Dual-sided in-mold temperature-compensated resonator

Abstract

The application provides a double-sided in-plane mode temperature compensation resonator, by nesting connection of first and second resonators, corresponding driving and detecting electrodes are arranged on one side of the corresponding resonator and vibrate at the adjacent gap under the action of the driving electrode, so that the two resonators are in-plane mode vibration modes, and the vibration modes of the two resonators are different, one of which is used as an output working frequency and the other is used as a temperature compensation working frequency, so that the temperature compensation resonator is a double-sided in-plane mode. Selecting two different in-plane modes as output and temperature compensation modes respectively, without configuring an out-of-plane electrode, the electrode preparation difficulty and complexity are reduced, and the preparation cost is reduced. In addition, the in-plane electrode is more easily prepared with a small gap than the out-of-plane electrode, and the process complexity required for realizing low impedance is reduced. Furthermore, high temperature compensation accuracy and low temperature drift output can be realized by adjusting the crystal direction and doping concentration of the resonator material.

Description

Technical Field

[0001] This invention belongs to the field of microelectromechanical systems (MEMS) technology, and in particular relates to a two-sided internal mode temperature-compensated resonator. Background Technology

[0002] Micro-Electro-Mechanical Systems (MEMS) is a high-tech field based on microelectronics and microfabrication technologies. MEMS technology integrates mechanical components, drive components, electronic control systems, and digital processing systems into a single miniature unit. MEMS devices offer numerous advantages, including miniaturization, intelligence, actuation capabilities, integrability, good process compatibility, and low cost. The development of MEMS technology has opened up entirely new technological fields and industries. Microsensors, microactuators, microcomponents, micromechanical optical devices, vacuum microelectronic devices, and power electronic devices fabricated using MEMS technology have broad application prospects in aerospace, automotive, biomedical, environmental monitoring, military, and the Internet of Things (IoT) fields.

[0003] MEMS dual-mode temperature-compensated oscillator (TCXO) designs typically employ two resonators. Each resonator operates as follows: a drive electrode and a detection electrode are used. A bias voltage is applied to the resonator, and an AC drive voltage is applied to the drive electrode. Opposite charges accumulate on both the drive electrode and the resonator, generating an electrostatic force. Applying a time-varying voltage signal to the drive electrode generates this time-varying electrostatic force, driving the resonator to oscillate. The detection electrode detects the capacitance change between itself and the resonator caused by the resonator's vibration to obtain the resonator's vibration signal. Existing TCXO designs often incorporate one resonator for out-of-plane mode (where the resonator's vibration direction is perpendicular to its surface) and one for in-plane mode (where the vibration direction is parallel to the resonator's surface). One resonator serves as the oscillator's output operating frequency, and the other as the oscillator's temperature compensation operating frequency. This achieves lower output frequency temperature drift (TCF) characteristics and higher temperature measurement frequency TCF characteristics.

[0004] In order to effectively drive and detect out-of-plane modes, such as torsional modes, existing TCXO designs require out-of-plane electrodes. The fabrication of out-of-plane electrodes is difficult and complex, increasing the manufacturing cost. In addition, in order to reduce the impedance of the resonator, a smaller electrode gap (gap < 1 μm) is required, but the fabrication of small out-of-plane electrode gaps is very difficult and complex, and it is difficult to make them very small. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a dual-plane internal mode temperature compensation resonator to solve the problems of the prior art where MEMS dual-plane temperature compensation oscillators using out-of-plane modes require the setting of out-of-plane electrodes, which are difficult and complex to manufacture, increasing the manufacturing cost; and in order to reduce the impedance of the resonator, smaller electrode gaps are required, but the manufacturing difficulty and complexity of small out-of-plane electrode gaps are very high, and it is difficult to make them very small.

[0006] To achieve the above and other related objectives, the present invention provides a biplane internal mode temperature compensated resonator, the biplane internal mode temperature compensated resonator comprising:

[0007] The first resonator, the second resonator, the first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are separated from each other by a gap.

[0008] The second resonator is disposed on the outer periphery of the first resonator and is connected by a nested coupling structure;

[0009] The first resonator and the second resonator vibrate at their respective adjacent gaps;

[0010] The first resonator driving electrode and the first resonator detection electrode are disposed on one side of the first resonator;

[0011] The second resonator driving electrode and the second resonator detection electrode are disposed on one side of the second resonator;

[0012] The first resonator and / or the second resonator are fixed by anchor points;

[0013] The first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are fixed by anchor points;

[0014] The first resonator and the second resonator are in-plane modes with different vibration modes, and one of them serves as the resonator at the output operating frequency, while the other serves as the resonator at the temperature compensation operating frequency.

[0015] Optionally, the first resonator, the second resonator, the first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are disposed on the substrate; the first resonator and / or the second resonator are fixed to the substrate by the anchoring point; the first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are fixed to the substrate by the anchoring point.

[0016] Furthermore, both the anchoring point and the anchor point are electrically connected connecting posts.

[0017] Optionally, the coupling structure is a beam-like structure.

[0018] Optionally, the first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are all arranged in pairs.

[0019] Optionally, the vibration mode of the first resonator includes one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode; the vibration mode of the second resonator includes one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode.

[0020] Furthermore, the vibration mode of the first resonator is the Lamb mode, and the vibration mode of the second resonator is the breathing mode; the first resonator serves as the resonator for the output operating frequency, and the second resonator serves as the resonator for the temperature compensation operating frequency.

[0021] Furthermore, the materials of the first resonator and the second resonator are boron-doped semiconductor materials.

[0022] Furthermore, the semiconductor material is silicon with a (110) crystal orientation; the boron doping concentration is 1.7e20.

[0023] Optionally, the geometry of the first resonator is one of the following: arc-shaped, sector-shaped, ring-shaped, rectangular, and square-shaped; the geometry of the second resonator is one of the following: arc-shaped, sector-shaped, ring-shaped, rectangular, and square-shaped.

[0024] Furthermore, the geometry of the first resonator is rectangular, the geometry of the second resonator is annular, the geometry of the first resonator driving electrode and the first resonator detection electrode is an isosceles trapezoid, and the geometry of the second resonator driving electrode and the second resonator detection electrode is an arc.

[0025] As described above, the biplane internal mode temperature compensation resonator of the present invention, by nesting and connecting a first resonator and a second resonator, with their corresponding driving electrodes and detection electrodes positioned opposite each other on opposite sides of the respective resonators, vibrates at their adjacent gaps under the action of the driving electrodes, thereby making both resonators vibrate in-plane modes. Simultaneously, the two resonators are configured with different in-plane modes, with one serving as the output operating frequency and the other as the temperature compensation operating frequency, thus achieving a biplane internal mode temperature compensation resonator. Selecting two different in-plane modes as the output and temperature compensation modes respectively eliminates the need for out-of-plane electrodes, reducing the difficulty and complexity of electrode fabrication and lowering manufacturing costs. Furthermore, in-plane electrodes are easier to fabricate with small gaps compared to out-of-plane electrodes, reducing the process complexity required to achieve low impedance. Moreover, high temperature measurement accuracy compensation and low temperature drift output can be achieved by adjusting the crystal orientation and doping concentration of the resonator material. Attached Figure Description

[0026] Figure 1 The diagram shown is a structural schematic of a two-sided internal mode temperature-compensated resonator, which is an example of the present invention. It mainly shows the geometry, connection relationship and positional relationship of the first resonator and the second resonator.

[0027] Figure 2 Displayed as Figure 1 The diagram shows the motion modes of the first resonator when its vibration mode is the Lamb mode.

[0028] Figure 3 Displayed as Figure 1 The second resonator in the diagram is in the breathing mode, which is a schematic diagram of the motion modes.

[0029] Figure 4 The diagram shown is a structural schematic of a biplane internal mode temperature-compensated resonator, which is an example of the present invention. It mainly shows the arrangement of the corresponding driving electrodes and detection electrodes of the resonator.

[0030] Figure 5 and Figure 6 Displayed as Figure 1 The simulation data of the motion modes of the second resonator in the double-sided internal mode temperature-compensated resonator in the breathing mode are shown. The material of the second resonator is boron-doped silicon, and the boron ion doping concentrations are 4.1e18, 6e18, 3e19, 1.4e20, and 1.7e20, respectively. Figure 5 The crystal orientation of the silicon material is selected as (100) crystal orientation. Figure 6 The crystal orientation of the silicon material is selected as (110) crystal orientation.

[0031] Figure 7 and Figure 8 Displayed as Figure 1The simulation data of the motion modes of the first resonator in the Lamb mode of the double-sided internal mode temperature-compensated resonator is shown. The material of the first resonator is boron-doped silicon, and the boron ion doping concentrations are 4.1e18, 6e18, 3e19, 1.4e20, and 1.7e20, respectively. Figure 7 The crystal orientation of the silicon material is selected as (100) crystal orientation. Figure 8 The crystal orientation of the silicon material is selected as (110) crystal orientation.

[0032] Figure 9 Displayed as Figure 2 A schematic diagram illustrating an application example of a biplane internal mode temperature-compensated resonator.

[0033] Figure 10 The diagram shown is a structural schematic of a biplane internal mode temperature-compensated resonator, which is another example of the present invention.

[0034] Figure 11 Displayed as along Figure 10 A schematic diagram of the cross-sectional structure along the AA direction.

[0035] Component designation explanation

[0036] 100 First resonator

[0037] 101 Second Resonator

[0038] 102 First resonator driving electrode

[0039] 103 First resonator detection electrode

[0040] 104 Second resonator drive electrode

[0041] 105 Second resonator detection electrode

[0042] 106 gap

[0043] 107 Coupled Structure

[0044] 108 Anchor Points

[0045] 109 Anchor Points

[0046] 110 base

[0047] 111 Release Space

[0048] 112 Insulation layer

[0049] 113 Device Layer Detailed Implementation

[0050] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0051] Furthermore, for structural elements with the same or similar characteristics, this embodiment may use the same or different reference numerals for identification. In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this embodiment, "multiple" means two or more, unless otherwise explicitly specified.

[0052] Please see Figures 1 to 11 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0053] like Figure 1 , Figure 4 , Figure 10 and Figure 11 As shown, this embodiment provides a two-sided internal mode temperature compensation resonator, which includes:

[0054] The first resonator 100, the second resonator 101, the first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 are separated from each other by a gap 106.

[0055] The second resonator 101 is disposed on the outer periphery of the first resonator 100 and is nested and connected through the coupling structure 107;

[0056] The first resonator 100 and the second resonator 101 vibrate at their respective adjacent gaps 106;

[0057] The first resonator driving electrode 102 and the first resonator detection electrode 103 are disposed on one side of the first resonator 100;

[0058] The second resonator driving electrode 104 and the second resonator detection electrode 105 are disposed on one side of the second resonator 101;

[0059] The first resonator 100 and / or the second resonator 101 are fixed by anchor point 108;

[0060] The first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 are fixed by anchor point 109;

[0061] The first resonator 100 and the second resonator 101 are in-plane modes with different vibration modes, and one of them serves as the resonator with the output operating frequency, while the other serves as the resonator with the temperature compensation operating frequency.

[0062] This embodiment of the biplane in-mode temperature-compensated resonator achieves this by nesting a first resonator and a second resonator, with their respective driving and detection electrodes positioned opposite each other on opposite sides of the resonator. Under the action of the driving electrodes, the resonators vibrate at their adjacent gaps, resulting in both resonators operating in in-plane modes. Furthermore, the two resonators are designed with different in-plane modes, using one as the output operating frequency and the other as the temperature compensation operating frequency, thus achieving a biplane in-mode temperature-compensated resonator. Selecting two different in-plane modes as the output and temperature compensation modes respectively eliminates the need for out-of-plane electrodes, reducing the difficulty and complexity of electrode fabrication and lowering manufacturing costs. Additionally, in-plane electrodes are easier to fabricate with small gaps compared to out-of-plane electrodes, reducing the process complexity required to achieve low impedance. Moreover, high temperature measurement accuracy compensation and low-temperature drift output can be achieved by adjusting the crystal orientation and doping concentration of the resonator material.

[0063] As an example, the first resonator 100 and the second resonator 101 may be made of semiconductor materials, and may include: 1. materials composed of one or more materials in Group IV of the periodic table, such as silicon, germanium, carbon, silicon-germanium or silicon carbide; 2. III-V compounds, such as gallium phosphide, aluminum gallium phosphide or other compounds; 3. metal silicides, germanides and carbides, such as nickel silicide, cobalt silicide, tungsten carbide or platinum-germanium silicide or other compounds; 4. doped variants, such as phosphorus, arsenic, antimony, boron or aluminum doped silicon, germanium, carbon or combinations thereof (such as silicon-germanium, silicon carbide or other compounds); 5. the above four materials having various crystal structures, including any one or any combination of single crystal, polycrystalline, nanocrystalline and amorphous, such as regions having single crystal and polycrystalline structures (whether doped or undoped).

[0064] As an example, the first resonator 100 and the second resonator 101 can be formed in or on an insulator using known photolithography, etching, deposition, and / or doping techniques. Figure 11As shown, the first resonator 100 and the second resonator 101 can be formed in an SOI substrate, wherein the substrate 110 in the SOI substrate serves as a fixing layer, the insulating layer 112 serves as an anchoring layer and an isolation layer, and the device layer 113 serves as a corresponding device formation layer. Specifically, the first resonator 100, the second resonator 101, the first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 are disposed on the substrate 110; the first resonator 100 and / or the second resonator 101 are fixed to the substrate 110 by the anchoring point 108; the first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 are fixed to the substrate 110 by the anchoring point 109 (here referring to the insulating layer 112). Furthermore, the anchor point 108 and the anchor point 109 can be configured as electrically connected pillars, for example, as a TSV structure. On the one hand, they serve a fixing function, and on the other hand, they can also serve as an electrical connection structure to realize the electrical lead-out of the resonator, driving electrode and detection electrode.

[0065] like Figure 4 and Figure 10 As shown, as a preferred example, the coupling structure 107 is configured as a beam structure, which can effectively reduce the coupling between the modes of the first resonator 100 and the second resonator 101, while also ensuring the effectiveness of temperature transfer between the two and reducing hysteresis.

[0066] It should be noted that the driving electrode in the resonator is used to induce the resonator to resonate, while the detection electrode is used to detect the output signal. As the resonator resonates, the gap between the resonator and the detection electrode changes, which in turn causes a change in the average capacitance between the detection electrode and the resonator. A stable frequency output signal is generated by measuring the capacitance change through the detection electrode. Therefore, each resonator has at least one driving electrode and one detection electrode, and the number of both is the same. For some differential circuits, the driving electrode and detection electrode for each resonator can be set in pairs. For example, the first resonator driving electrode 102 can be set to an even number, such as 2, 4, 6, etc., in a one-to-one correspondence. The first resonator detection electrode 103 can also be set to an even number, such as 2, 4, 6, etc. The first resonator driving electrode 102 and the first resonator detection electrode 103 can be set on one side of the first resonator 100, i.e., the outer side or the inner side. They can be set adjacent to each other on the outer side of the first resonator 100 or inside the first resonator 100. Similarly, the second resonator driving electrode 104 can be configured with an even number of electrodes, such as 2, 4, 6, etc., in a one-to-one correspondence. The second resonator detection electrode 105 can also be configured with an even number of electrodes, such as 2, 4, 6, etc. The second resonator driving electrode 104 and the second resonator detection electrode 105 can be configured on one side of the second resonator 101, i.e., the outer or inner side. They can be arranged adjacently on the inner side of the second resonator 101, adjacently on the outer side of the second resonator 101, or opposite to each other on both sides of the second resonator 101. Figure 4 As shown, there are two first resonator driving electrodes 102 and two first resonator detection electrodes 103. The first resonator driving electrodes 102 and the first resonator detection electrodes 103 are arranged opposite each other on both sides of the first resonator 100. There are two second resonator driving electrodes 104 and two second resonator detection electrodes 105. The second resonator driving electrodes 104 and the second resonator detection electrodes 105 are also arranged opposite each other on both sides of the second resonator 101. The paired arrangement of the driving and detection electrodes enables differential driving / detection of the resonator, effectively reducing the parasitic capacitance and feedthrough capacitance of the device, and improving the device's detection accuracy.

[0067] The first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 each include a corresponding matching driving circuit and a detection circuit. The aforementioned driving electrodes, detection electrodes, and their matching driving and detection circuits are selected from conventional types; for example, the shapes of the driving electrodes and the detection electrodes can be rectangular, isosceles trapezoidal (e.g.,...). Figure 10 (as shown), right trapezoid, circular arc (as shown) Figure 4 (as shown), etc., without making excessive restrictions here.

[0068] The geometry of the first resonator 100 and the second resonator 101 is not overly restricted. For example, the geometry of the first resonator 100 can be one of arc, sector, ring, rectangle and square; the geometry of the second resonator 101 can be one of arc, sector, ring, rectangle and square. The specific selection is based on actual needs and is not overly restricted here.

[0069] As an example, the in-plane vibration modes of the first resonator 100 and the second resonator 101 can adopt existing conventional vibration modes, as long as the vibration modes of the two are different. For example, the vibration mode of the first resonator 100 can be one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode; the vibration mode of the second resonator 101 can be one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode. Alternatively, the first resonator 100 can be selected as the resonator for the output operating frequency, and the second resonator 101 as the resonator for the temperature compensation operating frequency; conversely, the first resonator 100 can be used as the resonator for the temperature compensation operating frequency, and the second resonator 101 as the resonator for the output operating frequency.

[0070] Furthermore, depending on the location of the anchor point 108, the release methods of the first resonator 100 and the second resonator 101 are also different. For example... Figure 4 As shown, the anchor point 108 is disposed on the first resonator 100, so the second resonator 101 is suspended. The area of ​​the first resonator 100 other than the anchor point 108 is also suspended, providing a release space between it and the substrate. The second resonator 101 is connected to the first resonator 100 through the coupling structure 107, and finally, both are fixed by the anchor point 108 and remain suspended. Figure 10 and Figure 11As shown, the anchor point 108 is located on the outer edge of the second resonator 101, so both the first resonator 100 and the second resonator 101 are suspended, and there is a release space 111 between them and the substrate. The first resonator 100 is connected to the second resonator 101 through the coupling structure 107, and finally the two are fixed by the anchor point 108 and are in a suspended state.

[0071] The following illustration provides a specific example and demonstrates the motion mode simulation to illustrate the biplane internal mode temperature-compensated resonator of this embodiment.

[0072] like Figure 1 and Figure 4 As shown, in this specific example, the second resonator 101 is selected and disposed on the outer periphery of the first resonator 100 and nested and connected through the coupling structure 107. The geometry of the first resonator 100 is square, and the geometry of the second resonator 101 is annular, and the material is silicon. The number of the first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105 are all set to a pair. The geometry of the first resonator driving electrode 102 and the first resonator detection electrode 103 is isosceles trapezoid, and the geometry of the second resonator driving electrode 104 and the second resonator detection electrode 105 is arc-shaped. The first resonator driving electrode 102 and the first resonator detection electrode 103 are... A gap is disposed on the outer periphery of the first resonator 100, and a gap is disposed within the second resonator 101 between the second resonator driving electrode 104 and the second resonator detection electrode 105, relatively surrounding the first resonator driving electrode 102 and the first resonator detection electrode 103; an anchor point 108 is disposed on the first resonator 100, and anchor points 109 are respectively disposed on the first resonator driving electrode 102, the first resonator detection electrode 103, the second resonator driving electrode 104, and the second resonator detection electrode 105, and both anchor points 108 and 109 are TSV structures; the coupling structure 107 is a beam structure; the vibration mode of the first resonator 100 is selected as the Lamb mode, and the vibration mode of the second resonator 101 is the breathing mode, such as... Figure 2 This is a schematic diagram of the motion modes of the first resonator 100 when the vibration mode is the Lamb mode, as shown below. Figure 3 This is a schematic diagram of the motion modes of the second resonator 101 when the vibration mode is the breathing mode; in addition, the first resonator 100 is selected as the resonator with the output operating frequency in the double-sided internal modal temperature compensation resonator, and the second resonator 101 is selected as the resonator with the temperature compensation operating frequency in the double-sided internal modal temperature compensation resonator.

[0073] like Figures 5 to 8 The image shows motion mode simulation data obtained by selecting the crystal orientation of the first resonator 100 and the second resonator 101 materials and using different doping concentrations in the above specific example. Figure 5 The image shows the motion mode simulation data obtained under five different boron ion doping conditions when the second resonator 101 is selected in breathing mode, the material is silicon, and the crystal orientation is (100). The five boron ion doping concentrations are 1.7e20, 1.4e20, 3e19, 6e18, and 4.1e18. The corresponding polynomials obtained under these five concentrations are y = -0.0286x. 2 -12.306x + 325.6, y = -0.0337x 2 –11.958x+320.02, y=-0.0539x 2 –17.267x+465.56, y=-0.0385x 2 -25.802x + 669.31 and y = -0.0381x 2 -27.822x + 719.43; Figure 6 The image shows the motion mode simulation data obtained under five different boron ion doping conditions when the second resonator 101 is selected in breathing mode, the material is silicon, and the crystal orientation is (110). The five boron ion doping concentrations are related to... Figure 5 The concentrations are 1.7e20, 1.4e20, 3e19, 6e18, and 4.1e18, respectively. The corresponding polynomials obtained at these five concentrations are y = -0.0288x. 2 -12.967x + 342.3, y = -0.0337x 2 –12.628x+336.86, y=-0.0534x 2 –17.677x+475.44, y=-0.0382x 2 -27.904x + 721.76 and y = -0.0387x 2 -25.926x+672.47; Figure 7 The image shows the motion mode simulation data obtained under five different boron ion doping conditions when the first resonator 100 is selected in Lamb mode, the material is silicon, and the crystal orientation is (100). The five boron ion doping concentrations are 1.7e20, 1.4e20, 3e19, 6e18, and 4.1e18. The corresponding polynomials obtained under these five concentrations are y = -0.0307x. 2 –11.132x+297.47, y=-0.0352x 2 –10.913x+294.89、y=-0.0564x 2–15.665x+427.05, y=-0.0416x 2 -26.402x + 686.14 and y = -0.0436x 2 -25.016x+652.82; Figure 8 The image shows the motion mode simulation data obtained under five different boron ion doping conditions when the first resonator 100 is selected in Lamb mode, the material is silicon, and the crystal orientation is (110). The five boron ion doping concentrations are related to... Figure 7 The concentrations are 1.7e20, 1.4e20, 3e19, 6e18, and 4.1e18, respectively. The corresponding polynomials obtained at these five concentrations are y = -0.0283x. 2 +0.8748x–3.6967, y=-0.0384x 2 +1.1403x–3.9227, y=-0.0595x 2 –10.964x+312.73, y=-0.0424x 2 -23.254x + 608.13 and y = -0.0399x 2 -25.018x +650.55. (Comparison) Figure 7 and Figure 8 By comparing the frequency variation Δf of each TCF curve within the operating temperature range of -40℃ to 150℃, the TCF curve with crystal orientation (110) and boron ion doping concentration of 1.7e20 showed the smallest frequency variation Δf, less than 200ppm. Therefore, silicon material with crystal orientation (110) and boron ion doping concentration of 1.7e20 was selected to fabricate the first resonator 100 and the second resonator 101, and the first resonator 100 was used as the resonator for the output operating frequency in Lamb mode. Simultaneously, by... Figure 6 As can be seen from the data, when the second resonator 101 is used as a resonator for temperature compensation in breathing mode, its first-order TCF is the temperature measurement accuracy, which is approximately -12.967ppm / ℃. Figure 9 After adjusting the crystal orientation and doping concentration, the output of the first resonator 100 is selected. The schematic diagram of the temperature measurement principle of the second resonator 101 is shown. The differential detection output frequency-temperature characteristics of the second resonator 101 are used to convert the frequency change information into temperature information. Based on this temperature information, the frequency signal detected by the differential electrode of the first resonator 100 is compensated. The compensated signal is then used as the output frequency of the double-sided internal mode temperature compensation resonator.

[0074] This specific example illustrates that by adjusting the crystal orientation and doping concentration of the materials of the first resonator 100 and the second resonator 101, the excellent characteristics of a double-sided internal mode temperature compensation resonator can be achieved through high temperature measurement accuracy compensation to achieve low temperature drift output.

[0075] In this specific example, p-type doped boron ions are used. In practice, other p-type doped ions can also be used, as well as n-type doped ions, such as phosphorus ions, arsenic ions, etc. The doping concentration is not limited to the five doping concentrations mentioned above; other doping concentrations are also possible. The vibration modes of the first resonator 100 and the second resonator 101 are not limited to the Lamb mode and breathing mode in the specific example above; other vibration modes are also possible. The first resonator 100 can also be used as a resonator for temperature compensation operating frequency, and the second resonator 101 can be used as a resonator for output operating frequency.

[0076] In summary, this invention provides a biplane internal-mode temperature-compensated resonator. By nesting and connecting a first and second resonator, with their corresponding driving and detection electrodes positioned opposite each other on opposite sides of the resonator, both resonators vibrate at their adjacent gaps under the action of the driving electrodes. This results in both resonators operating in in-plane modes. Furthermore, the two resonators are designed with different in-plane modes, with one serving as the output operating frequency and the other as the temperature compensation operating frequency, thus achieving a biplane internal-mode temperature-compensated resonator. Selecting two different in-plane modes as the output and temperature compensation modes respectively eliminates the need for out-of-plane electrodes, reducing the difficulty and complexity of electrode fabrication and lowering manufacturing costs. Additionally, in-plane electrodes are easier to fabricate with small gaps compared to out-of-plane electrodes, reducing the process complexity required to achieve low impedance. Moreover, high temperature measurement accuracy compensation and low-temperature drift output can be achieved by adjusting the crystal orientation and doping concentration of the resonator material. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0077] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A biplane internal mode temperature-compensated resonator, characterized in that, The dual-surface internal mode temperature-compensated resonator includes: A first resonator, a second resonator, a first resonator driving electrode, a first resonator detection electrode, a second resonator driving electrode, and a second resonator detection electrode; wherein, the first resonator is separated from the first resonator driving electrode and the first resonator detection electrode by a gap; the second resonator is separated from the second resonator driving electrode and the second resonator detection electrode by a gap. The second resonator is disposed on the outer periphery of the first resonator and is connected by a nested coupling structure; The first resonator and the second resonator vibrate at their respective adjacent gaps; The first resonator driving electrode and the first resonator detection electrode are disposed on one side of the first resonator; The second resonator driving electrode and the second resonator detection electrode are disposed on one side of the second resonator; The first resonator and / or the second resonator are fixed by anchor points; The first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are fixed by anchor points; The first resonator and the second resonator are in-plane modes with different vibration modes, and one of them serves as the resonator at the output operating frequency, while the other serves as the resonator at the temperature compensation operating frequency.

2. The double-sided internal mode temperature-compensated resonator according to claim 1, characterized in that: The first resonator, the second resonator, the first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are disposed on the substrate; The first resonator and / or the second resonator are fixed to the substrate by the anchoring point; The first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are fixed to the substrate by the anchor point.

3. The double-sided internal mode temperature-compensated resonator according to claim 2, characterized in that: Both the anchor point and the anchor point are electrically connected connecting posts.

4. The double-sided internal mode temperature-compensated resonator according to claim 1, characterized in that: The coupling structure is a beam-like structure.

5. The double-sided internal mode temperature-compensated resonator according to claim 1, characterized in that: The first resonator driving electrode, the first resonator detection electrode, the second resonator driving electrode, and the second resonator detection electrode are all arranged in pairs.

6. The double-sided internal mode temperature-compensated resonator according to claim 1, characterized in that: The vibration modes of the first resonator include one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode; the vibration modes of the second resonator include one of the following: wine glass mode, length extension mode, width extension mode, surface shear mode, breathing mode, and Lamb mode.

7. The double-sided internal mode temperature-compensated resonator according to claim 6, characterized in that: The first resonator vibrates in Lamb mode, and the second resonator vibrates in breathing mode; the first resonator is used as the resonator for the output operating frequency, and the second resonator is used as the resonator for the temperature compensation operating frequency.

8. The double-sided internal mode temperature-compensated resonator according to claim 7, characterized in that: The first resonator and the second resonator are made of boron-doped semiconductor materials.

9. The double-sided internal mode temperature-compensated resonator according to claim 8, characterized in that: The semiconductor material is silicon with a (110) crystal orientation.

10. The double-sided internal mode temperature-compensated resonator according to claim 1, characterized in that: The first resonator has a geometric shape that is one of arc, sector, ring, rectangle, and square; the second resonator has a geometric shape that is one of arc, sector, ring, rectangle, and square.

11. The double-sided internal mode temperature-compensated resonator according to claim 10, characterized in that: The first resonator has a rectangular geometry, the second resonator has a circular geometry, the first resonator driving electrode and the first resonator detection electrode have isosceles trapezoidal geometry, and the second resonator driving electrode and the second resonator detection electrode have arc-shaped geometry.

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