Shower plate, reaction chamber, processing apparatus using gas, and substrate processing method

Abstract

The present application provides a kind of shower plate, reaction chamber, processing equipment using gas and substrate processing method, one side of shower plate is plane, the other side is non-plane, can make the thickness of middle region of body greater than the thickness of two side regions, so that gas passage can be set at different thicknesses of body, so that the distance between the gas passage in the middle to the spray surface is greater than the distance between the gas passage in the two side regions to the spray surface, so that the spray path of the middle region is longer than the spray path of the two side regions, and the middle of the spray surface faces the middle region of the substrate to be processed, and the two side regions of the spray surface face the two side regions of the substrate to be processed, so that the mixing and secondary distribution effect of the gas inlet cavity can be improved by the different lengths of the spray path, the mixing efficiency and uniformity are improved, and the improvement of film uniformity is beneficial.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment, and particularly to a spray plate, a reaction chamber, a gas processing device, and a substrate processing method. Background Technology

[0002] Atomic layer deposition (ALD) technology is widely used in the fabrication of high-end micro and nano devices and has become one of the core equipment in semiconductor manufacturing.

[0003] Currently, batch ALD equipment is an important branch of ALD equipment. It can effectively improve production efficiency by introducing reactive gas into a chamber containing multiple wafers and performing atomic layer deposition on multiple wafers simultaneously. However, improving the consistency and uniformity of film formation is the key to the realization of batch ALD equipment. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a spray plate, a reaction chamber, a gas processing device and a substrate processing method to optimize the distribution and diffusion of the reaction gas and improve the uniformity and consistency of film formation.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A spray plate includes a body, air ducts, and spray holes;

[0007] The body includes a first surface, a second surface, and a first end face and a second end face, the direction from the first end face to the second end face is the end face direction, and the end face direction is the stacking direction of the substrate to be processed;

[0008] The first surface is planar and the second surface is non-planar, so that the thickness of the central region of the body is greater than the thickness of the two side regions;

[0009] The air passage is disposed in the body from the first end face and / or the second end face along the end face direction, and the distance from the air passage located in the middle region to the first surface is greater than the distance from the air passage located in the two side regions to the first surface.

[0010] The spray hole extends from the first surface to the air passage.

[0011] Optionally, the second surface is a convex arc surface or a spherical surface.

[0012] Optionally, the second surface is an arc surface, and the air passages are arranged in an arc shape on the first end face and / or the second end face.

[0013] Optionally, the air duct includes a first spray air duct and a second spray air duct arranged in an interlaced pattern. The first end and the second end of the body are respectively provided with a first air intake channel and a second air intake channel. The first spray air duct is connected to the first air intake channel, and the second spray air duct is connected to the second air intake channel.

[0014] A reaction chamber includes a cavity, a spray plate as described in any one of the preceding claims, an exhaust structure, and a grid structure, wherein,

[0015] An air inlet and an air outlet are arranged opposite to each other on the side wall of the cavity. The air inlet is connected to the spray plate, and the air outlet is connected to the exhaust structure.

[0016] The grid structure is formed around the inner periphery of the side wall and is integrally formed with the cavity. The grid structure has air gaps that are spaced apart and stacked. The grid structure has a hollow area for accommodating the wafer boat.

[0017] Optionally, the exhaust structure includes an air inlet, an exhaust channel, and an exhaust port connected in sequence, wherein the exhaust channel has a smaller aperture at the end near the exhaust port than at the end near the air inlet.

[0018] Optionally, the exhaust channel is a converging channel with a gradually decreasing aperture.

[0019] Optionally, the wafer boat includes a plurality of support pillars, each with spaced support portions, and the plurality of support portions located on the same plane support a substrate.

[0020] Optionally, the support portion has an anti-slip structure.

[0021] Optionally, the anti-slip structure includes protrusions, limiting blocks, or downwardly inclined support surfaces.

[0022] Optionally, the inclination angle of the downwardly inclined support surface ranges from 5 to 45°.

[0023] Optionally, the inclination angle of the downwardly inclined support surface ranges from 10 to 30°.

[0024] A gas processing device includes a reaction chamber as described in any of the preceding claims, and an outer cavity disposed outside the reaction chamber.

[0025] A method for processing a substrate, comprising processing the substrate using the aforementioned gas-using processing equipment.

[0026] The spray plate, reaction chamber, gas processing equipment, and substrate processing method provided in this embodiment of the invention have one planar side and the other non-planar side, which allows the thickness of the central region of the body to be greater than the thickness of the two side regions. This allows the air channels to be set at different thicknesses of the body, making the distance from the air channel in the central region to the spray surface greater than the distance from the air channel in the two side regions to the spray surface. Thus, the spray path in the central region is longer than the spray path in the two side regions. The central part of the spray surface faces the central region of the substrate to be processed, and the two side regions of the spray surface face the two side regions of the substrate to be processed. Therefore, by using different spray path lengths, the effect of secondary gas distribution in the air inlet chamber can be improved, thereby increasing the gas mixing efficiency and uniformity, which is beneficial to improving the coating uniformity.

[0027] In the reaction chamber of this invention embodiment, an integrally formed grid structure is provided inside the chamber. This grid structure serves as an airflow grid and a separator between substrates. By adopting a grid structure integrally formed with the chamber, the grid is directly connected to the sidewall, and the temperature transfer of the airflow is through conduction and convection, resulting in faster heat conduction. The integrated structure simplifies the chamber structure, making installation, maintenance, and cleaning easier. During cleaning, the chamber and grid structure can be cleaned together without disassembly, facilitating maintenance. The integrated grid structure has better airtightness, and the grid acts as a separator between substrates, creating relatively independent airflow spaces between the substrates. This allows reactants to be better distributed and diffused, thereby improving the uniformity and consistency of film formation. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 A three-dimensional structural schematic diagram of a reaction chamber having a spray plate according to an embodiment of the present invention is shown;

[0030] Figure 2 A three-dimensional structural schematic diagram of a reaction chamber having a spray plate according to another embodiment of the present invention is shown;

[0031] Figure 3 An embodiment of the present invention is shown. Figure 1 A cross-sectional view of the spray plate;

[0032] Figure 4 An embodiment of the present invention is shown. Figure 1 A top view of the reaction chamber;

[0033] Figure 5 A three-dimensional structural schematic diagram of the exhaust structure of the reaction chamber according to an embodiment of the present invention is shown;

[0034] Figure 6 A three-dimensional structural schematic diagram of a grid structure located in a reaction chamber according to an embodiment of the present invention is shown;

[0035] Figure 7 A side view illustrating a grid structure according to an embodiment of the present invention is shown;

[0036] Figure 8 A three-dimensional structural schematic diagram of a wafer boat placed in a reaction chamber according to an embodiment of the present invention is shown;

[0037] Figure 9 A side view of a wafer boat placed in a reaction chamber according to an embodiment of the present invention is shown;

[0038] Figure 10 A partially enlarged schematic diagram of a wafer boat placed in a reaction chamber according to an embodiment of the present invention is shown. Detailed Implementation

[0039] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0040] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0041] As described in the background section, improving the consistency and uniformity of film formation is key to the realization of batch ALD equipment. To this end, this patent provides a spray plate and a reaction chamber to optimize the distribution and diffusion of reaction gases and improve the uniformity and consistency of film formation.

[0042] See Figures 1-4 As shown, an embodiment of the present invention provides a spray plate 110, which is applied in a batch substrate processing equipment and includes a body 114, an air channel 112 and a spray hole 113.

[0043] The body 114 includes a first surface 114-3, a second surface 114-4, and a first end face 114-1 and a second end face 114-2, with the direction from the first end face 114-1 to the second end face 114-2 being the end face direction, which is the stacking direction of the substrate to be processed.

[0044] The first surface 114-3 is planar and the second surface 114-4 is non-planar, so that the thickness of the middle region of the body 114 is greater than the thickness of the two side regions;

[0045] The air passage 112 is disposed in the body 114 from the first end face 114-1 and / or the second end face 114-2 along the end face direction. The distance from the air passage 112 located in the middle region to the first surface 114-3 is greater than the distance from the air passage 112 located in the two side regions to the first surface 114-3.

[0046] The spray hole 113 extends from the first surface 114-3 to the air passage 112.

[0047] In this embodiment of the invention, the first surface 114-3 is a spray surface. The reaction gas enters the reaction chamber from the first surface 114-3 through the air channel 112 and the spray hole 113. A batch of substrates to be processed, such as wafers, are placed in the reaction chamber. The stacking direction of the substrates to be processed is from the first end face 114-1 to the second end face 114-2, which is also the extension direction of the air channel 112. In this way, after the reaction gas enters the reaction chamber through the spray hole 113, it flows between the stacked substrates.

[0048] In this embodiment of the invention, the first surface 114-3 of the body 114 is planar and the second surface 114-4 is non-planar, so that the thickness of the body 114 is a non-constant thickness value. The thickness of the central region of the body is controlled to be greater than the thickness of the two side regions by the shape change of the second surface 114-4. The central region refers to the central region of the substrate to be processed, and the two side regions refer to the two side regions of the substrate to be processed. At least at the same height in the end face direction, the thickness of the central region of the body 114 is greater than the thickness of the two side regions.

[0049] The gas passage 112 is used to transport the reaction gas. The gas passage 112 is disposed in the body 114. The gas passage 114 is provided with spray holes 113. The spray holes 113 can be evenly arranged on the gas passage 112 and can have a uniform aperture, or different apertures can be set in different areas as needed. The spray holes 113 are through holes from the gas passage 112 to the first surface 114-3. In this way, the reaction gas enters the reaction chamber through the gas passage 112 and the spray holes 113. The first surface 114-3 of the body is the spray surface, and the gas passage 112 is the spray gas passage.

[0050] Since the thickness of the central region of the body is greater than that of the two side regions, air channels 112 can be set along the end face direction at different thicknesses of the body. This makes the distance from the air channel in the central region to the spray surface greater than the distance from the air channel in the two side regions to the spray surface. In this way, the spray path in the central region is longer than the spray path in the two side regions. The central part of the spray surface faces the central region of the substrate to be processed, and the two side regions of the spray surface face the two side regions of the substrate to be processed. Thus, by using different spray path lengths, the effect of secondary gas distribution in the air inlet cavity can be improved, the gas mixing efficiency and uniformity can be increased, which is beneficial to the improvement of coating uniformity.

[0051] In some embodiments, reference Figure 1 As shown, the second surface 114-4 of the body 114 is a convex arc surface. In this way, the thickness of the body 114 decreases from the center to both sides. The air passage 112 in the central region can be set in the thicker body, and the air passages 112 on both sides can be set in the thinner body. More preferably, the air passages 112 can be arranged in an arc shape. In this way, the distance from the air passages 112 to the spray surface decreases from the center to both sides, so that the path of the reaction gas entering the reaction chamber gradually changes, and the effect of secondary gas mixing in the air inlet chamber is better improved.

[0052] In other embodiments, reference is made to Figure 2 As shown, the second surface 114-4 of the body 114 is a convex spherical surface. In this way, the thickness of the body 114 decreases from the center to the periphery, thereby controlling the thickness of the central region of the body to be greater than the thickness of the two side regions. The air passage 112 in the central region can be set in the thicker body, and the air passages 112 on both sides can be set in the thinner body, so that the spray path in the central region is longer than the spray path on both side regions.

[0053] In this embodiment of the invention, the spray air duct 112 can be connected to different reactant gas sources, see [link to relevant documentation]. Figure 3As shown, the spray air duct 112 includes a first spray air duct 112-1 and a second spray air duct 112-2. Both the first and second spray air ducts 112-1 and 112-2 are multiple and arranged in an interlaced pattern. A first air inlet channel 116 and a second air inlet channel 118 are respectively provided at both ends of the spray plate 110. The first spray air duct 112-1 is connected to the first air inlet channel 116, and the second spray air duct 112-2 is connected to the second air inlet channel 118. That is, multiple first spray air ducts 112-1 and second spray air ducts 112-2 are arranged alternately and then connected to the first air inlet channel 116 and the second air inlet channel 118 respectively. The first air inlet channel 116 and the second air inlet channel 118 can be connected to different gas source devices. In this way, different reactant gases enter the cavity from the spaced spray air ducts, which can improve the mixing efficiency and uniformity, and is beneficial to improving the uniformity of the coating. In specific applications, the location of the air inlet, the diameter and number of spray air channels, and the number and diameter of spray holes on the spray air channels can be determined according to the specific process requirements, such as the viscosity, density, process temperature and process pressure of the air source.

[0054] The spray plate of the present invention has been described in detail above. Furthermore, the present invention also provides a reaction chamber provided with the above-described spray plate 110. (See also...) Figure 1-10 As shown, the reaction chamber includes the aforementioned spray plate 110, cavity 100, exhaust structure 120, and grid structure 130, wherein,

[0055] The cavity 100 has an air inlet and an air outlet opposite to each other on its side wall. The air inlet is connected to the spray plate 110, and the air outlet is connected to the exhaust structure 120.

[0056] The grid structure 130 is formed around the inner periphery of the side wall and integrally formed with the cavity. The grid structure 130 has air gaps 134 that are spaced apart and stacked. The grid structure 130 has a hollow area 132 for accommodating the wafer boat 140.

[0057] In the reaction chamber of this invention embodiment, an integrally formed grid structure is provided inside the chamber. This grid structure serves as an airflow grid and a separator between substrates. By adopting a grid structure integrally formed with the chamber, the grid is directly connected to the sidewall, and the temperature transfer of the airflow is through conduction and convection, resulting in faster heat conduction. The integrated structure simplifies the chamber structure, making installation, maintenance, and cleaning easier. During cleaning, the chamber and grid structure can be cleaned together without disassembly, facilitating maintenance. The integrated grid structure has better airtightness, and the grid acts as a separator between substrates, creating relatively independent airflow spaces between the substrates. This allows reactants to be better distributed and diffused, thereby improving the uniformity and consistency of film formation.

[0058] In this embodiment of the invention, the reaction chamber 100 is a space for processing the substrate. The first and second surfaces of the chamber, as well as the sidewall between the first and second surfaces, form an accommodating space. A chamber cover 101 is provided on the first surface and is detachably fixed to the first surface. When the chamber cover 101 is open, the substrate to be processed can enter the chamber. After the chamber cover 101 is closed, the reactants enter the chamber through the spray plate 110, and the processing can be carried out. After processing is completed, the chamber cover 101 is opened again, and the processed substrate is taken out of the chamber.

[0059] In different applications, the chamber can be an inner chamber, with an outer cavity outside it. Other devices for processing can be installed in the outer cavity, such as an air inlet pipe, a heating device, and a substrate conveying device. Depending on the application and design, the chamber cover 101 can be located on the top or bottom surface of the inner chamber. In one specific embodiment, the first surface of the chamber 100 is the bottom surface, the chamber cover 101 is located on the bottom surface, and the substrate conveying device is located below the inner chamber, picking up and delivering the substrate from the chamber cover 101.

[0060] In this embodiment of the invention, the spray plate 110 is disposed at the end of the chamber 100, opposite to the exhaust structure 120. The spray plate 110 serves as the inlet end of the reactants and is the main carrier for the distribution and diffusion of reactant gases. The spray plate 110 allows the reactant gases to enter the chamber in the form of sprays, playing a crucial role in ensuring the uniformity and consistency of the substrate coating. See also... Figure 3 As shown, the spray plate 110 is provided with spray air channels 112, which extend along the direction between the first and second surfaces of the chamber 100. Each spray air channel 112 includes a channel and spray holes 113 on the channel wall facing the interior of the chamber. Multiple spray air channels 112 can be provided, evenly distributed throughout the spray plate. Each channel can have multiple spray holes, also evenly distributed along the channel. One or more gases can be introduced into the spray air channels 112. The spray plate 110 can adopt any of the aforementioned spray plate structures. In specific applications, the location of the air inlet, the diameter and number of the spray holes, and the number and diameter of the spray holes on the spray air channel can be determined according to the specific process requirements, such as gas viscosity, density, process temperature, and process pressure.

[0061] See Figure 1-2 , Figures 6-8As shown, in this embodiment of the invention, the grille structure 130 surrounds the substrate, providing a uniform air intake channel for the substrate. The grille structure 130 has mutually spaced and stacked air gaps 134, which are formed by parallel and spaced grille pieces 132. The grille structure 130 has a hollow area 132, which can be disposed below the chamber cover 101. The hollow area 132 is used to place the stacked substrates. The grille structure 130 surrounds the stacked substrates. The grille structure 130 is formed around the inner wall of the cavity 100, extends to the air intake end and air outlet end of the cavity 100, and is connected to the other side walls of the cavity 100 as a whole and formed by integral molding.

[0062] The stacked substrates 150 can be placed on the wafer boat 140, with the wafer stacking direction consistent with the stacking direction of the grid sheets in the grid structure 130. The wafer boat 140 has a shape that substantially matches the hollow region 132 of the grid structure 130 and can be placed in the hollow region 132. After the substrates are placed in the wafer boat and then in the hollow region 132, the gaps between adjacent substrates 150 correspond in position to the air gaps 134 of the grid structure 130, thus forming an airflow channel between each substrate. Air gaps exist between the grid structures. When substrates are placed in the hollow region of the grid structure, the gaps between the substrates correspond to the air gaps of the grid structure. The reactant gas enters the gaps between the substrates through the air channels and spray holes 113 via the air gaps of the grid structure, thereby forming a transverse airflow space between the substrates from the inlet to the outlet.

[0063] Because an integrally molded grid structure is installed inside the cavity, this grid structure acts as an airflow grid and a separator between the substrates. The grid structure, being integrally molded with the cavity, is directly connected to the sidewalls, allowing for both conductive and convective heat transfer, resulting in faster heat conduction. The integrated structure simplifies the cavity structure, making installation, maintenance, and cleaning easier. During cleaning, the cavity and grid structure can be cleaned together without disassembly, facilitating maintenance. The integrated grid structure provides better sealing, with the grid acting as a separator between the substrates, creating relatively independent airflow spaces. This allows for better distribution and diffusion of reactants, thereby improving the uniformity and consistency of the film formation.

[0064] In some embodiments, see Figures 8 to 10As shown, the wafer boat includes multiple support pillars 142, each with spaced support portions 146. These support portions 146, located on the same plane, support a substrate 150. The number of support pillars 142 can be set as needed; it is understood that their number is related to the arrangement of the support portions 146, ensuring that at least one substrate can be stably supported by the support portions 146 on the same plane. In one specific embodiment, the number of support pillars 142 can be three, and the support portions 146 can be inwardly protruding bumps on the support pillars.

[0065] The support section can have an anti-slip structure, which helps to prevent the substrate from sliding. The anti-slip structure can be made up of protrusions, limiting blocks, or downwardly inclined support surfaces. Among them, the protrusion structure provides a planar support composed of points, which has a more stable support effect than the planar contact support and prevents the substrate from sliding. The limiting block structure confines the substrate in the plane composed of limiting blocks, thereby preventing the substrate from sliding.

[0066] In a preferred embodiment, the anti-slip structure of the support portion 146 may also have a downwardly inclined support surface, as shown in the reference. Figure 10 A partial enlarged view of the support surface shows that the inclined support surface provides a line contact surface for the substrate. In some embodiments, the inclination angle of the downwardly inclined support surface ranges from 5 to 45°, and more preferably, the inclination angle ranges from 10 to 30°. Compared to a design where the wafer and support surface are planar, this provides more stable support for the substrate. Furthermore, the smaller contact area between the inclined support surface and the substrate reduces coating defects at the contact surface, thus improving the substrate processing quality.

[0067] See Figure 1-2 , Figure 5 As shown, the exhaust structure 120 includes an air inlet 122, an exhaust channel 124, and an exhaust port 126 connected in sequence. The end of the exhaust channel 124 near the exhaust port 126 has a smaller aperture than the end near the air inlet 122. More preferably, the exhaust channel 124 is a converging channel with a gradually decreasing aperture. The exhaust structure acts as a tail exhaust; the waste gas after the reaction passes through the air inlet 122 and the exhaust channel 124, and is discharged from the exhaust port 126. The exhaust port 126 can be connected to a vacuum pump. In this way, the reaction gas passes through the spray plate, the grid structure, the substrate, and the exhaust structure 120 in sequence, achieving three uniform distributions and diffusions before being discharged, improving the mixing efficiency and uniformity, which is beneficial to improving the coating uniformity.

[0068] The reaction chamber of the present invention has been described in detail above. Furthermore, the present invention also provides a gas processing device, including the above-described reaction chamber and an outer cavity disposed outside the reaction chamber. Other required structures, such as an air inlet pipe, a heating device, a substrate conveying device, etc., can be further disposed in the outer cavity.

[0069] This invention also provides a substrate processing method, which utilizes the aforementioned gas-based processing equipment to process the substrate. In this invention, the substrate is the material to be processed, such as a silicon wafer or other semiconductor material wafer.

[0070] The above description is merely a preferred embodiment of the present invention. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall still fall within the protection scope of the technical solutions of the present invention.

Claims

1. A spray plate, used in an ALD (Alternating Current Discharge) device, wherein the ALD device is provided with a wafer boat for placing stacked substrates, characterized in that, Includes the main body, air passages, and spray nozzles; The body includes a first surface, a second surface, and a first end face and a second end face, the direction from the first end face to the second end face is the end face direction, and the end face direction is the stacking direction of the substrate to be processed; The first surface is planar and the second surface is non-planar, so that the thickness of the central region of the body is greater than the thickness of the two side regions; The air passage is disposed in the body from the first end face and / or the second end face along the end face direction, and the distance from the air passage located in the middle region to the first surface is greater than the distance from the air passage located in the two side regions to the first surface. The spray hole extends from the first surface to the air passage.

2. The spray plate according to claim 1, wherein the second surface is a convex arc surface or a spherical surface.

3. The spray plate according to claim 1, characterized in that, The second surface is an arc surface, and the air passages are arranged in an arc shape on the first end face and / or the second end face.

4. The spray plate according to any one of claims 1-3, characterized in that, The air passage includes a first spray air passage and a second spray air passage arranged in an interlocking pattern. The first end and the second end of the main body are respectively provided with a first air intake channel and a second air intake channel. The first spray air passage is connected to the first air intake channel, and the second spray air passage is connected to the second air intake channel.

5. A reaction chamber used in an ALD device, characterized in that, Includes a cavity, a spray plate as described in any one of claims 1-4, an exhaust structure, and a grille structure, wherein, An air inlet and an air outlet are arranged opposite to each other on the side wall of the cavity. The air inlet is connected to the spray plate, and the air outlet is connected to the exhaust structure. The grid structure is formed around the inner periphery of the side wall and is integrally formed with the cavity. The grid structure has air gaps that are spaced apart and stacked. The grid structure has a hollow area for accommodating the wafer boat.

6. The reaction chamber according to claim 5, characterized in that, The exhaust structure includes an air inlet, an exhaust channel, and an exhaust outlet connected in sequence. The exhaust channel has a smaller aperture at the end near the exhaust outlet than at the end near the air inlet.

7. The reaction chamber according to claim 6, characterized in that, The exhaust channel is a converging channel with a gradually decreasing aperture.

8. The reaction chamber according to claim 5, characterized in that, The wafer boat includes multiple support pillars, each with spaced support portions, and the multiple support portions located on the same plane support a substrate.

9. The reaction chamber according to claim 8, characterized in that, The support has an anti-slip structure.

10. The reaction chamber according to claim 9, characterized in that, The anti-slip structure includes protrusions, limiting blocks, or downwardly inclined support surfaces.

11. The reaction chamber according to claim 10, characterized in that, The downward-sloping support surface has an inclination angle ranging from 5 to 45°.

12. The reaction chamber according to claim 10, characterized in that, The downward-sloping support surface has an inclination angle ranging from 10 to 30°.

13. A gas processing device, characterized in that, It includes a reaction chamber as described in any one of claims 5-12, and an outer cavity disposed outside the reaction chamber.

14. A method for processing a substrate, characterized in that, The substrate is processed using the gas-using processing apparatus as described in claim 13.

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