一种芯片重构方法及重构芯片
By increasing the height of the chip electrode area through additive manufacturing, the problem of chip electrodes falling off or delaminating during the packaging process is solved, the strength of the chip electrodes is improved and thermal stress is alleviated, and a more stable packaging effect is achieved.
CN116525422BActive Publication Date: 2026-07-17SHENZHEN REWO MICRO SEMICON TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN REWO MICRO SEMICON TECH CO LTD
- Filing Date
- 2023-03-07
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the prior art, electronic chip electrodes are prone to serious failures such as detachment or delamination during the packaging process, especially under the influence of thermal stress.
Method used
The chip electrode region of the wafer is raised to a second preset height by additive manufacturing, and a metal layer is fabricated in the non-chip electrode region to a first preset height to form a reconstructed electrode wafer. The metal layer is then removed and the wafer is divided to obtain the reconstructed electrode chip.
Benefits of technology
It improves the strength of the chip electrodes, alleviates the thermal stress between the chip and the packaging substrate, and avoids failures such as chip electrode detachment or delamination.
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Figure CN116525422B_ABST
Abstract
本申请提供了一种芯片重构方法，本申请提供了“通过增材制造方式将所述芯片电极区域增高至第二预设高度”的解决方案，具体为：将晶圆的芯片电极朝上，并将所述晶圆的非芯片电极区域制作金属层至第一预设高度；其中，所述第二预设高度为芯片电极需要增高的高度；通过增材制造方式将所述芯片电极区域增高至第二预设高度，得到重构电极晶圆；将所述重构电极晶圆的所述金属层去除，并进行分割得到重构电极芯片。本申请提高了芯片电极的强度，同时芯片电极高度的增加也起到了一定的缓冲作用，有效地化解了芯片电极与封装基板之间的热应力，避免出现芯片电极脱落或分层的失效故障的问题。
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