Optoelectronic memory device and method of manufacturing the same, and data storage method

Abstract

This application provides an optoelectronic memory device, its fabrication method, and a data storage method, belonging to the field of semiconductor memory devices. The optoelectronic memory device includes: a substrate, source / drain electrodes, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate electrode, wherein the insulating dielectric layer, floating gate layer, photosensitive dielectric layer, and gate electrode are sequentially disposed; wherein potential barriers are formed between the floating gate layer and the insulating dielectric layer, and between the floating gate layer and the photosensitive dielectric layer; the photosensitive dielectric layer exhibits insulating properties in the dark state, and semiconductor properties under bandgap-matched light irradiation. The data storage method using this optoelectronic memory device has low operating voltage requirements, can better adapt to different application scenarios, and can effectively achieve multi-value storage.

Description

Technical Field

[0001] This application relates to the field of semiconductor memory devices, and more specifically, to an optoelectronic memory device, a method for fabricating the same, and a method for storing data. Background Technology

[0002] Smart homes, autonomous driving, and bionic robots have gradually entered our lives, marking a major explosion in the digital information age. Correspondingly, massive amounts of data are constantly being generated, putting enormous pressure on non-volatile data storage. In the field of non-volatile storage, even with the continuous emergence of new principles and structures, such as magnetic storage, ferroelectric storage, and phase-change storage, flash memory based on the floating gate structure remains firmly in its position.

[0003] However, the drawbacks of flash memory have gradually become apparent in the face of massive amounts of data: on the one hand, most flash memory cells only have 1 bit of storage capacity, and a small number have 2 bits of storage capacity. Moreover, their integration density is also constrained by the limits of Moore's Law, making the contradiction between the large amount of data generated every day and the existing storage capacity increasingly prominent; on the other hand, the programming voltage of flash memory has always been maintained above 10V, which brings huge energy consumption.

[0004] In the post-Moore's Law era, to further enhance the storage capacity of non-volatile memory devices, optical control terminals were introduced, enabling multi-value optoelectronic storage based on different principles such as channel defect capture, interface defect capture, photochromism, and tunneling floating gates. However, the charge write voltage of these device structures is much higher than 10V; and the realization of their optoelectronic storage function is heavily dependent on the design of the channel material, resulting in poor portability and difficulty in meeting different application scenarios and requirements.

[0005] Therefore, it is urgent to develop optoelectronic storage devices with multi-value storage capabilities, low operating voltage, and strong portability. Summary of the Invention

[0006] The purpose of this application is to provide an optoelectronic storage device and its fabrication method, as well as a data storage method, which has low operating voltage requirements, can adapt well to different application scenarios, and can achieve multi-value storage well.

[0007] The embodiments of this application are implemented as follows:

[0008] In a first aspect, embodiments of this application provide an optoelectronic storage device, comprising: a substrate, source / drain electrodes, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate electrode, wherein the insulating dielectric layer, the floating gate layer, the photosensitive dielectric layer, and the gate electrode are sequentially disposed; potential barriers are formed between the floating gate layer and the insulating dielectric layer and between the floating gate layer and the photosensitive dielectric layer; the photosensitive dielectric layer has insulating properties in the dark state and semiconductor properties under bandgap-matched light irradiation.

[0009] In a second aspect, embodiments of this application provide a method for fabricating an optoelectronic storage device as provided in the first aspect embodiment, comprising: forming a source / drain electrode, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate electrode on a substrate.

[0010] Thirdly, embodiments of this application provide a data storage method using the optoelectronic storage device provided in the first aspect embodiment, comprising: writing electrons into a floating gate layer by simultaneously applying a gate negative voltage pulse and a light pulse; and erasing electrons in the floating gate layer by applying a light pulse.

[0011] The optoelectronic storage devices, their fabrication methods, and data storage methods provided in this application have the following beneficial effects:

[0012] In optoelectronic storage devices, a photosensitive dielectric layer is disposed between a floating gate layer and a gate electrode to enable gate injection for data storage. When using this optoelectronic storage device for data storage, the insulating properties of the photosensitive dielectric layer in the dark and its semiconductor properties under certain light irradiation are utilized. By simultaneously applying a negative gate voltage pulse and a light pulse, electrons can be written into the floating gate layer; by applying only a light pulse, electrons in the floating gate layer can be erased. Potential barriers are formed between the floating gate layer and the photosensitive dielectric layer, and between the floating gate layer and the insulating dielectric layer, ensuring that electrons are stably stored in the floating gate layer after writing.

[0013] When writing electrons, the presence of the photosensitive dielectric layer allows for the simultaneous use of voltage pulses and light pulses, resulting in lower operating voltage requirements.

[0014] By utilizing the combination of voltage pulses and light pulses, multiple values ​​can be stored by changing the voltage pulses and light pulses.

[0015] Since data storage mainly relies on the characteristics of the photosensitive dielectric layer under different states, there are no special requirements for the design of the channel layer. This makes the application of optoelectronic storage devices not limited by the design of the channel layer, and they have good portability and can adapt well to different application scenarios.

[0016] Because of the gate injection method, damage to the channel layer can be avoided by frequent write processes. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 A schematic diagram of the structure of an optoelectronic storage device provided in an embodiment of this application;

[0019] Figure 2 A schematic diagram of the charge writing process of the optoelectronic storage device provided in the embodiments of this application;

[0020] Figure 3 This is a schematic diagram of the charge erasure process of the optoelectronic storage device provided in the embodiments of this application;

[0021] Figure 4 Test results of charge writing and erasing performance of the optoelectronic storage device provided in the embodiments of this application;

[0022] Figure 5 Transfer characteristic curves of the optoelectronic storage device provided in the embodiments of this application before and after writing;

[0023] Figure 6 Fatigue test results for the optoelectronic storage devices provided in the embodiments of this application;

[0024] Figure 7 The storage retention performance test results of the optoelectronic storage devices provided in the embodiments of this application;

[0025] Figure 8 The optoelectronic storage device provided in the embodiments of this application achieves multi-value storage by changing the write voltage;

[0026] Figure 9 The optoelectronic storage device provided in the embodiments of this application achieves multi-value storage by changing the write optical pulse width;

[0027] Figure 10 The experimental process of achieving multi-value storage through multiple writes in the optoelectronic storage device provided in the embodiments of this application;

[0028] Figure 11 Experimental results of achieving multi-value storage through multiple writes using the optoelectronic storage device provided in the embodiments of this application;

[0029] Figure 12 The experimental process of achieving multi-value storage through multiple erases after writing in the optoelectronic storage device provided in the embodiments of this application;

[0030] Figure 13 The experimental results show that the optoelectronic storage device provided in the embodiments of this application achieves multi-value storage by writing and erasing multiple times.

[0031] Icons: 100 - Optoelectronic storage device; 110 - Substrate; 120 - Source / drain electrode; 121 - Source; 122 - Drain; 130 - Channel layer; 140 - Insulating dielectric layer; 150 - Floating gate layer; 160 - Photosensitive dielectric layer; 170 - Gate electrode. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0033] It should be noted that the terms "and / or" in this application, such as "feature 1 and / or feature 2", all refer to the three cases of "feature 1" alone, "feature 2" alone, and "feature 1" plus "feature 2".

[0034] In addition, in the description of this application, unless otherwise stated, "one or more" means two or more; the range of "numerical value a to numerical value b" includes the two endpoints "a" and "b"; and "unit of measurement" in "numerical value a to numerical value b + unit of measurement" represents the "unit of measurement" of both "numerical value a" and "numerical value b".

[0035] The following provides a detailed description of the optoelectronic storage device 100, its fabrication method, and its data storage method according to embodiments of this application.

[0036] The features and performance of this application will be further described in detail below with reference to the embodiments.

[0037] Reference Figure 1 In a first aspect, embodiments of this application provide an optoelectronic storage device 100, comprising: a substrate 110, source / drain electrodes 120, a channel layer 130, an insulating dielectric layer 140, a floating gate layer 150, a photosensitive dielectric layer 160, and a gate electrode 170, wherein the insulating dielectric layer 140, the floating gate layer 150, the photosensitive dielectric layer 160, and the gate electrode 170 are sequentially disposed. Potential barriers are formed between the floating gate layer 150 and the insulating dielectric layer 140, and between the floating gate layer 150 and the photosensitive dielectric layer 160. The photosensitive dielectric layer 160 exhibits insulating properties in the dark state and semiconductor properties under bandgap-matched light irradiation.

[0038] It is understood that the source / drain electrode 120 includes a source electrode 121 and a drain electrode 122. Unless otherwise specified, the positions of the substrate 110, source / drain electrode 120, channel layer 130, insulating dielectric layer 140, floating gate layer 150, photosensitive dielectric layer 160, and gate electrode 170 can be set as needed, as long as normal operation can be achieved.

[0039] It should be noted that in the description of the photosensitive dielectric layer 160 as having semiconductor properties under bandgap-matched light irradiation, bandgap-matched light irradiation means that the energy of the photons is equal to or greater than the bandgap width of the semiconductor layer, that is, the photosensitive dielectric layer 160 can generate photogenerated carriers under this bandgap-matched light irradiation.

[0040] Potential barriers are formed between the floating gate layer 150 and the insulating dielectric layer 140, and between the floating gate layer 150 and the photosensitive dielectric layer 160. This means that there are certain band steps between the floating gate layer 150 and the insulating dielectric layer 140, and between the floating gate layer 150 and the photosensitive dielectric layer 160, so that electrons written into the floating gate layer 150 from the photosensitive dielectric layer 160 side can be stably stored in the floating gate layer 150.

[0041] In the optoelectronic storage device 100 of this application, a photosensitive dielectric layer 160 is disposed between the floating gate layer 150 and the gate electrode 170 to enable gate injection for data storage. When using this optoelectronic storage device 100 for data storage, such as... Figure 2 As shown, by utilizing the insulating properties of the photosensitive dielectric layer 160 in the dark state and its semiconductor properties under certain light irradiation, electrons can be written into the floating gate layer 150 by applying a gate negative voltage pulse and a light pulse; as Figure 3 As shown, electrons within the floating gate layer 150 can be erased by applying only a light pulse. Potential barriers are formed between the floating gate layer 150 and the insulating dielectric layer 140, as well as between the floating gate layer 150 and the photosensitive dielectric layer 160, enabling electrons to be stably stored in the floating gate layer 150 after writing.

[0042] The optoelectronic storage device 100 provided in this application, based on the photosensitive dielectric layer 160, has at least the following advantages:

[0043] 1. When writing electrons, the presence of the photosensitive dielectric layer 160 allows for the simultaneous use of voltage pulses and light pulses, resulting in lower operating voltage requirements.

[0044] 2. By utilizing the combination of voltage pulses and light pulses, multiple values ​​can be stored by changing the voltage pulses and light pulses.

[0045] 3. Since data storage mainly relies on the characteristics of the photosensitive dielectric layer 160 under different states, there are no special requirements for the design of the channel layer 130. This makes the application of the optoelectronic storage device 100 not limited by the design of the channel layer 130, and it has good portability and can adapt well to different application scenarios.

[0046] 4. Because of the gate injection method, damage to the channel layer 130 can be avoided by frequent write processes.

[0047] It should be noted that the material of the photosensitive dielectric layer 160 is not limited in this application, as long as it has insulating properties in the dark and semiconductor properties under certain light irradiation.

[0048] In order to better meet the different state characteristics of the photosensitive dielectric layer 160 under dark and light irradiation, the material of the photosensitive dielectric layer 160 may be one of inorganic metal oxides, inorganic metal nitrides, inorganic non-metallic nitrides and organic polymers.

[0049] As an example, the photosensitive dielectric layer 160 is made of one of gallium oxide, boron nitride, aluminum nitride, and zinc oxide.

[0050] In some alternative embodiments, the floating gate layer 150 is made of one of Au, Si, Pt, and Pd. Under this selection criterion, the floating gate layer 150 has good electrical properties and a suitable bandgap between the floating gate layer 150 and the photosensitive dielectric layer 160.

[0051] In some alternative embodiments, the gate electrode 170 is made of one of Au, Pt, and Pd. Under this selection criterion, the gate electrode 170 has good electrical properties and a suitable bandgap between the gate electrode 170 and the photosensitive dielectric layer 160.

[0052] It should be noted that in this application, the arrangement and materials of the substrate 110, source / drain electrode 120, channel layer 130 and insulating dielectric layer 140 are not limited and can be carried out according to conventional design.

[0053] Regarding substrate 110, as an example, substrate 110 is either a rigid substrate 110 or a flexible substrate 110.

[0054] Optionally, the rigid substrate 110 is made of one of silicon wafer, sapphire, and quartz glass, and the flexible substrate 110 is made of one of polyethylene naphthalate, polyethylene terephthalate, polyimide, polymethyl methacrylate, polydimethylsiloxane, polyvinyl chloride, polycarbonate, polystyrene, and plexiglass.

[0055] Regarding the source / drain electrode 120, as an example, the material of the source / drain electrode 120 is one of ITO, Mo, Ti, Au, Ti / Au alloy, FTO, Cr, Cu, Ag, Pd and graphene.

[0056] Regarding the channel layer 130, as an example, the material of the channel layer 130 is one of silicon semiconductor, oxide semiconductor, organic semiconductor and two-dimensional semiconductor.

[0057] Optionally, the channel layer 130 is made of one of Si, IGZO, GaN, AlGaN, GaAs, and AlGaAs.

[0058] Regarding the insulating dielectric layer 140, as an example, the material of the insulating dielectric layer 140 is one of aluminum oxide, hafnium oxide, silicon oxide, aluminum nitride, boron nitride, and insulating polymer.

[0059] In some exemplary embodiments, the source / drain electrode 120 is disposed on the channel layer 130, wherein the source / drain electrode 120 may be disposed on one side of the channel layer 130. The substrate 110, channel layer 130, insulating dielectric layer 140, floating gate layer 150, photosensitive dielectric layer 160, and gate electrode 170 are sequentially disposed. The source / drain electrode 120 is made of Mo, the channel layer 130 is made of IGZO, the insulating dielectric layer 140 is made of aluminum oxide, the floating gate layer 150 is made of Au, the photosensitive dielectric layer 160 is made of gallium oxide, and the gate electrode 170 is made of Au. The substrate 110 is made of glass, such as quartz glass.

[0060] In a second aspect, embodiments of this application provide a method for fabricating an optoelectronic storage device 100 as provided in the first aspect embodiment, comprising: forming a source / drain electrode 120, a channel layer 130, an insulating dielectric layer 140, a floating gate layer 150, a photosensitive dielectric layer 160, and a gate electrode 170 on a substrate 110.

[0061] The source / drain electrode 120, channel layer 130, insulating dielectric layer 140, floating gate layer 150, photosensitive dielectric layer 160 and gate electrode 170 can be grown and arranged according to the design of the optoelectronic memory device 100. The growth method is not limited and can be carried out according to the conventional deposition method in the art.

[0062] Thirdly, this application provides a data storage method using the optoelectronic storage device 100 provided in the first aspect embodiment, comprising: writing electrons into the floating gate layer 150 by simultaneously applying a gate negative voltage pulse and a light pulse; and erasing electrons in the floating gate layer 150 by applying a light pulse.

[0063] It should be noted that during the process of writing electrons into the floating gate layer 150, the gate negative voltage pulse and the light pulse need to be applied together; during the process of erasing electrons in the floating gate layer 150, only the light pulse is applied.

[0064] Research has found that, since the optoelectronic storage device 100 provided in this application utilizes voltage pulses and light pulses in combination, different storage values ​​can be obtained by changing the voltage pulses and light pulses, thus achieving multi-value storage effectively.

[0065] The implementation methods of multi-value storage will be illustrated by the following examples.

[0066] (i) During the process of writing electrons into the floating gate layer 150, the pulse width or amplitude of the gate negative voltage pulse is changed to change the written stored value.

[0067] The study found that in experiments where the write gate voltage was adjusted within the range of -1 to -4V, the storage results under different write gate voltages were significantly different when the write gate voltage was changed in intervals of 0.5 to 1V.

[0068] Based on this, as an example, in the (i) method, the adjustment range of the write gate voltage is -4 to -1V, and the adjustment interval of the write gate voltage is 0.5 to 1V.

[0069] (ii) During the process of writing electrons into the floating gate layer 150, the pulse width or intensity of the light pulse is changed to change the stored value being written.

[0070] The study found that in experiments where the width of the optical pulse was adjusted within the range of 50 to 1000 ms, and the gate voltage was changed at intervals of 50 to 600 ms, the storage results under different pulse widths were clearly separated.

[0071] Based on this, as an example, in the second method, the adjustment range of the width of the optical pulse is 50 to 1000 ms, and the adjustment interval of the width of the optical pulse is 50 to 600 ms.

[0072] (iii) The process of writing electrons into the floating gate layer 150 is performed multiple times at intervals. Each writing process completes the writing of a preset amount of electrons, and a written storage value is obtained.

[0073] As an example, the gate negative voltage pulse and the optical pulse are kept consistent during each write operation.

[0074] (iv) First, the process of writing electrons into the floating gate layer 150 is performed, and then the process of erasing electrons in the floating gate layer 150 is performed at intervals. Each erasure process erases a preset amount of electrons to obtain an erased storage value.

[0075] As an example, an electron writing process is first performed on the floating gate layer 150, writing a large number of electrons; in the subsequent erasure process, the light intensity of the light pulse is reduced compared to the writing process, and the light pulse remains consistent in each erasure process.

[0076] Example

[0077] A photoelectric storage device 100, the structure of which is as follows: Figure 1 As shown, the structure includes a substrate 110, a source / drain electrode 120, a channel layer 130, an insulating dielectric layer 140, a floating gate layer 150, a photosensitive dielectric layer 160, and a gate electrode 170. The source / drain electrode 120 is disposed in the channel layer 130, and the substrate 110, channel layer 130, insulating dielectric layer 140, floating gate layer 150, photosensitive dielectric layer 160, and gate electrode 170 are arranged sequentially.

[0078] The source / drain electrode 120 is made of Mo, the channel layer 130 is made of IGZO, the insulating dielectric layer 140 is made of aluminum oxide, the floating gate layer 150 is made of Au, the photosensitive dielectric layer 160 is made of gallium oxide, and the gate electrode 170 is made of Au. The substrate 110 is made of glass, such as quartz glass.

[0079] Experimental Example

[0080] The optoelectronic storage device 100 provided in the embodiment was used to conduct a data storage experiment. The experimental conditions and results are as follows.

[0081] 1. The charge writing and erasing performance of the optoelectronic storage device 100 was tested.

[0082] The experimental conditions were as follows: readout drain voltage -0.5V; readout gate voltage 0V; write gate voltage -4.5V; wavelength 254nm; pulse width 1s; power density 83μW·cm². -2 .

[0083] Experimental results are as follows Figure 4 As shown.

[0084] according to Figure 4 It can be seen that, in the initial reading state, the leakage current is greater than 2 × 10⁻⁶. -8 A, as state "1". After applying a -4.5V gate voltage pulse and a 254nm optical pulse together and then returning to the readout state, the leakage current is less than 7×10. -13 A is taken as state "0". Then, based on the read state, the same light pulse is applied, and the leakage current instantly returns to 2×10. -8 A represents state "0".

[0085] The above results demonstrate that the optoelectronic storage device 100 provided in this application has good feasibility in performing the writing process using a combination of gate voltage pulses and optical pulses, and in performing the erasure process using optical pulses. Furthermore, the read gate voltage is 0V, the read drain voltage is -0.5V, and the write voltage is only -4.5V; this write voltage represents a significant breakthrough in the research of reducing operating voltage, which is beneficial for realizing low-power storage.

[0086] 2. The transfer characteristics of the optoelectronic storage device 100 before and after writing were tested.

[0087] Experimental results are as follows Figure 5 As shown.

[0088] according to Figure 5 It can be seen that after charge writing, the threshold voltage shifts significantly in the positive direction, which corresponds to the decrease in leakage current after writing.

[0089] 3. Fatigue test on optoelectronic storage device 100.

[0090] Experimental results are as follows Figure 6 As shown.

[0091] according to Figure 6 It can be seen that during multiple cycles of writing and erasing, the storage performance of the optoelectronic storage device 100 remained stable without any degradation.

[0092] IV. The storage retention performance of the optoelectronic storage device 100 is tested.

[0093] Experimental results are as follows Figure 7 As shown.

[0094] according to Figure 7 It can be seen that after 5 hours of charge writing, the storage ratio is still higher than 4 orders of magnitude, which proves the excellent storage stability.

[0095] 5. The multi-value storage performance of the optoelectronic storage device 100 under mode (i) is tested.

[0096] Experimental results under different gate voltage pulses are as follows Figure 8 As shown.

[0097] according to Figure 8 It can be seen that in the various experimental groups with different gate voltage pulses, the larger the amplitude of the written gate voltage, the more charge is written and the lower the leakage current. The written values ​​under different gate voltage pulse conditions show obvious separation, which can effectively achieve multi-value storage through different write voltages.

[0098] VI. The multi-value storage performance of the optoelectronic storage device 100 under mode (ii) is tested.

[0099] Experimental results at different pulse widths are as follows Figure 9 As shown.

[0100] according to Figure 9 It can be seen that in the various experimental groups with different optical pulse widths, the larger the writing optical pulse width, the more charge is written and the lower the leakage current. The written values ​​under different optical pulse width conditions show obvious separation, and multi-value storage can be achieved well by using different writing voltages.

[0101] 7. The multi-value storage performance of the optoelectronic storage device 100 under mode (iii) is tested.

[0102] Write conditions are as follows Figure 10 As shown, the writing result is as follows Figure 11 As shown.

[0103] according to Figure 10 and Figure 11 It can be seen that by writing multiple times, each time writing a certain amount of charge, multi-value storage can be achieved well.

[0104] 8. The multi-value storage performance of the optoelectronic storage device 100 under mode (iv) is tested.

[0105] Write conditions are as follows Figure 12 As shown, the writing result is as follows Figure 13 As shown.

[0106] according to Figure 12 and Figure 13 It can be seen that multi-value storage can be achieved by first writing a preset amount of charge, and then erasing multiple times, each time removing a certain amount of charge. For example... Figure 13 As shown, it illustrates that 76 different states of storage are implemented.

[0107] The embodiments described above are some, but not all, of the embodiments of this application. The detailed description of the embodiments of this application is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

Claims

1. A photoelectric storage device, characterized in that, include: The system comprises a substrate, source / drain electrodes, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate electrode, wherein the insulating dielectric layer, the floating gate layer, the photosensitive dielectric layer, and the gate electrode are sequentially disposed. Potential barriers are formed between the floating gate layer and the insulating dielectric layer, and between the floating gate layer and the photosensitive dielectric layer. The photosensitive dielectric layer exhibits insulating properties in the dark state and semiconductor properties under bandgap-matched light irradiation. The source / drain electrodes are disposed on the channel layer. The substrate, the channel layer, the insulating dielectric layer, the floating gate layer, the photosensitive dielectric layer, and the gate electrode are sequentially disposed. The source / drain electrodes are made of Mo, the channel layer is made of IGZO, the insulating dielectric layer is made of aluminum oxide, the floating gate layer is made of Au, the photosensitive dielectric layer is made of gallium oxide, and the gate electrode is made of Au.

2. The optoelectronic storage device according to claim 1, characterized in that, The material of the photosensitive medium layer is one of inorganic metal oxides, inorganic metal nitrides, inorganic non-metallic nitrides, and organic polymers.

3. The optoelectronic storage device according to claim 2, characterized in that, The photosensitive dielectric layer is made of one of gallium oxide, boron nitride, aluminum nitride, and zinc oxide.

4. The optoelectronic storage device according to claim 3, characterized in that, The material of the floating gate layer is one of Au, Si, Pt and Pd.

5. The optoelectronic storage device according to claim 3, characterized in that, The gate electrode is made of one of Au, Pt, and Pd.

6. The optoelectronic storage device according to claim 1, characterized in that, At least one of the following conditions (a) to (f) must be met: (a) The substrate is a rigid substrate or a flexible substrate; (b) The rigid substrate is made of one of silicon wafers, sapphire and quartz glass, and the flexible substrate is made of one of polyethylene naphthalate, polyethylene terephthalate, polyimide, polymethyl methacrylate, polydimethylsiloxane, polyvinyl chloride, polycarbonate, polystyrene and plexiglass. (c) The source / drain electrode is made of one of ITO, Mo, Ti, Au, Ti / Au alloy, FTO, Cr, Cu, Ag, Pd and graphene; (d) The material of the channel layer is one of silicon semiconductor, oxide semiconductor, organic semiconductor and two-dimensional semiconductor; (e) The material of the channel layer is one of Si, IGZO, GaN, AlGaN, GaAs and AlGaAs; (f) The material of the insulating dielectric layer is one of aluminum oxide, hafnium oxide, silicon oxide, aluminum nitride, boron nitride and insulating polymer.

7. A method for fabricating a photoelectric storage device as described in any one of claims 1 to 6, characterized in that, include: The source / drain electrode, the channel layer, the insulating dielectric layer, the floating gate layer, the photosensitive dielectric layer, and the gate electrode are formed on the substrate.

8. A data storage method, characterized in that, The method employs the optoelectronic memory device as described in any one of claims 1 to 6, comprising: writing electrons into the floating gate layer by simultaneously applying a gate negative voltage pulse and a light pulse; and erasing electrons from the floating gate layer by applying a light pulse.

9. The data storage method according to claim 8, characterized in that, Multiple value storage can be performed using any of the following methods (i) to (iv): (i) During the process of writing electrons into the floating gate layer, the pulse width or amplitude of the gate negative voltage pulse is changed to change the written stored value. (ii) During the process of writing electrons into the floating gate layer, the pulse width or intensity of the light pulse is changed to change the stored value being written. (iii) The process of writing electrons into the floating gate layer is performed multiple times at intervals. Each writing process completes the writing of a preset amount of electrons, and a written storage value is obtained. (iv) First, the process of writing electrons into the floating gate layer is performed, and then the process of erasing electrons in the floating gate layer is performed at intervals. Each erasure process erases a preset amount of electrons to obtain an erased storage value.

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