A semiconductor packaging method

Abstract

A semiconductor packaging method includes: forming a bonding glue layer, a metal layer and a packaging structure on one side of a temporary carrier; then, irradiating the bonding glue layer with ultraviolet light by using an optical debonding process; when the packaging structure and the temporary carrier are not completely debonded by the optical debonding process, determining that there is a first metal area in the metal layer which directly contacts part of the temporary carrier, and debonding the packaging structure and the temporary carrier by using an enhanced debonding process; the enhanced debonding process includes: grinding part of the thickness of the temporary carrier from the side surface of the temporary carrier away from the metal layer, and applying a cooling liquid to the temporary carrier during the grinding process to cause cracks in the interior of the temporary carrier; placing the temporary carrier with cracks in a wet etching solution, and the wet etching solution penetrates into the first metal area through the cracks and dissolves and removes the first metal area. The semiconductor packaging method can successfully debond the packaging structure and the temporary carrier.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a semiconductor packaging method. Background Technology

[0002] A semiconductor packaging method, such as Figure 1 As shown, the process includes: applying a bonding adhesive layer 4 onto a temporary carrier 2; sputtering a metal layer 3 onto the surface of the bonding adhesive layer 4 facing away from the temporary carrier 2; fabricating an encapsulation structure 1 on the side of the metal layer 3 facing away from the bonding adhesive layer 4; and then unbonding the encapsulation structure 1 from the temporary carrier 2 (not shown).

[0003] However, when debonding the package structure 1 from the temporary carrier 2, there are cases where the package structure 1 cannot be successfully debonded from the temporary carrier 2, resulting in waste wafers. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the problem that the packaging structure cannot be successfully debonded from the temporary carrier in the prior art.

[0005] To address the aforementioned technical problems, this invention provides a semiconductor packaging method, comprising: providing a temporary carrier; forming a bonding adhesive layer on one side surface of the temporary carrier; forming a metal layer on the side surface of the bonding adhesive layer facing away from the temporary carrier; forming a packaging structure on the side of the metal layer facing away from the temporary carrier; after forming the packaging structure, irradiating the bonding adhesive layer with ultraviolet light using an optical debonding process; when the packaging structure and the temporary carrier fail to debond through the optical debonding process, determining that a first metal region exists in the metal layer that is in direct contact with a portion of the temporary carrier, and using an enhanced debonding process to debond the packaging structure and the temporary carrier; the enhanced debonding process comprising: grinding a portion of the thickness of the temporary carrier from the side surface of the temporary carrier facing away from the metal layer, applying a coolant to the temporary carrier during the grinding process to generate cracks inside the temporary carrier; providing a wet etching solution; placing the cracked temporary carrier in the wet etching solution, wherein the wet etching solution penetrates through the cracks to the first metal region and dissolves and removes the first metal region.

[0006] Optionally, the material of the metal layer includes Al.

[0007] Optionally, the wet etching solution includes a NaOH solution, wherein the NaOH solution has a mass percentage of 2% to 20%.

[0008] Optionally, the step of applying coolant to the temporary carrier plate is to spray coolant onto the temporary carrier plate.

[0009] Optionally, the temperature of the coolant is between 0 and 30 degrees Celsius before applying the coolant to the temporary carrier plate.

[0010] Optionally, the step of grinding a portion of the thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer includes: using a coarse grinding process to remove a first thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer; and using a fine grinding process to remove a second thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer.

[0011] Optionally, before performing the enhanced debonding process, the temporary carrier has an initial thickness; the first thickness is 1 / 2 to 2 / 3 of the initial thickness; and the second thickness is 1 / 20 to 1 / 15 of the initial thickness.

[0012] Optionally, both the coarse grinding process and the fine grinding process use grinding wheels. The grinding wheel used in the coarse grinding process has a mesh size of 300 to 500 mesh, and the grinding wheel used in the fine grinding process has a mesh size of 2000 to 6000 mesh.

[0013] Optionally, the step of forming a packaging structure on the side of the metal layer away from the temporary carrier includes: forming a redistribution structure on the side of the metal layer away from the temporary carrier; disposing a chip body on the side of the redistribution structure away from the metal layer, with a conductive connector between the chip body and the redistribution structure; forming an underfill encapsulation layer between the chip body and the redistribution structure to encapsulate the conductive connector; and forming a molding compound encapsulating the underfill encapsulation layer and the chip body on the side of the redistribution structure away from the metal layer.

[0014] Optionally, after the wet etching solution dissolves and removes the first metal region, the wet etching solution comes into contact with the redistribution structure, and the wet etching solution does not chemically react with the redistribution structure.

[0015] The technical solution of this invention has the following technical effects:

[0016] The semiconductor packaging method provided by this invention, when the packaging structure and temporary carrier are not completely debonded by the optical debonding process, determines that there is a first metal region in the metal layer that is in direct contact with a portion of the temporary carrier, and continues to use an enhanced debonding process to debond the packaging structure and the temporary carrier. The enhanced debonding process includes: grinding a portion of the thickness of the temporary carrier from the side of the temporary carrier facing away from the metal layer. This shortens the path of the wet etching solution to the first metal region, and the temperature of the temporary carrier is relatively high during the grinding process. During the grinding of the portion of the temporary carrier, a coolant is applied to the temporary carrier. When the temporary carrier comes into contact with the coolant, which has a large temperature difference, the rapid temperature change causes significant internal thermal stress, leading to internal cracks in the temporary carrier. The external stress on the temporary carrier during the grinding step contributes to the crack formation. A temporary substrate with cracks is placed in a wet etching solution. The wet etching solution penetrates through the cracks inside the temporary substrate to the first metal region and dissolves and removes the first metal region, causing the temporary substrate and the metal layer to lose their bonding force. Consequently, the temporary substrate and the packaging structure lose their bonding force, making it easy to peel off the temporary substrate and the packaging structure, thus completing the debonding of the packaging structure and the temporary substrate. Attached Figure Description

[0017] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a semiconductor packaging method based on existing technology;

[0019] Figure 2 A flowchart of a semiconductor packaging method provided in an embodiment of the present invention;

[0020] Figures 3 to 9 This is a schematic diagram of a semiconductor packaging process provided in an embodiment of the present invention. Detailed Implementation

[0021] As described in the background section, in existing semiconductor packaging methods, there are instances where the packaging structure cannot be successfully debonded from the temporary carrier.

[0022] Through research and observation under an optical microscope, the inventors discovered that even after applying the bonding adhesive layer 4' to the temporary carrier 2', some areas without the bonding adhesive layer still exist, causing the metal layer 3' to be directly sputtered onto a portion of the surface of the temporary carrier 2'. After undergoing the high-temperature heat treatment process of the packaging process, the metal atoms corresponding to this portion of the metal layer 3' move towards and into the temporary carrier 2', resulting in a strong bond between the metal layer 3' and the temporary carrier 2'. During the process of debonding the package structure 1' from the temporary carrier 2' using optical debonding technology, although the bonding adhesive layer 4' loses its adhesiveness, the temporary carrier 2' remains directly bonded to the metal layer 3', preventing the package structure from successfully debonding from the temporary carrier 2', leading to defective chips. The presence of defective chips results in the scrapping of the chip mounted on the temporary carrier 2', increasing the cost of the packaging process. Therefore, it is necessary to solve the problem of the package structure's inability to successfully debond from the temporary carrier.

[0023] Based on this, the present invention provides a semiconductor packaging method that enables the packaging structure to be successfully debonded from a temporary carrier.

[0024] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0026] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can also refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0027] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0028] One embodiment of the present invention provides a semiconductor packaging method, in conjunction with reference to [reference needed]. Figure 1 ,include:

[0029] Step S1: Provide a temporary carrier board;

[0030] Step S2: Form a bonding adhesive layer on one side surface of the temporary carrier plate;

[0031] Step S3: Form a metal layer on the surface of the bonding adhesive layer facing away from the temporary carrier plate;

[0032] Step S4: Form an encapsulation structure on the side of the metal layer opposite to the temporary carrier plate;

[0033] Step S5: After forming the encapsulation structure, the bonding adhesive layer is irradiated with ultraviolet light using an optical debonding process;

[0034] Step S6: When the packaging structure and the temporary carrier are not completely debonded by the optical debonding process, it is determined that there is a first metal region in the metal layer that is in direct contact with part of the temporary carrier. An enhanced debonding process is used to debond the packaging structure and the temporary carrier. The enhanced debonding process includes: grinding a portion of the thickness of the temporary carrier from the side of the temporary carrier away from the metal layer; applying a coolant to the temporary carrier during the grinding process to create cracks inside the temporary carrier; providing a wet etching solution; placing the cracked temporary carrier in the wet etching solution, whereby the wet etching solution penetrates through the cracks to the first metal region and dissolves and removes the first metal region.

[0035] In this embodiment, when the encapsulation structure and the temporary carrier fail to debond through the optical debonding process, it is determined that a first metal region exists in the metal layer that is in direct contact with a portion of the temporary carrier. An enhanced debonding process is then employed to further debond the encapsulation structure and the temporary carrier. The enhanced debonding process includes: grinding a portion of the temporary carrier's thickness from the side of the temporary carrier facing away from the metal layer. This shortens the path of the wet etching solution to the first metal region, and the grinding process on the side of the temporary carrier facing away from the metal layer results in a higher temperature for the temporary carrier. During the grinding process, a coolant is applied to the temporary carrier. When the temporary carrier comes into contact with the coolant, which has a significant temperature difference, the rapid temperature change causes substantial internal thermal stress, leading to internal cracks. The external stress from grinding on the side of the temporary carrier facing away from the metal layer further contributes to crack formation. A temporary substrate with cracks is placed in a wet etching solution. The wet etching solution penetrates through the cracks inside the temporary substrate to the first metal region and dissolves and removes the first metal region, causing the temporary substrate and the metal layer to lose their bonding force. Consequently, the temporary substrate and the packaging structure lose their bonding force, making it easy to peel off the temporary substrate and the packaging structure, thus completing the debonding of the packaging structure and the temporary substrate.

[0036] The following is combined Figures 3 to 9 This section provides a detailed introduction to semiconductor packaging methods.

[0037] refer to Figure 3 A temporary carrier plate 2 is provided; a bonding adhesive layer 4 is formed on one side surface of the temporary carrier plate 2.

[0038] The temporary carrier plate 2 includes a glass carrier plate.

[0039] The step of forming a bonding adhesive layer 4 on one side surface of the temporary carrier plate 2 is as follows: the bonding adhesive layer 4 is applied to one side surface of the temporary carrier plate 2. The material used to apply the bonding adhesive layer 4 is a material that can lose its adhesiveness through an optical debonding process.

[0040] Continue to refer to Figure 3 A metal layer 3 is formed on the surface of the bonding adhesive layer 4 facing away from the temporary carrier plate 2; an encapsulation structure is formed on the side of the metal layer 3 facing away from the temporary carrier plate 2.

[0041] The metal layer 3 has good adhesion to the temporary carrier 2 through the bonding adhesive layer 4, which makes the temporary carrier 2 and the packaging structure stably bonded.

[0042] In some embodiments, the material of the metal layer 3 includes Al.

[0043] The metal layer 3 can be a single-layer structure or a multi-layer structure.

[0044] In one embodiment, the thickness of the metal layer 3 is 0.5 micrometers to 3 micrometers, for example, 0.5 micrometers, 1 micrometer, 2 micrometers, or 3 micrometers. The thickness of the metal layer 3 does not need to be too large, so that the first metal region of the metal layer can be removed more easily in the subsequent enhanced debonding process.

[0045] In one embodiment, the step of forming an encapsulation structure on the side of the metal layer 3 away from the temporary carrier 2 includes: forming a redistribution structure 14 on the side of the metal layer 3 away from the temporary carrier 2; disposing a chip body 5 on the side of the redistribution structure 14 away from the metal layer 3, with a conductive connector between the chip body 5 and the redistribution structure 14; forming an underfill encapsulation layer 132 encapsulating the conductive connector between the chip body 5 and the redistribution structure 14; and forming a molding compound 133 encapsulating the underfill encapsulation layer 132 and the chip body 5 on the side of the redistribution structure 14 away from the metal layer 3.

[0046] The rewiring structure 14 includes a rewiring layer 141 and a dielectric layer 142. The rewiring layer 141 is located in the dielectric layer 142, and multiple layers of the rewiring layer 141 can be provided.

[0047] In one embodiment, before the chip body 5 is disposed on the side of the redistribution structure 14 away from the metal layer 3, the active surface of the chip body 5 is provided with chip-embedded pads, and the active surface of the chip body 5 has a conductive pad 131 and a solder layer 134. The conductive pad 131 is located on the surface of the chip-embedded pads, and the solder layer 134 is located on the surface of the conductive pad 131 away from the chip-embedded pads.

[0048] In one embodiment, the step of forming a package structure on the side of the metal layer 3 opposite to the temporary carrier 2 further includes forming an interconnect pad 135 on a portion of the surface of the redistribution structure 14 opposite to the metal layer 3. In the step of setting the chip body 5 on the side of the redistribution structure 14 opposite to the metal layer 3, a conductive pad 131 is connected to the interconnect pad 135 via a solder layer 134. The chip body 5 is electrically connected to the chip-embedded pads, the conductive pad 131, the solder layer 134, the interconnect pad 135, and the redistribution structure 14.

[0049] refer to Figure 4 After the encapsulation structure is formed, the bonding adhesive layer 4 is irradiated with ultraviolet light using an optical debonding process.

[0050] When the encapsulation structure and the temporary carrier 2 fail to be debonded by the optical debonding process, it is determined that there is a first metal region in the metal layer 3 that is in direct contact with part of the temporary carrier 2, and an enhanced debonding process is used to debond the encapsulation structure and the temporary carrier 2.

[0051] refer to Figure 5 and Figure 6 A portion of the thickness of the temporary carrier plate 2 is ground from the side of the temporary carrier plate 2 facing away from the metal layer 3. During the grinding process, coolant is applied to the temporary carrier plate 2 to induce cracks inside the temporary carrier plate 2 (see reference). Figure 7 ).

[0052] During the grinding process on the side of the temporary carrier plate 2 facing away from the metal layer 3, the temperature of the temporary carrier plate 2 becomes high, for example, exceeding 200 degrees Celsius due to grinding. When a portion of the temporary carrier plate 2 is ground, coolant is applied. When the temporary carrier plate 2 comes into contact with the coolant, which has a large temperature difference, the rapid temperature change causes significant internal thermal stress, leading to internal cracks. Specifically, the internal thermal stress of the temporary carrier plate 2, combined with the external stress during grinding and the weakened strength due to its reduced thickness, causes cracks to extend from the interior of the temporary carrier plate 2 to its surface. The external stress from grinding on the side of the temporary carrier plate facing away from the metal layer further contributes to crack formation.

[0053] In some embodiments, the step of grinding a portion of the thickness of the temporary carrier 2 from the surface of the temporary carrier 2 facing away from the metal layer 3 includes: referencing Figure 5 A coarse grinding process is used to remove a temporary carrier plate of a first thickness from the surface of the temporary carrier plate opposite to the metal layer; (Refer to...) Figure 6 A second-thickness temporary carrier plate is removed from the side of the temporary carrier plate opposite to the metal layer using a fine grinding process. Coolant is applied to the temporary carrier plate 2 during both the coarse and fine grinding processes.

[0054] In some embodiments, both the coarse grinding process and the fine grinding process use grinding wheels. The grinding wheel used in the coarse grinding process has a mesh size of 300 to 500 mesh, and the grinding wheel used in the fine grinding process has a mesh size of 2000 to 6000 mesh.

[0055] The coarse grinding process removes a significant amount of temporary carrier material, increasing the grinding rate. The fine grinding process allows for better control over the grinding endpoint.

[0056] It should be noted that the larger the abrasive grain size of the grinding wheel, the larger the volume of powder obtained from the temporary carrier 2 in a single grinding pass. Larger abrasive grains result in a greater depth of cut, leading to a greater force exerted by the grinding head on the temporary carrier 2. Consequently, the force transmitted from the grinding head to the packaging structure through the temporary carrier 2 is also greater. Especially in the final stage of grinding the temporary carrier 2, its remaining thickness is relatively thin, meaning its mechanical support to the packaging structure is also lower. Therefore, a fine grinding process is used in the final stage of grinding the temporary carrier 2 to avoid introducing significant internal stress into the material of the entire packaging structure by the grinding head, thereby preventing a reduction in the mechanical strength of the packaging structure, avoiding delamination at material interfaces, and increasing reliability.

[0057] In some embodiments, the temporary carrier has an initial thickness prior to the enhanced debonding process; the first thickness is 1 / 2 to 2 / 3 of the initial thickness; and the second thickness is 1 / 20 to 1 / 15 of the initial thickness.

[0058] In some embodiments, the initial thickness is 1000 micrometers to 2000 micrometers, the first thickness is 500 micrometers to 1500 micrometers, and the second thickness is 50 micrometers to 130 micrometers.

[0059] In some embodiments, the coarse grinding process and the fine grinding process together grind a portion of the thickness of the temporary carrier 2 from the surface of the temporary carrier 2 facing away from the metal layer 3, so that the remaining thickness of the temporary carrier 2 is 400 micrometers to 700 micrometers. The remaining thickness of the temporary carrier 2 is not too small, so that the remaining temporary carrier 2 can still provide good support and buffer against external forces for the packaging structure; the remaining thickness of the temporary carrier 2 is not too large, so that the path of subsequent wet etching solution to penetrate into the first metal region through the cracks inside the temporary carrier 2 is small. Secondly, cracks will only occur when the remaining thickness of the temporary carrier 2 is less than 700 micrometers.

[0060] In some embodiments, the step of applying coolant to the temporary carrier plate 2 is: spraying coolant onto the temporary carrier plate 2.

[0061] In some embodiments, the coolant includes cooling water.

[0062] In some embodiments, the parameters for spraying coolant onto the temporary carrier plate 2 include a flow rate of 3L / min to 5L / min, for example, 4L / min.

[0063] Before applying coolant to the temporary carrier plate 2, the temperature of the coolant is between 0 degrees Celsius and 30 degrees Celsius.

[0064] refer to Figure 8A wet etching solution is provided; a temporary carrier plate 2 with cracks is placed in the wet etching solution, and the wet etching solution penetrates through the cracks to the first metal region and dissolves and removes the first metal region.

[0065] In some embodiments, the metal layer 3 is made of Al, and the wet etching solution comprises a NaOH solution. The NaOH solution has a mass percentage of 2% to 20%.

[0066] After the wet etching solution dissolves and removes the first metal region, the wet etching solution comes into contact with the redistribution structure 14, and the wet etching solution does not chemically react with the redistribution structure 14.

[0067] The temporary carrier 2 with cracks is placed in a wet etching solution. The wet etching solution penetrates into the first metal region through the cracks inside the temporary carrier 2 and dissolves and removes the first metal region, causing the temporary carrier 2 and the metal layer 3 to lose their bonding force. Consequently, the temporary carrier 2 and the packaging structure lose their bonding force, making it easy to peel the temporary carrier 2 and the packaging structure apart, thus completing the debonding of the packaging structure and the temporary carrier 2.

[0068] It should be noted that, in another embodiment of the present invention, a chip body 5 is disposed on the side of the redistribution structure 14 away from the metal layer 3. Several chip bodies 5 are arranged to form a chip body array. Several dummy chips 51 are also disposed on the side of the redistribution structure 14 away from the metal layer 3, surrounding the chip body array. The molding compound also encapsulates the dummy chips 51. The overall strength of the dummy chip 51 encapsulation structure reduces the probability of the encapsulation structure cracking during the grinding and thinning process of the temporary carrier board 2. Simultaneously, the molding compound also provides a certain buffering effect, reducing the oscillations received by the temporary carrier board 2 during grinding and further reducing the possibility of cracking of the encapsulation structure.

[0069] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A semiconductor packaging method, characterized in that, include: Provide temporary carrier board; A bonding adhesive layer is formed on one side surface of the temporary carrier plate; A metal layer is formed on the surface of the bonding adhesive layer facing away from the temporary carrier plate; An encapsulation structure is formed on the side of the metal layer opposite to the temporary carrier plate; After the encapsulation structure is formed, the bonding adhesive layer is irradiated with ultraviolet light using an optical debonding process; When the encapsulation structure and the temporary carrier are not completely debonded by the optical debonding process, it is determined that there is a first metal region in the metal layer that is in direct contact with part of the temporary carrier. An enhanced debonding process is then used to debond the encapsulation structure and the temporary carrier. The enhanced debonding process includes: grinding a portion of the thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer; applying a coolant to the temporary carrier plate during the grinding process to induce cracks inside the temporary carrier plate; and providing a wet etching solution. A temporary carrier plate with cracks is placed in the wet etching solution, which penetrates through the cracks to the first metal region and dissolves and removes the first metal region.

2. The semiconductor packaging method according to claim 1, characterized in that, The material of the metal layer includes Al.

3. The semiconductor packaging method according to claim 2, characterized in that, The wet etching solution includes a NaOH solution, wherein the mass percentage of the NaOH solution is 2% to 20%.

4. The semiconductor packaging method according to claim 1, characterized in that, The step of applying coolant to the temporary carrier plate is as follows: spray coolant onto the temporary carrier plate.

5. The semiconductor packaging method according to claim 1 or 4, characterized in that, Before applying coolant to the temporary carrier plate, the temperature of the coolant is between 0 and 30 degrees Celsius.

6. The semiconductor packaging method according to claim 1, characterized in that, The step of grinding a portion of the thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer includes: removing a first thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer using a coarse grinding process; and removing a second thickness of the temporary carrier plate from the side surface of the temporary carrier plate away from the metal layer using a fine grinding process.

7. The semiconductor packaging method according to claim 6, characterized in that, Prior to the enhanced debonding process, the temporary carrier has an initial thickness; the first thickness is 1 / 2 to 2 / 3 of the initial thickness; and the second thickness is 1 / 20 to 1 / 15 of the initial thickness.

8. The semiconductor packaging method according to claim 6, characterized in that, Both the coarse grinding process and the fine grinding process use grinding wheels. The grinding wheel used in the coarse grinding process has a mesh size of 300 to 500 mesh, and the grinding wheel used in the fine grinding process has a mesh size of 2000 to 6000 mesh.

9. The semiconductor packaging method according to claim 1, characterized in that, The step of forming a package structure on the side of the metal layer away from the temporary carrier includes: forming a redistribution structure on the side of the metal layer away from the temporary carrier; disposing a chip body on the side of the redistribution structure away from the metal layer, with a conductive connector between the chip body and the redistribution structure; forming an underfill encapsulation layer between the chip body and the redistribution structure to encapsulate the conductive connector; and forming a molding compound encapsulating the underfill encapsulation layer and the chip body on the side of the redistribution structure away from the metal layer.

10. The semiconductor packaging method according to claim 9, characterized in that, After the wet etching solution dissolves and removes the first metal region, the wet etching solution comes into contact with the redistribution structure, and the wet etching solution does not chemically react with the redistribution structure.

Images