An adaptive thermal diode and method of manufacturing the same

Abstract

The application provides a self-adaptive heat diode and a manufacturing method thereof, wherein the self-adaptive heat diode comprises a mutually buckled upper cover body and a lower shell, and a sealed fluid passage cavity is formed between the upper cover body and the lower shell; an evaporation end, a silicon wafer substrate and a condensation end are arranged in the lower shell from left to right; a plurality of linear array distributed grooves are arranged on the silicon wafer substrate; the depth of each groove gradually decreases from the evaporation end to the condensation end; the width of each groove gradually decreases from the evaporation end to the condensation end, so that a wedge structure is formed between each adjacent two grooves; the upper surface width of each wedge structure gradually widens from the evaporation end to the condensation end; and the micro-channel structure with gradient wettability is formed by the cooperation of the grooves and the wedge structures. The self-adaptive heat diode can make the heat dissipation working medium realize self-adaptive movement in the horizontal direction to successfully return to the condensation end, so that the heat diode can realize one-way heat transfer in different directions.

Description

Technical Field

[0001] This invention relates to the field of thermal diode technology, and in particular to an adaptive thermal diode and its manufacturing method. Background Technology

[0002] A thermal diode is a device that uses the principle of phase change heat transfer to direct heat flow in a predetermined direction and then reverses it. Currently, as research on thermal diodes continues to deepen, more and more thermal management functions are being discovered to meet people's usage needs.

[0003] In conventional heat pipes, the condenser end is affected by the ambient temperature, causing the condensate to evaporate due to the high external temperature, preventing it from flowing back to the evaporator end. Furthermore, since phase change heat dissipation relies on liquid vaporization and condensation to transfer heat, this process is affected by gravity. Current technologies related to heat diodes mostly allow unidirectional heat transfer only in the vertical direction. In the horizontal direction, gravity prevents the liquid from naturally flowing back to the heat source, and the fluid may concentrate in certain areas while other areas experience insufficient fluid, reducing the heat transfer efficiency of the heat pipe. Summary of the Invention

[0004] The first objective of this invention is to provide an adaptive thermal diode that enables the heat dissipation medium to move adaptively in the horizontal direction to successfully return to the condenser end, thereby enabling the thermal diode to achieve unidirectional heat transfer in different directions.

[0005] A second objective of this invention is to provide a method for manufacturing an adaptive thermal diode.

[0006] This invention provides an adaptive thermal diode, comprising an upper cover and a lower housing that are interlocked, forming a sealed fluid channel cavity between the upper cover and the lower housing. Within the lower housing, from left to right, are an evaporation end, a silicon substrate, and a condensation end. On the silicon substrate, a plurality of trenches are arranged in a linear array. The depth and width of each trench gradually decrease from the evaporation end to the condensation end, so that a wedge-shaped structure is formed between each adjacent pair of trenches. The upper surface width of each wedge-shaped structure gradually increases from the evaporation end to the condensation end. The trenches and wedge-shaped structures cooperate to form a microchannel structure with gradient wettability.

[0007] According to an adaptive thermal diode provided by the present invention, the condensation end is an inclined plate, the upper surface of the condensation end is inclined upward from left to right, and the left end of the condensation end is flush with the right end of the silicon wafer substrate.

[0008] According to an adaptive thermal diode provided by the present invention, the upper surface of the evaporation end is a horizontal plane, and the bottom of the trench is higher than the upper surface of the evaporation end.

[0009] According to an adaptive thermal diode provided by the present invention, the lower housing has an elliptical groove, and the evaporation end, the silicon substrate and the condensation end are all disposed in the elliptical groove.

[0010] According to an adaptive thermal diode provided by the present invention, a mounting groove for mounting the silicon wafer substrate is provided on the bottom wall of the elliptical groove, and the silicon wafer substrate is bonded and fixed to the mounting groove.

[0011] According to an adaptive thermal diode provided by the present invention, the upper port of the lower housing is provided with a ring of insertion protrusions, and the upper cover is provided with insertion grooves adapted to the insertion protrusions, and the lower housing and the upper cover are inserted and fastened together.

[0012] According to an adaptive thermal diode provided by the present invention, the surface of the microchannel structure is hydrophilic in the portion near the evaporation end and hydrophobic in the portion near the condensation end.

[0013] The present invention also provides a method for manufacturing the above-mentioned adaptive thermal diode, comprising the following steps:

[0014] The upper cover and lower shell are machined separately by a milling machine so that the upper cover and lower shell can form a closed fluid channel cavity after being fitted together.

[0015] An evaporation end and a condensation end are respectively machined at the left and right ends of the lower housing using a milling machine, so that the upper surface of the evaporation end is horizontal and the upper surface of the condensation end is an upward sloping surface from left to right.

[0016] A mounting groove for mounting a silicon wafer substrate is machined at the middle position inside the lower housing using a milling machine. The mounting groove is located between the evaporation end and the condensation end.

[0017] Select a suitable hydrophobic silicon wafer substrate and perform surface treatment on the silicon wafer substrate;

[0018] Multiple trenches arranged in a linear array are formed by laser etching on the surface of the silicon substrate using a femtosecond laser. The depth and width of each trench gradually decrease from the left to the right, forming a wedge structure between each pair of adjacent trenches. The upper surface width of each wedge structure gradually increases from the left to the right, thereby obtaining a microchannel structure with gradient wettability.

[0019] The silicon wafer substrate is installed and fixed in the mounting groove inside the lower housing, so that the silicon wafer substrate is located between the evaporation end and the condensation end, with the left end of the silicon wafer substrate corresponding to the evaporation end and the right end of the silicon wafer substrate corresponding to the condensation end.

[0020] The upper cover and the lower housing are fastened and sealed together to obtain an adaptive thermal diode.

[0021] According to a method for manufacturing an adaptive thermal diode provided by the present invention, the surface treatment of the silicon substrate specifically includes:

[0022] The silicon wafer substrate is placed on an ultraviolet laser to process a rough surface structure, and the rough surface structure is then hydrophilically treated with deionized water for 15 minutes.

[0023] According to a method for manufacturing an adaptive thermal diode provided by the present invention, the silicon wafer substrate is bonded and fixed to the lower housing using a high-temperature resistant adhesive.

[0024] The adaptive thermal diode provided by this invention includes an upper cover and a lower housing that are interlocked, forming a sealed fluid channel cavity between the upper cover and the lower housing. Within the lower housing, from left to right, are an evaporation end, a silicon substrate, and a condensation end. Multiple trenches arranged in a linear array are formed on the silicon substrate. The depth and width of each trench gradually decrease from the evaporation end to the condensation end, so that a wedge-shaped structure is formed between each pair of adjacent trenches. The upper surface width of each wedge-shaped structure gradually widens from the evaporation end to the condensation end. The grooves and wedge-shaped structures work together to form a microchannel structure with gradient wettability. That is, by placing a silicon substrate between the evaporation and condensation ends, the microchannel structure on the silicon substrate exerts a capillary effect on the liquid, enabling the transport of the heat dissipation liquid working fluid. This avoids fluid stagnation and blockage caused by environmental factors, allowing the liquid working fluid to achieve adaptive directional self-flow through the microchannel structure, thereby reducing flow resistance and pressure drop, and improving hydrodynamic heat transport and enhancing the circulation heat dissipation speed. Its rectification effect ensures that heat is transported in an orderly manner as needed. Therefore, the adaptive thermal diode provided by this invention effectively overcomes the effects of lack of gravity drive and fluid stagnation in the horizontal direction, enabling the heat dissipation working fluid to achieve adaptive movement in the horizontal direction to successfully return to the condensation end, allowing the thermal diode to achieve unidirectional high-efficiency heat transfer in different directions.

[0025] Furthermore, the adaptive thermal diode provided by the present invention sets the upper surface of the condensation end as an inclined surface that slopes upward from left to right. Due to the inclined surface and the effect of gravity, there will be no liquid on the inclined surface of the condensation end. Even if there is a small amount of liquid, it will gradually dry out after evaporation, thus preventing liquid evaporation and achieving the reverse cutoff function of the thermal diode. Attached Figure Description

[0026] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the adaptive thermal diode of the present invention;

[0028] Figure 2 This is a schematic diagram of the silicon substrate structure in the adaptive thermal diode of the present invention;

[0029] Figure 3 This is a schematic diagram of the forward heat transfer of the adaptive thermal diode of the present invention;

[0030] Figure 4 This is a schematic diagram of the reverse cutoff of the adaptive thermal diode of the present invention;

[0031] Figure 5 This is a schematic diagram of the laser processing path on a silicon wafer substrate in the manufacturing method of the adaptive thermal diode of the present invention;

[0032] Figure 6 This is a schematic diagram of the cross-sectional parameters during the microchannel structure processing in the manufacturing method of the adaptive thermal diode of the present invention;

[0033] Figure 7 This is a schematic diagram of the longitudinal section parameters during the microchannel structure processing in the manufacturing method of the adaptive thermal diode of the present invention.

[0034] Explanation of reference numerals in the attached figures:

[0035] 1. Upper cover; 11. Insertion groove; 2. Lower shell; 21. Insertion protrusion; 3. Condensation end; 4. Fluid channel cavity; 5. Silicon wafer substrate; 501. Groove; 502. Wedge structure; 6. Evaporation end. Detailed Implementation

[0036] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0038] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. Furthermore, the terms "installed," "connected," and "linked" should be interpreted broadly; for example, they may refer to a fixed connection, a detachable connection, or an integral connection; they may refer to a mechanical connection or an electrical connection; they may refer to a direct connection or an indirect connection through an intermediate medium; and they may refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0039] like Figures 1 to 4 As shown, the adaptive thermal diode of this embodiment includes an upper cover 1 and a lower housing 2 that are interlocked. The upper cover 1 and the lower housing 2 can be enclosed to form a sealed fluid channel cavity 4 for realizing the circulation of heat dissipation liquid.

[0040] The lower housing 2 contains an evaporation end 6, a silicon wafer substrate 5, and a condensation end 3 arranged from left to right. The silicon wafer substrate 5 has multiple trenches 501 arranged in a linear array. The depth of each trench 501 gradually decreases from the evaporation end 6 to the condensation end 3, and the width of each trench 501 also gradually decreases from the evaporation end 6 to the condensation end 3, so that a wedge structure 502 is formed between each two adjacent trenches 501. The width of the upper surface of each wedge structure 502 gradually increases from the evaporation end 6 to the condensation end 3, so that each trench 501 and each wedge structure 502 cooperate with each other to form a microchannel structure with gradient wettability.

[0041] That is, by setting a silicon wafer substrate 5 between the evaporation end 6 and the condensation end 3, the microchannel structure set on the silicon wafer substrate 5 has a capillary effect on the liquid, which can transport the heat dissipation liquid working medium, avoid the fluid stagnation and blockage caused by environmental factors, so that the liquid working medium can achieve adaptive directional self-flow through the microchannel structure, thereby reducing flow resistance and pressure drop, thereby improving hydrodynamic heat transport and strengthening the circulation heat dissipation speed. Its rectification effect enables heat to be transported in an orderly manner as needed.

[0042] Therefore, the adaptive thermal diode of this invention effectively overcomes the effects of lack of gravity drive and fluid stagnation in the horizontal direction, enabling the heat dissipation medium to achieve adaptive movement in the horizontal direction to successfully return to the condensation end, and enabling the thermal diode to achieve unidirectional efficient heat transfer in different directions.

[0043] Specifically, the surface of the microchannel structure is hydrophilic in the part near the evaporation end 6 and hydrophobic in the part near the condensation end 3, thereby facilitating the adaptive directional movement of the heat dissipation working fluid.

[0044] Specifically, the groove 501 adopts a V-shaped groove, which facilitates the transportation of liquid working fluid.

[0045] Specifically, the condenser end 3 is an inclined plate, with its upper surface tilted upwards from left to right, and its left end flush with the right end of the silicon substrate 5. Due to the inclined surface of the plate and the effect of gravity, there will be no liquid on the upper surface of the inclined plate. Even if there is a small amount of liquid, it will gradually dry out after evaporation, thus preventing liquid evaporation and ultimately causing the reverse heat transfer of the thermal diode to fail, achieving the reverse cutoff function of the thermal diode.

[0046] In this design, the upper surface of the evaporation end 6 is horizontal, and the bottom of the groove 501 is higher than the upper surface of the evaporation end 6. That is, the heat transfer medium in the condensation end 3 can achieve adaptive directional self-flow under the action of the microchannel structure and smoothly flow back to the evaporation end 6 to achieve cyclic phase change heat dissipation.

[0047] Specifically, the lower housing 2 has an elliptical groove, in which the evaporation end 6, the silicon wafer substrate 5, and the condensation end 3 are all disposed. A mounting groove for mounting the silicon wafer substrate 5 is provided on the bottom wall of the elliptical groove, and the silicon wafer substrate 5 is bonded and fixed to the mounting groove.

[0048] Furthermore, the upper end of the lower housing 2 is provided with a ring of insertion protrusions 21, and the lower end of the upper cover 1 is provided with an insertion groove 11 that matches the insertion protrusions 21, so as to realize the insertion and fastening of the lower housing 2 and the upper cover 1.

[0049] The working principle of the adaptive thermal diode in this embodiment of the invention is as follows:

[0050] like Figure 3 As shown, when the adaptive thermal diode operates in the forward direction, the capillary force of the microchannel structure can absorb the liquid flowing back from the condenser end 3 into the microchannel structure. Under a certain pressure, the microchannel structure opens rapidly to form a passage. The liquid working fluid has low flow resistance in the direction of free flow and flows easily. During the flow, the liquid working fluid absorbs the heat generated by the evaporation end 6 of the thermal diode, thereby rapidly carrying away the heat and reducing the temperature of the evaporation end 6. After absorbing heat, the liquid working fluid forms hot vapor, which then condenses at the condenser end 3, thus repeating the heat transfer and heat dissipation cycle to achieve efficient forward heat transfer and heat dissipation.

[0051] like Figure 4 As shown, when the adaptive thermal diode operates in reverse, that is, when the temperature of the condenser end 3 is higher than that of the evaporator end 6, the roles of the evaporator end 6 and the condenser end 3 are reversed for the thermal diode. Since the condenser end 3 is an inclined surface, most of the liquid working fluid will flow into the microchannel structure along the inclined surface. Due to the Laplace force and wetting gradient effect of the microchannel structure on the liquid working fluid in the condenser end 3, the liquid in the condenser end 3 will adaptively flow towards the evaporator end 6. However, since the resistance encountered by the liquid flowing from the evaporator end 6 to the condenser end 3 is relatively large, the liquid will accumulate at the evaporator end 6 and cannot flow back to the condenser end 3. When the thermal diode reaches a steady state, the liquid in the condenser end 3 gradually decreases and eventually becomes dry, thereby causing the internal phase change cycle of the thermal diode to fail, thus blocking the heat return and cutting off the reverse heat transfer of the thermal diode.

[0052] This invention also provides a method for manufacturing an adaptive thermal diode, wherein the adaptive thermal diode is the same as that described above, and the manufacturing method includes the following steps:

[0053] The upper cover and lower shell are machined separately by a milling machine so that they can form a closed fluid channel cavity after being fitted together.

[0054] The evaporation end and the condensation end are machined at the left and right ends of the lower housing by a milling machine, so that the upper surface of the evaporation end is horizontal and the upper surface of the condensation end is inclined upward from left to right.

[0055] A mounting groove for mounting the silicon wafer substrate is machined in the middle of the lower housing using a milling machine. This mounting groove is located between the evaporation end and the condensation end.

[0056] Select a suitable hydrophobic silicon substrate and perform surface treatment on the silicon substrate.

[0057] By using a femtosecond laser to etch multiple linearly arrayed trenches on the surface of a silicon substrate, the depth and width of each trench gradually decrease from the left to the right, forming a wedge-shaped structure between each pair of adjacent trenches. The upper surface width of each wedge-shaped structure gradually widens from the left to the right, thereby obtaining a microchannel structure with gradient wettability.

[0058] The silicon wafer substrate is installed and fixed in the mounting slot inside the lower housing, so that the silicon wafer substrate is located between the evaporation end and the condensation end, with the left end of the silicon wafer substrate corresponding to the evaporation end and the right end of the silicon wafer substrate corresponding to the condensation end.

[0059] The upper cover and lower housing are fastened and sealed together to obtain an adaptive thermal diode.

[0060] Furthermore, when performing laser etching on a silicon wafer substrate, the size of the wedge structure on the silicon wafer substrate is determined by the required wetting conditions, thereby determining the parameters of the laser beam.

[0061] Furthermore, surface treatment of the silicon wafer substrate specifically includes:

[0062] The silicon wafer substrate is placed on an ultraviolet laser to create a rough surface structure, and then cleaned with an ultrasonic cleaner. The rough surface structure is then treated with deionized water for 15 minutes.

[0063] In this process, a 300-400 nm ultraviolet laser is used to induce micro-nano structures on the surface. The micro-nano pores are pre-designed to be 20-100 nm, the repetition frequency is set to 20-100 kHz, the pulse width is set to 10-20 ns, the laser scanning range is set to 20×9×1 mm, and the scan is performed 1-2 times. This process creates a rough surface structure on the silicon wafer substrate, and the roughness Ra of the processed hydrophilic rough surface is 1.55 μm.

[0064] Since the silicon substrate is hydrophobic, and the rough surface after laser processing becomes hydrophilic after being treated with deionized water, the liquid on the surface of the silicon substrate is subjected to the hydrophobic repulsive force of the microchannel structure, which is conducive to the flow and transport of liquid working fluid on the chip surface.

[0065] Furthermore, the silicon wafer substrate is bonded and fixed to the lower housing using high-temperature resistant adhesive.

[0066] Furthermore, laser etching on the surface of a silicon substrate using a femtosecond laser specifically includes:

[0067] A silicon wafer substrate is clamped onto a laser processing platform, ensuring the surface of the substrate is level. The laser source position is controlled to etch along a predetermined processing path, thereby creating a macro-micro wedge-shaped gradient structure surface with alternating longitudinal wedge and trench structures. This results in a microchannel structure with gradient wettability. Figure 5 The arrows in the diagram indicate the laser processing path. This microchannel structure exhibits hydrophobicity on surfaces with large wedge gradients and hydrophilicity on surfaces with small wedge gradients.

[0068] Because the silicon substrate is hydrophobic, the gradient wedge structure of the microchannel allows for gradient wettability of the liquid. This results in better capillary action within the microchannel structure, facilitating the transport of the working fluid and eliminating the need for additional driving forces to propel its flow in microfluidics. The varying wettability of the working fluid on the surfaces of the microchannel structure reduces flow resistance and pressure drop during directional self-flow, thereby enhancing hydrodynamic and thermal transport and flow velocity. Its rectifying effect enables adaptive directional transport of the working fluid.

[0069] It should be noted that when using a femtosecond laser to process a silicon substrate to form a microchannel structure, the size of the wedge gradient required for processing the silicon substrate is determined according to the desired wetting conditions. Specifically, this can be achieved by controlling the laser source, thereby controlling the laser scanning time, and by gradually increasing the laser scanning speed and processing power.

[0070] like Figure 6 and Figure 7 As shown, the laser processing parameters are as follows:

[0071] A laser pulse with a center wavelength λ = 615 nm, a pulse width τ = 169 fs, a single pulse energy of 1 mJ, and a repetition frequency of 1 kHz was used. The laser processing of the grooves employed a line-by-line scanning method. During laser irradiation, the sample moved along a predetermined processing path, with a scan interval d of 700 μm between adjacent rows. The microchannel structure was pre-designed as a variable-depth microchannel array structure with a groove depth h of 10–100 μm and a wedge gradient β of 2–10°. The laser processing depth was adjusted according to the preset groove depth and wedge gradient, with corresponding scanning speeds.

[0072] In this embodiment, the oblique angle β of the processing path is set to 10°, the maximum processing depth h is 100µm, and the processing speed is controlled within the range of 3mm / s to 8mm / s to obtain a gradient wedge-shaped surface for each processed trench. The above steps are repeated, and the spacing between each trench is controlled to approximately 700µm for repeated processing. Finally, a microchannel structure with alternating trenches and wedge-shaped structures is fabricated on the silicon wafer substrate.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An adaptive thermal diode, characterized in that, The device includes an interlocking upper cover and a lower shell, which together form a sealed fluid channel cavity. Within the lower shell, from left to right, are an evaporation end, a silicon wafer substrate, and a condensation end. The silicon wafer substrate has multiple trenches arranged in a linear array. The depth and width of each trench gradually decrease from the evaporation end to the condensation end, creating a wedge-shaped structure between adjacent trenches. The upper surface width of each wedge-shaped structure gradually increases from the evaporation end to the condensation end. The trenches and wedge-shaped structures cooperate to form a microchannel structure with gradient wettability. The surface of the microchannel structure is hydrophilic near the evaporation end and hydrophobic near the condensation end. The condensing end is an inclined plate, the upper surface of which is inclined upward from left to right, and the left end of the condensing end is flush with the right end of the silicon wafer substrate; the inclined condensing end makes it difficult for the condensed liquid to stay on the surface of the condensing end under the action of gravity, preventing the liquid from evaporating at the condensing end and achieving reverse cutoff. The upper surface of the evaporation end is a horizontal plane, and the bottom of the groove is higher than the upper surface of the evaporation end. The lower housing has an elliptical groove, and the evaporation end, the silicon wafer substrate, and the condensation end are all disposed within the elliptical groove; An mounting groove for mounting the silicon wafer substrate is provided on the bottom wall of the elliptical groove, and the silicon wafer substrate is bonded and fixed to the mounting groove.

2. The adaptive thermal diode according to claim 1, characterized in that, The upper port of the lower housing is provided with a ring of insertion protrusions, and the upper cover is provided with insertion grooves that are adapted to the insertion protrusions. The lower housing and the upper cover are inserted and fastened together.

3. A method for manufacturing an adaptive thermal diode as described in claim 1 or 2, characterized in that, Includes the following steps: The upper cover and lower shell are machined separately by a milling machine so that the upper cover and lower shell can form a closed fluid channel cavity after being fitted together. An evaporation end and a condensation end are respectively machined at the left and right ends of the lower housing using a milling machine, so that the upper surface of the evaporation end is horizontal and the upper surface of the condensation end is an upward sloping surface from left to right. A mounting groove for mounting a silicon wafer substrate is machined at the middle position inside the lower housing using a milling machine. The mounting groove is located between the evaporation end and the condensation end. Select a suitable hydrophobic silicon wafer substrate and perform surface treatment on the silicon wafer substrate; Multiple trenches arranged in a linear array are formed by laser etching on the surface of the silicon substrate using a femtosecond laser. The depth and width of each trench gradually decrease from the left to the right, forming a wedge structure between each pair of adjacent trenches. The upper surface width of each wedge structure gradually increases from the left to the right, thereby obtaining a microchannel structure with gradient wettability. The silicon wafer substrate is installed and fixed in the mounting groove inside the lower housing, so that the silicon wafer substrate is located between the evaporation end and the condensation end, with the left end of the silicon wafer substrate corresponding to the evaporation end and the right end of the silicon wafer substrate corresponding to the condensation end. The upper cover and the lower housing are fastened and sealed together to obtain an adaptive thermal diode. The surface treatment of the silicon wafer substrate specifically includes: The silicon wafer substrate is placed on an ultraviolet laser to process a rough surface structure, and the rough surface structure is then hydrophilically treated with deionized water for 15 minutes.

4. The method for manufacturing an adaptive thermal diode according to claim 3, characterized in that, The silicon wafer substrate is bonded and fixed to the lower housing using high-temperature resistant adhesive.

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