A terahertz frequency multiplier and a schottky diode circuit design method thereof

Abstract

The present application relates to the technical field of terahertz communication, and particularly relates to a terahertz frequency multiplier and a Schottky diode circuit design method thereof, heat simulation is performed on a Schottky diode circuit in the terahertz frequency multiplier, and based on the heat simulation result, total heat dissipation power of all diode dies of the Schottky diode circuit is obtained; for any one Schottky diode, heat bearing power of the diode die is obtained; a ratio of the total heat dissipation power and the heat bearing power is calculated and rounded up to obtain a first value; the first value is compared with a preset threshold range, and the Schottky diode circuit is designed according to a conforming threshold range. Based on the above scheme, the circuit structure of the Schottky diode in the required terahertz frequency multiplier can be quickly and more accurately determined, and from the perspective of heat effect, the problem of how to improve the circuit structure of the Schottky diode in the terahertz frequency multiplier to improve the frequency multiplication efficiency of the terahertz frequency multiplier under the driving of a larger driving power is solved.

Description

Technical Field

[0001] This invention relates to the field of terahertz communication technology, specifically to a terahertz frequency multiplier and its Schottky diode circuit design method. Background Technology

[0002] Terahertz waves are electromagnetic waves with frequencies ranging from 0.1 to 10 THz. Their spectrum lies between millimeter waves and infrared light waves, possessing characteristics of both microwaves and light waves, making terahertz technology a significant extension of research in electronics and photonics. Compared to microwaves and millimeter waves, terahertz waves have shorter wavelengths and higher frequencies; compared to light waves, they have stronger penetrating power and lower photon energy. These unique and superior characteristics give terahertz waves enormous application potential, with wide applications in radio astronomy, terahertz communication, atmospheric and environmental monitoring, radar imaging, homeland security and counter-terrorism, and medical diagnostics. In the past two or three decades, with the continuous advancement of terahertz-band semiconductor devices, radiation sources, detectors, and systems, terahertz technology has become a highly active frontier discipline with significant influence on modern science and technology and national defense, and has significant application value for the national economy and national security.

[0003] With the continuous maturation of millimeter-wave terahertz solid-state circuit technology, the local oscillator drive power of terahertz frequency multipliers has also reached the watt level. In order to achieve good frequency multiplication efficiency, it is necessary to improve the performance of terahertz frequency multipliers.

[0004] With the increase in driving power, the thermal carrying capacity of Schottky diode chips is becoming increasingly larger, and the thermal effect is often ignored in current terahertz circuit research. Summary of the Invention

[0005] The technical problem to be solved by this application is to provide a terahertz frequency multiplier and its Schottky diode circuit design method, which has the characteristics of better improving the performance of the terahertz frequency multiplier.

[0006] In a first aspect, one embodiment provides a method for designing a Schottky diode circuit in a terahertz frequency multiplier, wherein the terahertz frequency multiplier includes at least one Schottky diode, and the method includes:

[0007] Thermal simulation was performed on the Schottky diode circuit in the terahertz frequency multiplier. Based on the thermal simulation results, the total heat dissipation power of all diode chips in the Schottky diode circuit was obtained. Here, heat dissipation power refers to the heat dissipation power of the diode chip measured under a certain driving power in the thermal simulation.

[0008] For any Schottky diode, obtain the heat-carrying power of the diode die. The heat-carrying power refers to the heat-carrying capacity of the diode die itself, which is determined based on the material properties and dimensions of the diode die.

[0009] Calculate the ratio of the total heat dissipation power to the heat load power and round it up to obtain the first value;

[0010] The first value is compared with a preset threshold range, and the Schottky diode circuit is designed according to the threshold range that meets the requirements.

[0011] In one embodiment, the step of comparing a first value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes:

[0012] Determine whether the first value is less than the first threshold. If so, connect the first number of Schottky diodes in series in the terahertz frequency multiplier to form the Schottky diode circuit in the terahertz frequency multiplier.

[0013] In one embodiment, the step of comparing a first value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes:

[0014] Determine whether the first value is greater than or equal to the first threshold. If so, connect the first number of Schottky diodes in parallel in the terahertz frequency multiplier.

[0015] In one embodiment, determining whether the first value is greater than or equal to a first threshold, and if so, connecting a Schottky diode of the first numerical value in parallel in the terahertz frequency multiplier, includes:

[0016] Determine whether the first value is greater than or equal to the first threshold and less than the second threshold. If so, connect the first number of Schottky diodes in reverse parallel in the terahertz frequency multiplier.

[0017] The second threshold is greater than the first threshold.

[0018] In one embodiment, determining whether the first value is greater than or equal to a first threshold, and if so, connecting a Schottky diode of the first numerical value in parallel in the terahertz frequency multiplier, includes:

[0019] Determine whether the first value is greater than the second threshold. If so, connect the first number of Schottky diodes in parallel in the same direction in the terahertz frequency multiplier.

[0020] The second threshold is greater than the first threshold.

[0021] In one embodiment, the step of comparing a first value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes:

[0022] Determine if the first value is less than the first threshold. If it is, connect the number of Schottky diodes corresponding to the first value in series in the terahertz frequency multiplier to form the Schottky diode circuit in the terahertz frequency multiplier. If not, proceed to the next step.

[0023] Determine whether the first value is greater than or equal to the first threshold and less than or equal to the second threshold. If yes, connect the first number of Schottky diodes in reverse parallel in the terahertz frequency multiplier; if no, connect the first number of Schottky diodes in parallel in the same direction in the terahertz frequency multiplier.

[0024] The first threshold is less than the second threshold.

[0025] In one embodiment, the first threshold is 4, and / or the second threshold is 6.

[0026] In one embodiment, the method further includes:

[0027] The terahertz frequency multiplier is simulated to obtain its frequency multiplication efficiency. Based on the frequency multiplication efficiency, the doping concentration of the depletion layer of the diode die and / or the semiconductor material of the diode die are determined.

[0028] Secondly, one embodiment provides a terahertz frequency multiplier, including a Schottky diode circuit, the structure of which is based on any of the above-mentioned design methods.

[0029] Thirdly, in one embodiment, a computer-readable storage medium is provided, the medium storing a program that can be loaded and executed by a processor to implement the circuit design method described above.

[0030] The beneficial effects of this application are:

[0031] On the one hand, this application proposes a novel approach that uses the relationship between heat dissipation power and heat carrying power to guide the determination of the Schottky diode circuit structure in a terahertz frequency multiplier. This addresses the problem of improving the frequency multiplication efficiency of the terahertz frequency multiplier by modifying the circuit structure of the Schottky diode under high drive power from a thermal perspective. On the other hand, the method of obtaining heat dissipation power based on thermal simulation allows for the rapid determination of relevant parameters using software. Therefore, the required circuit structure of the Schottky diode in the terahertz frequency multiplier can be determined quickly and more accurately, leading to better performance improvements and thus enhanced frequency multiplication efficiency. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the principle of a parallel-connected Schottky diode tripler circuit in a terahertz frequency multiplier according to one embodiment.

[0033] Figure 2 This is a schematic diagram of the principle of a reverse parallel tripler circuit of Schottky diodes in a terahertz frequency multiplier according to one embodiment;

[0034] Figure 3 This is a schematic flowchart of a Schottky diode circuit design method according to an embodiment of this application;

[0035] Figure 4 yes Figure 3 A flowchart illustrating the method for step S10;

[0036] Figure 5 This is a schematic diagram of an electronic model of a diode die according to an embodiment of this application;

[0037] Figure 6 This is a schematic diagram of the equivalent thermodynamic model of a diode die according to an embodiment of this application;

[0038] Figure 7 This application Figure 3 A schematic diagram of a specific method flow for one embodiment of step S40;

[0039] Figure 8 This is a schematic flowchart of a Schottky diode circuit design method according to an embodiment of this application;

[0040] Figure 9 This application Figure 8 A schematic diagram of a specific method flow for one embodiment of step S50;

[0041] Figure 10 This application Figure 8 A schematic diagram of a specific method flow for one embodiment of step S50;

[0042] Figure 11 Is it an application? Figure 8 A schematic diagram of a specific method flow for one embodiment of step S50. Detailed Implementation

[0043] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings. Similar elements in different embodiments are referred to by associated similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of this application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to this application are not shown or described in the specification. This is to avoid obscuring the core parts of this application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.

[0044] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments. At the same time, the steps or actions in the method description can be rearranged or adjusted in a manner obvious to those skilled in the art. Therefore, the various orders in the specification and drawings are only for the clear description of a particular embodiment and do not imply a necessary order, unless otherwise stated that a particular order must be followed.

[0045] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages).

[0046] To facilitate the explanation of the inventive concept of this application, the terahertz Schottky diode technology will be briefly described below.

[0047] In terahertz frequency multipliers, there are several ways to cascade Schottky diodes. Series connection is the simplest method and can generate multiple harmonics to achieve frequency multiplication. Parallel connection has some characteristics. Taking a tripler as an example, it can be divided into anti-parallel and non-anti-parallel types.

[0048] Please refer to the schematic diagram of the non-inverting parallel tripler circuit using four semiconductor Schottky diodes. Figure 1 This third harmonic multiplier circuit is an extension of a parallel single-transistor frequency multiplier, and the basic principles of both are the same. Looking from the input and output ports towards the diode, the fundamental and harmonic signals are simultaneously loaded in parallel in the same direction across the Schottky diode. This can be equivalent to a single parallel Schottky diode frequency multiplier circuit. The Schottky diode will generate all the harmonic components of the fundamental frequency, requiring a suitable matching network and output filter circuit to extract the third harmonic signal.

[0049] In a parallel-type frequency multiplier circuit, the RF signal and DC bias of the Schottky diodes are grounded together. The circuit configuration can be completed simply by placing a pair of Schottky diodes connected in reverse series on the cavity. The biasing is relatively flexible, and the circuit packaging is relatively easy. Compared to a single-tube frequency multiplier circuit, the parallel-type frequency multiplier circuit, by using multiple diodes, greatly increases the power capacity of the frequency multiplier circuit, achieving a larger output power.

[0050] The reverse parallel triplet circuit is also derived from the single-transistor frequency multiplier circuit, such as... Figure 2 As shown, in a reverse-parallel tripler circuit, the Schottky diode pairs are arranged in the same direction, perpendicular to the signal transmission direction. To ensure the consistency of the bias voltage polarity of the semiconductor Schottky diodes, the bias voltage of the circuit must be applied from one side of the Schottky diode pairs, so that all Schottky diodes are connected in series under DC bias. The fundamental and harmonic signals are both applied in reverse parallel to the Schottky diode pairs. The even-order harmonic components generated by the Schottky diode pairs will cancel each other out, while the odd-order harmonic components will reinforce each other. That is, only the odd-order harmonic components are output, while the even-order harmonic components form the circulating current in the Schottky diode pairs.

[0051] Schottky diodes are core components of terahertz frequency multipliers. For a Schottky diode, there exists a heat dissipation power and a heat carrying power. Heat dissipation power refers to the power dissipated by the diode die under a certain driving power in thermal simulation. Heat carrying power refers to the diode's heat-carrying capacity, determined based on the material properties and dimensions of the diode die. As the driving power increases, the heat carrying power of the Schottky diode die in the terahertz frequency multiplier becomes increasingly large. In current terahertz circuit research, thermal effects are often neglected.

[0052] The applicant discovered in their research that, under high-power driving conditions exceeding wattage, the frequency multiplication efficiency of a terahertz frequency multiplier decreases when the heat-carrying power of the Schottky diode die is less than its heat dissipation power. Based on the requirement for heat dissipation power, it is necessary to increase the heat-carrying power to improve the frequency multiplication efficiency of the terahertz frequency multiplier. Therefore, the applicant found in their research that the heat dissipation power and heat-carrying power can, to some extent, guide the series-parallel connection relationship and the number of Schottky diodes in a terahertz frequency multiplier.

[0053] To address the aforementioned issues, one embodiment of this application provides a Schottky diode circuit design method for a terahertz frequency multiplier. This terahertz frequency multiplier includes at least one Schottky diode. Please refer to [reference needed]. Figure 3 The design methods include:

[0054] Step S10: Perform thermal simulation on the Schottky diode circuit in the terahertz frequency multiplier, and obtain the total heat dissipation power of all diode chips in the Schottky diode circuit based on the thermal simulation results; wherein, the heat dissipation power refers to the heat dissipation power of the diode chip measured under a certain driving power in the thermal simulation.

[0055] The total heat dissipation power of a diode chip can be obtained using existing techniques. In this application, based on thermal simulation of a Schottky diode circuit, the total heat dissipation power of the diode chip can be obtained quickly without repeated experimental testing. While existing techniques exist for obtaining the heat dissipation power of a diode chip based on thermal simulation, this application provides a novel method for obtaining this power; please refer to [reference needed]. Figure 4 This includes the following steps:

[0056] Step S101: Perform electronic simulation on any Schottky diode to obtain the power dissipation of the diode chip.

[0057] Please refer to Figure 5 The provided electronic model includes an electronic current source, a charge source, and a cascaded resistor. The electronic current source is connected in series with the cascaded resistor, and the charge source is connected in parallel with the electronic current source. This model can be used to dissipate power. Figure 5 In this context, V(t) is the applied voltage, I(t) is the operating current, and Vt is the operating current. d It is the total voltage between the anode and cathode of the Schottky junction, I d (V d T anode Q is the total current between the cathode and anode. d (V d R is the total charge between the cathode and anode. s (T anode The cascade resistance between the cathode and anode is denoted as . By extracting the SPIC parameters of the Schottky diode and then building an electronic model of the Schottky diode based on these parameters, the power dissipation P of the diode die can be obtained through simulation output from this electronic model. dis .

[0058] Step S102: The dissipated power is equivalent to the equivalent current source in the thermodynamic model, and the equivalent thermal resistance is obtained by thermal simulation through the thermodynamic model.

[0059] Please refer to Figure 6 The dissipated power P obtained above dis It is equivalent to an equivalent current source in a thermodynamic model, and then the equivalent thermal resistance R is obtained through the thermodynamic model. th Among them, T anode T0 is the temperature of the anode of the terahertz Schottky diode, and T0 is the initial ambient temperature of the thermodynamic model.

[0060] Step S103: Based on the equivalent thermal resistance and the current flowing through the equivalent thermal resistance, the heat dissipation power of the diode die is obtained.

[0061] Please refer to Figure 6 Based on the relationship between power, resistance, and current, and based on the equivalent thermal resistance R... th The heat dissipation power of the diode chip is obtained by using the operating current I(t).

[0062] Step S104: Based on the heat dissipation power of each Schottky diode, the cumulative heat dissipation power of all Schottky diodes is obtained, which is used as the total heat dissipation power P1 of all diode chips in the Schottky diode circuit.

[0063] Step S20: For any Schottky diode, obtain the heat-carrying power P2 of the diode die. The heat-carrying power refers to the heat-carrying capacity of the diode die itself, which is determined based on the material properties and dimensions of the diode die.

[0064] The thermal carrying capacity of a diode die can be determined based on the material properties and dimensions of the diode die. For specific determination methods, please refer to the content recorded in "CG Perez-Moreno, J. Grajal. Physical electro-thermal model for the design of Schottky diode-based circuits[J]. IEEE Transactions on Terahertz Science and Technology, 2014, 4(5): 597-604" and "T. Kiuru, G. Chattopadhyay, TJ Reck, et al. Thermal characterization of substrate options for high-power THz multipliers over a broad temperature range[J]. IEEE Transactions on Terahertz Science and Technology, 2016, 6(2): 328-335".

[0065] Step S30: Calculate the ratio of total heat dissipation power to heat load power and round it up to obtain the first value.

[0066] The first value n is obtained by rounding up P1 / P2.

[0067] Step S40: Compare the first value with a preset threshold range, and design a Schottky diode circuit according to the threshold range that meets the requirements.

[0068] The first value is compared with the threshold range, and the series-parallel structure of the Schottky diode circuit is determined based on the threshold range that is met.

[0069] Thermal simulation can be used to calculate the heat of each diode die. Series diodes and parallel diodes in the same direction achieve the same performance, but each has its advantages and disadvantages. Series structures are simple, but adding too many diodes in series leads to excessively long, fragile, and difficult-to-manufacture series diode chips. Parallel diodes can also increase power capacity, but they require discrete diode chips, resulting in a more complex overall circuit structure.

[0070] In one embodiment, the threshold range includes a range less than a first threshold. It is determined whether the first value is less than the first threshold. If so, n Schottky diodes are connected in series in the terahertz frequency multiplier as a Schottky diode circuit in the terahertz frequency multiplier.

[0071] The applicant found in the research that when more than 3 diodes are connected in series, the series diode chip becomes too long, fragile and difficult to process. Therefore, as a specific embodiment, 4 is used as the first threshold.

[0072] In one embodiment, the threshold range includes a range greater than or equal to a first threshold. It is determined whether the first value is greater than the first threshold. If so, n Schottky diodes are connected in parallel in the terahertz frequency multiplier.

[0073] Understandably, the parallel connection of n Schottky diodes in this article does not necessarily mean that all n Schottky diodes are connected in parallel with each other. For example, when n=4, two parallel branches can be used, with two Schottky diodes connected in series in each branch, which will not be elaborated further below.

[0074] In one embodiment, for the range that is greater than or equal to the first threshold, there is also a range that is greater than or equal to the first threshold and less than the second threshold. It is determined whether the first value n is greater than or equal to the first threshold and less than the second threshold. If so, n Schottky diodes are connected in reverse parallel in the terahertz frequency multiplier.

[0075] The applicant discovered in their research that when the number of Schottky diodes is between 4 and 6, a reverse parallel structure is preferable, as this results in a lower bias voltage. Therefore, in this specific embodiment, 6 is used as the second threshold.

[0076] The applicant discovered in their research that when the number of Schottky diodes is greater than 6, a parallel connection in the same direction is preferable. Therefore, in one embodiment, for the range greater than or equal to the first threshold, which also includes the range greater than the second threshold, it is determined whether the first value n is greater than the second threshold. If so, n Schottky diodes are connected in parallel in the same direction in the terahertz frequency multiplier.

[0077] For specific embodiments, please refer to Figure 7 The Schottky diode circuit is designed based on a comparison between a first value and a preset threshold range, and the circuit conforms to the threshold range.

[0078] Step S401: Determine whether the first value is less than the first threshold. If yes, proceed to step S402; otherwise, proceed to step S403.

[0079] Step S402: Connect a first number of Schottky diodes in series in the terahertz frequency multiplier to form the Schottky diode circuit in the terahertz frequency multiplier.

[0080] Step S403: Determine whether the first value is greater than or equal to the first threshold and less than or equal to the second threshold. If yes, proceed to step S404; otherwise, proceed to step S405.

[0081] Step S404: Connect a first number of Schottky diodes in reverse parallel in the terahertz frequency multiplier.

[0082] Step S405: Connect a first number of Schottky diodes in parallel in the same direction in the terahertz frequency multiplier.

[0083] On the one hand, this application proposes a novel approach that uses the relationship between heat dissipation power and heat carrying power to guide the determination of the Schottky diode circuit structure in a terahertz frequency multiplier. This addresses the problem of improving the frequency multiplication efficiency of the terahertz frequency multiplier by modifying the circuit structure of the Schottky diode under high drive power from a thermal perspective. On the other hand, the method of obtaining heat dissipation power based on thermal simulation allows for the rapid determination of relevant parameters using software. Therefore, based on the above scheme, the required circuit structure of the Schottky diode in the terahertz frequency multiplier can be determined quickly and more accurately, thereby improving the performance of the Schottky diode and ultimately enhancing the frequency multiplication efficiency of the terahertz frequency multiplier.

[0084] To improve the performance of the Schottky diode in a terahertz frequency multiplier and thus enhance its frequency multiplication efficiency, one embodiment is described below. Figure 8 Circuit design methods also include:

[0085] Step S50: Based on the determined Schottky diode circuit, the terahertz frequency multiplier is simulated to obtain the frequency multiplication efficiency of the terahertz frequency multiplier. Based on the frequency multiplication efficiency, the doping concentration of the depletion layer of the diode die and / or the semiconductor material of the diode die are determined.

[0086] Based on the obtained frequency multiplication efficiency, it can be determined whether the frequency multiplication efficiency of the current terahertz frequency multiplier meets the frequency multiplication efficiency requirements. As those skilled in the art will understand, although an ideal frequency multiplication efficiency exists, we cannot obtain the most ideal frequency multiplication efficiency, but can only approximate a relatively ideal frequency multiplication efficiency. Therefore, the frequency multiplication efficiency requirement in this application is a relatively optimal frequency multiplication efficiency.

[0087] Obtaining the frequency doubling efficiency can guide the determination of doping concentration parameters and semiconductor material parameters. Furthermore, obtaining the frequency doubling efficiency through simulation allows for a faster determination of these parameters.

[0088] In one specific embodiment, please refer to Figure 9 The specific method steps of step S50 include:

[0089] Step S5011: Simulate the terahertz frequency multiplier based on the determined Schottky diode circuit to obtain the frequency multiplication efficiency of the terahertz frequency multiplier.

[0090] Using the current doping concentration of the diode die as the first doping concentration, the terahertz frequency multiplier is simulated to obtain the frequency multiplication efficiency of the terahertz frequency multiplier.

[0091] Step S5021: Determine whether the obtained frequency doubling efficiency meets the frequency doubling efficiency requirement. If yes, use the current doping concentration as the manufacturing doping concentration of the depletion layer of the diode die. If no, increase the doping concentration of the depletion layer of the diode die until the doping concentration meets both the requirement that the heat dissipation power of the diode die is less than the heat carrying power requirement and the frequency doubling efficiency requirement, so as to determine the manufacturing doping concentration of the depletion layer of the diode die.

[0092] Those skilled in the art will understand that, in determining whether the obtained frequency doubling efficiency meets the frequency doubling efficiency requirement, the frequency doubling efficiency requirement is a relative requirement and needs to be obtained through at least two simulations.

[0093] Based on the Schottky diode circuit determined by the above method, the heat dissipation power of the die is less than the heat carrying power. Theoretically, given a certain material, the lower the doping concentration of the depletion layer of the diode die, the higher the frequency multiplication efficiency of the applied terahertz frequency multiplier. We can improve the frequency multiplication efficiency by increasing the doping concentration of the diode die. However, the applicant found in the research that under high-power driving at watt levels and above, when the doping concentration of the Schottky diode die buffer layer in the terahertz frequency multiplier is low, especially when the heat dissipation power of the diode die is greater than the heat carrying power, the heat dissipation power of the die may exceed the heat carrying power. In this case, the frequency multiplication efficiency of the terahertz frequency multiplier applied to the diode die will actually decrease. Therefore, the doping concentration of the diode die depletion layer cannot be increased indefinitely. It is necessary to ensure that the doping concentration satisfies both the requirement that the heat dissipation power of the diode die is less than the heat carrying power and the requirement of frequency multiplication efficiency, in order to determine the manufacturing doping concentration of the diode die depletion layer.

[0094] If the frequency doubling efficiency decreases after increasing the doping concentration based on the first doping concentration, then the first doping concentration can be used as the manufacturing doping concentration of the depletion layer of the diode die to meet the frequency doubling efficiency requirement. If the frequency doubling efficiency increases, it means that the first doping concentration cannot meet the frequency doubling efficiency requirement. Therefore, the doping concentration of the depletion layer of the diode die is increased based on the first doping concentration until the doping concentration meets both the requirement that the heat dissipation power of the diode die is less than the heat carrying power requirement and the frequency doubling efficiency requirement, so as to determine the manufacturing doping concentration of the depletion layer of the diode die.

[0095] At the same doping concentration, different semiconductor materials have different heat-carrying power. For example, GaAs has the characteristics of a large bandgap, high electron mobility, and high efficiency, but its heat-carrying power is low. In contrast, the third-generation semiconductor material GaN has high heat-carrying power. Therefore, based on the actual heat dissipation power of different dies obtained from thermal simulation, the die material with high heat-carrying power can be replaced with GaN to achieve optimal operating efficiency, thus guiding the selection of semiconductor materials for different dies. Therefore, in a specific embodiment, please refer to... Figure 10 The specific method steps of step S50 include:

[0096] Step S5012: Simulate the terahertz frequency multiplier based on the determined Schottky diode circuit to obtain the frequency multiplication efficiency of the terahertz frequency multiplier.

[0097] Using the current semiconductor material of the diode die as the first semiconductor material, a terahertz frequency multiplier is simulated to obtain the frequency multiplication efficiency of the terahertz frequency multiplier.

[0098] Since higher heat-carrying power will also reduce the frequency multiplication efficiency of the terahertz frequency multiplier, the terahertz frequency multiplier based on the semiconductor material of the obtained diode die as the first semiconductor material is simulated to obtain the frequency multiplication efficiency of the terahertz frequency multiplier.

[0099] Step S5022: Determine whether the frequency doubling efficiency meets the frequency doubling efficiency requirement. If yes, use the current semiconductor material as the manufacturing material of the diode die. If no, replace the semiconductor material of the diode die with a semiconductor material with lower heat carrying power at the same doping concentration until the replaced semiconductor material satisfies both the requirement that the heat dissipation power of the diode die is less than the requirement that the heat carrying power is less than the requirement that the frequency doubling efficiency is met, so as to determine the semiconductor material of the diode die.

[0100] Those skilled in the art will understand that determining whether the obtained frequency doubling efficiency meets the frequency doubling efficiency requirement is a relative requirement, requiring at least two simulations. For example, if the first semiconductor material meets the requirement that the heat dissipation power of the diode die is less than the heat carrying power, and replacing it with a semiconductor material with lower heat carrying power results in a decrease in frequency doubling efficiency, then the first semiconductor material can be used as the semiconductor material for the diode die that meets the frequency doubling efficiency requirement. If the frequency doubling efficiency increases, it indicates that the first semiconductor material cannot meet the frequency doubling efficiency requirement. Therefore, based on the first semiconductor material, the semiconductor material of the diode die is replaced with a semiconductor material with lower heat carrying power until the semiconductor material meets both the requirement that the heat dissipation power of the diode die is less than the heat carrying power requirement and the frequency doubling efficiency requirement, thus determining the semiconductor material for manufacturing the diode die.

[0101] In one specific embodiment, please refer to Figure 11 In the specific method steps of step S50, after step S5021, the following steps are also included:

[0102] Step S5031: Increase the doping concentration of the depletion layer of the diode die and simulate the terahertz frequency multiplier to obtain the frequency multiplication efficiency of the terahertz frequency multiplier until the doping concentration satisfies both the requirement that the heat dissipation power of the diode die is less than the heat carrying power requirement and the requirement that the frequency multiplication efficiency is satisfied. The doping concentration that satisfies the two requirements is used as the manufacturing doping concentration of the depletion layer of the diode die.

[0103] Figure 11 The illustrated embodiments and Figure 10 The difference in the illustrated embodiment is that, Figure 11 In one embodiment, once a semiconductor material that meets the frequency doubling efficiency requirement is found, the doping concentration is directly increased to find a doping concentration that meets both the requirement that the heat dissipation power of the diode die is less than the heat carrying power requirement and the requirement that the frequency doubling efficiency is met.

[0104] Based on the above scheme, the depletion layer doping concentration of the Schottky diode die and / or the parameters of the semiconductor material in the required terahertz frequency multiplier can be determined quickly and more accurately, thereby improving the performance of the Schottky diode in the terahertz frequency multiplier and thus improving the frequency multiplication efficiency of the terahertz frequency multiplier.

[0105] In addition, since the doping concentration and semiconductor material of a single diode die can be determined individually, the consistency can be better guaranteed in the case of multiple diode dies, thereby making the frequency multiplication efficiency of the terahertz frequency multiplier higher.

[0106] In one embodiment, this application provides a terahertz frequency multiplier, including a Schottky diode circuit, the structure of which is obtained based on any of the above-described design methods.

[0107] In one embodiment, this application provides a computer-readable storage medium storing a program that can be executed by a processor to implement the circuit design method described above.

[0108] Those skilled in the art will understand that all or part of the functions of the various methods in the above embodiments can be implemented by hardware or by computer programs. When all or part of the functions in the above embodiments are implemented by computer programs, the program can be stored in a computer-readable storage medium, which may include: read-only memory, random access memory, disk, optical disk, hard disk, etc., and the program is executed by a computer to achieve the above functions. For example, the program can be stored in the memory of a device, and when the program in the memory is executed by the processor, all or part of the above functions can be achieved. In addition, when all or part of the functions in the above embodiments are implemented by computer programs, the program can also be stored in a server, another computer, disk, optical disk, flash drive, or external hard drive, etc., and can be downloaded or copied to the memory of a local device, or the system of the local device can be updated. When the program in the memory is executed by the processor, all or part of the functions in the above embodiments can be achieved.

[0109] The above examples illustrate the present invention only to aid in understanding it and are not intended to limit the scope of the invention. Those skilled in the art can make various simple deductions, modifications, or substitutions based on the principles of this invention.

Claims

1. A method for designing a Schottky diode circuit in a terahertz frequency multiplier, wherein the terahertz frequency multiplier includes at least one Schottky diode, characterized in that, The method includes: Thermal simulation was performed on the Schottky diode circuit in the terahertz frequency multiplier, and the total heat dissipation power of all diode chips in the Schottky diode circuit was obtained based on the thermal simulation results. Among them, heat dissipation power refers to the heat dissipation power of the diode die measured under a certain driving power in thermal simulation; For any Schottky diode, obtain the heat-carrying power of the diode die. The heat-carrying power refers to the heat-carrying capacity of the diode die itself, which is determined based on the material properties and dimensions of the diode die. Calculate the ratio of the total heat dissipation power to the heat load power and round it up to obtain the first value; The first value is compared with a preset threshold range, and the Schottky diode circuit is designed according to the threshold range that meets the requirements.

2. The method as described in claim 1, characterized in that, The process of comparing a first numerical value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes: Determine whether the first value is less than the first threshold. If so, connect the first number of Schottky diodes in series in the terahertz frequency multiplier to form the Schottky diode circuit in the terahertz frequency multiplier.

3. The method as described in claim 1, characterized in that, The process of comparing a first numerical value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes: Determine whether the first value is greater than or equal to the first threshold. If so, connect the number of Schottky diodes corresponding to the first value in parallel in the terahertz frequency multiplier.

4. The method as described in claim 3, characterized in that, The determination of whether the first value is greater than or equal to the first threshold, and if so, the parallel connection of the first number of Schottky diodes in the terahertz frequency multiplier, includes: Determine whether the first value is greater than or equal to the first threshold and less than the second threshold. If so, connect the number of Schottky diodes corresponding to the first value in reverse parallel in the terahertz frequency multiplier. The second threshold is greater than the first threshold.

5. The method as described in claim 3, characterized in that, The determination of whether the first value is greater than or equal to the first threshold, and if so, the parallel connection of the first number of Schottky diodes in the terahertz frequency multiplier, includes: Determine if the first value is greater than the second threshold. If so, connect the number of Schottky diodes equal to the first value in parallel in the same direction in the terahertz frequency multiplier. The second threshold is greater than the first threshold.

6. The method as described in claim 1, characterized in that, The process of comparing a first numerical value with a preset threshold range and designing a Schottky diode circuit based on the threshold range includes: Determine if the first value is less than the first threshold. If it is, connect the number of Schottky diodes corresponding to the first value in series in the terahertz frequency multiplier to form the Schottky diode circuit in the terahertz frequency multiplier. If not, proceed to the next step. Determine whether the first value is greater than or equal to the first threshold and less than or equal to the second threshold. If yes, then connect the number of Schottky diodes equal to the first value in reverse parallel in the terahertz frequency multiplier; if no, then connect the number of Schottky diodes equal to the first value in parallel in the same direction in the terahertz frequency multiplier. The first threshold is less than the second threshold.

7. The method as described in claim 6, characterized in that, The first threshold is 4, and / or the second threshold is 6.

8. The method as described in claim 7, characterized in that, The method further includes: Based on the established Schottky diode circuit, the terahertz frequency multiplier is simulated to obtain the frequency multiplication efficiency of the terahertz frequency multiplier. Based on the frequency multiplication efficiency, the doping concentration of the depletion layer of the diode die and / or the semiconductor material of the diode die are determined.

9. A terahertz frequency multiplier, characterized in that, The invention includes a Schottky diode circuit, the structure of which is obtained based on the design method described in any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that the medium stores a program that can be loaded and executed by a processor to implement the method as claimed in any one of claims 1 to 8.

Images