High frequency module and communication device

Abstract

An improvement in isolation is achieved. In a high-frequency module (100), a first electronic component (1) and a second electronic component (2) are mounted to a main surface (91) of a mounting substrate (9). A resin layer (5) covers at least an outer peripheral surface (14) of the first electronic component (1) and an outer peripheral surface (24) of the second electronic component (2). A conductive layer (6) covers the resin layer (5) and overlaps the first electronic component (1) and the second electronic component (2) when viewed from a thickness direction (D1) of the mounting substrate (9). The conductive layer (6) includes a first conductive portion (61) and a second conductive portion (62). The first conductive portion (61) is located between a first RF terminal (11) of the first electronic component (1) and a second RF terminal (21) of the second electronic component (2) when viewed from the thickness direction (D1). The second conductive portion (62) is adjacent to the first conductive portion (61) when viewed from the thickness direction (D1). The first conductive portion (61) has a higher resistivity than the second conductive portion (62).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module having electronic components and a communication device having the high-frequency module. Background Technology

[0002] Patent document 1 discloses a module (high frequency module) comprising a module substrate (mounting substrate), a duplexer (electronic component) mounted on the mounting surface of the module substrate, a resin layer and a metal film (conductive layer).

[0003] In the module disclosed in Patent Document 1, a resin layer is disposed on the mounting surface of the mounting substrate in such a way that it covers the side of the electronic component. A metal film is formed on the upper surface of the electronic component and the upper surface of the resin layer.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: International Publication No. 2014 / 013831 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] In high-frequency modules, the isolation between a first RF terminal (e.g., an input terminal) of one electronic component (the first electronic component) and a second RF terminal (e.g., an output terminal) of another electronic component (the second electronic component) can sometimes decrease. Additionally, in high-frequency modules, the isolation between a first RF terminal (e.g., an input terminal) and a second RF terminal (e.g., an output terminal) of one electronic component can sometimes decrease.

[0009] The purpose of this invention is to provide a high-frequency module and communication device that can improve isolation.

[0010] Solution for solving the problem

[0011] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a first electronic component, a second electronic component, a resin layer, and a conductive layer. The mounting substrate has a main surface. The first electronic component has a plurality of first external terminals, each including a first RF terminal. The first electronic component is mounted to the main surface of the mounting substrate via the plurality of first external terminals. The second electronic component has a plurality of second external terminals, each including a second RF terminal. The second electronic component is mounted to the main surface of the mounting substrate via the plurality of second external terminals. The resin layer is disposed on the main surface of the mounting substrate, at least covering the outer peripheral surfaces of the first and second electronic components. The conductive layer covers the resin layer and overlaps with both the first and second electronic components when viewed from the thickness direction of the mounting substrate. The conductive layer includes a first conductive portion and a second conductive portion. When viewed from the thickness direction of the mounting substrate, the first conductive portion is located between the first RF terminal and the second RF terminal. When viewed from the thickness direction of the mounting substrate, the second conductive portion is adjacent to the first conductive portion. The resistivity of the first conductive portion is higher than that of the second conductive portion.

[0012] Another aspect of the present invention relates to a high-frequency module comprising a mounting substrate, electronic components, a resin layer, and a conductive layer. The mounting substrate has a main surface. The electronic components have a plurality of external terminals. The electronic components are mounted to the main surface of the mounting substrate via the plurality of external terminals. The resin layer is disposed on the main surface of the mounting substrate, at least covering the outer peripheral surface of the electronic components. The conductive layer covers the resin layer and overlaps with the electronic components when viewed from the thickness direction of the mounting substrate. The plurality of external terminals of the electronic components include a first RF terminal and a second RF terminal. The conductive layer includes a first conductive portion and a second conductive portion. When viewed from the thickness direction of the mounting substrate, the first conductive portion is located between the first RF terminal and the second RF terminal. When viewed from the thickness direction of the mounting substrate, the second conductive portion is adjacent to the first conductive portion. The resistivity of the first conductive portion is higher than the resistivity of the second conductive portion.

[0013] Another aspect of the present invention relates to a high-frequency module comprising a mounting substrate, a first electronic component, a second electronic component, a resin layer, and a conductive layer. The mounting substrate has a main surface. The first electronic component has a plurality of first external terminals, each including a first RF terminal. The first electronic component is mounted to the main surface of the mounting substrate via the plurality of first external terminals. The second electronic component has a plurality of second external terminals, each including a second RF terminal. The second electronic component is mounted to the main surface of the mounting substrate via the plurality of second external terminals. The resin layer is disposed on the main surface of the mounting substrate, at least covering the outer peripheral surfaces of the first and second electronic components. The conductive layer covers the resin layer and, when viewed from the thickness direction of the mounting substrate, overlaps with both the first and second electronic components. The conductive layer includes a first conductive portion and a second conductive portion. When viewed from the thickness direction of the mounting substrate, the first conductive portion is located between the first RF terminal and the second RF terminal. When viewed from the thickness direction of the mounting substrate, the second conductive portion is adjacent to the first conductive portion. The second conductive portion has a first metal layer and a second metal layer. The first metal layer comprises a first metal material, and the second metal layer is formed on the first metal layer and comprises a second metal material different from the first metal material. The first conductive portion has an alloy portion comprising the first metal material and the second metal material.

[0014] One aspect of the present invention relates to a communication device comprising a high-frequency module and a signal processing circuit as described above. The signal processing circuit is connected to the high-frequency module.

[0015] The effects of the invention

[0016] The high-frequency module and communication device described above by the present invention can achieve improved isolation. Attached Figure Description

[0017] Figure 1 This is a cross-sectional view of the high-frequency module involved in Implementation Method 1.

[0018] Figure 2 This is a top view of a partial cross-section of the same high-frequency module.

[0019] Figure 3 This is the circuit diagram of the same high-frequency module.

[0020] Figure 4 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0021] Figure 5 This is a top view of a partial cross-section of the high-frequency module involved in Variation 1 of Embodiment 1.

[0022] Figure 6 This is a top view of a partial cross-section of the high-frequency module involved in Variation 2 of Embodiment 1.

[0023] Figure 7 This is a top view of a partial cross-section of the high-frequency module involved in Variation 3 of Embodiment 1.

[0024] Figure 8 This is a cross-sectional view of the high-frequency module involved in variation 4 of implementation method 1.

[0025] Figure 9 This is a cross-sectional view of the high-frequency module involved in Variation 5 of Embodiment 1.

[0026] Figure 10 This is a cross-sectional view of the high-frequency module involved in Variation 6 of Embodiment 1.

[0027] Figure 11 This is a cross-sectional view of the high-frequency module involved in variation 7 of embodiment 1.

[0028] Figure 12 This is a cross-sectional view of the high-frequency module involved in Variation 8 of Embodiment 1.

[0029] Figure 13 This is a cross-sectional view of the high-frequency module involved in Implementation Method 2.

[0030] Figure 14 This is the circuit diagram of the same high-frequency module.

[0031] Figure 15 This is a cross-sectional view of the high-frequency module involved in Implementation Method 3.

[0032] Figure 16 This is a top view of a partial cross-section of the same high-frequency module.

[0033] Figure 17 This is a cross-sectional view of the high-frequency module involved in Implementation Method 4.

[0034] Figure 18 This is a cross-sectional view of the high-frequency module involved in Variation 1 of Embodiment 4.

[0035] Figure 19 This is a cross-sectional view of the high-frequency module involved in variation 2 of embodiment 4.

[0036] Figure 20 A through C are cross-sectional views of the main processes used to illustrate the manufacturing method of the high-frequency module described above.

[0037] Figure 21 A through C are cross-sectional views of the main processes used to illustrate the manufacturing method of the high-frequency module described above. Detailed Implementation

[0038] The figures referenced in the following embodiments are schematic diagrams, and the size ratios and thickness ratios of the structural elements in the figures may not reflect the actual size ratios.

[0039] (Implementation Method 1)

[0040] like Figure 1 and Figure 2 As shown, the high-frequency module 100 according to Embodiment 1 includes a mounting substrate 9, a first electronic component 1, a second electronic component 2, a resin layer 5, and a conductive layer 6. The mounting substrate 9 has a main surface 91. The first electronic component 1 and the second electronic component 2 are mounted on the main surface 91 of the mounting substrate 9. The resin layer 5 is disposed on the main surface 91 of the mounting substrate 9, covering the outer peripheral surface 14 of the first electronic component 1 and the outer peripheral surface 24 of the second electronic component 2. Furthermore, the resin layer 5 covers the upper surface 15 of the first electronic component 1 and the upper surface 25 of the second electronic component 2. The conductive layer 6 covers the resin layer 5. Figure 2 The illustration of resin layer 5 is omitted in the text.

[0041] Below, refer to Figures 1-4 To explain in more detail the high-frequency module 100 and communication device 300 involved in Embodiment 1.

[0042] (1) High-frequency modules and communication devices

[0043] (1.1) Circuit structure of high-frequency module and communication device

[0044] Reference Figure 3 and Figure 4 The circuit structure of the high-frequency module 100 and the communication device 300 involved in Embodiment 1 will be explained.

[0045] For example Figure 4 As shown, the high-frequency module 100 is used in the communication device 300. The communication device 300 is, for example, a portable telephone (e.g., a smartphone), but is not limited to this; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 100 is, for example, a module capable of supporting 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio).

[0046] The communication device 300 includes a high-frequency module 100, an antenna 310, a power amplifier 17, a low-noise amplifier 18, and a signal processing circuit 301. The communication device 300 also includes the antenna 310. The communication device 300 is configured, for example, to amplify a transmit signal input from the signal processing circuit 301 to the power amplifier 17 and output it to the antenna 310. Additionally, the communication device 300 is configured to amplify a receive signal input from the antenna 310 to the high-frequency module 100 using the low-noise amplifier 18 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a structural element of the high-frequency module 100, but rather a structural element of the communication device 300 including the high-frequency module 100. Furthermore, the power amplifier 17 and the low-noise amplifier 18 are not structural elements of the high-frequency module 100, but rather structural elements of the communication device 300; however, they are not limited to these components and may also be structural elements of the high-frequency module 100. The communication device 300 also includes a circuit board on which the high-frequency module 100 is mounted. The circuit board is, for example, a printed circuit board. The circuit board includes a ground electrode to which a ground potential is provided.

[0047] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes high-frequency signals. The RF signal processing circuit 302 performs up-conversion and other signal processing on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303, and outputs the processed high-frequency signal. Additionally, the RF signal processing circuit 302 performs down-conversion and other signal processing on the high-frequency signal (receive signal) output from the low-noise amplifier 18, and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates I-phase and Q-phase signals based on the baseband signal. The baseband signal can be, for example, an externally input audio signal, image signal, etc. The baseband signal processing circuit 303 performs IQ modulation processing by combining the I-phase and Q-phase signals and outputs the transmit signal. At this time, the transmitted signal is generated as a modulated signal (IQ signal) obtained by amplitude modulation of a carrier signal of a specified frequency with a period longer than the period of the carrier signal. The received signal, processed by the baseband signal processing circuit 303, is used, for example, as an image signal for image display, or as an audio signal for the user's conversation in the communication device 300. The high-frequency module 100 transmits high-frequency signals (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.

[0048] like Figure 3 and Figure 4 As shown, the high-frequency module 100 includes a transmit filter 7 and a receive filter 8. The transmit filter 7 is, for example, a filter with a transmit band of a first communication frequency band as its passband. The first communication frequency band corresponds to the transmitted signal passing through the transmit filter 7. The first communication frequency band is, for example, a communication band of the 3GPP LTE standard or a communication band of the 5G NR standard. The receive filter 8 is, for example, a filter with a receive band of the first communication frequency band as its passband. The first communication frequency band is, for example, a communication band of the 3GPP LTE standard or a communication band of the 5G NR standard. In the high-frequency module 100, the transmit filter 7 and the receive filter 8 constitute a first duplexer. In the high-frequency module 100, the transmit filter 7 constitutes the aforementioned first electronic component 1. Therefore, the first electronic component 1 is a transmission system circuit component disposed in the signal path of the transmitted signal. Furthermore, in the high-frequency module 100, the receive filter 8 constitutes the aforementioned second electronic component 2. Therefore, the second electronic component 2 is a receiving system circuit component disposed in the signal path of the received signal.

[0049] Additionally, the high-frequency module 100 includes an antenna terminal T0, a transmitting terminal (signal input terminal) T1, a receiving terminal (signal output terminal) T2, and multiple ground terminals T5 (in... Figure 1 Only one can be seen in the middle). Multiple ground terminals T5 are terminals that are provided with ground potential.

[0050] Power amplifier 17 has input terminals and output terminals. Power amplifier 17 amplifies the transmission signal input to the input terminals and outputs it from the output terminals. In communication device 300, the input terminals of power amplifier 17 are connected to signal processing circuit 301. In communication device 300, the output terminals of power amplifier 17 are connected to transmission terminal T1. Power amplifier 17 is, for example, a multi-stage amplifier including a driver stage amplifier and a final stage amplifier. In power amplifier 17, the input terminals of the driver stage amplifiers are connected to signal processing circuit 301, the output terminals of the driver stage amplifiers are connected to the input terminals of the final stage amplifiers, and the output terminals of the final stage amplifiers are connected to transmission terminal T1. Power amplifier 17 is not limited to a multi-stage amplifier; for example, it can also be an in-phase synthesizer, a differential synthesizer, or a Dougherty amplifier.

[0051] The low-noise amplifier 18 has an input terminal and an output terminal. The low-noise amplifier 18 amplifies the received signal input to the input terminal and outputs it from the output terminal. In the communication device 300, the input terminal of the low-noise amplifier 18 is connected to the receiving terminal T2. In the communication device 300, the output terminal of the low-noise amplifier 18 is connected to the signal processing circuit 301.

[0052] (1.2) Construction of high-frequency module

[0053] like Figure 1 and Figure 2 As shown, the high-frequency module 100 includes a mounting base plate 9, a transmitting filter 7, and a receiving filter 8.

[0054] Mounting substrate 9 has a main surface 91 (hereinafter also referred to as the first main surface 91). Mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of mounting substrate 9. Mounting substrate 9 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers 94. Multiple dielectric layers and multiple conductive layers 94 are stacked in the thickness direction D1 of mounting substrate 9. Multiple conductive layers 94 are formed in a predetermined pattern determined by each layer. Each conductive layer 94 includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of mounting substrate 9. The material of each conductive layer 94 is, for example, copper. Multiple conductive layers 94 include a ground layer. In high-frequency module 100, multiple ground terminals T5 are electrically connected to the ground layer via conductive paths 95, etc., provided by mounting substrate 9. Mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. Mounting substrate 9 is not limited to LTCC substrates; for example, it can also be a printed circuit board, HTCC (High Temperature Co-fired Ceramics) substrate, or resin multilayer substrate.

[0055] Furthermore, the mounting substrate 9 is not limited to an LTCC substrate; it can also be a wiring structure, for example. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. If there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. If there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first surface of two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure can also be, for example, an interposer. The interposer can be an interposer using a silicon substrate or a substrate constructed in a multilayer manner.

[0056] The first main surface 91 and the second main surface 92 of the mounting substrate 9 are separated in the thickness direction D1 of the mounting substrate 9 and intersect the thickness direction D1 of the mounting substrate 9. The first main surface 91 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but it may also include, for example, the side surface of the conductor portion, to be a surface that is not orthogonal to the thickness direction D1. Similarly, the second main surface 92 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but it may also include, for example, the side surface of the conductor portion, to be a surface that is not orthogonal to the thickness direction D1. Furthermore, the first main surface 91 and the second main surface 92 of the mounting substrate 9 may be formed with fine irregularities or recesses or protrusions. For example, if a recess is formed on the first main surface 91 of the mounting substrate 9, the inner surface of the recess is included in the first main surface 91.

[0057] In the high-frequency module 100, a first electronic component 1 (transmitting filter 7) is mounted on the main surface 91 of the mounting substrate 9. "The first electronic component 1 is mounted on the main surface 91 of the mounting substrate 9" includes: the first electronic component 1 is disposed on the main surface 91 of the mounting substrate 9 (mechanically connected to the main surface 91 of the mounting substrate 9); and the first electronic component 1 is electrically connected to the mounting substrate 9 (a suitable conductor portion). In the high-frequency module 100, the first electronic component 1 has a plurality of first external terminals 10, and the first electronic component 1 is mounted on the main surface 91 of the mounting substrate 9 via the plurality of first external terminals 10. In the high-frequency module 100, a second electronic component 2 is also mounted on the main surface 91 of the mounting substrate 9. "The second electronic component 2 is mounted on the main surface 91 of the mounting substrate 9" includes: the second electronic component 2 is disposed on the main surface 91 of the mounting substrate 9 (mechanically connected to the main surface 91 of the mounting substrate 9); and the second electronic component 2 is electrically connected to the mounting substrate 9 (a suitable conductor portion). In the high-frequency module 100, the second electronic component 2 has a plurality of second external terminals 20, and the second electronic component 2 is mounted on the main surface 91 of the mounting substrate 9 through the plurality of second external terminals 20.

[0058] The transmitting filter 7 is, for example, a trapezoidal filter having multiple (e.g., 4) series-arm resonators and multiple (e.g., 3) parallel-arm resonators. The transmitting filter 7 is, for example, an elastic wave filter. Each of the multiple series-arm and multiple parallel-arm resonators in the elastic wave filter is an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In the SAW filter, each of the multiple series-arm and multiple parallel-arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

[0059] like Figure 1 and Figure 2As shown, the transmitting filter 7 constituting the first electronic component 1 is mounted on the main surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer edge of the transmitting filter 7 is quadrilateral. The outer peripheral surface 14 of the first electronic component 1 includes four side surfaces connecting the upper surface 15 (the main surface opposite to the side of the mounting substrate 9) and the lower surface (the main surface on the side of the mounting substrate 9) of the first electronic component 1. For example... Figure 1 As shown, the transmitting filter 7 includes a substrate 70 and a circuit section 74. The substrate 70 has a first main surface 71 and a second main surface 72 facing each other in the thickness direction of the substrate 70. The thickness direction of the substrate 70 is along the thickness direction D1 of the mounting substrate 9. The circuit section 74 includes a plurality of IDT (Interdigital Transducer) electrodes 75 formed on the first main surface 71 of the substrate 70. The transmitting filter 7 includes a plurality of wiring electrodes 73 formed on the first main surface 71 of the substrate 70. The plurality of wiring electrodes 73 are connected to the circuit section 74. In addition, the transmitting filter 7 includes a spacer layer 76, a housing member 77, and a plurality of external terminals 79 as structural elements of the packaging structure. The plurality of external terminals 79 are connected to the wiring electrodes 73 that overlap in the thickness direction of the substrate 70. In the high-frequency module 100, the plurality of external terminals 79 of the transmitting filter 7 constitute a plurality of first external terminals 10 of the first electronic component 1. Furthermore, the external terminal 79, which serves as an input terminal for a high-frequency signal (transmit signal), constitutes a first RF terminal 11 included in the plurality of first external terminals 10. In the high-frequency module 100 according to Embodiment 1, the first RF terminal 11 is a first external terminal 10 connected to the transmitting terminal T1 among the plurality of first external terminals 10. When viewed from the thickness direction D1 of the mounting substrate 9, the transmitting filter 7 is rectangular in shape, but is not limited thereto; for example, it may also be square in shape. In the transmitting filter 7, the substrate 70 is a piezoelectric substrate, such as a lithium tantalate substrate or a lithium niobate substrate.

[0060] A spacer layer 76 is disposed on the first main surface 71 side of the substrate 70. When viewed from the thickness direction of the substrate 70, the spacer layer 76 surrounds a plurality of IDT electrodes 75. When viewed from the thickness direction of the substrate 70, the spacer layer 76 is rectangular. The spacer layer 76 is electrically insulating. The material of the spacer layer 76 is epoxy resin, polyimide, etc. A housing member 77 is flat. The housing member 77 is disposed on the spacer layer 76 facing the substrate 70 in the thickness direction of the substrate 70. The housing member 77 overlaps with and is separated from the plurality of IDT electrodes 75 in the thickness direction of the substrate 70. The housing member 77 is electrically insulating. The material of the housing member 77 is epoxy resin, polyimide, etc. The transmitting filter 7 has a first space 78 surrounded by the substrate 70, the spacer layer 76, and the housing member 77. A gas is present in the first space 78. The gas is air, an inert gas (e.g., nitrogen), etc. Multiple external terminals 79 are exposed from the housing component 77.

[0061] The receiving filter 8 is, for example, a trapezoidal filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. The receiving filter 8 is, for example, an elastic wave filter. Each of the multiple series-arm and multiple parallel-arm resonators in the elastic wave filter is an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave (SAW) filter utilizing surface acoustic waves. In the SAW filter, each of the multiple series-arm and multiple parallel-arm resonators is, for example, a SAW resonator.

[0062] like Figure 1 and Figure 2 As shown, the receiving filter 8 constituting the second electronic component 2 is mounted on the main surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer edge of the receiving filter 8 is quadrilateral. The outer peripheral surface 24 of the second electronic component 2 includes four side surfaces connecting the upper surface 25 (the main surface opposite to the side of the mounting substrate 9) and the lower surface (the main surface on the side of the mounting substrate 9) of the second electronic component 2. Figure 1As shown, the receiving filter 8 includes a substrate 80 and a circuit section 84. The substrate 80 has a first main surface 81 and a second main surface 82 facing each other in the thickness direction of the substrate 80. The thickness direction of the substrate 80 is along the thickness direction D1 of the mounting substrate 9. The circuit section 84 includes a plurality of IDT electrodes 85 formed on the first main surface 81 of the substrate 80. The receiving filter 8 includes a plurality of wiring electrodes 83 formed on the first main surface 81 of the substrate 80. The plurality of wiring electrodes 83 are connected to the circuit section 84. In addition, the receiving filter 8 includes a spacer layer 86, a housing member 87, and a plurality of external terminals 89 as structural elements of the packaging structure. The plurality of external terminals 89 are connected to the wiring electrodes 83 that overlap in the thickness direction of the substrate 80. In the high-frequency module 100, the plurality of external terminals 89 of the receiving filter 8 constitute a plurality of second external terminals 20 of the second electronic component 2. In addition, the external terminal 89 among the plurality of external terminals 89 that serves as an output terminal for a high-frequency signal (received signal) constitutes a second RF terminal 21 included in the plurality of second external terminals 20. In the high-frequency module 100 according to Embodiment 1, the second RF terminal 21 is one of the plurality of second external terminals 20 connected to the receiving terminal T2. When viewed from the thickness direction D1 of the mounting substrate 9, the receiving filter 8 is rectangular in shape, but is not limited thereto; for example, it could also be square. In the receiving filter 8, the substrate 80 is a piezoelectric substrate, such as a lithium tantalate substrate or a lithium niobate substrate.

[0063] A spacer layer 86 is disposed on the first main surface 81 side of the substrate 80. When viewed from the thickness direction of the substrate 80, the spacer layer 86 surrounds a plurality of IDT electrodes 85. When viewed from the thickness direction of the substrate 80, the spacer layer 86 is rectangular. The spacer layer 86 is electrically insulating. The material of the spacer layer 86 is epoxy resin, polyimide, etc. A housing member 87 is flat. The housing member 87 is disposed on the spacer layer 86 facing the substrate 80 in the thickness direction of the substrate 80. The housing member 87 overlaps with and is separated from the plurality of IDT electrodes 85 in the thickness direction of the substrate 80. The housing member 87 is electrically insulating. The material of the housing member 87 is epoxy resin, polyimide, etc. The receiving filter 8 has a second space 88 surrounded by the substrate 80, the spacer layer 86, and the housing member 87. A gas is present in the second space 88. The gas is air, an inert gas (e.g., nitrogen), etc. Multiple external terminals 89 are exposed from housing component 87.

[0064] The high-frequency module 100 has multiple external connection terminals. These external connection terminals include a transmitting terminal (signal input terminal) T1, a receiving terminal (signal output terminal) T2, and multiple ground terminals T5 (in...). Figure 1Only one can be seen in the image. Multiple external connection terminals are disposed on the second main surface 92 of the mounting substrate 9. "External connection terminals disposed on the second main surface 92 of the mounting substrate 9" includes: mechanical connection between the external connection terminals and the second main surface 92 of the mounting substrate 9; and electrical connection between the external connection terminals and (appropriate conductor portions) of the mounting substrate 9. The material of the multiple external connection terminals is, for example, metal (e.g., copper, copper alloy, etc.). The multiple external connection terminals are not structural elements of the mounting substrate 9, but may be structural elements of the mounting substrate 9. Each of the multiple external connection terminals can be either a cylindrical electrode (e.g., a cylindrical electrode) or a spherical bump.

[0065] Multiple ground terminals T5 are electrically connected to the ground plane of the mounting substrate 9. The ground plane is the circuit ground of the high-frequency module 100. Ground terminals included in the multiple external terminals 79 of the transmitting filter 7 are electrically connected to the ground plane of the mounting substrate 9. Ground terminals included in the multiple external terminals 89 of the multiple receiving filters 8 are electrically connected to the ground plane of the mounting substrate 9.

[0066] like Figure 1 As shown, resin layer 5 is disposed on the main surface 91 of mounting substrate 9. Resin layer 5 covers the outer peripheral surface 14 of the first electronic component 1 and the outer peripheral surface 24 of the second electronic component 2 mounted on the main surface 91 of mounting substrate 9. Furthermore, in the high-frequency module 100 according to Embodiment 1, resin layer 5 also covers the upper surface 25 of the first electronic component 1 and the upper surface 25 of the second electronic component 2. Resin layer 5 contains resin (e.g., epoxy resin). Resin layer 5 may also contain fillers in addition to resin. Resin layer 5 has electrical insulating properties.

[0067] The conductive layer 6 covers the resin layer 5. The conductive layer 6 is conductive. In the high-frequency module 100, the conductive layer 6 is provided for electromagnetic shielding of the high-frequency module 100 both inside and outside. The conductive layer 6 covers the main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9. The conductive layer 6 is in contact with at least a portion of the outer peripheral surface of the ground layer of the mounting substrate 9. Therefore, the potential of the conductive layer 6 can be made the same as the potential of the ground layer.

[0068] The conductive layer 6 includes a first conductive portion 61 and a second conductive portion 62. Viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 is located between the first RF terminal 11 of the first electronic component 1 and the second RF terminal 21 of the second electronic component 2. Viewed from the thickness direction D1, the second conductive portion 62 is adjacent to the first conductive portion 61. Regarding the conductive layer 6, "viewed from the thickness direction D1, the second conductive portion 62 is adjacent to the first conductive portion 61" means that the second conductive portion 62 and the first conductive portion 61 are adjacent to each other and continuous. In the high-frequency module 100 according to Embodiment 1, when viewed from the thickness direction D1, the second conductive portion 62 is the portion other than the first conductive portion 61, but it is not necessarily the entire portion other than the first conductive portion 61. In the high-frequency module 100 according to Embodiment 1, when viewed from the thickness direction D1 of the mounting substrate 9, the first electronic component 1 and the second electronic component 2 are adjacent. "The first electronic component 1 and the second electronic component 2 are adjacent" means that when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the first electronic component 1 and the second electronic component 2, and the first electronic component 1 and the second electronic component 2 are adjacent to each other.

[0069] Regarding the first conductive portion 61, "located between the first RF terminal 11 of the first electronic component 1 and the second RF terminal 21 of the second electronic component 2 when viewed from the thickness direction D1 of the mounting substrate 9" means that, when viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 intersects any straight line connecting any point of the first RF terminal 11 and any point of the second RF terminal 21. When viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 is separate from both the first RF terminal 11 and the second RF terminal 21. In other words, when viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 does not overlap with either the first RF terminal 11 or the second RF terminal 21.

[0070] like Figure 2As shown, when viewed from the thickness direction D1 of the mounting substrate 9, in a direction orthogonal to the direction in which the first RF terminal 11 and the second RF terminal 21 are parallel, the length H61 of the first conductive portion 61 is longer than the length H11 of the first RF terminal 11 and the length H21 of the second RF terminal 21. When viewed from the thickness direction D1 of the mounting substrate 9, in a direction orthogonal to the direction in which the first RF terminal 11 and the second RF terminal 21 are parallel, the length H61 of the first conductive portion 61 is longer than the length H1 of the first electronic component 1 and the length H2 of the second electronic component 2, but shorter than the length of the mounting substrate 9. "The direction in which the first RF terminal 11 and the second RF terminal 21 are parallel when viewed from the thickness direction D1 of the mounting substrate 9" refers to the direction in which the center of the first RF terminal 11 and the center of the second RF terminal 21 are parallel when viewed from the thickness direction D1 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer edges of each of the first RF terminal 11 and the second RF terminal 21 are, for example, circular.

[0071] When viewed from the thickness direction D1 of the mounting substrate 9, in the direction where the first RF terminal 11 and the second RF terminal 21 are side by side, the length W61 of the first conductive portion 61 is greater than the distance W12 between the first electronic component 1 and the second electronic component 2 (see reference). Figure 1 It is longer than the distance between the first RF terminal 11 and the second RF terminal 21.

[0072] In the high-frequency module 100, the second conductive portion 62 includes a first layer 621, a second layer 622 on the first layer 621, and a third layer 623 on the second layer 622. The first layer 621 covers the main surface 51 and the outer peripheral surface 53 of the resin layer 5. The second layer 622 covers the first layer 621. The third layer 623 covers the second layer 622.

[0073] In the second conductive portion 62 of the high-frequency module 100 according to Embodiment 1, the first layer 621, the second layer 622, and the third layer 623 are respectively a first SUS (stainless steel) layer, a Cu layer, and a second SUS (stainless steel) layer. The first and second SUS layers are each made of an alloy containing Fe, Ni, and Cr. The Cu layer is made of Cu. In the second conductive portion 62, the resistivity of the second layer 622 is lower than that of both the first and third layers 621 and 623. The first layer 621 is a material with superior adhesion to the resin layer 5 compared to the second layer 622. The third layer 623 is a material with superior oxidation resistance compared to the second layer 622. Furthermore, in the second conductive portion 62, the thickness of the second layer 622 is greater than that of both the first and third layers 621 and 623. Alternatively, the first layer 621, the second layer 622, and the third layer 623 can be the first Ti layer, the Cu layer, and the second Ti layer, respectively. Alternatively, the first layer 621, the second layer 622, and the third layer 623 can be the first Ti layer, the Au layer, and the second Ti layer, respectively.

[0074] In the high-frequency module 100 according to Embodiment 1, the resistivity of the first conductive portion 61 is higher than the resistivity of the second conductive portion 62. Here, the resistivity of the first conductive portion 61 is the resistivity of the Cu-SUS alloy portion. The resistivity of the second conductive portion 62 is the resistivity of the second layer 622 (the layer with the lowest resistivity among the multiple layers constituting the second conductive portion 62, i.e., the resistivity of the Cu layer). The resistivity of the first conductive portion 61 and the resistivity of the second conductive portion 62 are obtained by exposing the cross-sections of the first conductive portion 61 and the second conductive portion 62 of the conductive layer 6 and measuring the extended resistance of each of the first conductive portion 61 and the second conductive portion 62 using a scanning extended resistance microscopy method. Furthermore, the resistivity is the value obtained by converting the measured extended resistance into resistivity using a scanning extended resistance microscopy method. When converting the measured extended resistance into resistivity, the measured extended resistance is compared with the measured value of the extended resistance of a calibration standard sample. When discussing the relative magnitudes of resistivity, resistivity is not limited to values ​​obtained by using a scanning extended resistance microscope; it can also be obtained by using an extended resistance measurement method.

[0075] (1.3) Manufacturing method of high frequency module

[0076] As a manufacturing method for the high-frequency module 100, for example, a manufacturing method including a first process, a second process, a third process, and a fourth process can be adopted.

[0077] The first process is as follows: Install the first electronic component 1 and the second electronic component 2 on the main surface 91 of the mounting substrate 9.

[0078] The second process is as follows: forming a resin layer 5 covering the first electronic component 1 and the second electronic component 2 on the main surface 91 of the mounting substrate 9.

[0079] The third process is as follows: forming a laminate of the first layer 621, the second layer 622, and the third layer 623 by covering the entire main surface 51 of the resin layer 5, the entire outer peripheral surface 53, and the entire outer peripheral surface 93 of the mounting substrate 9. In the third process, the method for forming the first layer 621, the second layer 622, and the third layer 623 is, for example, sputtering, vapor deposition, or printing.

[0080] The fourth step is as follows: irradiating a portion of the laminate of the first layer 621, the second layer 622, and the third layer 623 located in the area where the first conductive portion 61 is to be formed with a laser beam to modify it, thereby forming the first conductive portion 61, which includes an alloy portion of SUS and Cu. This fourth step can also be used as a printing step to print the model number of the high-frequency module 100, etc., by irradiating the conductive layer 6 with a laser beam.

[0081] (2) Effect

[0082] (2.1) High-frequency module

[0083] The high-frequency module 100 according to Embodiment 1 includes a mounting substrate 9, a first electronic component 1, a second electronic component 2, a resin layer 5, and a conductive layer 6. The mounting substrate 9 has a main surface 91. The first electronic component 1 has a plurality of first external terminals 10 including a first RF terminal 11. The first electronic component 1 is mounted to the main surface 91 of the mounting substrate 9 via the plurality of first external terminals 10. The second electronic component 2 has a plurality of second external terminals 20 including a second RF terminal 21. The second electronic component 2 is mounted to the main surface 91 of the mounting substrate 9 via the plurality of second external terminals 20. The resin layer 5 is disposed on the main surface 91 of the mounting substrate 9, at least covering the outer peripheral surface 14 of the first electronic component 1 and the outer peripheral surface 24 of the second electronic component 2. The conductive layer 6 covers the resin layer 5, and when viewed from the thickness direction D1 of the mounting substrate 9, the conductive layer 6 overlaps with the first electronic component 1 and the second electronic component 2. The conductive layer 6 includes a first conductive portion 61 and a second conductive portion 62. When viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 is located between the first RF terminal 11 and the second RF terminal 21. When viewed from the thickness direction D1 of the mounting substrate 9, the second conductive portion 62 is adjacent to the first conductive portion 61. The resistivity of the first conductive portion 61 is higher than that of the second conductive portion 62.

[0084] The high-frequency module 100 according to Embodiment 1 can achieve improved isolation. In the high-frequency module 100, a first parasitic capacitor is formed between the first RF terminal 11 of the first electronic component 1 and the conductive layer 6 (second conductive portion 62) in the thickness direction D1 of the mounting substrate 9. Additionally, in the high-frequency module 100, a second parasitic capacitor is formed between the second RF terminal 21 of the second electronic component 2 and the conductive layer 6 (second conductive portion 62) in the thickness direction D1 of the mounting substrate 9. In the high-frequency module 100, the conductive layer 6 has a first conductive portion 61, thus it is possible to form a leakage path including the first RF terminal 11, the first parasitic capacitor, a portion of the conductive layer 6, the second parasitic capacitor, and the second RF terminal 21. However, the high-frequency module 100 includes a first conductive portion 61 located between the first RF terminal 11 and the second RF terminal 21 when viewed from the thickness direction D1 of the mounting substrate 9. The resistivity of the first conductive portion 61 is higher than that of the second conductive portion 62. Therefore, compared to the case where the resistivity of the first conductive portion 61 and the second conductive portion 62 are the same, the resistance of the leakage path can be increased. Thus, the high-frequency module 100 can improve the isolation between the first RF terminal 11 of the first electronic component 1 and the second RF terminal 21 of the second electronic component 2.

[0085] In the comparative example where a slit is formed in the conductive layer 6 to expose a portion of the main surface 51 of the resin layer 5, the moisture resistance decreases, and it becomes susceptible to external noise. Furthermore, in this comparative example, the slit becomes the dielectric of a parasitic capacitor, and leakage through the conductive layer 6 between the first RF terminal 11 of the first electronic component 1 and the second RF terminal 21 of the second electronic component 2 tends to increase. In contrast, the high-frequency module 100 according to Embodiment 1 can suppress the decrease in moisture resistance, is less susceptible to external noise, and achieves improved isolation between the first RF terminal 11 of the first electronic component 1 and the second RF terminal 21 of the second electronic component 2.

[0086] In the high-frequency module 100, for example, the second layer 622 of the second conductive portion 62 can be defined as a first metal layer 62A containing a first metal material (e.g., Cu), and the third layer 623 of the second conductive portion 62 can be defined as a second metal layer 62B containing a second metal material different from the first metal material (e.g., SUS). In this case, in the high-frequency module 100, the second conductive portion 62 has a first metal layer 62A containing the first metal material and a second metal layer 62B formed on the first metal layer 62A containing a second metal material different from the first metal material, and the first conductive portion 61 includes an alloy portion containing both the first and second metal materials. Therefore, the high-frequency module 100 can achieve improved isolation.

[0087] (2.2) Communication device

[0088] The communication device 300 according to Embodiment 1 includes a signal processing circuit 301 and a high-frequency module 100. The signal processing circuit 301 is connected to the high-frequency module 100.

[0089] The communication device 300 according to Embodiment 1 includes a high-frequency module 100, thereby enabling improved isolation.

[0090] (3) Variations of the high-frequency module

[0091] (3.1) Variation Example 1

[0092] Reference Figure 5 The high-frequency module 100 described in Modification 1 of Embodiment 1 will be explained. For the high-frequency module 100 in Modification 1, the same reference numerals are used for the same structural elements as those in the high-frequency module 100 in Embodiment 1, and the description is omitted.

[0093] The high-frequency module 100 in Modification Example 1 differs from the high-frequency module 100 in Embodiment 1 in the following aspects: in the thickness direction D1 from the mounting substrate 9 (refer to...) Figure 1 When viewed from above, the lengths H61 and W61 of the first conductive portion 61 are different from the lengths H61 and W61 of the first conductive portion 61 in the high-frequency module 100 according to Embodiment 1.

[0094] In the high-frequency module 100 of Modification 1, the length H61 of the first conductive portion 61 is shorter than the length H1 of the first electronic component 1 and the length H2 of the second electronic component 2. Furthermore, the length W61 of the first conductive portion 61 is shorter than the distance W12 between the first electronic component 1 and the second electronic component 2.

[0095] In the high-frequency module 100 involved in Modification 1, when viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 of the conductive layer 6 does not overlap with the first electronic component 1 and the second electronic component 2.

[0096] (3.2) Variation Example 2

[0097] Reference Figure 6 The high-frequency module 100 involved in Variation 2 of Embodiment 1 will be described below. For the high-frequency module 100 involved in Variation 2, the same reference numerals are used for the same structural elements as those involved in the high-frequency module 100 involved in Embodiment 1, and the description is omitted.

[0098] In the high-frequency module 100 involved in Modification Example 2, in the thickness direction D1 from the mounting substrate 9 (refer to...) Figure 1When viewed from above, the length H61 of the first conductive portion 61 is longer than the length H1 of the first electronic component 1 and the length H2 of the second electronic component 2. When viewed from above in the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 is formed across both ends of the conductive layer 6, and the length H61 of the first conductive portion 61 is longer than the length of the mounting substrate 9. Furthermore, the length W61 of the first conductive portion 61 is shorter than the distance W12 between the first electronic component 1 and the second electronic component 2.

[0099] In the high-frequency module 100 involved in Modification Example 2, when viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 of the conductive layer 6 does not overlap with the first electronic component 1 and the second electronic component 2.

[0100] In the high-frequency module 100 involved in Modification 2, the formation of leakage paths caused by signals entering the second conductive part 62 can be further suppressed.

[0101] (3.3) Variation Example 3

[0102] Reference Figure 7 The high-frequency module 100 involved in Variation 3 of Embodiment 1 will be described below. Regarding the high-frequency module 100 involved in Variation 3, the same labels are used for the same structural elements as those involved in Variation 2 of Embodiment 1, and the description is omitted.

[0103] The high-frequency module 100 involved in Modification 3 includes two first electronic components 1 (transmitting filters 7) and two second electronic components 2 (receiving filters 8). The two transmitting filters 7 are transmitting filters with passbands of different frequency bands. The two receiving filters 8 are receiving filters with passbands of different frequency bands. The high-frequency module 100 involved in Modification 3 includes a first duplexer and a second duplexer. The first duplexer includes a transmitting filter 7 with a passband of a first communication frequency band and a receiving filter 8 with a receiving frequency band of the first communication frequency band. The second duplexer includes a transmitting filter 7 with a passband of a second communication frequency band and a receiving filter 8 with a receiving frequency band of the second communication frequency band.

[0104] (3.4) Variation Example 4

[0105] Reference Figure 8 The high-frequency module 100 according to Variation 4 of Embodiment 1 will be described below. For the high-frequency module 100 according to Variation 4, the same structural elements as those in the high-frequency module 100 according to Embodiment 1 will be marked with the same reference numerals and the description will be omitted.

[0106] In the high-frequency module 100 of Variation 4, the material of the first conductive portion 61 is, for example, SUS. The material of the first conductive portion 61 is not limited to SUS; it can also be, for example, Ti, Ni, or iron oxide. The first conductive portion 61 is not limited to a single-layer structure; it can also be a multilayer structure, for example, a multilayer structure having an SUS layer and a Ni layer, or a multilayer structure having a Ti layer and a Ni layer. The second conductive portion 62 is a single-layer structure formed of a material with a lower resistivity than the first conductive portion 61, but it is not limited to this; it can also be the same as the high-frequency module 100 of Embodiment 1 (see...). Figure 1 Similarly, it has a stacked structure with a first layer 621, a second layer 622, and a third layer 623.

[0107] The manufacturing method of the high-frequency module 100 in Modification 4 is different from the manufacturing method of the high-frequency module in Embodiment 1. In the manufacturing method of the high-frequency module in Modification 4, when forming the conductive layer 6, a second conductive portion 62 is formed covering the main surface 51 and the outer peripheral surface 53 of the resin layer 5 and the outer peripheral surface 93 of the mounting substrate 9. Then, the first conductive portion 61 is formed by a liftoff method.

[0108] In the high-frequency module 100 involved in Modification Example 4, the degree of freedom in selecting the material of the first conductive part 61 is increased.

[0109] (3.5) Variation Example 5

[0110] Reference Figure 9 The high-frequency module 100 according to Variation 5 of Embodiment 1 will be described below. For the high-frequency module 100 according to Variation 5, the same structural elements as those in the high-frequency module 100 according to Embodiment 1 will be marked with the same reference numerals and the description will be omitted.

[0111] The high-frequency module 100 in Modification 5 differs from the high-frequency module 100 in Embodiment 1 in the following aspects: the conductive layer 6 further covers the upper surface 15 of the first electronic component 1 and the upper surface 25 of the second electronic component 2, and the upper surface 15 of the first electronic component 1 and the upper surface 25 of the second electronic component 2 are in contact with the conductive layer 6. Furthermore, the high-frequency module 100 in Modification 5 differs from the high-frequency module 100 in Embodiment 1 in the following aspects: the first conductive portion 61 has a stacked structure of a first layer 611 and a second layer 612.

[0112] In the high-frequency module 100 of Modification 5, the conductive layer 6 is in contact with the entire area of ​​the upper surface 25 of the first electronic component 1, thus improving heat dissipation compared to the high-frequency module 100 of Embodiment 1.

[0113] The first layer 611 of the first conductive portion 61 is made of the same material and has the same thickness as the first layer 621 of the second conductive portion 62. The material of the first layer 611 of the first conductive portion 61 is, for example, SUS. The first layer 611 of the first conductive portion 61 and the first layer 621 of the second conductive portion 62 are continuous, integral layers without boundaries. The second layer 612 of the first conductive portion 61 is made of the same material and has the same thickness as the third layer 623 of the second conductive portion 62. The material of the second layer 612 of the first conductive portion 61 is, for example, SUS. The second layer 612 of the first conductive portion 61 and the third layer 623 of the second conductive portion 62 are continuous, integral layers without boundaries. The material of the second layer 622 of the second conductive portion 62 is Cu.

[0114] The manufacturing method of the high-frequency module 100 involved in Variation Example 5 is different from the manufacturing method of the high-frequency module involved in Embodiment 1.

[0115] As a manufacturing method for the high-frequency module 100 involved in Modification 5, a manufacturing method including a first process, a second process, a third process, and a fourth process can be adopted.

[0116] The first process is as follows: Install the first electronic component 1 and the second electronic component 2 on the main surface 91 of the mounting substrate 9.

[0117] The second process is as follows: forming a resin material layer on the main surface 91 of the mounting substrate 9 as the basis for the resin layer 5 covering the first electronic component 1 and the second electronic component 2.

[0118] The third process is as follows: The resin material layer is ground from the main surface of the first resin material layer on the side opposite to the mounting substrate 9, and the resin material layer, the first electronic component 1, and the second electronic component 2 are further ground, thereby forming the resin layer 5 and thinning both the first electronic component 1 and the second electronic component 2. In the third process, the upper surface 15 of the first electronic component 1 and the upper surface 25 of the second electronic component 2 are roughened (unevenened) by grinding the first electronic component 1 and the second electronic component 2.

[0119] The fourth step is the formation of the conductive layer 6. This fourth step includes a first step, a second step, and a third step. In the first step, a first layer 611 of the first conductive portion 61 and a first layer 621 of the second conductive portion 62 are formed, for example, by sputtering, vapor deposition, or printing, to cover the resin layer 5. In the second step, a second layer 622 of the second conductive portion 62 is formed, for example, by sputtering, photolithography, or etching. In the third step, a second layer 612 of the first conductive portion 61 and a third layer 623 of the second conductive portion 62 are formed, for example, by sputtering, vapor deposition, or printing.

[0120] In the manufacturing method of the high-frequency module 100 according to Modification 5, the second conductive part 62 can be formed without irradiating the laser beam. Therefore, it has the following advantages: when the second conductive part 62 is in contact with a part of the upper surface 15 of the first electronic component 1 and a part of the upper surface 25 of the second electronic component 2, the first electronic component 1 and the second electronic component 2 will not be affected by the heat from the laser beam.

[0121] Compared to the high-frequency module 100 of Embodiment 1, the high-frequency module 100 of Modification 5 can have a thinner first conductive portion 61. As a result, the high-frequency module 100 of Modification 5 can have a higher resistance in the direction in which the first conductive portion 61 is aligned with the second RF terminal 21 when viewed from the thickness direction D1 of the mounting substrate 9, thereby improving the isolation.

[0122] (3.6) Variation Example 6

[0123] Reference Figure 10 The high-frequency module 100 involved in Variation 6 of Embodiment 1 will be described below. Regarding the high-frequency module 100 involved in Variation 6, the same labels are used for the same structural elements as those involved in Variation 5 of Embodiment 1, and the description is omitted.

[0124] The high-frequency module 100 involved in Modification 6 differs from the high-frequency module 100 involved in Modification 5 in the following aspects: the upper surface 25 of the second electronic component 2 is not in contact with the conductive layer 6.

[0125] Furthermore, the high-frequency module 100 involved in Modification 6 differs from the high-frequency module 100 involved in Modification 5 in the following aspects: the first conductive part 61 has a single-layer structure instead of a stacked structure.

[0126] In the high-frequency module 100 of Variation 6, the second conductive portion 62 has a two-layer structure consisting of a first layer 621 and a second layer 622. The material of the first layer 621 is, for example, Ti. The material of the second layer 622 is, for example, Au. The material of the first conductive portion 61 is the same as that of the first layer 621 of the second conductive portion 62, for example, Ti.

[0127] In the high-frequency module 100 of Modification 6, the upper surface 25 of the second electronic component 2, which is composed of the receiving filter 8, is not in contact with the conductive layer 6. Therefore, it is possible to suppress the heat generated by the first electronic component 1, which is composed of the transmitting filter 7, from being transferred to the second electronic component 2 via the conductive layer 6.

[0128] (3.7) Variation Example 7

[0129] Reference Figure 11The high-frequency module 100 described in variation 7 of embodiment 1 will be explained. For the high-frequency module 100 described in variation 7, the same reference numerals are used for the same structural elements as those described in variation 5 of embodiment 1, and the descriptions are omitted.

[0130] The high-frequency module 100 of Modification 7 differs from the high-frequency module 100 of Modification 5 in that the first conductive portion 61 is an alloy of the metal material of the first layer 621 of the second conductive portion 62 and the second metal material of the second conductive portion 62. Furthermore, the high-frequency module 100 of Modification 7 differs from the high-frequency module 100 of Modification 5 in that the first conductive portion 61 has a single-layer structure instead of a multi-layer structure.

[0131] (3.8) Variation Example 8

[0132] Reference Figure 12 The high-frequency module 100 involved in Variation 8 of Embodiment 1 will be described below. Regarding the high-frequency module 100 involved in Variation 8, compared with Variation 5 of Embodiment 1 (see...) Figure 9 The high-frequency module 100 involved has the same structural elements, marked with the same label and the description is omitted.

[0133] In the high-frequency module 100 of Modification 8, similarly to the high-frequency module 100 of Modification 5, the first conductive portion 61 has a stacked structure of a first layer 611 and a second layer 612. The first layer 611 is formed of the same material as the first layer 621 of the second conductive portion 62 (e.g., SUS), and the second layer 612 is formed of the same material as the third layer 623 of the second conductive portion 62 (e.g., SUS). The high-frequency module 100 of Modification 8 differs from the high-frequency module 100 of Modification 5 in that the thickness of the second layer 612 of the first conductive portion 61 is the same as the total thickness of the second layer 622 and the third layer 623 of the second conductive portion 62.

[0134] (Implementation Method 2)

[0135] Below, refer to Figure 13 and Figure 14 The high-frequency module 100b according to Embodiment 2 will be described below. For the high-frequency module 100b according to Embodiment 2, the same structural elements as those in the high-frequency module 100 according to Embodiment 1 will be marked with the same reference numerals and the description will be omitted.

[0136] The high-frequency module 100b according to Embodiment 2 differs from the high-frequency module 100 according to Embodiment 1 in the following aspects: Figure 14As shown, the device includes a first matching element 19 connected between the transmitting filter 7 and the transmitting terminal T1, and a second matching element 29 connected between the receiving filter 8 and the receiving terminal T2. The first matching element 19 is, for example, a first inductor L1. The second matching element 29 is, for example, a second inductor L2.

[0137] In the high-frequency module 100b, the first inductor L1 is a first surface-mount electronic component, constituting the first electronic component 1. The second inductor L2 is a second surface-mount component, constituting the second electronic component 2. The first inductor L1 has two first external terminals 10, which constitute the first RF terminal 11 of the first electronic component 1. The second inductor L2 has two second external terminals 20, which constitute the second RF terminal 21 of the second electronic component 2.

[0138] In the high-frequency module 100b, when viewed from the thickness direction D1 of the mounting substrate 9, the first inductor L1 is adjacent to the transmitting filter 7. "The first inductor L1 is adjacent to the transmitting filter 7" means that, when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the first inductor L1 and the transmitting filter 7, and the first inductor L1 and the transmitting filter 7 are adjacent to each other. Furthermore, in the high-frequency module 100b, when viewed from the thickness direction D1 of the mounting substrate 9, the second inductor L2 is adjacent to the receiving filter 8. "The second inductor L2 is adjacent to the receiving filter 8" means that, when viewed from the thickness direction D1 of the mounting substrate 9, there are no other circuit components between the second inductor L2 and the receiving filter 8, and the second inductor L2 and the receiving filter 8 are adjacent to each other.

[0139] In the high-frequency module 100b, when viewed from the thickness direction D1 of the mounting substrate 9, the first inductor L1, the transmitting filter 7, the receiving filter 8, and the second inductor L2 are arranged in the order of first inductor L1, transmitting filter 7, receiving filter 8, and second inductor L2, starting from the side of the first inductor L1.

[0140] In the high-frequency module 100b, the first conductive portion 61 has a stacked structure of a first layer 611 and a second layer 612. The material of the first layer 611 of the first conductive portion 61 is the same as the material of the first layer 621 of the second conductive portion 62. The second layer 612 of the first conductive portion 61 is an alloy of the material of the second layer 622 of the second conductive portion 62 and the material of the third layer 623.

[0141] In the high-frequency module 100b, the isolation between the first RF terminal 11 of the first electronic component 1, which is composed of the first inductor L1, and the second RF terminal 21 of the second electronic component 2, which is composed of the second inductor L2, can be improved. Furthermore, in the high-frequency module 100b, the isolation between the external terminal 79 of the transmitting filter 7 and the external terminal 89 of the receiving filter 8 can be improved.

[0142] (Implementation Method 3)

[0143] Reference Figure 15 and Figure 16 The high-frequency module 100a according to Embodiment 3 will be described below. Regarding the high-frequency module 100a according to Embodiment 3, compared with the high-frequency module 100 according to Modification 5 of Embodiment 1 (see...), Figure 9 The same structural elements are labeled with the same mark and the description is omitted.

[0144] The high-frequency module 100a according to Embodiment 3 differs from the high-frequency module 100 according to Modification 5 in that the substrate 70 of the transmitting filter 7 and the substrate 80 of the receiving filter 8 in the high-frequency module 100 according to Modification 5 of Embodiment 1 are shared by a single substrate 40 to form a duplexer 4. The substrate 40 has a first main surface 41 and a second main surface 42 facing each other in the thickness direction of the substrate 40. In the high-frequency module 100a according to Embodiment 3, the first main surface 41 of the substrate 40 is used instead of the first main surface 71 of the substrate 70 and the first main surface 81 of the substrate 80. In the high-frequency module 100a according to Embodiment 3, the duplexer 4 constitutes an electronic component 3 mounted on the main surface 91 of the mounting substrate 9. The electronic component 3 has a plurality of external terminals 30. The plurality of external terminals 30 includes a first RF terminal 31 and a second RF terminal 32. The first RF terminal 31 is composed of an external terminal 79. The second RF terminal 32 is composed of an external terminal 89. The conductive layer 6 is in contact with the upper surface 35 of the electronic component 3.

[0145] The high-frequency module 100a according to Embodiment 3 includes a mounting substrate 9, an electronic component 3, a resin layer 5, and a conductive layer 6. The mounting substrate 9 has a main surface 91. The electronic component 3 has a plurality of external terminals 30. The electronic component 3 is mounted to the main surface 91 of the mounting substrate 9 via the plurality of external terminals 30. The resin layer 5 is disposed on the main surface 91 of the mounting substrate 9, at least covering the outer peripheral surface 34 of the electronic component 3. The conductive layer 6 covers the resin layer 5, and when viewed from the thickness direction D1 of the mounting substrate 9, the conductive layer 6 overlaps with the electronic component 3. The plurality of external terminals 30 of the electronic component 3 include a first RF terminal 31 and a second RF terminal 32. The conductive layer 6 includes a first conductive portion 61 and a second conductive portion 62. When viewed from the thickness direction D1 of the mounting substrate 9, the first conductive portion 61 is located between the first RF terminal 31 and the second RF terminal 32. When viewed from the thickness direction D1 of the mounting substrate 9, the second conductive portion 62 is adjacent to the first conductive portion 61. The resistivity of the first conductive portion 61 is higher than that of the second conductive portion 62. Furthermore, in the high-frequency module 100a according to Embodiment 3, the first conductive part 61 has a single-layer structure, the thickness of the first conductive part 61 is the same as the thickness of the first layer 621 of the second conductive part 62, and the material of the first conductive part 61 is the same as the material of the first layer 621 of the second conductive part 62.

[0146] The high-frequency module 100a according to Embodiment 3 can improve the isolation. Here, the high-frequency module 100a according to Embodiment 3 can improve the isolation between the first RF terminal 31 and the second RF terminal 32 of the electronic component 3.

[0147] (Implementation Method 4)

[0148] Reference Figure 17 The high-frequency module 100a according to Embodiment 4 will be described below. For the high-frequency module 100a according to Embodiment 4, the same structural elements as those in the high-frequency module 100a according to Embodiment 3 will be marked with the same reference numerals and the description will be omitted.

[0149] In the high-frequency module 100a according to Embodiment 4, it differs from the high-frequency module 100a according to Embodiment 3 in the following aspects: the electronic component 3 is composed of a transmitting filter 7. In the electronic component 3, the first RF terminal 31 and the second RF terminal 32 are each composed of external terminals 79. The transmitting filter 7 constituting the electronic component 3 is a broadband filter that includes multiple communication frequency bands in its passband.

[0150] The high-frequency module 100a according to Embodiment 4 can improve the isolation. Here, the high-frequency module 100a according to Embodiment 3 can improve the isolation between the first RF terminal 31 and the second RF terminal 32 of the electronic component 3.

[0151] (Modification 1 of Implementation Method 4)

[0152] Below, refer to Figure 18 The high-frequency module 100a according to Variation 1 of Embodiment 4 will be described below. For the high-frequency module 100a according to Variation 1 of Embodiment 4, the same reference numerals are used for the same structural elements as those in the high-frequency module 100a according to Embodiment 4, and the description is omitted.

[0153] In the high-frequency module 100a according to Variation 1 of Embodiment 4, the length of the first conductive portion 61 in the direction where the first RF terminal 31 and the second RF terminal 32 are side by side when viewed from the thickness direction D1 of the mounting substrate 9 is longer than the length of the first conductive portion 61 in the high-frequency module 100a according to Embodiment 4. Therefore, compared to the high-frequency module 100a according to Embodiment 4, the high-frequency module 100a according to Variation 1 of Embodiment 4 can achieve a higher resistance in the first conductive portion 61. Therefore, in the high-frequency module 100a according to Variation 1 of Embodiment 4, a further improvement in the isolation between the first RF terminal 31 and the second RF terminal 32 of the electronic component 3 can be achieved.

[0154] (Modification 2 of Implementation Method 4)

[0155] Below, refer to Figure 19 The high-frequency module 100a according to Variation 2 of Embodiment 4 will be described below. For the high-frequency module 100a according to Variation 2 of Embodiment 4, the same structural elements as those in the high-frequency module 100a according to Embodiment 4 will be marked with the same reference numerals and the description will be omitted.

[0156] In the high-frequency module 100a according to Variation Example 2, the material of the first conductive part 61 is, for example, SUS. The material of the first conductive part 61 is not limited to SUS; it can also be, for example, Ti, Ni, or iron oxide. The first conductive part 61 is not limited to a single-layer structure; it can also be a multilayer structure, for example, a multilayer structure having an SUS layer and a Ni layer, or a multilayer structure having a Ti layer and a Ni layer. The second conductive part 62 can be a single-layer structure formed of a material with a lower resistivity than the first conductive part 61, or it can be the same as the high-frequency module 100a according to Embodiment 4 (see reference). Figure 17 Similarly, it has a stacked structure with a first layer 621, a second layer 622, and a third layer 623.

[0157] Below, based on Figure 21 Figures A through C in Figure 22 illustrate the first through sixth steps of the manufacturing method of the high-frequency module 100a involved in Modified Example 2.

[0158] In the first process, after mounting the electronic component 3 on the main surface 91 of the mounting substrate 9, a resin layer 5 is formed, and then the mounting substrate 9 is placed on the support substrate 200 (see reference). Figure 20 (A).

[0159] In the second process, a conductive film 620, which serves as the basis for the second conductive portion 62, is formed by sputtering, covering the main surface 51 and outer peripheral surface 53 of the resin layer 5 and the outer peripheral surface 93 of the mounting substrate 9. Figure 20 (B).

[0160] In the third step, a resist layer 210 with an opening is formed on the conductive film 620 using photolithography. This opening exposes a portion of the conductive film 620 formed in the area where the first conductive portion 61 is to be formed (see reference). Figure 20 (C).

[0161] In the fourth step, the resist layer 210 is used as a mask to etch away a portion of the conductive film 620, thereby exposing a portion of the main surface 51 of the resin layer 5 (see reference). Figure 21 (A). Thus, a second conductive portion 62 is formed, which is composed of the portion of the conductive film 620 remaining on the resin layer 5.

[0162] In the fifth process, the first conductive part 61 is formed by vapor deposition or the like (see reference). Figure 21 (B). In the fifth step, a useless film 610 of the same material as the first conductive part 61 is formed on the resist layer 210.

[0163] In the sixth process, the resist layer 210 and the useless film 610 are removed (see reference). Figure 21 (C). Thus, the high-frequency module 100a is formed. Then, the high-frequency module 100a can be separated from the support substrate 200.

[0164] (Other variations)

[0165] The above-described embodiments 1 to 4 are merely one of the various embodiments of the present invention. Regarding the above-described embodiments 1 to 4, any modification can be made as long as the objective of the present invention is achieved, depending on the design, etc., and different structural elements of different embodiments can be appropriately combined.

[0166] For example, the high-frequency module 100 according to embodiment 1 may also include a metal component (e.g., a metal wall) disposed on the first main surface 91 of the mounting substrate 9, located between the first electronic component 1 and the second electronic component 2, and connected to the ground layer of the mounting substrate 9.

[0167] The substrates for both the transmitting filter 7 and the receiving filter 8 can be piezoelectric substrates with a laminated structure comprising a silicon substrate, a low-velocity sound film, and a piezoelectric layer. The material of the piezoelectric layer is, for example, lithium niobate or lithium tantalate. The low-velocity sound film is a film in which the velocity of a bulk wave propagating in the low-velocity sound film is lower than the velocity of a bulk wave propagating in the piezoelectric layer. The material of the low-velocity sound film is, for example, silicon oxide, but is not limited to silicon oxide. In the silicon substrate, the velocity of a bulk wave propagating in the silicon substrate is higher than the velocity of an elastic wave propagating in the piezoelectric layer. Here, the bulk wave propagating in the silicon substrate is the bulk wave with the lowest velocity among the multiple bulk waves propagating in the silicon substrate.

[0168] Additionally, the piezoelectric substrate may also include a hypersonic film disposed between the silicon substrate and the low-velocity film. The hypersonic film is a film in which the velocity of a bulk wave propagating is higher than the velocity of an elastic wave propagating in the piezoelectric layer. The material of the hypersonic film is, for example, silicon nitride, but is not limited to silicon nitride; it may also be composed of at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, silicon carbide, silicon nitride, silicon oxynitride, silicon, sapphire, lithium tantalate, lithium niobate, quartz, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond.

[0169] For example, when the wavelength of the elastic wave, determined by the electrode finger period of the IDT electrode, is set to λ, the thickness of the piezoelectric layer is 3.5λ or less. The thickness of the low-velocity film is, for example, 2.0λ or less.

[0170] Furthermore, the filters in the transmitting filter 7 and the receiving filter 8 are not limited to surface acoustic wave (SAW) filters; for example, they can also be BAW (Bulk Acoustic Wave) filters. The resonators in the BAW filter are, for example, FBAR (Film Bulk Acoustic Resonator) or SMR (Solidly Mounted Resonator). The BAW filter has a substrate. The substrate is, for example, a silicon substrate.

[0171] In addition, the filters in the transmitting filter 7 and the receiving filter 8 are not limited to trapezoidal filters; for example, they can also be longitudinally coupled resonator type surface acoustic wave filters.

[0172] Furthermore, the elastic wave filter mentioned above is an elastic wave filter that utilizes surface acoustic waves or bulk acoustic waves, but it is not limited to these. For example, it can also be an elastic wave filter that utilizes boundary acoustic waves, plate waves, etc.

[0173] The circuit structure of high-frequency modules 100-100b is not limited to the examples described above. High-frequency module 100 may, for example, be a module capable of supporting carrier aggregation and dual connectivity. In addition, high-frequency modules 100-100b may, for example, have a high-frequency front-end circuit supporting MIMO (Multi-Input Multi-Output) as their circuit structure.

[0174] Alternatively, the communication device 300 according to Embodiment 1 may also include either high-frequency module 100a or 100b in place of high-frequency module 100.

[0175] (Way)

[0176] The following methods are disclosed in this specification.

[0177] The high-frequency module (100; 100b) according to the first method includes a mounting substrate (9), a first electronic component (1), a second electronic component (2), a resin layer (5), and a conductive layer (6). The mounting substrate (9) has a main surface (91). The first electronic component (1) has a plurality of first external terminals (10) including a first RF terminal (11). The first electronic component (1) is mounted on the main surface (91) of the mounting substrate (9) via the plurality of first external terminals (10). The second electronic component (2) has a plurality of second external terminals (20) including a second RF terminal (21). The second electronic component (2) is mounted on the main surface (91) of the mounting substrate (9) via the plurality of second external terminals (20). The resin layer (5) is disposed on the main surface (91) of the mounting substrate (9) and at least covers the outer peripheral surface (14) of the first electronic component (1) and the outer peripheral surface (24) of the second electronic component (2). A conductive layer (6) covers a resin layer (5) and, when viewed from the thickness direction (D1) of the mounting substrate (9), overlaps with the first electronic component (1) and the second electronic component (2). The conductive layer (6) includes a first conductive portion (61) and a second conductive portion (62). When viewed from the thickness direction (D1) of the mounting substrate (9), the first conductive portion (61) is located between the first RF terminal (11) and the second RF terminal (21). When viewed from the thickness direction (D1) of the mounting substrate (9), the second conductive portion (62) is adjacent to the first conductive portion (61). The resistivity of the first conductive portion (61) is higher than that of the second conductive portion (62).

[0178] The high-frequency modules (100; 100b) involved in the first method can achieve improved isolation.

[0179] The high-frequency module (100a) according to the second method includes a mounting substrate (9), an electronic component (3), a resin layer (5), and a conductive layer (6). The mounting substrate (9) has a main surface (91). The electronic component (3) has a plurality of external terminals (30). The electronic component (3) is mounted on the main surface (91) of the mounting substrate (9) via the plurality of external terminals (30). The resin layer (5) is disposed on the main surface (91) of the mounting substrate (9) and covers at least the outer peripheral surface (34) of the electronic component (3). The conductive layer (6) covers the resin layer (5) and overlaps with the electronic component (3) when viewed from the thickness direction (D1) of the mounting substrate (9). The plurality of external terminals (30) of the electronic component (3) include a first RF terminal (31) and a second RF terminal (32). The conductive layer (6) includes a first conductive portion (61) and a second conductive portion (62). When viewed from the thickness direction (D1) of the mounting substrate (9), the first conductive portion (61) is located between the first RF terminal (31) and the second RF terminal (32). When viewed from the thickness direction (D1) of the mounting substrate (9), the second conductive portion (62) is the portion other than the first conductive portion (61). The resistivity of the first conductive portion (61) is higher than that of the second conductive portion (62).

[0180] The high-frequency module (100a) involved in the second method can achieve improved isolation.

[0181] In the high-frequency module (100; 100b) involved in the third method, according to the first method, the conductive layer (6) is in contact with the upper surface (15) of the first electronic component (1) and the upper surface (25) of the second electronic component (2).

[0182] The high-frequency module (100; 100b) involved in the third method can achieve a low profile.

[0183] In the high-frequency module (100a) involved in the fourth method, according to the second method, the conductive layer (6) is in contact with the upper surface (35) of the electronic component (3).

[0184] In the high-frequency module (100) involved in the fifth method, according to the third method, the first electronic component (1) is a transmission system circuit component.

[0185] The high-frequency module (100) involved in the fifth method can suppress the temperature rise of the first electronic component (1), stabilize the temperature characteristics of the first electronic component (1), and stabilize the characteristics of the high-frequency module (100). In addition, the high-frequency module (100) involved in the fifth method can suppress the heat generated by the first electronic component (1) from being transferred to the second electronic component (2) through the conductive layer (6).

[0186] In the high-frequency module (100) involved in the sixth method, according to the fifth method, the first electronic component (1) is a transmitting filter (7) and the second electronic component (2) is a receiving filter (8).

[0187] In the high-frequency module (100) involved in the sixth method, the isolation between the transmitting filter (7) and the receiving filter (8) can be improved.

[0188] In the high-frequency module (100) involved in the seventh method, according to the sixth method, the first electronic component (1) and the second electronic component (2) are elastic wave filters, respectively.

[0189] In the high-frequency module (100b) involved in the eighth method, according to the first method, it also includes a transmitting filter (7) and a receiving filter (8). The first electronic component (1) is a first surface-mount electronic component (first inductor L1) connected to the transmitting filter (7), and the second electronic component (2) is a second surface-mount electronic component (second inductor L2) connected to the receiving filter (8).

[0190] The high-frequency module (100b) involved in the eighth method can improve the isolation between the first surface-mount electronic component (first inductor L1) and the second surface-mount electronic component (second inductor L2).

[0191] The high-frequency module (100; 100b) involved in the ninth method is based on any one of the first, third, and fifth to eighth methods. In the high-frequency module (100; 100b) involved in the ninth method, when viewed from the thickness direction (D1) of the mounting substrate (9), in a direction orthogonal to the direction in which the first RF terminal (11) and the second RF terminal (21) are parallel, the length (H61) of the first conductive part (61) is longer than the length (H1) of the first electronic component (1) and the length (H2) of the second electronic component (2).

[0192] The high-frequency module (100; 100b) involved in Method 9 can achieve improved isolation.

[0193] In the high-frequency module (100a) involved in the 10th method, the electronic component (3) is a duplexer (4) according to the 2nd or 4th method.

[0194] The high-frequency module (100a) involved in the 10th method can suppress the degradation of the characteristics of the duplexer (4).

[0195] In the high-frequency module (100; 100a; 100b) according to the 11th embodiment, the second conductive portion (62) includes a first SUS layer (first layer 621), a Cu layer (second layer 622) on the first SUS layer (first layer 621), and a second SUS layer (third layer 623) on the Cu layer (second layer 622). The resistivity of the first conductive portion (61) is higher than the resistivity of the Cu layer (second layer 622).

[0196] The high-frequency modules (100; 100a; 100b) involved in Method 11 can achieve improved reliability.

[0197] In the high-frequency module (100; 100a; 100b) according to the 12th embodiment, the second conductive portion (62) includes a first Ti layer (first layer 621), a Cu layer (second layer 622) on the first Ti layer (first layer 621), and a second Ti layer (third layer 623) on the Cu layer (second layer 622). The resistivity of the first conductive portion (61) is higher than the resistivity of the Cu layer (second layer 622).

[0198] The high-frequency modules (100; 100a; 100b) involved in Method 12 can achieve improved reliability.

[0199] The high-frequency module (100; 100b) according to the 13th method includes a mounting substrate (9), a first electronic component (1), a second electronic component (2), a resin layer (5), and a conductive layer (6). The mounting substrate (9) has a main surface (91). The first electronic component (1) has a plurality of first external terminals (10) including a first RF terminal (11). The first electronic component (1) is mounted on the main surface (91) of the mounting substrate (9) via the plurality of first external terminals (10). The second electronic component (2) has a plurality of second external terminals (20) including a second RF terminal (21). The second electronic component (2) is mounted on the main surface (91) of the mounting substrate (9) via the plurality of second external terminals (20). The resin layer (5) is disposed on the main surface (91) of the mounting substrate (9) and at least covers the outer peripheral surface (14) of the first electronic component (1) and the outer peripheral surface (24) of the second electronic component (2). A conductive layer (6) covers a resin layer (5) and overlaps with a first electronic component (1) and a second electronic component (2) when viewed from the thickness direction (D1) of the mounting substrate (9). The conductive layer (6) includes a first conductive portion (61) and a second conductive portion (62). When viewed from the thickness direction (D1) of the mounting substrate (9), the first conductive portion (61) is located between a first RF terminal (11) and a second RF terminal (21). When viewed from the thickness direction (D1) of the mounting substrate (9), the second conductive portion (62) is adjacent to the first conductive portion (61). The second conductive portion (62) has a first metal layer (62A) and a second metal layer (62B). The first metal layer (62A) contains a first metal material, and the second metal layer (62B) is formed on the first metal layer (62A) and contains a second metal material different from the first metal material. The first conductive portion (61) has an alloy portion containing the first metal material and the second metal material.

[0200] The high-frequency module (100; 100b) involved in Method 13 can achieve improved isolation.

[0201] In the high-frequency module (100; 100b) involved in the 14th method, according to the 13th method, the first metal material is Cu, and the second metal material is a material containing Fe, Cr and Ni.

[0202] In the high-frequency module (100; 110b) involved in the 15th method, according to the 13th method, the first metal material is Cu and the second metal material is Ti.

[0203] The communication device (300) involved in the 16th method includes: a high-frequency module (100; 100a; 100b) of any one of the 1st to 15th methods; and a signal processing circuit (301). The signal processing circuit (301) is connected to the high-frequency module (100; 100a; 100b).

[0204] The communication device (300) involved in the 16th method can achieve improved isolation.

[0205] Explanation of reference numerals in the attached figures

[0206] 1: First electronic component; 10: First external terminal; 11: First RF terminal; 14: Outer peripheral surface; 15: Top surface; 17: Power amplifier; 18: Low noise amplifier; 19: First matching element; 2: Second electronic component; 20: Second external terminal; 21: Second RF terminal; 24: Outer peripheral surface; 25: Top surface; 29: Second matching element; 3: Electronic component; 4: Duplexer; 40: Substrate; 41: First main surface; 42: Second main surface; 5: Resin layer; 51: Main surface; 53: Outer peripheral surface; 6: Conductive layer; 61: First conductive part; 62: Second conductive part; 62A: First metal layer; 62B: Second metal layer; 621: First layer (first SUS layer, first Ti layer); 622: Second layer (Cu layer); 623: Third layer (second SUS layer); 7: Transmit filter (transmit system circuit component) 70: Substrate; 71: First main surface; 72: Second main surface; 73: Wiring electrode; 74: Circuit section; 75: IDT electrode; 76: Spacer layer; 77: Housing component; 78: First space; 79: External terminal; 8: Receiver filter; 80: Substrate; 81: First main surface; 82: Second main surface; 83: Wiring electrode; 84: Circuit section; 85: IDT electrode; 86: Spacer layer; 87: Housing component; 88: Second space; 89: External terminal; 9: Mounting substrate; 91: First main surface; 92: Second main surface; 93: Outer peripheral surface; 100, 100a, 100b: High-frequency module; 300: Communication device; 301: Signal processing circuit; 302: RF signal processing circuit; 303: Baseband signal processing circuit; 310: Antenna; D1: Thickness direction; L1: First inductor; L2: Second inductor;

[0207] T0: Antenna terminal; T1: Transmit terminal (signal input terminal); T2: Receive terminal (signal output terminal); T5: Ground terminal.

Claims

1. A high-frequency module, comprising: The mounting substrate has a main surface; A first electronic component having a plurality of first external terminals including a first RF terminal, the first electronic component being mounted on the main surface of the mounting substrate via the plurality of first external terminals; A second electronic component having a plurality of second external terminals including a second RF terminal, the second electronic component being mounted on the main surface of the mounting substrate via the plurality of second external terminals; A resin layer disposed on the main surface of the mounting substrate, at least covering the outer peripheral surface of the first electronic component and the outer peripheral surface of the second electronic component; as well as A conductive layer, which covers the resin layer, overlaps with the first electronic component and the second electronic component when viewed from the thickness direction of the mounting substrate. The conductive layer includes: A first conductive portion, when viewed from above in the thickness direction, is located between the first RF terminal and the second RF terminal; and The second conductive portion, when viewed from above in the thickness direction, is adjacent to the first conductive portion. The resistivity of the first conductive part is higher than that of the second conductive part. The first electronic component is a transmitting filter, and the second electronic component is a receiving filter.

2. The high-frequency module according to claim 1, wherein, The conductive layer is in contact with the upper surface of the first electronic component and the upper surface of the second electronic component.

3. The high-frequency module according to claim 2, wherein, The first electronic component is a transmission system circuit component.

4. The high-frequency module according to claim 1, wherein, The first electronic component and the second electronic component are elastic wave filters, respectively.

5. The high-frequency module according to claim 1, further comprising: Transmit filter; and Receiver filter, The first electronic component is a surface-mount electronic component connected to the transmitting filter. The second electronic component is a surface-mount electronic component connected to the receiving filter.

6. The high-frequency module according to any one of claims 1 to 5, wherein, When viewed from above in the thickness direction, in a direction orthogonal to the direction in which the first RF terminal and the second RF terminal are parallel, the length of the first conductive portion is longer than the length of the first electronic component and the length of the second electronic component.

7. The high-frequency module according to any one of claims 1 to 5, wherein, The second conductive portion includes a first SUS layer, a Cu layer on the first SUS layer, and a second SUS layer on the Cu layer. The resistivity of the first conductive part is higher than that of the Cu layer.

8. The high-frequency module according to any one of claims 1 to 5, wherein, The second conductive portion includes a first Ti layer, a Cu layer on the first Ti layer, and a second Ti layer on the Cu layer. The resistivity of the first conductive part is higher than that of the Cu layer.

9. A high-frequency module, comprising: The mounting substrate has a main surface; An electronic component having a plurality of external terminals, the electronic component being mounted on the main surface of the mounting substrate via the plurality of external terminals; A resin layer disposed on the main surface of the mounting substrate, at least covering the outer peripheral surface of the electronic component; as well as A conductive layer, which covers the resin layer, overlaps with the electronic component when viewed from the thickness direction of the mounting substrate. The plurality of external terminals of the electronic component include a first RF terminal and a second RF terminal. The conductive layer includes: A first conductive portion, when viewed from above in the thickness direction, is located between the first RF terminal and the second RF terminal; and The second conductive portion, when viewed from above in the thickness direction, is adjacent to the first conductive portion. The resistivity of the first conductive part is higher than that of the second conductive part.

10. The high-frequency module according to claim 9, wherein, The conductive layer is in contact with the upper surface of the electronic component.

11. The high-frequency module according to claim 9 or 10, wherein, The electronic component is a duplexer.

12. The high-frequency module according to claim 9 or 10, wherein, The second conductive portion includes a first SUS layer, a Cu layer on the first SUS layer, and a second SUS layer on the Cu layer. The resistivity of the first conductive part is higher than that of the Cu layer.

13. The high-frequency module according to claim 9 or 10, wherein, The second conductive portion includes a first Ti layer, a Cu layer on the first Ti layer, and a second Ti layer on the Cu layer. The resistivity of the first conductive part is higher than that of the Cu layer.

14. A high-frequency module, comprising: The mounting substrate has a main surface; A first electronic component having a plurality of first external terminals including a first RF terminal, the first electronic component being mounted on the main surface of the mounting substrate via the plurality of first external terminals; A second electronic component having a plurality of second external terminals including a second RF terminal, the second electronic component being mounted on the main surface of the mounting substrate via the plurality of second external terminals; A resin layer disposed on the main surface of the mounting substrate, at least covering the outer peripheral surface of the first electronic component and the outer peripheral surface of the second electronic component; as well as A conductive layer, which covers the resin layer, overlaps with the first electronic component and the second electronic component when viewed from the thickness direction of the mounting substrate. The conductive layer includes: A first conductive portion, when viewed from above in the thickness direction, is located between the first RF terminal and the second RF terminal; and The second conductive portion, when viewed from above in the thickness direction, is adjacent to the first conductive portion. The second conductive part has: A first metal layer comprising a first metallic material; and A second metal layer, formed on the first metal layer, comprises a second metal material different from the first metal material. The first conductive portion has an alloy portion comprising the first metal material and the second metal material. The first electronic component is a transmitting filter, and the second electronic component is a receiving filter.

15. The high-frequency module according to claim 14, wherein, The first metallic material is Cu. The second metallic material is a material containing Fe, Cr and Ni.

16. The high-frequency module according to claim 14, wherein, The first metallic material is Cu. The second metallic material is Ti.

17. A communication device comprising: The high-frequency module according to any one of claims 1 to 16; and A signal processing circuit, which is connected to the high-frequency module.

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