SnSe in nanosheets x S 2-x SnSe2 heterojunction array and its construction method

Abstract

The SnSe provided in this application x S 2‑x / SnSe2 heterojunction array and construction method, including the following steps: vertically growing SnSe on a support substrate x Nanosheet array; for the SnSe x The nanosheet array was subjected to thermal annealing and vulcanization treatment; the SnSe after thermal annealing and vulcanization treatment x The SnSe continues to grow on the nanosheet array x Nanosheets are used to construct intra-nanostructures. Compared to traditional methods of creating two-dimensional heterostructures by stacking different two-dimensional materials using mechanical transfer techniques, this method utilizes low-temperature PVD to grow and prepare uniform, high-density SnSe2 nanosheet arrays, constructing two-dimensional intra-nanostructure SnSe2 nanosheets. x S 2‑x / SnSe2 heterojunctions, while inheriting the excellent properties of single materials, have expanded many superior properties, which can further improve the performance of two-dimensional material photodetectors and realize the development of next-generation ultra-high sensitivity optoelectronic devices.

Description

Technical Field

[0001] This application relates to the field of materials preparation technology, and in particular to a SnSe nanosheet. x S 2-x / SnSe2 heterojunction array and its construction method. Background Technology

[0002] In the post-Moore's Law era, an industrial landscape has emerged characterized by the integration and functional fusion of various semiconductors. Due to the large number of dislocations and point defects in third-generation semiconductor materials—nitride semiconductors—the photoelectric properties exhibit spatial inhomogeneity: ineffective measurement is impossible, the underlying mechanisms are poorly understood, and even effective quantum structure designs are difficult to propose. Attention has shifted to two-dimensional materials to extend Moore's Law to smaller device scales. An increasing number of optoelectronic devices based on two-dimensional semiconductor materials are being designed. Utilizing charge transfer between different materials to construct efficient electronic and optoelectronic devices will be a crucial direction for future device development, and these new design concepts represent a new exploration of extending Moore's Law. Because two-dimensional nanomaterials possess atomic-level thickness and lack dangling bonds, nanodevices based on them exhibit excellent electrical performance, such as high electron mobility and high on / off ratios. This makes two-dimensional materials one of the preferred materials for future high-performance field-effect transistors, supercapacitors, and logic circuits.

[0003] Due to its excellent optoelectronic properties, SnSe2 has great potential for application in optoelectronic devices. However, it still faces practical problems such as low mobility, slow response time, and low photoresponsivity. Therefore, constructing two-dimensional SnSe2 heterojunctions is an effective way to modify it. By building heterostructures, the performance of two-dimensional material photodetectors can be further improved. Two-dimensional material heterojunctions have many novel physical properties at the contact sites, allowing them to inherit the excellent properties of single materials while expanding many other superior properties, greatly expanding the types and application scenarios of two-dimensional materials. Secondly, there are only weak van der Waals forces between the layers of two-dimensional materials. Different two-dimensional materials can be combined to form arbitrary 2D / 2D and 2D / 3D van der Waals heterojunctions without problems such as lattice mismatch. It is this combination method that allows two-dimensional materials with different functions to be designed to form special spatial stacking structures, ultimately achieving complementary advantages and disadvantages between materials, and providing the possibility of realizing ultra-thin and highly efficient new devices. Van der Waals heterostructures can be created by stacking different 2D materials using mechanical transfer techniques. However, the stacking orientation cannot be precisely controlled, the interfaces between layers are easily contaminated, and there are significant challenges for large-scale sample production. Compared to traditional wide-bandgap semiconductor materials, SnSe2 two-dimensional thin film materials have atomic-level thickness, thus avoiding lattice mismatch between the material and the substrate.

[0004] The performance parameters of photodetectors mainly include responsivity, spectral response curve, and response time noise equivalent power. IV-VI group semiconductor materials such as selenium disulfide (SnS2) and tin diselenide (SnSe2) can be used to grow nanoscale thin films that meet performance requirements on substrates of various materials. However, most current chemical vapor deposition processes produce nanosheets that are too sparse and discrete, and their responsivity and response time cannot meet practical performance requirements. Summary of the Invention

[0005] Therefore, it is necessary to provide a uniform, high-density internal SnSe to address the shortcomings of existing technologies. x S 2-x Construction method of / SnSe2 heterojunction array and heterojunction array.

[0006] To solve the above problems, this application adopts the following technical solution:

[0007] One of the objectives of this application is to provide a SnSe nanosheet-in-nanosheet... x S 2-x The method for constructing a / SnSe2 heterojunction array includes the following steps:

[0008] Vertical growth of SnSe on a support substrate x Nanosheet array, x = 1.5–2.1;

[0009] The SnSe2 nanosheet array was subjected to thermal annealing and vulcanization treatment;

[0010] SnSe after heat annealing and vulcanization treatment x The SnSe2 nanosheets are further grown on the nanosheet array to construct intra-nanosheet heterojunctions.

[0011] In some embodiments, SnSe is grown vertically on a support substrate. x The nanosheet array process specifically includes the following steps: growing the SnSe on the supporting substrate using molecular beam epitaxy. x Nanosheet arrays were grown in a time of 10 to 20 minutes.

[0012] In some embodiments, the SnSe x The nanosheets in the nanosheet array have a thickness of 15 nm to 25 nm and a height of 0.5 μm to 2 μm.

[0013] In some embodiments, the SnSe x In the nanosheet array, the atomic ratio of Sn to Se is 1.5 to 2.1.

[0014] In some embodiments, when the SnSe x In the step of hot annealing and vulcanization treatment of nanosheet arrays, the atmosphere for hot annealing and vulcanization is 50% to 80% H2S and 20% to 50% N2.

[0015] In some embodiments, when the SnSe x In the step of hot annealing and vulcanization treatment of nanosheet arrays, the hot annealing temperature is controlled between 250℃ and 300℃.

[0016] In some embodiments, when the SnSe x In the hot annealing and vulcanization process of the nanosheet array, the heating and holding time is between 30 min and 120 min.

[0017] In some embodiments, when the SnSe x In the step of hot annealing and vulcanization of the nanosheet array, the nanosheet array formed after hot annealing and vulcanization is SnSe. x S 2-x Nanosheet array, x = 0.5 to 1.5.

[0018] In some embodiments, the SnSe after heat annealing and vulcanization treatment x The SnSe continues to grow on the nanosheet array x In the step of constructing a heterostructure within a nanosheet, the heterostructure within the nanosheet is SnSe. x S 2-x / SnSe2 heterojunction.

[0019] In some embodiments, the SnSe x S 2-x The thickness of the / SnSe2 heterojunction nanosheets is 15nm to 25nm, and the height is 1μm to 4μm.

[0020] The second objective of this application is to provide an internal SnSe x S 2-x / SnSe2 heterojunction array, including the inner SnSe x S 2-x The / SnSe2 heterojunction array was prepared using a construction method.

[0021] The present application adopts the above technical solution, and its beneficial effects are as follows:

[0022] The SnSe nanosheet provided in this application x S 2-x / SnSe2 heterojunction array and construction method, including the following steps: vertically growing SnSe on a support substrate xNanosheet array; for the SnSe x The nanosheet array undergoes heat annealing and vulcanization treatment; the SnSe after heat annealing and vulcanization treatment x The SnSe continues to grow on the nanosheet array x Nanosheets are used to construct intra-nanostructures. Compared to traditional methods of creating two-dimensional heterostructures by stacking different two-dimensional materials using mechanical transfer techniques, this method utilizes low-temperature PVD to grow and prepare uniform, high-density SnSe2 nanosheet arrays, constructing two-dimensional intra-nanostructure SnSe2 nanosheets. x S 2-x / SnSe2 heterojunctions, while inheriting the excellent properties of single materials, have expanded many superior properties, which can further improve the performance of two-dimensional material photodetectors and realize the development of next-generation ultra-high sensitivity optoelectronic devices. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 The inner SnSe provided for the embodiments of this application x S 2-x Flowchart of the construction method of / SnSe2 heterojunction array;

[0025] Figure 2 The inner SnSe provided for the embodiments of this application x S 2-x A schematic diagram illustrating the principle of constructing a / SnSe2 heterojunction array.

[0026] Figure 3 The Cr / Au / heterojunction SnSe provided in Embodiment 1 of this application x S 2-x / SnSe2 nanosheets.

[0027] Figure 4 The SnSe2 nanosheets and SnSe2 nanosheets obtained in Example 1 of this application. x S 2-x Nanosheets and SnSe x S 2-x SEM image of / SnSe2 heterojunction nanosheets.

[0028] Figure 5 The method for obtaining SnSe2 and SnSe by AFM as provided in Embodiment 1 of this application x S2-x and SnSe x S 2-x IV curves of the / SnSe2 heterojunction and the heterojunction array under illumination at 390 nm, 532 nm and 633 nm (0.584 mW / cm²). 2 IV characteristics obtained under ( ). Detailed Implementation

[0029] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0030] In the description of this application, it should be understood that the terms "upper", "lower", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0031] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments.

[0033] Please see Figure 1 and Figure 2 The SnSe nanosheets provided in this embodiment are respectively x S 2-x The flowchart and schematic diagram of the construction method of / SnSe2 heterojunction array are shown below, including steps S110 to S130. The implementation of each step is explained in detail below.

[0034] Step S110: Vertically grow SnSe on the support substrate x Nanosheet array, x = 1.5 to 2.1.

[0035] In this embodiment, SnSe is vertically grown on the supporting substrate. xThe nanosheet array process specifically includes the following steps: growing the SnSe on the supporting substrate using molecular beam epitaxy. x Nanosheet arrays were grown in a time of 10 to 20 minutes.

[0036] In this embodiment, the supporting substrate includes a Cr-Au metal electrode.

[0037] Specifically, the SnSe was grown on the supporting substrate using molecular beam epitaxy. x The nanosheet array comprises the following steps: adding a high-purity selenium source and a high-purity tin source to a molecular beam epitaxy (MBE) apparatus, preferably with a purity of 99.99%; heating the selenium source and the tin source respectively using the MBE apparatus; and spraying the selenium source and the tin source onto a substrate in the form of a molecular beam or an atomic beam, respectively, to form a SnSe nanosheet array. x (x = 1.5–2.1) nanosheet array structure. The substrate temperature is controlled at (170℃–250℃), and the growth time is 10 min–20 min. The thickness of the nanosheets in the semiconductor nanosheet array is 15 nm–25 nm, and the height is 0.5 μm–2 μm.

[0038] It is understandable that traditional methods for preparing two-dimensional material SnSe2 mainly include mechanical exfoliation, physical vapor deposition (heating SnSe2 powder at high temperatures), and chemical vapor deposition. The resulting SnSe2 nanosheets have highly discrete morphologies and random positions. Furthermore, because they are flat thin film structures with a thickness of <10 nm, their light absorption is weak, which is unfavorable for the integration of photodetectors. Traditional chemical vapor deposition processes for preparing SnSe2 nanosheets involve high growth temperatures, making it easier for SnSe2 molecules to overcome the migration energy barrier and stack laterally to form a flat film. However, when the growth temperature is low (<250℃), the molecular migration energy is insufficient to overcome the barrier, resulting in a stacked, vertical growth mode. In the embodiments described above, ultra-high vacuum co-evaporation technology is used to control the SnSe2 nanosheets by changing the substrate temperature and the vapor pressures of Sn and Se. x The migration energy and nucleation density of the nanosheets were determined, thereby obtaining a large-area, high-quality and high-density upright SnSe2 nanosheet array grown on a Cr-Au metal electrode.

[0039] Step S120: For the SnSe x The nanosheet array is subjected to thermal annealing and vulcanization treatment.

[0040] In some embodiments, the atmosphere for hot annealing and vulcanization is 50%–80% H2S and 20%–50% N2. The hot annealing temperature is controlled at 250°C–300°C. The heating and holding time for hot annealing is 30 min–120 min.

[0041] It is understandable that adjusting the heat annealing temperature and the ratio of H2S and N2 in the atmosphere can help regulate and control surface defect states—including internal material defects (Vsn, Vse, SnSe)—and modulate SnSe. x S 2-x Crystal quality of nanosheets, etc.

[0042] In the embodiments, the hot annealing and vulcanization treatment mainly involves adjusting and controlling internal crystal defects by controlling the heating and holding temperatures and times under an atmosphere of 50%–80% H2S and 20%–50% N2. The temperature is controlled between 250°C and 300°C, and the heating and holding times are between 30 min and 120 min, ultimately forming SnSe. x S 2-x Nanosheet array, x = 0.5 to 1.5.

[0043] Step S130: The SnSe after hot annealing and vulcanization treatment x The SnSe2 nanosheets are further grown on the nanosheet array to construct intra-nanosheet heterojunctions.

[0044] In this embodiment, the SnSe after hot annealing and vulcanization treatment x The SnSe was further grown on the nanosheet array. x (x = 1.5–2.1), substrate temperature controlled at (170℃–250℃), growth time 10 min–20 min. Intra-nanosheet heterojunctions are constructed, with nanosheets in the semi-nanosheet heterojunction array having a thickness of 15 nm–25 nm and a height of 1 μm–4 μm.

[0045] The internal SnSe provided in the above embodiments of this application x S 2-x / SnSe2 heterojunction array and construction method: Compared with the traditional method of creating two-dimensional heterojunctions by stacking different two-dimensional materials through mechanical transfer technology, this method uses low-temperature PVD to grow and prepare uniform, high-density SnSe2 nanosheet arrays, constructing two-dimensional nanosheets with SnSe x S 2-x / SnSe2 heterojunctions, while inheriting the excellent properties of single materials, have expanded many superior properties, which can further improve the performance of two-dimensional material photodetectors and realize the development of next-generation ultra-high sensitivity optoelectronic devices.

[0046] Example 1

[0047] This embodiment describes a vertical SnSe2 fabrication method on a chromium-gold alloy electrode, comprising the following steps: adding high-purity selenium and tin material sources to a molecular beam epitaxy (MBE) apparatus, preferably with a purity of 99.99%. The tin material source is first heated and then the selenium material source is heated using the MBE apparatus, and the selenium and tin material sources are respectively sprayed onto the substrate in the form of molecular beams or atomic beams. The temperatures of the Se and Sn sources and the substrate are 230°C, 1150°C, and 240°C, respectively, and the vacuum degree is 1×10⁻⁶. -5 Pa. Formation of SnSe x A nanosheet array structure with x = 1.6–2.2 was grown in 15 min. The nanosheets in the semiconductor nanosheet array had a thickness of 25 nm and a height of 1 μm.

[0048] Secondly, by adjusting the temperature of the hot annealing and vulcanization treatment and the ratio of H2S and N2 in the atmosphere, the surface defect states—including internal material defects (Vsn, Vse, SnSe)—were controlled, as well as the crystal quality of SnSeS nanosheets. The hot annealing and vulcanization treatment mainly involves controlling the heating rate, holding temperature, and holding time in a 70% H2S and 30% N2 atmosphere to control internal defects. Therefore, the temperature was controlled at 300℃, with heating and holding times of approximately 30 min and 120 min, respectively, ultimately forming SnSeS nanosheets. x S 2-x (x = 0.5–1.5) nanosheet arrays. Finally, the prepared SnSe... x S 2-x The nanosheet array was again grown directly using molecular beam epitaxy to construct an intra-nanosheet heterostructure SnSe2. x S 2-x / SnSe2, the heterojunction nanosheet has a thickness of 25nm and a height of 2μm.

[0049] Please see Figure 3 This is the Cr / Au / heterojunction SnSe obtained in Example 1. x S 2-x / SnSe2 nanosheets. Figure 4 In this example, ab represents the top and cross-sectional SEM images of the SnSe2 nanosheets obtained in Example 1, and cd represents the SnSe2 nanosheets. x S 2-x SEM images of the top and cross-sectional views of the nanosheet array, ef for SnSe. x S 2-x SEM images of top and cross-sectional views of / SnSe2 heterojunction nanosheets.

[0050] Figure 5In this embodiment, ab represents SnSe2 and SnSe obtained through AFM, respectively. x S 2-x IV curves. cd represent SnSe obtained through AFM. x S 2-x IV curves of the / SnSe2 heterojunction and IV characteristics of the heterojunction array obtained under illumination of 390nm, 532nm and 633nm (0.584mW / cm2).

[0051] The SnSe initially obtained in this embodiment 1 of the invention x S 2-x / SnSe2 heterojunction photodetectors, compared to photodetectors made of single two-dimensional materials (such as SnSe2 photodetectors with a 51.67AW value), -1 The response rate and 1.83×10 10 Jones's detectivity) has a high response rate (1.63 × 10² AW). -1 ) and excellent detectivity (1.45×10 12 Jones) enables the development of next-generation ultra-high sensitivity optoelectronic devices.

[0052] The inner SnSe provided in this embodiment 1 x S 2-x This method for constructing SnSe2 heterojunction arrays, compared to the traditional method of creating two-dimensional heterojunctions by stacking different two-dimensional materials using mechanical transfer technology, utilizes a low-temperature PVD method to grow and prepare uniform, high-density SnSe2 nanosheet arrays, constructing two-dimensional nanosheets with SnSe2 nanosheets. x S 2-x / SnSe2 heterojunctions, while inheriting the excellent properties of single materials, have expanded many superior properties, which can further improve the performance of two-dimensional material photodetectors and realize the development of next-generation ultra-high sensitivity optoelectronic devices.

[0053] Example 2

[0054] This embodiment describes a vertical SnSe2 fabrication method on a chromium-gold alloy electrode, comprising the following steps: adding high-purity selenium and tin material sources to a molecular beam epitaxy (MBE) apparatus, preferably with a purity of 99.99%. The tin material source is first heated and then the selenium material source is heated using the MBE apparatus, and the selenium and tin material sources are respectively sprayed onto the substrate in the form of molecular beams or atomic beams. The temperatures of the Se and Sn sources and the substrate are 230°C, 1150°C, and 240°C, respectively, and the vacuum degree is 1×10⁻⁶. -5 Pa. Formation of SnSe xA nanosheet array structure with x = 1.6–2.2 was grown in 10 min. The nanosheets in the semiconductor nanosheet array had a thickness of 15 nm and a height of 0.5 μm.

[0055] Secondly, by adjusting the temperature of the hot annealing and vulcanization treatment and the ratio of H2S and N2 in the atmosphere, surface defect states—including internal material defects (Vsn, Vse, SnSe)—were controlled, as well as the crystal quality of SnSeS nanosheets. The hot annealing and vulcanization treatment mainly involved controlling the heating rate, holding temperature, and holding time in a 50% H2S and 50% N2 atmosphere to control internal defects. Therefore, the temperature was controlled at 250℃, with heating and holding times of approximately 30 min and 120 min, respectively, ultimately forming SnSeS nanosheets. x S 2-x (x = 0.5–1.5) nanosheet arrays. Finally, the prepared SnSe... x S 2-x The nanosheet array was again grown directly using molecular beam epitaxy to construct an intra-nanosheet heterostructure SnSe2. x S 2-x / SnSe2, the heterojunction nanosheet has a thickness of 15nm and a height of 1μm.

[0056] Example 3

[0057] This embodiment describes a vertical SnSe2 fabrication method on a chromium-gold alloy electrode, comprising the following steps: adding high-purity selenium and tin material sources to a molecular beam epitaxy (MBE) apparatus, preferably with a purity of 99.99%. The tin material source is first heated and then the selenium material source is heated using the MBE apparatus, and the selenium and tin material sources are respectively sprayed onto the substrate in the form of molecular beams or atomic beams. The temperatures of the Se and Sn sources and the substrate are 230°C, 1150°C, and 240°C, respectively, and the vacuum degree is 1×10⁻⁶. -5 Pa. Formation of SnSe x A nanosheet array structure with x = 1.6–2.2 was grown in 20 min. The nanosheets in the semiconductor nanosheet array had a thickness of 20 nm and a height of 2 μm.

[0058] Secondly, by adjusting the temperature of the hot annealing and vulcanization treatment and the ratio of H2S and N2 in the atmosphere, the surface defect states—including internal material defects (Vsn, Vse, SnSe)—were controlled, as well as the crystal quality of SnSeS nanosheets. The hot annealing and vulcanization treatment mainly involves controlling the heating rate, holding temperature, and holding time in an atmosphere of 80% H2S and 20% N2 to control internal defects. Therefore, the temperature was controlled at 280℃, with heating and holding times of approximately 30 min and 120 min, respectively, ultimately forming SnSeS nanosheets. x S 2-x (x = 0.5–1.5) nanosheet arrays. Finally, the prepared SnSe... x S 2-x The nanosheet array was again grown directly using molecular beam epitaxy to construct an intra-nanosheet heterostructure SnSe2. x S 2-x / SnSe2, the heterojunction nanosheet has a thickness of 20nm and a height of 4μm.

[0059] It is understood that the technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0060] The above are merely preferred embodiments of this application, and only specifically describe the technical principles of this application. These descriptions are only for explaining the principles of this application and should not be construed as limiting the scope of protection of this application in any way. Based on this explanation, any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application, as well as other specific embodiments of this application that can be conceived by those skilled in the art without creative effort, should be included within the scope of protection of this application.

Claims

1. A nanosheet-in-strip SnSe x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, Includes the following steps: Vertical growth of SnSe on a support substrate x Nanosheet array, x=1.5~2.1; For the SnSe x Nanosheet arrays undergo thermal annealing and vulcanization treatment; SnSe after heat annealing and vulcanization treatment x SnSe2 nanosheets are further grown on the nanosheet array to construct intra-nanosheet heterostructures; In the SnSe x In the step of hot annealing and vulcanization of the nanosheet array, the nanosheet array formed after hot annealing and vulcanization is SnSe. x S 2-x Nanosheet array, x = 0.5~1.5; SnSe after heat annealing and vulcanization treatment x In the step of continuing to grow SnSe2 nanosheets on the nanosheet array to construct an intra-nanosheet heterostructure, the intra-nanosheet heterostructure is SnSe2. x S 2-x / SnSe2 heterojunction.

2. The SnSe nanosheet as described in claim 1 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, Vertical growth of SnSe on a support substrate x The nanosheet array process specifically includes the following steps: growing the SnSe on the supporting substrate using molecular beam epitaxy. x Nanosheet arrays, growth time is 10 min to 20 min.

3. The SnSe nanosheet as described in claim 1 or 2 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, The thickness of the nanosheets in the SnSex nanosheet array is 15nm~25nm, and the height is 0.5μm~2μm.

4. The SnSe nanosheet as described in claim 1 or 2 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, In the SnSex nanosheet array, the atomic ratio of Sn to Se is 1.5 to 2.

1.

5. The SnSe nanosheet as described in claim 1 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, In the step of hot annealing and vulcanizing the SnSex nanosheet array, the atmosphere for hot annealing and vulcanization is 50%~80%H2S and 20%~50%N2.

6. The SnSe nanosheet as described in claim 1 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, In the step of hot annealing and vulcanization treatment of the SnSex nanosheet array, the hot annealing temperature is controlled at 250℃~300℃.

7. The SnSe nanosheet as described in claim 1 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, In the step of hot annealing and vulcanization treatment of the SnSex nanosheet array, the heating and holding time of hot annealing is 30 min to 120 min.

8. The SnSe nanosheet as described in claim 1 x S 2-x The method for constructing a / SnSe2 heterojunction array is characterized by, The SnSe x S 2-x The thickness of the / SnSe2 heterojunction nanosheets is 15nm~25nm, and the height is 1μm~4μm.

9. A SnSe nanosheet x S 2-x / SnSe2 heterojunction array, characterized in that... The SnSe nanosheets according to any one of claims 1 to 8 x S 2-x / The SnSe2 heterojunction array was prepared using a construction method.

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