Light emitting diode device with tunable emission

Abstract

Light emitting diode (LED) devices that emit different colors on the same wafer are described, which facilitates their integration in a tight packaging density (without the need to transfer the devices from two different wafers to a third substrate module). The LED devices and driving methods allow for emission of light of different colors and similar brightness levels for a given input current.

Description

Technical Field

[0001] The embodiments of this disclosure generally relate to light-emitting diode (LED) device arrays and methods of manufacturing the same. More particularly, the embodiments relate to LED devices that emit both long-wavelength and short-wavelength light. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor light source that emits visible light when an electric current flows through it. LEDs combine p-type and n-type semiconductors. LEDs typically use group III compound semiconductors. Group III compound semiconductors provide stable operation at higher temperatures than devices using other semiconductors. Group III compounds are typically formed on substrates made of sapphire or silicon carbide (SiC).

[0003] The projection of light requires a module containing many small LEDs tightly packed together. In some applications, it is desirable to place LEDs of different colors closely together in the same module, or even to have a single LED emit a different color. For example, this capability could allow the integration of brake indicator (red) and turn indicator (amber) functions into a single compact module, thus taking up less space in a motor vehicle. In the future, it may be desirable for vehicles to project different colors of light onto roads or sidewalks to communicate with pedestrians or other vehicles.

[0004] Compact integration of LEDs based on standard AlInGaP red and amber emitters is challenging because each color must use a different chip, and the efficiencies of different colored LEDs respond very differently to temperature variations. Furthermore, using standard InGaN LEDs and varying the drive current results in amber light (high current density) that is significantly brighter than red light (low current density). Many applications require red light with similar brightness to amber light. For example, brake and turn signals in motor vehicles must be bright enough to be clearly visible in sunlight. Therefore, LEDs capable of producing different colors of light but with similar brightness levels are needed. Summary of the Invention

[0005] Embodiments of this disclosure relate to LED devices and methods of manufacturing LED devices. In a first embodiment, a light-emitting diode (LED) device includes: a mesa comprising a semiconductor layer including an n-type layer, an active layer, and a p-type layer; an anode contact including a first anode region and a second anode region separated by a gap, the first anode region being on the top surface of the mesa and the second anode region being adjacent to the first anode region; a switch connecting the first anode region and the second anode region; and a cathode contact adjacent to the anode contact and electrically connected to the n-type layer.

[0006] In the second embodiment, the first embodiment is modified such that the first anode region has a first area and the second anode region has a second area, the second area being larger than the first area. In the third embodiment, the first embodiment is modified such that the gap has a width greater than approximately 1 micrometer.

[0007] In the fourth embodiment, the third embodiment further includes the feature that a first dielectric layer is present in the gap. In the fifth embodiment, the fourth embodiment further includes the feature that a second dielectric layer is present on the top surface of the anode contact and a mirror layer is present on the top surface of the first dielectric layer. In the sixth embodiment, the fifth embodiment is modified such that the first dielectric layer and the second dielectric layer independently comprise silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x The mirror layer comprises one or more of titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2). In the seventh embodiment, the fifth embodiment further includes the following feature: the mirror layer comprises one or more of aluminum (Al), silver (Ag), gold (Au), copper (Cu), metal nitrides, and alloys thereof.

[0008] In the eighth embodiment, the first embodiment is modified such that the first anode region and the second anode region independently include one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In the ninth embodiment, the first embodiment further includes the following features: an anode terminal on the anode contact, a cathode terminal on the cathode contact, and a switch terminal on the switch.

[0009] Another aspect of this disclosure relates to a method of operating an LED device according to the first embodiment. In a tenth embodiment, the method includes turning on a switch and allowing current to flow through an anode contact to a first anode region to emit light with a centroid wavelength less than 590 nm. In an eleventh embodiment, the method includes closing a switch and allowing current to flow through an anode contact to a first anode region and a second anode region to emit light with a centroid wavelength greater than 610 nm.

[0010] Another aspect of this disclosure relates to a light-emitting diode (LED) device. In a twelfth embodiment, the LED device includes a mesa array comprising a first mesa and a second mesa separated by trenches. The first and second mesas include semiconductor layers comprising an n-type layer, an active layer, and a p-type layer. The trenches have at least one sidewall and extend to the n-type layer. The first mesa has a first width, and the second mesa has a second width, the first width being greater than the second width. A first anode contact is located on the top surface of the first mesa. A second anode contact is located on the top surface of the second mesa, and a cathode contact is located adjacent to both the first and second mesas. In a thirteenth embodiment, the twelfth embodiment is modified such that the first and second anode contacts independently comprise a material selected from one or more of silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In a fourteenth embodiment, the twelfth embodiment further includes a first anode terminal on the first anode contact, a second anode terminal on the second anode contact, and a cathode terminal on the cathode contact. In the fifteenth embodiment, the twelfth embodiment further includes the feature of a dielectric layer on at least one sidewall of the trench. In the sixteenth embodiment, the fifteenth embodiment is modified such that the dielectric layer comprises silicon oxide (SiO2), aluminum oxide (Al2O3), or silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0011] Another aspect of this disclosure relates to a method of operating an LED device according to the twelfth embodiment. In the seventeenth embodiment, the method includes flowing current through a first anode contact to emit light with a centroid wavelength less than 590 nm. In the eighteenth embodiment, the method includes flowing current through a second anode contact to emit light with a centroid wavelength greater than 610 nm.

[0012] Another aspect of this disclosure relates to a light-emitting diode (LED) device. In a nineteenth embodiment, the LED device includes: a first mesa array including a plurality of first mesas separated by a first trench filled with a dielectric layer; a second mesa array including a plurality of second mesas separated by a second trench filled with a dielectric layer; a first anode contact on a top surface of the first mesa array; a second anode contact on a top surface of the second mesa array; and a cathode contact adjacent to the first and second mesa arrays. The plurality of first and second mesas include semiconductor layers. The semiconductor layers include an n-type layer, an active layer, and a p-type layer, and the first and second trenches extend to the n-type layer. In a twentieth embodiment, the nineteenth embodiment is modified such that the first and second anode contacts independently include one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In the twenty-first embodiment, the following features are further included: a first anode terminal on the first anode contact, a second anode terminal on the second anode contact, and a cathode terminal on the cathode contact. In the twenty-second embodiment, the nineteenth embodiment is modified such that the dielectric layer comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0013] Another aspect of this disclosure relates to a method of operating an LED device according to the nineteenth embodiment. In a twenty-third embodiment, the method includes flowing current through a first anode contact to emit light with a centroid wavelength less than 590 nm. In a twenty-fourth embodiment, the method includes flowing current through a second anode contact to emit light with a centroid wavelength greater than 610 nm. Attached Figure Description

[0014] To facilitate a detailed understanding of the features listed above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of this disclosure and should therefore not be considered as limiting its scope, as other equivalent embodiments are permissible. The embodiments described herein are shown in the figures by way of example rather than limitation, in which similar reference numerals indicate similar elements.

[0015] Figure 1A A top view of an LED device according to one or more embodiments is shown;

[0016] Figure 1B It shows Figure 1A A cross-sectional view of the LED device;

[0017] Figure 2 shows a process flow diagram of a method according to one or more embodiments;

[0018] Figure 3A A cross-sectional view of an LED device according to one or more embodiments is shown;

[0019] Figure 3B It shows Figure 3A A top view of the LED device;

[0020] Figure 4 shows a process flow diagram of the method according to one or more embodiments;

[0021] Figure 5A A cross-sectional view of an LED device according to one or more embodiments is shown;

[0022] Figure 5B A cross-sectional view of an LED device according to one or more embodiments is shown;

[0023] Figure 5C It shows Figure 5A and Figure 5B A top view of the LED device; and

[0024] Figure 6 shows a process flow diagram of a method according to one or more embodiments. Detailed Implementation

[0025] Before describing several exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the details of the construction or process steps set forth in the following description. This disclosure can have other embodiments and can be practiced or performed in various ways.

[0026] According to one or more embodiments, as used herein, the term "substrate" refers to an intermediate or final structure having a surface or a portion thereof, on which a process is performed. Additionally, in some embodiments, reference to a substrate also refers to only a portion of a substrate, unless the context clearly indicates otherwise. Furthermore, according to some embodiments, reference to deposition on a substrate includes deposition on a bare substrate, or deposition on a substrate on which one or more layers, films, features, or materials are deposited or formed.

[0027] In one or more embodiments, "substrate" means any substrate on which a film processing is performed during a fabrication process, or a material surface formed on a substrate. In exemplary embodiments, depending on the application, substrate surfaces on which processing is performed include materials such as silicon, silicon oxide, silicon-on-insulator (SOI), strained silicon, amorphous silicon, doped silicon, carbon-doped silicon oxide, germanium, gallium arsenide, glass, sapphire, and any other suitable materials (such as metals, metal nitrides, group III-nitrides (e.g., GaN, AlN, InN, and other alloys), metal alloys, and other conductive materials). Substrates include, but are not limited to, light-emitting diode (LED) devices. In some embodiments, the substrate is exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, electron beam cure, and / or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in some embodiments, any of the disclosed film processing steps are also performed on an underlayer formed on the substrate, and the term "substrate surface" is intended to include such an underlayer as indicated by the context. Therefore, for example, in cases where a film / layer or part of a film / layer has already been deposited onto the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0028] In this disclosure, the terms "wafer" and "substrate" will be used interchangeably. Thus, as used herein, a wafer is used as a substrate for forming the LED device described herein.

[0029] The embodiments described herein depict LED devices and methods for forming LED devices. In particular, this disclosure describes LED devices and methods for manufacturing LED devices that advantageously emit multiple colors or wavelengths from a single wafer. LED devices allow for the emission of similar brightness levels for different drive current densities. One or more embodiments of this disclosure can be used to fabricate microLED displays.

[0030] In one or more embodiments, a gallium nitride (GaN)-based LED chip comprising an InGaN quantum well is provided, which emits light with a centroid wavelength greater than 610 nm for sufficiently low current densities and emits light with a centroid wavelength less than 590 nm for even higher current densities.

[0031] In one or more embodiments, a pulsed current source is used to drive the LED. In one or more embodiments, in addition to the current, the duty cycle of the current source is also controlled. In one or more embodiments, light with a centroid wavelength less than 590 nm has a similar time-averaged radiance to light with a centroid wavelength greater than 610 nm, which is achieved by increasing the current while decreasing the duty cycle. In one or more embodiments, the pulse frequency is set high enough that the intensity modulation from the individual pulses is invisible.

[0032] In one or more embodiments, a pulsed voltage source is used to drive the LED. In one or more embodiments, in addition to the voltage, the duty cycle of the voltage source is also controlled. In one or more embodiments, light with a centroid wavelength less than 590 nm has a similar time-averaged radiance to light with a centroid wavelength greater than 610 nm, which is achieved by increasing the voltage while decreasing the duty cycle. In one or more embodiments, the pulse frequency is set high enough that intensity modulation from the individual pulses is invisible.

[0033] In one or more embodiments, the LED includes an integrated switch that increases the anode contact area when the LED operates in an emission mode with a centroid wavelength greater than 610 nm. In one or more embodiments, when the LED operates at a fixed DC current, the increase in contact area is designed to change the color from light with a centroid wavelength less than 590 nm to light with a centroid wavelength greater than 610 nm.

[0034] In one or more embodiments, the LED chip is divided into two pixel arrays, each array having the same number of pixels of different sizes. Two separate anode contacts are provided (one for each array). The array with the larger pixel size emits light with a centroid wavelength greater than 610 nm, and the array with the smaller pixel size emits light with a centroid wavelength less than 590 nm. In one or more embodiments, the two arrays can be driven by the same current source or different current sources. In some embodiments, the two arrays can be driven by a fixed DC current source.

[0035] In one or more embodiments, the LED chip is divided into two pixel arrays, each array having a different number of pixels of the same size. Two separate anode contacts are provided (one for each array). In one or more embodiments, the array with more pixels emits light with a centroid wavelength greater than 610 nm. In one or more embodiments, the array with fewer pixels emits light with a centroid wavelength less than 590 nm. The two arrays can be driven with the same current source or different current sources. The array with more pixels emits light with a centroid wavelength greater than 610 nm, and the array with fewer pixels emits light with a centroid wavelength less than 590 nm. In one or more embodiments, the two arrays can be driven with the same current source or different current sources. In some embodiments, the two arrays can be driven by a fixed DC current source.

[0036] Figure 1A A top view of an LED device according to one or more embodiments is shown. Figure 1B It shows along Figure 1A A cross-sectional view of the LED device taken along line A-A'. (Reference) Figure 1A and Figure 1BIn one or more embodiments, the semiconductor layer 122 is grown on the substrate 102. According to one or more embodiments, the semiconductor layer 122 includes an epitaxial layer, a group III nitride layer, or an epitaxial group III nitride layer. In one or more embodiments, the semiconductor layer is an epitaxial semiconductor layer with a thickness of at least 1 micrometer.

[0037] The substrate 102 can be any substrate known to those skilled in the art. In one or more embodiments, the substrate 102 includes one or more of sapphire, silicon carbide, silicon (Si), quartz, magnesium oxide (MgO), zinc oxide (ZnO), spinel, etc. In one or more embodiments, the substrate 102 is not patterned prior to epitaxial layer growth. Therefore, in some embodiments, the substrate 102 is not patterned and can be considered flat or substantially flat. In other embodiments, the substrate is patterned, for example, a patterned sapphire substrate (PSS).

[0038] In one or more embodiments, semiconductor layer 122 comprises a group III nitride material, and in a specific embodiment comprises an epitaxial group III nitride material. In some embodiments, the group III nitride material includes one or more of gallium (Ga), aluminum (Al), and indium (In). Therefore, in some embodiments, semiconductor layer 122 comprises one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), and aluminum indium gallium nitride (AlInGaN). In one or more specific embodiments, semiconductor layer 122 includes a p-type layer 110, an active region 120, and an n-type layer 104. In a specific embodiment, the n-type layer 104 and p-type layer 110 of the LED comprise n-doped and p-doped GaN, respectively.

[0039] In one or more embodiments, a group III nitride material layer for forming the LED is deposited using one or more of sputtering deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced chemical vapor deposition (PECVD). In other embodiments, a substrate is placed in a metal-organic vapor phase epitaxy (MOVPE) reactor for epitaxy of the LED device layer to grow semiconductor layer 122.

[0040] As used herein, “sputter deposition” refers to a physical vapor deposition (PVD) method for thin film deposition via sputtering. In sputter deposition, materials such as group III nitrides are ejected from a target, which serves as the source, onto a substrate. This technique is based on the bombardment of the source material (target) with ions. Due to the purely physical process of sputtering the target material, the ion bombardment generates vapor.

[0041] As used in some embodiments herein, “atomic layer deposition” (ALD) or “cyclic deposition” refers to a vapor-phase technique for depositing a thin film on a substrate surface. An ALD process involves exposing a substrate surface or a portion of a substrate to alternating precursors, i.e., two or more reactive compounds, to deposit a layer of material on the substrate surface. When the substrate is exposed to alternating precursors, the precursors are introduced sequentially or simultaneously. The precursors are introduced into the reaction zone of the processing chamber, and the substrate or a portion of the substrate is individually exposed to the precursors.

[0042] As used herein, according to some embodiments, "chemical vapor deposition" refers to the process of depositing a material film from a vapor phase by decomposing a chemical substance on a substrate surface. In CVD, the substrate surface is simultaneously or substantially simultaneously exposed to a precursor and / or co-agent. As used herein, "substantially simultaneously" means that most of the precursor exposure is co-current or overlapped.

[0043] As used herein according to some embodiments, “plasma-enhanced atomic layer deposition (PEALD)” refers to a technique for depositing thin films on a substrate. In some examples of PEALD processes relative to thermal ALD processes, the material can be formed from the same chemical precursors, but at a higher deposition rate and a lower temperature. Generally, a PEALD process sequentially introduces reactant gases and reactant plasmas into a process chamber containing a substrate. The first reactant gas is pulsed in the process chamber and adsorbed onto the substrate surface. Subsequently, the reactant plasma is pulsed into the process chamber and reacts with the first reactant gas to form a deposited material, such as a thin film on the substrate. Similar to thermal ALD processes, a purge step can be performed between each reactant delivery.

[0044] As used herein according to one or more embodiments, "plasma-enhanced chemical vapor deposition (PECVD)" refers to a technique for depositing thin films on a substrate. In a PECVD process, a gaseous or liquid source material (such as vapor of a gaseous or liquid Group III nitride material) is introduced into a PECVD chamber, the gaseous or liquid Group III nitride material already entrained in a carrier gas. Plasma-initiated gas is also introduced into the chamber. The generation of plasma within the chamber produces excited free radicals. These excited free radicals chemically bond to the substrate surface located within the chamber, forming the desired film thereon.

[0045] In one or more embodiments, semiconductor layer 122 comprises a stack of undoped group III nitride material and doped group III nitride material. Depending on whether p-type or n-type group III nitride material is required, the group III nitride material may be doped with one or more of silicon (Si), oxygen (O), boron (B), phosphorus (P), germanium (Ge), manganese (Mn), or magnesium (Mg). In a particular embodiment, semiconductor layer 122 comprises an n-type layer 104, an active layer 120, and a p-type layer 110.

[0046] In one or more embodiments, the combined thickness of the semiconductor layer 122 is in the range from about 1 μm to about 10 μm, including the ranges from about 1 μm to about 9 μm, 1 μm to about 8 μm, 1 μm to about 7 μm, 1 μm to about 6 μm, 1 μm to about 5 μm, 1 μm to about 4 μm, 1 μm to about 3 μm, 2 μm to about 10 μm, including the ranges from about 2 μm to about 9 μm, 2 μm to about 8 μm, 2 μm to about 7 μm, 2 μm to about 6 μm, 2 μm to about 5 μm, 2 μm to about 4 μm, 2 μm to about 3 μm, 3 μm to about 10 μm, 3 μm to about 9 μm, 3 μm to about 10 ... m to about 8μm, 3μm to about 7μm, 3μm to about 6μm, 3μm to about 5μm, 3μm to about 4μm, 4μm to about 10μm, 4μm to about 9μm, 4μm to about 8μm, 4μm to about 7μm, 4μm to about 6μm, 4μm to about 5μm, 5μm to about 10μm, 5μm to about 9μm, 5μm to about 8μm, 5μm to about 7μm, 5μm to about 6μm, 6μm to about 10μm, 6μm to about 9μm, 6μm to about 8μm, 6μm to about 7μm, 7μm to about 10μm, 7μm to about 9μm, or 7μm to about 8μm.

[0047] In one or more embodiments, an active region 120 is formed between the n-type layer 104 and the p-type layer 110. The active region 120 may comprise any suitable material known to those skilled in the art. In one or more embodiments, the active region 120 comprises a group III nitride material multiple quantum well (MQW) and a group III nitride electron blocking layer.

[0048] In one or more embodiments, the quantum well design in the epitaxy is modified to intentionally increase the peak offset of the current. In some embodiments, the physical width of the quantum well becomes wider. Thus, in one or more embodiments, the width of the quantum well is in the range of approximately 2 nm to approximately 7 nm.

[0049] In some embodiments, the semiconductor layer 122 and the substrate 102 are etched to form a mesa 130. Figure 1B In the embodiment shown, the tabletop 130 has a top surface 130t and at least one sidewall 130s.

[0050] In one or more embodiments, the light-emitting diode (LED) device 100 includes an anode contact 113 and a cathode contact 108. In one or more embodiments, the anode contact 113 is divided into two regions, a first anode region 112 and a second anode region 118. The first anode region 112 and the second anode region 118 have unequal dimensions. Typically, the first anode region and the second anode region are separated from each other by a gap 115. Thus, in one or more embodiments, the anode contact 113 has a first anode region 112 and a second anode region 118 separated by the gap 115. The first anode region 112 is on the top surface 130t of the mesa 130. The second anode region 118 is adjacent to the first anode region 112.

[0051] In one or more embodiments, a switch 116 is used to short-circuit the first anode region 112 and the second anode region 118 together. In one or more embodiments, the switch 116 is an electronic switch. The switch 116 connects the first anode region and the second anode region 118.

[0052] The area ratio of the first anode region 112 to the sum of the areas of the first anode region 112 and the second anode region 118 is chosen such that, for a given input current, when the current is injected only into the first anode region 112, light emission with a centroid wavelength less than 590 nm is obtained. In one or more embodiments, when the current is injected into both the first anode region 112 and the second anode region 118, light emission with a centroid wavelength greater than 610 nm is obtained. In other words, the current density is changed by switching the anode area rather than by changing the current. Without intending to be bound by theory, this method is thought to allow changes in current density (and color) without a significant change in brightness.

[0053] In one or more embodiments, the gap 115 between the first anode region 112 and the second anode region 118 is filled with a dielectric layer 106 such that when the switch 116 is turned on, current flows only through the first anode region 112. In one or more embodiments, the gap 115 has a width greater than 5 micrometers, such that the lateral current diffused from the first anode region 112 and the second anode region 118 through the p-type layer 110 when the switch 116 is turned on is negligible. Alternatively, for LEDs emitting light from the side of the growth substrate 102, a separate mirror layer 114 may be provided on top of the anode contact 113 to prevent light from escaping through the gap 115 between the first anode region 112 and the second anode region 118. The additional dielectric layer 106 prevents the mirror layer 114 from shorting the anode contact 113.

[0054] In one or more embodiments, the anode contact 113 comprises a reflective material or a transparent conductor. In one or more embodiments, the anode contact 113 comprises one or more of silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In one or more embodiments, the first anode region and the second anode region independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0055] As used herein, the term "dielectric" refers to an electrically insulating material that can be polarized by an applied electric field. In one or more embodiments, dielectric layer 106 includes, but is not limited to, oxides such as silicon oxide (SiO2), aluminum oxide (Al2O3); and nitrides such as silicon nitride (Si3N4). In one or more embodiments, dielectric layer 106 comprises silicon nitride (Si3N4). In one or more embodiments, dielectric layer 106 comprises silicon oxide (SiO2). In some embodiments, the composition of dielectric layer 106 is non-stoichiometric with respect to an ideal chemical formula. For example, in some embodiments, the dielectric layer includes, but is not limited to, oxides (e.g., silicon oxide, aluminum oxide), nitrides (e.g., silicon nitride (SiN)), carbon oxides (e.g., silicon oxycarbonate (SiOC)), and oxynitrides (e.g., silicon oxycarbonitrile (SiNCO)). In one or more embodiments, dielectric layer 106 comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0056] In one or more embodiments, the dielectric layer 106 is deposited by one or more of sputtering deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced chemical vapor deposition (PECVD).

[0057] In one or more embodiments, the cathode contact 108 is adjacent to the anode contact 113 and is electrically connected to the n-type layer 104.

[0058] In one or more embodiments, the cathode contact 108 comprises a metal selected from the group consisting of titanium (Ti), aluminum (Al), chromium (Cr), silver (Ag), gold (Au), alloys thereof, or multiple layers thereof.

[0059] refer to Figure 1AIn addition to the commonly used cathode contact terminal 108t and anode contact terminal 113t for LEDs, an electrical terminal 116t is also required for the operation of the switch 116.

[0060] Figure 2A A process flow diagram of method 150 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 1A and Figure 1B Method 150 of the LED requires that, in operation 152, an LED is provided for processing. As used in this specification and the appended claims, the term "provided" means that the LED is available for operation. In some embodiments, the LED has been manufactured. In other embodiments, the LED is manufactured according to one or more embodiments described herein. In operation 154, switch 116 is turned on, and in operation 156, current flows through anode contact 113 to first anode contact region 112 to emit light with a centroid wavelength less than 590 nm.

[0061] Figure 2B A process flow diagram of method 160 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 1A and Figure 1B Method 160 of the LED requires that, in operation 162, an LED is provided for processing. In operation 164, switch 116 is closed, and in operation 166, current flows through anode contact 113 to first anode contact region 112 to emit light with a centroid wavelength greater than 610 nm.

[0062] Figure 3A A cross-sectional view of an LED device according to one or more embodiments is shown. Figure 3B It shows Figure 3A A top view of the LED device. (Reference) Figure 3A and Figure 3B In one or more embodiments, the semiconductor layer 222 is grown on the substrate 202. According to one or more embodiments, the semiconductor layer 222 includes an epitaxial layer, a group III nitride layer, or an epitaxial group III nitride layer. In one or more embodiments, the semiconductor layer is an epitaxial semiconductor layer with a thickness of at least 1 micrometer.

[0063] The substrate 202 can be any substrate known to those skilled in the art. In one or more embodiments, the substrate 202 includes one or more of sapphire, silicon carbide, silicon (Si), quartz, magnesium oxide (MgO), zinc oxide (ZnO), spinel, etc. In one or more embodiments, the substrate 202 is not patterned prior to epitaxial layer growth. Therefore, in some embodiments, the substrate 202 is not patterned and can be considered flat or substantially flat. In other embodiments, the substrate 202 is patterned, for example, a patterned sapphire substrate (PSS).

[0064] In one or more embodiments, semiconductor layer 222 comprises a group III nitride material, and in a particular embodiment, comprises an epitaxial group III nitride material. In some embodiments, the group III nitride material includes one or more of gallium (Ga), aluminum (Al), and indium (In). Therefore, in some embodiments, semiconductor layer 222 comprises one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), and aluminum indium gallium nitride (AlInGaN). In one or more specific embodiments, semiconductor layer 222 comprises a p-type layer 210, an active region 220, and an n-type layer 204. In a particular embodiment, the n-type layer 204 and p-type layer 210 of the LED comprise n-doped and p-doped GaN, respectively.

[0065] In one or more embodiments, the group III nitride material layer forming the LED is deposited by one or more of sputtering deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced chemical vapor deposition (PECVD). In other embodiments, the substrate is placed in a metal-organic vapor phase epitaxy (MOVPE) reactor for epitaxy of the LED device layer to grow semiconductor layer 222.

[0066] In one or more embodiments, semiconductor layer 222 comprises a stack of undoped group III nitride material and doped group III nitride material. Depending on whether p-type or n-type group III nitride material is required, the group III nitride material may be doped with one or more of silicon (Si), oxygen (O), germanium (Ge), tin (Sn), zinc (Zn), beryllium (Be), carbon (C), or magnesium (Mg). In a specific embodiment, semiconductor layer 222 comprises an n-type layer 204, an active layer 220, and a p-type layer 210.

[0067] In one or more embodiments, the combined thickness of the semiconductor layer 222 is in the range from about 1 μm to about 10 μm, including the ranges from about 1 μm to about 9 μm, 1 μm to about 8 μm, 1 μm to about 7 μm, 1 μm to about 6 μm, 1 μm to about 5 μm, 1 μm to about 4 μm, 1 μm to about 3 μm, 2 μm to about 10 μm, including the ranges from about 2 μm to about 9 μm, 2 μm to about 8 μm, 2 μm to about 7 μm, 2 μm to about 6 μm, 2 μm to about 5 μm, 2 μm to about 4 μm, 2 μm to about 3 μm, 3 μm to about 10 μm, 3 μm to about 9 μm, 3 μm to about 10 ... m to about 8μm, 3μm to about 7μm, 3μm to about 6μm, 3μm to about 5μm, 3μm to about 4μm, 4μm to about 10μm, 4μm to about 9μm, 4μm to about 8μm, 4μm to about 7μm, 4μm to about 6μm, 4μm to about 5μm, 5μm to about 10μm, 5μm to about 9μm, 5μm to about 8μm, 5μm to about 7μm, 5μm to about 6μm, 6μm to about 10μm, 6μm to about 9μm, 6μm to about 8μm, 6μm to about 7μm, 7μm to about 10μm, 7μm to about 9μm, or 7μm to about 8μm.

[0068] In one or more embodiments, an active region 220 is formed between the n-type layer 204 and the p-type layer 210. The active region 220 may comprise any suitable material known to those skilled in the art. In one or more embodiments, the active region 220 is composed of a group III nitride material multiple quantum well (MQW) and a group III nitride electron blocking layer.

[0069] In some embodiments, semiconductor layer 222 and substrate 202 are etched to form an array of mesas 230a, 230b. Figure 3A In the illustrated embodiment, mesa 230a and 230b have a top surface 230t and at least one sidewall 230s. The mesa array includes a first mesa 230a and a second mesa 230b separated by a trench 226. The first mesa 230a and the second mesa 230b include a semiconductor layer 222. In one or more embodiments, the trench 226 has at least one sidewall 226s. The trench 226 extends to the n-type layer 204. In one or more embodiments, the first mesa 230a has a first width w1, and the second mesa 230b has a second width w2. In one or more embodiments, the first width w1 is greater than the second width w2.

[0070] In one or more embodiments, the light-emitting diode (LED) device 200 includes an anode contact 213 and a cathode contact 208. In one or more embodiments, the anode contact 213 is divided into two regions, a first anode region 218 and a second anode region 212. The first anode region 218 and the second anode region 212 have unequal dimensions. The first anode region 218 is on the top surface 230t of the first mesa 230a. The second anode region 212 is on the top surface 230t of the second mesa 230b.

[0071] In one or more embodiments, the size of the mesa 230b in an array emitting light with a centroid wavelength less than 590 nm is smaller than the size of the mesa 230b in an array emitting light with a centroid wavelength greater than 610 nm. In one or more embodiments, each array has its own anode regions 218, 212, which can be connected to their own separate current driver or to a current driver that switches between the two anodes using circuitry external to the LED. Thus, for the same drive current, an array with a smaller mesa 230b emits light with a centroid wavelength less than 590 nm, while an array with a larger mesa 230a emits light with a similar brightness level with a centroid wavelength greater than 610 nm. In one or more embodiments, the desired ratio of the small to the large area of ​​the mesa can be found by spectral measurements of current density from LEDs with standard anode contacts constructed from the same type of epitaxial wafer.

[0072] In one or more embodiments, a dielectric layer 206 is on at least one sidewall 226s of a trench 226. In one or more embodiments, the dielectric layer 206 includes, but is not limited to, oxides, such as silicon oxide (SiO2), aluminum oxide (Al2O3); and nitrides, such as silicon nitride (Si3N4). In one or more embodiments, the dielectric layer 206 comprises silicon nitride (Si3N4). In one or more embodiments, the dielectric layer 206 comprises silicon oxide (SiO2). In some embodiments, the composition of the dielectric layer 206 is non-stoichiometric with respect to an ideal chemical formula. For example, in some embodiments, the dielectric layer includes, but is not limited to, oxides (e.g., silicon oxide, aluminum oxide), nitrides (e.g., silicon nitride (SiN)), carbon oxides (e.g., silicon oxycarbonate (SiOC)), and oxynitrides (e.g., silicon oxycarbonitrile (SiNCO)). In one or more embodiments, the dielectric layer 206 comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0073] In one or more embodiments, the anode contact 213 comprises a reflective material or a transparent conductor. In one or more embodiments, the anode contact 213 comprises one or more of silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In one or more embodiments, the first anode region 218 and the second anode region 212 independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0074] In one or more embodiments, the cathode contact 208 is adjacent to the anode contact 213 and is electrically connected to the n-type layer 204.

[0075] In one or more embodiments, the cathode contact 208 comprises a metal selected from the group consisting of titanium (Ti), aluminum (Al), chromium (Cr), silver (Ag), gold (Au), alloys thereof, or multiple layers thereof.

[0076] refer to Figure 3B Electrical terminals 232 for an array emitting light with a center wavelength less than 590 nm and electrical terminals 228 for an array emitting light with a center wavelength greater than 610 nm are necessary. Additionally, a cathode contact terminal 230 is present.

[0077] Figure 4A A process flow diagram of method 250 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 4A Method 250 of the LED: In operation 252, an LED is provided for processing. As used in this specification and the appended claims, the term "provided" means that the LED is available for operation. In some embodiments, the LED has been manufactured. In other embodiments, the LED is manufactured according to one or more embodiments described herein. In operation 254, current flows through anode contact 213 to first anode contact region 218 to emit light with a centroid wavelength less than 590 nm.

[0078] Figure 4B A process flow diagram of method 260 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 4B Method 260 of the LED requires that, in operation 262, an LED is provided for processing. In operation 264, current flows through anode contact 213 to first anode contact region 218 and second anode contact region 212 to emit light with a centroid wavelength greater than 610 nm.

[0079] Figure 5A A top view of an LED device according to one or more embodiments is shown. Figure 5B It shows along Figure 5AThe cross-sectional views of the LED device taken from lines B1-B'1 and B2-B'2. Figure 5C It shows along Figure 5A The cross-sectional views of the LED device taken along lines C1-C'1 and C2-C'2 are shown. (Reference) Figures 5A-5C In one or more embodiments, the semiconductor layer 322 is grown on the substrate 302. According to one or more embodiments, the semiconductor layer 322 includes an epitaxial layer, a group III nitride layer, or an epitaxial group III nitride layer. In one or more embodiments, the semiconductor layer is an epitaxial semiconductor layer with a thickness of at least 1 micrometer.

[0080] Substrate 302 can be any substrate known to those skilled in the art. In one or more embodiments, substrate 302 includes one or more of sapphire, silicon carbide, silicon (Si), quartz, magnesium oxide (MgO), zinc oxide (ZnO), spinel, etc. In one or more embodiments, substrate 302 is not patterned prior to epitaxial layer growth. Therefore, in some embodiments, substrate 302 is not patterned and can be considered flat or substantially flat. In other embodiments, substrate 302 is patterned, for example, a patterned sapphire substrate (PSS).

[0081] In one or more embodiments, semiconductor layer 322 comprises a group III nitride material, and in a particular embodiment, comprises an epitaxial group III nitride material. In some embodiments, the group III nitride material comprises one or more of gallium (Ga), aluminum (Al), and indium (In). Therefore, in some embodiments, semiconductor layer 322 comprises one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), and aluminum indium gallium nitride (AlInGaN). In one or more embodiments, semiconductor layer 322 comprises a p-type layer 310, an active region 320, and an n-type layer 304. In a particular embodiment, the n-type layer 304 and p-type layer 310 of the LED comprise n-doped and p-doped GaN, respectively.

[0082] In one or more embodiments, the group III nitride material layer forming the LED is deposited by one or more of sputtering deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced atomic layer deposition (PEALD), and plasma-enhanced chemical vapor deposition (PECVD). In other embodiments, the substrate is placed in a metal-organic vapor phase epitaxy (MOVPE) reactor for epitaxy of the LED device layer to grow semiconductor layer 322.

[0083] In one or more embodiments, semiconductor layer 322 comprises a stack of undoped group III nitride material and doped group III nitride material. Depending on whether p-type or n-type group III nitride material is required, the group III nitride material may be doped with one or more of silicon (Si), oxygen (O), germanium (Ge), tin (Sn), zinc (Zn), beryllium (Be), carbon (C), or magnesium (Mg). In a specific embodiment, semiconductor layer 322 comprises an n-type layer 304, an active layer 320, and a p-type layer 310.

[0084] In one or more embodiments, the combined thickness of the semiconductor layer 322 is in the range from about 1 μm to about 10 μm, including the ranges from about 1 μm to about 9 μm, 1 μm to about 8 μm, 1 μm to about 7 μm, 1 μm to about 6 μm, 1 μm to about 5 μm, 1 μm to about 4 μm, 1 μm to about 3 μm, 2 μm to about 10 μm, including the ranges from about 2 μm to about 9 μm, 2 μm to about 8 μm, 2 μm to about 7 μm, 2 μm to about 6 μm, 2 μm to about 5 μm, 2 μm to about 4 μm, 2 μm to about 3 μm, 3 μm to about 10 μm, 3 μm to about 9 μm, 3 μm to about 10 ... m to about 8μm, 3μm to about 7μm, 3μm to about 6μm, 3μm to about 5μm, 3μm to about 4μm, 4μm to about 10μm, 4μm to about 9μm, 4μm to about 8μm, 4μm to about 7μm, 4μm to about 6μm, 4μm to about 5μm, 5μm to about 10μm, 5μm to about 9μm, 5μm to about 8μm, 5μm to about 7μm, 5μm to about 6μm, 6μm to about 10μm, 6μm to about 9μm, 6μm to about 8μm, 6μm to about 7μm, 7μm to about 10μm, 7μm to about 9μm, or 7μm to about 8μm.

[0085] In one or more embodiments, an active region 320 is formed between the n-type layer 304 and the p-type layer 310. The active region 320 may comprise any suitable material known to those skilled in the art. In one or more embodiments, the active region 320 is composed of a group III nitride material multiple quantum well (MQW) and a group III nitride electron blocking layer.

[0086] In some embodiments, semiconductor layer 322 and substrate 302 are etched to form arrays 324, 334 of mesas 336, 332. In one or more embodiments, the number of mesas 336, 332 in each array 324, 334 is varied. In one or more embodiments, array 324 emitting light with a centroid wavelength greater than 610 nm has more mesas 336 and fewer mesas 332 than array 334 emitting light with a centroid wavelength less than 590 nm. The desired ratio of the number of mesas 332, 336 in each array 334, 324 can be found by spectral-to-current density measurements of LEDs having standard anode contacts constructed from the same type of epitaxial wafer.

[0087] exist Figure 5B In the illustrated embodiment, mesa 336 has a top surface 336t and at least one sidewall 336s. Mesa array 324 includes a plurality of mesa 336 separated by trenches 326. The plurality of mesa 336 includes a semiconductor layer 322. In one or more embodiments, trench 326 has at least one sidewall 326s. Trench 326 extends into n-type layer 304.

[0088] exist Figure 5C In the illustrated embodiment, mesa 332 has a top surface 322t and at least one sidewall 322s. Mesa array 334 includes a plurality of mesa 332 separated by trenches 340. The plurality of mesa 332 includes a semiconductor layer 322. In one or more embodiments, trench 340 has at least one sidewall 340s. Trench 340 extends to n-type layer 304.

[0089] In one or more embodiments, the light-emitting diode (LED) device 300 includes an anode contact divided into two regions: a first anode region 318 and a second anode region 312. The first anode region 318 is on the top surface 336t of a plurality of mesa 336. The second anode region 312 is on the top surface 322t of a plurality of mesa 332.

[0090] refer to Figure 5B In one or more embodiments, the dielectric layer 306 fills the trench 326. (See reference...) Figure 5CIn one or more embodiments, the dielectric layer 306 fills the trench 340. In one or more embodiments, the dielectric layer 306 includes, but is not limited to, oxides, such as silicon oxide (SiO2), aluminum oxide (Al2O3); and nitrides, such as silicon nitride (Si3N4). In one or more embodiments, the dielectric layer 306 comprises silicon nitride (Si3N4). In one or more embodiments, the dielectric layer 306 comprises silicon oxide (SiO2). In some embodiments, the composition of the dielectric layer 306 is non-stoichiometric with respect to an ideal chemical formula. For example, in some embodiments, the dielectric layer includes, but is not limited to, oxides (e.g., silicon oxide, aluminum oxide), nitrides (e.g., silicon nitride (SiN)), carbon oxides (e.g., silicon oxycarbonate (SiOC)), and oxynitrides (e.g., silicon oxycarbonitrile (SiNCO)). In one or more embodiments, the dielectric layer 306 comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0091] In one or more embodiments, the anode contact comprises a reflective material or a transparent conductor. In one or more embodiments, the anode contact comprises one or more of silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO). In one or more embodiments, the first anode region 318 and the second anode region 312 independently comprise a material selected from one or more of silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0092] refer to Figure 5A In one or more embodiments, the light-emitting diode (LED) device 300 includes a cathode contact 308. In one or more embodiments, the cathode contact 308 is adjacent to the mesa array 334 and the mesa array 324 and is electrically connected to the n-type layer 304.

[0093] In one or more embodiments, the cathode contact 308 comprises a metal selected from the group consisting of titanium (Ti), aluminum (Al), chromium (Cr), silver (Ag), gold (Au), alloys thereof, or multiple layers thereof.

[0094] refer to Figure 5A Electrical terminals 329 for an array emitting light with a centroid wavelength less than 590 nm and electrical terminals 328 for an array emitting light with a centroid wavelength greater than 610 nm are necessary. Additionally, a cathode contact terminal 330 is present.

[0095] Figure 6AA process flow diagram of method 350 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 6A Method 350 of the LED: In operation 352, the LED is provided for processing. As used in this specification and the appended claims, the term "provided" means that the LED is available for operation. In some embodiments, the LED has been manufactured. In other embodiments, the LED is manufactured according to one or more embodiments described herein. In operation 354, current flows through anode contact 312 to emit light with a centroid wavelength less than 590 nm.

[0096] Figure 6B A process flow diagram of method 360 according to one or more embodiments is shown. In one or more embodiments, the operation... Figure 6B Method 360 of the LED requires that, in operation 362, an LED is provided for processing. In operation 364, current flows through anode contact 318 to emit light with a centroid wavelength greater than 610 nm.

[0097] Example

[0098] Various embodiments are listed below. It will be understood that the embodiments listed below can be combined with all aspects of the invention and other embodiments.

[0099] Example (a). A light-emitting diode (LED) device includes: a mesa including a semiconductor layer comprising an n-type layer, an active layer, and a p-type layer; an anode contact including a first anode region and a second anode region separated by a gap, the first anode region being on a top surface of the mesa and the second anode region being adjacent to the first anode region; a switch connecting the first anode region and the second anode region; and a cathode contact adjacent to the anode contact and electrically connected to the n-type layer.

[0100] Example (b). The LED device according to Example (a) wherein the first anode region has a first area and the second anode region has a second area, the second area being larger than the first area.

[0101] Example (c). The LED device according to Examples (a) to (b), wherein the width of the gap is greater than about 1 micrometer.

[0102] Example (d). The LED device according to Examples (a) to (c) further includes a first dielectric layer in the gap.

[0103] Example (e). The LED device according to Examples (a) to (d) further includes a second dielectric layer on the top surface of the anode contact and a mirror layer on the top surface of the first dielectric layer.

[0104] Example (f). The LED device according to Examples (a) to (e), wherein the first dielectric layer and the second dielectric layer independently comprise silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0105] Example (g). The LED device according to Examples (a) to (f) wherein the mirror layer comprises one or more of aluminum (Al), silver (Ag), gold (Au), copper (Cu), metal nitrides and their alloys.

[0106] Example (h). The LED device according to Examples (a) to (g) wherein the first anode region and the second anode region independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0107] Example (i). The LED device according to Examples (a) to (h) further includes an anode terminal on the anode contact, a cathode terminal on the cathode contact, and a switch terminal on the switch.

[0108] Example (j). A method of operating an LED device according to Examples (a) to (i), the method comprising: turning on a switch; and allowing current to flow through an anode contact to a first anode region to emit light with a centroid wavelength less than 590 nm.

[0109] Example (k). A method of operating an LED device according to Examples (a) to (i), the method comprising: closing a switch; and allowing current to flow through an anode contact to a first anode region and a second anode region to emit light with a centroid wavelength greater than 610 nm.

[0110] Example (l). A light-emitting diode (LED) device includes: a mesa array including a first mesa and a second mesa separated by a trench, the first mesa and the second mesa including semiconductor layers, the semiconductor layers including an n-type layer, an active layer and a p-type layer, the trench having at least one sidewall and extending to the n-type layer, the first mesa having a first width and the second mesa having a second width, the first width being greater than the second width; a first anode contact on the top surface of the first mesa; a second anode contact on the top surface of the second mesa; and a cathode contact adjacent to the first mesa and adjacent to the second mesa.

[0111] Example (m). The LED device according to Example (l) wherein the first anode contact and the second anode contact independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0112] Example (n). The LED device according to Examples (l) to (m) further includes a first anode terminal on a first anode contact, a second anode terminal on a second anode contact, and a cathode terminal on a cathode contact.

[0113] Example (o). The LED device according to Examples (l) to (n) further includes a dielectric layer on at least one sidewall of the trench.

[0114] Example (p). The LED device according to Examples (l) to (o) wherein the dielectric layer comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0115] Example (q). A method of operating an LED device according to Examples (l) to (p), the method comprising: flowing a current through a first anode contact to emit light with a centroid wavelength less than 590 nm.

[0116] Example (r). A method of operating an LED device according to Examples (l) to (p), the method comprising: flowing a current through a second anode contact to emit light with a centroid wavelength greater than 610 nm.

[0117] Example(s). A light-emitting diode (LED) device includes: a first mesa array including a plurality of first mesas separated by a first trench filled with a dielectric layer; a second mesa array including a plurality of second mesas separated by a second trench filled with a dielectric layer; a first anode contact on a top surface of the first mesa array; a second anode contact on a top surface of the second mesa array; and a cathode contact adjacent to the first mesa array and the second mesa array, wherein the plurality of first mesas and the plurality of second mesas include semiconductor layers, the semiconductor layers including an n-type layer, an active layer and a p-type layer, and the first trench and the second trench extend to the n-type layer.

[0118] Example (t). The LED device according to Example (s) wherein the first anode contact and the second anode contact independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

[0119] Example (u). The LED device according to Examples (s) to (t) further includes a first anode terminal on a first anode contact, a second anode terminal on a second anode contact, and a cathode terminal on a cathode contact.

[0120] Example (v). The LED device according to Examples (s) to (u), wherein the dielectric layer comprises silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x It is one or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

[0121] Example (w). A method of operating an LED device according to Examples (s) to (v), the method comprising: flowing a current through a first anode contact to emit light with a centroid wavelength less than 590 nm.

[0122] Example (x). A method of operating an LED device according to Examples (s) to (v), the method comprising: flowing current through a second anode contact to emit light with a centroid wavelength greater than 610 nm.

[0123] In the context of describing the materials and methods discussed herein (especially in the context of the following claims), the terms “a,” “an,” and “the,” and similar designations, should be interpreted as encompassing both the singular and plural, unless otherwise indicated herein or clearly contradicted by the context. Unless otherwise indicated herein, the description of ranges of values ​​herein is intended only as a shorthand method for individually referring to each individual value falling within that range, and each individual value is incorporated into this specification as if it were individually described herein. Unless otherwise indicated herein or clearly contradicted by the context, all methods described herein can be performed in any suitable order. The use of any and all example or exemplary language (e.g., “such as”) provided herein is intended only to better elucidate the materials and methods and does not constitute a limitation on the scope unless otherwise claimed. No language in this specification should be construed as indicating that any unclaimed element is essential to the practice of the disclosed materials and methods.

[0124] Throughout this specification, the terms first, second, third, etc., may be used to describe various elements, and these elements should not be limited by these terms. These terms may be used to distinguish one element from another.

[0125] Throughout this specification, references to a layer, region, or substrate being “on” or “extending” to another element mean that it may be directly on or directly extended to another element, or that intermediate elements may be present. When an element is referred to as being “directly on” or “directly extended to” another element, there may be no intermediate elements present. Furthermore, when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element and / or connected or coupled to the other element via one or more intermediate elements. When an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intermediate elements between that element and the other element. It will be understood that these terms are intended to cover different orientations of elements, except for any orientations depicted in the figures.

[0126] Relative terms such as “below,” “above,” “top,” “bottom,” “horizontal,” or “vertical” may be used herein to describe the relationship of one element, layer, or region relative to another element, layer, or region, as illustrated in the figures. It will be understood that these terms are intended to cover different orientations of the device, in addition to those depicted in the figures.

[0127] Throughout this specification, references to "one embodiment," "some embodiments," "one or more embodiments," or "embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of this disclosure. Therefore, the appearance of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in an embodiment" throughout this specification does not necessarily refer to the same embodiment of this disclosure. In one or more embodiments, a particular feature, structure, material, or characteristic is combined in any suitable manner.

[0128] Although this disclosure has been described with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of this disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the methods and apparatus of this disclosure without departing from the spirit and scope of this disclosure. Therefore, it is intended that this disclosure include modifications and variations within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting diode (LED) device, comprising: A mesa including a semiconductor layer, wherein the semiconductor layer includes an n-type layer, an active layer, and a p-type layer; An anode contact includes a first anode region and a second anode region separated by a gap, the first anode region being on the top surface of the platform, and the second anode region being adjacent to the first anode region. The first dielectric layer in the gap; A mirror layer on the top surface of the first dielectric layer; A switch connecting the first anode region and the second anode region; and The cathode contact adjacent to the anode contact and electrically connected to the n-type layer The switch is configured such that when the switch is open, current is injected only into the first anode region, and when the switch is closed, current is injected into both the first anode region and the second anode region, thereby allowing changes in current density and color without significant changes in brightness.

2. The LED device according to claim 1, wherein the first anode region has a first area, and the second anode region has a second area, the second area being larger than the first area.

3. The LED device according to claim 1, wherein the width of the gap is greater than 1 micrometer.

4. The LED device according to claim 1, further comprising a second dielectric layer on the top surface of the anode contact.

5. The LED device according to claim 4, wherein the first dielectric layer and the second dielectric layer independently comprise silicon oxide (SiO2), aluminum oxide (Al2O3), and silicon nitride (SiN). x One or more of the following: titanium oxide (TiO2), niobium oxide (Nb2O5), zirconium oxide (ZrO2), and hafnium oxide (HfO2).

6. The LED device according to claim 1, wherein the mirror layer comprises one or more of aluminum (Al), silver (Ag), gold (Au), copper (Cu), metal nitrides and their alloys.

7. The LED device according to claim 1, wherein the first anode region and the second anode region independently comprise one or more materials selected from silver (Ag), indium tin oxide (ITO), nickel (Ni), palladium (Pd), platinum (Pt), and zinc oxide (ZnO).

8. The LED device according to claim 1, further comprising an anode terminal on the anode contact, a cathode terminal on the cathode contact, and a switch terminal on the switch.

9. A method of operating the LED device according to claim 1, the method comprising: Turn on the switch; and Current is allowed to flow through the anode contact to the first anode region to emit light with a centroid wavelength of less than 590 nm.

10. A method of operating the LED device according to claim 1, the method comprising: Close the switch; and Current is allowed to flow through the anode contact to the first anode region and the second anode region to emit light with a centroid wavelength greater than 610 nm.

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