Novel ambient light adaptive display driving system based on light-absorbing artificial synapse device

Abstract

The application relates to a novel ambient light self-adaptive display driving system based on a light-absorbing artificial synapse device. The system comprises a control module and a light-emitting module, wherein the control module is the light-absorbing artificial synapse device, and the light-emitting module is a one-way conductive device. The light-absorbing artificial synapse device is of a bottom gate top contact structure, and sequentially comprises a bottom metal electrode layer, an insulating layer, a semiconductor layer, a light-absorbing layer and a top metal electrode layer from bottom to top. A single device itself has multiple conductance values which can be adjusted, and the conductance value changes under the influence of ambient light, and is applied to ambient light change driving light emission. The application can not only regulate the current size of a display circuit by responding to the ambient light intensity through the light-absorbing layer of the artificial synapse, but also can feed back the current size of the display circuit by the light-emitting light through the light-absorbing layer.

Description

Technical Field

[0001] This invention relates to the field of device technology and display driving technology, specifically to a novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device. Background Technology

[0002] Vision is the primary way humans understand the world, and display is a crucial method for human-computer interaction between vision and electronic devices. Traditional display devices mainly consist of sensing modules, processing modules, and light-emitting modules. However, the driving capabilities of existing display processing modules are insufficient to achieve ultra-high-density light-emitting pixels, resulting in complex hardware that is difficult to integrate. Traditional display strategies separate storage and computation, which is a major obstacle to future display development. The complete physical separation of the light-emitting and processing modules leads to low integration, limited functionality, complex manufacturing processes, and a small effective emission area. The physical separation of storage and processing modules results in high energy consumption for data conversion, significant latency, and is unfavorable for frequent data interaction.

[0003] A novel ambient light adaptive display driving strategy based on light-absorbing artificial synapses applies neuromorphic devices to displays, using a single light-absorbing artificial synapse to implement the sensing and processing module, thereby reducing energy consumption and transmission latency in data processing. This strategy aligns better with future display development trends, enabling point-to-point adaptation of ambient light to each pixel. Traditional display strategies require an additional photosensitive device to achieve point-to-point adaptation, increasing power consumption. In contrast, the ambient light adaptive neuromorphic display strategy based on light-absorbing artificial synapses only needs to add a light-absorbing layer to a standard artificial synapse device, significantly reducing power consumption. Summary of the Invention

[0004] The purpose of this invention is to provide a novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device. This system not only regulates the current of the display circuit by responding to the intensity of ambient light through the light-absorbing layer of the artificial synapse, but also allows the emitted light to self-regulate the current of the display circuit through feedback from the light-absorbing layer. The neuromorphic device prepared by this invention, namely the light-absorbing artificial synapse device, can simultaneously respond to the light intensity of both ambient light and the light-emitting module through a single device. Its application in driving circuit displays expands the application field of neuromorphic devices and improves conventional display driving circuits.

[0005] To achieve the above objectives, the technical solution of the present invention is: a novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device, comprising a control module and a light-emitting module, wherein the control module is the light-absorbing artificial synapse device; the light-absorbing artificial synapse device has a bottom-gate top-contact structure, comprising, from bottom to top, a bottom metal electrode layer, an insulating layer with an electrical double-layer effect, a semiconductor layer, a light-absorbing layer, and a top metal electrode layer; a single light-absorbing artificial synapse device itself has multiple different electrical conductance states, which can be switched by the gate and illumination to drive the light-emitting module to emit light in response to changes in ambient light.

[0006] In one embodiment of the present invention, the input voltage activates the light-absorbing artificial synapse device, and the control module generates a changing output signal according to the change in ambient light to control the change of the light-emitting module; the control module is connected to the light-emitting module and the power input voltage signal respectively, and can be used to sense changes in ambient light at the same time; the light-emitting module, i.e. the light-emitting device, is connected to the control module and the common ground voltage GND respectively, and is used to emit light for display under the control module.

[0007] In one embodiment of the present invention, the light-absorbing artificial synapse device can have multi-conductance tunability under the combined action of different electrical pulses and light pulses, and its conductance changes have short-range and long-range plasticity of the synapse.

[0008] In one embodiment of the present invention, the light-absorbing artificial synapse device can change the channel current under illumination with a wavelength of 390nm-780nm, thereby controlling the output of the light-absorbing artificial synapse device. One end of the electrode of the light-absorbing artificial synapse device is connected to the input signal terminal Y, and the other end of the electrode is connected to the light-emitting device to control the on and off of the light-emitting device.

[0009] In one embodiment of the present invention, the light-emitting device is a unidirectional conductive device, and the driving voltage is relatively low.

[0010] In one embodiment of the present invention, the gate electrode of the light-absorbing artificial synapse device is connected to the input control signal; the source electrode of the light-absorbing artificial synapse device is connected to the anode of the light-emitting device; the drain electrode of the light-absorbing artificial synapse device is connected to the positive terminal of the circuit; and the cathode of the light-emitting device is connected to the circuit ground.

[0011] In one embodiment of the present invention, the system is implemented as follows: Step S1, Grayscale Control Stage: Under the influence of no ambient light, the conductance of the light-absorbing artificial synapse device is changed by applying a voltage signal Y through the input voltage. Step S2, Light emission stage: Apply source-drain voltage, and the electrical signal is output from the light-absorbing artificial synapse device to the light-emitting device, controlling the light-emitting device to turn on and emit light; Step S3, Control Stage: Place the system under ambient light, apply voltage signal Y through input voltage to change the conductance of the light-absorbing artificial synapse device, and repeat step S2.

[0012] In one embodiment of the present invention, the substrate of the light-absorbing artificial synapse device is an insulating substrate including glass, quartz, and PET; the bottom metal electrode layer and the top metal electrode layer are conductive materials; the insulating layer is an ion-migratable insulating material; the semiconductor layer is a semiconductor material with high mobility; and the light-absorbing layer is a light-absorbing material with an absorption wavelength range of 390nm-780nm.

[0013] In one embodiment of the present invention, the bottom metal electrode layer is used as a device gate, and the conductive material used includes highly doped silicon, gold, and silver; the semiconductor layer material is a high-mobility semiconductor material including ITO and IGZO; the insulating layer insulating material is a metal oxide insulating material including tantalum oxide, zirconium oxide, and hafnium oxide; the light-absorbing layer is a light-absorbing material with an absorption spectrum in the range of 390nm-780nm, including Mxene oxide, quantum dots, PDVT-10, and ZnO.

[0014] In one embodiment of the present invention, the method for preparing the light-absorbing artificial synapse device is as follows: (1) Using a substrate with a highly conductive material as the substrate; (2) On the substrate obtained in step (1), a solid dielectric layer with an electric double-layer effect is prepared by a thin film preparation process, wherein the thin film preparation process includes sputtering and single-atom deposition; (3) On the solid dielectric layer with electrical double layer effect obtained in step (2), a high mobility semiconductor layer is prepared by a thin film preparation process, wherein the thin film preparation process includes sputtering and single-atom deposition; (4) On the high mobility semiconductor layer obtained in step (3), a light-absorbing layer is prepared by a thin film preparation process, including spin coating, blade coating and inkjet printing.

[0015] (5) On the high mobility semiconductor layer obtained in step (4), a metal layer is prepared by a thin film preparation process. The metal layer forms the source and drain electrodes, and the semiconductor region between the source and drain electrodes is the channel. The thin film preparation process includes sputtering and thermal evaporation.

[0016] Compared to existing technologies, this invention offers the following advantages: The novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device, compared to traditional display systems, eliminates the need for additional photoresistors for power consumption in achieving point-to-point pixel-level light emission. Instead, it directly utilizes the light-absorbing layer on a single device to absorb changes in ambient light, which in turn alters the electrical signal output. Furthermore, the light from the light-emitting module itself is further fed back to the artificial synaptic device for regulation, further reducing the power consumption required for display. Attached Figure Description

[0017] Figure 1This is a block diagram illustrating the principle of the ambient light adaptive display driving system based on a light-absorbing artificial synapse device according to the present invention.

[0018] Figure 2 A schematic diagram of the ambient light adaptive display driving system based on a light-absorbing artificial synapse device, which is an application of the present invention; Figure 3 This is a schematic diagram of the voltage characteristics of the light-absorbing artificial synapse device of the present invention; Figure 4 The conductivity changes of the light-absorbing artificial synapse prepared in Example 1 under different control voltages; Figure 5 The light-absorbing artificial synapse prepared in Example 1 is used in a driving circuit to display changes in brightness; In the diagram: 100 - bottom metal electrode layer, 110 - insulating layer, 120 - semiconductor layer, 130 - light-absorbing layer with an absorption band of 390nm-780nm, 140 - top metal electrode layer, Y - power input voltage, GND - common ground voltage. Detailed Implementation

[0019] The technical solution of the present invention will now be described in detail with reference to the accompanying drawings.

[0020] like Figure 1 As shown, this invention provides a novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device, including a control module and a light-emitting module. The control module is the light-absorbing artificial synapse device. The light-absorbing artificial synapse device has a bottom-gate-top-contact structure, consisting of a bottom metal electrode layer, an insulating layer with an electrical double-layer effect, a semiconductor layer, a light-absorbing layer, and a top metal electrode layer, from bottom to top. Each light-absorbing artificial synapse device has multiple different conductance states, which can be switched by the gate and illumination to drive the light-emitting module to emit light in response to changes in ambient light. An input voltage turns on the light-absorbing artificial synapse device, and the control module generates a changing output signal according to changes in ambient light to control the changes in the light-emitting module. The control module is connected to both the light-emitting module and the power input voltage signal, and can also be used to sense changes in ambient light. The light-emitting module, i.e., the light-emitting device, is connected to both the control module and the common ground voltage GND, and is used to emit light for display under the control module.

[0021] Specifically, this invention applies to light-absorbing artificial synaptic structures in novel ambient light adaptive display driving strategies, such as... Figure 2As shown, from bottom to top, the layers are: a bottom metal electrode layer 100, an insulating layer 110 with an electrical double-layer effect, an inorganic semiconductor layer 120, a light-absorbing layer with an absorption band of 390nm-780nm, and a top metal electrode layer 140. The bottom metal electrode layer 100 is a highly doped silicon wafer, which serves as both a substrate and a gate. The insulating layer 110 with an electrical double-layer effect is tantalum oxide. The semiconductor layer 120 is indium tin oxide. The light-absorbing layer 130 is zinc oxide. The top metal electrode layer 140 is gold.

[0022] The circuit structure of this invention applied to a novel ambient light adaptive display driving strategy is as follows: Figure 2 As shown, from left to right, the components are: power input voltage VDD, control module, light-emitting module, and common ground voltage GND. The control module is a light-absorbing artificial synapse, and the light-emitting module is a unidirectional conductive device, such as a light-emitting diode or Micro-LED. Figure 3 This is a schematic diagram of the voltage characteristics of the light-absorbing artificial synapse device of the present invention.

[0023] The present invention will be further described below with reference to specific embodiments, but the present invention is not limited to these embodiments.

[0024] Example 1 1) A heavily doped P-type silicon wafer with a length of 100nm silicon dioxide, cut to 1.5cm × 1.5cm, is cleaned with acetone, isopropanol, chloroform, and distilled water (three times), and then dried with nitrogen to obtain a clean silicon wafer as a substrate.

[0025] 2) A tantalum oxide insulating layer with a thickness of 50-70 nm is sputtered onto the silicon wafer obtained in step 1) under conditions of argon and oxygen ratio of 40:10 and sputtering pressure of 0.5 Pa.

[0026] 3) An ITO semiconductor layer with a thickness of 50 nm was sputtered onto the sample obtained in step 2) under the conditions of an argon-oxygen ratio of 30:0 and a sputtering pressure of 0.3 Pa.

[0027] 4) A ZnO nanoparticle solution was deposited on the sample obtained in step 3) by spin coating at 3000 rpm for 40 s using a sputtering method. Then, the solution was annealed at 120 degrees Celsius for 30 minutes to obtain a ZnO light-absorbing layer.

[0028] 5) A 50nm thick top gold electrode layer with a channel length of 30μm and a width of 1000μm is deposited on the sample obtained in step 3) using a special mask via thermal evaporation.

[0029] 6) The control module is connected to the light-emitting module and the power input voltage Y, and is used to control the light-emitting module according to the input signal from the signal line. The device regulates the input voltage, and the control module is connected to the light-emitting element to generate an output signal based on the input signal.

[0030] 7) When an approximately 8V positive voltage is applied without the influence of ambient light, the artificial synaptic device is activated, and the light-emitting module is turned on.

[0031] 8) When ambient light is introduced, a positive voltage of approximately 8V is applied, the artificial synaptic device is turned on, and the light-emitting module is simultaneously regulated by electrical and optical signals.

[0032] 9) The light-emitting module provides light feedback to the artificial synaptic device, which simultaneously regulates the output signal along with ambient light and electrical signals.

[0033] Figure 4 The conductivity changes of the light-absorbing artificial synapse prepared in Example 1 under different control voltages; Figure 5 The light-absorbing artificial synapse prepared in Example 1 was applied to the driving circuit to display brightness changes.

[0034] Example 2 A 1.5cm × 1.5cm heavily doped P-type silicon wafer was cut and cleaned with acetone, isopropanol, chloroform, and distilled water (three times). After being dried with nitrogen, a clean silicon dioxide wafer was obtained as the substrate.

[0035] A copper layer with a length of 500 μm, a width of 500 μm, and a thickness of 50 nm was sputtered onto the silicon wafer obtained in step 1) using a special mask as the bottom metal electrode layer.

[0036] A tantalum oxide insulating layer with a thickness of 50-70 nm is sputtered onto the silicon wafer obtained in step 2) under conditions of an argon-oxygen ratio of 40:10 and a sputtering pressure of 0.5 Pa.

[0037] An IGZO semiconductor layer with a thickness of 50 nm was sputtered onto the sample obtained in step 3) under conditions of an argon-oxygen ratio of 30:0 and a sputtering pressure of 0.3 Pa.

[0038] The ZnO nanoparticle solution was deposited on the sample obtained in step 4) by spin coating at 3000 rpm for 40 s using a sputtering method. Then, it was annealed at 120 degrees Celsius for 30 minutes to obtain a ZnO light-absorbing layer.

[0039] 6) A 50nm thick top gold electrode layer with a channel length of 30μm and a width of 1000μm is deposited on the sample obtained in step 5) using a special mask via thermal evaporation.

[0040] 7) The control module is connected to the light-emitting module and the power input voltage Y, and is used to control the light-emitting module according to the input signal from the signal line. The device regulates the input voltage, and the control module is connected to the light-emitting element to generate an output signal based on the input signal.

[0041] 8) When an approximately 8V positive voltage is applied without the influence of ambient light, the artificial synaptic device is activated, and the light-emitting module is turned on.

[0042] 9) When ambient light is introduced, a positive voltage of approximately 8V is applied, the artificial synaptic device is turned on, and the light-emitting module is simultaneously regulated by electrical and optical signals.

[0043] 10) The light-emitting module provides light feedback to the artificial synaptic device, which simultaneously regulates the output signal along with ambient light and electrical signals.

[0044] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device, characterized in that, It includes a control module and a light-emitting module. The control module is a light-absorbing artificial synapse device. The light-absorbing artificial synapse device has a bottom gate and top contact structure. From bottom to top, it consists of a bottom metal electrode layer, an insulating layer with an electrical double-layer effect, a semiconductor layer, a light-absorbing layer, and a top metal electrode layer. Each light-absorbing artificial synapse device has multiple different electrical conductance states and can be switched by the gate and illumination to drive the light-emitting module to emit light when the ambient light changes. The input voltage activates the light-absorbing artificial synapse device. The control module generates a changing output signal based on changes in ambient light to control the changes in the light-emitting module. The control module is connected to both the light-emitting module and the power input voltage signal, and can also be used to sense changes in ambient light. The light-emitting module, i.e., the light-emitting device, is connected to both the control module and the common ground voltage GND, and is used to emit light for display under the control module. The substrate of the light-absorbing artificial synapse device is an insulating substrate including glass, quartz, and PET. The bottom metal electrode layer and the top metal electrode layer are conductive materials. The insulating layer is an ion-migratable insulating material. The semiconductor layer is a semiconductor material with high mobility. The light-absorbing layer is a light-absorbing material with an absorption band of 390nm-780nm. The bottom metal electrode layer serves as the device gate, and the conductive materials used include gold and silver; the semiconductor layer material is a high-mobility semiconductor material including ITO and IGZO; the insulating layer insulating material is a metal oxide insulating material including tantalum oxide, zirconium oxide, and hafnium oxide; the light-absorbing layer is a light-absorbing material with an absorption spectrum in the range of 390nm-780nm, including Mxene oxide, quantum dots, PDVT-10, and ZnO.

2. The novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device according to claim 1, characterized in that, The light-absorbing artificial synapse device can have multiple conductance adjustable properties under the combined action of different electrical pulses and light pulses, and its conductance changes have short-range and long-range plasticity of the synapse.

3. The novel ambient light adaptive display driving system based on a light-absorbing artificial synapse device according to claim 1, characterized in that, The light-absorbing artificial synapse device can change the channel current under illumination with a wavelength of 390nm-780nm, thereby controlling the output of the light-absorbing artificial synapse device. The gate electrode of the light-absorbing artificial synapse device is connected to the input signal terminal Y, and the source electrode is connected to the light-emitting device to control the on and off of the light-emitting device.

4. The novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device according to claim 1, characterized in that, The light-emitting device is a unidirectional conductive device.

5. The novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device according to claim 1, characterized in that, The gate electrode of the light-absorbing artificial synapse device is connected to the input control signal; the source electrode of the light-absorbing artificial synapse device is connected to the anode of the light-emitting device; the drain electrode of the light-absorbing artificial synapse device is connected to the positive terminal of the circuit; and the cathode of the light-emitting device is connected to the circuit ground.

6. The novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device according to claim 1, characterized in that, The system is implemented as follows: Grayscale control stage: Under the influence of no ambient light, the conductance of the light-absorbing artificial synapse device is changed by applying a voltage signal Y through the input voltage; Light emission stage: When the source-drain voltage is applied, the electrical signal is output from the light-absorbing artificial synapse device to the light-emitting device, controlling the light-emitting device to turn on and emit light; Control phase: Place the system under ambient light, apply a voltage signal Y through the input voltage to change the conductivity of the light-absorbing artificial synapse device, and repeat the emission phase.

7. A method for fabricating a novel ambient light adaptive display driving system based on a light-absorbing artificial synaptic device as described in any one of claims 1 to 6, characterized in that, include: Step (1): Use a substrate with a highly conductive material as the substrate; Step (2): On the substrate obtained in step (1), a solid dielectric layer with an electric double-layer effect is prepared by a thin film preparation process, wherein the thin film preparation process includes sputtering; Step (3): On the solid dielectric layer with electrical double-layer effect obtained in step (2), a high mobility semiconductor layer is prepared by a thin film preparation process, the thin film preparation process including sputtering; Step (4): On the high mobility semiconductor layer obtained in step (3), a light-absorbing layer is prepared by a thin film preparation process, including spin coating, blade coating, and inkjet printing; Step (5): On the light-absorbing layer obtained in step (4), a metal layer is prepared by a thin film preparation process. The metal layer forms the source and drain electrodes, and the semiconductor region between the source and drain electrodes is the channel. The thin film preparation process includes sputtering and thermal evaporation.

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