Semiconductor memory device

Abstract

A semiconductor storage device suitable for thinning is provided. A semiconductor storage device of an embodiment includes a substrate, an electronic component, and a holding component. The substrate has a first surface. The electronic component has a component main body disposed at a position deviated from the substrate in a direction parallel to the first surface, and a first lead line protruding from the component main body in a direction approaching the substrate. The holding component is fixed to the substrate and holds the first lead line.

Description

[0001] Related applications

[0002] This application claims priority to Japanese Patent Application No. 2022-024843 (filed February 21, 2022) and Japanese Patent Application No. 2022-065730 (filed April 12, 2022). This application incorporates the entire contents of the basic applications by reference to them. Technical Field

[0003] Embodiments of the present invention relate to semiconductor memory devices. Background Technology

[0004] A semiconductor device is known, which includes a substrate having a through hole and electronic components having leads inserted into the through hole. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a semiconductor memory device suitable for thinning.

[0006] The semiconductor memory device of the embodiment includes a substrate, electronic components, and a holding member. The substrate has a first surface. The electronic component has: a component body disposed at a position offset from the substrate in a direction parallel to the first surface; and a first lead protruding from the component body in a direction approaching the substrate. The holding member is fixed to the substrate and holds the first lead. Attached Figure Description

[0007] Figure 1 This is a perspective view of a semiconductor memory device according to the first embodiment.

[0008] Figure 2 This is a perspective view of the substrate unit according to the first embodiment.

[0009] Figure 3 This is a diagram illustrating the mounting structure of the capacitor according to the first embodiment.

[0010] Figure 4 This is a diagram used to illustrate the positions of the first lead and the second lead in the first embodiment.

[0011] Figure 5 It is Figure 3 The enlarged cross-sectional view shows the area enclosed by the F5 line.

[0012] Figure 6 This is a diagram illustrating the installation structure of a first modified example of the first embodiment.

[0013] Figure 7 This is a diagram illustrating the installation structure of a second variation of the first embodiment.

[0014] Figure 8 This is a diagram illustrating the installation structure of a third variation of the first embodiment.

[0015] Figure 9 This is a diagram illustrating the installation structure of the fourth variation of the first embodiment.

[0016] Figure 10 This is a diagram illustrating the installation structure of the fifth variation of the first embodiment.

[0017] Figure 11 This is a diagram illustrating another way of describing a fifth variation of the first embodiment.

[0018] Figure 12 This is a diagram illustrating the installation structure of the sixth variation of the first embodiment.

[0019] Figure 13 This is a diagram illustrating the installation structure of the seventh variation of the first embodiment.

[0020] Figure 14 This is a diagram illustrating the mounting structure of the capacitor according to the second embodiment.

[0021] Figure 15 This is a diagram illustrating the mounting structure of the capacitor according to the third embodiment.

[0022] Figure 16 This is a top view illustrating an example of the assembly method of the mounting structure according to the third embodiment.

[0023] Figure 17 This is a diagram illustrating the mounting structure of the capacitor according to the fourth embodiment.

[0024] Figure 18 (a) to (c) are cross-sectional views showing an example of the assembly method of the mounting structure of the fourth embodiment.

[0025] Figure 19 This is a diagram illustrating the installation structure of the first modified example of the fourth embodiment.

[0026] Figure 20 This is a diagram illustrating the installation structure of a second variation of the fourth embodiment.

[0027] Figure 21 This is a diagram illustrating the installation structure of the third variation of the fourth embodiment.

[0028] Figure 22 This is a diagram illustrating the mounting structure of the capacitor according to the fifth embodiment.

[0029] Figure 23This is a diagram illustrating an example of the lead installation method according to the fifth embodiment.

[0030] Figure 24 This is a diagram illustrating the installation structure of the first modified example of the fifth embodiment.

[0031] Figure 25 This is a diagram illustrating the installation structure of a second variation of the fifth embodiment.

[0032] Figure 26 This is a diagram illustrating the installation structure of the third variation of the fifth embodiment.

[0033] Figure 27 This is a side view showing the retaining member of the third variation of the fifth embodiment, disassembled.

[0034] Figure 28 This is a diagram illustrating the installation structure of the fourth variation of the fifth embodiment.

[0035] Figure 29 This is a perspective view showing the installation structure of the fourth variation of the fifth embodiment, disassembled and illustrated.

[0036] Figure 30 This is a diagram illustrating the mounting structure of the capacitor according to the sixth embodiment.

[0037] Figure 31 This is a diagram illustrating the installation structure of the first modified example of the sixth embodiment.

[0038] Figure 32 This is a diagram illustrating the installation structure of a second variation of the sixth embodiment.

[0039] Figure 33 This is a diagram illustrating the mounting structure of the capacitor according to the seventh embodiment.

[0040] Figure 34 This is a diagram illustrating the installation structure of a modified example of the seventh embodiment.

[0041] Figure 35 This is a top view showing the substrate unit of the eighth embodiment.

[0042] Figure 36 This is a diagram illustrating the mounting structure of the capacitor according to the eighth embodiment.

[0043] Figure 37 It is along Figure 36 The cross-sectional view of the installation structure along line F37-F37 is shown.

[0044] Figure 38 This is a diagram illustrating the installation structure of the first modified example of the eighth embodiment.

[0045] Figure 39 This is a diagram illustrating the installation structure of the second variation of the eighth embodiment.

[0046] Figure 40 This is a diagram illustrating the mounting structure of the capacitor according to the ninth embodiment.

[0047] Figure 41 This is a diagram illustrating the installation structure of the first modified example of the ninth embodiment.

[0048] Figure 42 This is a diagram illustrating the installation structure of the second variation of the ninth embodiment.

[0049] Figure 43 This is a diagram illustrating the mounting structure of the capacitor according to the tenth embodiment.

[0050] Figure 44 It is along Figure 43 The cross-sectional view of the installation structure along line F44-F44 is shown.

[0051] Figure 45 This is a diagram illustrating the installation structure of the first modified example of the tenth embodiment.

[0052] Figure 46 This is a diagram illustrating the installation structure of the second variation of the tenth embodiment.

[0053] Figure 47 This is a diagram illustrating the mounting structure of the capacitor according to the eleventh embodiment.

[0054] Figure 48 It is along Figure 47 The cross-sectional view of the installation structure along line F48-F48 is shown.

[0055] Figure 49 This is a diagram illustrating the installation structure of the first modified example of the eleventh embodiment.

[0056] Figure 50 This is a diagram illustrating the installation structure of the second variation of the eleventh embodiment. Detailed Implementation

[0057] Hereinafter, a semiconductor memory device according to an embodiment will be described with reference to the accompanying drawings. In the following description, components having the same or similar functions will be labeled with the same reference numerals. Furthermore, repeated descriptions of these components will sometimes be omitted. In this application, "parallel" or "orthogonal" may also include cases where they are "generally parallel" or "generally orthogonal," respectively. In this application, "overlap" refers to the virtual projected images of two objects overlapping each other, and may also include cases where the two objects are not directly connected (e.g., where other components exist between the two objects). In this application, "connection" is not limited to mechanical connections, and may also include electrical connections. That is, "connection" is not limited to direct connection with objects, and may also include connections where other components are sandwiched in between.

[0058] Here, we first define the +X direction, -X direction, +Y direction, -Y direction, +Z direction, and -Z direction. The +X direction, -X direction, +Y direction, and -Y direction are related to the first surface S1 of the substrate 21 (refer to...) described later. Figure 2 The +X direction is parallel to the direction from the second end 10b of the frame 10 (described later) towards the first end 10a (see reference). Figure 1 The -X direction is the direction opposite to the +X direction. Without distinguishing between the +X and -X directions, it is simply referred to as the "X direction". The +Y and -Y directions are directions that intersect (e.g., are orthogonal) the X direction. The +Y direction is the direction from the fourth end 10d of the frame 10 described later towards the third end 10c (see reference). Figure 1 The -Y direction is the direction opposite to the +Y direction. Without distinguishing between the +Y and -Y directions, it is simply referred to as the "Y direction". The +Z and -Z directions are directions that intersect (e.g., are orthogonal) the X and Y directions, and are the thickness directions of the substrate 21 described later. The +Z direction is the direction from the substrate unit 20 described later toward the first main wall 11 of the frame 10 (see reference). Figure 1 The -Z direction is the opposite of the +Z direction. When there is no distinction between the +Z and -Z directions, it is simply referred to as the "Z direction".

[0059] (First Implementation)

[0060] <1. Overall Structure of Semiconductor Memory Devices>

[0061] Reference Figures 1 to 5The semiconductor storage device 1 according to the first embodiment will be described. The semiconductor storage device 1 is, for example, a storage device such as an SSD (Solid State Drive). The semiconductor storage device 1 may also be referred to as a "memory system". The semiconductor storage device 1 is installed in information processing devices such as servers and personal computers, and is used as a storage area of ​​the information processing device. In this application, the information processing device in which the semiconductor storage device 1 is installed is referred to as a "host device".

[0062] Figure 1 This is a perspective view of a semiconductor memory device 1. The semiconductor memory device 1 includes, for example, a frame 10 and a substrate unit 20.

[0063] <1.1 Framework>

[0064] The frame 10 is, for example, a flat rectangular box. The frame 10 has a first end 10a and a second end 10b, which are a pair of ends separated along the length direction (X direction) of the frame 10. The first end 10a has a connector 22 for external connection to the substrate unit 20 described later (see reference). Figure 2 An opening (not shown) is exposed to the outside of the frame 10. The frame 10 has a third end 10c and a fourth end 10d, which are a pair of ends separated in the short side direction (Y direction) of the frame 10.

[0065] The frame 10 has a first main wall 11, a second main wall 12, a first side wall 13, a second side wall 14, a third side wall 15, and a fourth side wall 16. The first main wall 11 is a wall along both the X and Y directions. The first main wall 11 is located on the +Z direction side relative to the substrate unit 20. The second main wall 12 is a wall along both the X and Y directions. The second main wall 12 is located on the -Z direction side relative to the substrate unit 20. The first side wall 13, second side wall 14, third side wall 15, and fourth side wall 16 are walls along the Z direction, extending between the ends of the first main wall 11 and the second main wall 12. The first side wall 13 is a side wall located at the end of the frame 10 on the +X direction side. The second side wall 14 is a side wall located at the end of the frame 10 on the -X direction side. The third side wall 15 is a side wall located at the end of the frame 10 on the +Y direction side. The fourth side wall 16 is a side wall located at the end of the frame 10 on the -Y direction side. The base plate unit 20 is housed inside the frame 10.

[0066] <1.2 Substrate Unit>

[0067] Figure 2This is a perspective view of the substrate unit 20. The substrate unit 20 includes, for example, a substrate 21, an external connection connector 22, a controller 23, multiple DRAM (Dynamic Random Access Memory) 24, multiple NAND type semiconductor memory devices 25 (hereinafter referred to as "NAND 25"), and multiple capacitors 26.

[0068] Substrate 21 is a plate component along the X and Y directions. Substrate 21 is a printed circuit board, having an insulating substrate 21i and a wiring pattern 21w disposed on the insulating substrate 21i (see reference). Figure 3 The substrate 21 has a first surface S1 and a second surface S2 located on the side opposite to the first surface S1. The first surface S1 faces the +Z direction. The second surface S2 faces the -Z direction.

[0069] The external connection connector 22 has multiple metal terminals that can be connected to the connector of the host device. The external connection connector 22 is located at the end of the substrate 21 on the +X direction side.

[0070] The controller 23 provides unified control over the entire semiconductor memory device 1. The controller 23 is, for example, a semiconductor package containing a System-on-a-Chip (SoC), which integrates host interface circuitry corresponding to the host device, control circuitry for controlling multiple DRAMs 24, and control circuitry for controlling multiple NAND flash units 25 onto a single semiconductor chip. The controller 23 is, for example, mounted on the second surface S2 of the substrate 21.

[0071] DRAM 24 is a semiconductor package containing a volatile semiconductor memory chip. DRAM 24 is a data buffer that temporarily stores write data received from a host device or read data read from NAND 25. DRAM 24 is mounted, for example, on the first surface S1 of substrate 21. DRAM 24 may also be located inside controller 23.

[0072] Multiple NAND 25s are arranged in the X and Y directions. NAND 25 is a semiconductor package containing non-volatile semiconductor memory chips. NAND 25s are, for example, mounted on the first surface S1 and the second surface S2 of substrate 21. NAND 25 is an example of a "semiconductor memory component".

[0073] Capacitor 26 serves as a power backup for data protection in the event of an unexpected power outage. For example, in the event of an unexpected power cut from the host device, capacitor 26 continuously supplies power to controller 23, multiple DRAMs 24, and multiple NAND flash units 25 for a certain period of time. Capacitor 26 is, for example, an electrolytic capacitor. More specifically, capacitor 26 is, for example, an aluminum electrolytic capacitor. However, capacitor 26 is not limited to the above examples. Capacitor 26 is an example of an "electronic component."

[0074] <2. Capacitor Installation Structure>

[0075] Next, the mounting structure of capacitor 26 will be described. Hereinafter, the mounting structure of capacitor 26 arranged side-by-side with the +Y direction side end of substrate 21 will be described as an example. However, capacitor 26 may also be arranged side-by-side with the -Y direction side end or the X direction side end of substrate 21.

[0076] Figure 3 This is a diagram illustrating the mounting structure of capacitor 26. The semiconductor memory device 1 includes a substrate 21, a first bonding portion 51, a second bonding portion 52, a first holding member 61, a second holding member 62, a third bonding portion 63, and a fourth bonding portion 64, as components related to the mounting structure of capacitor 26.

[0077] <2.1 Capacitors>

[0078] First, the capacitor 26 will be described. The capacitor 26, for example, has a component body 30, a first lead 31, and a second lead 32.

[0079] The component body 30 is the part that performs the main function of the electronic component. For example, the component body 30 of the capacitor 26 is the part that accumulates charge by applying a DC voltage. The component body 30 may contain, for example, a metal, a dielectric, or an electrolyte that serves as an electrode. The component body 30 is cylindrical with a diameter larger than the thickness of the substrate 21.

[0080] The component body 30 is disposed at a position offset from the substrate 21 in a direction parallel to the first surface S1 of the substrate 21 (e.g., the Y direction). In other words, the component body 30 is disposed at a position that does not overlap with the substrate 21 when viewed in the thickness direction (Z direction) of the substrate 21. In this embodiment, at least a portion of the component body 30 is parallel to the substrate 21 in the Y direction. For example, the center C of the component body 30 in the Z direction is parallel to the substrate 21 in the Y direction.

[0081] The first lead 31 is a first terminal for electrical connection. The first lead 31 protrudes from the component body 30 in a direction close to the substrate 21 (e.g., the -Y direction). The first lead 31 is located in the Z direction further towards the +Z direction side than the first surface S1 of the substrate 21. At least a portion of the first lead 31 overlaps with the first surface S1 of the substrate 21 in the Z direction. At least a portion of the first lead 31 extends parallel to the first surface S1 of the substrate 21. In this embodiment, the first lead 31 extends linearly from the component body 30 along its entire length. The first lead 31 includes a first lead portion 31a joined by the first engagement portion 51 (described later) and a second lead portion 31b held by the first holding member 61 (described later). The second lead portion 31b is located between the first lead portion 31a and the component body 30.

[0082] The second lead 32 is a second terminal for electrical connection. The second lead 32 has a different polarity than the first lead 31. The second lead 32 and the first lead 31 protrude independently from the component body 30 in a direction approaching the substrate 21 (e.g., the -Y direction). In the Z direction, the second lead 32 is located further towards the -Z direction than the second surface S2 of the substrate 21. In other words, in the Z direction, the second lead 32 is located on the opposite side of the first lead 31 relative to the substrate 21. At least a portion of the second lead 32 overlaps with the second surface S2 of the substrate 21 in the Z direction. At least a portion of the second lead 32 extends parallel to the second surface S2 of the substrate 21. In this embodiment, the second lead 32 extends linearly from the component body 30 along its entire length. The second lead 32 includes a first lead portion 32a engaged by the second engagement portion 52 (described later) and a second lead portion 32b held by the second holding member 62 (described later). The second lead portion 32b is located between the first lead portion 32a and the component body 30.

[0083] Figure 4 This diagram illustrates the positions of the first lead 31 and the second lead 32 relative to the substrate 21. Additionally, Figure 4 The single-dotted lines shown represent pairs of first leads 31 and second leads 32 included in capacitor 26 with the same orientation. In this embodiment, the orientation of the first leads 31 and second leads 32 arranged in the Z direction (in...) Figure 4 (The orientation is indicated by a double-dotted line). Capacitor 26 rotates in the direction of arrow A, thereby aligning the first lead 31 and the second lead 32 in an orientation tilted relative to the Z direction (in...). Figure 4The orientation (represented by solid lines) is configured such that even when the distance between the first lead 31 and the second lead 32 is greater than the thickness of the substrate 21, the first lead 31 is positioned near the first surface S1 of the substrate 21, and the second lead 32 is positioned near the second surface S2 of the substrate 21.

[0084] <2.2 Substrate>

[0085] return Figure 3 The substrate 21 will be described below. The substrate 21 has, for example, a first pad 41, a second pad 42, a first through hole 43, a first land 44, a second through hole 45, and a second land 46.

[0086] The first pad 41 is a conductive portion for surface mounting on the first surface S1 of the substrate 21. The first pad 41 is connected to the wiring pattern 21w of the substrate 21. The first pad 41 overlaps with the first lead portion 31a of the first lead 31 of the capacitor 26 in the Z direction. The first lead 31 of the capacitor 26 is electrically connected to the first pad 41.

[0087] The second pad 42 is a conductive portion for surface mounting on the second surface S2 of the substrate 21. The second pad 42 is connected to the wiring pattern 21w of the substrate 21. The second pad 42 overlaps with the first lead portion 32a of the second lead 32 of the capacitor 26 in the Z direction. The second lead 32 of the capacitor 26 is electrically connected to the second pad 42.

[0088] The first through hole 43 is a through hole that penetrates the substrate 21 in the Z direction. The first through hole 43 overlaps with the first retaining member 61, which will be described later, in the Z direction. The first retaining member 61 is mounted in the first through hole 43. The first connecting plate 44 is a conductive portion provided on the second surface S2 of the substrate 21. The first connecting plate 44 is provided around the first through hole 43.

[0089] The second through hole 45 is a through hole that penetrates the substrate 21 in the Z direction. The second through hole 45 overlaps with the second holding member 62, which will be described later, in the Z direction. The second holding member 62 is mounted in the second through hole 45. The second connecting plate 46 is a conductive portion provided on the first surface S1 of the substrate 21. The second connecting plate 46 is provided around the second through hole 45.

[0090] <2.3 First Joint>

[0091] A first bonding portion 51 is provided on the first pad 41, electrically connecting the first lead portion 31a of the first lead 31 to the first pad 41. The first bonding portion 51 is an electrical connection portion provided on the outside of the first retaining member 61. The first bonding portion 51 is formed by a conductive bonding material (solder or conductive paste, etc.). The first bonding portion 51 may be a component whose main purpose is to make an electrical connection between the first lead 31 and the first pad 41, and may not have the mechanical strength to retain the capacitor 26.

[0092] <2.4 Second Joint>

[0093] The second bonding portion 52 is provided on the second pad 42, electrically connecting the first lead portion 32a of the second lead 32 to the second pad 42. The second bonding portion 52 is an electrical connection portion provided on the outside of the second retaining member 62. The second bonding portion 52 is formed by a conductive bonding material (solder or conductive paste, etc.). The second bonding portion 52 may be a component whose main purpose is to provide an electrical connection between the second lead 32 and the second pad 42, and may not have the mechanical strength to retain the capacitor 26.

[0094] <2.5 First Holding Component>

[0095] The first holding member 61 is a holding member that holds the first lead 31. The first holding member 61 is fixed to the substrate 21, and the capacitor 26 is fixed to the substrate 21 by holding the first lead 31. The first holding member 61 is, for example, made of metal. In this embodiment, the first holding member 61 is placed on the first surface S1 of the substrate 21. The maximum height H1 of the first holding member 61 in the +Z direction relative to the first surface S1 of the substrate 21 is smaller than the maximum height H2 of the capacitor 26 in the +Z direction relative to the first surface S1 of the substrate 21.

[0096] Figure 5 It is Figure 3 The cross-sectional view shown in the enlarged area enclosed by line F5 is shown below. The first retaining member 61 has, for example, a retaining body 61m and a protrusion 61p. The retaining body 61m is a cuboid along the first surface S1 of the substrate 21. The retaining body 61m has a through hole 61h extending along the Y direction. The first lead 31 is inserted into the through hole 61h along the Y direction. The retaining body 61m retains the second lead portion 31b of the first lead 31 by inserting the first lead 31 into the through hole 61h. The retaining body 61m is an example of a "second portion". The through hole 61h is an example of a "receiving portion capable of retaining a lead" and a "first through hole".

[0097] The protrusion 61p is connected to the retaining body 61m. The protrusion 61p protrudes from the retaining body 61m in the -Z direction. The protrusion 61p is inserted into the first through hole 43 of the substrate 21. The front end of the protrusion 61p protrudes in the -Z direction relative to the second surface S2 of the substrate 21. The protrusion 61p is made of metal such as brass, copper, or iron. The protrusion 61p can also be a metal screw. The protrusion 61p, as a screw, can also be fixed to the substrate 21 by engaging with a screw hole provided in the substrate 21 or a fixing member (e.g., a nut) provided on the second surface S2 side of the substrate 21. In this case, the third joint 63 described later can also be omitted.

[0098] <2.6 Second Holding Component>

[0099] return Figure 3 The second holding member 62 will be described. The second holding member 62 is a holding member that holds the second lead 32. The second holding member 62 is fixed to the substrate 21, and the capacitor 26 is fixed to the substrate 21 by holding the second lead 32. The second holding member 62 is provided independently of the first holding member 61. The second holding member 62 is, for example, made of metal. In this embodiment, the second holding member 62 is placed on the second surface S2 of the substrate 21. That is, the second holding member 62 is located on the opposite side of the first holding member 61 in the Z direction relative to the substrate 21. The maximum height H3 of the second holding member 62 in the -Z direction relative to the second surface S2 of the substrate 21 is smaller than the maximum height H4 of the capacitor 26 in the -Z direction relative to the second surface S2 of the substrate 21.

[0100] The second retaining member 62 has, for example, a retaining body 62m and a protrusion 62p. The retaining body 62m is a cuboid along the second surface S2 of the substrate 21. The retaining body 62m has a through hole 62h extending in the Y direction. The second lead 32 is inserted into the through hole 62h in the Y direction. The retaining body 62m retains the second lead portion 32b of the second lead 32 by inserting the second lead 32 into the through hole 62h. The retaining body 62m is an example of a "second portion". The through hole 62h is an example of a "receiving portion capable of retaining the lead" and a "first through hole".

[0101] The protrusion 62p is connected to the retaining body 62m. The protrusion 62p protrudes from the retaining body 62m in the +Z direction. The protrusion 62p is inserted into the second through hole 45 of the substrate 21. The front end of the protrusion 62p protrudes in the +Z direction relative to the first surface S1 of the substrate 21. The protrusion 62p is made of metal such as brass, copper, or iron. The protrusion 62p can also be a metal screw. The protrusion 62b, which is a screw, can also be fixed to the substrate 21 by engaging with a screw hole provided in the substrate 21 or a fixing member (e.g., a nut) provided on the first surface S1 side of the substrate 21. In this case, the fourth joint 64 described later can also be omitted.

[0102] <2.7 Third Joint>

[0103] A third joint 63 is provided on the first connecting plate 44, and fixes the protrusion 61p of the first retaining member 61 to the first connecting plate 44. The third joint 63 is, for example, a conductive bonding material (solder or conductive paste, etc.). However, the third joint 63 may also be a non-conductive adhesive, etc.

[0104] <2.8 Fourth Joint>

[0105] A fourth joint 64 is provided on the second connecting plate 46, fixing the protrusion 62p of the second retaining member 62 to the second connecting plate 46. The fourth joint 64 is, for example, a conductive bonding material (solder or conductive paste, etc.). However, the fourth joint 64 may also be a non-conductive adhesive, etc.

[0106] <3. Manufacturing method of substrate unit>

[0107] Next, an example of the manufacturing method of the substrate unit 20 will be described. First, the protrusion 61p of the first holding member 61 is inserted into the first through hole 43 of the substrate 21, and the first holding member 61 is placed on the first surface S1 of the substrate 21. Next, a third engagement portion 63 is provided between the protrusion 61p of the first holding member 61 and the first connecting plate 44, thereby fixing the first holding member 61 to the substrate 21. Similarly, the protrusion 62p of the second holding member 62 is inserted into the second through hole 45 of the substrate 21, and the second holding member 62 is placed on the second surface S2 of the substrate 21. Next, a fourth engagement portion 64 is provided between the protrusion 62p of the second holding member 62 and the second connecting plate 46, thereby fixing the second holding member 62 to the substrate 21.

[0108] Next, the first lead 31 of the capacitor 26 is inserted into the through hole 61h of the first holding member 61, and the second lead 32 of the capacitor 26 is inserted into the through hole 62h of the second holding member 62. Thus, the first lead 31 is held by the first holding member 61, and the second lead 32 is held by the second holding member 62. Therefore, in the bonding process where the first lead 31 and the second lead 32 are bonded to the substrate 21 (described later), the positional offset of the first lead 31 relative to the first pad 41 and the positional offset of the second lead 32 relative to the second pad 42 are suppressed.

[0109] Furthermore, as a bonding process for joining the first lead 31 to the substrate 21, a first bonding portion 51 is provided to join the first lead portion 31a of the first lead 31 to the first pad 41, thereby electrically connecting the first lead 31 to the first pad 41. For example, the first bonding portion 51 can also be provided through the same reflow soldering process as the bonding of electronic components (e.g., DRAM 24 and NAND 25) mounted on the first surface S1 of the substrate 21. Similarly, as a bonding process for joining the second lead 32 to the substrate 21, a second bonding portion 52 is provided to join the first lead portion 32a of the second lead 32 to the second pad 42, thereby electrically connecting the second lead 32 to the second pad 42. For example, the second bonding portion 52 can also be provided through the same reflow soldering process as the bonding of electronic components (e.g., controller 23 and NAND 25) mounted on the second surface S2 of the substrate 21.

[0110] <4. Advantages>

[0111] In this embodiment, the semiconductor memory device 1 includes a substrate 21, a capacitor 26, and a first holding member 61. The capacitor 26 has a component body 30 disposed at a position offset from the substrate 21 in the Y direction, and a first lead 31 protruding from the component body 30 in a direction approaching the substrate 21. The first holding member 61 is fixed to the substrate 21 and holds the first lead 31. With this configuration, since the component body 30 of the capacitor 26 is disposed at a position offset from the substrate 21, the frame 10 can be made thinner compared to the case where the substrate 21 and the component body 30 of the capacitor 26 are disposed overlapping in the Z direction. Thus, the semiconductor memory device 1 can be made thinner.

[0112] Furthermore, by providing the first retaining member 61, positional misalignment of the first lead 31 during the manufacturing of the semiconductor memory device 1 is suppressed. This improves the workability of the bonding process where the first lead 31 is bonded to the substrate 21, thereby enhancing the manufacturability of the semiconductor memory device 1. Additionally, by providing the first retaining member 61, the concentration of vibration and shock loads on the first bonding portion 51 is suppressed, improving the vibration and shock resistance of the semiconductor memory device 1. Moreover, by providing the first retaining member 61, the shape of the first lead 31 and the bonding method of the first lead 31 can be bonded to a first pad 41 without a through-hole, increasing the degree of freedom. These features contribute to the thinning of the semiconductor memory device 1 and / or the improvement of its manufacturability.

[0113] In this embodiment, at least a portion of the capacitor 26 is arranged side-by-side with the substrate 21 in a direction parallel to the first surface S1 of the substrate 21. With this configuration, further thinning of the semiconductor memory device 1 can be achieved.

[0114] In this embodiment, the first lead 31 includes a first lead portion 31a and a second lead portion 31b located between the first lead portion 31a and the component body 30. A first bonding portion 51 electrically connects the first lead portion 31a of the first lead 31 to the substrate 21. A first holding member 61 holds the second lead portion 31b of the first lead 31. With this configuration, compared to the case where the first lead portion 31a of the first lead 31 is held by the first holding member 61, the portion closer to the component body 30 is held by the first holding member 61. Therefore, it is possible to further suppress vibration and shock loads concentrated on the first bonding portion 51, thereby further improving the vibration resistance and shock resistance of the semiconductor memory device 1.

[0115] From another perspective, in this embodiment, the semiconductor memory device 1 includes a substrate 21 and a capacitor 26. The substrate 21 has a first surface S1 and a second surface S2 located on the side opposite to the first surface S1. The capacitor 26 has a component body 30, a first lead 31, and a second lead 32. The component body 30 is disposed at a position offset from the substrate 21 in a direction parallel to the first surface S1 of the substrate 21. The first lead 31 includes a portion protruding from the component body 30 in a direction close to the substrate 21 and overlapping the first surface S1 of the substrate 21 in the thickness direction of the substrate 21, and is electrically connected to the substrate 21. The second lead 32 includes a portion protruding from the component body 30 in a direction close to the substrate 21 and located on the side opposite to the first lead 31 relative to the substrate 21, and is electrically connected to the substrate 21. With this configuration, compared to the case where the substrate 21 and the component body 30 of the capacitor 26 are disposed overlapping in the Z direction, the frame 10 can be made thinner. Therefore, the semiconductor memory device 1 can be made thinner.

[0116] <5. Variations>

[0117] Next, variations of the first embodiment will be described. In each variation, the configuration other than that described below is the same as that of the first embodiment described above. The variations described below can also be implemented by appropriately combining the configurations of other variations and / or other embodiments.

[0118] (First variation)

[0119] Figure 6 This is a diagram illustrating the mounting structure of the capacitor 26 in the first modified example. The semiconductor storage device 1A of the first modified example has a first holding member 61A instead of the first holding member 61, and a second holding member 62A instead of the second holding member 62.

[0120] The protrusion 61p of the first retaining member 61A is positioned offset from the through hole 61h in the X direction. At least a portion of the protrusion 61p protrudes in the -Z direction from a region in the retaining body 61m where the through hole 61h is not provided. Similarly, the protrusion 62p of the second retaining member 62A is positioned offset from the through hole 62h in the X direction. At least a portion of the protrusion 62p protrudes in the +Z direction from a region in the retaining body 62m where the through hole 62h is not provided. With this configuration, the rigidity of both the first retaining member 61A and the second retaining member 62A can be improved.

[0121] (Second variation)

[0122] Figure 7This is a diagram illustrating the mounting structure of the capacitor 26 in the second modification. The semiconductor storage device 1B in the second modification has a first holding member 61B instead of the first holding member 61, and a second holding member 62B instead of the second holding member 62.

[0123] The substrate 21 has a third pad 71 in place of the first through hole 43 and the first connecting pad 44. The third pad 71 is a conductive portion for surface mounting on the first surface S1 of the substrate 21. Similarly, the substrate 21 has a fourth pad 72 in place of the second through hole 45 and the second connecting pad 46. The fourth pad 72 is a conductive portion for surface mounting on the second surface S2 of the substrate 21.

[0124] In this variation, the first retaining member 61B does not have a protrusion 61p. The first retaining member 61B has a metal flat surface 61s facing the third pad 71. The first retaining member 61B is fixed to the third pad 71 via a bonding portion 73. That is, the first retaining member 61 is mounted on the surface of the first surface S1 of the substrate 21. The bonding portion 73 is formed of a conductive bonding material (e.g., solder or conductive paste). For example, the bonding portion 73 can also be provided by the same reflow soldering process as the bonding of electronic components (e.g., DRAM 24 and NAND 25) mounted on the first surface S1 of the substrate 21.

[0125] Similarly, the second retaining member 62B does not have a protrusion 62p. The second retaining member 62B has a metal flat surface 62s facing the fourth pad 72. The second retaining member 62B is fixed to the fourth pad 72 via a bonding portion 74. That is, the second retaining member 62 is mounted on the surface of the second side S2 of the substrate 21. The bonding portion 74 is formed of a conductive bonding material (e.g., solder or conductive paste). For example, the bonding portion 74 can also be provided by the same reflow soldering process as the bonding of electronic components (e.g., controller 23 and NAND 25) mounted on the second side S2 of the substrate 21.

[0126] (Third variation)

[0127] Figure 8 This is a diagram illustrating the mounting structure of the capacitor 26 in the third modification. The semiconductor storage device 1C in the third modification has a first holding member 61C instead of the first holding member 61, and a second holding member 62C instead of the second holding member 62.

[0128] The substrate 21 has a screw hole 81 instead of the first through hole 43 and the first connecting plate 44. Similarly, the substrate 21 has a screw hole 82 instead of the second through hole 45 and the second connecting plate 46. In this modified example, the first retaining member 61C has a screw insertion hole 83 communicating with the screw hole 81 of the substrate 21. The first retaining member 61C is fixed to the substrate 21 by a screw 84 that is inserted into the screw insertion hole 83 and engages with the screw hole 81. Similarly, the second retaining member 62C has a screw insertion hole 85 communicating with the screw hole 82 of the substrate 21. The second retaining member 62C is fixed to the substrate 21 by a screw 86 that is inserted into the screw insertion hole 85 and engages with the screw hole 82. The screws 84 and 86 are an example of a "mechanical fixing structure". Alternatively, the mechanical fixing structure may replace the screws 84 and 86 with a screw (bis) or other fastening components, or it may be a fixing structure based on welding, etc.

[0129] (Fourth variation)

[0130] Figure 9 This is a diagram illustrating the mounting structure of the capacitor 26 in the fourth modification. The semiconductor storage device 1D in the fourth modification has a first holding member 61D instead of the first holding member 61, and a second holding member 62D instead of the second holding member 62.

[0131] The retaining part body 61m of the first retaining member 61D has a groove 91 instead of a through hole 61h. The groove 91 extends through the retaining part body 61m in the Y direction. The groove 91 opens in the +Z direction. A first lead wire 31 is inserted into the groove 91 in the Y direction. The width of the groove 91 in the X direction is approximately the same as the diameter of the first lead wire 31. If the first lead wire 31 is inserted into the groove 91, the first lead wire 31 is held by the retaining part body 61m from both sides. The groove 91 is an example of a "receiving part capable of holding a lead wire".

[0132] Similarly, the retaining body 62m of the second retaining member 62D has a groove 92 instead of a through hole 62h. The groove 92 extends through the retaining body 62m in the Y direction. The groove 92 opens in the -Z direction. The second lead 32 is inserted into the groove 92 in the Y direction. The width of the groove 92 in the X direction is approximately the same as the diameter of the second lead 32. If the second lead 32 is inserted into the groove 92, the second lead 32 is held by the retaining body 62m from both sides. The groove 92 is an example of a "receiving part capable of holding the lead".

[0133] (Fifth variation)

[0134] Figure 10 This is a diagram illustrating the mounting structure of the capacitor 26 in the fifth modification. The semiconductor storage device 1E of the fifth modification has a first holding member 61E instead of the first holding member 61, and a second holding member 62E instead of the second holding member 62.

[0135] The substrate 21 does not have a first pad 41 and a second pad 42. A first connecting pad 44 of the substrate 21, to which the first holding member 61E is attached, is connected to the wiring pattern 21w of the substrate 21. The first holding member 61E is, for example, made of metal and is conductive. The first holding member 61E is connected to the first connecting pad 44 and, via the first connecting pad 44, to the wiring pattern 21w of the substrate 21. That is, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first holding member 61E and the first connecting pad 44. Alternatively, a bonding portion 101 may be provided to secure the electrical connection between the first holding member 61E and the first lead 31. The bonding portion 101 is, for example, formed of a conductive bonding material (e.g., solder or conductive paste). The bonding portion 101 is, for example, provided on the end face of the first holding member 61E in the Y direction.

[0136] For details regarding the second retaining component 62E, simply change "first retaining component 61E" to "second retaining component 62E", "first connecting disk 44" to "second connecting disk 46", and "first lead 31" to "second lead 32" in the above description of the first retaining component 61E.

[0137] Alternatively, the first retaining member 61E and the second retaining member 62E can replace the first connecting pad 44 and the second connecting pad 46 and be connected to the wiring pattern 21w of the substrate 21 via the surface mounting pads 71 ​​and 72 described in the second variation.

[0138] Figure 11 This is a diagram illustrating another aspect of the fifth variation. The first retaining member 61E and the second retaining member 62E may also have the grooves 91 and 92 described in the fourth variation, instead of the through holes 61h and 62h. In this case, the engagement portion 101 may, for example, be provided from the +Z direction side relative to the groove 91 of the first retaining member 61E and the first lead 31. Similarly, the engagement portion 101 may, for example, be provided from the -Z direction side relative to the groove 92 of the second retaining member 62E and the first lead 31.

[0139] (Sixth variation)

[0140] Figure 12This diagram illustrates the mounting structure of the capacitor 26 in the sixth modified example. In the semiconductor memory device 1F of this modified example, the substrate 21 replaces the first pad 41 and has a third through-hole 111 and a third connecting pad 112. The third through-hole 111 penetrates the substrate 21 along the Z direction. For example, a metal plating layer is provided on the inner surface of the third through-hole 111. The third connecting pad 112 is provided in the second surface S2 of the substrate 21, surrounding the third through-hole 111. The third connecting pad 112 is connected to the wiring pattern 21w of the substrate 21. Furthermore, the substrate 21 replaces the second pad 42 and has a fourth through-hole 113 and a fourth connecting pad 114. The fourth through-hole 113 penetrates the substrate 21 along the Z direction. For example, a metal plating layer is provided on the inner surface of the fourth through-hole 113. The fourth connecting pad 114 is provided in the first surface S1 of the substrate 21, surrounding the fourth through-hole 113. The fourth connecting pad 114 is connected to the wiring pattern 21w of the substrate 21.

[0141] In this modified example, the first lead portion 31a of the first lead 31 of the capacitor 26 is bent in the -Z direction relative to the second lead portion 31b and inserted into the third through hole 111. A joint portion 115 is provided on the third connecting plate 112. The joint portion 115 electrically connects the first lead portion 31a of the first lead 31 to the third connecting plate 112. Similarly, the first lead portion 32a of the second lead 32 of the capacitor 26 is bent in the +Z direction relative to the second lead portion 32b and inserted into the fourth through hole 113. A joint portion 116 is provided on the fourth connecting plate 114. The joint portion 116 electrically connects the first lead portion 32a of the second lead 32 to the fourth connecting plate 114. The joint portions 115 and 116 are formed, for example, of a conductive bonding material (e.g., solder or conductive paste).

[0142] (Seventh variation)

[0143] Figure 13 This is a diagram illustrating the mounting structure of the capacitor 26 in the seventh modification. The semiconductor storage device 1G of the seventh modification has a second holding member 62G instead of the second holding member 62.

[0144] The second holding member 62G is the same as the first holding member 61 and is placed on the first surface S1 of the substrate 21. The second pad 42 is the same as the first pad 41 and is provided on the first surface S1 of the substrate 21. The second connecting pad 46 is the same as the first connecting pad 44 and is provided on the second surface S2 of the substrate 21.

[0145] The center C of the component body 30 of the capacitor 26 in the Z direction is, for example, parallel to the substrate 21 in the Y direction. The component body 30 has a region 30a facing the substrate 21 in the Y direction. A first lead 31 and a second lead 32 protrude from the region 30a of the component body 30.

[0146] The first lead 31 and the second lead 32 each have two bent sections. For example, in addition to the first lead portion 31a and the second lead portion 31b described above, the first lead 31 also has a third lead portion 31c and a fourth lead portion 31d. The third lead portion 31c protrudes from region 30a of the component body 30 in the -Y direction. The fourth lead portion 31d bends from the end of the third lead portion 31c in the -Y direction direction in the +Z direction and extends along the Z direction. The end of the fourth lead portion 31d in the +Z direction direction is connected to the second lead portion 31b. Similarly, the second lead 32, in addition to the first lead portion 32a and the second lead portion 32b described above, also has a third lead portion 32c and a fourth lead portion 32d. The third lead portion 32c protrudes from region 30a of the component body 30 in the -Y direction. The fourth lead portion 32d bends from the end of the third lead portion 32c on the -Y direction side toward the +Z direction and extends along the Z direction. The end of the fourth lead portion 32d on the +Z direction side is connected to the second lead portion 32b.

[0147] Alternatively, the first retaining member 61 may not have a protrusion 61p, but may be surface-mounted to the pad 44 on the first surface S1 of the substrate 21. Similarly, the second retaining member 62G may not have a protrusion 62p, but may be surface-mounted to the pad 46 on the first surface S1 of the substrate 21.

[0148] Furthermore, the first retaining member 61 and the second retaining member 62G may also have the same characteristics as described in the sixth embodiment (described later). Figure 30 The clamping portion 190 is similarly arranged overlapping the first surface S1 of the substrate 21, and the protrusion 61p, which is inserted into the first through hole 43 of the substrate 21 and fixed to the substrate 21 through the third joining portion 63, is similar to that in the first embodiment. In addition, the first holding member 61 and the second holding member 62G may not have the protrusion 61p, but may be surface-mounted to the pad 44 provided on the first surface S1 of the substrate 21.

[0149] (Second Implementation)

[0150] Next, the second embodiment will be described. The second embodiment differs from the first embodiment in that it includes a locking mechanism for securing the lead wire. The configuration, except as described below, is the same as that of the first embodiment.

[0151] Figure 14 This is a diagram illustrating the mounting structure of the capacitor 26 in the second embodiment. The semiconductor memory device 1H of the second embodiment has a first holding member 61H instead of the first holding member 61, and a second holding member 62H instead of the second holding member 62.

[0152] The first retaining member 61H does not have a solder-like joint, but instead has a locking mechanism 121 for securing the first lead 31. The locking mechanism 121 secures the first lead 31 in a detachable manner, for example. The locking mechanism 121 is an example of a "lead-receiving portion capable of retaining the lead." The locking mechanism 121, for example, has a base 130, a first pressing portion 131, and a second pressing portion 132. The first pressing portion 131 and the second pressing portion 132 are examples of "leaf springs."

[0153] The base 130 is a plate portion along the first surface S1 of the substrate 21. The base 130 is placed on the first surface S1 of the substrate 21. The base 130 has one or more protrusions 61p and is fixed to the substrate 21.

[0154] The first pressing portion 131 includes a first portion 131a and a second portion 131b. The first portion 131a stands upright from the +X direction side end of the base 130 in the +Z direction and extends in a direction separating from the substrate 21. The second portion 131b is bent in a manner that approaches the inside of the first holding member 61 from the +Z direction side end of the first portion 131a. The first pressing portion 131 is, for example, made of metal and has elasticity. Through the elastic deformation of the first pressing portion 131, the second portion 131b can move from the +Z direction side end of the first portion 131a in a direction approaching the first portion 131a and in a direction separating from the first portion 131a.

[0155] Similarly, the second pressing portion 132 includes a first portion 132a and a second portion 132b. The first portion 132a stands upright from the end of the base 130 in the -X direction direction toward the +Z direction and extends toward the direction of separation from the substrate 21. The second portion 132b is bent toward the inside of the first holding member 61 from the end of the first portion 132a in the +Z direction direction. The second pressing portion 132 is, for example, made of metal and has elasticity. Through the elastic deformation of the second pressing portion 132, the second portion 132b can move from the end of the first portion 132a in the +Z direction direction direction toward the first portion 132a and toward the direction of separation from the first portion 132a.

[0156] In this embodiment, when the first lead 31 is installed on the first retaining member 61H, the first lead 31 is sandwiched between the second portion 131b of the first pressing portion 131 and the second portion 132b of the second pressing portion 132. For example, the first lead 31 is connected to both the first pressing portion 131 and the second pressing portion 132, thereby causing the first pressing portion 131 and the second pressing portion 132 to elastically deform in a way that increases the distance between them, thus installing them inside the first retaining member 61.

[0157] If the central portion (maximum diameter portion) of the first lead 31 in the Z direction moves to a position closer to the -Z direction than the front end of the second portion 131b of the first pressing portion 131 and the front end of the second portion 132b of the second pressing portion 132, the posture of the first pressing portion 131 and the second pressing portion 132 is restored due to the elastic force. That is, the distance between the second portion 131b of the first pressing portion 131 and the second portion 132b of the second pressing portion 132 becomes closer. As a result, a portion of the first pressing portion 131 connects to the first lead 31 from the side opposite to the substrate 21, restricting the first lead 31 from leaving the substrate 21. Similarly, a portion of the second pressing portion 132 connects to the first lead 31 from the side opposite to the substrate 21, restricting the first lead 31 from leaving the substrate 21. As a result, the first lead 31 is fixed and held by the locking mechanism 121.

[0158] The details of the second retaining member 62H are the same as those of the first retaining member 61H. That is, the description of the second retaining member 62H is simply that in the above description related to the first retaining member 61H, "first retaining member 61H" is changed to "second retaining member 62H", "protrusion 61p" is changed to "protrusion 62p", "first lead 31" is changed to "second lead 32", "+Z direction" is changed to "-Z direction", and "+X direction" is changed to "-X direction".

[0159] With this configuration, similar to the first embodiment, the semiconductor memory device 1H can be made thinner. Furthermore, with this embodiment, it is not necessary to provide solder-like bonding portions for the first lead 31 and the second lead 32.

[0160] (Third Implementation)

[0161] Next, the third embodiment will be described. The difference between the third embodiment and the first embodiment is the notch in the substrate that holds the retaining member in place. All other components described below are the same as in the first embodiment.

[0162] Figure 15 This is a diagram illustrating the mounting structure of the capacitor 26 in the third embodiment. The semiconductor memory device 1J of the third embodiment has a first holding member 61J instead of the first holding member 61, and a second holding member 62J instead of the second holding member 62.

[0163] The end of the substrate 21 on the +Y direction side has a first notch 141 and a second notch 142 (see reference). Figure 16 The first notch 141 and the second notch 142 are recessed from the end of the substrate 21 in the +Y direction towards the -Y direction. The first notch 141 and the second notch 142 are spaced apart and arranged side by side in the X direction.

[0164] The width of the first notch 141 in the X direction is approximately the same as the width of the first retaining member 61J in the X direction. For example, the first retaining member 61J is inserted into the first notch 141 along the Y direction and is held and fixed by the substrate 21 from both sides in the X direction. Similarly, the width of the second notch 142 in the X direction is approximately the same as the width of the second retaining member 62J in the X direction. For example, the second retaining member 62J is inserted into the second notch 142 along the Y direction and is held and fixed by the substrate 21 from both sides in the X direction.

[0165] Figure 16 This is a top view illustrating an example of the assembly method of the mounting structure in this embodiment. In this embodiment, firstly, a first retaining member 61J is mounted on the first lead 31, and a second retaining member 62J is mounted on the second lead 32. Then, the first retaining member 61J holding the first lead 31 is inserted into the first notch 141 and fixed to the substrate 21, and the second retaining member 62J holding the second lead 32 is inserted into the second notch 142 and fixed to the substrate 21. Then, as... Figure 15 As shown, the first lead 31 is bonded to the first pad 41 through the first joint 51, and the second lead 32 is bonded to the second pad 42 through the second joint 52.

[0166] With this configuration, similar to the first embodiment, the semiconductor memory device 1J can be made thinner. Furthermore, the first holding member 61J may also have an engaging portion 145, which, when inserted into the first notch 141, engages with the substrate 21 or a component mounted on the substrate 21, thereby restricting the movement of the first holding member 61J in the +Y direction. Similarly, the second holding member 62J may also have an engaging portion 146, which, when inserted into the second notch 142, engages with the substrate 21 or a component mounted on the substrate 21, thereby restricting the movement of the second holding member 62J in the +Y direction. The engaging portions 145 and 146 are, for example, claw portions that engage with a recess in the substrate 21 or a component mounted on the substrate 21.

[0167] (Fourth Implementation)

[0168] Next, the fourth embodiment will be described. The fourth embodiment differs from the first embodiment in that it includes a plug-type retaining member. The configuration other than that described below is the same as that of the first embodiment.

[0169] Figure 17This is a diagram illustrating the mounting structure of the capacitor 26 in the fourth embodiment. The semiconductor storage device 1K of the fourth embodiment has a holding member 150 instead of the first holding member 61 and the second holding member 62. The holding member 150, for example, has a main body portion 151, a first conductive portion 152, a second conductive portion 153, a first protrusion 154, and a second protrusion 155.

[0170] The main body 151 forms the main part of the retaining member 150. The main body 151 is made of synthetic resin and is insulating. The main body 151 is an example of an "insulating part". The main body 151, for example, has a main body support portion 160 that supports the retaining member body 30. The main body support portion 160 has a first support portion 161 and a second support portion 162. The first support portion 161 has a shape that follows a portion of the outer shape of the member body 30 and supports the member body 30 by contacting it. For example, the first support portion 161 is an arc shape that follows the outer shape of the member body 30 and supports the end of the member body 30 in the +X direction. The second support portion 162 is disposed on the side opposite to the first support portion 161 relative to the member body 30. The second support portion 162 has a shape that follows the outer shape of the member body 30 and supports the member body 30 by contacting it. For example, the second support portion 162 is formed as an arc shape that follows the outer shape of the member body 30 and supports the end of the member body 30 in the -X direction.

[0171] In this embodiment, the main body 151 has a first through hole 61h, a second through hole 62h, a first groove 61g, and a second groove 62g. The first through hole 61h and the second through hole 62h are open in the Y direction. The main body 151 retains the second lead portion 31b of the first lead 31 by allowing the second lead portion 31b of the first lead 31 to pass through the first through hole 61h. The main body 151 retains the second lead portion 32b of the second lead 32 by allowing the second lead portion 32b of the second lead 32 to pass through the second through hole 62h.

[0172] The first groove 61g and the second groove 62g extend along the Y direction. For example, the first groove 61g and the second groove 62g open in the +Z direction. The first groove 61g is located on the side opposite to the main body support portion 160 relative to the first through hole 61h. The first lead portion 31a of the first lead 31 passing through the first through hole 61h is located in the first groove 61g. The first groove 61g suppresses the positional displacement of the first lead portion 31a of the first lead 31 in the X direction. The second groove 62g is located on the side opposite to the main body support portion 160 relative to the second through hole 62h. The first lead portion 32a of the second lead 32 passing through the second through hole 62h is located in the second groove 62g. The second groove 62g suppresses the positional displacement of the first lead portion 32a of the second lead 32 in the X direction. The first groove 61g and the second groove 62g are examples of "support portions capable of holding leads".

[0173] A first conductive portion 152 is provided on the inner surface of the first groove 61g. A joint portion 156 is provided in the first groove 61g to electrically connect the first lead portion 31a of the first lead 31 to the first conductive portion 152. The joint portion 156 covers the first lead portion 31a and the first conductive portion 152 from the +Z direction side. A second conductive portion 153 is provided on the inner surface of the second groove 62g. A joint portion 157 is provided in the second groove 62g to electrically connect the first lead portion 32a of the second lead 32 to the second conductive portion 153. The joint portion 157 covers the first lead portion 32a and the second conductive portion 153 from the +Z direction side. The joint portions 156 and 157 are formed, for example, of a conductive bonding material (e.g., solder or conductive paste). Furthermore, the mounting of the first lead 31 and the second lead 32 to the retaining member 150 is not limited to the joint portions 156 and 157; spot welding or the like can also be used.

[0174] The first protrusion 154 is a protrusion that extends from the main body 151 in the -Z direction. The first protrusion 154 is, for example, made of metal and is conductive. The first protrusion 154 is electrically connected to the first conductive portion 152 inside the main body 151. The first protrusion 154 is inserted into the first through hole 43 of the substrate 21 and connected to the first connecting pad 44 via the third joining portion 63. The first connecting pad 44 is connected to the wiring pattern 21w of the substrate 21. Thus, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first conductive portion 152, the first protrusion 154, and the first connecting pad 44.

[0175] Similarly, the second protrusion 155 is a protrusion that extends from the main body 151 in the -Z direction. The second protrusion 155 is, for example, made of metal and is conductive. The second protrusion 155 is electrically connected to the second conductive portion 153 inside the main body 151. The second protrusion 155 is inserted into the second through hole 45 of the substrate 21 and is connected to the second connecting pad 46 via the fourth connecting portion 64. The second connecting pad 46 is connected to the wiring pattern 21w of the substrate 21. Thus, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the second conductive portion 153, the second protrusion 155, and the second connecting pad 46.

[0176] Figure 18 This is a cross-sectional view illustrating an example of the assembly method of the mounting structure in this embodiment. In this embodiment, firstly, the retaining member 150 is mounted to the substrate 21 (see reference 1) via the third joint 63 and the fourth joint 64. Figure 18 (a)). Then, the first lead 31 and the second lead 32 are inserted into the first through hole 61h and the second through hole 62h of the retaining member 150, and a portion of the member body 30 is inserted into the interior of the body receiving portion 160 (see reference). Figure 18 (b)). Thus, the capacitor 26 is held by the holding member 150. Next, a joining portion 156 is provided on the first lead portion 31a of the first lead 31, so that the first lead portion 31a of the first lead 31 is joined to the first conductive portion 152. Similarly, a joining portion 157 is provided on the first lead portion 32a of the second lead 32, so that the first lead portion 32a of the second lead 32 is joined to the second conductive portion 153 (see reference 153). Figure 18 (c) in the middle.

[0177] Alternatively, the capacitor 26 can be mounted on the holding member 150 first, and then the holding member 150 holding the capacitor 26 can be mounted on the substrate 21 instead of the above example.

[0178] With this configuration, similar to the first embodiment, the semiconductor memory device 1K can be made thinner. Furthermore, according to this embodiment, the first lead 31 and the second lead 32 are separately disposed on opposite sides of the substrate 21 in the Z direction, eliminating the need for... Figure 4 The capacitor 26 is mounted at an angle as shown. This improves the ease of mounting the capacitor 26 onto the substrate 21.

[0179] (First variation)

[0180] Figure 19This diagram illustrates the mounting structure of a first variation of the fourth embodiment. In the first variation, the main body 151 of the retaining member 150 is disposed offset from the substrate 21 in the +Z direction compared to the fourth embodiment. For example, the entire main body bearing portion 160 of the retaining member 150 is located further in the +Z direction than the first surface S1 of the substrate 21. Consequently, the center C of the component body 30 of the capacitor 26 in the Z direction is positioned in the +Z direction relative to the substrate 21. For example, the entire component body 30 of the capacitor 26 is located further in the +Z direction than the first surface S1 of the substrate 21.

[0181] (Second variation)

[0182] Figure 20 This diagram illustrates the mounting structure of a second variation of the fourth embodiment. In this second variation, the main body 151 of the retaining member 150 is disposed offset from the substrate 21 in the -Z direction compared to the fourth embodiment. For example, at least a portion of the main body bearing portion 160 of the retaining member 150 is located further in the -Z direction than the first surface S1 of the substrate 21. Consequently, the center C of the component body 30 of the capacitor 26 in the Z direction is positioned in the -Z direction relative to the substrate 21. For example, the entire component body 30 of the capacitor 26 is located further in the -Z direction than the first surface S1 of the substrate 21.

[0183] (Third variation)

[0184] Figure 21 This is a diagram illustrating the mounting structure of the third variation of the fourth embodiment. The semiconductor memory device 1KA of the third variation has a holding member 150A. The holding member 150A is the same as that in the fourth embodiment described above, having a main body 151, a first conductive part 152, and a second conductive part 153.

[0185] In this modified example, the substrate 21 has a screw hole 81 instead of the first through hole 43 and the first connecting plate 44. Similarly, the substrate 21 has a screw hole 82 instead of the second through hole 45 and the second connecting plate 46. The main body 151 has a screw insertion hole 83 communicating with the screw hole 81 of the substrate 21, and a screw insertion hole 85 communicating with the screw hole 82 of the substrate 21. Moreover, the main body 151 is fixed to the substrate 21 by screws 84 inserted into the screw insertion hole 83 and engaging with the screw hole 81, and screws 86 inserted into the screw insertion hole 85 and engaging with the screw hole 82.

[0186] In this modified example, the inner peripheral surfaces of screw hole 81 and screw hole 82 are respectively connected to the wiring pattern 21w of substrate 21. Therefore, the first lead 31 is connected to the wiring pattern 21w of substrate 21 via the first conductive portion 152, screw 84, and the inner peripheral surface of screw hole 81. Similarly, the second lead 32 is connected to the wiring pattern 21w of substrate 21 via the second conductive portion 153, screw 86, and the inner peripheral surface of screw hole 82.

[0187] (Fifth Implementation)

[0188] Next, the fifth embodiment will be described. The fifth embodiment differs from the first embodiment in that the retaining member for holding the lead has a shape that extends to a position where it detaches from the substrate. The configuration other than that described below is the same as that of the first embodiment.

[0189] Figure 22 This is a diagram illustrating the mounting structure of the capacitor 26 in the fifth embodiment. The semiconductor memory device 1L of the fifth embodiment has a first holding member 61L instead of the first holding member 61, and a second holding member 62L instead of the second holding member 62.

[0190] The substrate 21 has a first through hole 43, a first connecting pad 44, a second through hole 45, and a second connecting pad 46. In this embodiment, the first connecting pad 44 and the second connecting pad 46 are disposed on the second surface S2 of the substrate 21. The first connecting pad 44 and the second connecting pad 46 are connected to the wiring pattern 21w of the substrate 21.

[0191] The first retaining member 61L is made of metal, for example, and is conductive. The first retaining member 61L has a retaining body 171 and a protrusion 61p. The retaining body 171 extends along the Y direction. The retaining body 171 has a first portion 171a that overlaps with the substrate 21 in the Z direction, and a second portion 171b that does not overlap with the substrate 21 in the Z direction.

[0192] The second part 171b has a first through hole 61h and a first groove 61g. The first through hole 61h opens in the Y direction. A first lead 31 passes through the first through hole 61h. A first retaining member 61L retains the second lead portion 31b of the first lead 31 by allowing the second lead portion 31b of the first lead 31 to pass through the first through hole 61h. In this embodiment, the first through hole 61h and the first lead 31 are side-by-side with the substrate 21 in the Y direction. The first groove 61g extends in the Y direction. The first groove 61g opens in the -Z direction. The first groove 61g is located on the side opposite to the component body 30 relative to the first through hole 61h. The first lead portion 31a of the first lead 31 passing through the first through hole 61h is located in the first groove 61g.

[0193] A junction 156 is provided in the first slot 61g to electrically connect the first lead portion 31a of the first lead 31 to the first retaining member 61L. The junction 156 covers the first lead portion 31a of the first lead 31 and the first retaining member 61L from the -Z direction side. The junction 156 is formed, for example, of a conductive bonding material (e.g., solder or conductive paste). Furthermore, the mounting of the first lead 31 to the first retaining member 61L is not limited to the junction 156; it can also be by spot welding, etc.

[0194] The first protrusion 61p is a protrusion that protrudes from the first portion 171a of the holding body 171 in the -Z direction. The first protrusion 61p is inserted into the first through hole 43 of the substrate 21 and connected to the first connecting pad 44 via the third joint 63. Thus, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first holding member 61L and the first connecting pad 44.

[0195] Figure 23 This diagram illustrates an example of a method for mounting the first lead 31 to the first retaining member 61L. In this embodiment, the first retaining member 61L is placed on the clamp J in an upside-down position relative to its position when mounted to the substrate 21. With the first retaining member 61L placed on the clamp J, the first lead 31 is mounted to the first retaining member 61L via the engagement portion 156.

[0196] The details of the second retaining member 62L are the same as those of the first retaining member 61L. The description of the second retaining member 62L is simplified by referring to the first retaining member 61L as the second retaining member 62L, the protrusion 61p as the protrusion 62p, the first through hole 61h as the second through hole 62h, the first groove 61g as the second groove 62g, the first lead wire 31 as the second lead wire 32, the first through hole 43 as the second through hole 45, the first connecting plate 44 as the second connecting plate 46, and the joint 156 as the joint 157.

[0197] In this embodiment, firstly, the first holding member 61L and the second holding member 62L are mounted on the capacitor 26, and then the first holding member 61L and the second holding member 62L holding the capacitor 26 are mounted on the substrate 21. Alternatively, the first holding member 61L and the second holding member 62L may be mounted on the substrate 21 firstly, and then the capacitor 26 may be mounted on the first holding member 61L and the second holding member 62L fixed to the substrate 21.

[0198] With this configuration, similar to the first embodiment, the semiconductor memory device 1L can be made thinner. Furthermore, according to this embodiment, by providing the first trench 61g and the second trench 62g, positional misalignment of the first lead 31 and the second lead 32 can be suppressed. Additionally, in this embodiment, the first holding member 61L can also be fixed to the substrate 21 by screws 84, similar to the holding member 150A in the third variation of the fourth embodiment. Similarly, the second holding member 62L can also be fixed to the substrate 21 by screws 86, similar to the holding member 150A in the third variation of the fourth embodiment.

[0199] Modifications to the fifth embodiment will be described. In each modification, the configuration other than that described below is the same as that of the fifth embodiment described above. The modifications described below can also be implemented by appropriately combining the configurations of other modifications and / or other embodiments.

[0200] Alternatively, the first retaining member 61L may not have a protrusion 61p, but may be surface-mounted to a pad 44 provided on the first surface S1 of the substrate 21. Similarly, the second retaining member 62L may not have a protrusion 62p, but may be surface-mounted to a pad 46 provided on the first surface S1 of the substrate 21.

[0201] (First variation)

[0202] Figure 24 This is a diagram illustrating the mounting structure of the capacitor 26 in the first variation of the fifth embodiment. The second portion 171b of the first retaining member 61L and the second portion 171b of the second retaining member 62L have a through hole 171h. The through hole 171h penetrates the retaining body 171 in a direction intersecting the Y direction (e.g., the Z direction). The through hole 171h is an example of a "lead-holding portion".

[0203] The first lead 31 includes a base 31x and a bent portion 31y. The base 31x protrudes linearly from the component body 30 in the -Y direction. The bent portion 31y bends relative to the base 31x in a direction intersecting the Y direction (e.g., the Z direction) and is inserted into the through hole 171h of the first retaining member 61L. Similarly, the second lead 32 includes a base 32x and a bent portion 32y. The base 32x protrudes linearly from the component body 30 in the -Y direction. The bent portion 32y bends relative to the base 32x in a direction intersecting the Y direction (e.g., the Z direction) and is inserted into the through hole 171h of the second retaining member 62L. The bases 31x and 32x are examples of "third lead portions". The bent portions 31y and 32y are examples of "fourth lead portions". In this modified example, the joints 156 and 157 are provided on the end face of the retaining member body 171 in the +Z direction.

[0204] According to this configuration, compared to the configuration of the fifth embodiment, the distance between the substrate 21 and the component body 30 of the capacitor 26 can be shortened. This allows for further miniaturization of the semiconductor memory device 1L. Furthermore, the through-hole 171h is not limited to a through-hole along the Z-direction, but can also be a through-hole along a direction inclined relative to the Z-direction.

[0205] Alternatively, the first retaining member 61L may not have the protrusion 61p and may be surface-mounted to the pad 44 provided on the first surface S1 of the substrate 21. Similarly, the second retaining member 62L may not have the protrusion 62p and may be surface-mounted to the pad 46 provided on the first surface S1 of the substrate 21.

[0206] (Second variation)

[0207] Figure 25 This is a diagram illustrating the mounting structure of the capacitor 26 in the second modification. The semiconductor memory device 1M in the second modification has a holding member 180 instead of the first holding member 61 and the second holding member 62. The holding member 180, for example, has a first holding portion 181, a second holding portion 182, and a frame 183.

[0208] The first retaining portion 181 is a component corresponding to the first retaining member 61L in the fifth embodiment. The first retaining portion 181 is made of metal, for example, and is conductive. The first retaining portion 181 has a retaining portion body 171 and a protrusion 61p.

[0209] In this modified example, the second portion 171b of the retaining body 171 has a clamping portion 190. The clamping portion 190 is elastic and clamps the first lead 31, thereby retaining the first lead 31. The clamping portion 190 is an example of a "receiving portion capable of retaining the lead". For example, the clamping portion 190 includes a leaf spring 191. The leaf spring 191 has a first portion 191a, a second portion 191b, and a third portion 191c.

[0210] The first portion 191a forms the base of the clamping portion 190. The first portion 191a is located, for example, on the +Z direction side relative to the first lead 31. The second portion 191b extends from the end of the first portion 191a on the -Y direction side toward the -Z direction. The third portion 191c is bent from the end of the second portion 191b on the -Z direction side and extends toward the first portion 191a. For example, the third portion 191c includes a portion extending in a direction inclined relative to the Z direction. The third portion 191c is located, for example, on the -Z direction side relative to the first lead 31.

[0211] When the first lead 31 is inserted into the clamping part 190, the first lead 31 is inserted between the first part 191a and the third part 191c, causing the leaf spring 191 to elastically deform by widening the distance between the first part 191a and the third part 191c. As a result, the first lead 31 is held by the third part 191c pressed towards the first part 191a. The first lead 31 is clamped by the clamping part 190, thereby becoming electrically connected to the first holding part 181.

[0212] The details of the second retaining part 182 are the same as those of the first retaining part 181. That is, the description of the second retaining part 182 is simply that in the above description related to the first retaining part 181, "first retaining part 181" is changed to "second retaining part 182", "protrusion 61p" is changed to "protrusion 62p", and "first lead 31" is changed to "second lead 32".

[0213] A frame 183 is disposed across at least a portion of the first retaining portion 181 and at least a portion of the second retaining portion 182, integrally supporting the first retaining portion 181 and the second retaining portion 182. The frame 183 is made of, for example, synthetic resin or rubber and has insulating properties. The frame 183 is an example of an "insulating portion". In this embodiment, the frame 183 is a cuboid spanning the retaining body 171 of the first retaining portion 181 and the retaining body 171 of the second retaining portion 182, accommodating the second portion 171b of the retaining body 171 of the first retaining portion 181 and the second portion 171b of the retaining body 171 of the second retaining portion 182. The frame 183 has a through hole 61h for inserting the first lead 31 (see reference). Figure 21 ), and a through hole 62h for inserting the second lead 32 (see reference). Figure 21 ).

[0214] With this configuration, by providing the clamping part 90, it is not necessary to provide a solder joint for the first lead 31 and the second lead 32.

[0215] Alternatively, the first holding portion 181 may not have the protrusion 61p and may be surface-mounted to the pad 44 provided on the first surface S1 of the substrate 21. Similarly, the second holding portion 182 may not have the protrusion 62p and may be surface-mounted to the pad 46 provided on the first surface S1 of the substrate 21.

[0216] (Third variation)

[0217] Figure 26This is a diagram illustrating the mounting structure of the capacitor 26 in the third modification. The semiconductor storage device 1N of the third modification has a holding member 200 instead of the first holding member 61 and the second holding member 62. The holding member 200, for example, has a first holding portion 201, a second holding portion 202, and a support portion 203.

[0218] The first retaining portion 201 has a shape substantially the same as the first retaining member 61L in the fifth embodiment, and has a retaining portion body 171 and a protrusion 61p. The retaining portion body 171 has a first portion 171a and a second portion 171b. Moreover, the retaining portion body 171 in this modified example has a first engaging portion 201a. The first engaging portion 201a is bent in the +X direction from the end of the second portion 171b on the +Y direction side and extends in the +X direction.

[0219] The second retaining portion 202 has a shape substantially the same as the second retaining member 62L of the fifth embodiment, and has a retaining portion body 171 and a protrusion 62p. The retaining portion body 171 has a first portion 171a and a second portion 171b. Moreover, the retaining portion body 171 of this modified example has a second engaging portion 202a. The second engaging portion 202a is bent in the -X direction from the end of the second portion 171b on the +Y direction side and extends in the -X direction.

[0220] The support portion 203 is disposed across at least a portion of the first retaining portion 201 and at least a portion of the second retaining portion 202, integrally supporting the first retaining portion 201 and the second retaining portion 202. The support portion 203 is made of, for example, synthetic resin or rubber and has insulating properties. The support portion 203 is an example of an "insulating portion". In this embodiment, the support portion 203 has a main body bearing portion 160, a third engaging portion 203a, and a fourth engaging portion 203b. The main body bearing portion 160 supports the component body 30 of the capacitor 26.

[0221] Figure 27 This is a side view showing the retaining member 200 of this modified example exploded. Additionally, Figure 27 It is Figure 26The diagram shows the retaining member 200 in an inverted position. The third engaging portion 203a has a recess 211 for engaging with the first engaging portion 201a of the first retaining portion 201. The recess 211 is, for example, a groove open in the -Z direction. By engaging the first engaging portion 201a of the first retaining portion 201 into the recess 211 along the Z direction, the first retaining portion 201 is secured to the third engaging portion 203a. Similarly, the fourth engaging portion 203b has a recess 212 for engaging with the second engaging portion 202a of the second retaining portion 202. The recess 212 is, for example, a groove open in the -Z direction. By engaging the second engaging portion 202a of the second retaining portion 202 into the recess 212 along the Z direction, the second retaining portion 202 is secured to the fourth engaging portion 203b.

[0222] With this configuration, similar to the first embodiment, the semiconductor memory device 1N can be made thinner. According to the configuration of this embodiment, by providing the support portion 203, the first holding portion 201 and the second holding portion 202 can be treated as a single unit. This improves assembly workability.

[0223] (Fourth variation)

[0224] Figure 28 This is a diagram illustrating the mounting structure of capacitor 26 in the fourth modified example. Figure 29 This is a perspective view showing the exploded mounting structure of the capacitor 26 in the fourth modification. The semiconductor memory device 1P of the fourth modification has a holding member 230 and a fixing member 240 instead of the first holding member 61 and the second holding member 62.

[0225] The holding member 230 is, for example, a printed circuit board, having an insulating substrate 230i and a wiring pattern 230w disposed on the insulating substrate 230i. The wiring pattern 230w can be a wiring pattern disposed on the surface layer of the insulating substrate 230i or a wiring pattern disposed on the inner layer of the insulating substrate 230i. The wiring pattern 230w includes, for example, a first wiring 230wa and a second wiring 230wb. The holding member 230 has a first surface 230a facing the substrate 21 and a second surface 230b facing the side opposite to the first surface 230a.

[0226] The retaining component 230 has a first through hole 231, a first connecting plate 232, a second through hole 233, a second connecting plate 234, a third through hole 235, a third connecting plate 236, a fourth through hole 237, and a fourth connecting plate 238.

[0227] The first through hole 231 is a through hole that penetrates the substrate 21 along the Z direction. The first connecting pad 232 is a conductive portion provided on the second surface 230b of the holding member 230. The first connecting pad 232 is provided around the first through hole 231. Here, the first lead 31 includes a base portion 31x and a bend portion 31y. The bend portion 31y of the first lead 31 is inserted into the first through hole 231. The bend portion 31y of the first lead 31 is fixed to the first connecting pad 232 by the joining portion 232J. Thus, the capacitor 26 is held by the holding member 230. The joining portion 232J is formed, for example, by a conductive bonding material (e.g., solder or conductive paste). The bend portion 31y of the first lead 31 is connected, for example, to the first wiring 230wa of the wiring pattern 230w via the first connecting pad 232.

[0228] The second through hole 233 is a through hole that penetrates the substrate 21 along the Z direction. The second connecting pad 234 is a conductive portion provided on the second surface 230b of the holding member 230. The second connecting pad 234 is provided around the second through hole 233. Here, the second lead 32 includes a base portion 32x and a bend portion 32y. The bend portion 32y of the second lead 32 is inserted into the second through hole 233. The bend portion 32y of the second lead 32 is fixed to the second connecting pad 234 via the joining portion 234J. Thus, the capacitor 26 is held by the holding member 230. The joining portion 234J is formed, for example, by a conductive bonding material (e.g., solder or conductive paste). The bend portion 32y of the second lead 32 is connected, for example, to the second wiring 230wb of the wiring pattern 230w via the second connecting pad 234.

[0229] The third through hole 235 is a through hole that penetrates the substrate 21 along the Z direction. The third connecting plate 236 is a conductive portion provided on the second surface 230b of the retaining member 230. The third connecting plate 236 is provided around the third through hole 235. Here, the fixing member 240, described later, has a first pin 241. The first portion 241a of the first pin 241 is inserted into the third through hole 235. The first portion 241a of the first pin 241 is fixed to the third connecting plate 236 via a joint 236J. The joint 236J is formed, for example, by a conductive bonding material (e.g., solder or conductive paste). The first portion 241a of the first pin 241 is connected, for example, to the first wiring 230wa of the wiring pattern 230w via the third connecting plate 236.

[0230] The fourth through hole 237 is a through hole that penetrates the substrate 21 along the Z direction. The fourth connecting plate 238 is a conductive portion provided on the second surface 230b of the retaining member 230. The fourth connecting plate 238 is provided around the fourth through hole 237. Here, the fixing member 240, described later, has a second pin 242. The first portion 242a of the second pin 242 is inserted into the fourth through hole 237. The first portion 242a of the second pin 242 is fixed to the fourth connecting plate 238 by a connecting portion 238J. The connecting portion 238J is formed, for example, by a conductive bonding material (e.g., solder or conductive paste). The first portion 242a of the second pin 242 is connected, for example, to the second wiring 230wb of the wiring pattern 230w via the fourth connecting plate 238.

[0231] The fixing member 240 has a first pin 241, a second pin 242, and a retaining portion 243. The first pin 241 and the second pin 242 are both metal pins and are conductive. The first pin 241 and the second pin 242 extend along the Z direction. The first pin 241 has a first portion 241a protruding to one side relative to the retaining portion 243 and a second portion 241b protruding to the other side relative to the retaining portion 243. Similarly, the second pin 242 has a first portion 242a protruding to one side relative to the retaining portion 243 and a second portion 242b protruding to the other side relative to the retaining portion 243.

[0232] The retaining portion 243 is formed of an insulating material such as synthetic resin. The retaining portion 243 integrally retains the first pin 241 and the second pin 242. When this mounting structure is assembled, the retaining portion 243 is located between the substrate 21 and the retaining member 230, functioning as a spacer that separates the substrate 21 from the retaining member 230 (see reference). Figure 28 ).

[0233] Furthermore, when the fixing member 240 is installed onto the retaining member 230, the retaining part 243 also functions as a limiting member for restricting the height of the first pin 241 and the second pin 242 protruding in the Z direction. That is, when the fixing member 240 is installed onto the retaining member 230, the retaining part 243 contacts the first surface 230a of the retaining member 230, thereby limiting the height of the first portion 241a of the first pin 241 protruding from the third through hole 235 of the retaining member 230 and the height of the first portion 242a of the second pin 242 protruding from the fourth through hole 237 of the retaining member 230. As a result, the first portion 241a of the first pin 241 can be stably connected to the third connecting plate 236, and the first portion 242a of the second pin 242 can be stably connected to the fourth connecting plate 238.

[0234] Similarly, when the fixing member 240 is mounted onto the substrate 21, the retaining part 243 also functions as a limiting member to restrict the height of the first pin 241 and the second pin 242 protruding in the Z direction. That is, when the fixing member 240 is mounted onto the substrate 21, the retaining part 243 contacts the first surface S1 of the substrate 21, thereby limiting the height of the second portion 241b of the first pin 241 protruding from the first through hole 43 of the substrate 21 and the height of the second portion 242b of the second pin 242 protruding from the second through hole 45 of the substrate 21. As a result, the second portion 241b of the first pin 241 can be stably connected to the first connecting plate 44, and the second portion 242b of the second pin 242 can be stably connected to the second connecting plate 46.

[0235] The substrate 21 has a first through hole 43, a first connecting disk 44, a second through hole 45, and a second connecting disk 46.

[0236] The second portion 241b of the first pin 241 is inserted into the first through hole 43 of the substrate 21. The second portion 241b of the first pin 241 is fixed to the first connecting plate 44 via the engagement portion 63. Thus, the retaining member 230 is fixed to the substrate 21. The second portion 241b of the first pin 241 is connected to the wiring pattern 21w of the substrate 21, for example, via the first connecting plate 44. Thus, the first lead 31 of the capacitor 26 is connected to the wiring pattern 21w of the substrate 21 via the first connecting plate 232 of the retaining member 230, the first wiring 230wa of the wiring pattern 230w of the retaining member 230, the third connecting plate 236 of the retaining member 230, the first pin 241 of the fixing member 240, and the first connecting plate 44 of the substrate 21.

[0237] The second portion 242b of the second pin 242 is inserted into the second through hole 45 of the substrate 21. The second portion 242b of the second pin 242 is fixed to the second connecting plate 46 via the engagement portion 64. Thus, the retaining member 230 is fixed to the substrate 21. The second portion 242b of the second pin 242 is connected to the wiring pattern 21w of the substrate 21, for example, via the second connecting plate 46. Thus, the second lead 32 of the capacitor 26 is connected to the wiring pattern 21w of the substrate 21 via the second connecting plate 234 of the retaining member 230, the second wiring 230wb of the wiring pattern 230w of the retaining member 230, the fourth connecting plate 238 of the retaining member 230, the second pin 242 of the fixing member 240, and the second connecting plate 46 of the substrate 21.

[0238] With this configuration, similar to the first embodiment, the semiconductor memory device 1P can be made thinner. According to the configuration of this embodiment, by utilizing the holding member 230 as a printed circuit board, a reduction in manufacturing cost can be achieved compared to other embodiments.

[0239] (Sixth Implementation Method)

[0240] Next, the sixth embodiment will be described. The sixth embodiment differs from the first embodiment in that the holding member has a clamping portion for holding the lead. The configuration other than that described below is the same as the second variation of the first embodiment.

[0241] Figure 30 This is a diagram illustrating the mounting structure of the capacitor 26 in the sixth embodiment. The semiconductor memory device 1Q of the sixth embodiment has a first holding member 61Q instead of the first holding member 61, and a second holding member 62Q instead of the second holding member 62.

[0242] The first holding member 61Q is the same as the second variation of the first embodiment, having a metal plane 61s with a pad 71 surface-mounted on the first surface S1 of the substrate 21. The first holding member 61Q is also the same as the second variation of the fifth embodiment, having a frame 183 and a clamping portion 190. The frame 183 houses the clamping portion 190. The first portion 191a of the clamping portion 190 is joined to the pad 71 via a joining portion 73. The pad 71 is connected to the wiring pattern 21w of the substrate 21. Thus, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190 of the first holding member 61Q and the pad 71.

[0243] The second holding member 62Q is the same as the second variation of the first embodiment, having a metal plane 62s with a pad 72 surface-mounted on the second surface S2 of the substrate 21. The second holding member 62Q is also the same as the second variation of the fifth embodiment, having a frame 183 and a clamping portion 190. The frame 183 houses the clamping portion 190. The first portion 191a of the clamping portion 190 is joined to the pad 72 via a joining portion 74. The pad 72 is connected to the wiring pattern 21w of the substrate 21. Thus, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190 of the second holding member 62Q and the pad 72.

[0244] With this configuration, similar to the first embodiment, the semiconductor memory device 1Q can be made thinner. Furthermore, with this embodiment, the distance between the substrate 21 and the component body 30 of the capacitor 26 can be shortened. Moreover, with this embodiment, it is unnecessary to provide solder-like bonding portions for the first lead 31 and the second lead 32.

[0245] Alternatively, the first retaining member 61Q may also have a protrusion 61p that inserts into the first through hole 43 of the substrate 21, just as in the first embodiment, instead of the above configuration. The second retaining member 62Q may also have a protrusion 62p that inserts into the second through hole 45 of the substrate 21, just as in the first embodiment.

[0246] (First variation)

[0247] Figure 31 This diagram illustrates the mounting structure of the capacitor 26 in the first variation of the sixth embodiment. In the semiconductor memory device 1Q of this variation, the first holding member 61Q and the second holding member 62Q are arranged in an overlapping position in the Z direction. In this variation, compared to the sixth embodiment, the height of the first holding member 61Q (e.g., the thickness of the first portion 191a of the first holding member 61Q) is adjusted in such a way that the distance between the first lead 31 and the substrate 21 is increased. Similarly, compared to the sixth embodiment, the height of the second holding member 62Q (e.g., the thickness of the first portion 191a of the second holding member 62Q) is adjusted in such a way that the distance between the second lead 32 and the substrate 21 is increased.

[0248] With this configuration, the capacitor 26 can be installed with the first lead 31 and the second lead 32 overlapping in the Z direction. Therefore, the ease of installation of the capacitor 26 can be improved.

[0249] (Second variation)

[0250] Figure 32 This is a diagram illustrating the mounting structure of the capacitor 26 in the second modification of the sixth embodiment. The semiconductor memory device 1QA of this modification includes a first holding member 61QA and a second holding member 62QA.

[0251] In this modified example, the substrate 21 has a screw hole 81 instead of the pad 71. Similarly, the substrate 21 has a screw hole 82 instead of the pad 72. The first retaining member 61QA has a clamping portion 190 and a screw insertion hole 83 communicating with the screw hole 81 of the substrate 21. The second retaining member 62QA has a clamping portion 190 and a screw insertion hole 85 communicating with the screw hole 82 of the substrate 21. Moreover, the first retaining member 61QA is fixed to the substrate 21 by a screw 84 inserted into the screw insertion hole 83 and engaging with the screw hole 81. Similarly, the second retaining member 62QA is fixed to the substrate 21 by a screw 86 inserted into the screw insertion hole 85 and engaging with the screw hole 82.

[0252] In this modified example, the inner peripheral surfaces of screw hole 81 and screw hole 82 are respectively connected to the wiring pattern 21w of substrate 21. Therefore, the first lead 31 is connected to the wiring pattern 21w of substrate 21 via the clamping portion 190 of the first retaining member 61QA, the screw 84, and the inner peripheral surface of screw hole 81. Similarly, the second lead 32 is connected to the wiring pattern 21w of substrate 21 via the clamping portion 190 of the second retaining member 62QA, the screw 86, and the inner peripheral surface of screw hole 82.

[0253] Alternatively, the first retaining member 61QA may also have a protrusion 61p, similar to the first embodiment, instead of being fixed by screws 84. The protrusion 61p is inserted into the first through hole 43 of the substrate 21 and fixed to the substrate 21 by the third engagement portion 63. The protrusion 61p is connected to the wiring pattern 21w of the substrate 21 via the first connecting plate 44. In this case, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190 of the first retaining member 61QA, the protrusion 61p, and the first connecting plate 44.

[0254] Similarly, the second retaining member 62QA can also have a protrusion 62p, just like in the first embodiment, instead of being fixed by screws 86. The protrusion 62p is inserted into the second through hole 45 of the substrate 21 and fixed to the substrate 21 by the fourth engagement portion 64. The protrusion 62p is connected to the wiring pattern 21w of the substrate 21 via the second connecting plate 46. In this case, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190 of the second retaining member 62QA, the protrusion 62p, and the second connecting plate 46.

[0255] (Seventh Implementation)

[0256] Next, the seventh embodiment will be described. The seventh embodiment differs from the first embodiment in that it includes a holding member for clamping the substrate. The configuration, except as described below, is the same as that of the first embodiment.

[0257] Figure 33 This is a diagram illustrating the mounting structure of the capacitor 26 in the seventh embodiment. The semiconductor storage device 1R of the seventh embodiment has a holding member 220 instead of the first holding member 61 and the second holding member 62. The holding member 220 has a first holding portion 221, a second holding portion 222, a connecting portion (support portion) 223, a fixing portion 224, and a fixing portion 225.

[0258] The first holding portion 221 is located on the +Z direction side relative to the substrate 21 and is placed on the first surface S1 of the substrate 21. The first holding portion 221 has a through hole 61h for inserting a first lead 31. The second holding portion 222 is located on the -Z direction side relative to the substrate 21 and is placed on the second surface S2 of the substrate 21. The second holding portion 222 has a through hole 62h for inserting a second lead 32.

[0259] The connecting portion 223 extends along the Z direction between the first holding portion 221 and the second holding portion 222, and connects the +Y direction side end of the first holding portion 221 and the +Y direction side end of the second holding portion 222. Thus, the holding member 220 has a groove 226 along the Y direction for inserting the substrate 21, and is mounted to the substrate 21 by clamping the substrate 21 from both sides in the Z direction. The first holding portion 221, the second holding portion 222, and the connecting portion 223 are integrally formed using a heat-resistant synthetic resin.

[0260] In this embodiment, the substrate 21 has a notch 215 for mounting and holding the member 220. The notch 215 is provided at the end of the substrate 21 on the +Y direction side and is recessed in the -Y direction. A portion of the connecting portion 223 of the holding member 220 is inserted into the interior of the notch 215 and is held by the substrate 21 from both sides in the X direction.

[0261] In this embodiment, the first surface S1 of the substrate 21 has a pad 251. The pad 251 is a conductive portion for surface mounting. The fixing portion 224 of the retaining member 220 is made of metal, for example, and has a plane 224s facing the pad 251. The fixing portion 224 is joined to the pad 251 of the substrate 21 via a bonding portion 252. Thus, the retaining member 220 is fixed to the substrate 21. The bonding portion 252 is formed, for example, of a conductive bonding material (e.g., solder or conductive paste).

[0262] For example, the bonding portion 252 is provided through the same reflow soldering process as the bonding of electronic components (e.g., DRAM 24 and NAND 25) mounted on the first surface S1 of the substrate 21. In this embodiment, for example, the holding member 220 is mounted on the substrate 21 before the capacitor 26 is mounted on the holding member 220. That is, the substrate 21 is held by the holding member 220. Moreover, the holding member 220 is mounted on the substrate 21 through a reflow soldering process. Afterward, the capacitor 26 is mounted on the holding member 220, the first lead 31 is bonded to the first pad 41, and the second lead 32 is bonded to the second pad 42.

[0263] Furthermore, in this embodiment, the second surface S2 of the substrate 21 has pads 253. The pads 253 are conductive portions for surface mounting. The fixing portion 225 of the retaining member 220 is, for example, made of metal and has a plane 225s facing the pads 253. The fixing portion 225 is joined to the pads 253 of the substrate 21 via a joining portion 254. Thus, the retaining member 220 is fixed to the substrate 21. The joining portion 254 is, for example, formed of a conductive bonding material (e.g., solder or conductive paste). For example, the joining portion 254 is provided by the same reflow soldering process as the bonding of electronic components (e.g., DRAM 24 and NAND 25) mounted on the second surface S2 of the substrate 21. Thus, the retaining member 220 is fixed in a manner that clamps the substrate 21 from the Z direction.

[0264] With this configuration, similar to the first embodiment, the semiconductor memory device 1R can be made thinner. Furthermore, according to the configuration of this embodiment, since the holding member 220 is mounted on the substrate 21 with a groove 226, positional displacement of the holding member 220 during surface mounting can be suppressed.

[0265] (Modified Example)

[0266] Figure 34 This diagram illustrates the mounting structure of the capacitor 26 in a modified example of the seventh embodiment. In this modified example of the semiconductor memory device 1S, the first holding portion 221 has a clamping portion 190 for holding the first lead 31. The second holding portion 222 has a clamping portion 190 for holding the second lead 32. Both the first holding portion 221 and the second holding portion 222 have fixing portions 224.

[0267] The first surface S1 of the substrate 21 has a pad 251. The pad 251 is connected to the wiring pattern 21w of the substrate 21. In this embodiment, the fixing portion 224 of the first holding portion 221 is connected to the clamping portion 190 of the first holding portion 221. The fixing portion 224 and the clamping portion 190 of the first holding portion 221 are made of metal and are conductive. The first lead 31 is clamped by the clamping portion 190 of the first holding portion 221, thereby being electrically connected to the clamping portion 190. Thus, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190, the fixing portion 224, and the pad 251 of the first holding portion 221.

[0268] The second surface S2 of the substrate 21 has pads 253. The pads 253 are conductive portions for surface mounting. The fixing portion 225 of the second holding portion 222 is bonded to the pads 253 via a bonding portion 254. The bonding portion 254 is formed, for example, of a conductive bonding material (e.g., solder or conductive paste). For example, the bonding portion 254 is provided by the same reflow soldering process as the bonding of electronic components (e.g., DRAM 24 and NAND 25) mounted on the second surface S2 of the substrate 21.

[0269] The pad 253 is connected to the wiring pattern 21w of the substrate 21. In this embodiment, the fixing portion 225 of the second holding portion 222 is connected to the clamping portion 190 of the second holding portion 222. The fixing portion 225 and the clamping portion 190 of the second holding portion 222 are made of metal and are conductive. The second lead 32 is clamped by the clamping portion 190 of the second holding portion 222, thereby being electrically connected to the clamping portion 190. Thus, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the clamping portion 190, the fixing portion 225, and the pad 253 of the second holding portion 222.

[0270] In this embodiment, for example, the holding member 220 is mounted on the substrate 21 before the capacitor 26 is mounted on the holding member 220. That is, the substrate 21 is held by the holding member 220. Moreover, the holding member 220 is mounted on the substrate 21 by a reflow soldering process. Then, the capacitor 26 is mounted on the holding member 220. In this embodiment, by having the clamping portion 190 of the first holding portion 221 clamp the first lead 31 and the clamping portion 190 of the second holding portion 222 clamp the second lead 32, the first lead 31 and the second lead 32 are connected to the wiring pattern 21w of the substrate 21. That is, the capacitor 26 is fixed to the holding member 220 and the first lead 31 and the second lead 32 are electrically connected to the substrate 21 simultaneously.

[0271] (Eighth Implementation Method)

[0272] Next, the eighth embodiment will be described. The eighth embodiment differs from the first embodiment in that it includes an axial capacitor. All other configurations described below are the same as those in the first embodiment.

[0273] Figure 35 This is a top view showing the substrate unit 20 of the eighth embodiment. The substrate unit 20 of the semiconductor memory device 1S of the eighth embodiment has a capacitor 26A as an axial capacitor instead of a capacitor 26. The capacitor 26A is an example of an "electronic component". Furthermore, the substrate unit 20 has a first holding member 310 and a second holding member 320 instead of a first holding member 61 and a second holding member 62.

[0274] Figure 36 This is a diagram illustrating the mounting structure of capacitor 26A according to the eighth embodiment. Figure 37 It is along Figure 36 The diagram shows a cross-sectional view along line F37-F37 of the mounting structure. First, the substrate 21 will be described. The substrate 21 has, for example, a notch 21c, a first through-hole 43, a first connecting pad 44, a second through-hole 45, and a second connecting pad 46. The notch 21c is, for example, located at the end of the substrate 21 in the +Y direction. The notch 21c is larger than the outer shape of the component body 30 of the capacitor 26A. The first through-hole 43 and the first connecting pad 44 are located on the +X direction side relative to the notch 21c. The second through-hole 45 and the second connecting pad 46 are located on the -X direction side relative to the notch 21c. The details of the first through-hole 43, the first connecting pad 44, the second through-hole 45, and the second connecting pad 46 are the same as in the first embodiment.

[0275] Next, capacitor 26A will be described. Capacitor 26A includes, for example, a component body 30, a first lead 31, and a second lead 32. The component body 30 is cylindrical. The component body 30 is disposed in a notch 21c of the substrate 21. Therefore, the component body 30 does not overlap with the substrate 21 when viewed from the thickness direction (Z direction). In this embodiment, at least a portion of the component body 30 is parallel to the substrate 21 in both the X and Y directions. For example, the center C of the component body 30 in the Z direction is parallel to the substrate 21 in both the X and Y directions.

[0276] The first lead 31 protrudes from the first end face 30s1 (the end face in the +X direction) of the component body 30 along the axial direction of the component body 30. In this embodiment, the first lead 31 protrudes from the first end face 30s1 of the component body 30 in the +X direction. On the other hand, the second lead 32 protrudes from the second end face 30s2 (the end face in the -X direction) of the component body 30 along the axial direction of the component body 30. In this embodiment, the second lead 32 protrudes from the second end face 30s2 of the component body 30 in the -X direction. That is, the first lead 31 and the second lead 32 protrude from the component body 30 in opposite directions.

[0277] Next, the first holding member 310 will be described. The first holding member 310 is a holding member that holds the first lead 31. The first holding member 310 is disposed on the +X direction side relative to the capacitor 26A. The first holding member 310 is fixed to the substrate 21, and the capacitor 26A is fixed to the substrate 21 by holding the first lead 31. The first holding member 310 is, for example, made of metal. The first holding member 310 has, for example, a holding body 311 and a fixing part 312.

[0278] The retaining body 311 is disposed in the notch 21c of the substrate 21, and holds the first lead 31 inside the notch 21c of the substrate 21. In this embodiment, the retaining body 311 has a clamping portion 311a. The clamping portion 311a is elastic and clamps the first lead 31, thereby retaining the first lead 31. The clamping portion 311a is an example of a "receiving portion capable of retaining the lead". For example, the clamping portion 311a includes a leaf spring 351 (see reference). Figure 37 The leaf spring 351 has a first part 351a, a second part 351b, and a third part 351c.

[0279] The first portion 351a forms the base of the clamping portion 311a. The first portion 351a is located, for example, on the -Z direction side relative to the first lead 31. The second portion 351b extends from the end of the first portion 351a on the -Y direction side towards the +Z direction. The third portion 351c extends from the end of the first portion 351a on the +Y direction side towards the +Z direction. At least a portion of each of the second portion 351b and the third portion 351c is bent close to each other. Therefore, the gap between the second portion 351b and the third portion 351c is at least partially smaller than the diameter of the first lead 31. This restricts the first lead 31, clamped by the clamping portion 311a, from disengaging in the +Z direction. Alternatively, a housing 313 covering the holding portion body 311 may be installed on the holding portion body 311.

[0280] The fixing part 312 is connected to the holding part body 311 and fixed to the substrate 21 (see reference). Figure 36 For example, the fixing part 312 has a first part 312a, a second part 312b and a third part 312c.

[0281] The first part 312a is connected to the retaining body 311 in the Z direction from the side opposite to the first lead 31. For example, the first part 312a is connected to the first part 351a of the clamping part 311a of the retaining body 311 (see reference). Figure 37 The first part 312a extends from the holding part body 311 in the +X direction. When viewed from the Y direction, the first part 312a is disposed in the notch 21c of the substrate 21.

[0282] The second portion 312b bends in the +X direction from the end of the first portion 312a (i.e., the end of the first portion 312a that separates from the holding body 311) and extends in the +Z direction. For example, the second portion 312b extends to the +Z direction side further than the first surface S1 of the substrate 21. When viewed from the Y direction, the second portion 312b is disposed in the notch 21c of the substrate 21.

[0283] The third portion 312c extends from the +Z end of the second portion 312b in the +X direction. When viewed from the Y direction, the third portion 312c extends across the position overlapping with the notch 21c of the substrate 21 and the position overlapping with the first surface S1 of the substrate 21. The portion of the third portion 312c that overlaps with the first surface S1 of the substrate 21 has a protrusion 61p.

[0284] The protrusion 61p is inserted into the first through hole 43 of the substrate 21 and fixed to the first connecting plate 44 by the joining part 63. In this embodiment, the first connecting plate 44 is connected to the wiring pattern 21w of the substrate 21. Therefore, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the holding part body 311, the fixing part 312, and the first connecting plate 44.

[0285] Next, the second holding member 320 will be described. The second holding member 320 is a holding member that holds the second lead 32. The second holding member 320 is disposed on the -X direction side relative to the capacitor 26A. The second holding member 320 is fixed to the substrate 21, and the capacitor 26A is fixed to the substrate 21 by holding the second lead 32. The second holding member 320 is, for example, made of metal. The second holding member 320 has, for example, a holding body 321 and a fixing part 322.

[0286] The retaining part body 321 is disposed in the notch 21c of the substrate 21, and holds the second lead 32 inside the notch 21c of the substrate 21. In this embodiment, the retaining part body 321 has a clamping part 321a. The clamping part 321a is elastic and clamps the second lead 32, thereby retaining the second lead 32. The clamping part 321a is an example of a "receiving part capable of holding the lead". For example, the clamping part 321a, like the clamping part 311a of the first retaining member 310, includes a leaf spring 351. Alternatively, a housing 323 covering the retaining part body 321 may be installed on the retaining part body 321.

[0287] The fixing part 322 is connected to the holding part body 321 and fixed to the substrate 21. For example, the fixing part 322 has a first part 322a, a second part 322b and a third part 322c.

[0288] The first part 322a is connected to the retaining body 321 in the Z direction from the side opposite to the second lead 32. For example, the first part 322a is connected to the first part 351a of the clamping part 321a of the retaining body 321 (see reference). Figure 37 The first part 322a extends from the holding body 321 in the -X direction. When viewed from the Y direction, the first part 322a is disposed in the notch 21c of the substrate 21.

[0289] The second portion 322b bends in the +Z direction from the -X end of the first portion 322a (i.e., the end of the first portion 322a that separates from the holding body 321) and extends in the Z direction. For example, the second portion 322b extends to the +Z direction side further than the first surface S1 of the substrate 21. When viewed from the Y direction, the second portion 322b is disposed in the notch 21c of the substrate 21.

[0290] The third portion 322c extends from the end of the second portion 322b in the +Z direction toward the -X direction. When viewed from the Y direction, the third portion 322c extends across the position overlapping with the notch 21c of the substrate 21 and the position overlapping with the first surface S1 of the substrate 21. The portion of the third portion 322c that overlaps with the first surface S1 of the substrate 21 has a protrusion 62p.

[0291] The protrusion 62p is inserted into the second through hole 45 of the substrate 21 and fixed to the second connecting plate 46 by the connecting portion 64. In this embodiment, the second connecting plate 46 is connected to the wiring pattern 21w of the substrate 21. Therefore, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the holding body 321, the fixing portion 322, and the second connecting plate 46.

[0292] With this configuration, since the component body 30 of the capacitor 26A is arranged at a position offset from the substrate 21, the frame 10 can be made thinner compared to the case where the substrate 21 and the component body 30 of the capacitor 26A are arranged overlapping in the Z direction.

[0293] In this embodiment, capacitor 26A is supported by a first retaining member 310 and a second retaining member 320 separately disposed on both sides of component body 30. With this configuration, the component body 30 can be held more securely than if the retaining members for holding the first lead 31 and the second lead 32 were concentrated on one side of the component body 30. This improves the shock resistance of the semiconductor memory device 1S. Furthermore, with the first retaining member 310 and the second retaining member 320 separately disposed on both sides of the component body 30, even when an external force is applied to the component body 30, larger stresses are less likely to act on the joint (e.g., solder joint) that fixes the first lead 31 and the second lead 32. Therefore, the reliability of the semiconductor memory device 1S can be improved.

[0294] (First variation)

[0295] Figure 38 This is a diagram illustrating the mounting structure of a first modified example of the eighth embodiment. In the first modified example, the semiconductor memory device 1SA has a first holding member 310A instead of the first holding member 310, and a second holding member 320A instead of the second holding member 320.

[0296] A first pad 71 and a second pad 72 for surface mounting are provided on the first surface S1 of the substrate 21. The first pad 71 is located on the +X direction side relative to the notch 21c. The second pad 72 is located on the -X direction side relative to the notch 21c.

[0297] In this modified example, the first retaining member 310A (e.g., the third portion 312c of the fixing portion 312 of the first retaining member 310A) is fixed to the first pad 71 via the joining portion 73. That is, the first retaining member 310A is mounted on the surface of the first surface S1 of the substrate 21. In this embodiment, the first pad 71 is connected to the wiring pattern 21w of the substrate 21. Therefore, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first retaining member 310A and the first pad 71.

[0298] Similarly, the second retaining member 320A (e.g., the third portion 322c of the fixing portion 322 of the second retaining member 320A) is fixed to the second pad 72 via the joining portion 74. That is, the second retaining member 320A is mounted on the surface of the first surface S1 of the substrate 21. In this embodiment, the second pad 72 is connected to the wiring pattern 21w of the substrate 21. Therefore, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the second retaining member 320A and the second pad 72.

[0299] According to the configuration of this embodiment, during the reflow soldering process in the manufacture of capacitor 26A, capacitor 26A is supported by a first holding member 310A and a second holding member 320A separately arranged on both sides of the component body 30. Therefore, capacitor 26A does not need to be directly supported by a transport tray for reflow soldering. That is, capacitor 26A does not come into contact with the transport tray for reflow soldering. Therefore, even if the first holding member 310A and the second holding member 320A are installed at an angle relative to the first solder pad 71 and the second solder pad 72 during the mounting process before reflow soldering, for example, by heating the joints 73 and 74, which are solder, the tilt of the first holding member 310A and the second holding member 320A can be corrected by utilizing the self-alignment effect brought about by the surface tension of the solder. As a result, the workability of capacitor 26A can be improved.

[0300] (Second variation)

[0301] Figure 39 This is a diagram illustrating the mounting structure of a second modified example of the eighth embodiment. In the second modified example, the semiconductor memory device 1SB has a first holding member 310B instead of the first holding member 310, and a second holding member 320B instead of the second holding member 320.

[0302] The substrate 21 is provided with a first screw hole 81 and a second screw hole 82. The first screw hole 81 is located on the +X direction side relative to the notch 21c. The second screw hole 82 is located on the -X direction side relative to the notch 21c.

[0303] In this modified example, the first retaining member 310B (e.g., the third portion 312c of the fixing portion 312 of the first retaining member 310B) has a screw insertion hole 83 communicating with the first screw hole 81 of the substrate 21. The first retaining member 310B is fixed to the substrate 21 by a screw 84 inserted into the screw insertion hole 83 and engaging with the first screw hole 81. In this embodiment, the inner surface of the first screw hole 81 is connected to the wiring pattern 21w of the substrate 21. Therefore, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first retaining member 310B and the screw 84.

[0304] In this modified example, the second retaining member 320B (e.g., the third portion 322c of the fixing portion 322 of the second retaining member 320B) has a screw insertion hole 85 communicating with the second screw hole 82 of the substrate 21. The second retaining member 320B is fixed to the substrate 21 by a screw 86 inserted into the screw insertion hole 85 and engaging with the second screw hole 82. In this embodiment, the inner surface of the second screw hole 82 is connected to the wiring pattern 21w of the substrate 21. Therefore, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the second retaining member 320B and the screw 86.

[0305] (Ninth Implementation)

[0306] Next, the ninth embodiment will be described. The ninth embodiment differs from the eighth embodiment in that the first lead 31 and the second lead 32 are fixed to the through hole of the retaining member. The configuration other than that described below is the same as that of the eighth embodiment.

[0307] Figure 40 This is a top view showing the substrate unit 20 according to the ninth embodiment. The substrate unit 20 of the semiconductor memory device 1T according to the ninth embodiment has a first holding member 330 and a second holding member 340. The first holding member 330 and the second holding member 340 are both made of metal. The first holding member 330 and the second holding member 340 each have a through hole 171h. The through hole 171h extends through the first holding member 330 or the second holding member 340 in the Z direction. The through hole 171h is disposed in the region that overlaps with the notch 21c in the Z direction. The through hole 171h is an example of a "lead-holding portion".

[0308] The first lead 31 includes a base 31x and a bent portion 31y. The base 31x protrudes linearly from the component body 30 in the +X direction. The bent portion 31y is bent relative to the base 31x, for example, in the +Z direction, and is inserted into the through hole 171h of the first retaining member 330. The bent portion 31y is fixed to the first retaining member 330 by a joint 156.

[0309] Similarly, the second lead 32 includes a base 32x and a bent portion 32y. The base 32x protrudes linearly from the component body 30 in the -X direction. The bent portion 32y is bent relative to the base 32x in the +Z direction and is inserted into the through hole 171h of the second retaining member 340. The bent portion 32y is fixed to the second retaining member 340 by the joining portion 157.

[0310] The other configurations of the first retaining member 330 and the second retaining member 340 are the same as those of the first retaining member 310 and the second retaining member 320 in the eighth embodiment. With this configuration, since the component body 30 of the capacitor 26A is arranged at a position offset from the substrate 21, the frame 10 can be made thinner compared to the case where the substrate 21 and the component body 30 of the capacitor 26A are arranged overlapping in the Z direction.

[0311] (First variation)

[0312] Figure 41 This is a diagram illustrating the mounting structure of a first modified example of the ninth embodiment. In the first modified example, the semiconductor memory device 1TA has a first holding member 330A instead of the first holding member 330, and a second holding member 340A instead of the second holding member 340.

[0313] The first retaining member 330A and the second retaining member 340A are the same as in the first variation of the eighth embodiment, and are fixed to the first pad 71 and the second pad 72 provided on the first surface S1 of the substrate 21. That is, the first retaining member 330A and the second retaining member 340A are mounted on the surface of the first surface S1 of the substrate 21. The other configurations of the first retaining member 330A and the second retaining member 340A are the same as those of the first retaining member 330 and the second retaining member 340 in the ninth embodiment.

[0314] (Second variation)

[0315] Figure 42 This is a diagram illustrating the mounting structure of a second modified example of the ninth embodiment. In the second modified example, the semiconductor memory device 1TB has a first holding member 330B instead of the first holding member 330, and a second holding member 340B instead of the second holding member 340.

[0316] The first retaining member 330B and the second retaining member 340B are the same as those in the second variation of the eighth embodiment, and are fixed to the substrate 21 by screws 84 and 86. The other configurations of the first retaining member 330B and the second retaining member 340B are the same as those of the first retaining member 330 and the second retaining member 340 in the ninth embodiment.

[0317] (Tenth Implementation)

[0318] Next, the tenth embodiment will be described. The tenth embodiment differs from the eighth embodiment in that the first lead 31 and the second lead 32, which extend along the X direction, are fixed to the through hole of the retaining member. The configuration other than that described below is the same as the eighth embodiment.

[0319] Figure 43 This is a top view showing the substrate unit 20 of the tenth embodiment. Figure 44 It is along Figure 43 The cross-sectional view along line F44-F44 shows the mounting configuration. The substrate unit 20 of the semiconductor memory device 1U according to the tenth embodiment has a first holding member 350 and a second holding member 360. Both the first holding member 350 and the second holding member 360 are made of metal.

[0320] The first retaining member 350 has a first through hole 61h and a first groove 61g. The first through hole 61h is open in the X direction. The first retaining member 350 retains the second lead portion 31b of the first lead 31 by allowing the second lead portion 31b of the first lead 31 to pass through the first through hole 61h. Alternatively, the first through hole 61h may be omitted. The first groove 61g extends in the X direction. For example, the first groove 61g is open in the -Z direction. The first lead portion 31a of the first lead 31 passing through the first through hole 61h is located in the first groove 61g. The first groove 61g suppresses positional displacement of the first lead portion 31a of the first lead 31 in the Y direction. The first groove 61g is an example of a "receiving portion capable of retaining the lead". The first lead portion 31a is fixed to the first groove 61g by a connecting portion 156.

[0321] The second retaining member 360 has a second through hole 62h and a second groove 62g. The second through hole 62h is open in the X direction. The second retaining member 360 retains the second lead portion 32b of the second lead 32 by allowing the second lead portion 32b of the second lead 32 to pass through the second through hole 62h. Alternatively, the second through hole 62h may be omitted. The second groove 62g extends in the X direction. For example, the second groove 62g is open in the -Z direction. The first lead portion 32a of the second lead 32 passing through the second through hole 62h is located in the second groove 62g. The second groove 62g suppresses positional displacement of the first lead portion 32a of the second lead 32 in the Y direction. The second groove 62g is an example of a "receiving portion capable of retaining the lead". The first lead portion 32a is fixed to the second groove 62g by a connecting portion 157.

[0322] The other configurations of the first holding member 350 and the second holding member 360 are the same as those of the first holding member 310 and the second holding member 320 in the eighth embodiment. With this configuration, since the component body 30 of the capacitor 26A is arranged at a position offset from the substrate 21, the frame 10 can be made thinner compared to the case where the substrate 21 and the component body 30 of the capacitor 26A are arranged overlapping in the Z direction.

[0323] (First variation)

[0324] Figure 45 This is a diagram illustrating the mounting structure of a first modified example of the tenth embodiment. In the first modified example, the semiconductor memory device 1UA has a first holding member 350A instead of the first holding member 350, and a second holding member 360A instead of the second holding member 360.

[0325] The first retaining member 350A and the second retaining member 360A are fixed to the first pad 71 and the second pad 72 provided on the first surface S1 of the substrate 21, similar to the first variation of the eighth embodiment. That is, the first retaining member 350A and the second retaining member 360A are mounted on the surface of the first surface S1 of the substrate 21. The other configurations of the first retaining member 350A and the second retaining member 360A are the same as those of the first retaining member 350 and the second retaining member 360 in the tenth embodiment.

[0326] (Second variation)

[0327] Figure 46 This is a diagram illustrating the mounting structure of a second modified example of the tenth embodiment. In the second modified example, the semiconductor memory device 1UB has a first holding member 350B instead of the first holding member 350, and a second holding member 360B instead of the second holding member 360.

[0328] The first retaining member 350B and the second retaining member 360B are fixed to the substrate 21 by screws 84 and 86, similar to the second variation of the eighth embodiment. The other configurations of the first retaining member 350B and the second retaining member 360B are the same as those of the first retaining member 350 and the second retaining member 360 in the tenth embodiment.

[0329] (Eleventh Implementation Method)

[0330] Next, the eleventh embodiment will be described. The eleventh embodiment differs from the eighth embodiment in that both the first lead 31 and the second lead 32 have two bent sections. The configuration other than that described below is the same as that of the eighth embodiment.

[0331] Figure 47This is a top view showing the substrate unit 20 of the eleventh embodiment. Figure 48 It is along Figure 47 The diagram shows a cross-sectional view along line F48-F48 of the mounting configuration. The substrate unit 20 of the semiconductor memory device 1V according to the eleventh embodiment has a first holding member 61H and a second holding member 62H. Both the first holding member 61H and the second holding member 62H are made of metal.

[0332] In this embodiment, the first lead 31 and the second lead 32 of the capacitor 26A each have two bent portions. For example, in addition to the first lead portion 31a and the second lead portion 31b described above, the first lead 31 also has a third lead portion 31c and a fourth lead portion 31d. The third lead portion 31c protrudes from the first end face 30s1 of the component body 30 in the +X direction. The fourth lead portion 31d bends from the +X direction end of the third lead portion 31c in the +Z direction and extends along the Z direction. The +Z direction end of the fourth lead portion 31d is connected to the second lead portion 31b. In this embodiment, the second lead portion 31b refers to the portion that extends parallel to the first surface S1 of the substrate 21 between the fourth lead portion 31d and the first lead portion 31a.

[0333] Similarly, in addition to the first lead portion 32a and the second lead portion 32b described above, the second lead 32 also has a third lead portion 32c and a fourth lead portion 32d. The third lead portion 32c protrudes from the second end face 30s2 of the component body 30 in the -X direction. The fourth lead portion 32d bends from the end of the third lead portion 32c in the -X direction direction in the +Z direction and extends along the Z direction. The end of the fourth lead portion 32d in the +Z direction direction is connected to the second lead portion 32b. In this embodiment, the second lead portion 32b refers to the portion that extends parallel to the first surface S1 of the substrate 21 between the fourth lead portion 32d and the first lead portion 32a.

[0334] The first retaining member 61H does not have a solder-like joint, but instead has a locking mechanism 121 for fixing the first lead 31. The locking mechanism 121, for example, detachably fixes the first lead 31. The locking mechanism 121 is an example of a "lead-holding portion". The locking mechanism 121, for example, has a base 130, a first pressing portion 131, and a second pressing portion 132. The first pressing portion 131 and the second pressing portion 132 are examples of "leaf springs". In this embodiment, the first lead 31 is connected to the wiring pattern 21w of the substrate 21 via the first retaining member 61H and the connecting disc 44. Furthermore, the configuration of the first retaining member 61H is the same as that of the first retaining member 61H in the second embodiment.

[0335] Similarly, the second retaining member 62H does not have a solder-like joint, but instead has a locking mechanism 121 for fixing the second lead 32. The locking mechanism 121, for example, detachably fixes the second lead 32. In this embodiment, the second lead 32 is connected to the wiring pattern 21w of the substrate 21 via the second retaining member 62H and the connecting pad 46. Furthermore, the configuration of the second retaining member 62H is the same as that of the second retaining member 62H in the second embodiment.

[0336] With this configuration, since the component body 30 of the capacitor 26A is arranged at a position offset from the substrate 21, the frame 10 can be made thinner compared to the case where the substrate 21 and the component body 30 of the capacitor 26A are arranged overlapping in the Z direction.

[0337] Furthermore, the substrate unit 20 of the semiconductor memory device 1V in the eleventh embodiment can also replace the first holding member 61H and the second holding member 62H, and have the same first holding member 61D and second holding member 62D as the fourth variation of the first embodiment (see reference). Figure 49 Alternatively, it may have the same first retaining member 61 and second retaining member 62 as the first embodiment (see reference). Figure 50 ).

[0338] The mounting structure of the axial capacitor 26A has been described above in eight to eleven embodiments. However, the mounting structure of the axial capacitor 26A is not limited to the above examples, and the holding members described in the first to seventh embodiments may also be provided on the first lead 31 and the second lead 32 respectively. For example, holding members 230 formed by a printed circuit board may also be provided on the first lead 31 and the second lead 32 respectively (see reference). Figure 28 ).

[0339] The above describes several implementation methods and variations. However, the implementation methods and variations are not limited to the examples described above. For example, the various implementation methods and variations described above can also be appropriately combined to achieve the desired results.

[0340] For example, the above-described embodiments and variations can be implemented by modifying the following viewpoints (1) to (3). That is, (1) as a method of fixing the holding member or holding part, the holding member or holding part for holding the first lead 31 or the second lead 32 can be a pad surface mounted on the surface of the substrate 21, or it can have a protrusion that is inserted into a through hole of the substrate 21 and fixed thereto. (2) as a method of fixing the lead, the first lead 31 and the second lead 32 can be fixed to the pad surface of the substrate 21 by a joint such as solder, or they can be inserted into a through hole of the substrate 21 and fixed thereto. (3) Regarding the position, orientation, or shape of capacitors 26 and 26A, the first lead 31 and the second lead 32 can be arranged on both sides of substrate 21 in the Z direction, or the first lead 31 and the second lead 32 can be concentrated on the first surface S1 side (or the second surface side) of substrate 21. Furthermore, a portion of the component body 30 of capacitors 26 and 26A can be held by a holding member or holding part facing substrate 21 in the Y direction, or the first lead 31 and the second lead 32 can be respectively positioned as follows: Figure 13 The bending occurs in two or more stages as shown. Furthermore, variations can be achieved through any combination of these viewpoints (1) to (3). In addition, in each embodiment or variation, the retaining member or retaining part can be fixed to the substrate 21 by a fixing member such as a screw.

[0341] According to another viewpoint, capacitors 26 and 26A can also be fixed to substrate 21 without relying on the aforementioned retaining components. For example, capacitors 26 and 26A can also be configured such that the first lead 31 and the second lead 32 are separately arranged on both sides of substrate 21 in the Z direction, the first lead 31 is fixed to the first pad 41 of the first surface S1 of substrate 21 through the first bonding portion 51, and the second lead 32 is fixed to the second pad 42 of the second surface S2 of substrate 21 through the second bonding portion 52.

[0342] According to at least one embodiment described above, a semiconductor memory device includes a substrate, electronic components, and a holding member. The electronic components have a component body disposed at a position offset from the substrate in a direction parallel to a first surface of the substrate, and a first lead protruding from the component body in a direction approaching the substrate. The holding member is fixed to the substrate and holds the first lead. With this configuration, a semiconductor memory device suitable for thinning can be provided.

[0343] While several embodiments of the invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, as well as within the scope of the invention as described in the claims and its equivalents.

[0344] Explanation of reference numerals in the attached figures

[0345] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1J, 1K, 1L, 1M, 1N, 1P, 1Q, 1R, 1S… Semiconductor memory device, 21… Substrate, S1… First side of substrate, S2… Second side of substrate, 26, 26A… Capacitor (electronic component), 30… Component body, 31… First lead, 31a… First lead portion, 31b… Second lead portion, 31c… Third lead portion, 31d… Fourth lead portion, 32… Second lead, 32a… First lead portion, 32b… Second lead Part, 32c…Third lead portion, 32d…Fourth lead portion, 45…Second through hole, 51…First joint, 52…Second joint, 61, 61A, 61B, 61C, 61D, 61E, 61H, 61J, 61L, 61Q…First retaining member, 61h…Through hole (bearing part), 61p…Protrusion, 62, 62A, 62B, 62C, 62D, 62E, 62H, 62J, 62L, 62Q…Second retaining member, 62h…Through hole (bearing part), 62p…Protrusion, 91…Groove (bearing part) 121…Slot (receiving part), 131…First pressing part (leaf spring), 132…Second pressing part (leaf spring), 141…First notch, 142…Second notch, 150…Retaining member, 151…Main body (insulating part), 152…First conductive part, 153…Second conductive part, 160…Main body bearing part, 180…Retaining member, 181…First retaining part, 182…Second retaining part, 183…Frame (insulating part), 200…Retaining member, 201…First retaining part, 202…Second retaining part, 2 03… Support part (insulating part), 220… Holding member, 221… First holding part, 222… Second holding part, 223… Connecting part, 224… Fixing part, 230… Holding member, 310, 310A, 310B… First holding member, 320, 320A, 320B… Second holding member, 330, 330A, 330B… First holding member, 340, 340A, 340B… Second holding member, 350, 350A, 350B… First holding member, 360, 360A, 360B… Second holding member.

Claims

1. A semiconductor memory device comprising: A substrate having a first surface and a second surface opposite to the first surface; A capacitor has a component body, a first lead, and a second lead. The component body is disposed at a position offset from the substrate in a direction parallel to a first surface. The first lead and the second lead protrude from the component body in a direction approaching the substrate. A first retaining member is fixed to the substrate and holds the first lead. The second retaining component, which is separate from the first retaining component, holds the second lead. The first retaining member is fixed to the first surface, and the second retaining member is fixed to the second surface. The first lead includes a portion of the substrate that overlaps with the first surface in the thickness direction. The first retaining member does not overlap with the second retaining member in the thickness direction of the substrate.

2. The semiconductor memory device as claimed in claim 1, At least a portion of the capacitor is arranged side-by-side with the substrate in a direction parallel to the first surface.

3. The semiconductor memory device as described in claim 1 or 2, It also includes a bonding portion located outside the first retaining member, which electrically connects the first lead to the substrate.

4. The semiconductor memory device as claimed in claim 3, The first lead includes a first lead portion and a second lead portion located between the first lead portion and the component body. The bonding portion electrically connects the first lead portion to the substrate. The first retaining component holds the second lead portion.

5. The semiconductor memory device as described in claim 1 or 2, At least a portion of the first retaining member is conductive. The first retaining component electrically connects the first lead to the substrate.

6. The semiconductor memory device as claimed in claim 1 or 2, The substrate has a notch at one end. The first retaining member is inserted into the notch.

7. The semiconductor memory device as claimed in claim 1 or 2, The first retaining component has a locking mechanism for securing the first lead.

8. The semiconductor memory device as claimed in claim 7, The locking mechanism includes a leaf spring connected to the first lead.

9. The semiconductor memory device as claimed in claim 4, The substrate also has a second through hole. The first retaining member has a retaining body and a protrusion. The retaining body has a first through hole in a direction intersecting the direction from the member body toward the substrate. The protrusion connects the first through hole and a second through hole. The first retaining member is fixed to the substrate via the protrusion.

10. The semiconductor memory device as claimed in claim 1 or 2, The retaining member has a clamping portion that is elastic and clamps the first lead.

11. The semiconductor memory device as claimed in claim 1 or 2, The substrate has a notch. The main body of the component is disposed in the notch. The capacitor has a first lead protruding from the main body of the component and a second lead protruding to the side opposite to the first lead. The second retaining member is disposed on the opposite side of the first retaining member relative to the notch, is fixed to the substrate, and holds the second lead.

Images