An epitaxial reactor

Abstract

The epitaxial reactor disclosed by the application comprises a graphite chamber and a reaction chamber, the graphite chamber comprises an upper half moon and a lower half moon, the upper half moon and the lower half moon are arranged in the reaction chamber, and a gas flow channel for the process gas to flow through is formed between the upper half moon and the lower half moon, and the epitaxial reactor further comprises a distance measuring device, which can measure the positions of the upper half moon and the lower half moon in the reaction chamber, so as to realize accurate positioning of the graphite chamber relative to the reaction chamber. Before the graphite chamber is removed each time, the installation position of the graphite chamber in the reaction chamber can be accurately obtained by the distance measuring device, and the position is used as a position reference. When the graphite chamber is reinstalled, the distance measuring device is used again to measure the distance, and according to the comparison of the data before and after, it can be clearly judged whether the position of the graphite chamber in the reaction chamber is offset or not, so as to realize accurate positioning of the graphite chamber relative to the reaction chamber, and thus the temperature field of the reaction chamber is not changed after the graphite chamber is reinstalled.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically, to an epitaxial reactor. Background Technology

[0002] With the continuous development of the times, semiconductor devices account for an increasingly larger proportion in the field of microelectronics, and epitaxial growth is a particularly important step in semiconductor device manufacturing. Currently, the most important method for epitaxial growth is chemical vapor deposition (CVD), which uses dichlorosilane, trichlorosilane, silicon tetrachloride, or silane as reactant gases. Under a certain protective atmosphere, silicon atoms are generated and deposited on a heated substrate. The substrate material is generally Si, SiO2, Si3N4, etc.

[0003] In the field of microelectronics, a CVD reactor is used to deposit a thin and uniform layer of semiconductor material onto a substrate. After a series of processes such as cleaning, dicing, and fabrication, electronic devices, especially integrated circuit wafers, are obtained. During this growth process, semiconductor material is deposited simultaneously on the substrate and the inner wall of the reaction chamber, creating a hot-wall effect in the CVD reactor. This effect causes a new thin layer of semiconductor material to form in the inner wall of the graphite chamber at each stage of epitaxial growth. After several different processes, a thick layer of material grows in the graphite chamber. This layer of material alters the chamber structure and the direction of the reactive gases, thus affecting the epitaxial growth process.

[0004] To address this issue, the common approach is to periodically remove the graphite chamber from the reaction chamber and remove the material grown on its inner wall using physical or chemical methods. The cleaned graphite chamber is then reinstalled. During this installation, the correct placement is often determined using measuring tapes, depth gauges, calipers, or even visual inspection. This positioning method is prone to significant errors, and misalignment of the graphite chamber can easily alter the temperature field within the reaction chamber, affecting the epitaxial growth process. When this occurs, it is often necessary to remove the graphite chamber again and reposition it, resulting in repeated adjustments that consume considerable time and reduce production efficiency.

[0005] Therefore, how to achieve the installation and positioning of the graphite chamber has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] In view of this, the purpose of the present invention is to provide an epitaxial reactor for installing and positioning a graphite chamber.

[0007] To achieve the above objectives, the present invention provides the following technical solution:

[0008] An epitaxial reactor includes a graphite chamber and a reaction chamber. The graphite chamber comprises an upper half-moon and a lower half-moon, both disposed within the reaction chamber, and a gas flow channel for process gas flow is formed between the upper and lower half-moons. The reactor further includes:

[0009] A ranging device is used to determine the positions of the upper half-moon and the lower half-moon inside the reaction chamber, so as to locate the graphite chamber.

[0010] Optionally, in the above-described epitaxial reactor, the reaction chamber includes:

[0011] A quartz bell jar, wherein the graphite chamber is disposed within the quartz bell jar;

[0012] An air inlet flange is located at the first end of the quartz bell jar;

[0013] An exhaust flange is disposed at the second end of the quartz bell jar and along the flow direction of the process gas flow, while the inlet flange is located upstream of the exhaust flange.

[0014] Optionally, in the above-described epitaxial reactor, the ranging device includes:

[0015] A first distance measuring device is disposed on a first flange and is used to measure the distance between the upper half of the moon and the first flange, wherein the first flange is the air intake flange or the exhaust flange.

[0016] The second distance measuring device is disposed on the second flange and is used to measure the distance between the lower half of the moon and the second flange, which is the intake flange or the exhaust flange.

[0017] Optionally, in the above-described epitaxial reactor, the graphite chamber further includes:

[0018] An upstream heat shield is disposed at the upstream end of the upper half of the moon and the lower half of the moon, along the flow direction of the process airflow.

[0019] The downstream heat shield is located at the downstream end of the upper half of the moon and the lower half of the moon, along the flow direction of the process airflow.

[0020] Optionally, in the above-mentioned epitaxial reactor, the ranging device includes an upstream ranging device, which is disposed on the air inlet flange and is used to detect the positions of at least two positioning points at different heights along the vertical direction of the upstream heat shield, so as to determine the angle between the upstream heat shield and the vertical direction.

[0021] If the angle between the upstream heat shield and the vertical direction is within a preset angle range, the graphite chamber is positioned by the distance between the air inlet flange and the upstream heat shield.

[0022] Optionally, in the above-mentioned epitaxial reactor, the ranging device includes a downstream ranging device, which is disposed on the tail gas flange and is used to detect the positions of at least two positioning points at different heights in the vertical direction of the downstream heat shield by the change of the ranging angle, so as to determine the angle between the downstream heat shield and the vertical direction.

[0023] If the angle between the downstream heat shield and the vertical direction is within a preset angle range, the graphite chamber is positioned by the distance between the exhaust flange and the downstream heat shield.

[0024] Optionally, in the above-described epitaxial reactor, the graphite chamber further includes:

[0025] A graphite insulation layer is disposed between the upper half of the moon and the graphite chamber;

[0026] A lower graphite insulation layer is disposed between the lower half of the moon and the graphite chamber, and is fastened to the upper graphite insulation layer. The upper graphite insulation layer, the lower graphite insulation layer, the upstream heat insulation cover, and the downstream heat insulation cover form an insulation layer.

[0027] Optionally, in the above-mentioned epitaxial reactor, an upper positioning part is provided on the upper graphite insulation layer, and a lower graphite insulation layer is provided with a lower positioning part for engaging with the upper positioning part.

[0028] Optionally, in the above-mentioned epitaxial reactor, the graphite upper insulation layer is provided with a limiting step for the upstream heat insulation cover and the downstream heat insulation cover to be embedded;

[0029] The graphite lower insulation layer is provided with a limiting step for the upstream and downstream heat insulation covers to be embedded.

[0030] Optionally, in the above-described epitaxial reactor, the ranging device is a laser ranging device.

[0031] The epitaxial reactor provided by the present invention includes a graphite chamber and a reaction chamber. The graphite chamber includes an upper half-moon and a lower half-moon, both of which are disposed within the reaction chamber. An airflow channel for process airflow is formed between the upper half-moon and the lower half-moon. The epitaxial reactor also includes a ranging device, which can determine the position of the upper half-moon and the lower half-moon inside the reaction chamber to achieve precise positioning of the graphite chamber relative to the reaction chamber.

[0032] Because the graphite chamber comes into direct contact with the process airflow during the first and second halves of the month, deposits will form. Therefore, it is necessary to periodically remove the graphite chamber for deposit removal. Before each removal, a ranging device can accurately determine the installation position of the graphite chamber in the reaction chamber. Using this positional reference, the ranging device is used again to measure the distance when reinstalling the graphite chamber. By comparing the data before and after, it is clear whether the position of the graphite chamber in the reaction chamber has shifted. If there is a shift, the graphite chamber can be readjusted according to the magnitude of the deviation, avoiding the need for reinstallation due to inaccurate positioning of the graphite chamber. The positional reference can be designed according to the actual situation when initially installing the graphite chamber.

[0033] Compared with existing technologies, the epitaxial reactor provided by this invention has a simple structure, is easy to operate, and has high precision. It can achieve precise positioning of the graphite chamber relative to the reaction chamber, thereby ensuring that the temperature field of the reaction chamber will not change after the graphite chamber is reinstalled, making the epitaxial process more stable and suitable for widespread use. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the structure of the epitaxial growth apparatus disclosed in an embodiment of the present invention;

[0036] Figure 2 The ranging device and graphite cavity insulation layer disclosed in the embodiments of the present invention;

[0037] Figure 3 This is a schematic diagram of the connection structure of the graphite insulation layer disclosed in an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the disassembled structure of the graphite insulation layer disclosed in an embodiment of the present invention;

[0039] Figure 5 This is a cross-sectional view of the graphite insulation layer disclosed in an embodiment of the present invention;

[0040] Figure 6 This is a front view of the upstream heat shield disclosed in an embodiment of the present invention;

[0041] Figure 7 This is a side view of the upstream heat shield disclosed in an embodiment of the present invention;

[0042] Figure 8This is a front view of the downstream heat shield disclosed in an embodiment of the present invention;

[0043] Figure 9 This is a side view of the downstream heat shield disclosed in an embodiment of the present invention.

[0044] Among them, 100 is the reaction chamber, 110 is the quartz bell jar, 120 is the air inlet flange, and 130 is the exhaust flange;

[0045] 200 is the graphite chamber, 201 is the airflow channel, 210 is the upper graphite insulation layer, 211 is the upper half of the moon, 220 is the lower graphite insulation layer, 221 is the lower half of the moon, 230 is the upstream heat insulation cover, 240 is the downstream heat insulation cover, and 250 is the power tray.

[0046] 300 is an induction coil;

[0047] 400 is the upstream ranging device, and 410 is the downstream ranging device. Detailed Implementation

[0048] The core of this invention is to disclose an epitaxial reactor for the installation and positioning of a graphite chamber.

[0049] Hereinafter, embodiments will be described with reference to the accompanying drawings. Furthermore, the embodiments shown below do not limit the scope of the invention as described in the claims. Additionally, the complete contents of the configurations represented in the embodiments below are not limited to those necessary for the solution of the invention described in the claims.

[0050] Combination Figure 1 The epitaxial reactor disclosed in this embodiment of the invention includes a graphite chamber 200 and a reaction chamber 100. The graphite chamber 200 includes an upper crescent 211 and a lower crescent 221, both of which are disposed within the reaction chamber 100. An airflow channel 201 for process airflow is formed between the upper crescent 211 and the lower crescent 221. The epitaxial reactor also includes a ranging device, which can determine the positions of the upper crescent 211 and the lower crescent 221 within the reaction chamber 100 to achieve precise positioning of the graphite chamber 200 relative to the reaction chamber 100.

[0051] Since the upper half of the month (211) and the lower half of the month (221) are in direct contact with the process airflow, deposits will form. Therefore, the graphite chamber 200 needs to be periodically removed for deposit removal. Before each removal of the graphite chamber 200, a ranging device can accurately determine its installation position in the reaction chamber 100. Using this positional reference, when reinstalling the graphite chamber 200, the ranging device is used again to measure the distance. By comparing the data before and after, it can be clearly determined whether the position of the graphite chamber 200 in the reaction chamber 100 has shifted. If there is a shift, the graphite chamber 200 can be readjusted according to the magnitude of the deviation, avoiding the need for reinstallation due to inaccurate positioning of the graphite chamber 200. The positional reference for the initial installation of the graphite chamber 200 can be designed according to the actual situation.

[0052] Compared with the prior art, the epitaxial reactor disclosed in this embodiment of the invention has a simple structure, is easy to operate, and has high precision. It can achieve precise positioning of the graphite chamber 200 relative to the reaction chamber 100, thereby ensuring that the temperature field of the reaction chamber will not change after the graphite chamber 200 is reinstalled, making the epitaxial process more stable and suitable for widespread use.

[0053] Combination Figure 1 The reaction chamber 100 includes a quartz bell jar 110, an inlet flange 120, and an outlet flange 130. The graphite chamber 200 is disposed within the quartz bell jar 110. The inlet flange 120 is located at the first end of the quartz bell jar 110; the outlet flange 130 is located at the second end of the quartz bell jar 110, and the inlet flange 120 is upstream of the outlet flange 130 along the flow direction of the process gas flow. The process gas flow enters the graphite chamber 200 through the inlet flange 120, flows through the power tray 250 located on the lower half-moon 221 and the grown wafer, and finally exits through the outlet flange 130.

[0054] During the installation of the graphite chamber 200, the upper half-moon 211 and the lower half-moon 221 can be sequentially inserted into the quartz bell jar 110. In a specific embodiment, to ensure that the upper half-moon 211 and the lower half-moon 221 are in the designated positions after reinstallation, the ranging device includes a first ranging element and a second ranging element. The first ranging element can be fixedly mounted on a first flange to measure the distance between the upper half-moon 211 and the first flange, which can be an inlet flange 120 or an exhaust flange 130. By comparing with a preset distance, it can be determined whether the installation position of the upper half-moon 211 is accurate. The second ranging element can be fixedly mounted on a second flange to measure the distance between the lower half-moon 221 and the reaction chamber 100. The second flange can be an inlet flange 120 or an exhaust flange 130. By comparing with a preset distance, it can be determined whether the installation position of the lower half-moon 221 is accurate.

[0055] The preset distance is the distance between the upper half of the graphite chamber 200 (211) and the lower half of the graphite chamber 221 and the inlet flange 120 or the exhaust flange 130 before the graphite chamber 200 is reinstalled, or the distance designed by the operator.

[0056] To simplify the installation structure, the first and second ranging elements can be the same ranging element. The installation position of this ranging element is fixed, and by detecting changes in the angle, the installation positions of the upper half of the moon 211 and the lower half of the moon 221 can be determined.

[0057] like Figure 1 As shown, an induction coil 300 is provided outside the reaction chamber 100 to heat the reaction chamber of the graphite chamber 200.

[0058] The graphite chamber 200 also includes an upstream heat shield 230 and a downstream heat shield 240. Along the flow direction of the process airflow, the upstream heat shield 230 is located at the upstream end of the upper half of the moon 211 and the lower half of the moon 221, and the downstream heat shield 240 is located at the downstream end of the upper half of the moon 211 and the lower half of the moon 221.

[0059] When the graphite chamber 200 is installed outside the reaction chamber 100 and then placed inside the reaction chamber 100 as a whole, if the upper half-moon 211 and the lower half-moon 221 are misaligned, their end faces will be on different planes. This will cause the upstream heat shield 230 or the downstream heat shield 240, which is in contact with the end faces of the upper half-moon 211 and the lower half-moon 221, to warp. In this case, by checking whether the upstream heat shield 230 and the downstream heat shield 240 are placed vertically, it can be determined whether there is a positional deviation between the upper half-moon 211 and the lower half-moon 221. Figure 1 As shown, if there is no misalignment between the upper half of the month 211 and the lower half of the month 221, the upstream heat shield 230 and the downstream heat shield 240 are both in contact with the end faces of the upper half of the month 211 and the lower half of the month 221 and are placed vertically.

[0060] In a specific embodiment of the present invention, the ranging device includes an upstream ranging device 400, which is mounted on the air inlet flange 120. By detecting changes in the ranging angle, the upstream heat shield 230 detects the positions of at least two positioning points at different heights along the vertical direction, thus determining the angle between the upstream heat shield 230 and the vertical direction. If the angle between the upstream heat shield 230 and the vertical direction is within a preset angle range, it indicates that there is no misalignment between the upper half-moon 211 and the lower half-moon 221. The installation position of the graphite chamber 200 can be determined by the distance between the air inlet flange 120 and the upstream heat shield 230. If misalignment exists, the positions of the upper half-moon 211, the lower half-moon 221, the upstream heat shield 230, and the downstream heat shield 240 need to be adjusted.

[0061] In another specific embodiment of the present invention, the ranging device includes a downstream ranging device 410, which is disposed on the exhaust flange 130. By detecting the change in the ranging angle, the device detects the positions of at least two positioning points at different heights along the vertical direction of the downstream heat shield 240, thereby determining the angle between the downstream heat shield 240 and the vertical direction. If the angle between the downstream heat shield 240 and the vertical direction is within a preset angle range, it indicates that there is no misalignment between the upper half-moon 211 and the lower half-moon 221. The installation position of the graphite chamber 200 can be located by the distance between the exhaust flange 130 and the downstream heat shield 240.

[0062] The preset angle can be set according to actual needs. For example, it can be determined that the upstream heat shield 230 or the downstream heat shield 240 is not tilted within a range of ±2°.

[0063] Because horizontal deviations (misalignments) occur at the positions of the upper half of the month (211) and the lower half of the month (221), the end faces of the two structures will be on different planes, causing the upstream heat shield 230 and the downstream heat shield 240 to tilt. Therefore, by selecting positioning points at different heights, it is possible to measure whether the upstream heat shield 230 and the downstream heat shield 240 are tilted when the upper half of the month (211) and the lower half of the month (221) are misaligned. Alternatively, by directly comparing with the marked distances, it is also possible to directly determine whether the upstream heat shield 230 and the downstream heat shield 240 are tilted and whether the installation position is accurate.

[0064] For example, at least one of the positioning points is at the same height as the upstream ranging device 400 or the downstream ranging device 410, so that the upstream ranging device 400 or the downstream ranging device 410 can directly obtain the relative distance between the graphite chamber 200 and the reaction chamber 100. The other positioning points are measured by changing the ranging angle of the upstream ranging device 400 or the downstream ranging device 410. Furthermore, the spacing between the positioning points is controlled to be relatively large, so that the detection results of the upstream ranging device 400 or the downstream ranging device 410 are more obvious when the upstream heat shield 230 and the downstream heat shield 240 are tilted.

[0065] When the upstream ranging device 400 is a laser ranging device, it emits several laser pulses towards the upstream heat shield 230 and times them. Timing stops when reflected light is received. The round-trip time determines whether the upstream heat shield 230 is properly positioned. When the upstream heat shield 230 is properly positioned, the installation position between the graphite chamber 200 and the reaction chamber 100 can be determined by the distance between the upstream ranging device 400 and the upstream heat shield 230. Correspondingly, the downstream ranging device 410 can also be a laser ranging device.

[0066] It should be noted that the upstream ranging device 400 and the downstream ranging device 410 can also be set simultaneously, and multiple positioning points can be set to improve the positioning accuracy.

[0067] like Figure 6 and Figure 8 As shown, the upstream heat shield 230 is provided with vents for purging the upper half-moon 211 and the lower half-moon 221, vents for providing power to the power tray 250, functional holes for temperature measurement, and square slots for process gas to flow out. The downstream heat shield 240 is provided with vents for purging the upper half-moon 211 and the lower half-moon 221, and square slots for process gas to flow in. The positioning points should be set to avoid the positions of these structural holes to avoid errors when measuring distances.

[0068] After confirming the positions of the graphite chamber 200 and the reaction chamber 100, an air intake assembly is installed between the upstream heat shield 230 and the air intake flange 120, and an exhaust gas treatment assembly is installed between the downstream heat shield 240 and the exhaust gas flange 130 to fix the positions of the graphite chamber 200 and the reaction chamber 100. The exhaust gas treatment assembly includes a quartz cylinder, an exhaust gas treatment barrel, etc.

[0069] To achieve thermal insulation of the reaction chamber, the graphite chamber 200 also includes an upper graphite insulation layer 210 and a lower graphite insulation layer 220. The upper graphite insulation layer 210 is disposed between the upper half-moon 211 and the graphite chamber 200, and the lower graphite insulation layer 220 is disposed between the lower half-moon 221 and the graphite chamber 200, and is fastened to the upper graphite insulation layer 210. Simultaneously, the upstream heat insulation cover 230 and the downstream heat insulation cover 240 also have a thermal insulation function, reducing heat dissipation. The upper graphite insulation layer 210, the lower graphite insulation layer 220, the upstream heat insulation cover 230, and the downstream heat insulation cover 240 together form an insulation layer for insulating the reaction chamber.

[0070] Combination Figure 3 and Figure 4 The upper graphite insulation layer 210 is provided with an upper positioning part, and the lower graphite insulation layer 220 is provided with a lower positioning part for engaging with the upper positioning part. The upper and lower positioning parts can be positioning steps.

[0071] like Figure 2 and Figure 5 As shown, the upper graphite insulation layer 210 is provided with limiting steps for the upstream heat insulation cover 230 and the downstream heat insulation cover 240 to be embedded, and the lower graphite insulation layer 220 is provided with limiting steps for the upstream heat insulation cover 230 and the downstream heat insulation cover 240 to be embedded. Combined with... Figure 7 and Figure 9 The upstream heat shield 230 and the downstream heat shield 240 are provided with mounting steps for embedding the limiting steps.

[0072] The aforementioned ranging device can be any of the various ranging elements, such as a laser ranging device or an ultrasonic ranging device, as long as it can achieve automatic ranging function.

[0073] The terms "first" and "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units may include steps or units not listed, but rather steps or units not listed.

[0074] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0075] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed, and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. The scope of this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described application concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. An epitaxial reactor, comprising a graphite chamber (200) and a reaction chamber (100), wherein the graphite chamber (200) comprises an upper half-moon (211) and a lower half-moon (221), both the upper half-moon (211) and the lower half-moon (221) being disposed within the reaction chamber (100), and a gas flow channel (201) for process gas flow is formed between the upper half-moon (211) and the lower half-moon (221), characterized in that, Also includes: A ranging device is used to determine the positions of the upper half-moon (211) and the lower half-moon (221) inside the reaction chamber (100) to achieve positioning of the graphite chamber (200); The reaction chamber (100) includes an inlet flange (120); The graphite chamber (200) further includes an upstream heat shield (230) and a downstream heat shield (240). Along the flow direction of the process airflow, the upstream heat shield (230) is located at the upstream end of the upper half of the moon (211) and the lower half of the moon (221), and the downstream heat shield (240) is located at the downstream end of the upper half of the moon (211) and the lower half of the moon (221). The ranging device includes an upstream ranging device (400), which is disposed on the air inlet flange (120) and is used to detect the positions of at least two positioning points at different heights along the vertical direction of the upstream heat shield (230) to determine the angle between the upstream heat shield (230) and the vertical direction. If the angle between the upstream heat shield (230) and the vertical direction is within a preset angle range, the graphite chamber (200) is positioned by the distance between the air inlet flange (120) and the upstream heat shield (230).

2. The epitaxial reactor as described in claim 1, characterized in that, The reaction chamber (100) includes: A quartz bell jar (110), wherein the graphite chamber (200) is disposed within the quartz bell jar (110); The air inlet flange (120) is located at the first end of the quartz bell jar (110); The exhaust flange (130) is located at the second end of the quartz bell jar (110) and along the flow direction of the process gas flow, while the inlet flange (120) is located upstream of the exhaust flange (130).

3. The epitaxial reactor as described in claim 2, characterized in that, The ranging device includes a downstream ranging device (410), which is disposed on the exhaust flange (130) and is used to detect the positions of at least two positioning points at different heights along the vertical direction of the downstream heat shield (240) to determine the angle between the downstream heat shield (240) and the vertical direction. If the angle between the downstream heat shield (240) and the vertical direction is within a preset angle range, the graphite chamber (200) is positioned by the distance between the exhaust flange (130) and the downstream heat shield (240).

4. The epitaxial reactor as described in claim 1, characterized in that, The graphite chamber (200) further includes: A graphite upper insulation layer (210) is disposed between the upper half of the moon (211) and the graphite chamber (200); A lower graphite insulation layer (220) is disposed between the lower half of the moon (221) and the graphite chamber (200), and is fastened to the upper graphite insulation layer (210). The upper graphite insulation layer (210), the lower graphite insulation layer (220), the upstream heat shield (230), and the downstream heat shield (240) form an insulation layer.

5. The epitaxial reactor as described in claim 4, characterized in that, The upper graphite insulation layer (210) is provided with an upper positioning part, and the lower graphite insulation layer (220) is provided with a lower positioning part for engaging with the upper positioning part.

6. The epitaxial reactor as described in claim 4, characterized in that, The graphite upper insulation layer (210) is provided with a limiting step for the upstream heat insulation cover (230) and the downstream heat insulation cover (240) to be embedded; The graphite lower insulation layer (220) is provided with a limiting step for the upstream heat insulation cover (230) and the downstream heat insulation cover (240) to be embedded.

7. The epitaxial reactor according to any one of claims 1 to 6, characterized in that, The ranging device is a laser ranging device.

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