一种离子迁移谱中双平行栅离子门的控制方法
By adjusting the voltage of the ion gate electrode to form non-uniform and uniform DC electric fields, ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters are achieved, solving the problem of insufficient detection sensitivity and resolution in ion mobility spectra and obtaining ion mobility spectra with both high sensitivity and high resolution.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES
- Filing Date
- 2022-04-22
- Publication Date
- 2026-07-17
AI Technical Summary
Existing ion mobility spectrometry techniques struggle to achieve integrated ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters during ion-gated implantation, resulting in insufficient detection sensitivity and resolution.
By adjusting the voltage on the first and second gate electrodes of the ion gate, non-uniform and uniform DC electric fields are formed to achieve ion pre-enrichment, non-discriminatory injection, and spatiotemporal compression of ion clusters. A dual parallel gate ion gate control method is adopted.
This method achieves high sensitivity and high resolution ion migration spectra, improving detection capabilities without requiring modification of the ion migration tube structure. It is simple and widely applicable.
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Figure CN116631839B_ABST