the wafer is pushed up, and the stage is moved relative to the wafer in the lateral direction by rubbing the lower surface of the wafer with the adsorption surface of the stage, thereby performing initial peeling between the semiconductor die and the wafer.

[0012] Before picking up the semiconductor die, initial peeling is performed on the edge of the semiconductor die to be picked up in the initial peeling process to reduce the adhesion between the semiconductor die and the wafer, thereby reducing picking errors of the semiconductor die.

[0013] In the initial stripping method of the present invention, the initial stripping step may involve continuously moving the stage relative to the wafer, or it may involve pushing the lower surface of the wafer up by 3 mm to 5 mm.

[0014] Therefore, initial peeling can be effectively performed at the edge of the semiconductor die, thereby reducing the adhesion between the semiconductor die and the wafer and thus reducing picking errors of the semiconductor die.

[0015] In the initial stripping method of the present invention, the initial stripping process can be carried out by rubbing a portion or all of the area of ​​the lower surface of the wafer corresponding to the area of ​​the upper surface of the wafer to which the semiconductor die is attached, thereby moving the stage relative to the wafer in the lateral direction.

[0016] This causes an initial separation between the semiconductor die to be picked up and the wafer, thereby reducing adhesion.

[0017] In the initial peeling method of the present invention, the initial peeling process can be performed alternately and repeatedly as follows: a reciprocating process, in which the stage moves back and forth along a first transverse direction; and a reciprocating path changing process, in which the stage moves along a second transverse direction orthogonal to the first transverse direction, thereby changing the reciprocating movement path.

[0018] If the stage moves relative to the wafer in the lateral direction, initial peeling occurs between the edge of the semiconductor die and the wafer when the portion of the wafer to be picked up, which has a semiconductor die attached, is on the adsorption surface of the stage and when it leaves the adsorption surface of the stage. By moving the stage back and forth relative to the wafer, multiple initial peelings occur between the semiconductor die and the wafer, reducing the adhesion between the semiconductor die and the wafer, and thus reducing semiconductor die picking errors.

[0019] In the initial stripping method of the present invention, the wafer may be circular, the first transverse direction is the circumferential direction of the wafer, and the second transverse direction is the radial direction of the wafer.

[0020] When the wafer is circular, by moving the stage relative to the wafer along the circumferential direction, the number of movements in the second transverse direction can be reduced, and the initial separation between the semiconductor die and the wafer can be achieved in a simple way, thereby reducing the adhesion between the semiconductor die and the wafer.

[0021] In the initial peeling method of the present invention, the wafer may be circular. In the initial peeling process, after the stage moves laterally in a spiral shape from the outer periphery of the wafer toward the center or from the center toward the outer periphery, it moves laterally in a spiral shape from the center of the wafer toward the outer periphery or from the outer periphery toward the center.

[0022] When the wafer is circular, by moving the stage back and forth in a spiral motion relative to the wafer, the initial separation between the semiconductor die and the wafer can be effectively achieved through a simple action, thereby reducing the adhesion between the semiconductor die and the wafer.

[0023] The semiconductor die pickup device of the present invention picks up semiconductor dies attached to the upper surface of a wafer. The semiconductor die pickup device includes: a wafer holder for holding the wafer with the semiconductor die attached to its upper surface; a wafer holder drive unit for driving the wafer holder in the lateral direction; a stage including an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; a stage drive unit for driving the stage in the vertical direction; and a control unit for adjusting the operation of the wafer holder drive unit and the stage drive unit. The control unit raises the stage through the stage drive unit, pushing the lower surface of the wafer upwards. The stage moves relative to the wafer in the lateral direction by means of friction between the adsorption surface of the stage and the lower surface of the wafer.

[0024] As described above, with the stage raised and the lower surface of the wafer pushed up, the stage is moved laterally relative to the wafer by rubbing the lower surface of the wafer. This causes initial peeling of the edge of the semiconductor die to be picked up, reducing the adhesion between the semiconductor die and the wafer. Furthermore, by picking up the semiconductor die after reducing the adhesion, the picking error of the semiconductor die can be reduced.

[0025] The effects of the invention

[0026] This invention can reduce semiconductor die picking errors in semiconductor die picking devices. Attached Figure Description

[0027] Figure 1 This is a system diagram showing the structure of a semiconductor die pickup device according to an embodiment.

[0028] Figure 2 It means Figure 1 The flowchart shows the operation of the semiconductor die pickup device.

[0029] Figure 3 It means Figure 1 The illustration of the initial stripping process of the semiconductor die pick-up device is a cross-sectional view showing the state in which the lower surface of the wafer is pushed up to a first height H1 by the stage.

[0030] Figure 4 It means Figure 1 The diagram illustrating the initial stripping process of the semiconductor die pick-up device is a plan view showing the path of relative movement of the stage relative to the wafer.

[0031] Figure 5 It means Figure 3 The image shows an enlarged cross-sectional view of the first mode in which the semiconductor die in section A is peeled off from the wafer.

[0032] Figure 6 It means Figure 3 The enlarged cross-sectional view of the second mode showing the semiconductor die in section A being peeled off from the wafer.

[0033] Figure 7 It means in Figure 1 The diagram shows a cross-sectional view of a semiconductor die being picked up using a nozzle in a semiconductor die picking device.

[0034] Figure 8 It means Figure 1 The diagram illustrating the initial stripping process of the semiconductor die pick-up device is a plan view showing another path of relative movement of the stage relative to the wafer.

[0035] Figure 9 It means Figure 1 The diagram illustrating the initial stripping process of the semiconductor die pick-up device is a plan view showing another path of relative movement of the stage relative to the wafer.

[0036] [Explanation of Symbols]

[0037] 10: Wafer Holder

[0038] 11: Wafer

[0039] 12: Wafer

[0040] 12a: Upper surface

[0041] 12b: Lower surface

[0042] 13: Ring

[0043] 14: Gap

[0044] 15: Semiconductor die

[0045] 16: Expansion ring

[0046] 16a: Maintain surface

[0047] 16b: Flange

[0048] 18: Suction nozzle

[0049] 19: Suction hole

[0050] 20: Platform

[0051] 21: Cylindrical section

[0052] 22: Top plate

[0053] 22a: Adsorption surface

[0054] 23: Opening

[0055] 24: Adsorption pores

[0056] 25: Corner

[0057] 29: Moving Element Driven Department

[0058] 30: Moving Elements

[0059] 31: First jacking pin

[0060] 32: Second top pin

[0061] 61: Wafer Holder Driver Section

[0062] 62: Platform drive unit

[0063] 63: Suction nozzle drive unit

[0064] 64, 65: Vacuum valves

[0065] 70: Control Department

[0066] 71: CPU

[0067] 72: Memory

[0068] 75, 76: Initial stripping

[0069] 100: Pickup device Detailed Implementation

[0070] Hereinafter, the semiconductor die 15 pickup device 100 of the embodiment will be described with reference to the accompanying drawings. In the following description, the directions that are orthogonal to each other on the horizontal plane are respectively designated as the X direction and the Y direction, and the vertical direction is designated as the Z direction.

[0071] like Figure 1 As shown, the semiconductor die 15 pick-up device 100 (hereinafter referred to as pick-up device 100) of the embodiment includes a wafer holder 10, a stage 20, a nozzle 18, a wafer holder drive unit 61, a stage drive unit 62, a nozzle drive unit 63, a vacuum valve 64, a vacuum valve 65, a vacuum device 68, and a control unit 70.

[0072] The wafer holder 10 includes an annular expansion ring 16 with a flange and a pressure ring 17, holding a wafer 12 on its upper surface 12a with a semiconductor die 15 cut from a wafer 11 attached thereto. The wafer holder 10 moves along the transverse direction, i.e., the XY direction, via the wafer holder drive section 61.

[0073] Here, the wafer 12 with semiconductor dies 15 attached to its upper surface 12a is held by the wafer holder 10 in the following manner. The wafer 11 has the wafer 12 attached to its back side, and a metal ring 13 is mounted on the outer periphery of the wafer 12. During the dicing process, the wafer 11 is cut from the surface side using a dicing machine or the like to become individual semiconductor dies 15, creating gaps 14 between the individual semiconductor dies 15 during dicing. Even when the wafer 11 is cut, the wafer 12 is not cut, and each semiconductor die 15 is held by the wafer 12.

[0074] The lower surface 12b of the wafer 12, to which the semiconductor die 15 is attached, is placed in contact with the holding surface 16a of the expansion ring 16, and adjusted so that the position of the ring 13 is on the flange 16b of the expansion ring 16. Then, as... Figure 1As indicated by arrow 80, the ring 13 is pressed against the flange 16b of the expansion ring 16 from above by the pressure ring portion 17 and fixed to the flange 16b. Thus, the wafer 12 with the semiconductor die 15 attached to its upper surface 12a is held by the wafer holder 10. At this time, the lower surface 12b of the wafer 12 is fixed to the outer periphery of the holding surface 16a of the expansion ring 16.

[0075] A stage 20 is disposed on the lower surface of a wafer holder 10. The stage 20 includes a cylindrical portion 21 and an upper end plate 22 serving as a cover on the upper side of the cylindrical portion 21. The surface of the upper end plate 22 is an adsorption surface 22a for adsorbing the lower surface 12b of the wafer 12. The adsorption surface 22a is flat and is connected to the side of the cylindrical portion 21 through curved corner portions 25. An opening 23 for a moving element 30 to enter and exit is provided in the center of the upper end plate 22, and adsorption holes 24 for adsorbing the lower surface 12b of the wafer 12 are provided around the opening 23. Inside the cylindrical portion 21, a moving element 30 and a moving element drive unit 29 for driving the moving element 30 are provided. The moving element 30 includes a first lifting pin 31 disposed at the center of the stage 20 and a cylindrical second lifting pin 32 disposed on the outer periphery of the first lifting pin 31. The moving element drive unit 29 internally includes a drive motor, gears, linkage mechanism, etc., and is driven vertically such that the first lifting pin 31 and the second lifting pin 32 protrude from the adsorption surface 22a through the opening 23. The stage 20 moves vertically as a whole via the stage drive unit 62. Furthermore, the interior of the stage 20 is connected to the vacuum device 68 via a vacuum valve 64.

[0076] A suction nozzle 18 is disposed on the upper side of the wafer 12, adsorbing and holding the semiconductor die 15 on its lower surface 12b, and picking up the semiconductor die 15 from the upper surface 12a of the wafer 12. The suction nozzle 18 is provided with a suction port 19 for vacuum adsorbing the semiconductor die 15 on its lower surface 12b. The suction port 19 is connected to a vacuum device 68 via a vacuum valve 65. The suction nozzle 18 is moved in the up-down and left-right directions by a suction nozzle drive unit 63.

[0077] The wafer holder drive unit 61, stage drive unit 62, nozzle drive unit 63, vacuum valve 64, vacuum valve 65, vacuum device 68, and moving element drive unit 29 are connected to the control unit 70 and operate according to the instructions of the control unit 70. The control unit 70 is a computer that includes a central processing unit (CPU) 71, which serves as a processor for internal information processing, and a memory 72 for storing programs, etc.

[0078] Secondly, refer to Figures 2 to 7 The operation of picking up the semiconductor die 15 by the picking device 100 will be described.

[0079] like Figure 2 As shown in step S101, the CPU 71 of the control unit 70 begins the initial stripping process. The CPU 71 drives the stage drive unit 62 to press the adsorption surface 22a of the stage 20 against the lower surface 12b of the wafer 12. Then, as... Figure 3 As shown, the lower surface 12b of the wafer 12 is pushed up from the initial height by a first height H1. At this time, the width of the gap 14 between the semiconductor dies 15 attached to the wafer 12 is width W1.

[0080] Here, as explained below, the first height H1 can be formed between the semiconductor die 15 and the wafer 12 by moving laterally relative to each other by rubbing the lower surface 12b of the wafer 12 with the adsorption surface 22a of the stage 20. (Refer to...) Figure 5 , Figure 6 The height of the wafer 12 can be set to approximately 3mm to 5mm. In addition, during the normal pick-up operation of the semiconductor die 15, the wafer 12 is also pushed up by the stage 20, but the pushing height at this time is approximately 1mm. Therefore, the pushing height of the wafer 12 during the initial stripping process is higher than the pushing amount during the normal pick-up operation of the semiconductor die 15.

[0081] Next, as Figure 2 As shown in step S102, the CPU 71 of the control unit 70 causes the wafer holder 10 to move as shown in step S102 via the wafer holder drive unit 61. Figure 3 As shown by arrow B, it moves along the XY direction, which is the horizontal direction. Thus, the stage 20... Figure 3 As indicated by the middle arrow C, it moves relative to wafer 12 along the XY direction, which is the transverse direction.

[0082] The stage 20 can move relative to the wafer 12 in the lateral direction via various paths. Figure 4 An example is shown below. First, as... Figure 4 As shown by arrow 81, the stage 20 is moved relative to the wafer 12 toward the positive side of the X direction, which is the first transverse direction. Then, the direction of movement is reversed, as shown in the image. Figure 4 As indicated by arrow 82, the stage 20 is moved relative to the wafer 12 toward the negative side in the X direction. Then, as... Figure 4 As shown by the middle arrow 83, after moving the stage 20 towards the positive side of the Y direction, which is the second transverse direction, it is moved again as shown by the middle arrow 83. Figure 4As shown by arrows 84 and 85, the stage 20 is moved back and forth along the X direction. Thus, by alternately performing the back-and-forth movement of the stage 20 relative to the wafer 12 along the X direction and the back-and-forth path changing movement of the stage 20 along the Y direction to change the back-and-forth movement path, the stage 20 is moved relative to the wafer 12 in the lateral direction. Therefore, the stage 20 can be moved along the XY direction over the entire area of ​​the lower surface 12b of the wafer 12, corresponding to the area on the upper surface 12a to which the semiconductor die 15 is attached.

[0083] Next, refer to Figure 5 , Figure 6 The occurrence of peeling between the semiconductor die 15 and the upper surface 12a of the wafer 12 when the stage 20 is moved relative to the wafer 12 in the lateral direction will be explained.

[0084] After the lower surface 12b of the wafer 12 is pushed up to a first height H1 by the stage 20, the lower surface 12b of the wafer 12 bends along the curved corner 25 of the stage 20 and extends obliquely downward toward the expansion ring 16. Therefore, as Figure 5 As shown by arrow 86, if the wafer holder 10 is moved toward the negative side in the X direction, the stage 20 relative to the wafer 12 will be as follows: Figure 5 As indicated by arrow 87, the stage 20 moves towards the positive side in the X direction, and the adsorption surface 22a of the stage 20 moves relative to the positive side in the X direction by rubbing the lower surface 12b of the wafer 12.

[0085] Figure 5 This indicates a situation where the adhesion between the positive side of the semiconductor die 15 in the X direction and the upper surface 12a of the wafer 12 is greater than the adhesion between the negative side in the X direction. In this case, if the semiconductor die 15 is near the corner 25 of the stage 20, the portion of the semiconductor die 15 on the positive side in the X direction is attached to the upper surface 12a of the wafer 12 extending obliquely downward from the corner 25, while the edge portion of the semiconductor die 15 on the negative side in the X direction, where the adhesion is weaker, is as follows: Figure 5 As indicated by arrow 88, the wafer 12 is peeled off from its upper surface 12a, forming an initial peel 75. At this time, the width of the upper end of the gap 14 between the semiconductor die 15 and other semiconductor dies 15a located on the negative side of the X direction becomes a width W2 that is larger than the original width W1 of the gap 14. Therefore, when the stage 20 is moved relative to the wafer 12 in the lateral direction, there is no situation where the semiconductor die 15 comes into contact with adjacent semiconductor dies 15a and cracks or defects occur.

[0086] Figure 6This indicates a situation where, conversely, the adhesion between the negative side of the semiconductor die 15 in the X direction and the upper surface 12a of the wafer 12 is greater than the adhesion between the positive side in the X direction. In this case, if the semiconductor die 15 is near the corner 25 of the stage 20, the portion of the semiconductor die 15 with the negative side in the X direction is attached to the upper surface 12a of the wafer 12, which extends horizontally along the adsorption surface 22a of the stage 20. On the other hand, if the semiconductor die 15 is near the corner 25 of the stage 20, the portion of the wafer 12 with the edge of the semiconductor die 15 with the positive side in the X direction attached is... Figure 6 As indicated by arrow 89, the wafer 12 is bent obliquely downwards from the corner 25 of the stage 20 toward the expansion ring 16. This peels the wafer 12 from the edge of the semiconductor die 15 on the positive side in the X direction, forming an initial peel 76. At this time, the width of the upper end of the gap 14 between the semiconductor die 15 and other semiconductor dies 15a located on the negative side in the X direction becomes the same as the original gap 14 width W1. Therefore, there is no situation where the semiconductor die 15 comes into contact with adjacent semiconductor dies 15a and cracks or defects occur.

[0087] As mentioned above Figure 4 As explained, if the stage 20 moves back and forth relative to the wafer 12 by rubbing the lower surface 12b of the wafer 12 with the adsorption surface 22a of the stage 20, an initial peel 75 or an initial peel 76 is formed on each of the outgoing and incoming paths of the semiconductor die 15. As a result, an initial peel 75 or an initial peel 76 is formed at the edge of the semiconductor die 15, reducing the adhesion between the semiconductor die 15 and the wafer 12. Furthermore, when the stage 20 moves relative to the wafer 12 along the XY direction, a reference... Figure 5 , Figure 6 The semiconductor die 15, after initial peeling 75 and initial peeling 76, is reattached to the upper surface 12a of the wafer 12. However, the adhesion at the reattached location is less than the initial adhesion, thus reducing the adhesion between the semiconductor die 15 and the wafer 12.

[0088] exist Figure 2 In step S103, the CPU 71 of the control unit 70 determines whether the stage 20 has been moved along the XY direction over the entire area of ​​the lower surface 12b of the wafer 12, corresponding to the area on the upper surface 12a to which the semiconductor die 15 is attached. That is, it determines whether the adsorption surface 22a of the stage 20 has been used for friction. Figure 4 The wafer 12 shown is attached to the lower side of all semiconductor dies 15 on the upper surface 12a of the wafer 12. The CPU 71 is... Figure 2 If the determination in step S103 is negative, return. Figure 2In step S102, the stage 20 continues to move relative to the wafer 12 in the lateral direction. Meanwhile, the CPU 71... Figure 2 If the determination in step S103 is yes, the initial stripping process ends and proceeds to the next step. Figure 2 The picking process begins in step S104.

[0089] like Figure 2 As shown in step S104, the CPU 71 of the control unit 70 moves the wafer holder 10 along the XY direction through the wafer holder drive unit 61, so that the adsorption surface 22a of the stage 20 moves to the semiconductor die 15 to be picked up.

[0090] Next, as Figure 2 As shown in step S105, the CPU 71 of the control unit 70 raises the stage 20 via the stage drive unit 62, pushing the lower surface 12b of the wafer 12 upward to a second height H2 (see reference). Figure 7 The second height H2 is the same as the upward push height during the typical pick-up operation of the semiconductor die 15 as described above, for example, about 1 mm, which is less than the first height H1 described above.

[0091] Next, as Figure 2 As shown in step S106, the CPU 71 of the control unit 70 opens the vacuum valve 64, making the interior of the stage 20 a vacuum. As a result, the adsorption hole 24 of the stage 20 becomes a vacuum, causing the lower surface 12b of the wafer 12 to be in close contact with the adsorption surface 22a of the stage 20.

[0092] Then, as Figure 2 Step S107 Figure 7 As shown, the CPU 71 of the control unit 70 causes the first lifting pin 31 and the second lifting pin 32 constituting the moving element 30 to rise from the adsorption surface 22a via the moving element drive unit 29, lifting the semiconductor die 15 to be picked up from under the wafer 12. Furthermore, the control unit 70 moves the position of the suction nozzle 18 directly above the semiconductor die 15 to be picked up via the suction nozzle drive unit 63, opens the vacuum valve 65, and creates a vacuum in the suction port 19 of the suction nozzle 18, thereby picking up the semiconductor die 15 through the suction nozzle 18.

[0093] The CPU 71 of the control unit 70 determines that... Figure 2 In step S108, has all the semiconductor dies 15 to be picked up been collected? CPU 71 in Figure 2 If the determination in step S108 is negative, return. Figure 2 In step S104, the next semiconductor die 15 is picked up.

[0094] On the other hand, Figure 2If the determination in step S108 is yes, the CPU 71 ends the picking process and terminates the action.

[0095] The pick-up device 100 described above performs initial peeling 75 and initial peeling 76 on the edge of the semiconductor die 15 to be picked up through the initial peeling process, thereby reducing the adhesion between the semiconductor die 15 and the wafer 12, and then performs the pick-up process to pick up the semiconductor die 15. Therefore, it can reduce the picking error of the semiconductor die 15.

[0096] Furthermore, the pickup device 100 in this embodiment reduces the adhesion of the wafer 12 by moving the stage 20 back and forth relative to the wafer 12 during the initial peeling process, thereby causing multiple initial peels 75 and 76 between the semiconductor die 15 and the wafer 12. As a result, pickup errors of the semiconductor die 15 can be reduced.

[0097] In the pickup device 100 described above, during the initial stripping process, such as Figure 4 As shown, the operation of repeatedly moving the stage 20 back and forth relative to the wafer 12 in the X direction and then changing the back and forth movement path is described in the manner of moving along the lateral direction by means of the adsorption surface 22a of the stage 20 rubbing against the lower surface 12b of the wafer 12, but it is not limited to this.

[0098] For example, it can be like Figure 8 As shown, after moving the stage 20 clockwise along the circumferential direction as indicated by arrow 91, the direction of movement is reversed, and it is moved counterclockwise along the circumferential direction as indicated by arrow 92, thus moving back and forth along the circumferential direction. Then, as... Figure 8 As shown by arrow 93, the platform 20 is moved along the radial direction, and the reciprocating movement path is changed to the inner radial direction, as shown in the image. Figure 8 As indicated by arrows 94 and 95, the stage 20 is moved back and forth along the circumference and the operation is repeated alternately.

[0099] This reduces the number of movements in the radial direction orthogonal to the circumferential direction, and enables initial peeling 75 and initial peeling 76 to occur between the semiconductor die 15 and the wafer 12.

[0100] Moreover, it can also be like Figure 9 As indicated by arrow 97, the stage 20 is moved laterally in a spiral from the outer periphery of the wafer 12 toward the center, and then the direction of movement is reversed so that it is moved laterally in a spiral from the center of the wafer 12 toward the outer periphery. Alternatively, the stage 20 can be moved laterally in a spiral from the center of the wafer 12 toward the outer periphery, and then the direction of movement is reversed so that it is moved laterally in a spiral from the outer periphery of the wafer 12 toward the center.

[0101] Thus, initial peeling 75 and initial peeling 76 can be effectively performed between the semiconductor die 15 and the wafer 12 through simple actions.

[0102] Furthermore, the pickup device 100 described above is described in the form of moving the stage 20 along the XY direction over the entire area of ​​the lower surface 12b of the wafer 12 to which the upper surface 12a of the wafer 12 to which the semiconductor die 15 is attached, and then picking up the semiconductor die 15. However, this is not a limitation. For example, when picking up a portion of the semiconductor die 15 attached to the upper surface 12a of the wafer 12, the stage 20 can be moved along the XY direction over a portion of the lower surface 12b of the wafer 12 to which the semiconductor die 15 to be picked up is attached, and then the semiconductor die 15 can be picked up.

[0103] The pickup device 100 of the embodiment has been described above, but reference is made to... Figures 2-7 The operation of the described pickup device 100 also performs the initial stripping method between the semiconductor die 15 and the wafer 12 as follows.

[0104] The initial peeling method performed by the pickup device 100 of the embodiment performs an initial peeling between the semiconductor die 15 and the wafer 12 before picking up the semiconductor die 15 attached to the upper surface 12a of the wafer 12. The initial peeling method raises the stage 20, pushes the lower surface 12b of the wafer 12 upward, and moves the stage 20 relative to the wafer 12 in the lateral direction by rubbing the lower surface 12b of the wafer 12 with the adsorption surface 22a of the stage 20, thereby performing an initial peeling between the semiconductor die 15 and the wafer 12.

[0105] This reduces the adhesion between the semiconductor die 15 and the wafer 12 before picking up the semiconductor die 15.

Claims

1. A method for picking up a semiconductor die, wherein an initial peeling occurs between the semiconductor die and the wafer before picking up the semiconductor die attached to the upper surface of a wafer. The method for picking up semiconductor dies is characterized by including: The preparation process includes preparing a pickup device to pick up the semiconductor die attached to the upper surface of the wafer. The pickup device includes: a wafer holder for holding the wafer with the semiconductor die attached to its upper surface; a stage including an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; and a moving element disposed inside the stage, rising from the adsorption surface to lift the semiconductor die to be picked up; and... In the initial peeling process, the stage is raised, pushing the lower surface of the wafer upwards. The stage moves continuously relative to the wafer, and the stage's adsorption surface rubs against the lower surface of the wafer, causing the stage to move laterally relative to the wafer, thus initiating peeling between the semiconductor die and the wafer. In the pick-up process, after the initial stripping process, the moving element is used to lift and pick up the semiconductor die to be picked up. The initial stripping process moves the stage relative to the wafer in a lateral direction, causing the adsorption surface to rub against a portion or all of the area of ​​the lower surface of the wafer corresponding to the area of ​​the upper surface of the wafer to which the semiconductor die is attached. The following steps are performed alternately and repeatedly: The reciprocating process causes the platform to move back and forth along the first transverse direction; and The reciprocating path change process involves moving the platform along a second transverse direction orthogonal to the first transverse direction, thereby changing the reciprocating movement path.

2. The semiconductor die picking method according to claim 1, characterized in that: The initial stripping process pushes the lower surface of the wafer up by 3mm to 5mm.

3. The method for picking up semiconductor dies according to claim 1, characterized in that: The wafer is circular. The first horizontal direction is the circumferential direction of the wafer. The second transverse direction is the radial direction of the wafer.

4. A method for picking up a semiconductor die, wherein an initial peeling occurs between the semiconductor die and the wafer before picking up the semiconductor die attached to the upper surface of a wafer. The method for picking up semiconductor dies is characterized by including: The preparation process includes preparing a pickup device to pick up the semiconductor die attached to the upper surface of the wafer. The pickup device includes: a wafer holder for holding the wafer with the semiconductor die attached to its upper surface; a stage including an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; and a moving element disposed inside the stage, rising from the adsorption surface to lift the semiconductor die to be picked up; and... In the initial peeling process, the stage is raised, pushing the lower surface of the wafer upwards. The stage moves continuously relative to the wafer, and the stage's adsorption surface rubs against the lower surface of the wafer, causing the stage to move laterally relative to the wafer, thus initiating peeling between the semiconductor die and the wafer. In the pick-up process, after the initial stripping process, the moving element is used to lift and pick up the semiconductor die to be picked up. The wafer is circular. In the initial stripping process, the stage is moved laterally in a spiral motion from the outer periphery of the wafer toward the center or from the center toward the outer periphery, and then moved laterally in a spiral motion from the center of the wafer toward the outer periphery or from the outer periphery toward the center.

5. A semiconductor die pickup device for picking up semiconductor dies attached to the upper surface of a wafer, the semiconductor die pickup device comprising: A wafer holder for holding the wafer on which the semiconductor die is attached to its upper surface; A wafer holder drive unit drives the wafer holder in the lateral direction; The stage includes an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; The stage drive unit drives the stage in the vertical direction; A movable element, disposed inside the stage, rises from the adsorption surface to lift the semiconductor die; A moving element drive unit drives the moving element; and The control unit adjusts the operations of the wafer holder drive unit, the stage drive unit, and the moving element drive unit. The semiconductor die pickup device is characterized in that: The control unit raises the stage via the stage driving unit, pushing the lower surface of the wafer upwards. The wafer holder driving unit then causes the stage to move continuously relative to the wafer in the lateral direction by rubbing the adsorption surface of the stage against the lower surface of the wafer. Alternatingly repeating the process of moving the stage back and forth along a first transverse direction via the stage drive unit; and after moving the stage along a second transverse direction orthogonal to the first transverse direction via the stage drive unit, raising the moving element from the adsorption surface via the moving element drive unit to lift the semiconductor die of the picked-up object.

6. A semiconductor die pickup device for picking up semiconductor dies attached to the upper surface of a wafer, the semiconductor die pickup device comprising: A wafer holder for holding the wafer on which the semiconductor die is attached to its upper surface; A wafer holder drive unit drives the wafer holder in the lateral direction; The stage includes an adsorption surface for adsorbing the lower surface of the wafer, which is cylindrical and connected to the side surface by a curved surface; The stage drive unit drives the stage in the vertical direction; A movable element, disposed inside the stage, rises from the adsorption surface to lift the semiconductor die; A moving element drive unit drives the moving element; and The control unit adjusts the operations of the wafer holder drive unit, the stage drive unit, and the moving element drive unit. The semiconductor die pickup device is characterized in that: The wafer is circular. The control unit raises the stage via the stage driving unit, pushing the lower surface of the wafer upwards. The wafer holder driving unit then causes the stage to move continuously relative to the wafer in the lateral direction by rubbing the adsorption surface of the stage against the lower surface of the wafer. After the stage is moved in a spiral motion from the outer periphery of the wafer toward the center or from the center toward the outer periphery by the stage driving unit, and then moved in a spiral motion from the center of the wafer toward the outer periphery or from the outer periphery toward the center by the stage driving unit, the moving element is raised from the adsorption surface by the moving element driving unit to lift the semiconductor die to be picked up.

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