一种离子迁移谱中双平行栅离子门的控制方法

By adjusting the voltage of the ion gate electrode to form non-uniform and uniform DC electric fields, ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters are achieved, solving the problem of insufficient detection sensitivity and resolution in ion mobility spectra and obtaining ion mobility spectra with both high sensitivity and high resolution.

CN116631839BActive Publication Date: 2026-07-17DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES
Filing Date
2022-04-22
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing ion mobility spectrometry techniques struggle to achieve integrated ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters during ion-gated implantation, resulting in insufficient detection sensitivity and resolution.

Method used

By adjusting the voltage on the first and second gate electrodes of the ion gate, non-uniform and uniform DC electric fields are formed to achieve ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters. A dual parallel gate ion gate control method is adopted.

Benefits of technology

This method achieves high sensitivity and high resolution ion migration spectra, improving detection capabilities without requiring modification of the ion migration tube structure. It is simple and widely applicable.

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Abstract

本发明公开一种离子迁移谱中双平行栅离子门的控制方法,通过调控离子门的第一栅门电极、第二栅门电极上的电压,可以在离子门控注入的过程中,一体化实现离子预富集、离子无歧视门控注入和离子团时空压缩。离子门开门之前的较短时间间隔内,于电离区内形成强度逐渐降低的非均匀直流电场对其中的离子流进行离子富集;离子门开门期间,利用离子门双平行栅之间所形成高强度注入电场的加速效应将电离区紧邻离子门区域内的离子无歧视地注入迁移区中形成离子团;最终获得兼具高灵敏度和高分辨能力的离子迁移谱图。本发明无需对离子迁移管进行特殊改造,方法简单,普适性强。
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