Vcsel for high current low pulse width applications
CN116636101BActive Publication Date: 2026-07-10VIXAR INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- VIXAR INC
- Filing Date
- 2021-11-24
- Publication Date
- 2026-07-10
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Figure CN116636101B_ABST
Abstract
Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device including an anode, a cathode, and one or more curved apertures in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges through the curved aperture, the oxidation bridges allowing current to flow within the curved aperture, wherein, when a current signal is applied to the VCSEL, current between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.
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