A cleaning solution composition for wet removal of post-etch residue in advanced wafer manufacturing processes

Abstract

This invention relates to the field of organic cleaning compositions, specifically to a cleaning solution composition for wet removal of etching residues in advanced wafer manufacturing processes. The invention addresses the challenge of safely, healthily, and effectively cleaning plasma etching residues in the semiconductor industry, providing a safe and effective semi-aqueous cleaning solution composition. A mixed solvent system enhances wetting and compatibilization of residues on the wafer surface, increasing the solubility of organic matter in the composition and allowing for a reasonable etching rate of the metal oxide etching barrier layer. Using deionized water and sulfone-based or amide-based aprotic solvents as main components, it is suitable for post-etching cleaning solutions containing tungsten and alumina. A metal polishing agent removes the oxide layer and controls surface roughness. The corrosion inhibitor is a polyhydroxyphenolic compound containing ortho-hydroxyl groups. A metal chelating agent is used to capture metal ions that enter the cleaning solution during the cleaning process.

Description

Technical Field

[0001] This invention relates to the field of organic cleaning compositions, and in particular to a cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes. Background Technology

[0002] In the semiconductor industry, the size of electronic circuits and components in microelectronic devices, silicon chips, liquid crystal displays, MEMS (microelectromechanical systems), and printed circuit boards is rapidly decreasing, while their density is constantly increasing. As the thickness of the insulating layers between each circuit layer continues to decrease and feature sizes become smaller, integrated circuits need to be interconnected through layering or stacking. With the shrinking feature sizes, patterns become smaller, and device performance parameters become increasingly demanding and robust. The decreased fault tolerance inherent in the smaller feature sizes and interconnects themselves becomes a significant challenge.

[0003] Meanwhile, as residues become increasingly difficult to remove, substrate corrosion must be controlled to a low level. Therefore, the main direction for cleaning solution development is to effectively remove plasma etching and plasma ash residues while maintaining chemical compatibility with all exposed substrate materials. Conventional cleaning solutions typically corrode substrate metal layers (or metal films) during cleaning, such as aluminum, copper, aluminum-copper alloys, tungsten nitride, tungsten (W), cobalt (Co), titanium oxide, other metals, and metal nitrides, and may also etch dielectric materials. Furthermore, the level of substrate corrosion tolerated by integrated circuit device manufacturers decreases as device geometry shrinks.

[0004] Therefore, there is an urgent need for a microelectronic cleaning composition that can remove residues on semiconductor substrates and is non-corrosive to exposed substrate materials, metals or metal alloys (such as aluminum, aluminum / copper alloys, copper, titanium, tantalum, tungsten, cobalt), metal nitrides (such as titanium nitride and tungsten nitride), and metal oxides. The introduction of metal corrosion inhibitors plays a crucial role in this process.

[0005] US10170296 indicates that the formulated chemicals used in its cleaning processes mainly include: sulfonic acids: methanesulfonic acid, dodecylbenzenesulfonic acid; corrosion inhibitors: imidazoline dione; aprotic solvents: dimethyl sulfoxide, sulfolane, N,N-dimethylacetamide, N,N-dimethylformamide; ethylene glycol ether solvents: n-butyl glycidyl ether; water and oxidants (H2O2); organic acids: citric acid, malic acid, hydroxyethylidene diphosphonic acid, etc.

[0006] The imidazoline dione corrosion inhibitors contained within can form a protective film on the metal surface beneath the Via, thereby reducing substrate corrosion. The composite solvent system of amide and sulfone solvents is beneficial for improving residue removal efficiency. The addition of sulfonic acid materials aims to coordinate sulfonic acid with titanium (IV) and utilize balance shift to increase the etching rate. Aromatic or aliphatic sulfonic acids can be used to adjust the pH value and control a lower W etching rate. The purpose is to control a suitable TiN etching rate.

[0007] US7919445B2 indicates that the formulation chemicals used for cleaning mainly include: organic acids: citric acid, maleic acid, tartaric acid, malonic acid, succinic acid, glutaric acid; oxidants: hydrogen peroxide, ammonium persulfate; solvents: N-methylpyrrolidone (NMP), ethylene glycol, propylene glycol, dimethyl sulfoxide (DMSO), 1-methoxy-2-propyl acetate (PGMEA); surfactants: heptanoic acid, octanoic acid, dodecylbenzenesulfonic acid, etc.; corrosion inhibitors: imidazoline compounds.

[0008] The imidazoline corrosion inhibitors contained within can form a protective film on the metal surface beneath the Via, thereby reducing substrate corrosion. The aprotic solvent system is beneficial for improving residue removal efficiency. The addition of sulfonic acid materials aims to coordinate sulfonic acid with titanium (IV) and utilize balance shift to increase the etching rate. Aromatic or aliphatic sulfonic acids can be used to adjust the pH value and control a lower W etching rate. The purpose is to control a suitable TiN etching rate.

[0009] US patent 10533146 shows that its formulated chemicals for advanced process cleaning mainly include: water, hydroxylamine sulfate, organic bases (amines or quaternary ammonium salts), organic acids (citric acid or malic acid), amino acids (histidine or arginine), and metal additives. Hydroxylamine sulfate acts as a redox agent, the organic acid as a first chelating agent, the amino acid as a second chelating agent, the nitrogen-containing organic compound as a metal corrosion inhibitor, and the organic base as a pH adjuster and conductivity increaser to pH 7-11. The composition can reduce the cleaning of plasma etching residues to a level of complete cleanliness, while also acting as a conductivity enhancer to reduce Co loss or corrosion during the cleaning process, thus acting as a Co corrosion inhibitor. The metal additives are used to reduce the etching rate of the cleaning composition on the exposed substrate metal.

[0010] US10702893 indicates that its formulated chemicals for advanced process cleaning mainly include: the redox agent hydroxylamine, water-soluble organic solvents (such as water-soluble alcohols, ketones, esters, sulfones, and ethers), metal-containing additives, and cyclic amine compounds. The water-soluble organic solvents, combined with water, form a composite solvent system that enhances wetting and solubilization of residues and organic matter. The redox agent helps dissolve residues on semiconductor surfaces, and the metal-containing additives reduce the corrosion of exposed metals (such as cobalt) by the composition. Cyclic amines are readily soluble in organic solvents, and their introduction acts as a metal corrosion inhibitor, working in conjunction with the metal-containing additives to protect the substrate metal, which is susceptible to corrosion during the cleaning process.

[0011] While these known products or patents can effectively decompose plasma etching residues, they also cause corrosion of the deposited metal and oxide patterns on the substrate. Although most corrosion inhibitors are essential for preventing corrosion of the substrate metal layer, most still tend to hinder the removal of plasma etching residues. Therefore, it is crucial to add appropriate corrosion inhibitors to achieve a balance between removal capability and inhibition of substrate metal corrosion. Summary of the Invention

[0012] (a) Technical problems to be solved

[0013] The technical problem to be solved by this invention is: how to safely, healthily and effectively clean plasma etching residues in the semiconductor industry, and achieve a balance between removal capacity and inhibition of substrate metal corrosion.

[0014] (II) Technical Solution

[0015] To address the aforementioned problems, this invention provides a cleaning solution composition for wet removal of etching residues in advanced wafer manufacturing processes, the operation steps of which are as follows:

[0016] Weigh out 50-60 parts by weight of deionized water, 30-50 parts by weight of sulfone-based or amide-based aprotic solvents, 0.1-1 parts by weight of metal polishing agent, 0.1-1 parts by weight of corrosion inhibitor, 1-3 parts by weight of metal chelating agent, and 1-3 parts by weight of organic polyphosphonic acid. Heat the solution to 65-85°C and stir for 30-80 minutes to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0017] A further improvement is that the sulfone-based aprotic solvent or amide-based aprotic solvent is a cyclic amide or an aliphatic chain amide.

[0018] A further improvement is that the sulfone-based or amide-based aprotic solvent is preferably one or two of N,N-dimethylformamide, N,N-diethylacetamide, N-formylmorpholine, N-methyl-2-pyrrolidone, sulfolane, dimethyl sulfoxide, hexamethylphosphoric triamine, and 1,3-dimethyl-2-imidazolinone.

[0019] A further improvement is that the corrosion inhibitor is a benzotriazole class, a high molecular weight surfactant, or a polyhydroxyphenolic compound containing an ortho-hydroxyl group.

[0020] A further improvement is that the corrosion inhibitor is preferably one or two of pyrogallol, gallic acid, and catechol; further, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0021] S1: By weight, 10-20 parts of 1-aminobenzotriazole, 20-40 parts of 3,5-dihydroxyphenol methacrylate, 200-300 parts of DMF, and 2-5 parts of tetramethylguanidine are stirred at 60-80℃ for 30-80 minutes to obtain additive A.

[0022] S2: By weight, 2-5 parts of aminothiourea, 0.3-1.4 parts of acrylic-cage-shaped polysilsesquioxane, 0.2-1.7 parts of nickel acrylate, 50-80 parts of DMF, and 0.5-2.5 parts of tetramethylguanidine are stirred at 60-80℃ for 50-100 min to obtain additive B.

[0023] S3: Mix product A and product B, stir at 60-80℃ for 50-100 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0024] A further improvement is that the metal polishing agent is selected from organic carboxylic acids, sulfinic acids, aromatic acids, organic phosphoric acids, fluorides, etc., which can dissolve the metal oxide layer.

[0025] A further improvement is that the metal polishing agent is preferably one or two of acetic acid, citric acid, oxalic acid, tartaric acid, succinic acid, malic acid, DDBSA, salicylic acid, HEDP, HF, and fluorinated amines.

[0026] A further improvement is that the metal chelating agent of the carboxylic acid type includes aminocarboxylic acids.

[0027] A further improvement is that the metal chelating agent is preferably one or two of EDTA, NTA, and DPTA.

[0028] A further improvement is that the organic polyphosphonic acid type includes one or two of HEDP, ATMP, and DTPMPA.

[0029] (III) Technical Mechanism

[0030] The nickel-based corrosion inhibitor of this invention is a multifunctional compound. Additive A is prepared by an addition reaction of 1-aminobenzotriazole and 3,5-dihydroxyphenol methacrylate; Additive B is prepared by an addition reaction of aminothiourea, acrylate-cage-like polysilsesquioxane, and nickel acrylate. It contains multiple functional groups, including silsesquioxane, benzotriazole, thiourea, and carboxylated nickel. These functional groups can form a composite film with the metal surface, thereby preventing further corrosion of the metal, while not hindering the removal of plasma etching residues. The specific reaction mechanism is as follows:

[0031] (1) The siloxane bonds in silsesquioxane can form chemical bonds with the metal surface, forming a barrier layer, thereby cutting off the contact between the metal surface and the external environment;

[0032] (2) The nitrogen-oxygen bonds in benzotriazole can coordinate with cations on the metal surface to form stable complexes, thereby enhancing the stability of the composite film.

[0033] (3) The sulfur-nitrogen bonds in thiourea can react chemically with metal ions on the metal surface to form a sulfide layer, thereby enhancing the barrier effect of the composite membrane.

[0034] (4) The composite film formed can play the role of rust prevention, corrosion prevention and oxidation prevention, thereby effectively delaying the aging and damage of metal materials.

[0035] The reaction equation is as follows:

[0036] Silsesquioxane + M --> MO-Si

[0037] benzotriazole + M 2+ -->[M 2+ (-N)(-O)] +

[0038] Thiourea + M 2+ -->[M 2+ (-S)(-N)] +

[0039] Where M represents a metal ion.

[0040] In summary, this multifunctional compound corrosion inhibitor can form a composite film through various reaction mechanisms, thereby enhancing the stability and oxidation protection of metallic materials. Therefore, adding an appropriate corrosion inhibitor to achieve a balance between barrier effect and inhibition of substrate metal corrosion is crucial.

[0041] (iv) Beneficial effects

[0042] The present invention provides a cleaning solution composition for wet removal of etching residues in advanced wafer manufacturing processes. Compared with the prior art, the present invention has the following significant advantages:

[0043] 1. The formula of this invention has simple ingredients, good stability, and can prevent corrosion of tungsten metal contact hole metal during the cleaning process;

[0044] 2. The formulation of the present invention can be used to remove other organic and inorganic residues and polymer residues after etching and ashing from semiconductor substrates at relatively low temperatures with small corrosion effects (e.g., low metal etching rates), thus having little negative impact on the conductivity of subsequent applications in device interconnects;

[0045] 3. The formulation dispersion of the present invention has a simple preparation process, and the combined use of the pH adjuster and corrosion inhibitor can expand the cleaning operation window and improve the stability of the cleaning process. Detailed Implementation

[0046] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0047] Example 1

[0048] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0049] Weigh 50g of deionized water, 30g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.1g of metal polishing agent, 0.1g of corrosion inhibitor, 1g of metal chelating agent, and 1g of organic polyphosphonic acid. Heat to 65℃ and stir for 30min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0050] The sulfone-based or amide-based aprotic solvent is preferably N,N-dimethylformamide.

[0051] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0052] S1: 10g of 1-aminobenzotriazole, 20g of 3,5-dihydroxyphenol methacrylate, 200g of DMF, and 2g of tetramethylguanidine are stirred at 60℃ for 30min to obtain auxiliary agent A;

[0053] S2: Mix 2g of aminothiourea, 0.3g of acrylic-cage-shaped polysilsesquioxane, 0.2g of nickel acrylate, 50g of DMF, and 0.5g of tetramethylguanidine at 60°C for 50 minutes to obtain additive B;

[0054] S3: Mix product A and product B, stir at 60°C for 50 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0055] The metal polishing agent is preferably acetic acid.

[0056] The preferred metal chelating agent is EDTA.

[0057] The organic polyphosphonic acid type mentioned is HEDP.

[0058] Example 2

[0059] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0060] Weigh 54g of deionized water, 35g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.4g of metal polishing agent, 0.4g of corrosion inhibitor, 2g of metal chelating agent, and 2g of organic polyphosphonic acid. Heat to 70℃ and stir for 50min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0061] The sulfone-based or amide-based aprotic solvent is preferably N-formylmorpholine.

[0062] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0063] S1: 14g of 1-aminobenzotriazole, 25g of 3,5-dihydroxyphenol methacrylate, 240g of DMF, and 3g of tetramethylguanidine were stirred at 65℃ for 50min to obtain auxiliary agent A;

[0064] S2: Mix 3g of aminothiourea, 0.8g of acrylic-cage-shaped polysilsesquioxane, 0.8g of nickel acrylate, 60g of DMF, and 1g of tetramethylguanidine at 65°C for 70 minutes to obtain additive B.

[0065] S3: Mix product A and product B, stir at 65°C for 70 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0066] The metal polishing agent is preferably oxalic acid.

[0067] The metal chelating agent is preferably NTA.

[0068] The organic polyphosphonic acid type mentioned is ATMP.

[0069] Example 3

[0070] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0071] Weigh 58g of deionized water, 45g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.8g of metal polishing agent, 0.8g of corrosion inhibitor, 2g of metal chelating agent, and 2g of organic polyphosphonic acid. Heat to 80℃ and stir for 70min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0072] The preferred sulfone-based or amide-based aprotic solvent is sulfolane.

[0073] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0074] S1: 18g of 1-aminobenzotriazole, 35g of 3,5-dihydroxyphenol methacrylate, 280g of DMF, and 4g of tetramethylguanidine were stirred at 75℃ for 70min to obtain auxiliary agent A;

[0075] S2: 4g aminothiourea, 1.2g acrylic-cage polysilsesquioxane, 1.5g nickel acrylate, 70g DMF, and 2g tetramethylguanidine were stirred at 75°C for 90 minutes to obtain additive B.

[0076] S3: Mix product A and product B, stir at 75°C for 90 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0077] The metal polishing agent is preferably DDBSA.

[0078] The metal chelating agent is preferably NTA.

[0079] The organic polyphosphonic acid type mentioned is ATMP.

[0080] Example 4

[0081] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0082] Weigh 60g of deionized water, 50g of sulfone-based aprotic solvent or amide-based aprotic solvent, 1g of metal polishing agent, 1g of corrosion inhibitor, 3g of metal chelating agent, and 3g of organic polyphosphonic acid. Heat to 85℃ and stir for 80min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0083] The sulfone-based or amide-based aprotic solvent is preferably 1,3-dimethyl-2-imidazolinone.

[0084] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0085] S1: 20g of 1-aminobenzotriazole, 40g of 3,5-dihydroxyphenol methacrylate, 300g of DMF, and 5g of tetramethylguanidine are stirred at 80℃ for 80min to obtain auxiliary agent A;

[0086] S2: Mix 5g aminothiourea, 1.4g acrylic-cage-shaped polysilsesquioxane, 1.7g nickel acrylate, 80g DMF, and 2.5g tetramethylguanidine at 80℃ for 100min to obtain additive B;

[0087] S3: Mix product A and product B, stir at 80°C for 100 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0088] The metal polishing agent is preferably a fluorinated amine.

[0089] The preferred metal chelating agent is DPTA.

[0090] The organic polyphosphonic acid type mentioned is DTPMPA.

[0091] Comparative Example 1

[0092] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0093] Weigh 50g of deionized water, 30g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.1g of metal polishing agent, 1g of metal chelating agent, and 1g of organic polyphosphonic acid. Heat to 65℃ and stir for 30min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0094] The sulfone-based or amide-based aprotic solvent is preferably N,N-dimethylformamide.

[0095] The metal polishing agent is preferably acetic acid.

[0096] The preferred metal chelating agent is EDTA.

[0097] The organic polyphosphonic acid type mentioned is HEDP.

[0098] Comparative Example 2

[0099] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0100] Weigh 50g of deionized water, 30g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.1g of metal polishing agent, 0.1g of corrosion inhibitor, 1g of metal chelating agent, and 1g of organic polyphosphonic acid. Heat to 65℃ and stir for 30min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0101] The sulfone-based or amide-based aprotic solvent is preferably N,N-dimethylformamide.

[0102] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0103] S1: 10g of 1-aminobenzotriazole, 20g of 3,5-dihydroxyphenol methacrylate, 200g of DMF, and 2g of tetramethylguanidine are stirred at 60℃ for 30min to obtain auxiliary agent A;

[0104] S2: 0.3g of acrylic-cage-shaped polysilsesquioxane, 0.2g of nickel acrylate, 50g of DMF, and 0.5g of tetramethylguanidine are stirred at 60℃ for 50min to obtain additive B;

[0105] S3: Mix product A and product B, stir at 60°C for 50 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0106] The metal polishing agent is preferably acetic acid.

[0107] The preferred metal chelating agent is EDTA.

[0108] The organic polyphosphonic acid type mentioned is HEDP.

[0109] Comparative Example 3

[0110] A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps:

[0111] Weigh 50g of deionized water, 30g of sulfone-based aprotic solvent or amide-based aprotic solvent, 0.1g of metal polishing agent, 0.1g of corrosion inhibitor, 1g of metal chelating agent, and 1g of organic polyphosphonic acid. Heat to 65℃ and stir for 30min to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes.

[0112] The sulfone-based or amide-based aprotic solvent is preferably N,N-dimethylformamide.

[0113] Furthermore, a nickel-based corrosion inhibitor is provided, the preparation method of which is as follows:

[0114] S1: 10g of 1-aminobenzotriazole, 20g of 3,5-dihydroxyphenol methacrylate, 200g of DMF, and 2g of tetramethylguanidine are stirred at 60℃ for 30min to obtain auxiliary agent A;

[0115] S2: Mix 2g of aminothiourea, 0.2g of nickel acrylate, 50g of DMF, and 0.5g of tetramethylguanidine at 60°C for 50 minutes to obtain additive B;

[0116] S3: Mix product A and product B, stir at 60°C for 50 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor.

[0117] The metal polishing agent is preferably acetic acid.

[0118] The preferred metal chelating agent is EDTA.

[0119] The organic polyphosphonic acid type mentioned is HEDP.

[0120] The specific implementation plan outlines the cleaning steps and detection methods for metal contaminants as follows:

[0121] (1) Immerse the wafer in the cleaning solution for 5 minutes;

[0122] (2) Set the cleaning fluid temperature to 70℃, the ultrasonic vibration frequency to 80kHz, and the cleaning fluid flow rate to 200m / h for cleaning, and the cleaning time to 10min.

[0123] (3) In a deionized water bath with the same temperature as the cleaning temperature, ultrasonically vibrate for 10 minutes;

[0124] (4) Dry at 105℃ for 2 hours before testing;

[0125] (5) The content of metal contaminants on the surface of wafer semiconductor materials was tested using the XPS method.

[0126]

[0127]

[0128] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A cleaning solution component for wet removal of etching residues in advanced wafer manufacturing processes, comprising the following steps: Weigh out 50-60 parts by weight of deionized water, 30-50 parts by weight of sulfone-based or amide-based aprotic solvents, 0.1-1 parts by weight of metal polishing agent, 0.1-1 parts by weight of corrosion inhibitor, 1-3 parts by weight of metal chelating agent, and 1-3 parts by weight of organic polyphosphonic acid. Heat to 65-85℃ and stir for 30-80 minutes to obtain a cleaning solution for wet removal of etching residues in advanced wafer manufacturing processes. The corrosion inhibitor is a nickel-based corrosion inhibitor, and its preparation method is as follows: S1: By weight, 10-20 parts of 1-aminobenzotriazole, 20-40 parts of 3,5-dihydroxyphenol methacrylate, 200-300 parts of DMF, and 2-5 parts of tetramethylguanidine are stirred at 60-80℃ for 30-80 minutes to obtain additive A. S2: By weight, 2-5 parts of aminothiourea, 0.3-1.4 parts of acrylic-cage-shaped polysilsesquioxane, 0.2-1.7 parts of nickel acrylate, 50-80 parts of DMF, and 0.5-2.5 parts of tetramethylguanidine are stirred at 60-80℃ for 50-100 min to obtain additive B. S3: Mix product A and product B, stir at 60-80℃ for 50-100 min, and remove DMF by distillation to obtain nickel-based corrosion inhibitor; The metal chelating agent is one or two of EDTA, NTA, and DPTA; The organic polyphosphonic acid is one or two of HEDP, ATMP, and DTPMPA.

2. The cleaning solution composition for wet removal of etching residues in advanced wafer manufacturing processes according to claim 1, characterized in that: The sulfone aprotic solvent is at least one of sulfolane and dimethyl sulfoxide; the amide aprotic solvent is one or two of N,N-dimethylformamide, N,N-diethylacetamide, N-formylmorpholine, N-methyl-2-pyrrolidone, hexamethylphosphoric triamine, and 1,3-dimethyl-2-imidazolinone.

3. The cleaning solution composition for wet removal of etching residues in advanced wafer manufacturing processes according to claim 1, characterized in that: The metal polishing agent is one or two of the following: acetic acid, citric acid, oxalic acid, tartaric acid, succinic acid, malic acid, DDBSA, salicylic acid, HEDP, HF, and fluorinated amine.

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