A method of impurity removal and apparatus therefor

Abstract

The application relates to a method and a device for removing impurities. The method comprises the following steps: vacuum pre-extraction is performed on a sealed cavity based on state information; in the case that the sealed cavity reaches a target vacuum state, a voltage for electrifying a to-be-processed filament is increased to a target voltage intensity according to voltage information; first current intensity and second current intensity, first change rate and second change rate in current information are obtained, the current for electrifying the to-be-processed filament is increased to the first current intensity according to the first change rate, the to-be-processed filament is preheated, in the case that the to-be-processed filament is preheated, the current is increased from the first current intensity to the second current intensity based on the second change rate, and a target filament is obtained. By using the method, impurities on the filament in an electron ionization source can be removed by accurate control of voltage and current intensity in the case that the vacuum state meets corresponding conditions, and the precision of mass spectrum analysis is improved.

Description

Technical Field

[0001] This application relates to the field of intelligent instrument technology, and in particular to a method and apparatus for removing impurities. Background Technology

[0002] When performing mass spectrometry analysis using a mass spectrometer, an EI (electron impact) source is typically used to ionize the sample; the most important component of the EI source is the filament.

[0003] However, the filament in the electron ionization source is easily contaminated with impurities during processing, transportation, or storage, which affects the accuracy of mass spectrometry analysis. Summary of the Invention

[0004] Therefore, it is necessary to provide a method and apparatus for removing impurities from the filament of an electron ionization source, which addresses the aforementioned technical problems.

[0005] Firstly, this application provides a method for removing impurities. The method is applied to an impurity removal device configured with a sealed cavity, and includes:

[0006] Acquire status information, voltage information, and current information; the voltage information includes the target voltage intensity, which is selected based on the number of filaments to be processed; the current information includes a first current intensity, a second current intensity, a first rate of change, and a second rate of change; wherein, the second current intensity is greater than the first current intensity;

[0007] Based on the status information, the sealed cavity is pre-evacuated to achieve the target vacuum state; the voltage applied to the filament to be treated is increased to the target voltage intensity.

[0008] The current applied to the filament to be treated is increased to a first current intensity according to the first rate of change, so as to preheat the filament to be treated.

[0009] The target filament is obtained by increasing the current from the first current intensity to the second current intensity based on the second rate of change.

[0010] In one embodiment, the first rate of change is less than the second rate of change, and the current information further includes a third rate of change, a first duration for maintaining the first current intensity, and a second duration for maintaining the second current intensity; the method further includes:

[0011] When the current reaches the first current intensity, the filament to be treated is energized according to the first holding time;

[0012] When the current reaches the second current intensity, the filament to be treated is energized based on the second holding time;

[0013] Once the target filament is obtained, the current is reduced from the second current intensity to zero according to the third rate of change.

[0014] In one embodiment, the first current intensity is selected based on the filament type and the size and thickness of the filament to be processed; the second current intensity is selected based on the filament type and the size and thickness of the filament to be processed.

[0015] The first current intensity is used to preheat the filament to be treated, and the second current intensity is used to remove impurities from the filament to be treated.

[0016] Secondly, this application also provides a purification device. The device includes:

[0017] The vacuum assembly includes a vacuum pump and a sealed cavity, and a clamp is disposed in the sealed cavity; the vacuum pump is used to pre-evacuate the sealed cavity, and the clamp is used to fix the filament to be treated.

[0018] The power unit, the power unit connecting fixture, the power unit is used to output the energizing voltage and energizing current to process the filament to be processed;

[0019] The main control unit is connected to both the vacuum assembly and the power unit.

[0020] In one embodiment, the impurity removal device further includes:

[0021] The user interaction device is connected to the main control unit. The user interaction device is used to respond to operation commands and output corresponding status information, voltage information and current information to the main control unit.

[0022] In one embodiment, the main control unit includes:

[0023] The main controller is connected to the user interaction device. The main controller outputs level signals based on voltage and current information, and outputs status control commands based on status information.

[0024] The power control circuit is connected to the main controller and the power unit respectively. The main controller transmits the level signal to the power unit through the power control circuit.

[0025] The vacuum pump control circuit is connected to both the main controller and the vacuum pump. The main controller transmits status control commands to the vacuum pump through the vacuum pump control circuit.

[0026] In one embodiment, the vacuum pump control circuit transmits commands to the vacuum pump based on the 485 communication protocol.

[0027] In one embodiment, the power unit includes:

[0028] A constant current source control circuit is connected to the power control circuit and the fixture. The constant current source control circuit receives the level signal and outputs the corresponding energizing voltage and energizing current to the fixture based on the level signal.

[0029] A transformer is used to connect to the mains power supply and to connect to a constant current source control circuit to supply power to the constant current source control circuit.

[0030] In one embodiment, the vacuum pump includes a backing pump and a molecular pump, both of which are connected to a vacuum pump control circuit.

[0031] The sealed cavity includes two ports. One port of the sealed cavity is equipped with a clamp, and the other port is connected to the evacuation port of the molecular pump. The evacuation port of the backing pump is connected to the backing pump interface of the molecular pump through a pipe.

[0032] In one embodiment, the main control unit further includes an AC-DC conversion unit;

[0033] The AC-DC conversion unit is used to connect to the mains power. The AC-DC conversion unit is connected to the main controller, the power control circuit and the vacuum pump control circuit respectively to supply power to the main controller, the power control circuit and the vacuum pump control circuit.

[0034] The aforementioned impurity removal method and apparatus pre-evacuate a sealed cavity based on state information. Once the sealed cavity reaches the target vacuum state, the voltage applied to the filament to be treated is increased to the target voltage intensity based on voltage information. By acquiring the first current intensity, second current intensity, first rate of change, and second rate of change in current information, the current applied to the filament to be treated is increased to the first current intensity based on the first rate of change to preheat the filament. After the filament is preheated, the current applied is increased from the first current intensity to the second current intensity based on the second rate of change to obtain the target filament. Under the condition that the vacuum state meets the corresponding requirements, the precise control of voltage and current intensity removes impurities from the filament in the electron ionization source, improving the accuracy of mass spectrometry analysis. Attached Figure Description

[0035] Figure 1 This is a structural block diagram of the impurity removal device in one embodiment;

[0036] Figure 2 This is a flowchart illustrating a method for removing impurities in one embodiment;

[0037] Figure 3 This is a structural block diagram of the impurity removal device in another embodiment;

[0038] Figure 4This is a structural block diagram of the main control unit in one embodiment;

[0039] Figure 5 This is a structural block diagram of an electrical energy unit in one embodiment;

[0040] Figure 6 This is a schematic diagram of the electrical relationships of the impurity removal device in one embodiment. Detailed Implementation

[0041] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0043] It is understood that, and should be noted, the terms “first” and “second” in this application are used to distinguish different objects, rather than to describe a specific order.

[0044] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0045] The filament in an electron ionization source is typically made of an alloy metal, 1 mm wide and 0.1 mm thick, cut into sections approximately 12 mm long, and fixed with a special clamp. By applying a certain intensity of electrical energy to both ends of the filament, it achieves the effect of luminescence and heating. During this process, the filament excites electrons containing a certain amount of energy. However, impurities may be present in the filament. These impurities may be inherent in the alloy metal itself or acquired during processing, transportation, or storage. If these impurities are not removed from the filament, the ultimately excited electrons will be impure, affecting the accuracy of mass spectrometry analysis.

[0046] Currently, removing impurities from lamp filaments requires designing and manufacturing instruments and corresponding control methods based on factors such as the metallic properties of the alloy metal, the electrical energy parameters that the filament can withstand at different thicknesses and dimensions, and whether the vacuum level of the vacuum environment is sufficient, in order to obtain a finished product that meets the requirements. However, the market lacks corresponding instruments and equipment to meet this impurity removal need. Whether it's the vacuum environment, the impurity removal technology, or the corresponding intelligent equipment, there is an urgent need to develop a set of intelligent equipment and matching technologies for impurity removal operations.

[0047] The impurity removal method provided in this application embodiment can be applied to, for example, Figure 1 The impurity removal device shown may include a main control unit 102 and a vacuum assembly 104. The main control unit 102 is connected to and communicates with the vacuum assembly 104, which has a sealed cavity. The main control unit 102 can control the vacuum assembly 104 to pre-evacuate the sealed cavity. When the sealed cavity reaches the target vacuum state, the main control unit 102 can energize the filament to be processed based on voltage and current information to obtain the target filament. This embodiment of the application satisfies both high voltage and current control accuracy and the voltage and current requirements of various filaments, removing impurities from the filament while improving the accuracy of mass spectrometry analysis.

[0048] In one embodiment, such as Figure 2 As shown, a method for removing impurities is provided, which is applied to... Figure 1 Taking a purification device with a sealed cavity as an example, the following steps are included:

[0049] S202, acquire status information, voltage information and current information; voltage information includes target voltage intensity, which is selected based on the number of filaments to be processed; current information includes first current intensity, second current intensity, first rate of change and second rate of change; wherein, the second current intensity is greater than the first current intensity.

[0050] Among them, status information can refer to information used to describe the vacuum state inside the sealed cavity, such as the air pressure value inside the sealed cavity;

[0051] Among them, voltage information can refer to information used to describe various voltage parameters, such as voltage intensity and voltage change rate. The voltage intensity can be set according to the number of filaments to be processed.

[0052] Among them, current information can refer to information used to describe various parameters of the current, such as the current intensity and the rate of change of the current. The current intensity and the rate of change of the current can be set according to the actual situation.

[0053] Specifically, the main control unit acquires the state information, the target voltage intensity from the voltage information, and the first current intensity, the second current intensity, the first rate of change, and the second rate of change from the current information.

[0054] In one embodiment, the first current intensity is selected based on the filament type and the size and thickness of the filament to be processed; the second current intensity is selected based on the filament type and the size and thickness of the filament to be processed.

[0055] The first current intensity is used to preheat the filament to be treated, and the second current intensity is used to remove impurities from the filament to be treated.

[0056] The filament to be processed may refer to a filament made of alloy metal, and the specific size is not limited in the embodiments of this application.

[0057] Specifically, due to the different alloy filaments (filaments to be treated), their material properties and dimensions and thicknesses differ, requiring the setting of corresponding first and second current intensities; in some examples, when the alloy material used for the filament to be treated is rhenium, the first current intensity can be 4.5A and the second current intensity can be 5.5A.

[0058] In this embodiment, the first current intensity and the second current intensity are selected according to the filament type and the size and thickness of the filament to be processed, thereby improving the efficiency and accuracy of impurity removal.

[0059] S204, based on the status information, perform vacuum pre-evacuation of the sealed cavity to achieve the target vacuum state; increase the energizing voltage of the filament to be treated to the target voltage intensity.

[0060] The target vacuum pressure (vacuum degree) can be set according to actual conditions. In this embodiment, the target vacuum is defined as a pressure value less than 1 × 10⁻⁶. -5 Let's take Pa as an example to illustrate.

[0061] The target voltage intensity can be set according to the actual situation, and is not limited in this embodiment.

[0062] Specifically, the main control unit performs vacuum pre-evacuation of the sealed cavity based on status information, ensuring that the gas pressure inside the sealed cavity does not exceed 1×10⁻⁶. -5 Pa, reaching the target vacuum state; when the air pressure in the sealed cavity reaches the target vacuum state, the main control unit will increase the energizing voltage of the processing filament from zero to the target voltage intensity.

[0063] S206, the current energized to the filament to be treated is increased to a first current intensity according to the first rate of change, so as to preheat the filament to be treated.

[0064] Specifically, the main control unit increases the current applied to the filament to be processed from zero to a first current intensity according to a first rate of change, so as to preheat the filament to be processed; in some examples, when the filament to be processed is preheated, some impurities with lower melting points on the filament to be processed are burned into smoke or ash, which plays a preliminary role in removing impurities.

[0065] S208, based on the second rate of change, the current is increased from the first current intensity to the second current intensity to obtain the target filament.

[0066] Specifically, the target filament can refer to the filament that has completed the removal of impurities; the main control unit increases the current from the first current intensity to the second current intensity based on the second rate of change to obtain the target filament.

[0067] In one embodiment, the first rate of change is less than the second rate of change, and the current information further includes a third rate of change, a first duration for maintaining the first current intensity, and a second duration for maintaining the second current intensity; the method further includes:

[0068] When the current reaches the first current intensity, the filament to be treated is energized according to the first holding time;

[0069] When the current reaches the second current intensity, the filament to be treated is energized based on the second holding time;

[0070] Once the target filament is obtained, the current is reduced from the second current intensity to zero according to the third rate of change.

[0071] The selection of the first and second rates of change is related to the resistance of the material used in the filament to be treated (usually in the range of tens to hundreds of mΩ). The filament to be treated with a higher resistance has a lower rate of change, while the filament to be treated with a lower resistance has a higher rate of change. This is to prevent the total power conducted on the filament to be treated from suddenly becoming too large and causing the filament to burn out.

[0072] Specifically, when the energizing current reaches the first current intensity, the main control unit energizes the filament to be processed according to the first holding time. At this time, the filament to be processed gradually emits light and heat in the vacuum environment, and most of the impurities on the filament to be processed are burned into smoke or ash, completing the preheating. Then, the main control unit increases the energizing current from the first current intensity to the second current intensity based on the second rate of change, and energizes the filament to be processed according to the second holding time. At this time, the filament to be processed, which has completed preheating, emits stronger light and heat in the vacuum environment, exciting a large number of energetic electrons. These electrons carry the remaining impurities and ash away from the filament to be processed, which has completed preheating, to obtain the target filament. After obtaining the target filament, the main control unit reduces the energizing current from the second current intensity to zero according to the third rate of change.

[0073] It should be noted that when the main control unit increases the energizing voltage of the filament to be processed to the target voltage level, the main control unit will only increase the energizing current of the filament to be processed from zero after a preset waiting time. The preset waiting time is set according to the actual situation and can be zero. Furthermore, after the energizing voltage is increased to the target voltage level, the energizing voltage is maintained at the target voltage level until the impurity removal is completed.

[0074] In some examples, a constant voltage and constant current source can be used in the embodiments of this application, so that the energizing voltage can rise rapidly without setting the voltage change rate. When the energizing current is zero, the power on the filament to be processed is zero. In addition, numerically, the third change rate is greater than the first change rate and the second change rate, and the second change rate is greater than the first change rate.

[0075] In this embodiment, the third rate of change, the first duration, and the second duration in the current information meet the needs and requirements of the impurity removal process, achieve precise control of the current intensity, and improve the impurity removal efficiency and the accuracy of mass spectrometry analysis.

[0076] In the above-mentioned impurity removal method, the sealed cavity is pre-evacuated based on state information. When the sealed cavity reaches the target vacuum state, the voltage applied to the filament to be treated is increased to the target voltage intensity based on voltage information. By acquiring the first current intensity, second current intensity, first rate of change, and second rate of change in current information, the current applied to the filament to be treated is increased to the first current intensity based on the first rate of change to preheat the filament. After the filament to be treated is preheated, the current applied is increased from the first current intensity to the second current intensity based on the second rate of change to obtain the target filament. The appropriate current information is selected based on the filament type, size, and thickness of the filament to be treated, and the appropriate voltage information is selected based on the number of filaments to be treated. This achieves precise control of voltage and current intensity, meets the needs and requirements of filament impurity removal, and improves the accuracy of mass spectrometry analysis.

[0077] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0078] Based on the same inventive concept, this application also provides a purification apparatus for implementing the purification method described above. The solution provided by this apparatus is similar to the solution described in the above method; therefore, the specific limitations in one or more purification apparatus embodiments provided below can be found in the limitations of the purification method described above, and will not be repeated here.

[0079] In one embodiment, such as Figure 3 As shown, a purification device is provided, which includes:

[0080] Vacuum assembly 310 includes a vacuum pump and a sealing cavity, and a clamp is disposed in the sealing cavity; the vacuum pump is used to pre-evacuate the sealing cavity, and the clamp is used to fix the filament to be treated.

[0081] The power unit 320 is connected to the clamp and is used to output the energizing voltage and current to treat the filament to be treated.

[0082] The main control unit 330 is connected to the vacuum assembly 310 and the power unit 320 respectively.

[0083] Specifically, there is bidirectional transmission of electrical signals between the main control unit 330 and the vacuum component 310, and there is bidirectional transmission of electrical energy and electrical signals between the main control unit 330 and the power unit 320. The power unit 320 provides the vacuum component 310 with voltage and current within a given range and accuracy.

[0084] In this embodiment, the vacuum assembly uses a suitable vacuum pump and a sealed cavity to meet the requirements of the vacuum environment for impurity removal. The power unit meets the voltage and current requirements for impurity removal through precise control of voltage and current. The main control unit completes the impurity removal work of the filament to be treated by connecting the vacuum assembly and the power unit respectively.

[0085] In one embodiment, the impurity removal device further includes:

[0086] The user interaction device is connected to the main control unit. The user interaction device is used to respond to operation commands and output corresponding status information, voltage information and current information to the main control unit.

[0087] The user interaction device can refer to a device used for human-computer interaction with business personnel, such as a touch screen; in this embodiment, a touch screen is used as an example for illustration.

[0088] Furthermore, the operation commands responded to by the user interaction device may include parameters such as: the air pressure value of the target vacuum state, the target voltage intensity, the current intensity of each stage (first current intensity, second current intensity), the current rise / fall rate of each stage (first rate of change, second rate of change, third rate of change), and the duration of each stage (first holding time, second holding time), which are not limited in the embodiments of this application.

[0089] Specifically, the main control unit may include a touchscreen communication circuit connected to the touchscreen (user interaction device). The touchscreen communication circuit assists the main control unit in controlling the display content of the touchscreen and transmitting the touchscreen's operation actions to the main control unit. In addition, the user interaction device can also display various operating parameters, such as: the voltage, current, speed, and temperature of the vacuum pump, the air pressure (vacuum degree) in the sealed cavity, and the current output voltage and current values ​​of the power unit.

[0090] In this embodiment, the impurity removal device is used in conjunction with a user interaction device, which is convenient to operate, allows for easy setting of required parameters and switching of corresponding functional devices, and intuitively displays the values ​​of various parameter indicators, thereby improving impurity removal efficiency.

[0091] In one embodiment, such as Figure 4 As shown, the main control unit includes:

[0092] The main controller 410 is connected to the user interaction device. The main controller 410 outputs level signals based on voltage and current information, and outputs status control commands based on status information.

[0093] The power control circuit 420 is connected to the main controller 410 and the power unit respectively. The main controller 410 transmits the level signal to the power unit through the power control circuit 420.

[0094] The vacuum pump control circuit 430 is connected to the main controller 410 and the vacuum pump. The main controller 410 transmits status control commands to the vacuum pump through the vacuum pump control circuit 430.

[0095] The main controller may include a circuit based on a microcontroller, used to send and parse communication data, send and receive level signals, and execute pre-set working logic.

[0096] Specifically, the main control unit may also include a circuit (voltage and current detection circuit) with a 16-bit ADC (analog-to-digital converter) detection chip as its core. The voltage and current detection circuit can convert the voltage and current values ​​output by the power unit into corresponding level signals and output the level signals to the main controller. In addition, the power control circuit can also transmit the level signals output by the main controller to the power unit.

[0097] Furthermore, the vacuum pump control circuit is used to transmit the status control commands output by the main controller to the vacuum pump.

[0098] In some examples, the cleaning device may also include a computer; the main control unit may also include a debugging circuit, which is connected to the main controller and the computer respectively, for enabling communication between the computer and the main controller, and for updating the firmware stored inside the microcontroller in the main controller.

[0099] In this embodiment, the main control unit enables the impurity removal device to perform intelligent impurity removal operations by setting up a main controller, an electrical power control circuit, and a vacuum pump control circuit.

[0100] In one embodiment, the vacuum pump control circuit transmits commands to the vacuum pump based on the 485 communication protocol.

[0101] Specifically, the vacuum pump control circuit may include a circuit based on 485 communication, used to transmit the status control commands output by the main controller to the vacuum pump based on the 485 communication protocol.

[0102] In this embodiment, the RS485 communication method, which has a high transmission rate and strong anti-interference capability, is selected to improve the noise removal accuracy.

[0103] In one embodiment, such as Figure 5 As shown, the power unit includes:

[0104] The constant current source control circuit 510 is connected to the power control circuit and the fixture respectively. The constant current source control circuit 510 receives the level signal and outputs the corresponding energizing voltage and energizing current to the fixture based on the level signal.

[0105] Transformer 520 is used to connect to the mains power supply and is connected to the constant current source control circuit 510 to supply power to the constant current source control circuit 510.

[0106] Specifically, such as Figure 5 As shown, the constant current source control circuit 510 receives the level signal transmitted by the power control circuit and outputs the corresponding energizing voltage and current to the clamp according to the level signal. The transformer 520 is connected to 220V AC power (mains power) and converts the 220V AC power into AC voltage values ​​that meet the requirements of the constant current source control circuit 510.

[0107] In practical applications, the power unit can also include a voltage detection circuit, a current detection circuit, a voltage output circuit, a current output circuit, a voltage control circuit, and a current control circuit. The voltage control circuit receives the 0V-3.3V DC level signal output from the main controller and converts it into a voltage control level signal for the constant current source control circuit. The current control circuit receives the 0V-3.3V DC level signal output from the main controller and converts it into a current control level signal for the constant current source control circuit. The voltage output circuit connects the voltage output of the constant current source control circuit to both ends of the filament to be processed (the clamp); the current output circuit connects the current output of the constant current source control circuit to both ends of the filament to be processed. The voltage detection circuit converts the voltage value range output by the voltage output circuit into the voltage value recognition range of the voltage and current detection modules; the current detection circuit converts the current signal output by the current output circuit into a voltage signal through a sampling resistor, and the converted voltage signal is within the voltage value recognition range of the voltage and current detection modules.

[0108] In addition, the constant current source control circuit can adjust the voltage output (current voltage) with an accuracy of 0.1V within the voltage range of 0V-80V, and the constant current source control circuit can also adjust the current output (current current) with an accuracy of 0.1A within the current range of 0A-6A.

[0109] In this embodiment, the power unit can precisely control the output values ​​of current and voltage to meet the current and voltage requirements for impurity removal.

[0110] In one embodiment, the vacuum pump includes a backing pump and a molecular pump, both of which are connected to a vacuum pump control circuit.

[0111] The sealed cavity includes two ports. One port of the sealed cavity is equipped with a clamp, and the other port is connected to the evacuation port of the molecular pump. The evacuation port of the backing pump is connected to the backing pump interface of the molecular pump through a pipe.

[0112] Among them, the backing pump can be a vacuum pump used to maintain the pressure of the front stage of a vacuum pump below its critical backing pressure; the molecular pump can be a vacuum pump that uses a high-speed rotating rotor to transfer momentum to gas molecules, so that they can obtain directional velocity, and thus be compressed and driven to the exhaust port and pumped away by the backing pump.

[0113] Specifically, the vacuum pump control circuit may include a backing pump communication circuit and a molecular pump communication circuit. The backing pump communication circuit is connected to the main controller and the backing pump respectively, and transmits commands to the backing pump based on the 485 communication protocol. The molecular pump communication circuit is connected to the main controller and the molecular pump respectively, and transmits commands to the molecular pump based on the 485 communication protocol.

[0114] The fixture is used to support and fix the alloy filament (the filament to be treated). One end of the fixture is connected to the voltage and current signal lines output by the constant current source circuit, thus electrically connecting the alloy filament to the constant current source circuit. The contact point between the fixture and the sealing cavity is not electrically connected to the alloy filament; in other words, the sealing cavity and the alloy filament are not electrically connected. This prevents short circuits and leakage caused by unnecessary electrical connections, and also avoids the heat generated during impurity removal (heat radiation generated when removing impurities from the alloy filament) affecting the sealing cavity.

[0115] Furthermore, the shape of the sealed cavity can be set according to actual conditions. In this embodiment, a cylindrical sealed cavity is used as an example. The pump port of the backing pump is connected to the backing pump interface of the molecular pump through a pipe, which is used to pump the gas pressure inside the sealed cavity from a state equal to the external environment to a state below 50 Pa. It should be noted that, under the condition of meeting the inlet pressure of the backing pump, the higher pumping rate and greater compression ratio of the backing pump enable the vacuum equipment to meet the gas pressure requirements in a shorter time. The molecular pump is connected to one end interface of the sealed cavity, which is used to pump the gas pressure inside the sealed cavity from below 50 Pa to no more than 1 × 10⁻⁶ Pa. -5 Pa.

[0116] In practical applications, the vacuum assembly also includes a vacuum gauge, a vent valve, and a cooling fan. The vacuum gauge serves as a sensor for measuring the vacuum level; it is installed on a pre-existing interface within the sealed cavity to measure the vacuum level inside. The vent valve is installed on the vent valve interface of the molecular pump, used for introducing external gas or for breaking the vacuum in the sealed cavity. The cooling fan is installed outside the sealed cavity to blow air and dissipate heat. The sealed cavity is primarily cylindrical, with one end serving as the molecular pump interface and the other end used to insert and lock the clamp for closure; a vacuum gauge interface is located on the side.

[0117] In the embodiments of this application, a suitable sealed cavity and vacuum pump are selected to meet the requirements of the vacuum environment for impurity removal.

[0118] In one embodiment, the main control unit further includes an AC-DC conversion unit;

[0119] The AC-DC conversion unit is used to connect to the mains power. The AC-DC conversion unit is connected to the main controller, the power control circuit and the vacuum pump control circuit respectively to supply power to the main controller, the power control circuit and the vacuum pump control circuit.

[0120] Specifically, AC mains power can refer to 220V alternating current. The AC-DC conversion unit can convert 220V alternating current into DC voltage required by the internal components of the main control unit.

[0121] In this embodiment, an AC-DC conversion unit is used to convert the mains power to meet the power requirements of the various devices inside the main control unit.

[0122] To facilitate understanding by those skilled in the art, the impurity removal device is described below with reference to a specific example: Figure 6 As shown, Figure 6 The diagram illustrates the electrical relationships of the impurity removal device. The AC-DC conversion unit receives mains power via the mains access circuit to power the components within the main control unit. The main controller is connected to the debugging circuit, touchscreen communication circuit, molecular pump communication circuit, pre-pump communication circuit, vacuum gauge communication circuit, vent valve control circuit, fan control circuit, power control circuit, and voltage / current detection circuit. The debugging circuit connects to the computer, and the touchscreen communication circuit connects to the touchscreen. The molecular pump communication circuit connects to the molecular pump, the pre-pump communication circuit connects to the pre-pump, the vacuum gauge communication circuit connects to the vacuum gauge, the vent valve control circuit connects to the vent valve, and the fan control circuit connects to the cooling fan. The power control circuit connects to the voltage control circuit and the current control circuit, and the voltage / current detection circuit connects to the voltage detection circuit and the current detection circuit, respectively.

[0123] The transformer receives mains power, and the constant current source control circuit is connected to the transformer, voltage detection circuit, current detection circuit, voltage output circuit, current output circuit, voltage control circuit, and current control circuit respectively; the voltage output circuit and current output circuit are connected to the clamps respectively.

[0124] The vent of the back pump is connected to the back pump interface of the molecular pump through a pipe. The molecular pump is connected to one end of the sealed cavity interface. The vacuum gauge is connected to the reserved interface of the sealed cavity. The vent valve is connected to the vent valve interface of the molecular pump. The cooling fan is connected to the outside of the sealed cavity and blows air into the sealed cavity to dissipate heat. The sealed cavity is mainly cylindrical, with the molecular pump interface at one end and the other end used to insert and lock the clamp to close it. The vacuum gauge interface is left on the side.

[0125] Specifically, such as Figure 6 As shown, 1 is the main control unit, 2 is the power unit, 3 is the vacuum assembly, 1-1 is the main controller, 1-2 is the debugging circuit, 1-3 is the touch screen communication circuit, 1-4 is the molecular pump communication circuit, 1-5 is the backing pump communication circuit, 1-6 is the vacuum gauge communication circuit, 1-7 is the venting valve control circuit, 1-8 is the fan control circuit, 1-9 is the power control circuit, 1-10 is the voltage and current detection circuit, 1-11 is the AC-DC conversion unit, and 4 is the touch screen. 5 is the computer terminal; 2-1 is the transformer; 2-2 is the constant current source control circuit; 2-3 is the voltage detection circuit; 2-4 is the current detection circuit; 2-5 is the voltage output circuit; 2-6 is the current output circuit; 2-7 is the voltage control circuit; 2-8 is the current control circuit; 3-1 is the molecular pump; 3-2 is the forepump; 3-3 is the vacuum gauge; 3-4 is the vent valve; 3-5 is the cooling fan; 3-6 is the sealed cavity; 3-7 is the clamp; 3-8 is the alloy filament.

[0126] In practical applications, the main controller is a circuit with a microcontroller as its core, used to send and parse communication data, send and receive DC level signals of 0V-3.3V, and execute pre-set working logic.

[0127] The debugging circuit is used for connection, communication, and updating of firmware stored inside the microcontroller between the main controller and the computer.

[0128] The touchscreen communication circuit is used to assist the main controller in controlling the display content of the touchscreen and to transmit the touchscreen operation actions to the main controller.

[0129] The molecular pump communication circuit is a circuit based on 485 communication, used to realize 485 communication between the main controller and the molecular pump.

[0130] The back pump communication circuit is a circuit based on 485 communication, used for 485 communication between the main controller and the back pump.

[0131] The vacuum gauge communication circuit converts the vacuum level data measured by the vacuum gauge into an electrical signal that can be recognized by the microcontroller and transmits it to the main controller.

[0132] The vent valve control circuit and the fan control circuit are relay-based circuits that can control the power supply of the two circuits based on the electrical signals transmitted from the main controller.

[0133] The power control circuit transmits the electrical signals from the main controller to the voltage control circuit and the current control circuit.

[0134] The voltage and current detection circuit is a circuit with a 16-bit ADC detection chip as its core. It converts the voltage values ​​output by the voltage detection circuit and the current detection circuit into electrical signals and transmits them to the main controller.

[0135] The AC-DC conversion unit converts the external AC mains power into DC voltage that meets the needs of the various electrical components inside the main control unit.

[0136] Furthermore, the transformer converts the externally input 220V AC mains power into AC voltage values ​​that meet the requirements of the constant current source control circuit.

[0137] The constant current source control circuit receives electrical signals from the voltage control circuit and the current control circuit, and outputs the corresponding voltage to the voltage output circuit and the corresponding current to the current output circuit according to the signals.

[0138] The voltage detection circuit converts the voltage value range output by the voltage output circuit into the voltage value recognition range of the voltage current detection circuit.

[0139] The current detection circuit converts the current signal output by the current output circuit into a voltage signal through a sampling resistor. The converted voltage signal is within the voltage value recognition range of the voltage and current detection module.

[0140] The voltage output circuit connects the voltage output of the constant current source control circuit to both ends (clamps) of the alloy filament.

[0141] The current output circuit connects the current output of the constant current source control circuit to both ends (clamps) of the alloy filament.

[0142] The voltage control circuit receives the 0V-3.3V DC level signal output by the main control circuit module and converts it into the voltage control level signal of the constant current source control circuit.

[0143] The current control circuit receives the 0V-3.3V DC level signal output by the main control circuit module and converts it into the current control level signal of the constant current source control circuit.

[0144] It should be noted that the evacuation port of the backing pump is connected to the backing pump interface of the molecular pump via a pipe, used to evacuate the internal pressure of the sealed chamber from a state equal to the external environment to a state below 50 Pa. It is particularly important to note that, under the condition of meeting the inlet pressure of the backing pump, the higher pumping rate and greater compression ratio of the backing pump allow the vacuum assembly to reach the required vacuum state in a shorter time.

[0145] A molecular pump is connected to one end of the sealed cavity to pump the internal pressure of the sealed cavity from below 50 Pa to no more than 1 × 10⁻⁶ Pa. -5 Pa.

[0146] The vacuum gauge is connected to the pre-reserved interface in the sealed cavity and is used to measure the vacuum level of the sealed cavity.

[0147] The vent valve is connected to the vent valve interface of the molecular pump and is used to introduce external gas or to break the vacuum state of the sealed cavity.

[0148] The cooling fan is connected to the outside of the sealed cavity and blows air into the sealed cavity to dissipate heat.

[0149] The sealed cavity is mainly cylindrical, with a molecular pump interface at one end and a clamp at the other end for insertion and locking to close the cavity. A vacuum gauge interface is provided on the side.

[0150] The clamp is used to support and fix the alloy filament. One end is connected to the voltage and current signal lines output by the constant current source control circuit, so that the alloy filament is electrically connected to the constant current source control circuit. The position where the clamp contacts the sealing cavity is not electrically connected to the alloy filament; in other words, the sealing cavity and the alloy filament are not electrically connected.

[0151] Those skilled in the art will understand that Figure 6 The electrical relationship diagram shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the cleaning device applied thereto. A specific cleaning device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0152] To facilitate understanding by those skilled in the art, the working process of the impurity removal device is explained below with reference to a specific example:

[0153] S10, fix the alloy filament on the fixture, place the fixture into the sealed cavity, and lock the part of the fixture that contacts the sealed cavity so that the sealed cavity is in a closed state.

[0154] S20: Plug in the power cord and connect to AC power, then turn on the touchscreen.

[0155] S30: Start the forepump via the touchscreen. The vacuum pressure inside the sealed chamber can be observed on the touchscreen at this time. When the internal pressure of the sealed chamber reaches below 50 Pa, start the molecular pump via the touchscreen and continue waiting for the internal pressure of the sealed chamber to reach at least 1 × 10⁻⁶ Pa. -5 Pa.

[0156] S40, begin setting various parameters (status information, current information, and voltage information). Due to the different material properties and thicknesses of different alloy filaments, the specific data to be set will vary. Therefore, this configuration will be based on a certain alloy filament as an example: Set target voltage 1 (target voltage intensity), set pre-wait duration 1 (preset waiting time), set target current 1 (first current intensity), set current increase rate 1 (first change rate), set waiting duration 2 (first holding time), set target current 2 (second current intensity), set current increase rate 2 (second change rate), set waiting duration 3 (second holding time), and set current decrease rate 3 (third change rate).

[0157] S50: After completing the configuration of all parameters, if the touch screen displays that there are no abnormalities in the electrical equipment and all parameters meet the requirements, the impurity removal operation can be started via the touch screen. These parameters include the voltage, current, speed, and temperature of the vacuum pump; the air pressure (vacuum degree) in the sealed cavity; and the current output voltage and current of the power unit. At this time, the voltage across the alloy filament is increased from zero to the target voltage 1 via the real-time display on the touch screen. After a time interval of 1, the current across the filament reaches the target current 1 at a current increase rate of 1, then after a time interval of 2, the current across the filament reaches the target current 2 at a current increase rate of 2, then after a time interval of 3, and finally the current intensity decreases to zero at a current decrease rate of 3, completing the impurity removal operation.

[0158] After completing the impurity removal process for the S60 alloy filament, first shut down the molecular pump and wait for its speed to drop to zero while the sealed chamber cools down. With the molecular pump at zero speed, shut down the forepump and simultaneously open the vent valve to break the vacuum in the sealed chamber. Unlock the fixture from the sealed chamber and remove the fixture. Remove the alloy filament from the fixture. Disconnect the power to the impurity removal equipment; this completes the entire process.

[0159] It should be noted that the data involved in this application (including but not limited to current information, voltage information, etc.) are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data shall comply with the relevant laws, regulations and standards of the relevant countries and regions.

[0160] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0161] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0162] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for removing impurities, characterized in that, The method is applied to a cleanliness removal device configured with a sealed cavity, and the method includes: The system acquires status information, voltage information, and current information; the voltage information includes a target voltage intensity, which is selected based on the number of filaments to be processed; the current information includes a first current intensity, a second current intensity, a first rate of change, and a second rate of change; wherein the second current intensity is greater than the first current intensity. Based on the state information, the sealed cavity is pre-evacuated to achieve the target vacuum state; the voltage applied to the filament to be treated is increased to the target voltage intensity. According to the first rate of change, the current energizing the filament to be treated is increased to the first current intensity to preheat the filament to be treated. Based on the second rate of change, the energizing current is increased from the first current intensity to the second current intensity to obtain the target filament.

2. The method according to claim 1, characterized in that, The first rate of change is less than the second rate of change, and the current information further includes a third rate of change, a first duration for maintaining the first current intensity, and a second duration for maintaining the second current intensity. The method further includes: When the energizing current reaches the first current intensity, the filament to be treated is energized according to the first holding time; When the energizing current reaches the second current intensity, the filament to be treated is energized based on the second holding time; Having obtained the target filament, the energizing current is reduced from the second current intensity to zero according to the third rate of change.

3. The method according to claim 2, characterized in that, The first current intensity is selected based on the filament type and the size and thickness of the filament to be processed; the second current intensity is selected based on the filament type and the size and thickness of the filament to be processed. The first current intensity is used to preheat the filament to be treated, and the second current intensity is used to remove impurities from the filament to be treated.

4. A purification device, characterized in that, The impurity removal device is used to implement the impurity removal method as described in any one of claims 1 to 3; the impurity removal device includes: A vacuum assembly, comprising a vacuum pump and a sealed cavity, wherein a clamp is disposed in the sealed cavity; the vacuum pump is used to pre-evacuate the sealed cavity, and the clamp is used to fix the filament to be treated; An electrical energy unit is connected to the clamp and is used to output the energizing voltage and the energizing current to process the filament to be processed. The main control unit is connected to the vacuum assembly and the power unit respectively.

5. The impurity removal device according to claim 4, characterized in that, The impurity removal device further includes: The user interaction device is connected to the main control unit and is used to respond to operation commands and output the corresponding status information, voltage information and current information to the main control unit.

6. The impurity removal device according to claim 5, characterized in that, The main control unit includes: A main controller, connected to the user interaction device, outputs a level signal based on the voltage information and the current information, and outputs a status control command based on the status information; A power control circuit is provided, which is connected to the main controller and the power unit respectively. The main controller transmits the level signal to the power unit through the power control circuit. A vacuum pump control circuit is provided, which is connected to the main controller and the vacuum pump respectively. The main controller transmits the status control command to the vacuum pump through the vacuum pump control circuit.

7. The impurity removal device according to claim 6, characterized in that, The vacuum pump control circuit transmits commands to the vacuum pump based on the 485 communication protocol.

8. The impurity removal device according to claim 6, characterized in that, The power unit includes: A constant current source control circuit is connected to the power control circuit and the clamp respectively. The constant current source control circuit receives the level signal and outputs the corresponding energizing voltage and energizing current to the clamp based on the level signal. A transformer is used to connect to mains power and is connected to the constant current source control circuit to supply power to the constant current source control circuit.

9. The impurity removal device according to claim 6, characterized in that, The vacuum pump includes a backing pump and a molecular pump, both of which are connected to the vacuum pump control circuit. The sealed cavity includes two ports. One port of the sealed cavity is provided with the clamp, and the other port is connected to the suction port of the molecular pump. The suction port of the forepump is connected to the forepump interface of the molecular pump through a pipe.

10. The impurity removal device according to claim 6, characterized in that, The main control unit also includes an AC-DC conversion unit; The AC-DC conversion unit is used to connect to the mains power supply. The AC-DC conversion unit is connected to the main controller, the power control circuit and the vacuum pump control circuit respectively to supply power to the main controller, the power control circuit and the vacuum pump control circuit.

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