Semiconductor single crystal direct writing apparatus and method

Abstract

The application discloses a semiconductor single crystal direct writing device and method, which comprises a substrate assembly with a direct writing surface, a direct writing assembly movably arranged on one side of the direct writing surface, the direct writing assembly comprising a flexible direct writing part and a liquid storage cavity, the tip of the flexible direct writing part abutting against the direct writing surface, a slit being arranged on the flexible direct writing part and being communicated with the liquid storage cavity, and the slit extending to the tip, and a liquid supply assembly communicated with the liquid storage cavity and used for conveying liquid to the liquid storage cavity, the liquid entering the slit through the liquid storage cavity, the liquid flowing out of the slit having a meniscus, and the meniscus being in contact with the direct writing surface. The liquid supply assembly is arranged to convey liquid to the liquid storage cavity, the liquid entering the slit through the liquid storage cavity, the liquid flowing out of the slit having a meniscus, the stable meniscus improving the order of the crystal orientation, repeated large-area production being realized, and the production cost being reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor single crystal preparation technology, and in particular to a semiconductor single crystal direct writing device and method. Background Technology

[0002] Semiconductor single crystals have advantages such as no grain boundaries and low crystal defect density, which are conducive to carrier transport. Among them, using highly oriented single crystals with long-range order as the active layer of field-effect transistor devices is the key to improving their performance. Therefore, highly oriented single crystal printing technology is an important research direction in the field of semiconductor single crystal manufacturing processes.

[0003] In existing technologies, traditional inorganic single crystal preparation processes typically require equipment that generates high temperatures and vacuum conditions, limiting continuous production capacity. Existing crystal coating processes also have the following technical problems: the generated crystals have poor orientation and order and are difficult to repeat, making it difficult to achieve large-area production. When producing roll-to-roll industrially, it is necessary to control the micron-level gap, the equipment is easily damaged, and the compatibility with irregular substrates is poor, resulting in high production costs. Summary of the Invention

[0004] In view of this, this application provides a semiconductor single crystal direct writing device and method to solve the problems of poor orientation and order of the generated crystals in the existing crystal coating process, which are difficult to repeat and difficult to achieve large-area production, resulting in high production costs.

[0005] This application proposes a semiconductor single-crystal direct-write device, comprising:

[0006] The substrate assembly has a direct writing surface;

[0007] A direct writing component is movably disposed on one side of the direct writing surface. The direct writing component includes a flexible direct writing part and a liquid storage cavity. The tip of the flexible direct writing part abuts against the direct writing surface. A slit communicating with the liquid storage cavity is provided on the flexible direct writing part, and the slit extends to the tip.

[0008] A liquid supply assembly is connected to the liquid storage chamber and is used to supply liquid to the liquid storage chamber. The liquid enters the slit through the liquid storage chamber and flows out of the slit. The liquid has a meniscus and the meniscus is in contact with the straight writing surface.

[0009] Optionally, multiple tips are provided, and the multiple tips are arranged in parallel.

[0010] Optionally, the slit is configured as a symmetrical structure at the tip.

[0011] Optionally, the slit is configured with an asymmetric structure at the tip.

[0012] Optionally, the direct writing assembly includes a sealing sheet, the liquid storage chamber is disposed on the sealing sheet, and the sealing sheet is provided with a first liquid supply hole, which communicates with the liquid storage chamber.

[0013] Optionally, the direct writing component includes a first liquid supply needle disposed in the first liquid supply hole, one end of the first liquid supply needle being connected to the liquid supply component, and the other end of the first liquid supply needle being connected to the liquid storage chamber.

[0014] Optionally, the direct writing assembly includes a first sealing plate and a second sealing plate, with the sealing sheet and the flexible direct writing portion both located between the first sealing plate and the second sealing plate.

[0015] Optionally, the substrate assembly includes a first substrate and a first heating plate, the first substrate being located above the first heating plate, and the direct writing surface being disposed on the first substrate on the side facing the direct writing assembly.

[0016] Optionally, the semiconductor single-crystal direct writing device includes a displacement platform disposed below the substrate assembly for moving the substrate assembly.

[0017] Optionally, the semiconductor single-crystal direct writing device includes a displacement platform disposed below the substrate assembly for moving the substrate assembly.

[0018] This application also proposes a direct writing method for semiconductor single crystals, including:

[0019] Liquid is injected into the liquid supply assembly and delivered to the liquid storage chamber of the direct writing assembly;

[0020] The liquid storage chamber delivers the liquid to the slit, and the liquid is delivered through the slit to the substrate assembly to form a meniscus.

[0021] The substrate assembly is heated at a constant temperature and moved at a uniform speed so that the evaporation rate of the liquid matches the moving speed of the substrate assembly.

[0022] The movement of the substrate assembly is controlled so that the direct-write assembly continuously fabricates semiconductor single-crystal products.

[0023] The beneficial effects of this application are as follows: Firstly, unlike existing technologies, this application provides a slit connected to the liquid storage chamber on the flexible direct-writing section. Liquid flows out from the slit to the substrate assembly, enabling liquid supply and avoiding the problem of uneven film caused by liquid reduction during the coating process, thus greatly enhancing continuous production capability. Secondly, by providing a flexible direct-writing section, this application can adapt to irregularly shaped direct-writing surfaces. When the shape of the direct-writing surface changes, the tip of the flexible direct-writing section deforms to achieve self-adaptation, greatly improving the conformal capability of the device and enabling compatibility with industrial roll-to-roll continuous production, reducing the complexity of device use. Thirdly, by having the tip of the flexible direct-writing section abut against the direct-writing surface, this application prevents damage to the direct-writing surface during substrate assembly movement, reducing the difficulty of using the device and improving robustness. Furthermore, this application can control the width of the slit and the moving speed of the substrate assembly, thereby controlling the flow rate of the meniscus and ensuring its stability.

[0024] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this application. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of an embodiment of the semiconductor single-crystal direct-write device of this application;

[0027] Figure 2 This is a schematic diagram of a structural embodiment of the present application;

[0028] Figure 3 This is an exploded view of an embodiment of the direct-write component of this application;

[0029] Figure 4 This is an exploded view of an embodiment of the multi-channel write-through component of this application;

[0030] Figure 5 This is an assembly diagram of another embodiment of the multi-channel write-through component of this application;

[0031] Figure 6 This is an exploded view of another embodiment of the multi-channel write-through component of this application;

[0032] Figure 7 This is a flowchart of an embodiment of the semiconductor single-crystal direct writing method of this application;

[0033] Figure 8yes Figure 2 Cutting-edge physical renderings;

[0034] Figure 9 yes Figure 5 Cutting-edge physical renderings;

[0035] Figure 10 It is a rendering of a symmetrically pointed object;

[0036] Figure 11 yes Figure 10 A photograph of actual equipment used in the production of single crystals;

[0037] Figure 12 It is a physical rendering of an asymmetrical tip;

[0038] Figure 13 yes Figure 12 A photograph of actual equipment used in the production of single crystals;

[0039] Figure 14 yes Figure 5 A rendering of a multi-pointed, high-precision product;

[0040] Figure 15 yes Figure 14 A photograph of actual equipment used in the production of single crystals;

[0041] Figure 16 yes Figure 4 A rendering of a multi-pointed, high-precision product;

[0042] Figure 17 yes Figure 16 A photograph of actual equipment used in the production of single crystals;

[0043] Figure 18 This is a schematic diagram of the structure of an OFET device manufactured using a semiconductor single-crystal direct-write device;

[0044] Figure 19 This is a graph showing the output characteristics of OFET devices produced by a semiconductor single-crystal direct-write device.

[0045] Figure 20 This is a graph showing the transfer characteristics of OFET devices produced using a semiconductor single-crystal direct-write device.

[0046] In the figures, the following reference numerals are used: 10, substrate assembly; 20, direct writing assembly; 21, flexible direct writing section; 22, tip; 23, slit; 24, meniscus; 25, liquid storage chamber; 26, first handle; 31, sealing plate; 33, first liquid supply needle; 34, first sealing plate; 35, second sealing plate; 36, first through hole; 37, second through hole; 38, third through hole; 39, fourth through hole; 40, liquid supply assembly; 42, liquid supply support platform; 43, first liquid supply tube. Detailed Implementation

[0047] To enable those skilled in the art to better understand the technical solutions of this application, the semiconductor single-crystal direct-writing apparatus and method provided in this application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It is understood that the described embodiments are merely some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0048] The terms "first," "second," etc., used in this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0049] Based on the background technology, since traditional inorganic single crystal preparation processes usually require equipment that generates high temperature and vacuum conditions and have limited continuous production capacity, this application uses the solution method. The solution method involves coating an organic semiconductor solution onto a specific substrate to form a wet film, and then changing the external conditions to make the solution supersaturated and thus precipitate single crystals. Since the solution method can be carried out in a normal temperature air environment and can produce high-quality single crystals, it is compatible with industrial roll-to-roll production conditions and has broad development prospects.

[0050] Traditional solution-based film-forming technologies include droplet deposition and meniscus-guided coating.

[0051] Droplet deposition methods mainly include inkjet printing, spraying technology, and droplet casting. Inkjet printing and spraying technologies, due to complex hydrodynamic phenomena such as bubble trapping and the coffee ring effect during the droplet impact on the substrate and drying process, struggle to produce regularly oriented crystals and are therefore unsuitable for single-crystal preparation. Droplet casting can produce high-quality single crystals, but the crystal area produced is limited by the size of the attached droplet, and the crystal growth direction is uncontrollable, resulting in poor repeatability and incompatibility with industrial production. Although droplet deposition is simple in process and consumes fewer raw materials, its poor ability to produce single crystals and the high density of grain boundaries and defects in the resulting organic semiconductor thin films hinder its widespread application in the field of organic field-effect transistors.

[0052] Meniscus-guided coating boasts advantages such as strong single-crystal production capacity, continuous production capability, high repeatability, and compatibility with roll-to-roll industrial production modes, making it the most promising method for achieving low-cost, large-area single-crystal production. Meniscus-guided coating methods include blade coating, slot coating, dip coating, brush coating, and direct writing. Blade coating is a low-cost and simple coating process; however, the need to maintain a micron-level gap between the blade and the substrate limits its application on irregularly shaped substrates. Furthermore, since the film thickness is related to this gap, precise Z-axis control is required to obtain a uniform film, raising the barrier to entry. Additionally, the material is pre-placed on the substrate during blade coating, and as the coating progresses, the material diminishes, leading to uneven film thickness. This liquid-free production method also limits the continuity of blade coating production. While slot coating allows for active liquid supply, it also suffers from the drawbacks of requiring gap control and poor conformal capability. Dip coating is a simple method for obtaining large-area single crystals, but it requires a large amount of organic semiconductor solution as a liquid pool, and the coating area is limited by the depth of the liquid pool, hindering its widespread application. The direct-write method of this application, however, uses a pen-like structure to deposit organic semiconductor solution onto a substrate, offering advantages such as flexibility, patternability, strong conformal capability, and continuous liquid supply. However, the small area deposited per pass limits its production efficiency. Therefore, a large-area, conformal, and stable continuous production meniscus-guided coating process still needs further research and development.

[0053] To obtain highly oriented single crystals, a controllable single crystal deposition process has been developed based on traditional coating film-forming techniques. Specific techniques include substrate polar patterning, enhanced flow field to increase shear rate, and stamp-based single crystal growth. Substrate polar patterning constrains the crystal growth direction, forming single crystals with consistent alignment. However, this method introduces a substrate treatment step, and the polar patterns are typically on the micrometer scale, requiring photolithography, which increases process complexity and production costs. Flow field control involves setting microstructures on a doctor blade to control the shear rate and flow rate, thereby promoting regular solute arrangement and achieving highly oriented crystal deposition. However, the doctor blade's microstructures are typically on the micrometer scale, requiring photolithography. This increases both process cost and technical difficulty; furthermore, silicon-based microstructure doctor blades are inherently brittle and prone to breakage during production. The stamping method uses a photolithography-formed stamp to transfer / imprint single crystals. However, the stamps are typically made of PDMS material, which is prone to deformation at high temperatures, reducing the accuracy of the transfer / imprint. This makes it unsuitable for applications requiring high-temperature assisted crystallization. Furthermore, the introduction of photolithography increases processing costs. Additionally, the production area is limited by the stamp area, resulting in poor production continuity.

[0054] To prepare highly oriented organic semiconductor single crystals, a stable and controllable meniscus is required. This application provides a semiconductor single crystal direct writing apparatus and method, which can control the flow rate of the meniscus by controlling the slit width on the flexible direct writing section and the moving speed of the substrate assembly, thereby ensuring the stability of the meniscus. This solves the problem of poor orientation and order of crystals generated by crystal coating processes, which are difficult to repeat and make it difficult to achieve large-area production, resulting in high production costs.

[0055] Please see Figures 1 to 20 , Figure 1 This is a schematic diagram of the structure of an embodiment of the semiconductor single-crystal direct-write device of this application; Figure 2 This is a schematic diagram of a structural embodiment of the present application; Figure 3 This is an exploded view of an embodiment of the direct-write component of this application; Figure 4 This is an exploded view of an embodiment of the multi-channel write-through component of this application; Figure 5 This is an assembly diagram of another embodiment of the multi-channel write-through component of this application; Figure 6 This is an exploded view of another embodiment of the multi-channel write-through component of this application; Figure 7 This is a flowchart of an embodiment of the semiconductor single-crystal direct writing method of this application; Figure 8 yes Figure 2 Cutting-edge physical renderings; Figure 9 yes Figure 5 Cutting-edge physical renderings; Figure 10 It is a rendering of a symmetrically pointed object; Figure 11 yes Figure 10 A photograph of actual equipment used in the production of single crystals; Figure 12 It is a physical rendering of an asymmetrical tip; Figure 13 yes Figure 12 A photograph of actual equipment used in the production of single crystals; Figure 14 yes Figure 5 A rendering of a multi-pointed, high-precision product; Figure 15 yes Figure 14 A photograph of actual equipment used in the production of single crystals; Figure 16 yes Figure 4 A rendering of a multi-pointed, high-precision product; Figure 17 yes Figure 16 A photograph of actual equipment used in the production of single crystals; Figure 18 This is a schematic diagram of the structure of an OFET device manufactured using a semiconductor single-crystal direct-write device; Figure 19 This is a graph showing the output characteristics of OFET devices produced by a semiconductor single-crystal direct-write device. Figure 20 This is a graph showing the transfer characteristics of OFET devices produced using a semiconductor single-crystal direct-write device.

[0056] In one embodiment, such as Figures 1 to 3As shown, the semiconductor single-crystal direct writing device may include a substrate assembly 10, a direct writing assembly 20, and a liquid supply assembly 40. The substrate assembly 10 has a direct writing surface. The direct writing assembly 20 is movably disposed above the substrate assembly 10, allowing relative movement between the direct writing assembly 20 and the substrate assembly 10. The direct writing assembly 20 may include a flexible direct writing section 21 and a liquid storage cavity 25. The tip 22 of the flexible direct writing section 21 may abut against the direct writing surface. The flexible direct writing section 21 may have a slit 23 communicating with the liquid storage cavity 25, and the slit 23 may extend to the tip 22. The liquid supply assembly 40 is communicating with the liquid storage cavity 25 and is used to supply liquid to the liquid storage cavity 25. The liquid can enter the slit 23 through the liquid storage cavity 25, and the liquid flowing out through the slit 23 has a meniscus 24, which contacts the direct writing surface.

[0057] In the embodiments of this application, the liquid supply component 40 is connected to the liquid storage chamber 25 to supply liquid to the liquid storage chamber 25. The liquid enters the slit 23 of the flexible direct writing section 21 through the liquid storage chamber 25 and flows out from the slit 23 to the substrate assembly 10. By moving the direct writing component 20 relative to the substrate assembly 10, the slit 23 and the substrate assembly 10 move relative to each other. The liquid flowing out from the slit 23 is printed on the substrate assembly 10 at a stable flow rate, forming a meniscus 24 between the liquid and the substrate assembly 10, increasing the stability of the meniscus 24 and improving production quality. Secondly, this application sets the tip 22 of the flexible direct writing section 21 to abut against the substrate assembly 10, so that the liquid flows to the substrate assembly 10 through the slit 23. The tip 22 of the flexible direct writing section 21 deforms to achieve self-adaptation to the substrate assembly 10, greatly improving the conformal capability of the device and enabling it to be compatible with industrial roll-to-roll continuous production. This invention reduces the complexity of device use. Furthermore, the flexible direct-write section 21 can adapt to irregularly shaped substrate assemblies 10. When the shape of the substrate assembly 10 changes, the flexible direct-write section 21 can adapt well to the substrate assembly 10, and will not damage the substrate assembly 10 during movement, thus reducing the difficulty of device use and improving robustness. In addition, by providing a slit 23 on the flexible direct-write section 21 that communicates with the liquid storage chamber 25, liquid flows from the slit 23 to the substrate assembly 10, enabling liquid supply and avoiding the problem of uneven film caused by liquid reduction during the coating process, greatly enhancing continuous production capacity. This invention can also control the width of the slit 23 and the moving speed of the substrate assembly 10, thereby controlling the flow rate of the meniscus 24 and ensuring the stability of the meniscus 24.

[0058] Optionally, a contact line is provided on the writing surface, and the tip 22 of the flexible writing section 21 abuts against the contact line on the writing surface. The displacement platform generates relative movement between the writing surface and the meniscus 24, and the liquid is dragged out by viscous force. The temperature of the writing surface and the moving speed of the writing surface jointly control the moving speed of the contact line. When the moving speed of the contact line matches the crystallization speed, a long-range ordered highly oriented single crystal can be generated.

[0059] Optionally, the slit 23 can be configured as a straight line, wider at the top and narrower at the bottom, so that when the liquid flows to the end of the tip 22, it forms an accelerated flow field, promoting the regular arrangement of the solute. Specifically, the wider portion above the slit 23 can be set to a width range of 70-90 μm, and the narrower portion below the slit 23 can be set to a width range of 25-35 μm. Specifically, the wider portion above the slit 23 can be set to a width range of 80 μm, and the narrower portion below the slit 23 can be set to a width range of 30 μm.

[0060] In some embodiments, such as Figure 10 As shown, the slit 23 can be configured as a symmetrical structure on the tip 22. For example, the slit 23 can be positioned at the exact center of the tip 22 and configured as a straight line. The symmetrically configured straight tip 22 can form a symmetrical meniscus 24, thereby producing a symmetrical crystal (such as...). Figure 11 As shown, this allows for the control of crystal morphology. Optionally, the slit 23 can also be formed into other symmetrical shapes at the tip 22 as needed, such as: the upper and lower parts can be set as straight lines, and the middle part can extend to both sides as symmetrical arcs or squares, eventually converging into the lower straight line. The slit 23 can also be set into shapes at the tip 22 as needed, all of which are within the scope of this application and will not be elaborated here.

[0061] In some embodiments, the slit 23 may also be configured with an asymmetric structure at the tip 22, such as... Figure 12 As shown, it is possible to form asymmetric menisci 24, thereby producing asymmetric crystals (such as...). Figure 13 As shown, the radii of the two sides of the meniscus 24 (R2 is greater than R1) control the symmetry of the generated crystal, thereby controlling the morphology (symmetry) of the meniscus 24 and thus controlling the crystal morphology.

[0062] In some embodiments, the tip 22 may be configured as a single point, such as... Figures 1 to 3 As shown, a single-channel direct-write semiconductor single-crystal direct-write device is formed, which can be used for fine single-crystal patterning.

[0063] Optionally, multiple tips 22 may be provided, such as Figures 4 to 6As shown, correspondingly, multiple slits 23 are also provided on the tip 22. Multiple tips 22 can be arranged in parallel to form a multi-channel direct-write semiconductor single-crystal direct-write device. This device is used for efficient fabrication of repetitive single-crystal patterns. It can achieve a parallel mode for multiple slits 23, enabling multi-channel parallel operation and simultaneous large-area coating, thus improving production efficiency. It can meet the needs of large-area production and fine patterning, simultaneously satisfying the requirements of single-crystal patterning, efficient fabrication of repetitive single-crystal patterns, and large-area single-crystal fabrication (such as...). Figure 14 and Figure 15 As shown, Figure 15 (The arrow indicates the direction of substrate assembly movement), which greatly enhances continuous production capabilities and facilitates the production of large-area highly oriented single crystals (such as...). Figure 16 and Figure 17 As shown, Figure 16 The arrow indicates the direction of movement of the substrate assembly.

[0064] Among them, the semiconductor single crystal direct writing device reduces equipment costs and process complexity. The semiconductor single crystal direct writing device of this application does not require complex and expensive processes such as photolithography, and the cost can be reduced to less than 10 yuan, which greatly reduces the production cost of semiconductor single crystals.

[0065] In some embodiments, the direct writing assembly 20 may include a sealing sheet 31, a liquid storage chamber 25 may be disposed on the sealing sheet 31, and a first liquid supply hole may be provided on the sealing sheet 31. The first liquid supply hole may be connected to the liquid storage chamber 25, and liquid may be supplied to the liquid storage chamber 25 through the first liquid supply hole. The first liquid supply hole may be configured as a liquid supply micro-hole to meet the precision requirements of the semiconductor single crystal direct writing device.

[0066] The direct-write assembly 20 may include a first liquid supply needle 33, which can be disposed within a first liquid supply orifice. One end of the first liquid supply needle 33 can be connected to the liquid supply assembly 40, and the other end can be connected to the liquid storage chamber 25. Liquid output from the liquid supply assembly 40 is input into the liquid storage chamber 25 through the first liquid supply needle 33. When blockage or aging occurs, the first liquid supply needle 33 can be directly replaced, which can protect the first liquid supply orifice and thus protect the sealing sheet 31. Specifically, the first liquid supply needle 33 can be configured as a liquid supply microneedle to meet the precision requirements of the semiconductor single-crystal direct-write device.

[0067] Optionally, the flexible writing section 21 can be tightly connected to the sealing sheet 31 to allow liquid in the reservoir 25 to enter the slit 23. The height of the slit 23 extending from the flexible writing section 21 should be within the height range of the reservoir 25 to facilitate the entry of liquid in the reservoir 25 into the slit 23.

[0068] The direct writing assembly 20 may include a first sealing plate 34 and a second sealing plate 35. The sealing sheet 31 and the flexible direct writing part 21 may be located between the first sealing plate 34 and the second sealing plate 35. The first sealing plate 34 and the second sealing plate 35 are used to seal the sealing sheet 31 and the flexible direct writing part 21 so that the liquid in the liquid storage chamber 25 and the liquid flowing into the slit 23 will not overflow.

[0069] In some embodiments, a first through hole 36 may be provided below the first sealing plate 34, the writing plate, the sealing plate 31, and the second sealing plate 35. A bolt may be provided in the first through hole 36, and the bolt is connected to the first through hole 36 to ensure a stable connection between the first sealing plate 34, the writing plate, the sealing plate 31, and the second sealing plate 35. Two first through holes 36 may be provided, located at opposite ends below the first sealing plate 34, the writing plate, the sealing plate 31, and the second sealing plate 35, respectively.

[0070] In some embodiments, the direct writing assembly 20 may include a first handle 26, which may be located at one end away from the slit 23. A second through hole 37 may be provided below the first handle 26, and a third through hole 38 may be provided above the first sealing plate 34, the direct writing sheet, the sealing sheet 31, and the second sealing plate 35. The second through hole 37 and the third through hole 38 may be connected by bolts. The bolts are connected within the second through hole 37 and the third through hole 38 to ensure a stable connection between the first handle 26, the first sealing plate 34, the direct writing sheet, the sealing sheet 31, and the second sealing plate 35. Two second through holes 37 and two third through holes 38 may be provided, located at the two ends below the first handle 26 and the two ends above the first sealing plate 34, the direct writing sheet, the sealing sheet 31, and the second sealing plate 35, respectively. The first handle 26 can be used to hold the semiconductor single-crystal direct writing device, and a fourth through hole 39 may be provided above the first handle 26 for fixing the semiconductor single-crystal direct writing device.

[0071] In some embodiments, the semiconductor single-crystal direct-write apparatus may include a displacement platform, which may be disposed below the substrate assembly 10 and used to move the substrate assembly 10 to achieve relative movement between the direct-write assembly 20 and the substrate assembly 10. The displacement platform may be configured as a servo displacement platform, capable of moving the substrate assembly 10.

[0072] In some embodiments, the substrate assembly 10 may include a first substrate and a first heating plate. The first substrate may be located above the first heating plate. The first substrate and the first heating plate are placed together on a servo displacement platform, and the direct writing surface is disposed on the side of the first substrate facing the direct writing assembly 20. The first heating plate can heat the first substrate to control the evaporation rate at the meniscus 24 and the contact line. The first substrate is in contact with the flexible direct writing portion 21 to prepare a semiconductor crystal on the first substrate.

[0073] In some embodiments, a first supply tube 43 may be connected between the liquid supply assembly 40 and the first supply needle 33. The first supply tube 43 may be configured as a Teflon tube. The first supply tube 43 transmits the liquid from the liquid supply assembly 40 to the first supply needle 33, and the first supply needle 33 then delivers the liquid to the liquid storage chamber 25.

[0074] In some embodiments, the liquid supply assembly 40 may include a first liquid supply pump and a liquid supply support platform 42. The first liquid supply pump may be located on the liquid supply support platform 42, and the first liquid supply pump provides liquid to the first liquid supply pipe 43. The first liquid supply pump may be connected to the first liquid supply pipe 43.

[0075] Optionally, the first liquid supply pump can be configured as an automatic liquid supply pump. A syringe can be installed on the first liquid supply pump, connected to the first liquid supply tube 43. The liquid supply speed can be precisely set, and the liquid supply assembly 40 delivers the liquid from the syringe through a Teflon tube and the first liquid supply needle 33 to the liquid storage chamber 25 of the direct writing assembly 20. The direct writing assembly 20 then delivers the liquid from the liquid storage chamber 25 to the first substrate through the slit 23 of the flexible direct writing section 21, so that the liquid flow rate output from the slit 23 of the flexible direct writing section 21 matches the moving speed of the substrate assembly 10, forming a stable meniscus 24.

[0076] Understandably, after a stable meniscus 24 is formed on the first substrate by the direct writing component 20, the first substrate begins to move. The liquid supply flow rate in the flexible direct writing section 21 satisfies the liquid supply theory of the slit 23, i.e., Q≈8 / π. 3 Ub 2 The coating film thickness satisfies h = 8 / π 3 The liquid flow rate is only related to the substrate speed U and the gap width b, and the coating liquid film thickness is only related to the gap width b. The flow rate and film thickness can be controlled by adjusting U and b, and the liquid viscosity will not have an effect. The semiconductor single crystal direct writing device of this application has strong universality. Even if a liquid with different viscosity is used, the flow rate and film thickness rules are still met.

[0077] The semiconductor single-crystal direct-write device of this application can fabricate OFET devices (Organic Field-Effect Transistors) using advanced processes. The OFET device structure is as follows: Figure 18 As shown, using pentacene (TIPS-PEN) single crystal as the organic semiconductor layer, the maximum carrier mobility of the OFET device can reach 0.60 cm⁻¹. 2 V -1 s -1 The output characteristic curves and transfer characteristic curves of typical devices are as follows: Figure 19 and Figure 20 As shown.

[0078] Please see Figure 7 , Figure 7 This is a flowchart of an embodiment of the semiconductor single-crystal direct writing method of this application; this application also proposes a semiconductor single-crystal direct writing method, which includes:

[0079] Step S100: Inject liquid into the liquid supply assembly 40 and deliver the liquid to the liquid storage chamber 25 of the direct writing assembly 20;

[0080] Step S200: The liquid storage chamber 25 delivers the liquid to the slit 23, and the liquid is delivered through the slit 23 to the substrate assembly 10 to form the meniscus 24;

[0081] Step S300: Heat the substrate assembly 10 at a constant temperature and move it at a uniform speed so that the evaporation rate of the liquid matches the moving speed of the substrate assembly 10.

[0082] Step S400: Control the movement of the substrate assembly 10 so that the direct writing assembly 20 continuously prepares semiconductor single crystal products.

[0083] Understandably, liquid is injected into the liquid supply component 40 and transported to the liquid storage chamber 25 of the direct writing component 20. The liquid storage chamber 25 then transports the liquid to the slit 23, through which the liquid is transported to the substrate component 10 to form the meniscus 24. By adjusting the speed and temperature of the substrate component 10, the contact line movement speed of the substrate component 10 is matched with the crystallization speed. By controlling the unidirectional movement of the substrate component 10, long-range ordered highly oriented single crystals can be obtained. This also meets the requirements for generating ordered single crystals, preparing large-area single crystals, and adapting to irregularly shaped substrates. The flexible direct writing section 21 can directly contact the substrate component 10, avoiding the need for micron-level gap control between the direct writing component 20 and the substrate component 10, thus improving operational convenience and stability. The flexible direct writing section 21 can also adapt to irregularly shaped substrates, improving the conformal capability of the device. In addition, the cost of a set of experimental equipment is less than 10 yuan, greatly reducing production costs. This application can operate in both multi-parallel mode and large-area brush coating mode, producing large-area, long-range ordered, highly oriented single crystals with strong conformability, low cost, and high production efficiency, which helps to improve the production efficiency of semiconductor single crystals.

[0084] This application places a direct-write assembly 20 above a substrate assembly 10, and allows the direct-write assembly 20 to move relative to the substrate assembly 10. The direct-write assembly 20 includes a flexible direct-write section 21 and a liquid storage cavity 25, with the tip 22 of the flexible direct-write section 21 abutting against the substrate assembly 10. A slit 23 communicating with the liquid storage cavity 25 is provided on the flexible direct-write section 21. A liquid supply assembly 40 is provided communicating with the liquid storage cavity 25 and is used to supply liquid to the liquid storage cavity 25. When the direct-write assembly 20 moves relative to the substrate assembly 10, the liquid enters the slit 23 through the liquid storage cavity 25 and flows out from the slit 23 to the substrate assembly 10, forming a stable meniscus 24 between the direct-write assembly 20 and the substrate assembly 10. This avoids the trouble of controlling the micron-level gap between the squeegee and the substrate in the existing coating process, reduces the difficulty of using the equipment, and improves robustness. The slit 23 can supply liquid, avoiding the problem of uneven film caused by the reduction of solution during the coating process, and greatly enhancing continuous production capability. Secondly, by asymmetrically setting the slits 23 on the tip 22, an asymmetric meniscus 24 can be formed, thereby producing an asymmetric crystal. By controlling the symmetry of the generated crystal, the morphology of the meniscus 24 can be controlled, thus controlling the crystal morphology. By setting up a multi-channel direct-write semiconductor single-crystal direct-write device, repetitive single-crystal patterns can be efficiently prepared. Multiple slits 23 can be used in parallel mode, enabling multi-channel parallel operation and large-area brushing, thus meeting the needs of large-area production and fine patterning. Furthermore, by setting up a displacement platform to move the substrate assembly 10, relative movement between the direct-write component 20 and the substrate assembly 10 can be achieved.

[0085] It should be noted that the various optional implementation methods described in the embodiments of this application can be combined with each other or implemented individually, and the embodiments of this application do not limit this.

[0086] In the description of this application, it should be understood that the terms "upper," "lower," "left," and "right," etc., indicating orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or a specific orientational structure and operation. Therefore, they should not be construed as limitations on this application. Furthermore, "first" and "second" are only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "multiple" means two or more.

[0087] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0088] The above embodiments are described with reference to the accompanying drawings. Other different forms and embodiments are also feasible without departing from the principles of this application, and therefore this application should not be construed as limiting the embodiments set forth herein. Rather, these embodiments are provided to make this application complete and perfect, and to convey the scope of this application to those skilled in the art. In the drawings, component dimensions and relative dimensions may be exaggerated for clarity. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. The terms “comprising” and / or “including”, when used in this specification, indicate the presence of said features, integers, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, elements, components, and / or groups thereof. Unless otherwise shown, numerical ranges, when stated, include the upper and lower limits of the range and any subranges therebetween.

[0089] The above description is only a part of the embodiments of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or direct or indirect application in other related technical fields, are similarly included in the patent protection scope of this application.

Claims

1. A semiconductor single-crystal direct-write device, characterized in that, include: The substrate assembly has a direct writing surface; A direct writing component is movably disposed on one side of the direct writing surface. The direct writing component includes a flexible direct writing part and a liquid storage cavity. The tip of the flexible direct writing part abuts against the direct writing surface. A slit communicating with the liquid storage cavity is provided on the flexible direct writing part, and the slit extends to the tip. A liquid supply assembly is connected to the liquid storage chamber and is used to supply liquid to the liquid storage chamber. The liquid enters the slit through the liquid storage chamber and flows out of the slit. The liquid has a meniscus and the meniscus is in contact with the straight writing surface.

2. The semiconductor single-crystal direct-write device according to claim 1, characterized in that, The tip is provided in multiple ways, and the multiple tips are arranged in parallel.

3. The semiconductor single-crystal direct-write device according to claim 1, characterized in that, The slit is configured as a symmetrical structure at its tip.

4. The semiconductor single-crystal direct-write device according to claim 1, characterized in that, The direct writing assembly includes a sealing sheet, the liquid storage chamber is disposed on the sealing sheet, and the sealing sheet is provided with a first liquid supply hole, which is connected to the liquid storage chamber.

5. The semiconductor single-crystal direct-write device according to claim 4, characterized in that, The direct writing component includes a first liquid supply needle, which is disposed in the first liquid supply hole. One end of the first liquid supply needle is connected to the liquid supply component, and the other end of the first liquid supply needle is connected to the liquid storage chamber.

6. The semiconductor single-crystal direct-write apparatus according to claim 4, characterized in that, The direct writing assembly includes a first sealing plate and a second sealing plate, with the sealing sheet and the flexible direct writing portion both located between the first sealing plate and the second sealing plate.

7. The semiconductor single-crystal direct-write device according to claim 2, characterized in that, The substrate assembly includes a first substrate and a first heating plate, the first substrate being located above the first heating plate, and the direct writing surface being disposed on the first substrate on the side facing the direct writing assembly.

8. The semiconductor single-crystal direct-write device according to claim 2, characterized in that, The semiconductor single-crystal direct writing device includes a displacement platform disposed below the substrate assembly for moving the substrate assembly.

9. The semiconductor single-crystal direct-write device according to claim 5, characterized in that, The liquid supply assembly includes a first liquid supply pump and a liquid supply support platform. The first liquid supply pump is located on the liquid supply support platform and can be connected to the first liquid supply needle.

10. A method for direct writing of a semiconductor single crystal based on the semiconductor single crystal direct writing apparatus according to any one of claims 1-9, characterized in that, The method includes: Liquid is injected into the liquid supply assembly and delivered to the liquid storage chamber of the direct writing assembly; The liquid storage chamber delivers the liquid to the slit, and the liquid is delivered through the slit to the substrate assembly to form a meniscus. The substrate assembly is heated at a constant temperature and moved at a uniform speed so that the evaporation rate of the liquid matches the moving speed of the substrate assembly. The movement of the substrate assembly is controlled so that the direct-write assembly continuously fabricates semiconductor single-crystal products.

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