A novel layout design for lateral power devices with enhanced RESURF and wide slot termination structure

Abstract

This application relates to the field of semiconductor power device technology and discloses a novel layout design for a lateral power device with an enhanced RESURF and a wide-groove termination structure. It solves the problems of uneven conduction and turn-off in different regions during device turn-on and turn-off, as well as curvature effects and electric field accumulation at the edges of the interdigitated regions, which easily lead to device breakdown in existing technologies. The design includes an anode metal region, a cathode metal region, a lightly doped drift region, a RESURF doped region, a RESURF trench, and a wide-groove termination. It can alleviate the curvature effect at the layout edges, reduce electric field spikes, and improve the overall blocking voltage of the device. Through the enhanced RESURF structure and the wide-groove termination structure, the shape of the wide-groove termination is determined according to different layout structures, tightly fitting and surrounding the entire active region, effectively improving the device blocking voltage and reducing leakage current. The enhanced termination structure is located between the two electrodes, and its shape distribution is determined according to the layout design category.

Description

Technical Field

[0001] This application relates to the field of semiconductor power device technology, and in particular to a novel layout design for a lateral power device with an enhanced RESURF and wide slot termination structure. Background Technology

[0002] With the continuous development of power electronics technology, integration, intelligence, and miniaturization have become the main development directions. Intelligent power integrated circuits have emerged, integrating control circuits, drive circuits, protection circuits, and power semiconductor devices onto a single chip, thereby increasing the intelligence and integration of the system. For integrating power devices onto the same chip, lateral power devices are the most common and feasible choice.

[0003] To improve device breakdown voltage and reduce specific on-resistance, RESURF technology is widely used in lateral power devices. To further optimize the surface electric field distribution of lateral devices, a trench structure is introduced into the traditional RESURF structure, filled internally with a dielectric material with a high dielectric constant to form an enhanced RESURF structure. This introduces multiple electric field peaks, effectively suppressing surface electric field drop-off and improving the device's breakdown voltage while maintaining a low specific on-resistance. Furthermore, adding wide trench terminations around the active region of the lateral device helps improve the overall blocking voltage and reduce leakage current. To further manufacture lateral power devices with this structure, layout design for this novel structure is urgently needed.

[0004] In integrated circuit design, the layout structure of a device often becomes a key factor determining its performance. A compact and well-designed layout can increase the stability of the integrated circuit and prevent chip failure. Conversely, a poor layout structure not only leads to a huge waste of chip area but also causes latch-up effects, localized hot spots, and other problems, resulting in short chip lifespan and low yield.

[0005] For the layout of lateral power devices, an interdigitated region structure is often used, such as... Figure 1As shown, the existing lateral power device interdigitated layout structure includes an anode metal region 1, a cathode metal region 2, and a lightly doped drift region 3 between them. The lightly doped drift region 3 is the main breakdown voltage region of the device. The anode metal region 1 and the cathode metal region 2 include interdigitated regions and Pad regions (i.e., the connecting parts of the interdigitated regions). The curvature effect at the edges and corners of the interdigitated regions and the connecting parts is severe, resulting in concentrated electric fields and large electric field peaks, making them prone to breakdown. Therefore, additional device termination design is required to address this severe curvature effect, significantly increasing complexity and chip cost. The layout structure consists of a series of intersecting electrode interdigitated strips. Although this structure is widely used, its shortcomings are also very obvious. For example, in LDMOS, the polysilicon gate electrode of the interdigitated layout is relatively long, and the device exhibits uneven conduction and turn-off in different regions during turn-on and turn-off, leading to local inconsistencies in device turn-on and turn-off, which poses a threat to the stability of device operation. In addition, this layout form is monotonous and has certain deficiencies in the utilization of silicon carbide wafer area. Finally, the curvature effect caused by the edge terminals of the interdigitated region of the device leads to electric field accumulation, making the device prone to breakdown. Consideration of the curvature increases the complexity of device design and chip cost. Summary of the Invention

[0006] The purpose of this application is to overcome the problems in the prior art where the device exhibits uneven conduction and turn-off in different regions, as well as curvature effects and electric field accumulation at the edge terminals of the interdigitated region, making the device prone to breakdown. This application provides a novel layout design for a lateral power device with an enhanced RESURF and a wide slot termination structure.

[0007] Specifically, the novel layout design of a lateral power device with an enhanced RESURF and wide-groove termination structure includes an anode metal region, a cathode metal region, a lightly doped drift region, a RESURF doped region, a RESURF trench, and a wide-groove termination. The novel layout of the lateral power device is arranged in an interdigitated region shape. Both the anode metal region and the cathode metal region include interdigitated regions and Pad regions. The corners of the interdigitated regions and Pad regions are rounded. A wide-groove termination is provided on the outer side of the cathode metal region. The wide-groove termination is rectangular and its corners are rounded. Lightly doped drift regions are provided on both the outer and inner sides of the anode metal region. Multiple RESURF trenches are provided between the lightly doped drift regions. RESURF doped regions are provided on both sides of the RESURF trenches.

[0008] Optionally, the RESURF grooves are continuously distributed in strips.

[0009] Optionally, the RESURF grooves are strip-shaped dot matrix distributions of unit graphics, and the row shapes of the unit graphics include, but are not limited to, circles, ellipses, or polygons.

[0010] In the etching of the RESURF trench, the structure has both continuous and discrete designs. It can be a continuous distribution or a dot matrix distribution of unit patterns. Note that the unit patterns are not limited to rectangles, polygons, circles, etc. The existence of both continuous and discrete structures allows the device to further increase the blocking voltage and further reduce the leakage current while maintaining a low specific on-resistance.

[0011] In one possible implementation, the novel layout of the lateral power device is circular, the anode metal region is circular, and the cathode metal region has a wide slot terminal near the inner side. The wide slot terminal is annular and has symmetrical gaps on both sides. While taking advantage of the original large radius of curvature, the area of ​​the Pad area is reasonably reduced, making the arrangement more compact, occupying less area, and increasing the wafer utilization rate.

[0012] Optionally, the RESURF trenches are continuously distributed in a ring shape.

[0013] Optionally, the RESURF grooves are a ring-shaped dot matrix distribution of unit patterns, and the row shape of the unit patterns includes, but is not limited to, circles, ellipses, or polygons.

[0014] In the etching of the RESURF trench, the structure has both continuous and discrete designs. It can be a continuous distribution or a dot matrix distribution of unit patterns. Note that the unit patterns are not limited to rectangles, polygons, circles, etc. The existence of both continuous and discrete structures allows the device to further increase the blocking voltage and further reduce the leakage current while maintaining a low specific on-resistance.

[0015] In one possible implementation, the novel layout of the lateral power device is polygonal, the anode metal region is polygonal, and a wide slot terminal is provided on the outside of the cathode metal region. The wide slot terminal is polygonal, which makes the novel layout structure of the lateral power device compact, with low on-resistance, small parasitic capacitance, fast switching speed and strong current capability.

[0016] Optionally, the RESURF grooves are a continuous polymorphic distribution.

[0017] Optionally, the RESURF grooves are a multi-shaped dot matrix distribution of unit graphics, and the row shapes of the unit graphics include, but are not limited to, circles, ellipses, or polygons.

[0018] In the etching of the RESURF trench, the structure has both continuous and discrete designs. It can be a continuous distribution or a dot matrix distribution of unit patterns. Note that the unit patterns are not limited to rectangles, polygons, circles, etc. The existence of both continuous and discrete structures allows the device to further increase the blocking voltage and further reduce the leakage current while maintaining a low specific on-resistance.

[0019] This application has the following beneficial effects:

[0020] 1. Based on existing technology designs, the edges of the interdigitated area structure are rounded, and the four corners of the Pad area are also rounded to alleviate the curvature effect at the edges of the layout, reduce electric field spikes, and improve the overall blocking voltage of the device. The new circular cell layout structure, while leveraging the original advantage of a large radius of curvature, reasonably reduces the Pad area, resulting in a more compact layout, smaller footprint, and increased wafer utilization. The new polygonal cell layout structure includes triangular, square, and hexagonal structures, continuing to leverage the advantage of compact layout, and features lower specific on-resistance, smaller parasitic capacitance, faster switching speed, and stronger current capability.

[0021] 2. This application adds an enhanced RESURF structure and a wide-slot termination structure. The shape of the wide-slot termination is determined according to different layout structures. It closely fits and surrounds the entire active area, effectively improving the device blocking voltage and reducing leakage current. The enhanced termination structure is located between the two electrodes, and its shape distribution is determined according to the layout design category.

[0022] 3. This application can be applied to power device layouts such as lateral JBS and lateral MOSFETs that contain enhanced RESURF and wide slot termination structures. Attached Figure Description

[0023] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an undue limitation of this application.

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the interdigitated area layout structure of lateral power devices in the prior art;

[0026] Figure 2This is a schematic diagram of a novel interdigitated area layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 1 ;

[0027] Figure 3 yes Figure 2 A magnified view of a portion of the image;

[0028] Figure 4 This is a schematic diagram of a novel interdigitated area layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 2 ;

[0029] Figure 5 yes Figure 4 A magnified view of a portion of the image;

[0030] Figure 6 This is a schematic diagram of a novel circular cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 1 ;

[0031] Figure 7 This is a schematic diagram of a novel circular cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 2 ;

[0032] Figure 8 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 1 ;

[0033] Figure 9 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 2 ;

[0034] Figure 10 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 3 ;

[0035] Figure 11 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 4 ;

[0036] Figure 12 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 5 ;

[0037] Figure 13 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to an embodiment of this application. Figure 6 .

[0038] Figure label:

[0039] 1. Anode metal region; 2. Cathode metal region; 3. Lightly doped drift region; 4. RESURF doped region; 5. RESURF trench; 6. Wide trench end. Detailed Implementation

[0040] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0041] In the description of this application, it should be noted that the terms "upper," "lower," "inner," "outer," "top / bottom," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0042] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed," "equipped with," "sleeved / connected," "connected," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0043] In a preferred embodiment of this application, a novel layout structure for a lateral power device with an enhanced RESURF and wide-groove terminal 6 structure is disclosed, comprising an anode metal region 1, a cathode metal region 2, a lightly doped drift region 3, a RESURF doped region 4, a RESURF trench 5, and a wide-groove terminal 6. The novel layout of the lateral power device is arranged in an interdigitated region shape. Both the anode metal region 1 and the cathode metal region 2 include interdigitated regions and Pad regions. The corners of the interdigitated regions and Pad regions are rounded. A wide-groove terminal 6 is provided on the outer side of the cathode metal region 2. The wide-groove terminal 6 is rectangular and its corners are rounded. Lightly doped drift regions 3 are provided on both the outer side and the inner side of the anode metal region 1. Multiple RESURF trenches 5 are provided between the lightly doped drift regions 3. RESURF doped regions 4 are provided on both sides of each RESURF trench 5.

[0044] Figures 2-3 This is a schematic diagram of a novel interdigitated region layout structure of a lateral SBD device with an enhanced RESURF and wide trench termination structure according to an embodiment of the present invention. The novel interdigitated region layout structure of the lateral SBD device with an enhanced RESURF and wide trench termination structure includes an anode metal region 1, a cathode metal region 2, a lightly doped drift region 3, a RESURF doped region 4, a RESURF trench 5, and a wide trench termination 6. Both the anode metal region 1 and the cathode metal region 2 are composed of interdigitated regions and pad regions. The novel interdigitated region layout structure is similar to... Figure 1 The main difference between the existing lateral power device interdigitated layout structure shown is that the interdigitated area and the Pad area are rounded, and an enhanced RESURF structure and a wide slot termination structure are added.

[0045] In this embodiment, the ends of the interdigitated areas are all semi-circular, and the interdigitated areas and the connected Pad areas are smoothly transitioned by semi-circles. That is, the metal edges between the interdigitated areas of the same metal region are semi-circular. In addition, the interdigitated area of ​​one metal is located between the two interdigitated areas of another metal, and the end of the interdigitated area of ​​the metal and the metal edge between the two interdigitated areas of the other metal form a semi-circular ring area. The corners of the Pad area are no longer rectangular, but become quarter-circular arcs. Furthermore, the Pad area of ​​the anode metal region 1 is surrounded by the extended interdigitated areas at both ends of the Pad area of ​​the cathode metal region 2. At the corners of the Pad area of ​​the anode metal region 1, the extended interdigitated areas are in the shape of quarter-circular rings. Through the arc design, on the one hand, the curvature effect is alleviated, the electric field concentration is reduced, and the excessive electric field peaks are avoided, which may lead to premature local breakdown of the device. On the other hand, the anode metal region 1 completely surrounds the cathode metal region 2, increasing the current density and improving the wafer utilization rate of the device.

[0046] In this embodiment, the outermost edge of the cathode metal region 2 is the wide trench terminal 6, which improves the blocking voltage and reduces the leakage current. The RESURF doped region 4 is located in the lightly doped drift region 3, parallel to the interdigitated region and the Pad region, presenting a combination of strip and ring shapes. RESURF trenches 5 exist in the RESURF doped region 4. It should be noted that there can be multiple RESURF trenches 5. Here, only two RESURF trenches 5 are shown. In addition, the depth and width of the RESURF trenches 5 need to be determined according to the specific device parameters. In this embodiment, the RESURF trenches 5 are continuously distributed in strip shape, parallel to the RESURF doped region 4, presenting a combination of strip and ring shapes. The RESURF trenches 5 can be filled with various high dielectric constant dielectrics. This enhanced RESURF structure adjusts the surface electric field, thereby improving the blocking voltage of the device.

[0047] Figures 4-5 This is a schematic diagram of a novel interdigitated area layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel interdigitated area layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 2 The main difference in the novel interdigitated area layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure is that the RESURF trench 5 is a discrete unit pattern of strip-shaped dot matrix distribution. It should be noted that the unit pattern can be a square, polygon, or circle, etc., and the unit pattern is not limited to the circle in the embodiment. In addition, the density of the dot matrix and the area size of the unit pattern can be adjusted, and are not limited to the exact same unit circle and the exact same dot matrix density in this embodiment. The discrete dot matrix distribution of the RESURF trench 5 is the same as the continuous strip distribution, and the whole presents a strip-shaped plus ring shape.

[0048] Figure 6 This is a schematic diagram of a novel circular cell layout structure of a lateral SBD device with an enhanced RESURF and wide trench termination structure according to another embodiment of the present invention. The novel circular cell layout structure of the lateral SBD device with an enhanced RESURF and wide trench termination structure includes an anode metal region 1, a cathode metal region 2, a lightly doped drift region 3, a RESURF doped region 4, a RESURF trench 5, and a wide trench termination 6. The anode metal region 1 is an inner circle; the cathode metal region 2 is composed of left and right semicircles plus a hollowed-out circle and a ring-shaped rectangle; the lightly doped drift region 3 is located between the two electrodes; the RESURF doped region 4 is on the lightly doped drift region 3 and is ring-shaped; the RESURF trench 5 is located on the RESURF doped region 4 and is two ring-shaped structures. Figure 2 As shown in the embodiment, the number, depth, and width of the RESURF trenches 5 need to be adjusted and determined according to the specific device parameters. This embodiment is just one example. The wide trench terminal 6 is located in the cathode metal region 2, surrounding the internal anode metal region 1, lightly doped drift region 3, RESURF doped region 4, RESURF trenches 5, etc. It is not a complete ring, but has two symmetrical notches on the left and right sides to conduct current. In addition, compared with the conventional layout structure of multiple nested rings, the cathode metal region 2 in this embodiment saves a certain area space, improves the utilization rate of the device wafer, and continues to take advantage of the small curvature effect of the circular cell layout.

[0049] Figure 7 This is a schematic diagram of a novel circular cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel circular cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 6 The main difference between the novel circular cell layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure shown is that the RESURF trenches 5 are discretely distributed in a dotted pattern, unlike... Figure 4 As shown in the embodiment, the unit graphic can be a square, polygon, or circle, etc., and is not limited to the circle in the embodiment; the density of the dot matrix and the area of ​​the unit graphic can be adjusted. The discrete dot distribution and the continuous strip distribution of the RESURF groove 5 present an overall ring shape.

[0050] Figure 8 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide trench termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with an enhanced RESURF and wide trench termination structure includes an anode metal region 1, a cathode metal region 2, a lightly doped drift region 3, a RESURF doped region 4, a RESURF trench 5, and a wide trench termination 6. The anode metal region 1 is an inner triangle; the cathode metal region 2 is an outermost triangular ring; the lightly doped drift region 3 is located between the two electrodes; the RESURF doped region 4 is on the lightly doped drift region 3 and forms a triangular ring; the RESURF trench 5 is located on the RESURF doped region 4 and forms two triangular rings. Figure 2As in the illustrated embodiment, the number, depth, and width of the RESURF trenches 5 need to be adjusted and determined according to the specific device parameters. This embodiment is just one example. The wide trench terminal 6 is located at the outermost edge of the combination of multiple triangular cells and is closely attached to the edge of the cathode metal region 2. The triangular cell design increases the degree of cell attachment and improves the utilization rate of the device wafer area.

[0051] Figure 9 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 8 The main difference between the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure and the RESURF trench 5 is that the RESURF trench 5 is a discrete, dotted distribution, unlike... Figure 4 Similarly, in the illustrated embodiment, the unit graphic can be a square, polygon, or circle, etc., and is not limited to the circle in the embodiment; the density of the dot matrix and the area size of the unit graphic can be adjusted. The discrete dot-like distribution and the continuous strip distribution of the RESURF groove 5 present an overall triangular ring shape.

[0052] Figure 10 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 8 The main difference in the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide trench terminal structure shown is that the anode metal region 1 is changed to a square; the cathode metal region 2, the lightly doped drift region 3, the RESURF doped region 4, and the RESURF trench 5 are all changed to square rings, and the wide trench terminal 6 is located at the outermost periphery of the combination of multiple square cells, closely attached to the edge of the cathode metal region 2.

[0053] Figure 11 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 10 The main difference between the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure shown is that the RESURF trenches 5 are discretely distributed in a dotted pattern, unlike... Figure 4Similarly, in the illustrated embodiment, the unit graphic can be a square, polygon, circle, etc., and is not limited to the circle in the embodiment; the density of the dot matrix and the area of ​​the unit graphic can be adjusted. The discrete dot-matrix distribution of the RESURF groove 5 is the same as the continuous strip distribution, and the whole presents a square ring shape.

[0054] Figure 12 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 8 The main difference in the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide trench terminal structure is that the anode metal region 1 is changed to a hexagon; the cathode metal region 2, the lightly doped drift region 3, the RESURF doped region 4, and the RESURF trench 5 are all changed to hexagonal rings, and the wide trench terminal 6 is located at the outermost periphery of the combination of multiple hexagonal cells, closely attached to the edge of the cathode metal region 2.

[0055] Figure 13 This is a schematic diagram of a novel polygonal cell layout structure of a lateral SBD device with an enhanced RESURF and wide slot termination structure according to another embodiment of the present invention. The novel polygonal cell layout structure of the lateral SBD device with the enhanced RESURF and wide slot termination structure is... Figure 12 The main difference between the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure and the RESURF trench 5 is that the RESURF trench 5 is a discrete, dotted distribution, unlike... Figure 4 Similarly, in the illustrated embodiment, the unit graphic can be a square, polygon, circle, etc., and is not limited to the circle in the embodiment; the density of the dot matrix and the area of ​​the unit graphic can be adjusted. The discrete dot-matrix distribution of the RESURF groove 5 is the same as the continuous strip distribution, and the whole presents a hexagonal ring shape.

[0056] In the novel polygonal cell layout structure of the lateral SBD device with enhanced RESURF and wide-groove termination structure, each cell shares the cathode metal region 2 with four adjacent cells. Compared with triangular and square cell structures, hexagonal cells provide a more compact cell arrangement and a more uniform current distribution. Therefore, the hexagonal cell structure has a smaller specific on-resistance and switching speed. The buffer layer 5 can also be integrated in the hexagonal cell, and the buffer layer 5 is also located between the lightly doped drift region 3 and the drain electrode 4.

[0057] like Figures 2 to 13In the illustrated embodiments, the devices are not limited to silicon carbide devices, and the enhanced RESURF structure and wide-slot termination structure are not limited to the layout structure of the illustrated lateral SBD power device. In other embodiments, they can also be used for the layout design of lateral power PiN diodes, lateral power JBS diodes, lateral power MOSFETs, lateral power IGBTs, and other device structures. In particular, for lateral power MOSFETs, in the cell layout design, the drain electrode is located at the center of the cell, and from the inside out are the lightly doped drift region, the gate electrode, and the source electrode. Since the source electrode is located on the outermost layer, the gate electrode next to it has a large perimeter, resulting in a larger channel width for the lateral power device. This allows the device to provide a large current capability and a small specific on-resistance. The drain electrode is located at the center of the device, resulting in a small gate-drain Miller capacitance, which improves the switching frequency of the device.

[0058] The above are merely preferred embodiments of this application; however, the scope of protection of this application is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in this application, based on the technical solution and its improved concept, should be covered within the scope of protection of this application.

Claims

1. A novel layout design for a lateral power device with an enhanced RESURF and wide slot termination structure, characterized in that, The novel layout of the lateral power device includes an anode metal region, a cathode metal region, a lightly doped drift region, a RESURF doped region, a RESURF trench, and a wide trench terminal. The layout is arranged in an interdigitated region shape. Both the anode metal region and the cathode metal region include interdigitated regions and Pad regions. The corners of the interdigitated regions and Pad regions are rounded. A wide trench terminal is provided on the outer side of the cathode metal region. The wide trench terminal is rectangular and has rounded corners. Lightly doped drift regions are provided on both the outer and inner sides of the anode metal region. Multiple RESURF trenches are provided between the lightly doped drift regions. RESURF doped regions are provided on both sides of the RESURF trench. The RESURF trench is filled with a variety of high dielectric constant media; The RESURF trenches are distributed in a strip-shaped dot matrix pattern, a ring-shaped dot matrix pattern, or a polygonal dot matrix pattern.

2. The novel layout design of the lateral power device with enhanced RESURF and wide slot termination structure according to claim 1, characterized in that, The novel layout of the lateral power device is circular, the anode metal region is circular, and the cathode metal region has a wide slot terminal near the inner side. The wide slot terminal is annular and has symmetrical gaps on both sides.

3. The novel layout design of the lateral power device with enhanced RESURF and wide slot termination structure according to claim 1, characterized in that, The novel layout of the lateral power device is polygonal, the anode metal region is polygonal, and a wide slot terminal is provided on the outside of the cathode metal region, the wide slot terminal being polygonal.

4. A novel layout design for a lateral power device with an enhanced RESURF and wide slot termination structure according to any one of claims 1-3, characterized in that, The shape of the unit graphic includes, but is not limited to, a circle, an ellipse, or a polygon.

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