Power semiconductor device

Abstract

A power semiconductor device of the present application includes: a circuit body having a pair of conductor portions and a power semiconductor element sandwiched between the pair of conductor portions; a substrate formed with a through-hole; and a sealing material sealing at least a portion of each of the circuit body and the substrate, the circuit body being inserted into the through-hole and having a first exposed surface and a second exposed surface exposed from the sealing material, the substrate having, within the through-hole, a first protruding portion and a second protruding portion protruding toward a center of the through-hole and connected to the circuit body, the first protruding portion and the second protruding portion being formed at positions opposite to each other within the through-hole, at least one of the first protruding portion and the second protruding portion being a terminal that transmits power to the power semiconductor element.

Description

Technical Field

[0001] This invention relates to power semiconductor devices. Background Technology

[0002] In power semiconductor devices that integrate motors and inverters, the requirements for miniaturization and height reduction in the manufacturing process are becoming increasingly stringent. Therefore, technologies are constantly being improved to meet these requirements and achieve devices with high productivity.

[0003] As background technology for this invention application, the following technology is disclosed in Patent Document 1: inserting the heat-conducting part of the extender (lead) into the through hole of the substrate and connecting the protrusion of the extender to the surface of the substrate, thereby making the thickness of the solder layer as constant as possible, so as to stabilize the amount of the conductive part protruding from the opposite side of the substrate.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent No. 5445562 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] In the structure of Patent Document 1, wiring needs to be routed on the surface, bypassing the wiring inside the substrate, which results in wiring extension and increased inductance. In view of the above, the object of the present invention is to provide a power semiconductor device that balances low wiring inductance and improved positioning of the lead package and substrate.

[0009] Technical solutions to solve technical problems

[0010] The power semiconductor device of the present invention includes: a circuit body having a pair of conductor portions and a power semiconductor element sandwiched between the pair of conductor portions; a substrate having a through-hole; and a sealing material sealing at least a portion of the circuit body and the substrate, the circuit body being inserted into the through-hole and having a first exposed surface and a second exposed surface exposed from the sealing material, the substrate having a first protrusion and a second protrusion protruding toward the center of the through-hole and connected to the circuit body within the through-hole, the first protrusion and the second protrusion being formed at positions opposite to each other within the through-hole, at least one of the first protrusion and the second protrusion being a terminal for transmitting power to the power semiconductor element.

[0011] Invention Effects

[0012] According to the present invention, a power semiconductor device can be provided that achieves both low inductance of wiring and improved positioning of lead package and substrate. Attached Figure Description

[0013] Figure 1 It is a 3D view of the entire inverter.

[0014] Figure 2 This is a 3D view of the inverter after its cover has been removed.

[0015] Figure 3 It is a three-dimensional cut view of the AA section after the inverter cover is released.

[0016] Figure 4 yes Figure 3 A sectional view.

[0017] Figure 5 This is an expanded diagram of the main circuit unit and cooling water circuit.

[0018] Figure 6 This is a 3D diagram of the main circuit unit.

[0019] Figure 7 This is a 3D view with the sealing resin of the main circuit unit omitted.

[0020] Figure 8 This is a cut perspective view of one embodiment of the present invention, with the sealing resin of the main circuit unit omitted.

[0021] Figure 9 This is an unfolded perspective view of a wire package according to one embodiment of the present invention.

[0022] Figure 10 yes Figure 8 CC section view.

[0023] Figure 11 yes Figure 6 BB cross-sectional view.

[0024] Figure 12 This is an embodiment of the present invention, illustrating the transient current of a switch. Figure 6 BB cross-sectional view.

[0025] Figure 13 This is the circuit diagram of an inverter. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The following description and drawings are examples for illustrating the present invention, and appropriate omissions and simplifications have been made for clarity. The present invention may also be implemented in various other forms. Unless otherwise specified, each structural element may be single or multiple.

[0027] To facilitate understanding of the present invention, the positions, dimensions, shapes, and extents of the constituent elements shown in the accompanying drawings may not represent their actual positions, dimensions, shapes, or extents. Therefore, the present invention is not necessarily limited to the positions, dimensions, shapes, and extents disclosed in the accompanying drawings.

[0028] (One implementation method and overall structure)

[0029] Figure 1 It is a 3D view of the entire inverter.

[0030] In inverter 100, the cooling water circuit and structural components are built into the housing 1 and sealed by the cover 2. AC connector 3 and DC connector 4 protrude from the housing 1 to the outside, and further output signal connector 5.

[0031] Figure 2 This is a 3D view of the inverter after its cover has been removed. (AA dashed line is in...) Figure 3 and Figure 4 Used in.

[0032] The inverter 100 housing contains a motor control board 6, a gate drive board 7, a smoothing capacitor 8, an EMC filter 9, a cooling water circuit 10, a main circuit unit 11, and a printed circuit board main circuit 25 (see reference). Figure 6 The motor control board 6 is mounted on... Figure 2 Above, covering the gate drive substrate 7, cooling water channel 10, and main circuit unit 11. A signal connector 5 is mounted on the motor control substrate 6, penetrating the cover 2. Figure 1 And output it to the outside.

[0033] Figure 3 This is a three-dimensional cut view of the AA section of the inverter after the cover has been released. Figure 4 yes Figure 2 AA sectional view.

[0034] The gate drive substrate 7 is equipped with a substrate bonding pin 12, which is electrically connected to the substrate bonding through-hole of the main circuit unit 11 via a bonding material such as solder (see reference). Figure 6 ). Figure 4 From this, it can be seen that the main circuit unit 11 is sandwiched between the cooling water circuits 10.

[0035] Figure 5 This is an expanded diagram of the main circuit unit and cooling water circuit.

[0036] The main circuit unit 11 is clamped and fixed by the cooling water channel 10. Through this structure, the cooling water channel 10 cools the power semiconductor components mounted on multiple lead packages and the main circuit wiring within the main circuit unit 11.

[0037] Figure 6This is a 3D diagram of the main circuit unit. Figure 7 This is a 3D view with the sealing resin of the main circuit unit omitted.

[0038] The main circuit unit 11 has multiple lead packages 26 mounted on the main circuit 25 of the printed circuit board, which are molded as a whole by sealing resin 13. The main circuit 25 of the printed circuit board has AC connection portion 20 and DC connection portion 21, which are electrically connected to AC busbar and DC busbar (not shown) respectively by screw fastening.

[0039] In addition, substrate bonding vias 22 and capacitor bonding vias 23 are provided to facilitate gate driving of the substrate and smoothing of the capacitor (see reference). Figure 2 and Figure 3 Electrical connections are made on the main circuit 25 of the printed circuit board using solder or other bonding materials. This is to allow for... Figure 5 The cooling water circuit described herein is connected by a fixing hole 24.

[0040] Figure 8 This is a cut perspective view of one embodiment of the present invention, omitting the sealing resin of the main circuit unit. The CC dashed line is... Figure 10 Used in.

[0041] The leaded packages 26, namely diode leaded packages 26D and IGBT leaded packages 26T, are inserted into through holes 27 formed on the main circuit of the printed circuit board 25. Their respective connection terminals are connected to corresponding portions of the main circuit of the printed circuit board 25 via solder or the like (later in...). Figure 10 (As explained in the text) make electrical connections.

[0042] The first lead frame 32 and the second lead frame 33 of the lead package 26 (common in the IGBT lead package 26T and the diode lead package 26D) are electrically bonded in such a way that they clamp the electrodes on both sides of the IGBT or diode element.

[0043] The first connecting portion 30, located in the first lead frame 32, is electrically connected to the first and second protrusions (described later) located inside the through hole 27. The second connecting portion 31, located in the second lead frame 33, is connected to the surface wiring of the main circuit 25 of the printed circuit board to form the main circuit wiring. The sunbber condenser 40 is connected to the positive and negative wiring (described later) located on the main circuit 25 of the printed circuit board to provide transient current during switching.

[0044] Figure 9 This is an unfolded perspective view of a wire package according to one embodiment of the present invention.

[0045] Figure 9The diode leaded package 26D and IGBT leaded package 26T are viewed from the inside of the paper respectively. Figure 8 The diagram shows the result of unfolding the diode lead package 26D and the IGBT lead package 26T.

[0046] In diode lead package 26D, diode 36 is sandwiched between first lead frame 32 and second lead frame 33. In IGBT lead package 26T, IGBT 35 is sandwiched between first lead frame 32 and second lead frame 33. In the first lead frame 32, a first connection portion 30 is disposed opposite to both ends of the first lead frame 32. A second connection portion 31 faces... Figure 9 The protruding shape on the lower side is set on the second lead frame 33.

[0047] A base electrode 34 is provided on the first lead frame 32 in the diode lead package 26D and on the second lead frame 33 in the IGBT lead package 26T. The base electrode 34 is used to connect to the surface electrode while maintaining an insulating distance from the surface electrode of the element sandwiched between the first lead frame 32 and the second lead frame 33.

[0048] Figure 10 yes Figure 8 CC section view.

[0049] The circuit body is formed by a pair of conductors, namely the first lead frame 32 and the second lead frame 33, and a power semiconductor element, namely an IGBT 35 or a diode 36, sandwiched between them. In the main circuit 25 of the printed circuit board, the first protrusion 28 and the second protrusion 29 protrude toward the center of the through hole 27 into which each circuit body is inserted, and are respectively formed at positions opposite to each other within the through hole 27. Furthermore, the second protrusion 29 is a terminal electrically connected to the DC positive wiring 62 and the DC negative wiring 63.

[0050] The first connecting portion 30 of the first lead frame 32, and the first protrusion 28 and the second protrusion 29 within the through hole 27 are electrically connected by solder or the like. Furthermore, the second connecting portion 31 of the second lead frame 33 and the substrate surface wiring 50 are electrically connected by solder or the like. Additionally, the signal pads (not shown) of the IGBT 35 are electrically connected to the signal wiring formed on the surface of the main circuit 25 of the printed circuit board via wire bonding or the like.

[0051] Figure 11 yes Figure 6 BB cross-sectional view.

[0052] Figure 10In this process, after the wire package 26 is connected to the main circuit 25 of the printed circuit board, the wire package 26 and the main circuit 25 of the printed circuit board are completely covered and fixed by the sealing resin 13. At this time, each solder joint is fixed by the sealing resin 13, and the resistance to fatigue damage such as cracks is ensured. Alternatively, the sealing resin 13 can be omitted, and the circuit body can be fixed by clamping from the upper and lower components, screw locking, etc., while it is set on the substrate. Thus, the molding process of the sealing resin 13 can be omitted.

[0053] After sealing with sealing resin 13, heat dissipation surfaces, namely the first exposed surface 51 and the second exposed surface 52, of each lead frame 32 and 33 are formed on the surface of sealing resin 13. The heat generated by the IGBT and diode is dissipated to the cooling water channel through the insulating layer from the first exposed surface 51 and the second exposed surface 52.

[0054] By connecting to this structure, the tilt of the lead package 26 during setup, which is the cause of chip damage and resin coverage on the heat dissipation surface during transfer molding of the circuit body and the substrate as a whole, is improved to enhance positioning. Furthermore, the connection between the protrusion provided on the substrate and the lead frame shortens the wiring length, thereby achieving low inductance.

[0055] Figure 12 This is an embodiment of the present invention, illustrating the transient current of a switch. Figure 6 BB cross-sectional view.

[0056] During switching, from the buffer capacitor 40 ( Figure 12 (Not shown) A transient current 65 is provided, which flows from the DC positive wiring 62 on the main circuit 25 of the printed circuit board via the second protrusion 29, and via the lead packages 26D and 26T of the upper and lower arm circuits and the AC wiring 64, toward the DC negative wiring 63 connected to another second protrusion in a loop.

[0057] Here, as Figure 10 As shown, the second lead frame 33, which forms part of the circuit body, and the second protrusion 29 formed in the through hole 27 are formed at opposite positions sandwiching the main circuit 25 of the printed circuit board. Furthermore, the AC wiring 64 built into the substrate and the second protrusion 29 are arranged opposite each other inside the substrate. This arrangement creates a structure that forms current paths that are opposite to each other, thereby canceling out magnetic fields and reducing the impact of noise.

[0058] Figure 13 This is the circuit diagram (equivalent circuit) of an inverter.

[0059] The equivalent circuit diagram shows the path of the transient current 65 during switching provided by the buffer capacitor 40.

[0060] According to one embodiment of the present invention described above, the following effects are achieved.

[0061] (1) The power semiconductor device, i.e., the main circuit unit 11, includes: a circuit body having a pair of conductor portions, namely a first lead frame 32 and a second lead frame 33, and a power semiconductor element (IGBT 35, diode 36) sandwiched between the first lead frame 32 and the second lead frame 33; a printed circuit board main circuit 25 having a through-hole 27; and a sealing resin 13 sealing at least a portion of each of the circuit body and the printed circuit board main circuit 25. The circuit body is inserted into the through-hole 27 and has a first exposed surface 51 and a second exposed surface 52 exposed from the sealing resin 13. The printed circuit board main circuit 25 has a first protrusion 28 and a second protrusion 29 protruding toward the center of the through-hole 27 and connected to the circuit body within the through-hole 27. The first protrusion 28 and the second protrusion 29 are formed at positions opposite to each other within the through-hole 27, and at least one of the first protrusion 28 and the second protrusion 29 is a terminal for transmitting power to the power semiconductor element. Therefore, a power semiconductor device can be provided that balances low wiring inductance and improved positioning of lead package and substrate.

[0062] (2) The second lead frame 33 and the second protrusion 29 formed in the through hole 27 are formed in opposite positions that sandwich the main circuit 25 of the printed circuit board in the middle. Thus, the magnetic field generated by the reverse current path is canceled out, which can reduce the influence of noise.

[0063] (3) The AC wiring 64 and the second protrusion 29, which are built into the main circuit of the printed circuit board 25, are arranged opposite to each other within the main circuit of the printed circuit board 25. As a result, the influence of noise can be reduced.

[0064] (4) The power semiconductor device, i.e., the main circuit unit 11, includes: a circuit body having a pair of conductor portions, namely a first lead frame 32 and a second lead frame 33, and a power semiconductor element (IGBT 35, diode 36) sandwiched between the first lead frame 32 and the second lead frame 33; and a printed circuit board main circuit 25 having a through hole 27, which may not have a sealing resin 13. In this case, the circuit body is also inserted into the through hole 27, and the printed circuit board main circuit 25 has a first protrusion 28 and a second protrusion 29 protruding toward the center of the through hole 27 and connected to the circuit body. The first protrusion 28 and the second protrusion 29 are formed at positions opposite to each other within the through hole 27, and at least one of the first protrusion 28 and the second protrusion 29 is a terminal for transmitting power to the power semiconductor element. Thus, a power semiconductor device with improved positioning without the need for a sealing resin can be provided.

[0065] Furthermore, the present invention is not limited to the embodiments described above, and various modifications or combinations of other structures can be made without departing from its spirit. Additionally, the present invention is not limited to having all the structures described in the above embodiments, but also includes structures obtained by deleting a portion of the structure.

[0066] Label Explanation

[0067] 1. Shell

[0068] 2. Cover

[0069] 3 AC connectors

[0070] 4 DC connectors

[0071] 5 signal connectors

[0072] 6. Motor control board; 7. Gate drive board; 8. Smoothing capacitor

[0073] 9EMC filter

[0074] 10 Cooling Water Circuit

[0075] 11 Main Circuit Unit

[0076] 12 substrate bonding pins

[0077] 13 Sealing Resin

[0078] 20. Communication Connection Department

[0079] 21 DC Connection Section

[0080] 22 Substrate bonding through-hole 23 Capacitor bonding through-hole 24 Fixing hole

[0081] 25 Printed Circuit Board Main Circuit 26 Wire Package

[0082] 26D diode leaded package, 26T IGBT leaded package, 27 through-hole.

[0083] 28 First protrusion

[0084] 29 Second salient

[0085] 30 First connecting part

[0086] 31 Second connecting part

[0087] 32 First lead frame

[0088] 33 Second lead frame

[0089] 34 base electrode

[0090] 35 IGBT

[0091] 36 diodes

[0092] 40 Buffer Diode (sunbber condenser)

[0093] 41 IGBT components

[0094] 42 Diode Components

[0095] 50 substrate surface wiring

[0096] 51 First appearance

[0097] 52nd appearance

[0098] 61 Wiring Inductor

[0099] 62 DC positive wiring

[0100] 63 DC negative wiring

[0101] 64 AC cabling

[0102] 65 Switching Transient Current

[0103] 100 inverter.

Claims

1. A power semiconductor device, characterized in that, include: A circuit body having a pair of conductor portions and a power semiconductor element sandwiched between the pair of conductor portions; A substrate having through holes formed therein; as well as A sealing material that seals at least a portion of both the circuit body and the substrate. The circuit body is inserted into the through hole and has a first exposed surface and a second exposed surface exposed from the sealing material. The substrate has a first protrusion and a second protrusion protruding toward the center of the through hole and connected to the circuit body within the through hole. The first protrusion and the second protrusion are formed in opposite positions within the through hole, and at least one of the first protrusion and the second protrusion is a terminal for transmitting power to the power semiconductor element. The AC wiring built into the substrate and the second protrusion are arranged opposite to each other within the substrate.

2. The power semiconductor device as claimed in claim 1, characterized in that, The conductor portion and the second protrusion formed in the through hole are formed in opposite positions that sandwich the substrate in the middle.

3. A power semiconductor device, characterized in that, include: A circuit body having a pair of conductor portions and a power semiconductor element sandwiched between the pair of conductor portions; as well as A substrate having through holes formed therein. The circuit body is inserted into the through hole. The substrate has a first protrusion and a second protrusion protruding toward the center of the through hole and connected to the circuit body within the through hole. The first protrusion and the second protrusion are formed in opposite positions within the through hole, and at least one of the first protrusion and the second protrusion is a terminal for transmitting power to the power semiconductor element. The AC wiring built into the substrate and the second protrusion are arranged opposite to each other within the substrate.

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