Anti-conduction structure and manufacturing method, wafer boat and semiconductor process equipment

Abstract

The embodiment of the present application provides a kind of anti-conduction structure and manufacturing method, wafer boat and semiconductor process equipment, the anti-conduction structure includes: spacer body, with the through hole for connecting rod to pass through, at least one recess is formed on the spacer body, the spacer body is made of easy-to-machine material;First insulating layer is arranged on the outer surface of the spacer body, the first insulating layer has first thickness and first density;Second insulating layer is arranged on the outer surface of the first insulating layer, the first insulating layer has second thickness and second density;Wherein the first thickness is less than the second thickness, and the first density is greater than the second density.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, specifically to an anti-conduction structure and manufacturing method for electrode boats, a wafer boat, and semiconductor process equipment. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) is widely used in semiconductor manufacturing technologies such as photovoltaics. A silicon wafer is placed on a graphite boat, which acts as an electrode. When an electric current is applied to the boat, plasma is generated between the two boats. Ionized atoms gradually deposit onto the silicon wafer surface, resulting in the desired thin film. A graphite boat consists of multiple graphite sheets, and ceramic rings are installed between the sheets to prevent electrical conductivity. However, when PECVD needs to deposit conductive films such as polycrystalline silicon films, the deposition of the polycrystalline silicon film on the ceramic rings can cause electrical conductivity between the graphite sheets, preventing normal operation.

[0003] To avoid conductivity issues in the graphite boat sheets, a non-conduction structure has been proposed in related technologies. This structure involves forming multiple grooves 1 on the surface of a ceramic ring between the graphite boat sheets, such as... Figure 1 As shown, since it is difficult for gas to enter the groove 1 for deposition, the thin film 2 formed by the vapor deposition process can only be formed on the top of the fins between adjacent grooves 1 and on the outside of the groove 1. In other words, the thin film 2 is broken at the part corresponding to the groove 1 and cannot form a continuous thin film that can connect the two graphite boats, thereby suppressing the conductivity problem between the graphite boats.

[0004] However, these anti-conduction structures are made of ceramic materials, which have extremely low plasticity and strength, making them prone to brittle fracture. They are insufficient to support complex and delicate structures and the machining of grooves with large aspect ratios. Their ability to block gas diffusion is also limited; gas can still diffuse into the grooves, thus reducing the frequency and effectiveness of anti-conduction measures. Due to their short service life, high maintenance costs, and poor maintenance effectiveness, the actual production cost is relatively high, which does not meet the inherent requirement of low-cost photovoltaic manufacturing. Summary of the Invention

[0005] In view of this, embodiments of the present invention provide an anti-conduction structure and manufacturing method for electrode boats, a wafer boat, and semiconductor process equipment to solve at least one of the problems of short service life, high maintenance cost, and poor maintenance effect of the existing anti-conduction structures, thereby reducing production costs.

[0006] According to a first aspect, embodiments of the present invention provide an anti-conduction structure for electrode boats, comprising: an insulating body having a through hole for a connecting rod to pass through, the insulating body having a plurality of fins formed thereon, a groove being formed between two adjacent fins, the insulating body being made of an easily machinable material; a first insulating layer disposed on the outer surface of the insulating body, the first insulating layer having a first thickness and a first density; a second insulating layer disposed on the outer surface of the first insulating layer, the first insulating layer having a second thickness and a second density; wherein the first thickness is less than the second thickness, and the first density is greater than the second density.

[0007] Optionally, the first insulating layer is made of oxide or nitride and has a thickness of 20 nm to 100 μm; or the second insulating layer is made of oxide or nitride and has a thickness of 50 nm to 250 μm.

[0008] Optionally, the first insulating layer includes at least one of aluminum oxide, titanium oxide, aluminum nitride, and titanium nitride; or the second insulating layer includes at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, and silicon carbide.

[0009] Optionally, the first insulating layer is made using an anodic oxidation process; or the second insulating layer is made using a low-pressure chemical vapor deposition process, a sol-gel film formation process, or an atomic layer deposition process.

[0010] Optionally, the easily processed material is a metal material.

[0011] Optionally, the depth-to-width ratio of the groove is greater than 100; or the width of the fin is less than 0.1 mm.

[0012] Optionally, the anti-conduction structure further includes a shielding layer formed on the outside of the fin and disposed around the fin to shield the groove.

[0013] Optionally, the extending direction of the shielding layer is perpendicular to the extending direction of the fin.

[0014] Optionally, the fins extend radially along the through hole; the length of the outermost fin in the axial direction of the through hole is greater than the length of the other fins; there are two shielding layers, each shielding layer is connected to the top of the outermost fin in the axial direction of the through hole, and the two shielding layers extend towards each other in the axial direction of the through hole, with a gap forming between the two shielding layers around the fin.

[0015] Optionally, the fins extend along the axial direction of the through hole; the length of the outermost fin in the radial direction of the through hole is greater than the length of the other fins; there are two shielding layers, each shielding layer is connected to the top of the outermost fin in the radial direction of the through hole, and each shielding layer extends toward the through hole in the radial direction of the through hole, and a gap is formed between each shielding layer and the main body of the isolation member constituting the through hole, surrounding the fins.

[0016] According to a second aspect, embodiments of the present invention provide a method for manufacturing an anti-conduction structure between electrode boats, comprising: forming an isolation component body using an easily machinable material, the isolation component body having a through hole for a connecting rod to pass through, and forming a plurality of fins on the isolation component body, with a groove formed between two adjacent fins; forming a first insulating layer on the outer surface of the isolation component body, the first insulating layer having a first thickness and a first density; forming a second insulating layer on the outer surface of the first insulating layer, the second insulating layer having a second thickness and a second density; wherein the first thickness is less than the second thickness, and the first density is greater than the second density.

[0017] Optionally, forming a first insulating layer on the outer surface of the insulating member body includes: anodizing the insulating member body to form the first insulating layer; or forming a second insulating layer on the outer surface of the first insulating layer includes: using a low-pressure chemical vapor deposition process, a sol-gel film formation process, or an atomic layer deposition process to form the second insulating layer.

[0018] Optionally, the manufacturing method further includes forming a shielding layer around the fin on the outside of the fin to shield the groove.

[0019] According to a third aspect, embodiments of the present invention provide a wafer boat, comprising: at least two electrode boats; an anti-conduction structure as described in any one of the first aspects, disposed between two adjacent electrode boats; and a connecting rod passing through each of the electrode boats and each of the anti-conduction structures to fix the electrode boats.

[0020] According to a fourth aspect, an embodiment of the present invention provides a semiconductor process apparatus, characterized in that it includes: a process cavity; a wafer boat as described in the third aspect, disposed within the process cavity; and a support mechanism disposed within the process cavity to support the wafer boat.

[0021] According to embodiments of the present invention, the anti-conduction structure and manufacturing method for electrode boats, wafer boats, and semiconductor process equipment, the isolation component body of the anti-conduction structure is made of an easily machinable material, enabling the fabrication of groove structures with a large aspect ratio on the isolation component body. This makes it difficult for gas to enter and deposit inside the grooves. Furthermore, the thickness of the fins in the groove structure is smaller, and the width of the grooves is also smaller, allowing for the formation of more grooves per unit length, greatly enhancing the anti-conduction capability of the anti-conduction structure. Moreover, because the anti-conduction structure is made of an easily machinable material, it will not experience brittle fracture, reducing the processing cost of the anti-conduction structure. It is also less prone to wear during disassembly, cleaning, and maintenance, resulting in a long service life and low maintenance costs. Furthermore, the anti-conduction structure prevents the outward diffusion of atoms of the easily machinable material in the isolation component body by providing a high-density, thin first insulating layer on the outer surface of the isolation component body, and ensures the insulation performance of the anti-conduction structure by providing a low-density, thicker second insulating layer on the outer surface of the first insulating layer. This also blocks etching damage from cleaning fluid and bombardment damage from plasma, while accommodating the thermal expansion and contraction effects of the easily machinable material.

[0022] According to the anti-conduction structure of the present invention, the conduction time is effectively extended. Tests show that it can extend the conduction time by more than 10 times compared with existing anti-conduction structures. Attached Figure Description

[0023] The features and advantages of the invention will be more clearly understood by referring to the accompanying drawings, which are schematic and should not be construed as limiting the invention in any way. In the drawings:

[0024] Figure 1 A schematic diagram of an anti-conduction structure in the prior art is shown;

[0025] Figure 2 A perspective view of an anti-conduction structure with an electrode boat according to an embodiment of the present invention is shown;

[0026] Figure 3 It shows Figure 2 A side view of an anti-conduction structure with electrode boats;

[0027] Figure 4 A perspective view of an anti-conduction structure according to an embodiment of the present invention is shown;

[0028] Figure 5 It shows Figure 4 A schematic diagram of the cross-section of the anti-conduction structure;

[0029] Figure 6 It shows Figure 5 An enlarged view of the dashed box in the image;

[0030] Figure 7A perspective view of an anti-conduction structure according to another embodiment of the present invention is shown;

[0031] Figure 8 It shows Figure 7 A side view of the anti-conduction structure;

[0032] Figure 9 It shows Figure 7 A schematic diagram of the cross-section of the anti-conduction structure;

[0033] Figure 10 A perspective view of an anti-conduction structure according to another embodiment of the present invention is shown;

[0034] Figure 11 It shows Figure 10 A schematic diagram of the cross-section of the anti-conduction structure;

[0035] Figure 12 It shows Figure 11 An enlarged view of the dashed box in the image;

[0036] Figure 13 A side view of an anti-conduction structure according to another embodiment of the present invention is shown;

[0037] Figure 14 It shows Figure 13 A schematic diagram of the cross-section of the anti-conduction structure;

[0038] Figure 15 A flowchart illustrating a method for manufacturing an anti-conduction structure according to an embodiment of the present invention is shown;

[0039] Figure 16 A schematic diagram of a wafer boat according to an embodiment of the present invention is shown;

[0040] Figure 17 It shows Figure 16 Enlarged schematic diagram of region A in the middle;

[0041] Figure 18 A schematic diagram of a semiconductor process apparatus according to an embodiment of the present invention is shown. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] Figures 2 to 6A schematic diagram of an anti-conduction structure between electrode boats according to an embodiment of the present invention is shown, such as... Figures 2 to 6 As shown, an anti-conduction structure 11 is disposed between two adjacent electrode boats 12 to prevent conduction between adjacent electrode boats 12. The electrode boats 12, for example, can be made of graphite material and are used to carry the wafer and load radio frequency power. When radio frequency power is loaded onto the electrode boats 12, the reactive gas between two adjacent electrode boats 12 is ionized to form plasma, thereby enabling deposition or etching processes on the wafer carried by the electrode boats 12. Although not shown in the figure, those skilled in the art should understand that... Figure 2 and Figure 3 The wafer boat shown may include multiple electrode boats 12, and an anti-conduction structure 11 is provided between two adjacent electrode boats 12 to prevent two adjacent electrode boats 12 from being short-circuited.

[0044] like Figures 4 to 6 As shown, the anti-conduction structure 11 may include an isolator body 111, a first insulating layer 112, and a second insulating layer 113. The isolator body 111 has a through hole 14 for a connecting rod 13 to pass through. The connecting rod 13 passes through the isolator body 111 and the electrode boat 12 to fix the electrode boat 12. For example, all the electrode boats 12 can be fixed with nuts at both ends of the connecting rod 13. The connecting rod 13 may be made of insulating materials such as ceramic. The connecting rod 13 is columnar, and its cross-section may be circular or non-circular. The shape of the through hole on the isolator body 111 is adapted to the shape of the connecting rod 13. In an optional embodiment, the cross-section of the connecting rod 13 is non-circular, such as elliptical or rectangular, which can prevent the anti-conduction structure 11 from rotating, thereby making the assembled wafer boat more stable. Similarly, the cross-section of the isolator body 111 may be circular or non-circular.

[0045] exist Figures 2 to 6In the illustrated embodiment, a plurality of fins 114 are formed on the isolator body 111, and a groove 115 is formed between two adjacent fins 114. When the wafer boat is fed into the semiconductor process equipment for vapor deposition, the groove 115 makes it difficult for gas to enter the groove for deposition, and it can only be deposited on the fins 114 of the anti-conduction structure 11. The film deposited by the vapor deposition process on the surface of the anti-conduction structure 11 is broken at the location corresponding to the groove 115, and a continuous film that can connect the two electrode boats cannot be formed, thereby suppressing the conduction between the electrode boats 12, and thus making the semiconductor process equipment work stably. In this embodiment, the groove 115 extends in the radial direction of the through hole 14. Those skilled in the art should understand that the present invention is not limited to this. The purpose of the groove is to prevent the vapor deposition process from depositing a continuous film that connects the two electrode boats on the surface of the anti-conduction structure 11. Therefore, those skilled in the art can arbitrarily set the extension direction of the groove according to the actual situation. Those skilled in the art should also understand that the groove 115 does not necessarily have to be straight. The groove 115 can also be serrated, wedge-shaped, or labyrinth-shaped to further increase the path for gas diffusion into the bottom of the groove, thereby further increasing the anti-conduction capability.

[0046] exist Figures 10 to 12 In another embodiment shown, a plurality of fins 114 extending axially along the through-hole are formed on the isolator body 111. A groove 115 is formed between two adjacent fins 114. This groove 115 also makes it difficult for gas to enter and deposit in the groove. The film deposited by the vapor deposition process on the surface of the anti-conduction structure 11 is broken at the location corresponding to the groove 115, and a continuous film that can connect the two electrode boats cannot be formed, thereby suppressing the conduction between the electrode boats 12, and thus making the semiconductor process equipment work stably. Similarly, the groove 115 in this embodiment does not have to be straight. The groove 115 can also be serrated, wedge-shaped, or labyrinth-shaped to further increase the path for gas to diffuse into the bottom of the groove, thereby further increasing the anti-conduction capability.

[0047] Those skilled in the art should understand that the above embodiments are merely examples and are not intended to limit the structure or size of the anti-conduction structure of the present invention.

[0048] In this embodiment of the invention, the isolator body 111 can be made of an easily machinable material, such as a metal, more specifically, aluminum, titanium, aluminum alloy, or titanium alloy. These metal materials are highly machinable, enabling micron-level ultra-fine structure processing. For example, machining the metal material easily achieves a groove structure with a large aspect ratio. For instance, the width of the groove 115 and the thickness of the fin 114 can be less than 0.1 mm, even as low as 0.01 mm, and the depth of the groove 115 can be 10-20 mm. That is, the aspect ratio of the groove can be greater than 100, even reaching 1000 or 2000. With such a high aspect ratio, gas is difficult to enter and deposit inside the groove 115. In contrast, existing ceramic anti-conduction structures are difficult to manufacture, typically only allowing for 8-10 fins, and the aspect ratio of the groove is also difficult to make very large, thus limiting their ability to block gas diffusion.

[0049] Still with Figures 2 to 6 Taking the illustrated embodiment as an example, a plurality of fins 114 extending radially along the through holes are formed on the main body 111 of the isolator. A groove 115 is formed between two adjacent fins 114. Since the main body of the isolator is made of an easily machinable material, the thickness of the fins 114 and the width of the grooves 115 can be smaller. The smaller groove width improves the ability to block gas diffusion into the groove. Furthermore, the smaller fin thickness allows for the formation of more grooves per unit length. This means that the thin film deposited by the vapor deposition process on the surface of the anti-conduction structure will have more breaks. As long as there is even one break, the electrode boats 12 will not be conductive, thus greatly improving the anti-conduction capability of the anti-conduction structure 11 and reducing the processing cost of the anti-conduction structure 11. Moreover, since the anti-conduction structure of this embodiment is made of easily machinable materials such as metal, it will not experience brittle fracture, resulting in a long service life and low maintenance costs.

[0050] Unlike existing anti-conduction structures made of ceramic materials, the main body of the anti-conduction structure in this invention is made of easily machinable materials such as metal. However, metal is conductive and cannot achieve isolation between electrode plates. Therefore, although metal is easily machinable, those skilled in the art would obviously not use it to fabricate an anti-conduction structure. The innovation of this invention lies in forming two different insulating layers on the surface of the insulating body 111, enabling easily machinable materials such as metal to be used to manufacture the anti-conduction structure between the electrode plates.

[0051] like Figure 6 and Figure 12As shown, the insulating layer formed on the surface of the insulating member body 111 includes a first insulating layer 112 and a second insulating layer 113. The first insulating layer 112 is disposed on the outer surface of the insulating member body 111 and has a first thickness and a first density. The second insulating layer 113 is disposed on the outer surface of the first insulating layer 112 and has a second thickness and a second density. The first thickness is less than the second thickness and the first density is greater than the second density.

[0052] In some optional embodiments of the present invention, the first insulating layer 112 may be made of oxide or nitride, and the thickness of the first insulating layer 112 may be 20 nm to 100 μm, preferably 20 nm to 10 μm, more preferably 20 nm to 1000 nm; the second insulating layer 113 may be made of oxide or nitride, and the thickness of the second insulating layer 113 may be 50 nm to 250 μm, preferably 50 nm to 25 μm, more preferably 50 nm to 5000 nm. More specifically, the first insulating layer 112 may include at least one of aluminum oxide, titanium oxide, aluminum nitride, and titanium nitride; the second insulating layer 113 may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, and silicon carbide. That is, the first insulating layer 112 and the second insulating layer 113 may be a single-layer structure or a multi-layer structure, and the multi-layer structure may be composed of different insulating materials. In some optional embodiments of the present invention, the first insulating layer 112 may be made by anodizing; the second insulating layer 113 may be made by low-pressure chemical vapor deposition (LPCVD), sol-gel film formation process or atomic layer deposition (ALD).

[0053] In the anti-conduction structure of this embodiment, a two-layer insulating structure is adopted. The function of the first insulating layer 112 is to prevent the outward diffusion of easily processed materials of the isolator body 111 (e.g., the outward diffusion of metal atoms, leading to metal contamination). Therefore, a high-density insulating material is required to effectively block the outward diffusion of atoms. However, the film formation speed of a high-density insulating layer is slower and the film thickness is limited. Furthermore, the inventors of this invention have discovered through research that the thickness of the first insulating layer 112 should not be set too thick. This is because the thermal expansion and contraction effect of easily processed materials such as metals is significant. During semiconductor manufacturing processes, the wafer boat needs to be heated to above 500°C, and then cooled to room temperature when not in use. If the thickness of the first insulating layer 112 is too thick, cracks are likely to occur during use, thus failing to effectively block the outward diffusion of metal atoms. To ensure the insulation performance of the anti-conduction structure, a second insulating layer 113 is also provided on the surface of the first insulating layer 112. The density of the second insulating layer 113 does not need to be too high, so that it can form a film quickly and with a relatively thick film thickness. Meanwhile, because the second insulating layer 113 has a lower density, it can better adapt to the thermal expansion and contraction effects of easily processed materials such as metals. Therefore, in this embodiment of the invention, it is necessary to make the first thickness of the first insulating layer 112 less than the second thickness of the second insulating layer 113, and the first density of the first insulating layer 112 greater than the second density of the second insulating layer 113.

[0054] After a period of use, the anti-conduction structure 11 of the wafer boat needs to be cleaned, for example, using an alkaline cleaning solution. Simultaneously, during operation, the plasma generated by the wafer boat not only etches or deposits the wafer but also bombards the anti-conduction structure 11. Since the first insulating layer 112 is relatively thin, it is easily damaged by the corrosion of the cleaning solution or the bombardment of plasma. The second insulating layer 113, located on the outer surface of the first insulating layer 112, can further protect against etching damage from the cleaning solution and plasma bombardment damage. In particular, the second insulating layer 113 is relatively thick and has a low density, effectively resisting and buffering plasma bombardment damage.

[0055] although Figure 6 and Figure 12 The embodiment shown only illustrates two insulating layers. Those skilled in the art should understand that the present invention is not limited thereto, and more insulating layers are also feasible.

[0056] Existing anti-conduction structures use ceramic materials, which are brittle. The minimum groove width typically produced is 0.3mm to 0.4mm. Due to the wide groove width, the ability to block gas diffusion into the groove is limited. Simultaneously, the minimum thickness of the formed fins also needs to be 0.3mm to 0.4mm, resulting in a limited number of fins per unit length, usually a maximum of 8-10, thus weakening the anti-conduction capability. Furthermore, ceramic materials are costly to process, prone to brittle fracture, and have poor maintenance capabilities. In the anti-conduction structure of this invention, the isolator body 111 is made of easily machinable materials such as metal. The fin thickness and groove width can be as low as 0.01mm, providing strong blocking ability against gas diffusion into the groove. More grooves can be formed per unit length, significantly improving the anti-conduction capability. Moreover, the processing cost is low, and it is less prone to damage during disassembly and cleaning, resulting in low maintenance costs. The anti-conduction structure of this invention effectively extends the time before conduction occurs. Testing shows that... Figure 1 Compared to existing anti-conduction structures made of ceramic materials, the conductivity time can be extended by more than 10 times.

[0057] During the PECVD process, the temperature inside the semiconductor process equipment's process chamber can reach 500°C. When the process gas includes silane, silane will undergo thermal decomposition at temperatures exceeding 450°C. Under low pressure conditions in the process recipe, the molecular free path is large. Although the anti-conduction structure in this embodiment has a large groove depth-to-width ratio, amorphous silicon deposition may still occur, thereby reducing the anti-conduction capability. In an optional embodiment of this invention, such as... Figures 7 to 9 As shown, in Figures 2 to 6 The anti-conduction structure shown includes an additional shielding layer 15. The shielding layer 15 is formed on the outer side of the fin 114 and surrounds the fin 114 to shield the groove 115. The extending direction of the shielding layer 15 is perpendicular to the extending direction of the fin 114. More specifically, continuing as... Figures 7 to 9As shown, fins 114 extend radially along the through-hole; the length of the outermost fin in the axial direction of the through-hole is greater than the length of the other fins. There can be two shielding layers 15, each connected to the top of the outermost fin in the axial direction of the through-hole. Various methods can be used to connect the shielding layers 15 to the fins, such as welding or riveting. In some alternative embodiments, the shielding layers 15 are integrally formed with the fins. The two shielding layers 15 extend towards each other in the axial direction of the through-hole, forming a gap 16 around the fin between them. Thus, the shielding layers 15 block most of the groove, and the gap 16 is sufficiently small. Under these conditions, very little gas can enter the gap 16, and even less can deposit into the groove 115, further enhancing the anti-conduction capability of the anti-conduction structure. In this embodiment, the shielding layers 15 can be made of insulating material or easily machinable materials such as metal. When the shielding layer 15 is made of easily processed materials such as metal, a first insulating layer and a second insulating layer also need to be formed on the surface of the shielding layer 15 to ensure its insulation performance. Please refer to the specific description of the first insulating layer and the second insulating layer above, which will not be repeated here.

[0058] In another optional embodiment of the present invention, such as Figure 13 and Figure 14 As shown, in Figures 10 to 12 The anti-conduction structure shown includes an additional shielding layer 15, with fins extending axially along the through-hole. The outermost fin in the radial direction of the through-hole is longer than the other fins. There are two shielding layers 15, each connected to the top of the outermost fin in the radial direction of the through-hole, for example, by welding or riveting. In some alternative embodiments, the shielding layer 15 is integrally formed with the fin. The two shielding layers 15 extend radially toward the through-hole, and gaps 16 surrounding the fins are formed between each shielding layer 15 and the main body of the isolator constituting the through-hole. Thus, the shielding layer 15 blocks most of the groove, and the gaps 16 are sufficiently small, further enhancing the anti-conduction capability of the anti-conduction structure.

[0059] like Figure 15 As shown, this embodiment of the invention also provides a method for manufacturing an anti-conduction structure between electrode boats, the method including the following steps:

[0060] S11. The isolator body is formed using an easily machinable material. Specifically, the isolator body has a through hole for a connecting rod to pass through, the connecting rod being used to pass through the isolator body and the electrode boat to fix the electrode boat. Multiple fins are formed on the isolator body, with grooves formed between adjacent fins. The isolator body is made of easily machinable materials such as metal. Further details regarding the isolator body can be found in the corresponding description above and will not be repeated here.

[0061] S13. A first insulating layer is formed on the outer surface of the body of the spacer, the first insulating layer having a first thickness and a first density. Further details regarding the first insulating layer can be found in the corresponding description above, and will not be repeated here.

[0062] S14. A second insulating layer is formed on the outer surface of the first insulating layer. The second insulating layer has a second thickness and a second density; wherein the first thickness is less than the second thickness, and the first density is greater than the second density. Further details regarding the second insulating layer can be found in the corresponding description above, and will not be repeated here.

[0063] In the manufacturing method of the anti-conduction structure in this embodiment of the invention, the main body of the anti-conduction structure is made of an easily machinable material, which allows for the fabrication of a groove structure with a large aspect ratio. This makes it difficult for gas to enter and deposit inside the groove. The thin film deposited on the surface of the anti-conduction structure by the vapor deposition process is broken at the locations corresponding to the grooves, preventing the formation of a continuous thin film that can connect the two electrode fins. This suppresses conduction between the electrode fins, thereby ensuring stable operation of the semiconductor process equipment. Furthermore, because the anti-conduction structure is made of an easily machinable material, the thickness of the fins in the groove structure is smaller, and the width of the groove is also smaller. More grooves can be formed per unit length. In other words, the thin film deposited on the surface of the anti-conduction structure by the vapor deposition process will have more breaks. As long as there is even one break, conduction between the electrode fins will not occur, thus greatly improving the anti-conduction capability of the anti-conduction structure. In addition, because the anti-conduction structure is made of an easily machinable material, brittle fracture will not occur, and the processing cost of the anti-conduction structure is reduced. It is also less prone to wear and tear during disassembly, cleaning, and maintenance, resulting in a long service life and low subsequent maintenance costs. Furthermore, the anti-conduction structure prevents the outward diffusion of atoms of easily machinable materials from the isolator body by setting a high-density and thin first insulating layer on the outer surface of the isolator body, thus avoiding metal contamination. A lower-density and thicker second insulating layer is set on the outer surface of the first insulating layer to ensure the insulation performance of the anti-conduction structure, block etching damage from cleaning fluid and plasma bombardment damage, and accommodate the thermal expansion and contraction effects of easily machinable materials. The anti-conduction structure manufactured by the manufacturing method of this embodiment effectively prolongs the time before conduction occurs, as tested and confirmed. Figure 1Compared to existing anti-conduction structures, the conduction time can be extended by more than 10 times.

[0064] In some optional embodiments of the present invention, the following may be included before step S13:

[0065] S12. Pre-process the body of the spacer. Specifically, this pre-processing step may include:

[0066] 1) Rinse the processed isolation component body with a detergent.

[0067] 2) Rinse the main body of the isolation component with deionized water.

[0068] 3) Immerse the main body of the separator in an alkaline solution. The temperature of the alkaline solution can be 50-60℃, and it can be a 1-3 mol / L KOH or NaOH solution. The immersion time can be 20-60 seconds.

[0069] 4) Rinse the main body of the isolation component with deionized water.

[0070] 5) Immerse the main body of the isolation component in an acidic solution. The acidic solution can be a 1-3 mol / L nitric acid solution, and the immersion time can be 30-90 seconds.

[0071] 6) Rinse the main body of the insulating component with deionized water.

[0072] In some optional embodiments of the present invention, step S13 can be performed using an anodizing process to form the first insulating layer. Specifically, in a suitable electrolyte, with the insulating component body as the anode and a graphite sheet (or lead mesh) as the cathode, the insulating component body is anodized under certain voltage and current conditions to form a dense oxide insulating layer such as aluminum oxide or titanium oxide on the surface of the insulating component body. By controlling the voltage, current, and time of the anodizing, the thickness of the first insulating layer can be effectively controlled.

[0073] For wafer boats, the temperature rises above 500℃ during the PECVD process. Due to the significant thermal expansion and contraction of the metal insulating material, the first insulating layer is preferably prepared using anodizing to ensure its diffusion isolation effect. The anodized first insulating layer better adapts to the expansion and contraction of the metal material, thus reducing the likelihood of cracking during wafer boat use and effectively preventing the outward diffusion of metal atoms from the insulating material body 111, thereby avoiding metal contamination.

[0074] In some optional embodiments of the present invention, step S14 can be performed using low-pressure chemical vapor deposition (LPCVD), sol-gel film formation, or atomic layer deposition (ALD) to form the second insulating layer. Preferably, LPCVD or sol-gel film formation is used to form the second insulating layer. LPCVD, sol-gel film formation, and ALD can all ensure that the molecular path of freedom is higher than the depth of the groove, thereby enabling film formation in grooves with high aspect ratios. ALD, LPCVD, and sol-gel film formation are all conventional processes in the art and will not be described in detail here.

[0075] In some optional embodiments of the present invention, the manufacturing method described above may further include: forming a shielding layer around the fin on the outer side of the fin to shield the groove. More details regarding the shielding layer can be found in the corresponding description above, and will not be repeated here. It should also be further noted that if the shielding layer 15 is made of an insulating material, it can be formed after step S14. If the shielding layer 15 is made of an easily machinable material such as metal, it can be formed before step S12, thereby pre-treating the shielding layer and sequentially forming a first insulating layer and a second insulating layer on the outer surface of the shielding layer to ensure its insulating performance. The shielding layer can be formed by welding, riveting, or integral molding, and no limitation is made here.

[0076] Accordingly, such as Figure 16 and Figure 17 As shown, this embodiment of the invention also provides a wafer boat, which may include at least two electrode boats 12, an anti-conduction structure 11 disposed between two adjacent electrode boats, and a connecting rod 13. The connecting rod 13 passes through each electrode boat 12 and the anti-conduction structure 11 to fix the electrode boat 12. For example, nuts can be used to fix the connecting rod 13 at both ends. The anti-conduction structure 11 can be, for example, the anti-conduction structure in the above embodiment. The electrode boats 12 of the wafer boat can be made of graphite material, hence the wafer boat is also referred to in the art as a graphite boat. Each electrode boat 12 can carry multiple wafers.

[0077] like Figure 18 As shown, this embodiment of the invention also provides a semiconductor process apparatus, which may include: a process cavity 21, a wafer boat 22, and a support mechanism 23. The wafer boat 22 and the support mechanism 23 are disposed within the process cavity 21. The support mechanism 23 is configured to support the wafer boat 22, and the support mechanism 23 may include, for example, at least two support rods to support the wafer boat 22. The wafer boat 22 may, for example, be the wafer boat described in the above embodiment.

[0078] Furthermore, the semiconductor process equipment may also include radio frequency electrodes 24 to apply radio frequency power between two adjacent electrode boats, causing the reactive gas between the two adjacent electrode boats to be ionized to form plasma, thereby enabling deposition or etching processes on the wafer carried by the electrode boats. In an alternative embodiment, the semiconductor process equipment may be, for example, a tubular PECVD equipment.

[0079] For specific details regarding the aforementioned wafer boats and semiconductor process equipment, please refer to the relevant references. Figures 2 to 14 The relevant descriptions and effects in the illustrated embodiments are for understanding purposes only and will not be repeated here.

[0080] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. A structure for preventing conduction between electrode boats, characterized in that, include: The isolator body has a through hole for the connecting rod to pass through, and multiple fins are formed on the isolator body, with a groove formed between two adjacent fins. The isolator body is made of metal material. A first insulating layer is disposed on the outer surface of the main body of the insulating member, and the first insulating layer has a first thickness and a first density; A second insulating layer is disposed on the outer surface of the first insulating layer, the second insulating layer having a second thickness and a second density; wherein the first thickness is less than the second thickness, and the first density is greater than the second density. The first insulating layer is made of oxide or nitride, and the thickness of the first insulating layer is from 20 nm to 100 μm; or The second insulating layer is made of oxide or nitride and has a thickness of 50 nm to 250 μm.

2. The anti-conduction structure according to claim 1, characterized in that, The first insulating layer comprises at least one of aluminum oxide, titanium oxide, aluminum nitride, and titanium nitride; or The second insulating layer comprises at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, and silicon carbide.

3. The anti-conduction structure according to claim 1, characterized in that, The first insulating layer is made using an anodizing process; or The second insulating layer is made using low-pressure chemical vapor deposition, sol-gel film formation, or atomic layer deposition.

4. The anti-conduction structure according to claim 1, characterized in that, The depth-to-width ratio of the groove is greater than 100; or The width of the fin is less than 0.1 mm.

5. The anti-conduction structure according to any one of claims 1 to 4, characterized in that, Also includes: A shielding layer is formed on the outside of the fins and disposed around the fins to shield the grooves.

6. The anti-conduction structure according to claim 5, characterized in that, The extension direction of the shielding layer is perpendicular to the extension direction of the fins.

7. The anti-conduction structure according to claim 6, characterized in that, The fins extend radially along the through-hole; the outermost fin in the axial direction of the through-hole has a longer length than the other fins. There are two shielding layers, each connected to the top of the outermost fin in the axial direction of the through hole, and the two shielding layers extend towards each other in the axial direction of the through hole, with a gap forming between the two shielding layers around the fin.

8. The anti-conduction structure according to claim 6, characterized in that, The fins extend along the axial direction of the through hole; the outermost fin in the radial direction of the through hole has a longer length than the other fins. There are two shielding layers. The two shielding layers are respectively connected to the top of the outermost fin in the radial direction of the through hole, and the two shielding layers extend toward the through hole in the radial direction of the through hole. A gap is formed between the two shielding layers and the main body of the isolation member constituting the through hole, surrounding the fin.

9. A method for manufacturing an anti-conduction structure between electrode boats, characterized in that, include: The main body of the isolation component is formed by processing metal material. The main body of the isolation component has a through hole for the connecting rod to pass through, and multiple fins are formed on the main body of the isolation component, with a groove formed between two adjacent fins. A first insulating layer is formed on the outer surface of the main body of the insulating member, the first insulating layer having a first thickness and a first density; A second insulating layer is formed on the outer surface of the first insulating layer, the second insulating layer having a second thickness and a second density; wherein the first thickness is less than the second thickness, and the first density is greater than the second density; The first insulating layer is made of oxide or nitride, and the thickness of the first insulating layer is from 20 nm to 100 μm; or The second insulating layer is made of oxide or nitride and has a thickness of 50 nm to 250 μm.

10. The manufacturing method according to claim 9, characterized in that, The formation of the first insulating layer on the outer surface of the insulating member body includes: The insulating body is anodized to form the first insulating layer; or The formation of the second insulating layer on the outer surface of the first insulating layer includes: The second insulating layer is formed using low-pressure chemical vapor deposition, sol-gel film formation, or atomic layer deposition.

11. The manufacturing method according to claim 9, characterized in that, Also includes: A shielding layer is formed around the outside of the fin to shield the groove.

12. A wafer boat, characterized in that, include: At least two electrode boats; The anti-conduction structure according to any one of claims 1 to 8 is disposed between two adjacent electrode boats; A connecting rod passes through each of the electrode boats and each of the anti-conduction structures to fix the electrode boats.

13. A semiconductor process apparatus, characterized in that, include: Process cavity; The wafer boat of claim 12 is disposed within the process cavity; A support mechanism is disposed within the process cavity to support the wafer boat.

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