MEMS devices and their fabrication methods
CN116553476BActive Publication Date: 2026-06-30SEMICON MFG ELECTRONICS (SHAOXING) CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG ELECTRONICS (SHAOXING) CORP
- Filing Date
- 2023-05-10
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
During the fabrication of MEMS devices, etching solution is difficult to remove from the cavity, resulting in residues that affect device performance.
Method used
A first trench is formed on the substrate to connect the vibration zone and the dicing zone, and a second sacrificial layer is reserved in the trench. The flow channel is released by etching to ensure that the etching solution can be discharged from the back cavity and the flow channel at the same time.
Benefits of technology
This effectively alleviates the problem of etching solution being difficult to remove from the cavity, reduces the risk of etching solution residue, and improves the fabrication quality of the device.
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Smart Images
Figure CN116553476B_ABST
Abstract
This invention provides a MEMS device and its fabrication method. In the MEMS device fabrication method, a second sacrificial layer, pre-formed to connect the vibration region and the cutting channel region, is used to simultaneously remove the second sacrificial layer when etching the first sacrificial layer in the vibration region. This releases a flow channel connecting the first cavity and the outside, allowing the etching solution in the first cavity to be discharged not only through the back cavity but also through this flow channel. This effectively alleviates the problem of difficult extraction of etching solution from the first cavity and reduces the risk of etching solution residue remaining in the first cavity.
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