Gas supply unit, processing device, and method for manufacturing semiconductor device

Abstract

A gas supply section, a processing apparatus, and a method for manufacturing a semiconductor device are provided, which enable processing gas to flow uniformly on a substrate. The present invention provides a gas supply section having a first opening and a second opening for supplying gas to a processing chamber on which a substrate is disposed. The first and second openings are arranged in a parallel direction parallel to the surface of the substrate. Gas supplied from the first opening is supplied towards the center of the substrate, and gas supplied from the second opening is supplied towards the periphery of the substrate. The orientation of the gas supplied from the second opening is formed at a predetermined angle based on the orientation of the gas supplied from the first opening.

Description

Technical Field

[0001] This invention relates to a gas supply unit, a processing apparatus, and a method for manufacturing a semiconductor device. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices, there is a process of forming a film on a substrate (see, for example, Patent Documents 1-3). According to these documents, a nozzle for supplying a processing gas and a nozzle for supplying an inactive gas are provided, and the inactive gas, which does not contribute to the substrate processing, is supplied so that the processing gas flows evenly on the substrate. However, there are still cases where it is difficult to achieve an even flow of the processing gas.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-062053

[0006] Patent Document 2: Japanese Patent Application Publication No. 2019-203182

[0007] Patent Document 3: International Publication No. 2021 / 020008 Summary of the Invention

[0008] This invention provides a technique that enables the processing gas to flow evenly on a substrate.

[0009] According to a first aspect of the present invention, a technique is provided having a first opening and a second opening for supplying gas to a processing chamber on which a substrate is disposed, wherein the configuration is as follows:

[0010] The first opening and the second opening are arranged in a parallel direction relative to the surface of the substrate.

[0011] The gas supplied from the first opening is directed toward the center of the substrate.

[0012] The gas supplied from the second opening is directed toward the periphery of the substrate.

[0013] The direction of the gas supplied from the second opening is determined by a predetermined angle based on the direction of the gas supplied from the first opening.

[0014] Invention Effects

[0015] According to the present invention, the processing gas can be made to flow evenly on the substrate. Attached Figure Description

[0016] Figure 1This is a schematic structural diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0017] Figure 2 This is a cross-sectional view showing the gas supply section and reaction tube of the substrate processing apparatus according to an embodiment of the present invention.

[0018] Figure 3 This is a block diagram illustrating the control unit included in the substrate processing apparatus according to an embodiment of the present invention.

[0019] Figure 4 This is a diagram showing the film formation sequence of the substrate processing apparatus according to an embodiment of the present invention.

[0020] Figure 5 These are front and cross-sectional views showing the gas nozzles included in the gas supply unit according to an embodiment of the present invention.

[0021] Figure 6 The table shows the simulation results of the gas supply unit according to the embodiment of the present invention and the simulation results of the conventional gas supply unit.

[0022] Figure 7 This is an explanatory diagram illustrating the gas partial pressure ΔPa as an evaluation index for the gas supply section in an embodiment of the present invention.

[0023] Figure 8 The simulation results of the gas supply section according to an embodiment of the present invention are presented in a table as a graph showing the gas flow, etc., when the orifice diameter of the second opening is changed.

[0024] Figure 9 The simulation results of the gas supply unit according to an embodiment of the present invention are presented in a table as a graph showing the flow rate ratio, etc., when the orifice diameter of the second opening is changed.

[0025] Figure 10 The simulation results of the gas supply section according to an embodiment of the present invention are presented in a table as a graph showing the gas flow, etc., when the tilt angle of the second opening is changed.

[0026] Figure 11 The simulation results of the gas supply unit according to an embodiment of the present invention are presented in a table as a graph showing the flow ratio, etc., when the flow rate of the gas flowing in the gas nozzle is changed.

[0027] Figure 12 These are front and sectional views showing a first modified example of the gas supply unit according to an embodiment of the present invention.

[0028] Figure 13 These are front views and cross-sectional views showing a second modified example of the gas supply unit according to an embodiment of the present invention.

[0029] Figure 14 These are front and sectional views showing a third modified example of the gas supply unit according to an embodiment of the present invention.

[0030] Figure 15 These are other variations of the gas supply section and reaction tube of the substrate processing apparatus according to embodiments of the present invention.

[0031] Figure 16A This is a diagram illustrating an example of a gas supply unit according to an embodiment of the present invention.

[0032] Figure 16B This is a diagram illustrating an example of a gas supply unit according to an embodiment of the present invention.

[0033] Figure 17 The simulation results of the gas supply unit according to an embodiment of the present invention are presented in a table as a graph showing the gas partial pressure ΔPa when the orifice diameter of the second opening is changed.

[0034] Figure 18 The simulation results of the gas supply section according to an embodiment of the present invention are presented in a table as a graph showing the gas flow, etc., when the orifice diameter of the second opening is changed.

[0035] Explanation of reference numerals in the attached figures

[0036] 10: Substrate processing apparatus (an example of a processing apparatus), 200: Wafer (an example of a substrate), 201: Processing chamber Detailed Implementation

[0037] <Embodiments of the Invention>

[0038] The following uses Figures 1 to 18 Embodiments of the present invention will be described below. Furthermore, the accompanying drawings used in the following description are all schematic. Additionally, the dimensional relationships and ratios of the elements shown in the drawings may not be consistent with reality. Moreover, the dimensional relationships and ratios of the elements may not be consistent among multiple drawings. Additionally, arrow H in the figures indicates the vertical direction of the device, arrow W indicates the width direction of the device (horizontal direction), and arrow D indicates the depth direction of the device (horizontal direction).

[0039] (Overall structure of substrate processing apparatus 10)

[0040] like Figure 1As shown, the substrate processing apparatus 10 includes a control unit 280 for controlling various parts and a processing furnace 202. The processing furnace 202 has a heater 207 as a heating mechanism. The heater 207 is a cylindrical shape extending vertically, open at the lower end, and supported on a heater base (not shown). The heater 207 also functions as an activation mechanism that uses heat to activate the processing gas. Details regarding the control unit 280 will be described later.

[0041] Inside the heater 207, a reaction tube 203 constituting a reaction vessel is arranged concentrically with the heater 207. The reaction tube 203 is formed of a heat-resistant material such as quartz (SiO2) or silicon nitride (SiC). The substrate processing apparatus 10 is a so-called hot-wall type.

[0042] The reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 arranged to surround the inner tube 12. The inner tube 12 and the outer tube 14 are arranged concentrically, and a gap S is formed between the inner tube 12 and the outer tube 14.

[0043] The lower end of the inner tube 12 is open, while the upper end is flat and cylindrical with a sealed upper end. Similarly, the outer tube 14 is also cylindrical with an open lower end and a flat upper end, sealed at the top. Furthermore, in the gap S formed between the inner tube 12 and the outer tube 14, as... Figure 2 As shown, a nozzle chamber 222 is formed. Further details regarding the nozzle chamber 222 will be described later.

[0044] Inside the inner tube 12, such as Figure 1 As shown, a processing chamber 201 is formed for processing the wafer 200, which serves as a substrate. Furthermore, the processing chamber 201 can accommodate a boat 217, an example of a substrate holding device, which holds the wafer 200 in a horizontal position and in a multi-layered arrangement along the vertical direction. The inner tube 12 surrounds the accommodated wafer 200.

[0045] Furthermore, a supply slit 235a and a first exhaust port 236, which is formed opposite to the supply slit 235a and serves as an example of an exhaust portion, are formed on the peripheral wall of the inner tube 12. The supply slit 235a extends horizontally and a plurality of them are arranged in the vertical direction. In addition, a second exhaust port 237 with a smaller opening area than the first exhaust port 236 is formed on the peripheral wall of the inner tube 12 below the first exhaust port 236.

[0046] The lower end of the reaction tube 203 is supported by a cylindrical manifold 226. The manifold 226 is made of a metal such as a nickel alloy or stainless steel, or a heat-resistant material such as quartz or SiC. A flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is mounted on the flange. In addition, an airtight component 220 such as an O-ring is arranged between the flange and the lower end of the outer tube 14, making the interior of the reaction tube 203 airtight.

[0047] At the lower end of the manifold 226, a sealing cap 219 is hermetically installed via an O-ring or other hermetically sealed component 220. Furthermore, the lower end of the reaction tube 203 is hermetically sealed. The sealing cap 219 is made of a metal such as a nickel alloy or stainless steel and is formed in a disc shape. Alternatively, the outer side of the sealing cap 219 may be covered with a heat-resistant material such as quartz or SiC.

[0048] A boat support platform 218 for supporting the boat 217 is provided on the sealing cover 219. The boat support platform 218 is made of a heat-resistant material such as quartz or SiC and functions as a heat insulation part.

[0049] The boat 217 is erected on a boat support platform 218. The boat 217 is made of a heat-resistant material such as quartz or SiC. The boat 217 has a base plate (not shown) fixed to the boat support platform 218 and a top plate disposed above it, with multiple support columns 217a (see reference) strung between the base plate and the top plate. Figure 2 ).

[0050] Multiple wafers 200 processed within the processing chamber 201 inside the inner tube 12 are held in a boat 217. The wafers 200 are held horizontally with a fixed interval between them and supported by supports 217a of the boat 217 with their centers aligned. In other words, the wafers 200 are arranged with their thickness direction set vertically and spaced apart in the vertical direction. Furthermore, the loading direction of the wafers 200 is the axial direction of the reaction tube 203. That is, the center of the wafers 200 is aligned with the central axis of the boat 217, and the central axis of the boat 217 is aligned with the central axis of the reaction tube 203.

[0051] A rotation mechanism 267 for rotating the boat is provided on the lower side of the sealing cover 219. The rotation shaft 265 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the boat support 218, so that the boat 217 is rotated by the rotation mechanism 267 via the boat support 218, thereby rotating the wafer 200.

[0052] The sealing cap 219 is raised and lowered vertically via a lifting mechanism 115 located outside the reaction tube 203. This allows the vessel 217 to be moved in and out of the processing chamber 201.

[0053] On the manifold 226, a nozzle support 350a is provided to support a gas nozzle 340a that supplies gas to the interior of the processing chamber 201. The nozzle support 350a is made of a material such as nickel alloy or stainless steel.

[0054] A gas supply pipe 310a is connected to one end of the nozzle support 350a to supply gas to the interior of the processing chamber 201. A gas nozzle 340a is connected to the other end of the nozzle support 350a. The gas nozzle 340a is formed of a heat-resistant material such as quartz or SiC. Further details regarding the gas nozzle 340a and the gas supply pipe 310a will be described later.

[0055] On the other hand, an exhaust port 230 is formed on the outer tube 14 of the reaction tube 203. The exhaust port 230 is formed below the second exhaust port 237. In addition, an exhaust pipe 231 is connected to the exhaust port 230.

[0056] Vacuum pump 246, serving as a vacuum exhaust device, is connected to exhaust pipe 231 via pressure sensor 245 (which detects the pressure inside processing chamber 201) and APC (Auto Pressure Controller) valve 244 (which acts as a pressure regulator). Exhaust pipe 231, located downstream of vacuum pump 246, is connected to a waste gas treatment device (not shown). This configuration allows vacuum exhaust to be performed by controlling the output of vacuum pump 246 and the opening of APC valve 244, ensuring the pressure inside processing chamber 201 reaches a predetermined pressure (vacuum level).

[0057] In addition, a temperature sensor (not shown) is installed inside the reaction tube 203 as a temperature detector. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor, so that the temperature inside the processing chamber 201 becomes the desired temperature distribution.

[0058] In this structure, in the processing furnace 202, multiple wafers 200 to be processed in batches are loaded onto a multi-layered boat 217 and moved into the processing chamber 201 via a boat support 218. Then, a heater 207 heats the wafers 200 moved into the processing chamber 201 to a predetermined temperature. An apparatus with such a processing furnace is called a vertical batch processing apparatus.

[0059] [Nozzle Chamber 222]

[0060] Nozzle chamber 222 extends vertically, such as Figure 2As shown, a gap S is formed between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14. Specifically, a nozzle chamber 222 is formed between a first partition wall 18a extending from the outer peripheral surface 12c of the inner tube 12 to the outer tube 14 and a second partition wall 18b extending from the outer peripheral surface 12c of the inner tube 12 to the outer tube 14, and between an arc-shaped top plate 20 connecting the top ends of the first partition wall 18a and the top ends of the second partition wall 18b and the inner tube 12.

[0061] [Gas Nozzle 340a]

[0062] The gas nozzle 340a extends vertically, such as Figure 2 As shown, it is disposed in nozzle chamber 222. Gas nozzle 340a serves as a process gas nozzle for supplying raw material gas or reaction gas, which is the process gas, to the interior of processing chamber 201. Gas nozzle 340a is configured as an I-shaped elongated nozzle. In addition, on the circumferential surface of gas nozzle 340a, openings 234 serving as gas outlets for injecting gas are formed opposite to the supply slit 235a in the parallel direction (i.e., the horizontal direction). Openings 234 are configured to include a first opening 234a and a second opening 234b. Gas supply section 342a is constituted by including gas nozzle 340a. Furthermore, details regarding the first opening 234a and the second opening 234b will be described later.

[0063] [Gas supply pipes 310a, 310b]

[0064] like Figure 1 As shown, the gas supply pipe 310a is connected to the gas nozzle 340a via the nozzle support 350a.

[0065] On the gas supply pipe 310a, in the direction of gas flow, starting from the upstream direction, there are respectively provided a raw gas supply source 360a for supplying raw gas as raw material gas for processing, a mass flow controller (MFC) 320a as an example of a flow controller, and a valve 330a.

[0066] In addition, the gas supply system consists of the raw material gas supply source 360a, MFC 320a and valve 330a.

[0067] Furthermore, a gas supply pipe 310b, supplying an inert gas as a treatment gas, is connected to the gas supply pipe 310a at a position downstream of the valve 330a in the gas flow direction. On the gas supply pipe 310b, an inert gas supply source 360b, an MFC 320b, and a valve 330b are sequentially arranged in the gas flow direction from upstream. The inert gas supply source 360b, the MFC 320b, and the valve 330b constitute the inert gas supply system.

[0068] [Control Department 280]

[0069] Figure 3 This is a block diagram showing the control structure of the substrate processing apparatus 10. The control unit 280 (so-called controller) of the substrate processing apparatus 10 is configured as a computer. The computer includes a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.

[0070] RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with CPU 121a via internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to the control unit 280.

[0071] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), etc. Inside the storage device 121c, control programs that control the operation of the substrate processing apparatus 10 and process recipes that record the steps and conditions of substrate processing, which will be described later, are stored in a readable manner.

[0072] The process formulation is a combination of steps in the substrate processing procedure described later, which enables the control unit 280 to execute the steps and obtain the specified results, and functions as a program. Hereinafter, the process formulation and control program will be referred to collectively as a program.

[0073] When the term "program" is used in this specification, there may be cases where it only includes the process recipe, cases where it only includes the control program, or cases where it includes both. Furthermore, RAM 121b is configured as a storage area (working area) for temporarily holding programs and data read from CPU 121a.

[0074] I / O port 121d is connected to the aforementioned MFC320a, 320b, valves 330a, 330b, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, rotating mechanism 267, and elevator 115.

[0075] CPU 121a is configured to read and execute control programs from storage device 121c, and to read process recipes from storage device 121c based on input of operation instructions from input / output device 122.

[0076] CPU121a is configured to control the flow rate adjustment of various gases based on MFC320a and 320b, the opening and closing of valves 330a and 330b, and the opening and closing of APC valve 244, in accordance with the read process recipe. Furthermore, CPU121a is configured to control the pressure adjustment of APC valve 244 based on pressure sensor 245, the start and stop of vacuum pump 246, and the temperature adjustment of heater 207 based on temperature sensor. Moreover, CPU121a is configured to control the rotation and speed adjustment of boat 217 via rotating mechanism 267, and the lifting and lowering of boat 217 via elevator 115.

[0077] The control unit 280 is not limited to being configured as a dedicated computer; it can also be configured as a general-purpose computer. For example, an external storage device 123 storing the aforementioned program can be prepared, and the program can be installed onto a general-purpose computer using the external storage device 123. This allows the control unit 280 of this embodiment to be configured. Examples of external storage devices include hard disks such as hard disks, optical disks such as CDs, optical discs such as MO disks, and semiconductor memories such as USB memories.

[0078] [Operational overview of the substrate processing device]

[0079] Next, use the control sequence performed by the control unit 280. Figure 4 The film formation sequence shown illustrates the operation summary of the substrate processing apparatus 10. Figure 4 The graph shows the gas supply amount (vertical axis) and gas supply timing (horizontal axis) in the film formation sequence of this embodiment. In addition, a boat 217 containing a predetermined number of wafers 200 is pre-loaded into the reaction tube 203, and the reaction tube 203 is hermetically sealed by a sealing cap 219.

[0080] If control by control unit 280 is initiated, then control unit 280 causes... Figure 1 The vacuum pump 246 and APC valve 244 are activated to exhaust the ambient gas inside the reaction tube 203 from the exhaust port 230. Furthermore, the control unit 280 controls the rotation mechanism 267 to initiate the rotation of the boat 217 and the wafer 200. This rotation continues at least until the processing of the wafer 200 is completed.

[0081] exist Figure 4 In the film-forming sequence shown, the processing step and the discharge step are set as one cycle.

[0082] The film deposition on wafer 200 is completed by performing this cycle a predetermined number of times. Once the film deposition is complete, the boat 217 is removed from the interior of reaction tube 203 by reversing the aforementioned actions. Furthermore, wafer 200 is transferred from boat 217 to a wafer cassette on a transfer rack via a wafer transfer machine (not shown), and the wafer cassette is transferred from the transfer rack to a wafer cassette stage via a wafer cassette conveyor. Finally, wafer 200 is moved outside the housing by an external transfer device.

[0083] The following describes cycle 1 of the film-forming sequence. Furthermore, in state 5 prior to executing the film-forming sequence, valves 330a and 330b are closed.

[0084] [Processing Procedure]

[0085] If the ambient gas inside the reaction tube 203 is discharged from the exhaust port 230 through the control of each part by the control unit 280, the control unit 280 opens the valve 330a and injects the raw material gas from the opening 234 of the gas nozzle 340a.

[0086] At this time, the control unit 280 operates the vacuum pump 246 and APC valve 244 to maintain a constant pressure obtained from the pressure sensor 245, and discharges the ambient gas inside the reaction tube 203 from the exhaust port 230, creating a negative pressure inside the reaction tube 203. As a result, the raw material gas flows parallel to the wafer 200, then flows from the upper part to the lower part of the gap S through the first exhaust port 236 and the second exhaust port 237, and is discharged from the exhaust pipe 231 through the exhaust port 230. Here, the control unit 280 uses the MFC 320a to control the gas supply.

[0087] [Discharge process]

[0088] If the first processing step is completed after a specified time, the control unit 280 closes the valve 330a to stop the supply of raw material gas from the gas nozzle 340a. Then, the control unit 280 opens the valve 330b to inject inactive gas from the opening 234 of the gas nozzle 340a.

[0089] In addition, the discharge process may include a process of depressurization while keeping valve 330b closed (depressurization process), and may also include a process of repeatedly injecting inactive gas into the interior of reaction tube 203 as described above (purging process) and depressurization process.

[0090] In this way, the processing step and the discharge step are set as one cycle, and the processing of wafer 200 is completed by performing this cycle a predetermined number of times. Furthermore, while the processing gas described above is of one type, if two processing gases are used (e.g., raw material gas and reactant gas), the first processing step (supplying raw material gas), the first discharge step, the second processing step (supplying reactant gas), and the second discharge step can be set as one cycle. In this case, not only the gas supply system described above is used for the raw material gas, but two gas supply systems can also be provided for both the raw material gas and the reactant gas.

[0091] (Main structural components)

[0092] Next, the opening 234 formed on the circumferential surface of the gas nozzle 340a extending in the vertical direction and the discharge hole 344 formed at the top of the gas nozzle 340a will be described.

[0093] The opening 234, as described above, is formed in a manner opposite to the supply slits 235a arranged along the vertical direction in a parallel direction (i.e., horizontal direction). Specifically, as... Figure 5 As shown, a plurality of (e.g., three) openings 234 are arranged horizontally in a manner opposite to a supply slit 235a. That is, the array of holes of the plurality of openings 234 arranged horizontally is arranged vertically. In other words, the array of holes of the plurality of openings 234 is arranged in a direction parallel to the surface of the wafer 200.

[0094] In addition, such as Figure 1 As shown, the opening 234 is formed in the middle of the gas flow path in the gas nozzle 340a, which supplies gas to flow from below to above. Furthermore, all the wafers of the plurality of wafers 200 are arranged in the area where the opening 234 is formed in the vertical direction.

[0095] Furthermore, a first opening 234a and a second opening 234b are formed to supply gas between wafers 200 arranged in the processing chamber 201. Additionally, as... Figure 5 As shown, the central first opening 234a of the three horizontally arranged openings 234 is designed to supply gas toward the center of the wafer 200. Furthermore, a pair of second openings 234b are formed symmetrically with respect to a reference line CL1 that passes through the center CP1 of the first opening 234a and the gas nozzle 340a. Moreover, the reference line CL1 extends in the direction from which gas is supplied from the first opening 234a.

[0096] In this structure, the first opening 234a and the second opening 234b inject gas in a direction that intersects (orthogonally) with the flow direction of the gas flowing inside the gas nozzle 340a. Specifically, the first opening 234a and the second opening 234b inject gas in a horizontal direction. Furthermore, the gas injected from the first opening 234a and the second opening 234b is supplied between the wafers 200 mounted in the processing chamber 201.

[0097] Furthermore, if the angle at which the reference line CL2, which passes through the second opening 234b and the center CP1, is tilted relative to the reference line CL1 is defined as the tilt angle ( Figure 5 If R1 is the direction of the gas supplied from the second opening 234b, then the tilt angle R1 is a predetermined angle. That is, the direction of the gas supplied from the second opening 234b is tilted by a predetermined tilt angle R1 based on the direction of the gas supplied from the first opening 234a. Moreover, the first opening 234a and the second opening 234b are circular, and the apertures of the first opening 234a and the second opening 234b are set to predetermined values.

[0098] In this structure, the gas injected from the first opening 234a and supplied to the processing chamber 201 is directed toward the center of the wafer 200, while the gas injected from the second opening 234b and supplied to the processing chamber 201 is directed toward the periphery of the wafer 200. Here, the opening 234 in this embodiment is circular as shown in the figure, but it is not limited to this shape and can also be elliptical, triangular, slit-shaped (quadrilateral), or pentagonal. The shape of the vent hole 344 is similarly defined. Furthermore, the vent hole 344 need not be a single hole; multiple holes can be present. In this case, it goes without saying that the total cross-sectional area of ​​the multiple holes forming the vent hole 344 is greater than the cross-sectional area of ​​the opening 234.

[0099] Furthermore, the gas nozzle 340a in this embodiment is a straight pipe (straight nozzle) type nozzle, but it is not limited to this type. For example, it could also be... Figure 16A and Figure 16B The nozzle is of the fold-back type (U-shaped bend type) shown. Figure 16A It is a type in which a first opening 234a and a second opening 234b are respectively provided after the fold-back section. Figure 16B It is a type in which a first opening 234a and a second opening 234b are respectively provided before the fold-back section. Furthermore, needless to say, although in Figure 16A and Figure 16B Although not shown in the figure, openings 234 can also be provided at the front and back of the folded-back section.

[0100] like Figure 16A and Figure 16BAs shown, if it is a U-shaped bend nozzle, the gas supplied from the opening 234 flows only toward the wafer 200. That is, the gas released from the discharge hole 344 (described later) will not affect the processing of the wafer 200 because it is directed toward the lower part of the reaction tube 203.

[0101] Here, use Figure 6 This describes the gas flow when one opening is arranged vertically, as in a conventional gas nozzle, and the gas flow when three openings 234 are arranged vertically, as in the gas nozzle 340a of the embodiment.

[0102] Figure 6 The table shows simulation results for gas flow in conventional gas nozzles and simulation results for gas flow in the gas nozzle 340a of this embodiment. As can be seen from the table, backflow occurs in conventional gas nozzles, but not in the gas nozzle 340a of this embodiment. Here, "backflow" refers to a portion of the gas ejected from the opening 234 flowing in a U-shape on the wafer 200, returning from the center side to the periphery side of the wafer 200.

[0103] In conventional gas nozzles, the rapid ejection of gas from a single opening easily leads to backflow. This backflowing gas eventually flows and exits near the wafer edge. Backflow is one of the main reasons why the film thickness at the wafer edge is thicker than in other areas. In other words, backflow is one of the main causes of deteriorated film thickness uniformity within the wafer surface.

[0104] On the other hand, in the gas nozzle 340a of the embodiment, the first opening 234a of the three openings 234 faces the center of the wafer 200, while the other two second openings 234b are inclined relative to the reference line CL1. Gas is dispersed and injected from the three openings 234 respectively, thereby suppressing the generation of backflow.

[0105] in addition, Figure 6 The simulation results of the gas partial pressure ΔPa of the conventional gas nozzle and the simulation results of the gas partial pressure ΔPa of the gas nozzle 340a of the embodiment are shown.

[0106] Here, use Figure 7 Explain "Gas partial pressure ΔPa". Calculate the circumferential average of the gas partial pressure at the edge (145mm radius) of a 300mm outer diameter wafer and the circumferential average of the gas partial pressure at the center (7mm radius). The difference between them is the gas partial pressure ΔPa (sometimes referred to as "ΔPa" below).

[0107] like Figure 6As shown, the ΔPa of the conventional gas nozzle is 5.7 Pa, while the ΔPa of the gas nozzle 340a in the embodiment is 1.5 Pa. The ΔPa of the gas nozzle 340a in the embodiment is less than that of the conventional gas nozzle. Based on this ΔPa result, it can be seen that the gas nozzle 340a in the embodiment suppresses the generation of backflow compared to the conventional gas nozzle.

[0108] Additionally, at the top (upper end) of the gas nozzle 340a, such as Figure 5 As shown, an outlet hole 344 is formed to release gas in a direction different from that of the wafer 200. The diameter of the outlet hole 344 is larger than the diameter of the first opening 234a and the diameter of the second opening 234b, or the cross-sectional area of ​​the outlet hole 344 is larger than the cross-sectional area of ​​the first opening 234a and the cross-sectional area of ​​the second opening 234b.

[0109] In this structure, by forming the outlet hole 344 as shown, the gas flowing inside the gas nozzle 340a becomes uniform in the vertical direction of the gas nozzle 340a. As a result, the flow rates of the gas supplied from the first opening 234a and the second opening 234b become uniform in the vertical direction.

[0110] Next, use Figure 8 , Figure 9 The table shown illustrates the results of a thermofluid simulation performed by changing the orifice diameter of the opening 234 of the gas nozzle 340a. All other specifications except the orifice diameter remain the same. Furthermore, the orifice diameter of the first opening 234a is set to a constant 2.7 mm.

[0111] • In Evaluation Example 1, the ratio (aperture ratio) of the aperture of the first opening 234a to the aperture of the second opening 234b was set to 1:1.

[0112] • In Evaluation Example 2, the ratio of the aperture of the first opening 234a to the aperture of the second opening 234b (aperture ratio) was set to 1:0.85.

[0113] • In Evaluation Example 3, the ratio of the aperture of the first opening 234a to the aperture of the second opening 234b (aperture ratio) was set to 1:0.75.

[0114] like Figure 8 As shown, regarding the gas flow on wafer 200, in Evaluation Examples 1 and 2, no backflow occurred on wafer 200. However, in Evaluation Example 3, backflow occurred on wafer 200. But the backflow in Evaluation Example 3 differs from the backflow in conventional examples (see...). Figure 6 The degree of inhibition is compared to that of the previous one.

[0115] like Figure 9As shown, the ratio of the cross-sectional area of ​​the second opening 234b to the cross-sectional area of ​​the first opening 234a is 1 in Evaluation Example 1, 0.7 in Evaluation Example 2, and 0.5 in Evaluation Example 3.

[0116] like Figure 9 As shown, the ratio of the flow rate of gas supplied from the second opening 234b to the flow rate of gas supplied from the first opening 234a is approximately 1 in Evaluation Example 1, 0.69 in Evaluation Example 2, and 0.49 in Evaluation Example 3.

[0117] Here, "approximately 1" means within ±5% of 1.

[0118] like Figure 9 As shown in the table, the ΔPa on wafer 200 is 1.5Pa in Evaluation Example 1, 2.7Pa in Evaluation Example 2, and 4.0Pa in Evaluation Example 3.

[0119] [Research on gas flow on wafers]

[0120] Based on the foregoing results, the critical condition for avoiding backflow is considered to be the specification of Evaluation Example 2. Observing the simulated gas flow in Evaluation Example 2 also reveals that backflow occurs at the wafer's edge. However, the area within a few millimeters (3mm to 5mm) at the wafer's edge is a region where fine patterns do not form; therefore, the specification of Evaluation Example 2 can be considered as the critical condition for substantially preventing backflow on the wafer.

[0121] In other words, the flow rate ratio used to prevent backflow is 0.7 to 1.0. The cross-sectional area ratio of the opening used to prevent backflow is 0.7 to 1. Furthermore, the upper limit of ΔPa used to prevent backflow is approximately 3.0 or less.

[0122] Next, use Figure 10 The table shown illustrates the results of a thermofluid simulation performed by changing the tilt angle R1 of the second opening 234b formed on the gas nozzle 340a. Furthermore, all other specifications besides the tilt angle R1 remain the same.

[0123] • In evaluation example 4, the tilt angle R1 was set to 20 degrees.

[0124] • In evaluation example 5, the tilt angle R1 was set to 25 degrees.

[0125] • In evaluation example 6, the tilt angle R1 was set to 30 degrees.

[0126] • In evaluation example 7, the tilt angle R1 was set to 35 degrees.

[0127] • In evaluation example 8, the tilt angle R1 was set to 45 degrees.

[0128] like Figure 10 As shown, no backflow occurred in evaluation examples 4, 5, and 6. Backflow occurred in evaluation examples 7 and 8. Therefore, it can be concluded that if the tilt angle R1 is between 20 and 30 degrees, backflow will not occur. Furthermore, regarding the backflow in evaluation examples 7 and 8, compared with the backflow in previous examples (see...),... Figure 6 The degree of inhibition is compared to that of the previous one.

[0129] like Figure 10 As shown, ΔPa is 2.6 Pa in Evaluation Example 4, 2.9 Pa in Evaluation Example 5, 3.1 Pa in Evaluation Example 6, 7.8 Pa in Evaluation Example 7, and 9.7 Pa in Evaluation Example 8. Therefore, the upper limit of ΔPa for preventing backflow is 3.1 Pa or less.

[0130] Next, use Figure 11 The table shown illustrates the results of a thermal fluid simulation performed by varying the flow rate of the gas flowing in the gas nozzle 340a. Furthermore, the orifice diameters of the first opening 234a and the second opening 234b are set to 2.7 mm, and all other specifications are the same.

[0131] • In evaluation example 9, the gas flow rate was set to 3 slm.

[0132] • In evaluation example 10, the gas flow rate was set to 5.9 slm.

[0133] • In evaluation example 11, the gas flow rate was set to 12 slm.

[0134] Regarding the uniformity of the flow rate of the gas supplied from the first opening 234a and the second opening 234b respectively, such as Figure 11 As shown in the table, the values ​​were ±1.2% in Evaluation Example 9, ±1.52% in Evaluation Example 10, and ±0.81% in Evaluation Example 11.

[0135] [Research on opening 234]

[0136] according to Figure 11 The table shown tends to show that the flow rate supplied from the first opening 234a is less than the flow rate supplied from the second opening 234b. In other words, when the gas flow rate supplied from the first opening 234a is less, the flow uniformity is higher, resulting in satisfactory backflow suppression. That is, it is believed that by increasing the aperture or cross-sectional area of ​​the second opening 234b compared to the first opening 234a, the gas flow rate supplied from the first opening 234a increases, which is satisfactory for backflow suppression.

[0137] Figure 17The aperture ratio of the opening diameter (based on the aperture ratio of the first opening 234a) is taken as the horizontal axis, and the vertical axis is set as the gas partial pressure ΔPa. That is to say, Figure 17 This indicates the dependence of the gas partial pressure ΔPa on the aperture ratio of the first opening 234a to the second opening 234b. According to... Figure 17 It can be seen that since no backflow occurs when the gas partial pressure ΔPa is less than approximately 3, even when the aperture ratio is set to its maximum (in Figure 17 Even with a bore diameter ratio of 3.33, no backflow occurred.

[0138] Here, Figure 17 The point where the gas partial pressure ΔPa is shown is 2.7. Figure 8 The conditions for Evaluation Example 2 are shown. Additionally, the point where the gas partial pressure ΔPa is 1.5 is... Figure 8 The conditions of Evaluation Example 1 are shown. Furthermore, as the aperture ratio increases compared to 1, the gas partial pressure ΔPa decreases. With an aperture ratio of 1.85 as the boundary, although slowly, the gas partial pressure ΔPa begins to rise. Therefore, it can be concluded that the ideal maximum aperture ratio is at an aperture ratio of 1.85.

[0139] Next, in Figure 17 It can be seen that when the aperture ratio is between 1.49 and 1.85, the gas partial pressure ΔPa remains approximately constant at a value less than 1 (approximately 0.8), and when the aperture ratio is between 1.2 and 2.1, the gas partial pressure ΔPa becomes approximately 0.9 or less. In other words, if the aperture ratio is between 1.2 and 2.1, it can be determined that the gas flows uniformly on the surface of wafer 200. Under this condition, the gas can be supplied uniformly to the surface of wafer 200, and therefore, if, for example, there is a gas contributing to film formation, an improvement in the uniformity of film formation within the wafer surface can be expected.

[0140] Figure 18 From Figure 17 The graph shown represents a simulation of 12 points, selecting four points with an aperture ratio greater than 1 (evaluation examples 12, 13, 14, and 15). From left to right, the aperture ratios are 1.19, 1.85, 2.41, and 3.33, respectively. Figure 18 Relative to Figure 8 The simulation results are for cases where the aperture ratio is greater than 1. As these evaluation examples show, no backflow occurs under any condition.

[0141] On the other hand, it is known that if the flow rate of the second opening 234b is greater than that of the first opening 234a, the backflow is suppressed; however, it is unclear whether the value of ΔPa increases if the aperture ratio is greater than 1.85. Therefore, after a detailed examination of the simulation results with aperture ratios of 2.41 and 3.33, it was found that the flow of gas from the first opening 234a is stagnant. Figure 18 As shown, the simulation results for aperture ratios of 2.41 and 3.33 show that the flow rate of the second opening 234b relative to the flow rate of the first opening 234a (flow rate ratio) is approximately 14 and approximately 50, respectively, and the flow rate of the first opening 234a is extremely low.

[0142] The phenomenon that ΔPa increases and stagnation occurs when the flow rate at the second opening 234b increases and the flow rate at the first opening 234a decreases is considered to be caused by the backflow of gas supplied from the second opening 234b. Therefore, gas is supplied from the second opening 234b to suppress the backflow in order to suppress the flow of gas at the first opening 234a. However, if the flow rate at the second opening 234b is too high, backflow of gas supplied from the second opening 234b occurs, resulting in gas flowing towards the center instead of towards the exhaust direction. Since the flow rate of gas supplied from the first opening 234a is less than this backflow, it is difficult to eliminate the backflow, thus causing stagnation of gas supplied from the first opening 234a.

[0143] On the other hand, the reason why no backflow occurred in the simulation results is as follows: in addition to the influence of the gas supplied from the first opening 234a, there are also two second openings 234b located at two points separated from the first opening 234a. Therefore, even if backflow of gas supplied from the second openings 234b occurs, it will be well offset against the gas flow in the direction toward the center. On the other hand, for gas flow that occurs but is not in the direction toward the center, since the second openings 234b are located toward the periphery of the wafer 200, it is believed that they have almost no effect on the gas flow on the wafer 200.

[0144] The reason why the value of ΔPa increases when the flow rate at the second opening 234b increases and the flow rate at the first opening 234a decreases is attributed to the stagnation of gas supplied from the first opening 234a caused by the backflow of gas supplied from the second opening 234b. Conversely, the reason why the value of ΔPa increases when the flow rate at the first opening 234a increases and the flow rate at the second opening 234b decreases is also attributed to the backflow of gas supplied from the first opening 234a. Figure 17 When the aperture ratio is less than 1.19, a flow occurs from the first opening 234a.

[0145] The backflow of the supplied gas causes ΔPa to rise sharply; on the other hand, when the aperture ratio 0 is greater than 2.1, stagnation of the gas supplied from the first opening 234a occurs, causing ΔPa to rise slowly.

[0146] In other words, the backflow of gas supplied from the first opening 234a has a significant impact on the gas flow on the wafer 200. On the other hand, the gas supplied from the first opening 234a...

[0147] The effect of gas stagnation on the gas flow on wafer 200 is linear. It is believed that the effect is less due to the backflow of gas supplied from the second opening 234b and more due to the flow rate of gas supplied from the first opening 234a. In other words, it is known that when supplying, for example, a film-forming contributing gas to wafer 200, the backflow of gas supplied from the first opening 234a has a greater impact.

[0148] return Figure 18 For example, ΔPa is 2.1Pa when the aperture ratio is 3.33. Furthermore, the simulation results show that no reflow is observed on wafer 200 (in...). Figure 18 (The flow of gas flowing back is not represented in the text). This is because the backflow of the gas supplied from the second opening 234b cancels each other out, so the effect of the backflow on ΔPa is very small compared to the first opening 234a. However, it is believed that it more significantly reflects the crystal structure opposite to the first opening 234a.

[0149] The effect of stagnation on circle 200. That is, it is believed that the backflow of the gas supplied from the second opening 234b is the cause of the stagnation of the gas supplied from the first opening 234a.

[0150] However, its effect on ΔPa is indirect.

[0151] return Figure 8 For example, when the aperture ratio is 0.85 (Evaluation Example 2), ΔPa is 2.7Pa. In fact, the simulation results show that no reflow is observed on wafer 200 (in Figure 8 (The flow of the backflow is not represented in the text). Therefore, although it was described as suppressing the generation of backflow on wafer 200 even if it occurs, strictly speaking, it means that although backflow occurs on wafer 200, it is eliminated.

[0152] return Figure 17 When the aperture ratio is between 1.19 and 2.1, ΔPa remains stable at a value between 0.8 and 0.9. Therefore, it can be assumed that no backflow occurs from either the first opening 234a or the second opening. Alternatively, it can be assumed that even if backflow occurs, it cancels out exactly.

[0153] As can be seen from this embodiment, even if reflow is shown in the simulation results, considering the impact on the processing on wafer 200, it is sufficient as long as ΔPa is below 2.7. That is to say, if... Figure 17 As shown, if expressed as an aperture ratio, it only needs to be between 0.85 and 3.33. In this case, the cross-sectional area ratio is between 0.7 and 11.1. Furthermore, if judged by whether backflow is suppressed (eliminated) in the simulation results even when backflow occurs, then... Figure 18 As shown, as long as the gas partial pressure ΔPa is below 2.1, it is acceptable. Figure 17 The aperture ratio shown is 0.93 or higher and 2.25 or lower. In addition, it is preferable to have conditions that do not have the effects of backflow or stagnation, such as a gas partial pressure ΔPa of 0.9 or lower. Therefore, an aperture ratio of 1.1 or higher and 2.1 or lower is acceptable.

[0154] Furthermore, the above discussion focuses on aperture ratio, but this is just one indicator; the same applies to gas flow rate, cross-sectional area ratio, and so on.

[0155] (First variation)

[0156] Next, use Figure 12 The first variation is described. In the first variation, a pair of gas nozzles 540a and 540b are provided, and the upper ends of gas nozzle 540a and gas nozzle 540b are connected by a U-shaped (U-shaped) connecting part 542 that is open at the bottom.

[0157] Specifically, the device includes a gas nozzle 540a for supplying gas from below to above and a gas nozzle 540b for supplying gas from above to below. Furthermore, the gas nozzles 540a and 540b are arranged in the longitudinal direction of the device. Additionally, the gas nozzles 540a and 540b have an elliptical shape extending along the width of the device.

[0158] On the gas nozzle 540a, a pair of openings 534 arranged horizontally are arranged vertically. Each opening 534 consists of a first opening 534a and a second opening 534b. The first opening 534a and the second opening 534b are symmetrically arranged with respect to a reference line CL3 extending along the major axis of the elliptical gas nozzle 540a. Furthermore, the first opening 534a is configured to inject gas toward the gas nozzle 540b and toward the center of the wafer 200.

[0159] Similarly, on the gas nozzle 540b, a pair of openings 534 arranged horizontally are arranged vertically. Each opening 534 consists of a first opening 534c and a second opening 534d. The first opening 534c and the second opening 534d are symmetrically arranged with respect to a reference line CL4 extending along the major axis of the elliptical gas nozzle 540b. Furthermore, the first opening 534c is configured to inject gas toward the gas nozzle 540a and toward the center of the wafer 200. Here, "center" includes not only the direction in which the gases supplied from the first openings 534a and 534c mix together at the center of the wafer 200, but also any direction in which they mix together on the wafer 200. Moreover, it is preferable that the gases mix together before reaching the center of the wafer 200.

[0160] Furthermore, the first opening 534a and the second opening 534b formed on the gas nozzle 540a and the first opening 534c and the second opening 534d formed on the gas nozzle 540b are provided on the same plane.

[0161] In this structure, the gas ejected from the first opening 534a of the gas nozzle 540a and the gas ejected from the first opening 534c of the gas nozzle 540b mix together before reaching the wafer 200, or mix together before reaching the center of the wafer 200, that is, in the interval from the periphery to the center of the wafer 200. Furthermore, in this variation, a U-shaped nozzle is disclosed, but it is not limited to this shape; a V-shaped nozzle, an N-shaped nozzle, or a W-shaped nozzle may also be used. Additionally, in this variation, the number of openings (first opening and second opening) can be two or more, for example, three as in the embodiment.

[0162] (Second variation)

[0163] Next, use Figure 13 The second modification is described below. In the second modification, a pair of gas nozzles 640a and 640b are provided, and the lower ends of gas nozzle 640a and gas nozzle 640b are connected by a U-shaped connecting portion 642 that is open at the top. Furthermore, gas nozzles 640a and 640b are arranged in the longitudinal direction of the device. Additionally, the outer shape of gas nozzles 640a and 640b is an ellipse extending along the width direction of the device.

[0164] On the gas nozzle 640a, a pair of openings 634 arranged horizontally are arranged vertically. Each opening 634 consists of a first opening 634a and a second opening 634b. The first opening 634a and the second opening 634b are symmetrically arranged with respect to a reference line CL5 extending along the major axis of the elliptical gas nozzle 640a. Furthermore, the first opening 634a is configured to inject gas toward the gas nozzle 640b and toward the center of the wafer 200.

[0165] Similarly, on the gas nozzle 640b, a pair of openings 634 arranged horizontally are arranged vertically. Each opening 634 consists of a first opening 634c and a second opening 634d. The first opening 634c and the second opening 634d are symmetrically arranged with respect to a reference line CL6 extending along the major axis of the elliptical gas nozzle 640b. Furthermore, the first opening 634c is configured to inject gas toward the gas nozzle 640a and toward the center of the wafer 200.

[0166] Furthermore, the first opening 634a and the second opening 634b formed on the gas nozzle 640a and the first opening 634c and the second opening 634d formed on the gas nozzle 640b are provided on the same plane.

[0167] In this structure, the gas ejected from the first opening 634a of the gas nozzle 640a and the gas ejected from the first opening 634c of the gas nozzle 640b mix together before reaching the wafer 200, or mix together on the wafer 200. Furthermore, in this modified example, only a U-shaped nozzle is described, but it is not limited to this shape; it can also be Y-shaped, and the gas nozzle 640 with the opening 634 can also be concave. Additionally, in this modified example, the number of openings can be two or more, for example, three as in the embodiment.

[0168] Next, use Figure 14 The third variation is described below. The third variation is a structure with multiple straight nozzles (straight pipe nozzles). For example... Figure 14 As shown, the I-shaped gas nozzles 740a and 740b are provided separately. Furthermore, the gas nozzles 740a and 740b are not connected and are arranged along the depth direction of the device. Additionally, the gas nozzles 740a and 740b have an elliptical shape extending along the width direction of the device.

[0169] On the gas nozzle 740a, a pair of openings 734 arranged horizontally are arranged vertically. Each opening 734 consists of a first opening 734a and a second opening 734b. The first opening 734a and the second opening 734b are symmetrically arranged with respect to a reference line CL7 extending along the major axis of the elliptical gas nozzle 740a. Furthermore, the first opening 734a is configured to inject gas toward the gas nozzle 740b and toward the center of the wafer 200.

[0170] Similarly, on the gas nozzle 740b, a pair of openings 734 arranged horizontally are arranged vertically. Each opening 734 consists of a first opening 734c and a second opening 734d. The first opening 734c and the second opening 734d are symmetrically arranged with respect to a reference line CL8 extending along the major axis of the elliptical gas nozzle 740b. Furthermore, the first opening 734c is configured to inject gas toward the gas nozzle 740a and toward the center of the wafer 200.

[0171] Furthermore, the first opening 734a and the second opening 734b formed on the gas nozzle 740a, and the first opening 734c and the second opening 734d formed on the gas nozzle 740b are disposed on the same plane.

[0172] In this structure, the gas injected from the first opening 734a of the gas nozzle 740a and the gas injected from the first opening 734c of the gas nozzle 740b mix together before reaching the wafer 200. Furthermore, in this modified example, the number of openings can be two or more, for example, three as in the embodiment.

[0173] Furthermore, in this embodiment, the flow rate of the gas supplied from the second opening, the aperture of the second opening, and the cross-sectional area of ​​the second opening can be configured to be greater than the flow rate of the gas supplied from the first opening, the aperture of the first opening, and the cross-sectional area of ​​the first opening, respectively. This suppresses backflow of the gas supplied from the first opening. Moreover, since the gases supplied from the first and second openings flow evenly within the plane of the wafer 200, the in-plane uniformity of the film thickness on the wafer 200 can be improved.

[0174] Furthermore, in this embodiment, the flow rates of the gas supplied from the two second openings 234b, the apertures of the two second openings 234b, and the cross-sectional areas of the two second openings 234b are approximately the same or identical, although at least one of them may be approximately the same or identical. This suppresses the backflow of gas supplied from the first opening 234a.

[0175] Furthermore, in this embodiment, the tilt angle of the second opening 234b, which is tilted based on the direction in which the gas supplied from the first opening 234a is directed, can be determined based on the arrangement relationship between the first opening 234a and the wafer 200, which is the object to be processed. Therefore, the gas supplied from the second opening 234b can be supplied towards the periphery of the wafer 200 facing the processing chamber 201. Thus, backflow of the gas supplied from the first opening 234a can be suppressed.

[0176] According to this embodiment, at least one of the effects described below (1) to (12) can be achieved.

[0177] (1) According to this embodiment, based on the results of various thermal fluid simulations, it can be seen that by injecting gas from the second opening 234b and supplying it to the processing chamber 201, the backflow of gas injected from the first opening 234a and supplied to the processing chamber 201 is suppressed. As a result, the gases supplied from the first opening 234a and the second opening 234b respectively flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to conventional structures.

[0178] (2) According to this embodiment, such as Figure 9 and Figure 18 As shown in the table of Evaluation Examples 1, 2, 12, 13, 14, and 15, by setting the flow rate of the gas supplied from the second opening 234b relative to the flow rate of the gas supplied from the first opening 234a to be 0.7 or more and 49.0 or less, gas backflow can be suppressed compared to Evaluation Example 3. Therefore, the gases supplied from the first opening 234a and the second opening 234b respectively flow equally within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to Evaluation Example 3.

[0179] (3) According to this embodiment, such as Figure 9 As shown in Evaluation Examples 1, 2, 12, 13, 14, and 15, by setting the cross-sectional area of ​​the second opening to be 0.7 to 11.1 or less relative to the cross-sectional area of ​​the first opening, gas backflow can be suppressed compared to Evaluation Example 3. Therefore, the gases supplied from the first opening 234a and the second opening 234b flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to Evaluation Example 3.

[0180] (4) According to this embodiment, such as Figure 8As shown in Evaluation Examples 1, 2, 12, 13, 14, and 15, by setting the aperture ratio of the second opening 234b to the aperture ratio of the first opening 234a to 0.85 or more and 3.33 or less, gas backflow can be suppressed compared to Evaluation Example 3. Therefore, the gases supplied from the first opening 234a and the second opening 234b flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to Evaluation Example 3.

[0181] (5) According to this embodiment, such as Figure 10 As shown in the table of Evaluation Examples 4 to 6, by setting the tilt angle R1 of the second opening 234b to 20 degrees or more and 30 degrees or less, gas backflow can be suppressed compared to Evaluation Examples 7 and 8. As a result, the gases supplied from the first opening 234a and the second opening 234b respectively flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to Evaluation Examples 7 and 8.

[0182] (6) According to this embodiment, two second openings 234b are provided. Figure 8 , Figure 9 , Figure 18 In the evaluation examples 1, 2, 3, 12, 13, 14, and 15 shown in the table, the gas flow rates supplied from the two second openings 234b are approximately the same or identical. This suppresses backflow of the gas supplied from the first opening 234a. Furthermore, the gases supplied from the first opening 234a and the second opening 234b flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to conventional structures.

[0183] Furthermore, in this invention, "substantially similar" means that, based on one party, the other party is within ±95% of the first party.

[0184] (7) According to this embodiment, two second openings 234b are provided. Figure 8 , Figure 9 , Figure 18 In the evaluation examples 1, 2, 3, 12, 13, 14, and 15 shown in the table, the two second openings 234b are configured with the same aperture. This suppresses the backflow of gas supplied from the first opening 234a. Furthermore, the gas supplied from both the first opening 234a and the second opening 234b flows evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to conventional structures.

[0185] (8) According to this embodiment, two second openings 234b are provided. Figure 8 , Figure 9, Figure 18 In the evaluation examples 1, 2, 3, 12, 13, 14, and 15 shown in the table, the two second openings 234b are configured with the same cross-sectional area. This suppresses the backflow of gas supplied from the first opening 234a. Furthermore, the gases supplied from the first opening 234a and the second opening 234b flow evenly within the plane of the wafer 200, thus improving the uniformity of the film thickness within the plane of the wafer 200 compared to conventional structures.

[0186] (9) According to this embodiment, an outlet hole 344 is formed at the top of the gas nozzle 340a. Therefore, the gas flowing inside the gas nozzle 340a is equal in the vertical direction of the gas nozzle 340a, thereby making the flow rates of the gas supplied from the first opening 234a and the second opening 234b equal in the vertical direction.

[0187] (10) According to this embodiment, a first opening 234a and a second opening 234b are formed such that gas is supplied between wafers 200 disposed in the processing chamber 201. Therefore, by making the flow rate of gas supplied between the wafers 200 from the first opening 234a less than the flow rate of gas supplied between the wafers 200 from the second opening 234b, the gas supplied between the wafers 200 can be made more uniform. Furthermore, the same applies to the aperture ratio (aperture) and the cross-sectional area ratio (cross-sectional area).

[0188] (11) According to this embodiment, the gas supplied from the first openings 534a and 634a of one gas nozzle 540a and 640a and the gas supplied from the first openings 534c and 634c of the other gas nozzle 540b and 640b are mixed together before reaching the wafer 200. Therefore, the gas supplied from each of the first openings 534a, 534c, 634a, and 634c is supplied to the wafer 200 evenly after mixing. Thus, no backflow occurs on the wafer 200, and the gas flows evenly within the surface of the wafer 200, thereby improving the in-plane uniformity of the film thickness.

[0189] (12) According to this embodiment, the gas supplied from the first opening 734a of one gas nozzle 740a and the gas supplied from the first opening 734c of the other gas nozzle 740b are mixed together before reaching the wafer 200. Therefore, the gases supplied from each of the first openings 734a and 734c are supplied to the wafer 200 evenly after mixing. Thus, no backflow occurs on the wafer 200, and the gas flows evenly within the surface of the wafer 200, thereby improving the in-plane uniformity of the film thickness in the wafer 200.

[0190] <Other variations>

[0191] The following is for reference Figure 15 Other variations of the present invention will be described. Furthermore, parts identical to this embodiment will be omitted, and the description will focus primarily on the parts that differ from this embodiment.

[0192] In the circumferential direction of the reaction tube 203, on both sides of the nozzle chamber 222, such as Figure 15 As shown, a pair of nozzle chambers 822 extending in the vertical direction are provided. Specifically, a nozzle chamber 822a is provided on the inner side in the depth direction of the device, and a nozzle chamber 822b is provided on the near front side in the depth direction of the device.

[0193] A gas nozzle 840a is disposed in nozzle chamber 822a, and the gas nozzle 840a is configured as an I-shaped long nozzle. A gas nozzle 840b is disposed in nozzle chamber 822b, and the gas nozzle 840b is configured as an I-shaped long nozzle.

[0194] Circular openings 834a and 834b are arranged vertically on gas nozzles 840a and 840b. Inactive gas is injected into the processing chamber 201 from the openings 834a and 834b of the gas nozzles 840a and 840b. The gas nozzles 840a and 840b, including the circular openings 834a and 834b, constitute the second gas supply section 842.

[0195] In this structure, the flow rate of gas supplied from the openings 834a and 834b of gas nozzles 840a and 840b differs from the flow rate of gas supplied from the second opening 234b and the flow rate of gas supplied from the first opening 234a. Furthermore, when gas is injected from the opening 234 of gas nozzle 340a, a small amount of inactive gas is injected from the openings 834a and 834b of gas nozzles 840a and 840b. This suppresses back diffusion. Moreover, the inactive gas injected from the openings 834a and 834b is suppressed to a flow rate that does not contribute to the flow of gas injected from the opening 234.

[0196] Furthermore, the present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various other embodiments can be adopted. For example, in the above embodiments, although not specifically described, the number of second openings may be greater than the number of first openings.

[0197] Furthermore, in the above embodiment, the first opening and the second opening are provided separately. However, for example, it may be configured such that the gas ejected from the first opening is ejected toward the center of the wafer 200 in the processing chamber, and the gas ejected from the second opening is ejected toward the periphery of the wafer 200 in the processing chamber 201, and the first opening and the second opening are slits that are continuously provided.

[0198] In addition, the substrate processing apparatus 10 and 810 can be used not only in semiconductor manufacturing apparatus, but also in apparatuses for processing glass substrates, such as LCD devices.

[0199] In addition, as a film-forming process, it can be, for example, CVD, PVD, forming an oxide film, a nitriding film or a combination thereof, forming a film containing metal, etc. Moreover, this embodiment can also be applied to annealing, oxidation, nitriding, diffusion and other processes.

Claims

1. A gas supply unit having a first opening portion and a second opening portion for supplying a gas to a processing chamber in which a substrate is arranged, respectively, characterized by comprising: Composed of, The first opening and the second opening are arranged in a parallel direction relative to the surface of the substrate. The gas supplied from the first opening is directed toward the center of the substrate. The gas supplied from the second opening is directed toward the periphery of the substrate. The diameter of the second opening is 0.85 to 3.3 mm relative to the diameter of the first opening. The angle formed by the direction in which the gas supplied from the second opening is directed, based on the direction in which the gas supplied from the first opening is directed, is more than 20 degrees and less than 30 degrees.

2. The gas supply unit according to claim 1, characterized in that, The area of ​​the second opening is configured such that the area of ​​the second opening is 0.7 to 11.1 times the area of ​​the first opening.

3. The gas supply unit according to claim 1, characterized in that, The first opening and the second opening are both circular.

4. The gas supply unit according to claim 1, characterized in that, The second opening is configured to have multiple openings. The flow rate of the gas supplied from the plurality of second openings, the orifice diameter of each of the plurality of second openings, and the area of ​​the plurality of second openings are the same.

5. The gas supply unit according to claim 1, characterized in that, The gas supply unit is configured such that it extends in the processing chamber in a vertical direction perpendicular to the surface of the substrate. The first opening and the second opening are located midway through the flow path for the gas to flow in the vertical direction. Gas is supplied in a direction that intersects with the direction in which the gas flows in the vertical direction.

6. The gas supply unit according to claim 5, characterized in that, At the end of the flow path of the gas flowing in the vertical direction, an outlet hole is formed to release gas other than the gas supplied to the processing chamber.

7. The gas supply unit according to claim 6, characterized in that, The configuration is such that the diameter of the discharge hole is larger than the diameter of the first opening and the diameter of the second opening, or the area of ​​the discharge hole is larger than the area of ​​the first opening and the area of ​​the second opening.

8. The gas supply unit according to claim 1, characterized in that, Multiple substrates are arranged to be loaded in the processing chamber. The first opening and the second opening are configured such that the gas is supplied between the substrate and the substrate.

9. The gas supply unit according to claim 1, characterized in that, The configuration is such that the first opening and the second opening are provided with multiple portions. The gases supplied from each of the first openings are mixed together.

10. The gas supply unit according to claim 9, characterized in that, Multiple supply piping sections having the first opening and the second opening are provided. The supply piping section is connected via a U-shaped or Y-shaped connector.

11. The gas supply unit according to claim 9, characterized in that, The first opening and the second opening are arranged on the same plane.

12. The gas supply unit according to claim 9, characterized in that, The gas supplied from each of the first openings is mixed together before reaching the substrate.

13. The gas supply unit according to claim 9, characterized in that, The gas supplied from each of the first openings is mixed together before reaching the center of the substrate.

14. A gas supply unit having a first opening portion and a second opening portion for supplying a gas to a processing chamber in which a substrate is arranged, respectively, characterized by comprising: Composed of, The first opening and the second opening are arranged in a parallel direction relative to the surface of the substrate. The gas supplied from the first opening is directed toward the center of the substrate. The gas supplied from the second opening is directed toward the periphery of the substrate. The direction of the gas supplied from the second opening is determined by a predetermined angle based on the direction of the gas supplied from the first opening. The diameter of the second opening is 0.85 to 3.3 mm relative to the diameter of the first opening. The flow rate of gas supplied from the second opening is 0.7 to 49.0 or less relative to the flow rate of gas supplied from the first opening.

15. A gas supply unit having a first opening portion and a second opening portion for supplying a gas to a processing chamber in which a substrate is arranged, respectively, characterized by comprising: Composed of, The first opening and the second opening are arranged in a parallel direction relative to the surface of the substrate. The gas supplied from the first opening is directed toward the center of the substrate. The gas supplied from the second opening is directed toward the periphery of the substrate. The direction of the gas supplied from the second opening is determined by a predetermined angle based on the direction of the gas supplied from the first opening. The flow rate of gas supplied from the second opening, the orifice diameter of the second opening, and the area of ​​the second opening are all greater than the flow rate of gas supplied from the first opening, the orifice diameter of the first opening, and the area of ​​the first opening, respectively.

16. A processing device, comprising: It includes a first gas supply unit, which is the gas supply unit according to any one of claims 1 to 15.

17. The processing apparatus according to claim 16, characterized in that, The angle formed by the direction in which the gas supplied from the second opening is directed, with reference to the direction in which the gas supplied from the first opening is directed, is determined based on the configuration relationship between the first opening and the substrate, such that the gas supplied from the second opening is supplied toward the periphery of the substrate.

18. The processing apparatus according to claim 16, characterized in that, The configuration includes multiple first gas supply units. The gases supplied from the first openings of the plurality of first gas supply units are mixed together.

19. The processing apparatus according to claim 16, characterized in that, It also includes a second gas supply unit, which is located on both sides of the first gas supply unit. The second gas supply unit is configured to supply the processing chamber with a gas different from the gas supplied from the first gas supply unit.

20. The processing apparatus according to claim 19, characterized in that, The gas supplied from the second gas supply unit has a flow rate that is less than that supplied from the first gas supply unit.

21. A method of manufacturing a semiconductor device, characterized by a process of supplying the gas to the processing chamber using the gas supply section according to any one of claims 1 to 15 to process the substrate.

22. A supply method characterized by comprising: supplying the gas to the processing chamber using the gas supply section according to any one of claims 1 to 15.

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