一种含镁高电子迁移率电子自旋晶体管的外延结构、制备方法和晶体管
By growing specific epitaxial structures on GaAs substrates, including ZnTe buffer layers and ZnTe blocking layers, the problem of low-temperature operation of existing electron spin devices has been solved, achieving stable and controllable magnetization characteristics and high current density at high temperatures, which is suitable for high-density data computing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHENGDU HIWAFER SEMICON CO LTD
- Filing Date
- 2023-03-13
- Publication Date
- 2026-07-17
AI Technical Summary
Existing electron spin devices operate at temperatures far below room temperature, making it difficult to meet practical application requirements. Furthermore, magnetic elements are susceptible to thermal disturbances at high temperatures, resulting in unstable magnetic properties.
An epitaxial structure was constructed on a GaAs substrate, consisting of a ZnTe buffer layer, a p-Zn70%Mg30%Te thin film layer, a ZnTe barrier layer, a (Zn90%, Cr10%)Te magnetic layer, an AlN insulating layer, and an Au voltage extraction layer. The ZnTe barrier layer prevents N atom diffusion, improves the stability of the magnetic layer, and controls the magnetization under an external electric field.
The effective operating temperature of the electron spin transistor has been increased to 110K, enhancing the device's stability and current density at high temperatures. It also enables controllable magnetization under external electric and magnetic fields, making it suitable for high-density data computation.
Smart Images
Figure CN116565014B_ABST