Evaporation source, film forming apparatus, and film forming method

Abstract

The present application provides an evaporation source capable of inhibiting unevenness of film formation characteristics, a film formation device, and a film formation method. An evaporation source (300) for film formation on a substrate while moving in a first direction (X) is characterized in that the evaporation source comprises: a first material chamber (321) for accommodating a film formation material; a first diffusion chamber (331) in communication with the first material chamber through a first communication portion, for diffusing and ejecting from a plurality of nozzles (331b) a material evaporated or sublimated by heating the film formation material accommodated in the first material chamber; a second material chamber (322) for accommodating a film formation material; a second diffusion chamber (332) in communication with the second material chamber through a second communication portion, for diffusing and ejecting from a plurality of nozzles (332b) a material evaporated or sublimated by heating the film formation material accommodated in the second material chamber, the first diffusion chamber and the second diffusion chamber being arranged along a second direction (Y) intersecting the first direction.

Description

Technical Field

[0001] This invention relates to an evaporation source, a film-forming apparatus, and a film-forming method. Background Technology

[0002] For film-forming apparatuses that form thin films on a substrate, there is a known technique for forming films while moving an evaporation source. According to this technique, thin films can be formed well even on large substrates. However, if the width of the evaporation source is wide in a direction intersecting (usually orthogonal) with the moving direction of the evaporation source, the heating distribution of the film-forming material contained in the evaporation source and the pressure distribution of the vaporized material become uneven, and film-forming characteristics (film thickness, etc.) are prone to become uneven.

[0003] [Existing Technical Documents]

[0004] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2020-2443

[0006] [Patent Document 2] Japanese Patent Application Publication No. 2015-67865 Summary of the Invention

[0007] [The problem the invention aims to solve]

[0008] The purpose of this invention is to provide an evaporation source, a film-forming device, and a film-forming method that can suppress uneven film-forming properties.

[0009] [Solution to the problem]

[0010] To address the aforementioned issues, the present invention employs the following solution.

[0011] That is, the evaporation source of the present invention forms a film on the substrate while moving along a first direction, characterized in that,

[0012] The evaporation source has the following features:

[0013] A first material chamber, which contains film-forming materials;

[0014] A first diffusion chamber, which is connected to a first material chamber via a first connecting portion, allows material that evaporates or sublimates by heating a film-forming material contained in the first material chamber to diffuse and be sprayed from multiple nozzles.

[0015] A second material chamber, the second material chamber containing the film-forming material; and

[0016] A second diffusion chamber, which is connected to the second material chamber via a second connecting portion, allows material that has evaporated or sublimated by heating the film-forming material contained in the second material chamber to diffuse and be ejected from multiple nozzles.

[0017] The first diffusion chamber and the second diffusion chamber are arranged along a second direction that intersects the first direction.

[0018] [Invention Effects]

[0019] As explained above, according to the present invention, unevenness in film-forming properties can be suppressed. Attached Figure Description

[0020] Figure 1 This is a schematic structural diagram of a film-forming apparatus according to an embodiment of the present invention.

[0021] Figure 2 This is a schematic structural diagram of a film-forming apparatus according to an embodiment of the present invention.

[0022] Figure 3 This is a schematic cross-sectional view of the evaporation source of Embodiment 1 of the present invention.

[0023] Figure 4 This is an illustration of the pressure distribution of the vaporized material within the diffusion chamber.

[0024] Figure 5 This is a graph showing the relationship between the nozzles installed in the diffusion chamber and the film thickness.

[0025] Figure 6 This is a schematic cross-sectional view of the evaporation source of Embodiment 2 of the present invention.

[0026] Figure 7 This is a schematic cross-sectional view of the evaporation source of Embodiment 3 of the present invention.

[0027] Figure 8 This is a schematic cross-sectional view of the evaporation source of Embodiment 4 of the present invention.

[0028] Figure 9 This is a schematic cross-sectional view of the evaporation source in Embodiment 4 (Modification 1) of the present invention.

[0029] Figure 10 This is a schematic cross-sectional view of the evaporation source in Embodiment 4 (Modification 2) of the present invention.

[0030] Figure 11 This is a schematic cross-sectional view of the evaporation source of Embodiment 5 of the present invention.

[0031] [Explanation of Labels in the Attached Image]

[0032] 10…Film forming apparatus 100…Cavity 200…Vacuum pumps 300, 300A, 300B, 300C, 300C1, 300C2, 300D…Evaporation sources 310, 310B, 310C, 310D…Housing 311…Housing body 311a…Partition 311b…First partition 311c…Second partition 311d…Cover 312…Cover 321a, 322a, 331a, 332a…Through holes 331b, 332b…Nozzle 340…Heating element 350…Reflector 410…Atmosphere chamber 420…First atmospheric arm 430…Second atmospheric arm 510…Gear 520…Guide rail 600…Film thickness monitor 610…Piping 620…Electrical wiring S…Substrate Detailed Implementation

[0033] Hereinafter, with reference to the accompanying drawings, embodiments are described in detail illustratively. However, unless otherwise specified, the dimensions, materials, shapes, and relative arrangements of the constituent components described in these embodiments are not intended to limit the scope of the invention. In the following description, the direction of movement of the evaporation source is defined as the first direction X, and the direction intersecting the first direction X is defined as the second direction Y. It should be noted that, more specifically, in each embodiment, the second direction Y is a direction orthogonal to the first direction X and parallel to the film-forming surface of the substrate.

[0034] (Example 1)

[0035] Reference Figures 1-5 This describes the evaporation source, the film-forming apparatus equipped with the evaporation source, and the film-forming method of Embodiment 1 of the present invention.

[0036] <Film Forming Device>

[0037] Reference Figure 1 and Figure 2 This describes the film-forming apparatus 10 of this embodiment. Figure 1 This is a schematic structural diagram of a film-forming apparatus according to an embodiment of the present invention, which is a simplified diagram showing the structure viewed from the front side. Figure 2 This is a schematic structural diagram of the film-forming apparatus according to an embodiment of the present invention, and is a simplified diagram showing the structure viewed from above. It should be noted that... Figure 1 and Figure 2 In the middle, the main structure is shown in perspective.

[0038] The film-forming apparatus 10 of this embodiment is a vacuum evaporation apparatus. The film-forming apparatus 10 includes a chamber 100, a vacuum pump 200 for creating a vacuum (reduced pressure atmosphere) inside the chamber 100, and an evaporation source 300 disposed inside the chamber 100. The evaporation source 300 heats the film-forming material being deposited on the substrate S disposed inside the chamber 100, thereby causing the material to evaporate or sublimate. The material evaporated or sublimated by the evaporation source 300 adheres to the substrate S, thereby forming a thin film on the substrate S.

[0039] Furthermore, the film-forming apparatus 10 includes an atmospheric chamber 410 for supplying power and coolant to the evaporation source 300, and a first atmospheric arm 420 and a second atmospheric arm 430 that move with the atmospheric chamber 410. The atmospheric chamber 410 is internally hollow and communicates with the outside of the chamber 100 through the interiors of the first atmospheric arm 420 and the second atmospheric arm 430. Therefore, the interior of the atmospheric chamber 210 is exposed to the atmosphere. With this structure, wiring connected to a power source located outside the chamber 100 and cooling pipes connected to a coolant supply device located outside the chamber 100 can be connected to the evaporation source 300.

[0040] The first atmospheric arm 420 and the second atmospheric arm 430 are provided for accommodating wiring and cooling pipes within the cavities of the movable atmospheric chamber 410. That is, the first atmospheric arm 420 and the second atmospheric arm 430 are internally formed by cavities and move in tandem with the movement of the atmospheric chamber 420. More specifically, the second arm 430 is configured such that one end is rotatable relative to the bottom plate of the chamber 100. Furthermore, one end of the first atmospheric arm 420 is rotatably supported by a shaft on the other end of the second atmospheric arm 430, and the other end of the first atmospheric arm 420 is rotatably supported by a shaft on the atmospheric chamber 410.

[0041] Furthermore, the film-forming apparatus 10 is provided with a moving mechanism for moving the evaporation source 300. In this embodiment, the moving mechanism includes a pair of guide rails 520, a pair of gears 510 disposed on both sides of a rotating shaft passing through the atmosphere chamber 410, and a drive source (not shown) such as an electric motor that rotates the rotating shaft. Racks are provided on the pair of guide rails 520 that mesh with the pair of gears 510 respectively. With the above structure, the rotating shaft is rotated by the drive source, thereby enabling the evaporation source 300 and the atmosphere chamber 410 to reciprocate along the pair of guide rails 520.

[0042] As described above, the evaporation source 300 is guided by a pair of guide rails 520 and moves linearly back and forth along the first direction X. Furthermore, while the evaporation source 300 moves along the first direction X, the film-forming material is evaporated or sublimated, thereby forming a thin film on the substrate S. It should be noted that film formation can occur during the movement of at least either the outgoing path or the return path of the evaporation source 300.

[0043] As described above, the moving mechanism in this embodiment shows a case where a rack and pinion mechanism is used. However, the moving mechanism for reciprocating the atmospheric chamber 410 and the evaporation source 300 is not limited to a rack and pinion mechanism; various known technologies such as ball screw mechanisms can also be used.

[0044] Furthermore, in the film-forming apparatus 10 of this embodiment, film thickness monitors 600 for measuring the film thickness of the film formed on the substrate S are respectively provided on both sides of the evaporation source 300 in the second direction Y. The film thickness monitors 600 measure the film thickness of the film formed on the film thickness monitor 600, and predict the film thickness of the film formed on the substrate S based on this film thickness, thereby measuring the film thickness of the film formed on the substrate S. Based on the film thickness measured by the film thickness monitors 600, the amount of film formed (for example, controlling the heating amount of the film-forming material in the evaporation source 300) is controlled, thereby enabling the thickness of the thin film formed on the substrate S to be the desired thickness.

[0045] <Evaporation Source>

[0046] Reference Figure 3 This illustrates the evaporation source 300 of Embodiment 1 of the present invention. Figure 3 This is a schematic cross-sectional view of the evaporation source of Embodiment 1 of the present invention, which simply shows the cross-section of the evaporation source 300 cut by a plane perpendicular to the first direction X.

[0047] The evaporation source 300 includes a housing 310 that houses various components, a first material chamber 321 and a second material chamber 322 disposed inside the housing 310, and a first diffusion chamber 331 and a second diffusion chamber 332 disposed inside the housing 310.

[0048] The housing 310 includes: a housing body 311 having a bottom plate portion and a side plate portion; and a cover portion 312 that closes the opening at the top of the housing body 311. The housing body 311 has a heat insulation function. For example, a passage (flow path) is pre-formed inside the housing body 311, and a heat insulation effect can be achieved by allowing coolant such as cooling water to flow through the passage. The housing body 311 houses a first material chamber 321 and a second material chamber 322, a first diffusion chamber 331 and a second diffusion chamber 332.

[0049] Both the first material chamber 321 and the second material chamber 322 are chambers used to contain film-forming materials. The first diffusion chamber 331 is a chamber that adjusts the pressure distribution by diffusing the material that evaporates or sublimates by heating the film-forming material contained in the first material chamber 321 before it reaches the plurality of nozzles 331b, thereby adjusting the inflow rate to the plurality of nozzles 331b. A first connecting portion is formed by a through hole 321a provided in the top portion of the first material chamber 321 and a through hole 331a provided in the bottom portion of the first diffusion chamber 331. Through this first connecting portion, the first material chamber 321 communicates with the first diffusion chamber 331, thereby allowing the material that evaporates or sublimates in the chamber of the first material chamber 321 to be introduced into the chamber of the first diffusion chamber 331 and diffused, and then sprayed from the plurality of nozzles 331b into the chamber 100. Regarding the second diffusion chamber 332, it is also described as follows: to adjust the pressure distribution by diffusing the material evaporated or sublimated by heating the film-forming material contained in the second material chamber 322 before it reaches the plurality of nozzles 332b, thereby adjusting the inflow rate to the plurality of nozzles 332b. Furthermore, a second communication portion is formed through the through-hole 322a provided in the second material chamber 322 and the through-hole 332a provided in the second diffusion chamber 332. Through this second communication portion, the second material chamber 322 communicates with the second diffusion chamber 332, thereby guiding the material evaporated or sublimated within the second material chamber 322 into the second diffusion chamber 332 and diffusing it to be sprayed from the plurality of nozzles 332b into the chamber 100.

[0050] Furthermore, the first material chamber 321 and the second material chamber 322 are arranged along the second direction Y, and the first diffusion chamber 331 and the second diffusion chamber 332 are also arranged along the second direction Y. In this embodiment, the width of the evaporation source 300 in the second direction Y is wider than the width in the first direction X (refer to...). Figure 2 Therefore, the first material chamber 321 and the second material chamber 322 can be arranged along the length of the evaporation source 300, and the first diffusion chamber 331 and the second diffusion chamber 332 can also be arranged along the length of the evaporation source 300.

[0051] Furthermore, in the evaporation source 300, a heating element 340 for heating the film-forming material is provided between the first material chamber 321, the first diffusion chamber 331, the second material chamber 322, and the inner wall surface of the shell body 311. It should be noted that, although not specifically illustrated, the heating element 340 is also provided near the front and inner sides of the paper. That is, the heating element 340 is provided in a manner that surrounds the outer wall surface of each chamber. As the heating element 340, a component that heats up when energized, such as a sheath heater, can preferably be used. Through this heating element 340, the film-forming materials contained in the first material chamber 321 and the second material chamber 322 are heated and evaporated or sublimated. Moreover, within the chambers of the first diffusion chamber 331 and the second diffusion chamber 332, the solidification of the evaporated or sublimated material can be suppressed.

[0052] Furthermore, in the evaporation source 300, a reflector 350 for reflecting heat is provided between the inner wall surface of the housing body 311 and the heating element 340. It should be noted that, although not specifically illustrated, reflectors 350 are also provided near the front and inner sides of the paper. Moreover, reflectors 350 are also provided between the outer wall surface of the first diffusion chamber 331 and the cover 313, and between the outer wall surface of the second diffusion chamber 332 and the cover 313. With the above structure, the transfer of heat from the heating element 340 to the housing 310 can be suppressed, thus effectively heating each chamber and preventing heat loss to the outside of the housing 310.

[0053] <Advantages of the evaporation source and film-forming device in this embodiment>

[0054] In the evaporation source 300 of this embodiment, the first diffusion chamber 331 and the second diffusion chamber 332 are arranged along the second direction Y. Therefore, compared to an evaporation source consisting of a single diffusion chamber, the heating distribution of the film-forming material contained in the evaporation source 300 and the pressure distribution of the vaporized material can be made more uniform. This suppresses unevenness in film-forming properties. Therefore, even if the length of the evaporation source 300 needs to be increased along with the enlargement of the substrate S used for film formation, unevenness in film-forming properties can still be suppressed.

[0055] Here, refer to Figure 4 This will explain in more detail the homogenization of pressure distribution in the gasified material. Figure 4 This is an explanatory diagram of the pressure distribution of the vaporized material in the diffusion chamber, and a schematic cross-sectional view that simply represents the evaporation source. As described above, the evaporation source includes a material chamber 320, a diffusion chamber 330, and a connecting portion 330a that connects the material chamber 320 and the diffusion chamber 330. Furthermore, a plurality of nozzles 335 are provided in the upper part of the diffusion chamber 330.

[0056] The film thickness formed on substrate S is determined by the rate (film thickness per unit time (film formation speed)). In multiple nozzles, if the film formation rate through each nozzle is uneven, the film thickness distribution on substrate S will differ. To achieve a uniform film thickness distribution, it is necessary to make the film formation rate through each nozzle more uniform. Furthermore, to improve quality and versatility, it is desirable to achieve a uniform film thickness distribution over a wide range of rates.

[0057] The vaporized material in material chamber 320 flows through connecting portion 330a to diffusion chamber 330. The pressure distribution of the material in diffusion chamber 330 depends primarily on the internal shape and dimensions of diffusion chamber 330, the dimensions and arrangement of connecting portion 330a, and the shape, dimensions, and arrangement of the multiple nozzles 335. Figure 4In the example shown, the pressure is highest near the center of the diffusion chamber 330 along its length, decreasing towards both sides. Since the amount of material ejected from nozzles located near the high pressure increases, and the amount of material ejected from nozzles located near the low pressure decreases, it is preferable to reduce the pressure difference between the center and the sides.

[0058] The inventors of this application have obtained the following insights: The more pressure is increased to improve the flow rate, the smaller the pressure difference becomes; conversely, the more pressure is decreased to reduce the flow rate, the larger the pressure difference becomes. Furthermore, the longer the width W of the diffusion chamber 330 in the longitudinal direction, the easier it is to increase the pressure difference; and the narrower the flow path area of ​​the diffusion chamber 330 (determined by the height H and width within the chamber), the easier it is to increase the pressure difference.

[0059] Therefore, for large substrates S, it is difficult to achieve a uniform film thickness distribution over a wide range of evaporation rates using an evaporation source consisting of a single diffusion chamber. Furthermore, the range of rates from which a uniform film thickness distribution can be achieved is narrowed, resulting in low versatility. Consequently, multiple types of evaporation sources are required.

[0060] In contrast, in this embodiment, as described above, the first diffusion chamber 331 and the second diffusion chamber 332 are arranged along the second direction Y, thereby suppressing the increase of pressure difference in each diffusion chamber. Therefore, even for a large substrate S, the film thickness distribution can be made uniform over a wide rate range. Furthermore, since material chambers (first material chamber 321 and second material chamber 322) for supplying vaporized material to the first diffusion chamber 331 and the second diffusion chamber 332 are respectively provided, it is also possible to suppress the situation where the amount of material supplied to each diffusion chamber is different.

[0061] As described above, the configuration and angle of each nozzle are set in such a way that the film thickness distribution of the thin film formed on the substrate S by material ejected from the plurality of nozzles 331b provided in the first diffusion chamber 331 and the plurality of nozzles 332b provided in the second diffusion chamber 332 is the same.

[0062] Reference Figure 5 This provides a more detailed explanation of the configuration and angle of the multiple nozzles. Figure 5 This is a graph showing the relationship between the nozzles positioned in the diffusion chamber and the film thickness. Figure 5 In (a) to (d), the first diffusion chamber P and the second diffusion chamber Q are shown simplified below, and the film thickness formed on the substrate S at a position relative to the second direction Y is shown above. It should be noted that, for simplicity and to facilitate understanding of the film thickness distribution, the film thickness relative to the second direction Y is highlighted with respect to the scale.

[0063] Figure 5(a) shows a case where the multiple nozzles PN disposed in the first diffusion chamber P and the multiple nozzles QN disposed in the second diffusion chamber Q are arranged without any inclination relative to the vertical direction. When the nozzles are not inclined relative to the vertical direction, the film thickness formed on the substrate S is thickest at the position directly above the nozzles, and gradually thins as it moves away from the position directly above. By properly setting the configuration of the multiple nozzles PN and QN, the film thickness formed by each nozzle can be made the same, and the overall film thickness can be kept constant. Although it also depends on the width of the second direction Y of the first diffusion chamber P and the second diffusion chamber Q, the desired rate range, etc., with respect to the multiple nozzles, by making all adjacent spacing equal, or by widening the spacing between adjacent nozzles closer to the connecting portion and narrowing the spacing between adjacent nozzles as they move away from the connecting portion, the overall film thickness can also be kept constant.

[0064] Figure 5 (b) shows a configuration where the outer nozzles of the plurality of nozzles provided in the first diffusion chamber P and the plurality of nozzles provided in the second diffusion chamber Q are inclined outward relative to the vertical direction. Specifically, nozzle PN1, located furthest from the second diffusion chamber Q, and nozzles located at the second and third furthest positions in the plurality of nozzles provided in the first diffusion chamber P, are inclined in a direction that the front end of the sprayed material exits the second diffusion chamber Q. Furthermore, nozzle QN1, located furthest from the first diffusion chamber P, and nozzles located at the second and third furthest positions in the plurality of nozzles provided in the second diffusion chamber Q, are inclined in a direction that the front end of the sprayed material exits the first diffusion chamber P.

[0065] When the nozzle is tilted relative to the vertical direction, the film formed on the substrate S has the thickest part at a location offset from directly above the nozzle in the direction of tilt towards the nozzle tip, and the film thickness gradually decreases as it moves away from this part. Therefore, in order to ensure that the film thickness formed through each nozzle is the same and that the overall film thickness is constant, the tilted nozzle needs to be positioned on the inside. That is, with Figure 5 Compared to the structure shown in (a), it is necessary to arrange nozzle PN1 and the like on the Q side of the second diffuser chamber, and to arrange nozzle QN1 and the like on the P side of the first diffuser chamber. Therefore, compared to Figure 5 Compared to the structure shown in (a), the width of the first diffusion chamber P and the second diffusion chamber Q in the second direction Y can be shortened. Consequently, the pressure distribution of the vaporized material within the diffusion chambers can be made more uniform. Furthermore, the evaporation source can be made more miniaturized.

[0066] Figure 5 (c) shows a configuration where all the nozzles in the first diffusion chamber P and the second diffusion chamber Q are tilted outwards relative to the vertical direction. If such a structure is adopted, then... Figure 5Similarly, the structure shown in (b) can shorten the width of the first diffusion chamber P and the second diffusion chamber Q in the second direction Y. However, with such a structure, it is necessary to shorten the distance between nozzle PN2, which is located closest to the second diffusion chamber Q among the plurality of nozzles provided in the first diffusion chamber P, and nozzle QN2, which is located closest to the first diffusion chamber P among the plurality of nozzles provided in the second diffusion chamber Q. The greater the inclination of the nozzles, the shorter this distance must be. Therefore, it is necessary to narrow the gap between the first diffusion chamber P and the second diffusion chamber Q. Therefore, this gap is limited when it is necessary to achieve the purpose of heat insulation or when it is necessary to provide space for wiring, etc., as described later, and therefore it is sometimes not possible to use this structure. Figure 5 The structure of (c).

[0067] Figure 5 (d) shows in Figure 5 In the structure shown in (b), the nozzle located on the innermost side is inclined inward relative to the vertical direction. That is, in Figure 5 In the structure shown in (b), the nozzle PN2, which is located closest to the second diffusion chamber Q among the plurality of nozzles provided in the first diffusion chamber P, is inclined in a direction toward the front end of the sprayed material exiting the second diffusion chamber Q. Furthermore, the nozzle QN2, which is located closest to the first diffusion chamber P among the plurality of nozzles provided in the second diffusion chamber Q, is inclined in a direction toward the front end of the sprayed material exiting the first diffusion chamber P.

[0068] By adopting the structure described above, and with Figure 5 Compared to the structure shown in (b), the width of the first diffusion chamber P and the second diffusion chamber Q in the second direction Y can be further shortened. However, if the inclination of nozzles PN2 and QN2 is increased, the material ejected from nozzle PN2 will contaminate nozzle QN2, and the material ejected from nozzle QN2 will contaminate nozzle PN2. Therefore, the inclination of these nozzles is preferably set to a range where the nozzles will not be contaminated.

[0069] Considering the above, and based on the rules and experimental results obtained through practical experience, the distance between the nozzle PN2, which is located closest to the second diffusion chamber Q among the multiple nozzles in the first diffusion chamber P, and the nozzle QN2, which is located closest to the first diffusion chamber P among the multiple nozzles in the second diffusion chamber Q, is preferably set to a range of 380 mm or more and 420 mm or less.

[0070] Furthermore, the slope of the nozzle PN2 relative to the vertical direction in the second direction Y is preferably set to 5 degrees or less. Similarly, the slope of the nozzle QN2 relative to the vertical direction in the second direction Y is preferably set to 5 degrees or less.

[0071] Here, the diffusion chamber expands and contracts due to thermal expansion and contraction according to the ambient temperature, particularly along the second direction Y, which is the length direction. Therefore, the first diffusion chamber P and the second diffusion chamber Q are preferably positioned at the center of the second direction Y, respectively, and are configured to expand and contract in both directions of the second direction Y, accompanied by thermal expansion and contraction. Moreover, the respective arrangement and inclination of the multiple nozzles are preferably set based on the state of thermal expansion and contraction of the first diffusion chamber P and the second diffusion chamber Q at the ambient temperature during film formation. It should be noted that a gap needs to be provided between the nozzle and the reflector 350 to prevent them from touching. This gap must be set taking into account the amount of thermal expansion and contraction of the diffusion chamber. Therefore, the closer the nozzle is to the position away from the location of the diffusion chamber, the larger the gap must be set. As described above, by positioning the diffusion chamber at the center of the second direction Y, compared to the case where it is positioned on one side, the gap for nozzles located away from the center can be minimized. As a result, it is possible to suppress the nozzle from cooling down and to suppress the adhesion of solidified material to the nozzle.

[0072] Furthermore, in order to achieve uniform heating distribution and pressure distribution of the vaporized material in the second direction Y, the evaporation source 300 is preferably configured symmetrically with respect to the center of the width in the second direction Y. In particular, the shape and size of the housing body 311, the shape and size of the inner wall of each chamber, the arrangement of the plurality of nozzles 331b and the plurality of nozzles 332b, the arrangement of the first connecting portion and the second connecting portion, the arrangement of the heating element 340, and the arrangement of the reflector 350 are preferably symmetrical with respect to the aforementioned surfaces.

[0073] Furthermore, as described above, in the film-forming apparatus 10 of this embodiment, film thickness monitors 600 are respectively provided on both sides of the evaporation source 300 in the second direction Y. One film thickness monitor (first film thickness monitor) is used to measure the film thickness of the film formed on the substrate S by material ejected from the first diffusion chamber 331. The other film thickness monitor (second film thickness monitor) is used to measure the film thickness of the film formed on the substrate S by material ejected from the second diffusion chamber 332. Preferably, film formation control of the material ejected from the first diffusion chamber 311 is performed based on the detection result of the first film thickness monitor, and film formation control of the material ejected from the second diffusion chamber 332 is performed based on the detection result of the second film thickness monitor. By performing such control, the overall film thickness can be kept constant more reliably.

[0074] The advantages of the evaporation source and film-forming apparatus described in the above embodiment are also explained in the following embodiments.

[0075] (Example 2)

[0076] Figure 6Embodiment 2 of the present invention is shown. In this embodiment, a structure is shown where the configuration of the first connecting portion and the second connecting portion differs from that of Embodiment 1. Other structures and functions are the same as in Embodiment 1; therefore, the same reference numerals are used for the same structural parts, and their descriptions are omitted.

[0077] Figure 6 This is a schematic cross-sectional view of the evaporation source of Embodiment 2 of the present invention, which simply shows the cross-section of the evaporation source 300A cut by a plane perpendicular to the first direction X.

[0078] As described in Embodiment 1 above, the evaporation source 300 is provided with a first connecting portion that connects the first material chamber 321 to the first diffusion chamber 331, and a second connecting portion that connects the second material chamber 322 to the second diffusion chamber 332. In order to uniformize the heating distribution of the film-forming material and the pressure distribution of the vaporized material and effectively suppress the unevenness of the film-forming properties, the optimal positions of the first and second connecting portions can vary depending on the configuration structure of the heating element 340, etc.

[0079] In Embodiment 1 described above, the first connecting portion and the second connecting portion are located in the evaporation source 300 at a position offset from the center of the width direction of the second direction Y. In contrast, in the evaporation source 300 of this embodiment, the first connecting portion is located at the center of the width direction of the second direction Y in the first material chamber 321, and the second connecting portion is located at the center of the width direction of the second direction Y in the second material chamber 322.

[0080] In the evaporation source 300A of this embodiment, which is configured as described above, the same effect as in Embodiment 1 can also be obtained.

[0081] (Example 3)

[0082] Figure 7 Embodiment 3 of the present invention is shown. In this embodiment, a structure is shown where the structure of the housing differs from that of Embodiment 1. The basic structure and function are the same as in Embodiment 1; therefore, the same reference numerals are used for the same structural parts, and their descriptions are omitted.

[0083] Figure 7 This is a schematic cross-sectional view of the evaporation source of Embodiment 3 of the present invention, which simply shows the cross-section of the evaporation source 300B cut by a plane perpendicular to the first direction X.

[0084] In this embodiment, a heat-insulating partition wall 311a is provided between the first material chamber 321 and the second material chamber 322. It should be noted that, in this embodiment, the partition wall 311a is also configured to shield the space between the first diffusion chamber 331 and the second diffusion chamber 332. Furthermore, the partition wall 311a is integrally formed on the housing body 311 of the housing 310B. The structure for providing the heat-insulating function of the partition wall 311a is as described in the housing body 311.

[0085] Furthermore, a heating element 340 is provided between the partition wall 311a and the first material chamber 321 and the first diffusion chamber 331, and a reflector 350 is provided between the heating element 340 and the partition wall 311a. Similarly, a heating element 340 is provided between the partition wall 311a and the second material chamber 322 and the second diffusion chamber 332, and a reflector 350 is provided between the heating element 340 and the partition wall 311a.

[0086] In the evaporation source 300B of this embodiment configured as described above, the same effects as in Embodiment 1 can be obtained. Furthermore, in this embodiment, the first material chamber 321 and the first diffusion chamber 331 are heated from all four sides, and the second material chamber 322 and the second diffusion chamber 332 are also heated from all four sides. Therefore, when the length of the evaporation source 300B in the second direction Y is long, the film-forming material can be effectively heated. It should be noted that... Figure 7 The diagram shows a configuration where the first connecting portion is located at the center of the first material chamber 321 in the second direction Y, and the second connecting portion is located at the center of the second material chamber 322 in the second direction Y. However, the positions of the first and second connecting portions can be appropriately set as described above.

[0087] (Example 4)

[0088] Figures 8-10 Embodiment 4 of the present invention is shown. In this embodiment, a structure is shown where the structure of the housing differs from that of Embodiment 1. The basic structure and function are the same as in Embodiment 1; therefore, the same reference numerals are used for the same structural parts, and their descriptions are omitted.

[0089] Figures 8-10 This is a schematic cross-sectional view of the evaporation source of Embodiment 4 of the present invention, which shows the cross-section of the evaporation sources 300C, C1, and C2 cut by a plane perpendicular to the first direction X.

[0090] In this embodiment, similar to Embodiment 3, a heat-insulating partition is provided between the first material chamber 321 and the second material chamber 322. However, in this embodiment, a first partition 311b and a second partition 311c are respectively provided on the first material chamber 321 side and the second material chamber 322 side with an open gap. In this embodiment, the first partition 311b and the second partition 311c are also configured to block the space between the first diffusion chamber 331 and the second diffusion chamber 332. Moreover, the first partition 311b and the second partition 311c are integrally provided on the shell body 311 of the shell 310C.

[0091] Furthermore, a heating element 340 is provided between the first partition wall 311b and the first material chamber 321 and the first diffusion chamber 331, and a reflector 350 is provided between the heating element 340 and the first partition wall 311b. Similarly, a heating element 340 is provided between the second partition wall 311c and the second material chamber 322 and the second diffusion chamber 332, and a reflector 350 is provided between the heating element 340 and the second partition wall 311c.

[0092] In the evaporation source 300C of this embodiment configured as described above, the same effects as in Embodiment 1 can be obtained. Furthermore, in this embodiment, similar to Embodiment 3, the first material chamber 321 and the first diffusion chamber 331 are heated from all four sides, and the second material chamber 322 and the first diffusion chamber 332 are heated from all four sides. Therefore, when the length of the evaporation source 300C in the second direction Y is long, the film-forming material can be effectively heated.

[0093] It should be noted that, in Figure 8 The diagram shows a structure in which the first and second connecting portions are positioned in the evaporation source 300C, near the center of the width direction in the second direction Y. However, the optimal configuration of the first and second connecting portions varies depending on the configuration of the heating element 340, etc., as described above. Figure 9 An evaporation source 300C1 (Modified Example 1) is shown, with its first connecting portion located at the center of the width direction of the second direction Y in the first material chamber 321, and its second connecting portion located at the center of the width direction of the second direction Y in the second material chamber 322. Furthermore, Figure 10 The evaporation source 300C2 shown is configured with the first connecting portion and the second connecting portion located on both sides of the width direction of the second direction Y (Modified Example 2).

[0094] Furthermore, in the evaporation sources 300C, 300C1, and 300C2 of this embodiment, the space between the first partition wall 311b and the second partition wall 311c can also be used as a configuration space for a portion of electrical wiring. For example, a portion of the electrical wiring 620 used to supply power for heating the heating element 340, and a portion of the piping 610 used to supply coolant to the passage provided in the housing body 311, the first partition wall 311b, and the second partition wall 311c, can be configured in the aforementioned configuration space. It should be noted that, as Figures 8-10 As shown, the cover 311d that blocks the configuration space between the first partition 311b and the second partition 311c is preferably configured to connect to the first partition 311b and the second partition 311c, thereby preventing the electrical wiring 620 and the conduit 610 from being exposed.

[0095] (Example 5)

[0096] Figure 11 Embodiment 5 of the present invention is shown. In this embodiment, a structure is shown where the structures of the shell, material chamber, and diffusion chamber differ from those shown in Embodiment 4 above. The basic structure and function are the same as in Embodiments 1 and 4; therefore, the same reference numerals are used for the same structural parts, and their descriptions are omitted.

[0097] Figure 11 This is a schematic cross-sectional view of the evaporation source of Embodiment 5 of the present invention, which simply shows the cross-section of the evaporation source 300D cut by a plane perpendicular to the first direction X.

[0098] In the above embodiments, a structure is shown where the width of the material chamber in the second direction Y is wider than the width of the diffusion chamber in the second direction Y, with a height difference between the two. Correspondingly, in the above embodiments, a structure is also adopted where a height difference is provided on the side of the housing body 311.

[0099] In contrast, in the case of the evaporation source 300D in this embodiment, the width of the material chamber in the second direction Y is equal to the width of the diffusion chamber in the second direction Y, and no height difference is provided between them. Moreover, along with this, in the housing 310D of this embodiment, no height difference is provided on the side of the housing body 311.

[0100] In addition, in this embodiment, the following structure is adopted: a middle plate 360 ​​with an opening 361 as a connecting part is provided inside a frame, thereby forming a first material chamber 321X and a first diffusion chamber 331X, and a second material chamber 322X and a second diffusion chamber 332X.

[0101] By adopting the structure described above, the manufacture of the evaporation source becomes easier compared to other embodiments.

[0102] It should be noted that, as described above, the optimal placement of the connecting portion varies depending on the configuration and structure of the heating element 340, and the placement of the opening 361 is not limited to a specific configuration. Figure 11 The structure shown.

[0103] Furthermore, the structure shown in this embodiment (a structure in which there is no height difference between the material chamber and the diffusion chamber) is not limited to Embodiment 4, but can also be applied to Embodiments 1 to 3.

Claims

1. An evaporation source, wherein the evaporation source forms a film on a substrate while moving along a first direction, characterized in that, The evaporation source has the following features: A first material chamber, which contains a film-forming material; A first diffusion chamber, which is connected to a first material chamber via a first connecting portion, allows material that evaporates or sublimates by heating a film-forming material contained in the first material chamber to diffuse and be sprayed from multiple nozzles. A second material chamber, which contains the film-forming material; and A second diffusion chamber, which is connected to the second material chamber via a second connecting portion, allows material that has evaporated or sublimated by heating the film-forming material contained in the second material chamber to diffuse and be ejected from multiple nozzles. The first diffusion chamber and the second diffusion chamber are arranged along a second direction that intersects the first direction. Between the first material chamber and the second material chamber, a first partition wall and a second partition wall are respectively provided on the side of the first material chamber and the side of the second material chamber to serve as partition walls with heat insulation function. A configuration space is provided between the first partition and the second partition for supplying a portion of piping, the piping being used to deliver coolant to passages provided in the first partition and the second partition.

2. The evaporation source according to claim 1, characterized in that, The width of the second direction is wider than the width of the first direction.

3. The evaporation source according to claim 1 or 2, characterized in that, A portion of the electrical wiring is provided in the configuration space. The cover that blocks the configuration space is configured to connect to the first partition and the second partition.

4. The evaporation source according to claim 1 or 2, characterized in that, The configuration and angle of each nozzle are set in such a way that the film thickness distribution of the thin film formed on the substrate by material ejected from the plurality of nozzles disposed in the first diffusion chamber and the plurality of nozzles disposed in the second diffusion chamber is the same.

5. The evaporation source according to claim 4, characterized in that, The distance between the nozzle located closest to the second diffusion chamber among the plurality of nozzles disposed in the first diffusion chamber and the nozzle located closest to the first diffusion chamber among the plurality of nozzles disposed in the second diffusion chamber is 380 mm or more and 420 mm or less.

6. The evaporation source according to claim 4, characterized in that, The inclination of the nozzle located closest to the second diffusion chamber among the plurality of nozzles disposed in the first diffusion chamber is 5 degrees or less in the second direction relative to the vertical direction, and the inclination of the nozzle located closest to the first diffusion chamber among the plurality of nozzles disposed in the second diffusion chamber is 5 degrees or less in the second direction relative to the vertical direction.

7. The evaporation source according to claim 4, characterized in that, The nozzle located furthest from the second diffusion chamber among the plurality of nozzles disposed in the first diffusion chamber is inclined toward the front end of the outlet side of the sprayed material away from the second diffusion chamber, and the nozzle located furthest from the first diffusion chamber among the plurality of nozzles disposed in the second diffusion chamber is inclined toward the front end of the outlet side of the sprayed material away from the first diffusion chamber.

8. The evaporation source according to claim 4, characterized in that, The first diffusion chamber and the second diffusion chamber are respectively positioned at the center of the second direction and configured to expand and contract in two directions of the second direction, accompanied by thermal expansion and contraction. The configuration and inclination of the plurality of nozzles are set based on the thermal expansion state of the first and second diffusion chambers at the ambient temperature during film formation.

9. The evaporation source according to claim 1 or 2, characterized in that, The heat-insulating shell houses the first material chamber, the first diffusion chamber, the second material chamber, and the second diffusion chamber. A heating element for heating the film-forming material is provided between the inner wall surface of the shell and the first material chamber, the first diffusion chamber, the second material chamber, and the second diffusion chamber.

10. The evaporation source according to claim 9, characterized in that, A reflector for reflecting heat is provided between the inner wall of the housing and the heating element, and the piping supplies coolant to the passage provided in the housing.

11. The evaporation source according to claim 1 or 2, characterized in that, A film thickness monitor for measuring the film thickness formed on the substrate is provided on both sides of the second direction.

12. The evaporation source according to claim 1 or 2, characterized in that, The evaporation source has the following features: A first film thickness monitor is used to measure the film thickness of a film formed on a substrate by material ejected from the first diffusion chamber. and A second film thickness monitor is used to measure the film thickness of a film formed on a substrate by material ejected from the second diffusion chamber. Film formation control of the material ejected from the first material chamber is performed based on the detection results of the first film thickness monitor, and film formation control of the material ejected from the second material chamber is performed based on the detection results of the second film thickness monitor.

13. A film-forming apparatus, characterized in that, The film-forming apparatus includes: Chamber; The evaporation source according to any one of claims 1 to 12 disposed in the chamber; and A moving mechanism that moves the evaporation source.

14. A film-forming method, characterized in that, The film-forming method uses the film-forming apparatus of claim 13 to form a film on a substrate.

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