Light emitting diode epitaxial wafer and preparation method thereof, and light emitting diode

Abstract

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof. The light emitting diode epitaxial wafer comprises a substrate, a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially stacked on the substrate. The multi-quantum well layer comprises a first multi-quantum well layer and a second multi-quantum well layer which is stacked on the first multi-quantum well layer. The first multi-quantum well layer is a periodic structure formed by alternately stacking a first quantum well layer and a first composite quantum barrier layer. The first composite quantum barrier layer comprises Lu-doped GaN sub-layers and Mg-doped GaN sub-layers which are sequentially stacked. The second multi-quantum well layer is a periodic structure formed by alternately stacking a second quantum well layer and a second composite quantum barrier layer. The second composite quantum barrier layer comprises B-doped GaN sub-layers and Si-doped GaN sub-layers which are sequentially stacked. The light emitting diode prepared by the method has high light emitting efficiency and anti-static ability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a light-emitting diode epitaxial wafer and its fabrication method, and a light-emitting diode. Background Technology

[0002] The multiple quantum well layer, as the active region, is the core structure of a light-emitting diode (LED). Traditional multiple quantum well layers consist of periodically stacked InGaN potential well layers and GaN quantum barrier layers. However, the traditional multiple quantum well layer structure suffers from the following problems: (1) low hole mobility coupled with the difficulty in activating holes results in insufficient holes in the region near the N-type semiconductor layer; (2) low InGaN growth temperature leads to poor lattice quality, causing defect accumulation after periodic stacking and the formation of non-radiative recombination centers; (3) excessively high electron mobility, making it easy for electrons to overflow into the P-type semiconductor layer. These problems severely affect the luminous efficiency and antistatic capability of LEDs. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide an epitaxial wafer for light-emitting diodes that can improve the luminous efficiency and antistatic capability of light-emitting diodes.

[0004] The technical problem to be solved by the present invention is to provide a method for preparing an epitaxial wafer of a light-emitting diode, which is simple in process and produces an epitaxial wafer of a light-emitting diode with high luminous efficiency.

[0005] To achieve the above-mentioned technical effects, the present invention provides a light-emitting diode epitaxial wafer, comprising a substrate, and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate;

[0006] The multi-quantum well layer includes a first multi-quantum well layer and a second multi-quantum well layer stacked on the first multi-quantum well layer;

[0007] The first multi-quantum-well layer is a periodic structure formed by alternating stacking of a first quantum well layer and a first composite quantum barrier layer. The first composite quantum barrier layer includes Lu-doped GaN sublayers and Mg-doped GaN sublayers stacked sequentially.

[0008] The second multiple quantum well layer is a periodic structure formed by alternating stacking of a second quantum well layer and a second composite quantum barrier layer. The second composite quantum barrier layer includes sequentially stacked B-doped GaN sublayers and Si-doped GaN sublayers.

[0009] As an improvement to the above technical solution, the first composite quantum barrier layer is a periodic structure formed by alternating stacking of Lu-doped GaN sublayers and Mg-doped GaN sublayers, with a period number of 5-15.

[0010] The thickness of the Lu-doped GaN sublayer is 0.5-1 nm; the thickness of the Mg-doped GaN sublayer is 0.5-1 nm.

[0011] As an improvement to the above technical solution, the second composite quantum barrier layer is a periodic structure formed by alternating stacking of B-doped GaN sublayers and Si-doped GaN sublayers, with a period number of 5-15.

[0012] The thickness of the B-doped GaN sublayer is 0.1-1 nm; the thickness of the Si-doped GaN sublayer is 0.1-1 nm.

[0013] As an improvement to the above technical solution, the doping concentration of the Lu-doped GaN sublayer is 1×10⁻⁶. 14 -1×10 16 cm -3 The doping concentration of the Mg-doped GaN sublayer is 1×10⁻⁶. 14 -1×10 16 cm -3 The doping concentration of the B-doped GaN sublayer is 1×10⁻⁶. 14 -1×10 16 cm -3 The doping concentration of the Si-doped GaN sublayer is 1×10⁻⁶. 15 -1×10 17 cm -3 .

[0014] As an improvement to the above technical solution, the thickness of the first quantum well layer and the second quantum well layer is 3-7 nm; the number of periods of the first multi-quantum well layer is 2-8; and the number of periods of the second multi-quantum well layer is 2-8.

[0015] As an improvement to the above technical solution, the electron blocking layer is a periodic structure formed by alternating AlGaN and InGaN layers, with a period number of 3-15; the thickness of the electron blocking layer is 15-50 nm.

[0016] Accordingly, the present invention also discloses a method for preparing a light-emitting diode epitaxial wafer, for preparing the above-mentioned light-emitting diode epitaxial wafer, comprising:

[0017] A substrate is provided on which a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer are sequentially grown.

[0018] The multi-quantum well layer includes a first multi-quantum well layer and a second multi-quantum well layer stacked on the first multi-quantum well layer;

[0019] The first multi-quantum-well layer is a periodic structure formed by alternating stacking of a first quantum well layer and a first composite quantum barrier layer. The first composite quantum barrier layer includes Lu-doped GaN sublayers and Mg-doped GaN sublayers stacked sequentially.

[0020] The second multiple quantum well layer is a periodic structure formed by alternating stacking of a second quantum well layer and a second composite quantum barrier layer. The second composite quantum barrier layer includes sequentially stacked B-doped GaN sublayers and Si-doped GaN sublayers.

[0021] As an improvement to the above technical solution, the growth pressure of the first composite quantum barrier layer is 100-500 Torr, and the growth temperature is 800-900℃.

[0022] The growth pressure of the second composite quantum barrier layer is 100-500 Torr, and the growth temperature is 800-900℃;

[0023] The growth pressure of the quantum well layer is 100-500 Torr, and the growth temperature is 700-800℃.

[0024] As an improvement to the above technical solution, the growth pressure of the electron blocking layer is 100-500 Torr, and the growth temperature is 900-1000℃.

[0025] Accordingly, the present invention also discloses a light-emitting diode, including the above-mentioned light-emitting diode epitaxial wafer.

[0026] Implementing the embodiments of the present invention has the following beneficial effects:

[0027] (1) The light-emitting diode epitaxial wafer provided by the present invention comprises a Lu-doped GaN sublayer and a Mg-doped GaN sublayer in the first composite quantum barrier layer. After Lu doping GaN, shallow energy level impurities are induced, causing the conduction band to shift to a lower energy direction and the valence band to shift upward, which is beneficial for hole injection; the addition of Mg can generate holes. Both Lu and Mg doping are beneficial to increasing the hole concentration in the first multi-quantum-well layer, thereby improving the luminous efficiency.

[0028] The second composite quantum barrier layer comprises a boron-doped GaN sublayer and a silicon-doped GaN sublayer. Boron-doped GaN has a higher energy level, which blocks electrons and reduces electron mobility. Furthermore, the small size of boron atoms allows them to act as filler atoms, reducing vacancy defects and improving the lattice quality of the second quantum well layer. Si atoms increase electron spreadability, preventing electron beam overflow caused by poor electron spread. The doping of boron and silicon alleviates electron overflow in the second quantum well layer and mitigates defect accumulation caused by sustained low temperatures, thereby improving luminous efficiency and antistatic properties.

[0029] (2) The light-emitting diode epitaxial wafer provided by the present invention has a first composite quantum barrier layer and a second composite quantum barrier layer, both of which are periodic structures with alternating stacking, which can further increase the carrier concentration in the multi-quantum well layer, thereby improving the luminous efficiency.

[0030] (3) The second quantum well layer of the light-emitting diode epitaxial wafer provided by the present invention has an electron blocking effect, so the thickness of the electron blocking layer can be reduced accordingly, thereby reducing the blocking effect on holes and avoiding light absorption by the electron blocking layer, thus further improving the luminous efficiency. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of the light-emitting diode epitaxial wafer in Embodiment 1 of the present invention;

[0032] Figure 2 This is a schematic diagram of the structure of the first multi-quantum well layer in Embodiment 1 of the present invention;

[0033] Figure 3 This is a schematic diagram of the structure of the second multi-quantum well layer in Embodiment 1 of the present invention;

[0034] Figure 4 This is a schematic diagram of the structure of the first composite quantum barrier layer in Embodiment 4 of the present invention;

[0035] Figure 5 This is a schematic diagram of the structure of the second composite quantum barrier layer in Embodiment 4 of the present invention;

[0036] Figure 6 This is a flowchart of the method for preparing the epitaxial wafer of a light-emitting diode in Embodiment 1 of the present invention. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments.

[0038] like Figure 1 As shown, this embodiment of the invention provides a light-emitting diode epitaxial wafer, including a substrate 1, and a nucleation layer 2, an intrinsic GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6, and a P-type GaN layer 7 sequentially stacked on the substrate 1. The multiple quantum well layer 5 includes a first multiple quantum well layer 51 and a second multiple quantum well layer 52 stacked on the first multiple quantum well layer 51.

[0039] The first multiple quantum well layer 51 is a periodic structure formed by alternating layers of a first quantum well layer 511 and a first composite quantum barrier layer 512. The first composite quantum barrier layer 512 includes a Lu-doped GaN sublayer 5121 and a Mg-doped GaN sublayer 5122 stacked sequentially. Lu doping of GaN induces shallow-level impurities, causing the conduction band to shift towards lower energies and the valence band to shift upwards, thus facilitating hole injection and alleviating the problem of insufficient holes in the multiple quantum wells. The addition of Mg can generate holes and also helps increase the hole concentration in the first multiple quantum well layer 51 near the N-type GaN layer.

[0040] The second multiple quantum well layer 52 is a periodic structure formed by alternating layers of a second quantum well layer 521 and a second composite quantum barrier layer 522. The second composite quantum barrier layer 522 includes sequentially stacked B-doped GaN sublayers 5221 and Si-doped GaN sublayers 5222. The higher energy level of the B-doped GaN material impedes electron flow, reducing electron mobility and significantly mitigating electron overflow. Furthermore, the relatively small size of B atoms allows them to act as filler atoms, reducing vacancy defects and improving the lattice quality of the second multiple quantum well layer 52. This avoids the continuous accumulation of defects and deterioration of lattice quality that occurs when the second multiple quantum well layer 52 grows near the P-type layer due to the continuous low-temperature growth of traditional multiple quantum well layers, leading to non-radiative recombination, decreased luminous efficiency, and reduced device electrostatic discharge capability. Si atoms increase electron spread, preventing electron beam overflow to the P-type layer due to poor electron spread and increasing electron-hole recombination in the second multiple quantum well layer 52 near the P-type layer.

[0041] Preferably, the first composite quantum barrier layer 512 is a periodic structure formed by alternating stacking of Lu-doped GaN sublayers 5121 and Mg-doped GaN sublayers 5122, with a period number of 5-15; the thickness of the Lu-doped GaN sublayer 5121 is 0.5-1 nm; and the thickness of the Mg-doped GaN sublayer 5122 is 0.5-1 nm.

[0042] The second composite quantum barrier layer 522 is a periodic structure formed by alternating layers of B-doped GaN sublayer 5221 and Si-doped GaN sublayer 5222, with a period number of 5-15; the thickness of the B-doped GaN sublayer 5221 is 0.1-1 nm; the thickness of the Si-doped GaN sublayer 5222 is 0.1-1 nm.

[0043] Preferably, when the first composite quantum barrier layer is an alternating stacked periodic structure, the hole concentration of the first multi-quantum well layer can be further increased, thereby improving the luminescence efficiency; when the second composite quantum barrier layer is an alternating stacked periodic structure, the electron mobility and defect accumulation in the second multi-quantum well layer can be further reduced, thereby improving the luminescence efficiency and antistatic capability.

[0044] The doping concentration of the Lu-doped GaN sublayer 5121 is 1×10⁻⁶. 14 -1×10 16 cm -3 If the doping concentration of the Lu-doped GaN sublayer 5121 is < 1 × 10⁻⁶ 14 cm -3 The number of holes that can be injected is relatively small. If the doping concentration of the Lu-doped GaN sublayer 5121 is >1×10⁻⁶, the maximum number of holes that can be injected is relatively small. 16 cm -3 Defects are easily formed; the doping concentration of the Mg-doped GaN sublayer 5122 is 1×10⁻⁶. 14 -1×10 16 cm -3 If the doping concentration of the Mg-doped GaN sublayer 5122 is < 1 × 10⁻⁶ 14 cm -3 The number of holes generated is relatively small. If the doping concentration of the Mg-doped GaN sublayer 5122 is >1×10⁻⁶, the number of holes generated is relatively small. 16 cm -3 This will result in too many defects; the doping concentration of the B-doped GaN sublayer 5221 is 1×10⁻⁶. 14 -1×10 16 cm -3 If the doping concentration of the B-doped GaN sublayer 5221 is < 1 × 10⁻⁶ 14 cm -3 It has a relatively small blocking effect on electrons. If the doping concentration of the B-doped GaN sublayer 5221 is >1×10 16 cm -3 This will affect the filling effect on defects; the doping concentration of the Si-doped GaN sublayer 5222 is 1×10⁻⁶. 15 -1×10 17 cm -3 If the doping concentration of the Si-doped GaN sublayer 5222 is < 1 × 10 14 cm -3 It is difficult to generate enough electrons if the doping concentration of the Si-doped GaN sublayer 5222 is >1×10⁻⁶. 16 cm -3 This will cause the defects to increase further.

[0045] The first quantum well layer 511 and the second quantum well layer 521 are InGaN layers, and the thickness of the first quantum well layer 511 and the second quantum well layer 521 is 3-7 nm. The number of periods of the first quantum well layer 51 is 2-8. The number of periods of the second quantum well layer 52 is 2-8.

[0046] Since the second quantum well layer 52 has a certain electron blocking effect, the thickness of the electron blocking layer 6 can be reduced, thereby reducing the blocking effect on holes and avoiding light absorption by the electron blocking layer 6, further improving the luminous efficiency. Specifically, the electron blocking layer 6 is a periodic structure formed by alternating AlGaN and InGaN layers, with a period number of 3-15, and the thickness of the InGaN layer is 2-8 nm, and the thickness of the AlGaN layer is 2-8 nm.

[0047] In addition, the substrate 1 can be a sapphire substrate.

[0048] The nucleation layer 2 is an AlGaN layer or an AlN layer, and the thickness of the nucleation layer 2 is 20-100 nm.

[0049] The thickness of the intrinsic GaN layer 3 is 300-800 nm.

[0050] The N-type GaN layer 4 can be Si-doped, with a Si doping concentration of 5 × 10⁴. 18 -1×10 19 cm -3 The thickness of the N-type GaN layer 4 is 1-3 μm.

[0051] The p-type GaN layer 7 can be Mg-doped, with a Mg doping concentration of 5 × 10⁻⁶. 17 -1×10 20 cm -3 The thickness of the P-type GaN layer 7 is 5-60 nm.

[0052] like Figure 2 As shown, this invention also discloses a method for fabricating a light-emitting diode epitaxial wafer, comprising the following steps:

[0053] S100 provides a substrate

[0054] A sapphire substrate is selected, and the reaction chamber temperature is controlled at 1000-1200℃ and the pressure at 200-600 Torr. The sapphire substrate is subjected to high-temperature annealing for 5-8 minutes in an H2 atmosphere to clean the particles and oxides on the surface of the sapphire substrate.

[0055] S200 nucleation layer

[0056] The nucleation layer can be made of AlGaN or AlN.

[0057] The reaction chamber temperature is controlled at 500-700℃ and the pressure at 200-400 Torr. NH3 is introduced as the N source, N2 and H2 are introduced as the carrier gas, TMGa is introduced as the Ga source, and TMAl is introduced as the Al source.

[0058] S300 intrinsic GaN layer growth

[0059] The reaction chamber temperature is controlled at 1100-1150℃, the pressure at 100-500 Torr, NH3 is introduced as the N source, N2 and H2 are introduced as the carrier gas, and TMGa is introduced as the Ga source.

[0060] S400 growth of N-type GaN layer

[0061] The reaction chamber temperature is controlled at 1100-1150℃, the pressure at 100-500 Torr, NH3 is introduced as the N source, N2 and H2 are introduced as the carrier gas, TMGa is introduced as the Ga source, and SiH4 is introduced as the doping source.

[0062] S500 grows the first multiple quantum well layer

[0063] The reaction chamber temperature was controlled at 700-800℃ and the pressure at 100-500 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0064] The reaction chamber temperature is controlled at 800-900℃ and the pressure at 100-500 Torr. NH3 is introduced as the N source, N2 or H2 is introduced as the carrier gas, TEGa is introduced as the Ga source, and Lu(TMHD)3 is introduced as the doping source to grow Lu-doped GaN sublayer.

[0065] The reaction chamber temperature is controlled at 800-900℃ and the pressure at 100-500 Torr. NH3 is introduced as the N source, N2 or H2 is introduced as the carrier gas, TEGa is introduced as the Ga source, and CP2Mg is introduced as the doping source to grow a Mg-doped GaN sublayer.

[0066] Quantum well layers, Lu-doped GaN sublayers, and Mg-doped GaN sublayers are periodically grown by repeated stacking.

[0067] S600 grows a second quantum well layer

[0068] The reaction chamber temperature was controlled at 700-800℃ and the pressure at 100-500 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0069] The reaction chamber temperature was controlled at 800-900℃, and the pressure at 100-500 Torr. NH3 was introduced as the N source, N2 or H2 as the carrier gas, TEGa was introduced as the Ga source, and C6H was introduced. 15 B is used as the doping source to grow a B-doped GaN sublayer.

[0070] The reaction chamber temperature is controlled at 800-900℃ and the pressure at 100-500 Torr. NH3 is introduced as the N source, N2 or H2 is introduced as the carrier gas, TEGa is introduced as the Ga source, and SiH4 is introduced as the doping source to grow a Si-doped GaN sublayer.

[0071] The quantum well layer, B-doped GaN sublayer, and Si-doped GaN sublayer are periodically grown by repeated stacking.

[0072] S700 growth electron barrier layer

[0073] The reaction chamber temperature was controlled at 900-1000℃ and the pressure at 100-500 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source to grow an AlGaN layer.

[0074] The reaction chamber temperature was controlled at 900-1000℃ and the pressure at 100-500 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMIn was introduced as the In source to grow the InGaN layer.

[0075] AlGaN and InGaN layers are grown periodically by repeated stacking.

[0076] S800 growth of P-type GaN layer

[0077] The reaction chamber temperature is controlled at 800-1000℃, the pressure at 100-300 Torr, NH3 is introduced as the N source, TMGa is introduced as the Ga source, and CP2Mg is introduced as the doping source.

[0078] The present invention will be further illustrated below with specific embodiments.

[0079] Example 1

[0080] This embodiment provides a light-emitting diode epitaxial wafer, including a substrate and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate;

[0081] The substrate is a sapphire substrate.

[0082] The nucleation layer is an AlGaN layer with a thickness of 30 nm.

[0083] The thickness of the intrinsic GaN layer is 400 nm.

[0084] The Si doping concentration in the N-type GaN layer is 7 × 10⁻⁶. 18 cm -3 The thickness is 2μm.

[0085] The multiple quantum well layer comprises a first multiple quantum well layer and a second multiple quantum well layer stacked sequentially. The first multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a first composite quantum barrier layer, with a period number of 5 and a thickness of 3 nm. The first composite quantum barrier layer comprises a Lu-doped GaN sublayer and a Mg-doped GaN sublayer stacked sequentially, with the Lu-doped GaN sublayer having a doping concentration of 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Mg-doped GaN sublayer is 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm.

[0086] The second multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a second composite quantum barrier layer, with a period number of 5. The InGaN quantum well layer has a thickness of 3 nm. The second composite quantum barrier layer comprises sequentially stacked B-doped GaN sublayers and Si-doped GaN sublayers, with the B-doped GaN sublayer having a doping concentration of 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Si-doped GaN sublayer is 1 × 10⁻⁶. 16 cm -3 The thickness is 1 nm.

[0087] The electron blocking layer is a periodic structure with alternating AlGaN and InGaN layers, with 3 periods. The thickness of each AlGaN layer is 3 nm, the thickness of each InGaN layer is 3 nm, and the thickness of the electron blocking layer is 18 nm.

[0088] The Mg doping concentration in the p-type GaN layer is 5 × 10⁻⁶. 19 cm -3 The thickness is 10nm.

[0089] The above-mentioned method for fabricating an epitaxial wafer of a light-emitting diode includes the following steps:

[0090] S100 provides a substrate

[0091] A sapphire substrate was selected, and the reaction chamber temperature was controlled at 1000℃ and the pressure at 400 Torr. The sapphire substrate was subjected to high-temperature annealing for 6 minutes in an H2 atmosphere.

[0092] S200 nucleation layer

[0093] The reaction chamber temperature was controlled at 600℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source.

[0094] S300 intrinsic GaN layer growth

[0095] The reaction chamber temperature was controlled at 1100℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, and TMGa was introduced as the Ga source.

[0096] S400 growth of N-type GaN layer

[0097] The reaction chamber temperature was controlled at 1120℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and SiH4 was introduced as the doping source.

[0098] S500 grows the first multiple quantum well layer

[0099] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0100] The reaction chamber temperature was controlled at 850℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and Lu(TMHD)3 as the doping source to grow a Lu-doped GaN sublayer.

[0101] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and CP2Mg as the doping source to grow a Mg-doped GaN sublayer.

[0102] Quantum well layers, Lu-doped GaN sublayers, and Mg-doped GaN sublayers are periodically grown by repeated stacking.

[0103] S600 grows a second quantum well layer

[0104] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0105] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa was introduced as the Ga source, and C6H was introduced. 15 B is used as the doping source to grow a B-doped GaN sublayer.

[0106] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and SiH4 as the doping source to grow a Si-doped GaN sublayer.

[0107] The quantum well layer, B-doped GaN sublayer, and Si-doped GaN sublayer are periodically grown by repeated stacking.

[0108] S700 growth electron barrier layer

[0109] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source to grow an AlGaN layer.

[0110] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMIn was introduced as the In source to grow an InGaN layer.

[0111] AlGaN and InGaN layers are grown periodically by repeated stacking.

[0112] S800 growth of P-type GaN layer

[0113] The reaction chamber temperature was controlled at 900℃ and the pressure at 200 Torr. NH3 was introduced as the N source, TMGa was introduced as the Ga source, and CP2Mg was introduced as the doping source.

[0114] Example 2

[0115] This embodiment provides a light-emitting diode epitaxial wafer, including a substrate and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate;

[0116] The substrate is a sapphire substrate.

[0117] The nucleation layer is an AlGaN layer with a thickness of 30 nm.

[0118] The thickness of the intrinsic GaN layer is 400 nm.

[0119] The Si doping concentration in the N-type GaN layer is 7 × 10⁻⁶. 18 cm -3 The thickness is 2μm.

[0120] The multi-quantum-well layer comprises a first multi-quantum-well layer and a second multi-quantum-well layer stacked sequentially. The first multi-quantum-well layer is a periodic structure consisting of alternating InGaN quantum well layers and a first composite quantum barrier layer, with a period number of 5 and a thickness of 3 nm for the InGaN quantum well layers. The first composite quantum barrier layer is a periodic structure consisting of alternating Lu-doped GaN sublayers and Mg-doped GaN sublayers, with a period number of 5 and a doping concentration of 1 × 10⁻⁶ for the Lu-doped GaN sublayers. 15 cm -3The thickness is 1 nm, and the doping concentration of the Mg-doped GaN sublayer is 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm.

[0121] The second multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a second composite quantum barrier layer, with a period number of 5. The InGaN quantum well layer has a thickness of 3 nm. The second composite quantum barrier layer comprises sequentially stacked B-doped GaN sublayers and Si-doped GaN sublayers, with the B-doped GaN sublayer having a doping concentration of 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Si-doped GaN sublayer is 1 × 10⁻⁶. 16 cm -3 The thickness is 1 nm.

[0122] The electron blocking layer is a periodic structure with alternating AlGaN and InGaN layers, with 3 periods. The thickness of each AlGaN layer is 3 nm, the thickness of each InGaN layer is 3 nm, and the thickness of the electron blocking layer is 18 nm.

[0123] The Mg doping concentration in the p-type GaN layer is 5 × 10⁻⁶. 19 cm -3 The thickness is 10nm.

[0124] The above-mentioned method for fabricating an epitaxial wafer of a light-emitting diode includes the following steps:

[0125] S100 provides a substrate

[0126] A sapphire substrate was selected, and the reaction chamber temperature was controlled at 1000℃ and the pressure at 400 Torr. The sapphire substrate was subjected to high-temperature annealing for 6 minutes in an H2 atmosphere.

[0127] S200 nucleation layer

[0128] The reaction chamber temperature was controlled at 600℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source.

[0129] S300 intrinsic GaN layer growth

[0130] The reaction chamber temperature was controlled at 1100℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, and TMGa was introduced as the Ga source.

[0131] S400 growth of N-type GaN layer

[0132] The reaction chamber temperature was controlled at 1120℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and SiH4 was introduced as the doping source.

[0133] S500 grows the first multiple quantum well layer

[0134] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0135] The reaction chamber temperature was controlled at 850℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and Lu(TMHD)3 as the doping source to grow a Lu-doped GaN sublayer.

[0136] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and CP2Mg as the doping source to grow a Mg-doped GaN sublayer.

[0137] The first composite quantum barrier layer is formed by repeatedly stacking and periodically growing Lu-doped GaN sublayers and Mg-doped GaN sublayers; the quantum well layer and the first composite quantum barrier layer are also repeatedly stacked and periodically grown.

[0138] S600 grows a second quantum well layer

[0139] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0140] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa was introduced as the Ga source, and C6H was introduced. 15 B is used as the doping source to grow a B-doped GaN sublayer.

[0141] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and SiH4 as the doping source to grow a Si-doped GaN sublayer.

[0142] The quantum well layer, B-doped GaN sublayer, and Si-doped GaN sublayer are periodically grown by repeated stacking.

[0143] S700 growth electron barrier layer

[0144] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source to grow an AlGaN layer.

[0145] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMIn was introduced as the In source to grow an InGaN layer.

[0146] AlGaN and InGaN layers are grown periodically by repeated stacking.

[0147] S800 growth of P-type GaN layer

[0148] The reaction chamber temperature was controlled at 900℃ and the pressure at 200 Torr. NH3 was introduced as the N source, TMGa was introduced as the Ga source, and CP2Mg was introduced as the doping source.

[0149] Example 3

[0150] This embodiment provides a light-emitting diode epitaxial wafer, including a substrate and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate;

[0151] The substrate is a sapphire substrate.

[0152] The nucleation layer is an AlGaN layer with a thickness of 30 nm.

[0153] The thickness of the intrinsic GaN layer is 400 nm.

[0154] The Si doping concentration in the N-type GaN layer is 7 × 10⁻⁶. 18 cm -3 The thickness is 2μm.

[0155] The multiple quantum well layer comprises a first multiple quantum well layer and a second multiple quantum well layer stacked sequentially. The first multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a first composite quantum barrier layer, with a period number of 5 and a thickness of 3 nm. The first composite quantum barrier layer comprises a Lu-doped GaN sublayer and a Mg-doped GaN sublayer stacked sequentially, with the Lu-doped GaN sublayer having a doping concentration of 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Mg-doped GaN sublayer is 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm.

[0156] The second multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a second composite quantum barrier layer, with a period number of 5. The InGaN quantum well layer has a thickness of 3 nm. The second composite quantum barrier layer is a periodic structure consisting of alternating B-doped GaN sublayers and Si-doped GaN sublayers, with a period number of 5. The doping concentration of the B-doped GaN sublayer is 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Si-doped GaN sublayer is 1 × 10⁻⁶. 16 cm -3 The thickness is 1 nm.

[0157] The electron blocking layer is a periodic structure with alternating AlGaN and InGaN layers, with 3 periods. The thickness of each AlGaN layer is 3 nm, the thickness of each InGaN layer is 3 nm, and the thickness of the electron blocking layer is 18 nm.

[0158] The Mg doping concentration in the p-type GaN layer is 5 × 10⁻⁶. 19 cm -3 The thickness is 10nm.

[0159] The above-mentioned method for fabricating an epitaxial wafer of a light-emitting diode includes the following steps:

[0160] S100 provides a substrate

[0161] A sapphire substrate was selected, and the reaction chamber temperature was controlled at 1000℃ and the pressure at 400 Torr. The sapphire substrate was subjected to high-temperature annealing for 6 minutes in an H2 atmosphere.

[0162] S200 nucleation layer

[0163] The reaction chamber temperature was controlled at 600℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source.

[0164] S300 intrinsic GaN layer growth

[0165] The reaction chamber temperature was controlled at 1100℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, and TMGa was introduced as the Ga source.

[0166] S400 growth of N-type GaN layer

[0167] The reaction chamber temperature was controlled at 1120℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and SiH4 was introduced as the doping source.

[0168] S500 grows the first multiple quantum well layer

[0169] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0170] The reaction chamber temperature was controlled at 850℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and Lu(TMHD)3 as the doping source to grow a Lu-doped GaN sublayer.

[0171] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and CP2Mg as the doping source to grow a Mg-doped GaN sublayer.

[0172] Quantum well layers, Lu-doped GaN sublayers, and Mg-doped GaN sublayers are periodically grown by repeated stacking.

[0173] S600 grows a second quantum well layer

[0174] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0175] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa was introduced as the Ga source, and C6H was introduced. 15 B is used as the doping source to grow a B-doped GaN sublayer.

[0176] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and SiH4 as the doping source to grow a Si-doped GaN sublayer.

[0177] A second composite quantum barrier layer is formed by repeatedly stacking and periodically growing B-doped GaN sublayers and Si-doped GaN sublayers; a quantum well layer and a second composite quantum barrier layer are also formed by repeatedly stacking and periodically growing.

[0178] S700 growth electron barrier layer

[0179] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source to grow an AlGaN layer.

[0180] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMIn was introduced as the In source to grow an InGaN layer.

[0181] AlGaN and InGaN layers are grown periodically by repeated stacking.

[0182] S800 growth of P-type GaN layer

[0183] The reaction chamber temperature was controlled at 900℃ and the pressure at 200 Torr. NH3 was introduced as the N source, TMGa was introduced as the Ga source, and CP2Mg was introduced as the doping source.

[0184] Example 4

[0185] This embodiment provides a light-emitting diode epitaxial wafer, including a substrate and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate;

[0186] The substrate is a sapphire substrate.

[0187] The nucleation layer is an AlGaN layer with a thickness of 30 nm.

[0188] The thickness of the intrinsic GaN layer is 400 nm.

[0189] The Si doping concentration in the N-type GaN layer is 7 × 10⁻⁶. 18 cm -3 The thickness is 2μm.

[0190] The multi-quantum-well layer comprises a first multi-quantum-well layer and a second multi-quantum-well layer stacked sequentially. The first multi-quantum-well layer is a periodic structure consisting of alternating InGaN quantum well layers and a first composite quantum barrier layer, with a period number of 5 and a thickness of 3 nm for the InGaN quantum well layers. The first composite quantum barrier layer is a periodic structure consisting of alternating Lu-doped GaN sublayers and Mg-doped GaN sublayers, with a period number of 5 and a doping concentration of 1 × 10⁻⁶ for the Lu-doped GaN sublayers. 15 cm -3 The thickness is 1 nm, and the doping concentration of the Mg-doped GaN sublayer is 1 × 10⁻⁶. 15 cm -3 The thickness is 1 nm.

[0191] The second multiple quantum well layer is a periodic structure consisting of alternating InGaN quantum well layers and a second composite quantum barrier layer, with a period number of 5. The InGaN quantum well layer has a thickness of 3 nm. The second composite quantum barrier layer is a periodic structure consisting of alternating B-doped GaN sublayers and Si-doped GaN sublayers, with a period number of 5. The doping concentration of the B-doped GaN sublayer is 1 × 10⁻⁶.15 cm -3 The thickness is 1 nm, and the doping concentration of the Si-doped GaN sublayer is 1 × 10⁻⁶. 16 cm -3 The thickness is 1 nm.

[0192] The electron blocking layer is a periodic structure with alternating AlGaN and InGaN layers, with 3 periods. The thickness of each AlGaN layer is 3 nm, the thickness of each InGaN layer is 3 nm, and the thickness of the electron blocking layer is 18 nm.

[0193] The Mg doping concentration in the p-type GaN layer is 5 × 10⁻⁶. 19 cm -3 The thickness is 10nm.

[0194] The above-mentioned method for fabricating an epitaxial wafer of a light-emitting diode includes the following steps:

[0195] S100 provides a substrate

[0196] A sapphire substrate was selected, and the reaction chamber temperature was controlled at 1000℃ and the pressure at 400 Torr. The sapphire substrate was subjected to high-temperature annealing for 6 minutes in an H2 atmosphere.

[0197] S200 nucleation layer

[0198] The reaction chamber temperature was controlled at 600℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source.

[0199] S300 intrinsic GaN layer growth

[0200] The reaction chamber temperature was controlled at 1100℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, and TMGa was introduced as the Ga source.

[0201] S400 growth of N-type GaN layer

[0202] The reaction chamber temperature was controlled at 1120℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and SiH4 was introduced as the doping source.

[0203] S500 grows the first multiple quantum well layer

[0204] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0205] The reaction chamber temperature was controlled at 850℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and Lu(TMHD)3 as the doping source to grow a Lu-doped GaN sublayer.

[0206] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and CP2Mg as the doping source to grow a Mg-doped GaN sublayer.

[0207] The first composite quantum barrier layer is formed by repeatedly stacking and periodically growing Lu-doped GaN sublayers and Mg-doped GaN sublayers; the quantum well layer and the first composite quantum barrier layer are also repeatedly stacked and periodically grown.

[0208] S600 grows a second quantum well layer

[0209] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow a quantum well layer.

[0210] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa was introduced as the Ga source, and C6H was introduced. 15 B is used as the doping source to grow a B-doped GaN sublayer.

[0211] The reaction chamber temperature was controlled at 850℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and SiH4 as the doping source to grow a Si-doped GaN sublayer.

[0212] A second composite quantum barrier layer is formed by repeatedly stacking and periodically growing B-doped GaN sublayers and Si-doped GaN sublayers; a quantum well layer and a second composite quantum barrier layer are also formed by repeatedly stacking and periodically growing.

[0213] S700 growth electron barrier layer

[0214] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMAl was introduced as the Al source to grow an AlGaN layer.

[0215] The reaction chamber temperature was controlled at 950℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, TMGa was introduced as the Ga source, and TMIn was introduced as the In source to grow an InGaN layer.

[0216] AlGaN and InGaN layers are grown periodically by repeated stacking.

[0217] S800 growth of P-type GaN layer

[0218] The reaction chamber temperature was controlled at 900℃ and the pressure at 200 Torr. NH3 was introduced as the N source, TMGa was introduced as the Ga source, and CP2Mg was introduced as the doping source.

[0219] Comparative Example 1

[0220] This comparative example provides a light-emitting diode epitaxial wafer, which differs from Example 1 in that the multiple quantum well layer is a periodic structure formed by alternating InGaN quantum well layers and GaN quantum barrier layers, with a period number of 10, a thickness of 3nm for the InGaN quantum well layer, and a thickness of 3nm for the GaN quantum barrier layer.

[0221] Accordingly, the preparation method does not include the preparation steps of the first and second multiple quantum well layers, but adds a preparation step of multiple quantum well layers; the rest is the same as in Example 1. The preparation steps of the multiple quantum well layers include:

[0222] S500-grown multi-quantum-well layer

[0223] The reaction chamber temperature was controlled at 750℃ and the pressure at 250 Torr. NH3 was introduced as the N source, N2 as the carrier gas, TEGa as the Ga source, and TMIn as the doping source to grow an InGaN quantum well layer.

[0224] The reaction chamber temperature was controlled at 850℃ and the pressure at 300 Torr. NH3 was introduced as the N source, N2 and H2 were introduced as the carrier gas, and TEGa was introduced as the Ga source to grow a GaN quantum barrier layer.

[0225] InGaN quantum well layers and GaN quantum barrier layers are repeatedly stacked and periodically grown.

[0226] Comparative Example 2

[0227] This comparative example provides a light-emitting diode epitaxial wafer, which differs from Example 1 in that it does not include a second multiple quantum well layer. Correspondingly, the fabrication method also excludes the fabrication step of the second multiple quantum well layer; all other aspects are the same as in Example 1.

[0228] Comparative Example 3

[0229] This comparative example provides a light-emitting diode epitaxial wafer, which differs from Example 1 in that it does not include a first multiple quantum well layer. Correspondingly, the fabrication method also excludes the fabrication step of the first multiple quantum well layer; all other aspects are the same as in Example 1.

[0230] Performance testing:

[0231] LED chips with a vertical structure of 10mil×24mil were fabricated from the light-emitting diode epitaxial wafers prepared in Examples 1-4 and Comparative Examples 1-3, and their luminous brightness and antistatic performance were tested.

[0232] (1) Brightness: The brightness was tested on the same LED spot tester under a driving current of 120mA.

[0233] (2) Antistatic performance: The antistatic performance of the chip was tested using an electrostatic meter under the HBM model (human body discharge model) to test the percentage of the chip that could withstand reverse 8000V static electricity.

[0234] The test results are shown in Table 1.

[0235] Table 1. Photoelectric performance test results of LED epitaxial wafers

[0236] Example 1 197.3 96.8 Example 2 197.5 97.0 Example 3 197.8 97.5 Example 4 198.1 97.8 Comparative Example 1 192.2 95.6 Comparative Example 2 192.6 95.7 Comparative Example 3 193.0 95.9

[0237] As shown in Table 1, compared with the chip prepared in Comparative Example 1, the brightness of the chip prepared from the LED epitaxial wafer provided in Example 1 of this invention increased from 192.2 mW to 197.3 mW, and the antistatic capability increased from 95.6% to 96.8%. Examples 2-4 preferably use a first composite quantum barrier layer and / or a second composite quantum barrier layer structure, which can further improve the photoelectric performance of the chip. A comparison between Comparative Examples 1-3 and Example 1 shows that without using the first composite quantum barrier layer and / or the second composite quantum barrier layer provided in Example 1 of this invention, it is difficult to effectively improve the luminous efficiency and antistatic capability.

[0238] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A light-emitting diode epitaxial wafer, characterized in that, It includes a substrate, and a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer sequentially stacked on the substrate; The multi-quantum well layer includes a first multi-quantum well layer and a second multi-quantum well layer stacked on the first multi-quantum well layer; The first multi-quantum well layer is a periodic structure formed by alternating stacking of a first quantum well layer and a first composite quantum barrier layer. The first composite quantum barrier layer is a periodic structure formed by alternating stacking of Lu-doped GaN sublayers and Mg-doped GaN sublayers, with a period number of 5-15. The thickness of the Lu-doped GaN sublayer is 0.5-1 nm, and the doping concentration of the Lu-doped GaN sublayer is 1 × 10⁻⁶. 14 -1×10 16 cm -3 The thickness of the Mg-doped GaN sublayer is 0.5-1 nm, and the doping concentration of the Mg-doped GaN sublayer is 1 × 10⁻⁶. 14 -1×10 16 cm -3 ; The second multiple quantum well layer is a periodic structure formed by alternating stacking of the second quantum well layer and the second composite quantum barrier layer. The second composite quantum barrier layer is a periodic structure formed by alternating stacking of B-doped GaN sublayers and Si-doped GaN sublayers, with a period number of 5-15. The thickness of the B-doped GaN sublayer is 0.1-1 nm, and the doping concentration of the B-doped GaN sublayer is 1 × 10⁻⁶. 14 -1×10 16 cm -3 The thickness of the Si-doped GaN sublayer is 0.1-1 nm, and the doping concentration of the Si-doped GaN sublayer is 1 × 10⁻⁶. 15 -1×10 17 cm -3 .

2. The light-emitting diode epitaxial wafer as described in claim 1, characterized in that, The thickness of the first quantum well layer and the second quantum well layer is 3-7 nm; the number of periods of the first multi-quantum well layer is 2-8; the number of periods of the second multi-quantum well layer is 2-8.

3. The light-emitting diode epitaxial wafer as described in claim 1, characterized in that, The electron blocking layer is a periodic structure formed by alternating AlGaN and InGaN layers, with a period number of 3-15; the thickness of the electron blocking layer is 15-50 nm.

4. A method for fabricating a light-emitting diode epitaxial wafer, used to fabricate a light-emitting diode epitaxial wafer as described in any one of claims 1-3, characterized in that, Includes the following steps: A substrate is provided on which a nucleation layer, an intrinsic GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer are sequentially grown. The multi-quantum well layer includes a first multi-quantum well layer and a second multi-quantum well layer stacked on the first multi-quantum well layer; The first multi-quantum-well layer is a periodic structure formed by alternating stacking of quantum well layers and a first composite quantum barrier layer. The first composite quantum barrier layer includes Lu-doped GaN sublayers and Mg-doped GaN sublayers stacked sequentially. The second multi-quantum-well layer is a periodic structure formed by alternating stacking of quantum well layers and a second composite quantum barrier layer. The second composite quantum barrier layer includes sequentially stacked B-doped GaN sublayers and Si-doped GaN sublayers.

5. The method for fabricating a light-emitting diode epitaxial wafer as described in claim 4, characterized in that, The growth pressure of the first composite quantum barrier layer is 100-500 Torr, and the growth temperature is 800-900℃. The growth pressure of the second composite quantum barrier layer is 100-500 Torr, and the growth temperature is 800-900℃; the growth pressure of the quantum well layer is 100-500 Torr, and the growth temperature is 700-800℃.

6. The method for fabricating a light-emitting diode epitaxial wafer as described in claim 4, characterized in that, The growth pressure of the electron blocking layer is 100-500 Torr, and the growth temperature is 900-1000℃.

7. A light-emitting diode, characterized in that, The light-emitting diode includes a light-emitting diode epitaxial wafer as described in any one of claims 1-3.

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